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D."},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Pawlis, A.","first_name":"A.","last_name":"Pawlis"}],"year":"2015","title":"Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering","status":"public","intvolume":"        91","publication_status":"published","date_updated":"2022-01-06T07:03:29Z","_id":"7222","publisher":"American Physical Society (APS)","language":[{"iso":"eng"}],"volume":91,"user_id":"42514","doi":"10.1103/physrevb.91.035409"},{"user_id":"15572","doi":"10.1109/EuCNC.2015.7194112","page":"429--433","_id":"739","date_updated":"2022-01-06T07:03:36Z","year":"2015","title":"On Network Application representation and controller independence in {SDN","status":"public","author":[{"first_name":"Pedro","last_name":"A. Aranda-Gutierrez","full_name":"A. Aranda-Gutierrez, Pedro"},{"last_name":"Karl","first_name":"Holger","full_name":"Karl, Holger","id":"126"},{"full_name":"Rojas, Elisa","first_name":"Elisa","last_name":"Rojas"},{"last_name":"Leckey","first_name":"Alec","full_name":"Leckey, Alec"}],"type":"conference","department":[{"_id":"75"}],"date_created":"2017-11-27T10:22:25Z","project":[{"_id":"21","grant_number":"619543","name":"An integrated development environment for portable network applications","call_identifier":"FP7-ICT-2013-11"}],"publication":"2015 European Conference on Networks and Communications, EuCNC 2015, Paris, France, June 29 - July 2, 2015","citation":{"mla":"A. Aranda-Gutierrez, Pedro, et al. “On Network Application Representation and Controller Independence in {SDN.” <i>2015 European Conference on Networks and Communications, EuCNC 2015, Paris, France, June 29 - July 2, 2015</i>, 2015, pp. 429--433, doi:<a href=\"https://doi.org/10.1109/EuCNC.2015.7194112\">10.1109/EuCNC.2015.7194112</a>.","ama":"A. Aranda-Gutierrez P, Karl H, Rojas E, Leckey A. On Network Application representation and controller independence in {SDN. In: <i>2015 European Conference on Networks and Communications, EuCNC 2015, Paris, France, June 29 - July 2, 2015</i>. ; 2015:429--433. doi:<a href=\"https://doi.org/10.1109/EuCNC.2015.7194112\">10.1109/EuCNC.2015.7194112</a>","bibtex":"@inproceedings{A. Aranda-Gutierrez_Karl_Rojas_Leckey_2015, title={On Network Application representation and controller independence in {SDN}, DOI={<a href=\"https://doi.org/10.1109/EuCNC.2015.7194112\">10.1109/EuCNC.2015.7194112</a>}, booktitle={2015 European Conference on Networks and Communications, EuCNC 2015, Paris, France, June 29 - July 2, 2015}, author={A. Aranda-Gutierrez, Pedro and Karl, Holger and Rojas, Elisa and Leckey, Alec}, year={2015}, pages={429--433} }","apa":"A. Aranda-Gutierrez, P., Karl, H., Rojas, E., &#38; Leckey, A. (2015). On Network Application representation and controller independence in {SDN. In <i>2015 European Conference on Networks and Communications, EuCNC 2015, Paris, France, June 29 - July 2, 2015</i> (pp. 429--433). <a href=\"https://doi.org/10.1109/EuCNC.2015.7194112\">https://doi.org/10.1109/EuCNC.2015.7194112</a>","ieee":"P. A. Aranda-Gutierrez, H. Karl, E. Rojas, and A. Leckey, “On Network Application representation and controller independence in {SDN,” in <i>2015 European Conference on Networks and Communications, EuCNC 2015, Paris, France, June 29 - July 2, 2015</i>, 2015, pp. 429--433.","chicago":"A. Aranda-Gutierrez, Pedro, Holger Karl, Elisa Rojas, and Alec Leckey. “On Network Application Representation and Controller Independence in {SDN.” In <i>2015 European Conference on Networks and Communications, EuCNC 2015, Paris, France, June 29 - July 2, 2015</i>, 429--433, 2015. <a href=\"https://doi.org/10.1109/EuCNC.2015.7194112\">https://doi.org/10.1109/EuCNC.2015.7194112</a>.","short":"P. A. Aranda-Gutierrez, H. Karl, E. Rojas, A. Leckey, in: 2015 European Conference on Networks and Communications, EuCNC 2015, Paris, France, June 29 - July 2, 2015, 2015, pp. 429--433."},"ec_funded":"1"},{"citation":{"chicago":"Bürger, M., Jörg Lindner, Dirk Reuter, and D. J. As. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” <i>Physica Status Solidi (C)</i> 12, no. 4–5 (2015): 452–55. <a href=\"https://doi.org/10.1002/pssc.201400132\">https://doi.org/10.1002/pssc.201400132</a>.","short":"M. Bürger, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (C) 12 (2015) 452–455.","ama":"Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. <i>physica status solidi (c)</i>. 2015;12(4-5):452-455. doi:<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>","bibtex":"@article{Bürger_Lindner_Reuter_As_2015, title={Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process}, volume={12}, DOI={<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>}, number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Bürger, M. and Lindner, Jörg and Reuter, Dirk and As, D. J.}, year={2015}, pages={452–455} }","mla":"Bürger, M., et al. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” <i>Physica Status Solidi (C)</i>, vol. 12, no. 4–5, Wiley, 2015, pp. 452–55, doi:<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>.","apa":"Bürger, M., Lindner, J., Reuter, D., &#38; As, D. J. (2015). Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. <i>Physica Status Solidi (C)</i>, <i>12</i>(4–5), 452–455. <a href=\"https://doi.org/10.1002/pssc.201400132\">https://doi.org/10.1002/pssc.201400132</a>","ieee":"M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” <i>physica status solidi (c)</i>, vol. 12, no. 4–5, pp. 452–455, 2015."},"file_date_updated":"2018-08-21T13:10:09Z","status":"public","has_accepted_license":"1","_id":"4024","publisher":"Wiley","page":"452-455","volume":12,"ddc":["530"],"user_id":"42514","publication":"physica status solidi (c)","issue":"4-5","abstract":[{"text":"We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic strained cubic AlN layers on \r\n3C-SiC (001) substrates grown by means of molecular beam epitaxy. Surface morphologies of various QD sizes \r\nand densities were obtained from uncapped samples by atomic force microscopy. These results were correlated \r\nwith similar but capped samples by photoluminescence experiments. The QD density varies by one order of \r\nmagnitude from ~1x10^10 cm^-2 to ~1x10^11 cm^-2 as a function of the GaN coverage on the surface. The initial layer \r\nthickness for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers by a comparison \r\nbetween the experimental results and an analytical model. Our results reveal the strain-driven Stranski-Krastanov \r\ngrowth mode as the main formation process of the cubic GaN QDs.  ","lang":"eng"}],"date_created":"2018-08-21T13:07:35Z","file":[{"date_updated":"2018-08-21T13:10:09Z","relation":"main_file","access_level":"closed","file_size":650052,"file_name":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process.pdf","content_type":"application/pdf","success":1,"file_id":"4025","creator":"hclaudia","date_created":"2018-08-21T13:10:09Z"}],"department":[{"_id":"286"},{"_id":"292"},{"_id":"15"}],"type":"journal_article","author":[{"last_name":"Bürger","first_name":"M.","full_name":"Bürger, M."},{"full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg","id":"20797"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"As, D. J.","last_name":"As","first_name":"D. J."}],"publication_identifier":{"issn":["1862-6351"]},"year":"2015","title":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process","intvolume":"        12","article_type":"original","date_updated":"2022-01-06T07:00:08Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1002/pssc.201400132"},{"has_accepted_license":"1","status":"public","volume":12,"user_id":"55706","ddc":["530"],"publisher":"Wiley","_id":"4027","page":"469-472","citation":{"chicago":"Kemper, R. M., P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram, J. Christen, Jörg Lindner, and D. J. As. “STEM-CL Investigations on the Influence of Stacking Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN Multi-Quantum Wells.” <i>Physica Status Solidi (C)</i> 12, no. 4–5 (2015): 469–72. <a href=\"https://doi.org/10.1002/pssc.201400154\">https://doi.org/10.1002/pssc.201400154</a>.","short":"R.M. Kemper, P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram, J. Christen, J. Lindner, D.J. As, Physica Status Solidi (C) 12 (2015) 469–472.","ieee":"R. M. Kemper <i>et al.</i>, “STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells,” <i>physica status solidi (c)</i>, vol. 12, no. 4–5, pp. 469–472, 2015.","apa":"Kemper, R. M., Veit, P., Mietze, C., Dempewolf, A., Wecker, T., Bertram, F., … As, D. J. (2015). STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells. <i>Physica Status Solidi (C)</i>, <i>12</i>(4–5), 469–472. <a href=\"https://doi.org/10.1002/pssc.201400154\">https://doi.org/10.1002/pssc.201400154</a>","bibtex":"@article{Kemper_Veit_Mietze_Dempewolf_Wecker_Bertram_Christen_Lindner_As_2015, title={STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells}, volume={12}, DOI={<a href=\"https://doi.org/10.1002/pssc.201400154\">10.1002/pssc.201400154</a>}, number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Veit, P. and Mietze, C. and Dempewolf, A. and Wecker, T. and Bertram, F. and Christen, J. and Lindner, Jörg and As, D. J.}, year={2015}, pages={469–472} }","ama":"Kemper RM, Veit P, Mietze C, et al. STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells. <i>physica status solidi (c)</i>. 2015;12(4-5):469-472. doi:<a href=\"https://doi.org/10.1002/pssc.201400154\">10.1002/pssc.201400154</a>","mla":"Kemper, R. M., et al. “STEM-CL Investigations on the Influence of Stacking Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN Multi-Quantum Wells.” <i>Physica Status Solidi (C)</i>, vol. 12, no. 4–5, Wiley, 2015, pp. 469–72, doi:<a href=\"https://doi.org/10.1002/pssc.201400154\">10.1002/pssc.201400154</a>."},"file_date_updated":"2018-08-21T13:18:38Z","article_type":"original","intvolume":"        12","publication_status":"published","date_updated":"2022-01-06T07:00:08Z","publication_identifier":{"issn":["1862-6351"]},"author":[{"first_name":"R. M.","last_name":"Kemper","full_name":"Kemper, R. M."},{"full_name":"Veit, P.","last_name":"Veit","first_name":"P."},{"full_name":"Mietze, C.","last_name":"Mietze","first_name":"C."},{"last_name":"Dempewolf","first_name":"A.","full_name":"Dempewolf, A."},{"full_name":"Wecker, T.","last_name":"Wecker","first_name":"T."},{"full_name":"Bertram, F.","first_name":"F.","last_name":"Bertram"},{"full_name":"Christen, J.","first_name":"J.","last_name":"Christen"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"},{"last_name":"As","first_name":"D. J.","full_name":"As, D. J."}],"year":"2015","title":"STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells","doi":"10.1002/pssc.201400154","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"We report the influence of {111} stacking faults on the cathodoluminescence (CL) emission characteristics of\r\ncubic GaN (c-GaN) films and cubic GaN/AlN multiquantum wells. Transmission electron microscopy\r\n(TEM) measurements indicate that stacking faults (SFs) on the {111} planes are the predominant crystallographic\r\ndefects in epitaxial films, which were grown on 3CSiC/ Si (001) substrates by plasma-assisted molecular\r\nbeam epitaxy. The correlation of the SFs and the luminescence output is evidenced with a CL setup\r\nintegrated in a scanning TEM (STEM). By comparing the STEM images and the simultaneously measured CL\r\nsignals it is demonstrated that SFs in these films lead to a reduced CL emission intensity. Furthermore, the CL\r\nemission intensity is shown to increase with increasing film thickness and decreasing SF density. This\r\ncorrelation can be connected to the reduction of the full width at half maximum of X-ray diffraction rocking\r\ncurves with increasing film thickness of c-GaN films."}],"publication":"physica status solidi (c)","issue":"4-5","department":[{"_id":"286"},{"_id":"15"}],"type":"journal_article","date_created":"2018-08-21T13:17:46Z","file":[{"date_created":"2018-08-21T13:18:38Z","creator":"hclaudia","file_id":"4028","success":1,"content_type":"application/pdf","file_name":"STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN-AlN multi-quantum wells.pdf","file_size":447603,"access_level":"closed","relation":"main_file","date_updated":"2018-08-21T13:18:38Z"}]}]