[{"department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-02-21T14:39:07Z","issue":"10","publication":"Physica E: Low-dimensional Systems and Nanostructures","doi":"10.1016/j.physe.2010.02.010","language":[{"iso":"eng"}],"intvolume":"        42","publication_status":"published","date_updated":"2022-01-06T07:03:48Z","author":[{"first_name":"Bastian","last_name":"Marquardt","full_name":"Marquardt, Bastian"},{"last_name":"Geller","first_name":"Martin","full_name":"Geller, Martin"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"}],"publication_identifier":{"issn":["1386-9477"]},"title":"A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs","year":"2010","citation":{"ieee":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2598–2601, 2010.","mla":"Marquardt, Bastian, et al. “A Two-Dimensional Electron Gas as a Sensitive Detector to Observe the Charge Carrier Dynamics of Self-Assembled QDs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2598–601, doi:<a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">10.1016/j.physe.2010.02.010</a>.","apa":"Marquardt, B., Geller, M., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2010). A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2598–2601. <a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">https://doi.org/10.1016/j.physe.2010.02.010</a>","bibtex":"@article{Marquardt_Geller_Lorke_Reuter_Wieck_2010, title={A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">10.1016/j.physe.2010.02.010</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Marquardt, Bastian and Geller, Martin and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2010}, pages={2598–2601} }","chicago":"Marquardt, Bastian, Martin Geller, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “A Two-Dimensional Electron Gas as a Sensitive Detector to Observe the Charge Carrier Dynamics of Self-Assembled QDs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2598–2601. <a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">https://doi.org/10.1016/j.physe.2010.02.010</a>.","short":"B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2598–2601.","ama":"Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2598-2601. doi:<a href=\"https://doi.org/10.1016/j.physe.2010.02.010\">10.1016/j.physe.2010.02.010</a>"},"volume":42,"user_id":"42514","_id":"7987","publisher":"Elsevier BV","page":"2598-2601","status":"public"},{"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-21T14:40:35Z","issue":"16","publication":"Physical Review B","citation":{"mla":"Kreisbeck, Christoph, et al. “Phase Shifts and Phaseπjumps in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” <i>Physical Review B</i>, vol. 82, no. 16, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>.","ama":"Kreisbeck C, Kramer T, Buchholz SS, et al. Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers. <i>Physical Review B</i>. 2010;82(16). doi:<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>","bibtex":"@article{Kreisbeck_Kramer_Buchholz_Fischer_Kunze_Reuter_Wieck_2010, title={Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>}, number={16}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kreisbeck, Christoph and Kramer, Tobias and Buchholz, Sven S. and Fischer, Saskia F. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D.}, year={2010} }","apa":"Kreisbeck, C., Kramer, T., Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2010). Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers. <i>Physical Review B</i>, <i>82</i>(16). <a href=\"https://doi.org/10.1103/physrevb.82.165329\">https://doi.org/10.1103/physrevb.82.165329</a>","ieee":"C. Kreisbeck <i>et al.</i>, “Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers,” <i>Physical Review B</i>, vol. 82, no. 16, 2010.","short":"C. Kreisbeck, T. Kramer, S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Physical Review B 82 (2010).","chicago":"Kreisbeck, Christoph, Tobias Kramer, Sven S. Buchholz, Saskia F. Fischer, Ulrich Kunze, Dirk Reuter, and Andreas D. Wieck. “Phase Shifts and Phaseπjumps in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” <i>Physical Review B</i> 82, no. 16 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.165329\">https://doi.org/10.1103/physrevb.82.165329</a>."},"user_id":"42514","doi":"10.1103/physrevb.82.165329","volume":82,"language":[{"iso":"eng"}],"_id":"7989","publisher":"American Physical Society (APS)","publication_status":"published","date_updated":"2022-01-06T07:03:48Z","intvolume":"        82","title":"Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers","status":"public","year":"2010","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"last_name":"Kreisbeck","first_name":"Christoph","full_name":"Kreisbeck, Christoph"},{"first_name":"Tobias","last_name":"Kramer","full_name":"Kramer, Tobias"},{"full_name":"Buchholz, Sven S.","last_name":"Buchholz","first_name":"Sven S."},{"last_name":"Fischer","first_name":"Saskia F.","full_name":"Fischer, Saskia F."},{"full_name":"Kunze, Ulrich","last_name":"Kunze","first_name":"Ulrich"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."}]},{"issue":"14","publication":"Applied Physics Letters","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-21T14:41:19Z","publication_status":"published","date_updated":"2022-01-06T07:03:48Z","intvolume":"        97","year":"2010","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","author":[{"full_name":"Mehta, M.","last_name":"Mehta","first_name":"M."},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"full_name":"Michaelis de Vasconcellos, S.","first_name":"S.","last_name":"Michaelis de Vasconcellos"},{"first_name":"A.","last_name":"Zrenner","full_name":"Zrenner, A."},{"full_name":"Meier, C.","first_name":"C.","last_name":"Meier"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.3488812","article_number":"143101","language":[{"iso":"eng"}],"citation":{"ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010."},"status":"public","user_id":"42514","volume":97,"_id":"7990","publisher":"AIP Publishing"},{"department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-02-21T14:42:01Z","citation":{"chicago":"Reuter, Dirk, R Roescu, U Zeitler, J C Maan, and A D Wieck. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.” <i>Journal of Physics: Conference Series</i> 245 (2010). <a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">https://doi.org/10.1088/1742-6596/245/1/012043</a>.","short":"D. Reuter, R. Roescu, U. Zeitler, J.C. Maan, A.D. Wieck, Journal of Physics: Conference Series 245 (2010).","ieee":"D. Reuter, R. Roescu, U. Zeitler, J. C. Maan, and A. D. Wieck, “Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields,” <i>Journal of Physics: Conference Series</i>, vol. 245, 2010.","apa":"Reuter, D., Roescu, R., Zeitler, U., Maan, J. C., &#38; Wieck, A. D. (2010). Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields. <i>Journal of Physics: Conference Series</i>, <i>245</i>. <a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">https://doi.org/10.1088/1742-6596/245/1/012043</a>","bibtex":"@article{Reuter_Roescu_Zeitler_Maan_Wieck_2010, title={Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields}, volume={245}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>}, number={012043}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and Wieck, A D}, year={2010} }","ama":"Reuter D, Roescu R, Zeitler U, Maan JC, Wieck AD. Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields. <i>Journal of Physics: Conference Series</i>. 2010;245. doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>","mla":"Reuter, Dirk, et al. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.” <i>Journal of Physics: Conference Series</i>, vol. 245, 012043, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/245/1/012043\">10.1088/1742-6596/245/1/012043</a>."},"publication":"Journal of Physics: Conference Series","volume":245,"doi":"10.1088/1742-6596/245/1/012043","user_id":"42514","language":[{"iso":"eng"}],"_id":"7991","publisher":"IOP Publishing","article_number":"012043","intvolume":"       245","date_updated":"2022-01-06T07:03:48Z","publication_status":"published","publication_identifier":{"issn":["1742-6596"]},"author":[{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Roescu, R","first_name":"R","last_name":"Roescu"},{"first_name":"U","last_name":"Zeitler","full_name":"Zeitler, U"},{"full_name":"Maan, J C","last_name":"Maan","first_name":"J C"},{"full_name":"Wieck, A D","first_name":"A D","last_name":"Wieck"}],"status":"public","year":"2010","title":"Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields"},{"citation":{"ieee":"P. J. Rizo <i>et al.</i>, “Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system,” <i>New Journal of Physics</i>, vol. 12, no. 11, 2010.","apa":"Rizo, P. J., Pugzlys, A., Slachter, A., Denega, S. Z., Reuter, D., Wieck, A. D., … van der Wal, C. H. (2010). Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. <i>New Journal of Physics</i>, <i>12</i>(11). <a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">https://doi.org/10.1088/1367-2630/12/11/113040</a>","short":"P.J. Rizo, A. Pugzlys, A. Slachter, S.Z. Denega, D. Reuter, A.D. Wieck, P.H.M. van Loosdrecht, C.H. van der Wal, New Journal of Physics 12 (2010).","chicago":"Rizo, P J, A Pugzlys, A Slachter, S Z Denega, Dirk Reuter, A D Wieck, P H M van Loosdrecht, and C H van der Wal. “Optical Probing of Spin Dynamics of Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” <i>New Journal of Physics</i> 12, no. 11 (2010). <a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">https://doi.org/10.1088/1367-2630/12/11/113040</a>.","mla":"Rizo, P. J., et al. “Optical Probing of Spin Dynamics of Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” <i>New Journal of Physics</i>, vol. 12, no. 11, 113040, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>.","bibtex":"@article{Rizo_Pugzlys_Slachter_Denega_Reuter_Wieck_van Loosdrecht_van der Wal_2010, title={Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system}, volume={12}, DOI={<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>}, number={11113040}, journal={New Journal of Physics}, publisher={IOP Publishing}, author={Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}, year={2010} }","ama":"Rizo PJ, Pugzlys A, Slachter A, et al. Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. <i>New Journal of Physics</i>. 2010;12(11). doi:<a href=\"https://doi.org/10.1088/1367-2630/12/11/113040\">10.1088/1367-2630/12/11/113040</a>"},"user_id":"42514","volume":12,"_id":"7992","publisher":"IOP Publishing","status":"public","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-21T14:42:45Z","publication":"New Journal of Physics","issue":"11","doi":"10.1088/1367-2630/12/11/113040","article_number":"113040","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:48Z","publication_status":"published","intvolume":"        12","year":"2010","title":"Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system","publication_identifier":{"issn":["1367-2630"]},"author":[{"full_name":"Rizo, P J","first_name":"P J","last_name":"Rizo"},{"last_name":"Pugzlys","first_name":"A","full_name":"Pugzlys, A"},{"last_name":"Slachter","first_name":"A","full_name":"Slachter, A"},{"first_name":"S Z","last_name":"Denega","full_name":"Denega, S Z"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"last_name":"Wieck","first_name":"A D","full_name":"Wieck, A D"},{"full_name":"van Loosdrecht, P H M","last_name":"van Loosdrecht","first_name":"P H M"},{"last_name":"van der Wal","first_name":"C H","full_name":"van der Wal, C H"}]},{"department":[{"_id":"75"}],"type":"conference","date_created":"2017-11-27T10:22:26Z","citation":{"ieee":"M. Andree, A. Gebel, and H. Karl, “Concept and Prototype for a Real-Time Enabled Publish/Subscribe System,” in <i>10th IEEE International Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010</i>, 2010, pp. 737--742.","mla":"Andree, Matthias, et al. “Concept and Prototype for a Real-Time Enabled Publish/Subscribe System.” <i>10th IEEE International Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010</i>, 2010, pp. 737--742, doi:<a href=\"https://doi.org/10.1109/CIT.2010.142\">10.1109/CIT.2010.142</a>.","apa":"Andree, M., Gebel, A., &#38; Karl, H. (2010). Concept and Prototype for a Real-Time Enabled Publish/Subscribe System. In <i>10th IEEE International Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010</i> (pp. 737--742). <a href=\"https://doi.org/10.1109/CIT.2010.142\">https://doi.org/10.1109/CIT.2010.142</a>","bibtex":"@inproceedings{Andree_Gebel_Karl_2010, title={Concept and Prototype for a Real-Time Enabled Publish/Subscribe System}, DOI={<a href=\"https://doi.org/10.1109/CIT.2010.142\">10.1109/CIT.2010.142</a>}, booktitle={10th IEEE International Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010}, author={Andree, Matthias and Gebel, Alexander and Karl, Holger}, year={2010}, pages={737--742} }","chicago":"Andree, Matthias, Alexander Gebel, and Holger Karl. “Concept and Prototype for a Real-Time Enabled Publish/Subscribe System.” In <i>10th IEEE International Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010</i>, 737--742, 2010. <a href=\"https://doi.org/10.1109/CIT.2010.142\">https://doi.org/10.1109/CIT.2010.142</a>.","ama":"Andree M, Gebel A, Karl H. Concept and Prototype for a Real-Time Enabled Publish/Subscribe System. In: <i>10th IEEE International Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010</i>. ; 2010:737--742. doi:<a href=\"https://doi.org/10.1109/CIT.2010.142\">10.1109/CIT.2010.142</a>","short":"M. Andree, A. Gebel, H. Karl, in: 10th IEEE International Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010, 2010, pp. 737--742."},"publication":"10th IEEE International Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010","user_id":"15572","doi":"10.1109/CIT.2010.142","_id":"808","page":"737--742","date_updated":"2022-01-06T07:03:50Z","author":[{"full_name":"Andree, Matthias","first_name":"Matthias","last_name":"Andree"},{"first_name":"Alexander","last_name":"Gebel","full_name":"Gebel, Alexander"},{"full_name":"Karl, Holger","first_name":"Holger","last_name":"Karl","id":"126"}],"title":"Concept and Prototype for a Real-Time Enabled Publish/Subscribe System","status":"public","year":"2010"},{"_id":"810","page":"101--110","doi":"10.1145/1860093.1860108","user_id":"15572","author":[{"full_name":"S. Lichte, Hermann","first_name":"Hermann","last_name":"S. Lichte"},{"full_name":"Frey, Hannes","first_name":"Hannes","last_name":"Frey"},{"id":"126","full_name":"Karl, Holger","last_name":"Karl","first_name":"Holger"}],"title":"Fading-resistant low-latency broadcasts in wireless multihop networks: the probabilistic cooperation diversity approach","status":"public","year":"2010","date_updated":"2022-01-06T07:03:50Z","date_created":"2017-11-27T10:22:26Z","department":[{"_id":"75"}],"type":"conference","citation":{"mla":"S. Lichte, Hermann, et al. “Fading-Resistant Low-Latency Broadcasts in Wireless Multihop Networks: The Probabilistic Cooperation Diversity Approach.” <i>Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010</i>, 2010, pp. 101--110, doi:<a href=\"https://doi.org/10.1145/1860093.1860108\">10.1145/1860093.1860108</a>.","ama":"S. Lichte H, Frey H, Karl H. Fading-resistant low-latency broadcasts in wireless multihop networks: the probabilistic cooperation diversity approach. In: <i>Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010</i>. ; 2010:101--110. doi:<a href=\"https://doi.org/10.1145/1860093.1860108\">10.1145/1860093.1860108</a>","bibtex":"@inproceedings{S. Lichte_Frey_Karl_2010, title={Fading-resistant low-latency broadcasts in wireless multihop networks: the probabilistic cooperation diversity approach}, DOI={<a href=\"https://doi.org/10.1145/1860093.1860108\">10.1145/1860093.1860108</a>}, booktitle={Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010}, author={S. Lichte, Hermann and Frey, Hannes and Karl, Holger}, year={2010}, pages={101--110} }","apa":"S. Lichte, H., Frey, H., &#38; Karl, H. (2010). Fading-resistant low-latency broadcasts in wireless multihop networks: the probabilistic cooperation diversity approach. In <i>Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010</i> (pp. 101--110). <a href=\"https://doi.org/10.1145/1860093.1860108\">https://doi.org/10.1145/1860093.1860108</a>","ieee":"H. S. Lichte, H. Frey, and H. Karl, “Fading-resistant low-latency broadcasts in wireless multihop networks: the probabilistic cooperation diversity approach,” in <i>Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010</i>, 2010, pp. 101--110.","short":"H. S. Lichte, H. Frey, H. Karl, in: Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010, 2010, pp. 101--110.","chicago":"S. Lichte, Hermann, Hannes Frey, and Holger Karl. “Fading-Resistant Low-Latency Broadcasts in Wireless Multihop Networks: The Probabilistic Cooperation Diversity Approach.” In <i>Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010</i>, 101--110, 2010. <a href=\"https://doi.org/10.1145/1860093.1860108\">https://doi.org/10.1145/1860093.1860108</a>."},"publication":"Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010"},{"title":"FIT: Future Internet Toolbox","status":"public","year":"2010","author":[{"full_name":"Biermann, Thorsten","last_name":"Biermann","first_name":"Thorsten"},{"first_name":"Christian","last_name":"Dannewitz","full_name":"Dannewitz, Christian"},{"id":"126","last_name":"Karl","first_name":"Holger","full_name":"Karl, Holger"}],"date_updated":"2022-01-06T07:03:50Z","page":"442--453","_id":"811","user_id":"15572","doi":"10.1007/978-3-642-17851-1_34","publication":"Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers","citation":{"short":"T. Biermann, C. Dannewitz, H. Karl, in: Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers, 2010, pp. 442--453.","chicago":"Biermann, Thorsten, Christian Dannewitz, and Holger Karl. “FIT: Future Internet Toolbox.” In <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i>, 442--453, 2010. <a href=\"https://doi.org/10.1007/978-3-642-17851-1_34\">https://doi.org/10.1007/978-3-642-17851-1_34</a>.","ieee":"T. Biermann, C. Dannewitz, and H. Karl, “FIT: Future Internet Toolbox,” in <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i>, 2010, pp. 442--453.","apa":"Biermann, T., Dannewitz, C., &#38; Karl, H. (2010). FIT: Future Internet Toolbox. In <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i> (pp. 442--453). <a href=\"https://doi.org/10.1007/978-3-642-17851-1_34\">https://doi.org/10.1007/978-3-642-17851-1_34</a>","bibtex":"@inproceedings{Biermann_Dannewitz_Karl_2010, title={FIT: Future Internet Toolbox}, DOI={<a href=\"https://doi.org/10.1007/978-3-642-17851-1_34\">10.1007/978-3-642-17851-1_34</a>}, booktitle={Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers}, author={Biermann, Thorsten and Dannewitz, Christian and Karl, Holger}, year={2010}, pages={442--453} }","ama":"Biermann T, Dannewitz C, Karl H. FIT: Future Internet Toolbox. In: <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i>. ; 2010:442--453. doi:<a href=\"https://doi.org/10.1007/978-3-642-17851-1_34\">10.1007/978-3-642-17851-1_34</a>","mla":"Biermann, Thorsten, et al. “FIT: Future Internet Toolbox.” <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i>, 2010, pp. 442--453, doi:<a href=\"https://doi.org/10.1007/978-3-642-17851-1_34\">10.1007/978-3-642-17851-1_34</a>."},"date_created":"2017-11-27T10:22:26Z","type":"conference","department":[{"_id":"75"}]},{"date_updated":"2022-01-06T07:03:51Z","year":"2010","title":"Prototyping with the Future Internet Toolbox","status":"public","author":[{"first_name":"Christian","last_name":"Dannewitz","full_name":"Dannewitz, Christian"},{"full_name":"Biermann, Thorsten","first_name":"Thorsten","last_name":"Biermann"},{"last_name":"Dräxler","first_name":"Martin","full_name":"Dräxler, Martin"},{"full_name":"Beister, Frederic","first_name":"Frederic","last_name":"Beister"},{"id":"126","first_name":"Holger","last_name":"Karl","full_name":"Karl, Holger"}],"user_id":"15572","doi":"10.1007/978-3-642-17851-1_56","page":"609--611","_id":"812","publication":"Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers","citation":{"chicago":"Dannewitz, Christian, Thorsten Biermann, Martin Dräxler, Frederic Beister, and Holger Karl. “Prototyping with the Future Internet Toolbox.” In <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i>, 609--611, 2010. <a href=\"https://doi.org/10.1007/978-3-642-17851-1_56\">https://doi.org/10.1007/978-3-642-17851-1_56</a>.","short":"C. Dannewitz, T. Biermann, M. Dräxler, F. Beister, H. Karl, in: Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers, 2010, pp. 609--611.","apa":"Dannewitz, C., Biermann, T., Dräxler, M., Beister, F., &#38; Karl, H. (2010). Prototyping with the Future Internet Toolbox. In <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i> (pp. 609--611). <a href=\"https://doi.org/10.1007/978-3-642-17851-1_56\">https://doi.org/10.1007/978-3-642-17851-1_56</a>","ieee":"C. Dannewitz, T. Biermann, M. Dräxler, F. Beister, and H. Karl, “Prototyping with the Future Internet Toolbox,” in <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i>, 2010, pp. 609--611.","ama":"Dannewitz C, Biermann T, Dräxler M, Beister F, Karl H. Prototyping with the Future Internet Toolbox. In: <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i>. ; 2010:609--611. doi:<a href=\"https://doi.org/10.1007/978-3-642-17851-1_56\">10.1007/978-3-642-17851-1_56</a>","bibtex":"@inproceedings{Dannewitz_Biermann_Dräxler_Beister_Karl_2010, title={Prototyping with the Future Internet Toolbox}, DOI={<a href=\"https://doi.org/10.1007/978-3-642-17851-1_56\">10.1007/978-3-642-17851-1_56</a>}, booktitle={Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers}, author={Dannewitz, Christian and Biermann, Thorsten and Dräxler, Martin and Beister, Frederic and Karl, Holger}, year={2010}, pages={609--611} }","mla":"Dannewitz, Christian, et al. “Prototyping with the Future Internet Toolbox.” <i>Testbeds and Research Infrastructures. Development of Networks and Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers</i>, 2010, pp. 609--611, doi:<a href=\"https://doi.org/10.1007/978-3-642-17851-1_56\">10.1007/978-3-642-17851-1_56</a>."},"type":"conference","department":[{"_id":"75"}],"date_created":"2017-11-27T10:22:26Z"},{"place":"Berlin/Heidelberg","date_created":"2018-12-11T11:45:21Z","type":"book_chapter","department":[{"_id":"274"}],"publication":"Innovation and International Corporate Growth","citation":{"bibtex":"@inbook{Schwens_Steinmetz_Kabst_2010, place={Berlin/Heidelberg}, title={Growth and Internationalization of Renewable Energy and New Technology-Based Firms}, booktitle={Innovation and International Corporate Growth}, publisher={Springer}, author={Schwens, C and Steinmetz, Holger and Kabst, Rüdiger}, editor={Gerybadze, A and Hommel, U and Reiner, H W and Thomaschweski, DEditors}, year={2010} }","short":"C. Schwens, H. Steinmetz, R. Kabst, in: A. Gerybadze, U. Hommel, H.W. Reiner, D. Thomaschweski (Eds.), Innovation and International Corporate Growth, Springer, Berlin/Heidelberg, 2010.","ama":"Schwens C, Steinmetz H, Kabst R. Growth and Internationalization of Renewable Energy and New Technology-Based Firms. In: Gerybadze A, Hommel U, Reiner HW, Thomaschweski D, eds. <i>Innovation and International Corporate Growth</i>. Berlin/Heidelberg: Springer; 2010.","chicago":"Schwens, C, Holger Steinmetz, and Rüdiger Kabst. “Growth and Internationalization of Renewable Energy and New Technology-Based Firms.” In <i>Innovation and International Corporate Growth</i>, edited by A Gerybadze, U Hommel, H W Reiner, and D Thomaschweski. Berlin/Heidelberg: Springer, 2010.","ieee":"C. Schwens, H. Steinmetz, and R. Kabst, “Growth and Internationalization of Renewable Energy and New Technology-Based Firms,” in <i>Innovation and International Corporate Growth</i>, A. Gerybadze, U. Hommel, H. W. Reiner, and D. Thomaschweski, Eds. Berlin/Heidelberg: Springer, 2010.","mla":"Schwens, C., et al. “Growth and Internationalization of Renewable Energy and New Technology-Based Firms.” <i>Innovation and International Corporate Growth</i>, edited by A Gerybadze et al., Springer, 2010.","apa":"Schwens, C., Steinmetz, H., &#38; Kabst, R. (2010). Growth and Internationalization of Renewable Energy and New Technology-Based Firms. In A. Gerybadze, U. Hommel, H. W. Reiner, &#38; D. Thomaschweski (Eds.), <i>Innovation and International Corporate Growth</i>. Berlin/Heidelberg: Springer."},"_id":"6154","publisher":"Springer","language":[{"iso":"eng"}],"user_id":"46632","editor":[{"full_name":"Gerybadze, A","first_name":"A","last_name":"Gerybadze"},{"full_name":"Hommel, U","last_name":"Hommel","first_name":"U"},{"full_name":"Reiner, H W","first_name":"H W","last_name":"Reiner"},{"first_name":"D","last_name":"Thomaschweski","full_name":"Thomaschweski, D"}],"year":"2010","status":"public","title":"Growth and Internationalization of Renewable Energy and New Technology-Based Firms","author":[{"full_name":"Schwens, C","last_name":"Schwens","first_name":"C"},{"id":"43261","last_name":"Steinmetz","first_name":"Holger","full_name":"Steinmetz, Holger"},{"id":"42362","full_name":"Kabst, Rüdiger","first_name":"Rüdiger","last_name":"Kabst"}],"date_updated":"2022-01-06T07:02:54Z"},{"citation":{"ieee":"E. M. Larramendi <i>et al.</i>, “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 2010.","apa":"Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>, <i>25</i>(7). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>","chicago":"Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner, U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i> 25, no. 7 (2010). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>.","short":"E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).","mla":"Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 075003, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>.","bibtex":"@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010, title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}, volume={25}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>}, number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}, year={2010} }","ama":"Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>. 2010;25(7). doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>"},"status":"public","publisher":"IOP Publishing","_id":"4549","user_id":"49428","volume":25,"publication":"Semiconductor Science and Technology","issue":"7","abstract":[{"lang":"eng","text":"Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point."}],"date_created":"2018-09-20T12:35:35Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"year":"2010","title":"Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers","publication_identifier":{"issn":["0268-1242","1361-6641"]},"author":[{"full_name":"Larramendi, E M","first_name":"E M","last_name":"Larramendi"},{"id":"53","first_name":"Gerhard","last_name":"Berth","full_name":"Berth, Gerhard"},{"full_name":"Wiedemeier, V","first_name":"V","last_name":"Wiedemeier"},{"first_name":"K-P","last_name":"Hüsch","full_name":"Hüsch, K-P"},{"full_name":"Zrenner, Artur","last_name":"Zrenner","first_name":"Artur","orcid":"0000-0002-5190-0944","id":"606"},{"full_name":"Woggon, U","first_name":"U","last_name":"Woggon"},{"last_name":"Tschumak","first_name":"E","full_name":"Tschumak, E"},{"full_name":"Lischka, K","last_name":"Lischka","first_name":"K"},{"first_name":"D","last_name":"Schikora","full_name":"Schikora, D"}],"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"        25","article_number":"075003","language":[{"iso":"eng"}],"doi":"10.1088/0268-1242/25/7/075003"},{"article_number":"143101","language":[{"iso":"eng"}],"doi":"10.1063/1.3488812","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","year":"2010","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Mehta, M.","last_name":"Mehta","first_name":"M."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"last_name":"Michaelis de Vasconcellos","first_name":"S.","full_name":"Michaelis de Vasconcellos, S."},{"full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","first_name":"Artur","last_name":"Zrenner","id":"606"},{"id":"20798","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik"}],"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"        97","date_created":"2018-09-20T12:38:51Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"publication":"Applied Physics Letters","issue":"14","abstract":[{"lang":"eng","text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices."}],"_id":"4550","publisher":"AIP Publishing","user_id":"20798","volume":97,"status":"public","citation":{"chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>."}},{"date_created":"2018-09-20T12:42:40Z","keyword":["Molecular beam epitaxy","Focused ion beam","Self-assembled quantum dot","Electroluminescence"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"issue":"10","publication":"Physica E: Low-dimensional Systems and Nanostructures","abstract":[{"text":"An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.","lang":"eng"}],"language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2009.12.053","title":"Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode","year":"2010","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Mehta, Minisha","first_name":"Minisha","last_name":"Mehta"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Melnikov, Alexander","first_name":"Alexander","last_name":"Melnikov"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"},{"full_name":"Michaelis de Vasconcellos, Steffen","first_name":"Steffen","last_name":"Michaelis de Vasconcellos"},{"full_name":"Baumgarten, Tim","first_name":"Tim","last_name":"Baumgarten"},{"id":"606","full_name":"Zrenner, Artur","first_name":"Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944"},{"id":"20798","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik"}],"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"        42","citation":{"apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos, S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2749–2752. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>","ieee":"M. Mehta <i>et al.</i>, “Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2749–2752, 2010.","chicago":"Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2749–52. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>.","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos, T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2749–2752.","mla":"Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>.","ama":"Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2749-2752. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010, title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }"},"page":"2749-2752","_id":"4551","publisher":"Elsevier BV","user_id":"20798","volume":42,"status":"public"},{"author":[{"last_name":"Hess","first_name":"D.","full_name":"Hess, D."},{"full_name":"Hüfner, Thorsten","last_name":"Hüfner","first_name":"Thorsten"},{"first_name":"Tobias","last_name":"Hesse","full_name":"Hesse, Tobias"},{"full_name":"Sondermann-Wölke, Christoph","last_name":"Sondermann-Wölke","first_name":"Christoph"},{"last_name":"Sattel","first_name":"Thomas","full_name":"Sattel, Thomas"}],"title":"Intelligente mechatronische Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen","status":"public","year":"2010","date_updated":"2022-01-06T07:04:19Z","_id":"9750","language":[{"iso":"eng"}],"user_id":"55222","citation":{"short":"D. Hess, T. Hüfner, T. Hesse, C. Sondermann-Wölke, T. Sattel, Internationales Mechatronik-Kolloquium “Mechatronik 2010” (2010).","chicago":"Hess, D., Thorsten Hüfner, Tobias Hesse, Christoph Sondermann-Wölke, and Thomas Sattel. “Intelligente Mechatronische Systeme Zur Automatisierten Fahrzeugführung in Fahrerassistenzsystemen.” <i>Internationales Mechatronik-Kolloquium “Mechatronik 2010,”</i> 2010.","apa":"Hess, D., Hüfner, T., Hesse, T., Sondermann-Wölke, C., &#38; Sattel, T. (2010). Intelligente mechatronische Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen. <i>Internationales Mechatronik-Kolloquium “Mechatronik 2010.”</i>","ieee":"D. Hess, T. Hüfner, T. Hesse, C. Sondermann-Wölke, and T. Sattel, “Intelligente mechatronische Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen,” <i>Internationales Mechatronik-Kolloquium “Mechatronik 2010,”</i> 2010.","ama":"Hess D, Hüfner T, Hesse T, Sondermann-Wölke C, Sattel T. Intelligente mechatronische Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen. <i>Internationales Mechatronik-Kolloquium “Mechatronik 2010.”</i> 2010.","bibtex":"@article{Hess_Hüfner_Hesse_Sondermann-Wölke_Sattel_2010, title={Intelligente mechatronische Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen}, journal={Internationales Mechatronik-Kolloquium “Mechatronik 2010”}, author={Hess, D. and Hüfner, Thorsten and Hesse, Tobias and Sondermann-Wölke, Christoph and Sattel, Thomas}, year={2010} }","mla":"Hess, D., et al. “Intelligente Mechatronische Systeme Zur Automatisierten Fahrzeugführung in Fahrerassistenzsystemen.” <i>Internationales Mechatronik-Kolloquium “Mechatronik 2010,”</i> 2010."},"publication":"Internationales Mechatronik-Kolloquium \"Mechatronik 2010\"","date_created":"2019-05-13T09:58:41Z","department":[{"_id":"151"}],"type":"journal_article"},{"department":[{"_id":"151"}],"keyword":["Lead-free piezoelectric material","KNN","Hydrothermal method"],"type":"journal_article","date_created":"2019-05-13T10:19:43Z","abstract":[{"text":"As a lead-free piezoelectric ceramics, (K,Na)NbO$_{3}$ is a promising material because of its good piezoelectric properties. In this study, (K$_{1-x}$Na$_{x}$)NbO$_{3}$ ceramics were synthesized from a KNbO$_{3}$ and NaNbO$_{3}$ mixture powder prepared by the hydrothermal reaction. The hydrothermal reaction enables the production of high quality powder for the ceramics fabrication process. To obtain (K$_{1-x}$Na$_{x}$)NbO$_{3}$ ceramics, these two powders KNbO$_{3}$ and NaNbO$_{3}$ were mixed and then sintered together. X-Ray diffraction analysis revealed that the solid solution ceramics (K$_{1-x}$Na$_{x}$)NbO$_{3}$ was produced by the sintering process. The K/Na ratio in (K$_{1-x}$Na$_{x}$)NbO$_{3}$ ceramics was optimized for the best piezoelectric properties. The optimized forms was (K$_{0.48}$Na$_{0.52}$)NbO$_{3}$, which showed the following piezoelectric properties; k$_{33}$=0.56, d$_{33}$=114pC/N. In addition, the ferroelectric properties, P$_{r}$=7.72mC/cm$^{2}$, E$_{c}$=857V/mm, and the Curie temperature T$_{c}$=420$_{o}$C were also measured.","lang":"eng"}],"issue":"4","publication":"Journal of Korean Physical Society","doi":"10.3938/jkps.57.924","language":[{"iso":"eng"}],"intvolume":"        57","date_updated":"2022-01-06T07:04:19Z","author":[{"full_name":"Maeda, Takafumi","first_name":"Takafumi","last_name":"Maeda"},{"full_name":"Takiguchi, Norihito","last_name":"Takiguchi","first_name":"Norihito"},{"last_name":"Morita","first_name":"Takeshi","full_name":"Morita, Takeshi"},{"first_name":"Mutsuo","last_name":"Ishikawa","full_name":"Ishikawa, Mutsuo"},{"id":"210","last_name":"Hemsel","first_name":"Tobias","full_name":"Hemsel, Tobias"}],"publication_identifier":{"issn":["1948-5719"]},"year":"2010","title":"Hydrothermal (K1-xNax)NbO3 Lead-free Piezoelectric Ceramics","quality_controlled":"1","citation":{"mla":"Maeda, Takafumi, et al. “Hydrothermal (K1-XNax)NbO3 Lead-Free Piezoelectric Ceramics.” <i>Journal of Korean Physical Society</i>, vol. 57, no. 4, 2010, pp. 924–28, doi:<a href=\"https://doi.org/10.3938/jkps.57.924\">10.3938/jkps.57.924</a>.","bibtex":"@article{Maeda_Takiguchi_Morita_Ishikawa_Hemsel_2010, title={Hydrothermal (K1-xNax)NbO3 Lead-free Piezoelectric Ceramics}, volume={57}, DOI={<a href=\"https://doi.org/10.3938/jkps.57.924\">10.3938/jkps.57.924</a>}, number={4}, journal={Journal of Korean Physical Society}, author={Maeda, Takafumi and Takiguchi, Norihito and Morita, Takeshi and Ishikawa, Mutsuo and Hemsel, Tobias}, year={2010}, pages={924–928} }","ama":"Maeda T, Takiguchi N, Morita T, Ishikawa M, Hemsel T. Hydrothermal (K1-xNax)NbO3 Lead-free Piezoelectric Ceramics. <i>Journal of Korean Physical Society</i>. 2010;57(4):924-928. doi:<a href=\"https://doi.org/10.3938/jkps.57.924\">10.3938/jkps.57.924</a>","ieee":"T. Maeda, N. Takiguchi, T. Morita, M. Ishikawa, and T. Hemsel, “Hydrothermal (K1-xNax)NbO3 Lead-free Piezoelectric Ceramics,” <i>Journal of Korean Physical Society</i>, vol. 57, no. 4, pp. 924–928, 2010.","apa":"Maeda, T., Takiguchi, N., Morita, T., Ishikawa, M., &#38; Hemsel, T. (2010). Hydrothermal (K1-xNax)NbO3 Lead-free Piezoelectric Ceramics. <i>Journal of Korean Physical Society</i>, <i>57</i>(4), 924–928. <a href=\"https://doi.org/10.3938/jkps.57.924\">https://doi.org/10.3938/jkps.57.924</a>","chicago":"Maeda, Takafumi, Norihito Takiguchi, Takeshi Morita, Mutsuo Ishikawa, and Tobias Hemsel. “Hydrothermal (K1-XNax)NbO3 Lead-Free Piezoelectric Ceramics.” <i>Journal of Korean Physical Society</i> 57, no. 4 (2010): 924–28. <a href=\"https://doi.org/10.3938/jkps.57.924\">https://doi.org/10.3938/jkps.57.924</a>.","short":"T. Maeda, N. Takiguchi, T. Morita, M. Ishikawa, T. Hemsel, Journal of Korean Physical Society 57 (2010) 924–928."},"volume":57,"user_id":"55222","_id":"9758","page":"924-928","status":"public"},{"quality_controlled":"1","citation":{"mla":"Maeda, Takafumi, et al. “(K,Na)NbO3 Lead-Free Piezoelectric Ceramics Synthesized from Hydrothermal Powders.” <i>Materials Letters</i>, vol. 64, no. 2, 2010, pp. 125–28, doi:<a href=\"https://doi.org/10.1016/j.matlet.2009.10.012\">10.1016/j.matlet.2009.10.012</a>.","ama":"Maeda T, Takiguchi N, Morita T, Ishikawa M, Hemsel T. (K,Na)NbO3 lead-free piezoelectric ceramics synthesized from hydrothermal powders. <i>Materials Letters</i>. 2010;64(2):125-128. doi:<a href=\"https://doi.org/10.1016/j.matlet.2009.10.012\">10.1016/j.matlet.2009.10.012</a>","bibtex":"@article{Maeda_Takiguchi_Morita_Ishikawa_Hemsel_2010, title={(K,Na)NbO3 lead-free piezoelectric ceramics synthesized from hydrothermal powders}, volume={64}, DOI={<a href=\"https://doi.org/10.1016/j.matlet.2009.10.012\">10.1016/j.matlet.2009.10.012</a>}, number={2}, journal={Materials Letters}, author={Maeda, Takafumi and Takiguchi, Norihito and Morita, Takeshi and Ishikawa, Mutsuo and Hemsel, Tobias}, year={2010}, pages={125–128} }","apa":"Maeda, T., Takiguchi, N., Morita, T., Ishikawa, M., &#38; Hemsel, T. (2010). (K,Na)NbO3 lead-free piezoelectric ceramics synthesized from hydrothermal powders. <i>Materials Letters</i>, <i>64</i>(2), 125–128. <a href=\"https://doi.org/10.1016/j.matlet.2009.10.012\">https://doi.org/10.1016/j.matlet.2009.10.012</a>","ieee":"T. Maeda, N. Takiguchi, T. Morita, M. Ishikawa, and T. Hemsel, “(K,Na)NbO3 lead-free piezoelectric ceramics synthesized from hydrothermal powders,” <i>Materials Letters</i>, vol. 64, no. 2, pp. 125–128, 2010.","chicago":"Maeda, Takafumi, Norihito Takiguchi, Takeshi Morita, Mutsuo Ishikawa, and Tobias Hemsel. “(K,Na)NbO3 Lead-Free Piezoelectric Ceramics Synthesized from Hydrothermal Powders.” <i>Materials Letters</i> 64, no. 2 (2010): 125–28. <a href=\"https://doi.org/10.1016/j.matlet.2009.10.012\">https://doi.org/10.1016/j.matlet.2009.10.012</a>.","short":"T. Maeda, N. Takiguchi, T. Morita, M. Ishikawa, T. Hemsel, Materials Letters 64 (2010) 125–128."},"status":"public","user_id":"55222","volume":64,"page":"125-128","_id":"9759","abstract":[{"text":"Among various lead-free piezoelectric materials, (K,Na)NbO$_{3}$ is a very promising candidate. In this study, (K,Na)NbO$_{3}$ ceramics were sintered from mixed (K,Na)NbO$_{3}$ and NaNbO$_{3}$ powders prepared by hydrothermal reaction. These two powders were mixed with distilled water in a KNbO$_{3}$/NaNbO$_{3}$ molar ratio of 1. After sintering the mixed powder, the solid solution of (Na,K)NbO$_{3}$ ceramics was obtained. The electrical properties such as the electromechanical coupling factors k$_{p}$ and k$_{33}$, the mechanical quality factor, Q$_{m}$, and the piezoelectric constant d$_{33}$ of the sintered (K,Na)NbO$_{3}$ ceramics were 0.32, 0.48, 71 (radial mode), 118 ((33)mode), and 107 pC/N, respectively.","lang":"eng"}],"publication":"Materials Letters","issue":"2","keyword":["Lead-free piezoelectric material","(K","Na)NbO$_{3}$ ceramics","Sintering solid solution","Piezoelectric properties"],"type":"journal_article","department":[{"_id":"151"}],"date_created":"2019-05-13T10:21:17Z","date_updated":"2022-01-06T07:04:19Z","intvolume":"        64","title":"(K,Na)NbO3 lead-free piezoelectric ceramics synthesized from hydrothermal powders","year":"2010","publication_identifier":{"issn":["1948-5719"]},"author":[{"first_name":"Takafumi","last_name":"Maeda","full_name":"Maeda, Takafumi"},{"first_name":"Norihito","last_name":"Takiguchi","full_name":"Takiguchi, Norihito"},{"full_name":"Morita, Takeshi","first_name":"Takeshi","last_name":"Morita"},{"full_name":"Ishikawa, Mutsuo","first_name":"Mutsuo","last_name":"Ishikawa"},{"id":"210","first_name":"Tobias","last_name":"Hemsel","full_name":"Hemsel, Tobias"}],"doi":"10.1016/j.matlet.2009.10.012","language":[{"iso":"eng"}]},{"publication":"JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS","issue":"3","citation":{"ama":"Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>. 2010;12(3):740-744.","bibtex":"@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744} }","mla":"Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, 2010, pp. 740–44.","chicago":"Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i> 12, no. 3 (2010): 740–44.","short":"D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.","apa":"Gogel, D., Weinl, M., Lindner, J., &#38; Stritzker, B. (2010). Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, <i>12</i>(3), 740–744.","ieee":"D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of nanosphere lithography masks made of polystyrene beads,” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, pp. 740–744, 2010."},"abstract":[{"lang":"eng","text":"Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL."}],"date_created":"2018-08-27T13:29:28Z","type":"journal_article","department":[{"_id":"286"},{"_id":"230"}],"status":"public","title":"Plasma modification of nanosphere lithography masks made of polystyrene beads","year":"2010","author":[{"full_name":"Gogel, D.","last_name":"Gogel","first_name":"D."},{"first_name":"M.","last_name":"Weinl","full_name":"Weinl, M."},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."}],"date_updated":"2022-01-06T07:00:26Z","article_type":"original","intvolume":"        12","page":"740-744","_id":"4153","language":[{"iso":"eng"}],"user_id":"55706","volume":12},{"publisher":"American Physical Society (APS)","_id":"4200","ddc":["530"],"user_id":"55706","volume":82,"status":"public","has_accepted_license":"1","file_date_updated":"2018-08-28T12:23:29Z","citation":{"bibtex":"@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>}, number={5054517}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S. and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }","ama":"Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>. 2010;82(5). doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>","mla":"Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i>, vol. 82, no. 5, 054517, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>.","chicago":"Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i> 82, no. 5 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>.","short":"V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010).","ieee":"V. I. Zdravkov <i>et al.</i>, “Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers,” <i>Physical Review B</i>, vol. 82, no. 5, 2010.","apa":"Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller, C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>, <i>82</i>(5). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>"},"article_number":"054517","language":[{"iso":"eng"}],"doi":"10.1103/physrevb.82.054517","title":"Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers","year":"2010","author":[{"last_name":"Zdravkov","first_name":"V. I.","full_name":"Zdravkov, V. I."},{"full_name":"Kehrle, J.","first_name":"J.","last_name":"Kehrle"},{"full_name":"Obermeier, G.","last_name":"Obermeier","first_name":"G."},{"full_name":"Gsell, S.","first_name":"S.","last_name":"Gsell"},{"full_name":"Schreck, M.","last_name":"Schreck","first_name":"M."},{"last_name":"Müller","first_name":"C.","full_name":"Müller, C."},{"last_name":"Krug von Nidda","first_name":"H.-A.","full_name":"Krug von Nidda, H.-A."},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"},{"first_name":"J.","last_name":"Moosburger-Will","full_name":"Moosburger-Will, J."},{"full_name":"Nold, E.","first_name":"E.","last_name":"Nold"},{"first_name":"R.","last_name":"Morari","full_name":"Morari, R."},{"full_name":"Ryazanov, V. V.","last_name":"Ryazanov","first_name":"V. V."},{"full_name":"Sidorenko, A. S.","first_name":"A. S.","last_name":"Sidorenko"},{"full_name":"Horn, S.","first_name":"S.","last_name":"Horn"},{"full_name":"Tidecks, R.","first_name":"R.","last_name":"Tidecks"},{"full_name":"Tagirov, L. R.","last_name":"Tagirov","first_name":"L. R."}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"date_updated":"2022-01-06T07:00:34Z","publication_status":"published","intvolume":"        82","article_type":"original","file":[{"creator":"hclaudia","date_created":"2018-08-28T12:23:29Z","relation":"main_file","date_updated":"2018-08-28T12:23:29Z","file_name":"Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf","file_size":723266,"access_level":"closed","file_id":"4201","content_type":"application/pdf","success":1}],"date_created":"2018-08-28T12:22:11Z","type":"journal_article","department":[{"_id":"15"}],"publication":"Physical Review B","issue":"5","abstract":[{"text":"We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering\r\nspectrometry, high-resolution transmission electron microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic alloy layer were characterized with superconducting quantum interference\r\ndevice magnetometry. These studies yield precise information about the thickness and demonstrate the homogeneity\r\nof the alloy composition and magnetic properties along the sample series. The dependencies of the\r\ncritical temperature on the Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F predicted by the theory could be realized experimentally, from\r\nreentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of\r\nparameters. Then, T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch core\r\nstructure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved results.","lang":"eng"}],"extern":"1"},{"date_created":"2018-08-28T12:27:34Z","file":[{"file_id":"4203","content_type":"application/pdf","success":1,"file_name":"Characterization of unintentional doping in nonpolar GaN.pdf","access_level":"closed","file_size":688753,"relation":"main_file","date_updated":"2018-08-28T12:28:22Z","date_created":"2018-08-28T12:28:22Z","creator":"hclaudia"}],"department":[{"_id":"15"}],"type":"journal_article","issue":"2","publication":"Journal of Applied Physics","extern":"1","abstract":[{"text":"Unintentional doping in nonpolar a-plane \u0001112¯0\u0002 gallium nitride \u0001GaN\u0002 grown on r-plane \u000111¯02\u0002\r\nsapphire using a three-dimensional \u00013D\u0002–two-dimensional \u00012D\u0002 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \u0001SCM\u0002. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \u00012.5\u00010.3\u0002\u00021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\u0001BSFs\u0002 and prismatic stacking faults \u0001PSFs\u0002, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface.","lang":"eng"}],"language":[{"iso":"eng"}],"article_number":"023503","doi":"10.1063/1.3284944","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"first_name":"Tongtong","last_name":"Zhu","full_name":"Zhu, Tongtong"},{"full_name":"Johnston, Carol F.","first_name":"Carol F.","last_name":"Johnston"},{"full_name":"Häberlen, Maik","first_name":"Maik","last_name":"Häberlen"},{"full_name":"Kappers, Menno J.","first_name":"Menno J.","last_name":"Kappers"},{"first_name":"Rachel A.","last_name":"Oliver","full_name":"Oliver, Rachel A."}],"title":"Characterization of unintentional doping in nonpolar GaN","year":"2010","article_type":"original","intvolume":"       107","publication_status":"published","date_updated":"2022-01-06T07:00:34Z","citation":{"chicago":"Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i> 107, no. 2 (2010). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>.","short":"T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).","apa":"Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., &#38; Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>, <i>107</i>(2). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>","ieee":"T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 2010.","ama":"Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>. 2010;107(2). doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>","bibtex":"@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }","mla":"Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>."},"file_date_updated":"2018-08-28T12:28:22Z","_id":"4202","publisher":"AIP Publishing","volume":107,"user_id":"55706","ddc":["530"],"status":"public","has_accepted_license":"1"},{"date_created":"2018-08-28T12:38:16Z","type":"book_editor","department":[{"_id":"15"},{"_id":"286"}],"citation":{"ieee":"D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., <i>Ion Beams and Nano-Engineering</i>, vol. 1181. MRS Symposium Proceedings , 2010.","mla":"Ila, D., et al., editors. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181, MRS Symposium Proceedings , 2010.","apa":"Ila, D., Kishimoto, N., Lindner, J., &#38; Baglin, J. (Eds.). (2010). <i>Ion Beams and Nano-Engineering</i> (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .","bibtex":"@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering}, volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }","short":"D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.","ama":"Ila D, Kishimoto N, Lindner J, Baglin J, eds. <i>Ion Beams and Nano-Engineering</i>. Vol 1181. MRS Symposium Proceedings ; 2010.","chicago":"Ila, D., N.  Kishimoto, Jörg Lindner, and J. Baglin, eds. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181. MRS Symposium Proceedings , 2010."},"publisher":"MRS Symposium Proceedings ","_id":"4207","language":[{"iso":"eng"}],"user_id":"55706","volume":1181,"editor":[{"last_name":"Ila","first_name":"D.","full_name":"Ila, D."},{"full_name":"Kishimoto, N. ","last_name":"Kishimoto","first_name":"N. "},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"},{"first_name":"J.","last_name":"Baglin","full_name":"Baglin, J."}],"year":"2010","status":"public","title":"Ion Beams and Nano-Engineering","publication_identifier":{"isbn":["978-1-60511-154-4"]},"conference":{"name":"MRS Spring Meeting 2009","location":"San Francisco (USA)"},"publication_status":"published","date_updated":"2022-01-06T07:00:35Z","intvolume":"      1181"}]