---
_id: '7987'
author:
- first_name: Bastian
full_name: Marquardt, Bastian
last_name: Marquardt
- first_name: Martin
full_name: Geller, Martin
last_name: Geller
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: 'Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. A two-dimensional electron
gas as a sensitive detector to observe the charge carrier dynamics of self-assembled
QDs. Physica E: Low-dimensional Systems and Nanostructures. 2010;42(10):2598-2601.
doi:10.1016/j.physe.2010.02.010'
apa: 'Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2010).
A two-dimensional electron gas as a sensitive detector to observe the charge carrier
dynamics of self-assembled QDs. Physica E: Low-Dimensional Systems and Nanostructures,
42(10), 2598–2601. https://doi.org/10.1016/j.physe.2010.02.010'
bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2010, title={A two-dimensional
electron gas as a sensitive detector to observe the charge carrier dynamics of
self-assembled QDs}, volume={42}, DOI={10.1016/j.physe.2010.02.010},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Marquardt, Bastian and Geller, Martin and Lorke,
Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2010}, pages={2598–2601} }'
chicago: 'Marquardt, Bastian, Martin Geller, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “A Two-Dimensional Electron Gas as a Sensitive Detector to Observe the
Charge Carrier Dynamics of Self-Assembled QDs.” Physica E: Low-Dimensional
Systems and Nanostructures 42, no. 10 (2010): 2598–2601. https://doi.org/10.1016/j.physe.2010.02.010.'
ieee: 'B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “A two-dimensional
electron gas as a sensitive detector to observe the charge carrier dynamics of
self-assembled QDs,” Physica E: Low-dimensional Systems and Nanostructures,
vol. 42, no. 10, pp. 2598–2601, 2010.'
mla: 'Marquardt, Bastian, et al. “A Two-Dimensional Electron Gas as a Sensitive
Detector to Observe the Charge Carrier Dynamics of Self-Assembled QDs.” Physica
E: Low-Dimensional Systems and Nanostructures, vol. 42, no. 10, Elsevier BV,
2010, pp. 2598–601, doi:10.1016/j.physe.2010.02.010.'
short: 'B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional
Systems and Nanostructures 42 (2010) 2598–2601.'
date_created: 2019-02-21T14:39:07Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.physe.2010.02.010
intvolume: ' 42'
issue: '10'
language:
- iso: eng
page: 2598-2601
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: A two-dimensional electron gas as a sensitive detector to observe the charge
carrier dynamics of self-assembled QDs
type: journal_article
user_id: '42514'
volume: 42
year: '2010'
...
---
_id: '7989'
author:
- first_name: Christoph
full_name: Kreisbeck, Christoph
last_name: Kreisbeck
- first_name: Tobias
full_name: Kramer, Tobias
last_name: Kramer
- first_name: Sven S.
full_name: Buchholz, Sven S.
last_name: Buchholz
- first_name: Saskia F.
full_name: Fischer, Saskia F.
last_name: Fischer
- first_name: Ulrich
full_name: Kunze, Ulrich
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Kreisbeck C, Kramer T, Buchholz SS, et al. Phase shifts and phaseπjumps in
four-terminal waveguide Aharonov-Bohm interferometers. Physical Review B.
2010;82(16). doi:10.1103/physrevb.82.165329
apa: Kreisbeck, C., Kramer, T., Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter,
D., & Wieck, A. D. (2010). Phase shifts and phaseπjumps in four-terminal waveguide
Aharonov-Bohm interferometers. Physical Review B, 82(16). https://doi.org/10.1103/physrevb.82.165329
bibtex: '@article{Kreisbeck_Kramer_Buchholz_Fischer_Kunze_Reuter_Wieck_2010, title={Phase
shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers},
volume={82}, DOI={10.1103/physrevb.82.165329},
number={16}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Kreisbeck, Christoph and Kramer, Tobias and Buchholz, Sven S.
and Fischer, Saskia F. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D.},
year={2010} }'
chicago: Kreisbeck, Christoph, Tobias Kramer, Sven S. Buchholz, Saskia F. Fischer,
Ulrich Kunze, Dirk Reuter, and Andreas D. Wieck. “Phase Shifts and Phaseπjumps
in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” Physical Review
B 82, no. 16 (2010). https://doi.org/10.1103/physrevb.82.165329.
ieee: C. Kreisbeck et al., “Phase shifts and phaseπjumps in four-terminal
waveguide Aharonov-Bohm interferometers,” Physical Review B, vol. 82, no.
16, 2010.
mla: Kreisbeck, Christoph, et al. “Phase Shifts and Phaseπjumps in Four-Terminal
Waveguide Aharonov-Bohm Interferometers.” Physical Review B, vol. 82, no.
16, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.165329.
short: C. Kreisbeck, T. Kramer, S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter,
A.D. Wieck, Physical Review B 82 (2010).
date_created: 2019-02-21T14:40:35Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.82.165329
intvolume: ' 82'
issue: '16'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers
type: journal_article
user_id: '42514'
volume: 82
year: '2010'
...
---
_id: '7990'
article_number: '143101'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: C.
full_name: Meier, C.
last_name: Meier
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, A. and Meier, C.}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized
Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2019-02-21T14:41:19Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7991'
article_number: '012043'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: R
full_name: Roescu, R
last_name: Roescu
- first_name: U
full_name: Zeitler, U
last_name: Zeitler
- first_name: J C
full_name: Maan, J C
last_name: Maan
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: 'Reuter D, Roescu R, Zeitler U, Maan JC, Wieck AD. Capacitance-voltage spectroscopy
on InAs quantum dot valence band states in tilted magnetic fields. Journal
of Physics: Conference Series. 2010;245. doi:10.1088/1742-6596/245/1/012043'
apa: 'Reuter, D., Roescu, R., Zeitler, U., Maan, J. C., & Wieck, A. D. (2010).
Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted
magnetic fields. Journal of Physics: Conference Series, 245. https://doi.org/10.1088/1742-6596/245/1/012043'
bibtex: '@article{Reuter_Roescu_Zeitler_Maan_Wieck_2010, title={Capacitance-voltage
spectroscopy on InAs quantum dot valence band states in tilted magnetic fields},
volume={245}, DOI={10.1088/1742-6596/245/1/012043},
number={012043}, journal={Journal of Physics: Conference Series}, publisher={IOP
Publishing}, author={Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and
Wieck, A D}, year={2010} }'
chicago: 'Reuter, Dirk, R Roescu, U Zeitler, J C Maan, and A D Wieck. “Capacitance-Voltage
Spectroscopy on InAs Quantum Dot Valence Band States in Tilted Magnetic Fields.”
Journal of Physics: Conference Series 245 (2010). https://doi.org/10.1088/1742-6596/245/1/012043.'
ieee: 'D. Reuter, R. Roescu, U. Zeitler, J. C. Maan, and A. D. Wieck, “Capacitance-voltage
spectroscopy on InAs quantum dot valence band states in tilted magnetic fields,”
Journal of Physics: Conference Series, vol. 245, 2010.'
mla: 'Reuter, Dirk, et al. “Capacitance-Voltage Spectroscopy on InAs Quantum Dot
Valence Band States in Tilted Magnetic Fields.” Journal of Physics: Conference
Series, vol. 245, 012043, IOP Publishing, 2010, doi:10.1088/1742-6596/245/1/012043.'
short: 'D. Reuter, R. Roescu, U. Zeitler, J.C. Maan, A.D. Wieck, Journal of Physics:
Conference Series 245 (2010).'
date_created: 2019-02-21T14:42:01Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1742-6596/245/1/012043
intvolume: ' 245'
language:
- iso: eng
publication: 'Journal of Physics: Conference Series'
publication_identifier:
issn:
- 1742-6596
publication_status: published
publisher: IOP Publishing
status: public
title: Capacitance-voltage spectroscopy on InAs quantum dot valence band states in
tilted magnetic fields
type: journal_article
user_id: '42514'
volume: 245
year: '2010'
...
---
_id: '7992'
article_number: '113040'
author:
- first_name: P J
full_name: Rizo, P J
last_name: Rizo
- first_name: A
full_name: Pugzlys, A
last_name: Pugzlys
- first_name: A
full_name: Slachter, A
last_name: Slachter
- first_name: S Z
full_name: Denega, S Z
last_name: Denega
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
- first_name: P H M
full_name: van Loosdrecht, P H M
last_name: van Loosdrecht
- first_name: C H
full_name: van der Wal, C H
last_name: van der Wal
citation:
ama: Rizo PJ, Pugzlys A, Slachter A, et al. Optical probing of spin dynamics of
two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system. New
Journal of Physics. 2010;12(11). doi:10.1088/1367-2630/12/11/113040
apa: Rizo, P. J., Pugzlys, A., Slachter, A., Denega, S. Z., Reuter, D., Wieck, A.
D., … van der Wal, C. H. (2010). Optical probing of spin dynamics of two-dimensional
and bulk electrons in a GaAs/AlGaAs heterojunction system. New Journal of Physics,
12(11). https://doi.org/10.1088/1367-2630/12/11/113040
bibtex: '@article{Rizo_Pugzlys_Slachter_Denega_Reuter_Wieck_van Loosdrecht_van der
Wal_2010, title={Optical probing of spin dynamics of two-dimensional and bulk
electrons in a GaAs/AlGaAs heterojunction system}, volume={12}, DOI={10.1088/1367-2630/12/11/113040},
number={11113040}, journal={New Journal of Physics}, publisher={IOP Publishing},
author={Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk
and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}, year={2010} }'
chicago: Rizo, P J, A Pugzlys, A Slachter, S Z Denega, Dirk Reuter, A D Wieck, P
H M van Loosdrecht, and C H van der Wal. “Optical Probing of Spin Dynamics of
Two-Dimensional and Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” New
Journal of Physics 12, no. 11 (2010). https://doi.org/10.1088/1367-2630/12/11/113040.
ieee: P. J. Rizo et al., “Optical probing of spin dynamics of two-dimensional
and bulk electrons in a GaAs/AlGaAs heterojunction system,” New Journal of
Physics, vol. 12, no. 11, 2010.
mla: Rizo, P. J., et al. “Optical Probing of Spin Dynamics of Two-Dimensional and
Bulk Electrons in a GaAs/AlGaAs Heterojunction System.” New Journal of Physics,
vol. 12, no. 11, 113040, IOP Publishing, 2010, doi:10.1088/1367-2630/12/11/113040.
short: P.J. Rizo, A. Pugzlys, A. Slachter, S.Z. Denega, D. Reuter, A.D. Wieck, P.H.M.
van Loosdrecht, C.H. van der Wal, New Journal of Physics 12 (2010).
date_created: 2019-02-21T14:42:45Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1367-2630/12/11/113040
intvolume: ' 12'
issue: '11'
language:
- iso: eng
publication: New Journal of Physics
publication_identifier:
issn:
- 1367-2630
publication_status: published
publisher: IOP Publishing
status: public
title: Optical probing of spin dynamics of two-dimensional and bulk electrons in a
GaAs/AlGaAs heterojunction system
type: journal_article
user_id: '42514'
volume: 12
year: '2010'
...
---
_id: '808'
author:
- first_name: Matthias
full_name: Andree, Matthias
last_name: Andree
- first_name: Alexander
full_name: Gebel, Alexander
last_name: Gebel
- first_name: Holger
full_name: Karl, Holger
id: '126'
last_name: Karl
citation:
ama: 'Andree M, Gebel A, Karl H. Concept and Prototype for a Real-Time Enabled Publish/Subscribe
System. In: 10th IEEE International Conference on Computer and Information
Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010.
; 2010:737--742. doi:10.1109/CIT.2010.142'
apa: Andree, M., Gebel, A., & Karl, H. (2010). Concept and Prototype for a Real-Time
Enabled Publish/Subscribe System. In 10th IEEE International Conference on
Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June
29-July 1, 2010 (pp. 737--742). https://doi.org/10.1109/CIT.2010.142
bibtex: '@inproceedings{Andree_Gebel_Karl_2010, title={Concept and Prototype for
a Real-Time Enabled Publish/Subscribe System}, DOI={10.1109/CIT.2010.142},
booktitle={10th IEEE International Conference on Computer and Information Technology,
CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010}, author={Andree,
Matthias and Gebel, Alexander and Karl, Holger}, year={2010}, pages={737--742}
}'
chicago: Andree, Matthias, Alexander Gebel, and Holger Karl. “Concept and Prototype
for a Real-Time Enabled Publish/Subscribe System.” In 10th IEEE International
Conference on Computer and Information Technology, CIT 2010, Bradford, West Yorkshire,
UK, June 29-July 1, 2010, 737--742, 2010. https://doi.org/10.1109/CIT.2010.142.
ieee: M. Andree, A. Gebel, and H. Karl, “Concept and Prototype for a Real-Time Enabled
Publish/Subscribe System,” in 10th IEEE International Conference on Computer
and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June 29-July
1, 2010, 2010, pp. 737--742.
mla: Andree, Matthias, et al. “Concept and Prototype for a Real-Time Enabled Publish/Subscribe
System.” 10th IEEE International Conference on Computer and Information Technology,
CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010, 2010, pp. 737--742,
doi:10.1109/CIT.2010.142.
short: 'M. Andree, A. Gebel, H. Karl, in: 10th IEEE International Conference on
Computer and Information Technology, CIT 2010, Bradford, West Yorkshire, UK, June
29-July 1, 2010, 2010, pp. 737--742.'
date_created: 2017-11-27T10:22:26Z
date_updated: 2022-01-06T07:03:50Z
department:
- _id: '75'
doi: 10.1109/CIT.2010.142
page: 737--742
publication: 10th IEEE International Conference on Computer and Information Technology,
CIT 2010, Bradford, West Yorkshire, UK, June 29-July 1, 2010
status: public
title: Concept and Prototype for a Real-Time Enabled Publish/Subscribe System
type: conference
user_id: '15572'
year: '2010'
...
---
_id: '810'
author:
- first_name: Hermann
full_name: S. Lichte, Hermann
last_name: S. Lichte
- first_name: Hannes
full_name: Frey, Hannes
last_name: Frey
- first_name: Holger
full_name: Karl, Holger
id: '126'
last_name: Karl
citation:
ama: 'S. Lichte H, Frey H, Karl H. Fading-resistant low-latency broadcasts in wireless
multihop networks: the probabilistic cooperation diversity approach. In: Proceedings
of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing,
MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010. ; 2010:101--110. doi:10.1145/1860093.1860108'
apa: 'S. Lichte, H., Frey, H., & Karl, H. (2010). Fading-resistant low-latency
broadcasts in wireless multihop networks: the probabilistic cooperation diversity
approach. In Proceedings of the 11th ACM Interational Symposium on Mobile Ad
Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24,
2010 (pp. 101--110). https://doi.org/10.1145/1860093.1860108'
bibtex: '@inproceedings{S. Lichte_Frey_Karl_2010, title={Fading-resistant low-latency
broadcasts in wireless multihop networks: the probabilistic cooperation diversity
approach}, DOI={10.1145/1860093.1860108},
booktitle={Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc
Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010},
author={S. Lichte, Hermann and Frey, Hannes and Karl, Holger}, year={2010}, pages={101--110}
}'
chicago: 'S. Lichte, Hermann, Hannes Frey, and Holger Karl. “Fading-Resistant Low-Latency
Broadcasts in Wireless Multihop Networks: The Probabilistic Cooperation Diversity
Approach.” In Proceedings of the 11th ACM Interational Symposium on Mobile
Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24,
2010, 101--110, 2010. https://doi.org/10.1145/1860093.1860108.'
ieee: 'H. S. Lichte, H. Frey, and H. Karl, “Fading-resistant low-latency broadcasts
in wireless multihop networks: the probabilistic cooperation diversity approach,”
in Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking
and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010, 2010,
pp. 101--110.'
mla: 'S. Lichte, Hermann, et al. “Fading-Resistant Low-Latency Broadcasts in Wireless
Multihop Networks: The Probabilistic Cooperation Diversity Approach.” Proceedings
of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking and Computing,
MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010, 2010, pp. 101--110,
doi:10.1145/1860093.1860108.'
short: 'H. S. Lichte, H. Frey, H. Karl, in: Proceedings of the 11th ACM Interational
Symposium on Mobile Ad Hoc Networking and Computing, MobiHoc 2010, Chicago, IL,
USA, September 20-24, 2010, 2010, pp. 101--110.'
date_created: 2017-11-27T10:22:26Z
date_updated: 2022-01-06T07:03:50Z
department:
- _id: '75'
doi: 10.1145/1860093.1860108
page: 101--110
publication: Proceedings of the 11th ACM Interational Symposium on Mobile Ad Hoc Networking
and Computing, MobiHoc 2010, Chicago, IL, USA, September 20-24, 2010
status: public
title: 'Fading-resistant low-latency broadcasts in wireless multihop networks: the
probabilistic cooperation diversity approach'
type: conference
user_id: '15572'
year: '2010'
...
---
_id: '811'
author:
- first_name: Thorsten
full_name: Biermann, Thorsten
last_name: Biermann
- first_name: Christian
full_name: Dannewitz, Christian
last_name: Dannewitz
- first_name: Holger
full_name: Karl, Holger
id: '126'
last_name: Karl
citation:
ama: 'Biermann T, Dannewitz C, Karl H. FIT: Future Internet Toolbox. In: Testbeds
and Research Infrastructures. Development of Networks and Communities - 6th International
ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected
Papers. ; 2010:442--453. doi:10.1007/978-3-642-17851-1_34'
apa: 'Biermann, T., Dannewitz, C., & Karl, H. (2010). FIT: Future Internet Toolbox.
In Testbeds and Research Infrastructures. Development of Networks and Communities
- 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20,
2010, Revised Selected Papers (pp. 442--453). https://doi.org/10.1007/978-3-642-17851-1_34'
bibtex: '@inproceedings{Biermann_Dannewitz_Karl_2010, title={FIT: Future Internet
Toolbox}, DOI={10.1007/978-3-642-17851-1_34},
booktitle={Testbeds and Research Infrastructures. Development of Networks and
Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany,
May 18-20, 2010, Revised Selected Papers}, author={Biermann, Thorsten and Dannewitz,
Christian and Karl, Holger}, year={2010}, pages={442--453} }'
chicago: 'Biermann, Thorsten, Christian Dannewitz, and Holger Karl. “FIT: Future
Internet Toolbox.” In Testbeds and Research Infrastructures. Development of
Networks and Communities - 6th International ICST Conference, TridentCom 2010,
Berlin, Germany, May 18-20, 2010, Revised Selected Papers, 442--453, 2010.
https://doi.org/10.1007/978-3-642-17851-1_34.'
ieee: 'T. Biermann, C. Dannewitz, and H. Karl, “FIT: Future Internet Toolbox,” in
Testbeds and Research Infrastructures. Development of Networks and Communities
- 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20,
2010, Revised Selected Papers, 2010, pp. 442--453.'
mla: 'Biermann, Thorsten, et al. “FIT: Future Internet Toolbox.” Testbeds and
Research Infrastructures. Development of Networks and Communities - 6th International
ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected
Papers, 2010, pp. 442--453, doi:10.1007/978-3-642-17851-1_34.'
short: 'T. Biermann, C. Dannewitz, H. Karl, in: Testbeds and Research Infrastructures.
Development of Networks and Communities - 6th International ICST Conference, TridentCom
2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers, 2010, pp. 442--453.'
date_created: 2017-11-27T10:22:26Z
date_updated: 2022-01-06T07:03:50Z
department:
- _id: '75'
doi: 10.1007/978-3-642-17851-1_34
page: 442--453
publication: Testbeds and Research Infrastructures. Development of Networks and Communities
- 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20,
2010, Revised Selected Papers
status: public
title: 'FIT: Future Internet Toolbox'
type: conference
user_id: '15572'
year: '2010'
...
---
_id: '812'
author:
- first_name: Christian
full_name: Dannewitz, Christian
last_name: Dannewitz
- first_name: Thorsten
full_name: Biermann, Thorsten
last_name: Biermann
- first_name: Martin
full_name: Dräxler, Martin
last_name: Dräxler
- first_name: Frederic
full_name: Beister, Frederic
last_name: Beister
- first_name: Holger
full_name: Karl, Holger
id: '126'
last_name: Karl
citation:
ama: 'Dannewitz C, Biermann T, Dräxler M, Beister F, Karl H. Prototyping with the
Future Internet Toolbox. In: Testbeds and Research Infrastructures. Development
of Networks and Communities - 6th International ICST Conference, TridentCom 2010,
Berlin, Germany, May 18-20, 2010, Revised Selected Papers. ; 2010:609--611.
doi:10.1007/978-3-642-17851-1_56'
apa: Dannewitz, C., Biermann, T., Dräxler, M., Beister, F., & Karl, H. (2010).
Prototyping with the Future Internet Toolbox. In Testbeds and Research Infrastructures.
Development of Networks and Communities - 6th International ICST Conference, TridentCom
2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers (pp. 609--611).
https://doi.org/10.1007/978-3-642-17851-1_56
bibtex: '@inproceedings{Dannewitz_Biermann_Dräxler_Beister_Karl_2010, title={Prototyping
with the Future Internet Toolbox}, DOI={10.1007/978-3-642-17851-1_56},
booktitle={Testbeds and Research Infrastructures. Development of Networks and
Communities - 6th International ICST Conference, TridentCom 2010, Berlin, Germany,
May 18-20, 2010, Revised Selected Papers}, author={Dannewitz, Christian and Biermann,
Thorsten and Dräxler, Martin and Beister, Frederic and Karl, Holger}, year={2010},
pages={609--611} }'
chicago: Dannewitz, Christian, Thorsten Biermann, Martin Dräxler, Frederic Beister,
and Holger Karl. “Prototyping with the Future Internet Toolbox.” In Testbeds
and Research Infrastructures. Development of Networks and Communities - 6th International
ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected
Papers, 609--611, 2010. https://doi.org/10.1007/978-3-642-17851-1_56.
ieee: C. Dannewitz, T. Biermann, M. Dräxler, F. Beister, and H. Karl, “Prototyping
with the Future Internet Toolbox,” in Testbeds and Research Infrastructures.
Development of Networks and Communities - 6th International ICST Conference, TridentCom
2010, Berlin, Germany, May 18-20, 2010, Revised Selected Papers, 2010, pp.
609--611.
mla: Dannewitz, Christian, et al. “Prototyping with the Future Internet Toolbox.”
Testbeds and Research Infrastructures. Development of Networks and Communities
- 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20,
2010, Revised Selected Papers, 2010, pp. 609--611, doi:10.1007/978-3-642-17851-1_56.
short: 'C. Dannewitz, T. Biermann, M. Dräxler, F. Beister, H. Karl, in: Testbeds
and Research Infrastructures. Development of Networks and Communities - 6th International
ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20, 2010, Revised Selected
Papers, 2010, pp. 609--611.'
date_created: 2017-11-27T10:22:26Z
date_updated: 2022-01-06T07:03:51Z
department:
- _id: '75'
doi: 10.1007/978-3-642-17851-1_56
page: 609--611
publication: Testbeds and Research Infrastructures. Development of Networks and Communities
- 6th International ICST Conference, TridentCom 2010, Berlin, Germany, May 18-20,
2010, Revised Selected Papers
status: public
title: Prototyping with the Future Internet Toolbox
type: conference
user_id: '15572'
year: '2010'
...
---
_id: '6154'
author:
- first_name: C
full_name: Schwens, C
last_name: Schwens
- first_name: Holger
full_name: Steinmetz, Holger
id: '43261'
last_name: Steinmetz
- first_name: Rüdiger
full_name: Kabst, Rüdiger
id: '42362'
last_name: Kabst
citation:
ama: 'Schwens C, Steinmetz H, Kabst R. Growth and Internationalization of Renewable
Energy and New Technology-Based Firms. In: Gerybadze A, Hommel U, Reiner HW, Thomaschweski
D, eds. Innovation and International Corporate Growth. Berlin/Heidelberg:
Springer; 2010.'
apa: 'Schwens, C., Steinmetz, H., & Kabst, R. (2010). Growth and Internationalization
of Renewable Energy and New Technology-Based Firms. In A. Gerybadze, U. Hommel,
H. W. Reiner, & D. Thomaschweski (Eds.), Innovation and International Corporate
Growth. Berlin/Heidelberg: Springer.'
bibtex: '@inbook{Schwens_Steinmetz_Kabst_2010, place={Berlin/Heidelberg}, title={Growth
and Internationalization of Renewable Energy and New Technology-Based Firms},
booktitle={Innovation and International Corporate Growth}, publisher={Springer},
author={Schwens, C and Steinmetz, Holger and Kabst, Rüdiger}, editor={Gerybadze,
A and Hommel, U and Reiner, H W and Thomaschweski, DEditors}, year={2010} }'
chicago: 'Schwens, C, Holger Steinmetz, and Rüdiger Kabst. “Growth and Internationalization
of Renewable Energy and New Technology-Based Firms.” In Innovation and International
Corporate Growth, edited by A Gerybadze, U Hommel, H W Reiner, and D Thomaschweski.
Berlin/Heidelberg: Springer, 2010.'
ieee: 'C. Schwens, H. Steinmetz, and R. Kabst, “Growth and Internationalization
of Renewable Energy and New Technology-Based Firms,” in Innovation and International
Corporate Growth, A. Gerybadze, U. Hommel, H. W. Reiner, and D. Thomaschweski,
Eds. Berlin/Heidelberg: Springer, 2010.'
mla: Schwens, C., et al. “Growth and Internationalization of Renewable Energy and
New Technology-Based Firms.” Innovation and International Corporate Growth,
edited by A Gerybadze et al., Springer, 2010.
short: 'C. Schwens, H. Steinmetz, R. Kabst, in: A. Gerybadze, U. Hommel, H.W. Reiner,
D. Thomaschweski (Eds.), Innovation and International Corporate Growth, Springer,
Berlin/Heidelberg, 2010.'
date_created: 2018-12-11T11:45:21Z
date_updated: 2022-01-06T07:02:54Z
department:
- _id: '274'
editor:
- first_name: A
full_name: Gerybadze, A
last_name: Gerybadze
- first_name: U
full_name: Hommel, U
last_name: Hommel
- first_name: H W
full_name: Reiner, H W
last_name: Reiner
- first_name: D
full_name: Thomaschweski, D
last_name: Thomaschweski
language:
- iso: eng
place: Berlin/Heidelberg
publication: Innovation and International Corporate Growth
publisher: Springer
status: public
title: Growth and Internationalization of Renewable Energy and New Technology-Based
Firms
type: book_chapter
user_id: '46632'
year: '2010'
...
---
_id: '4549'
abstract:
- lang: eng
text: Damage caused by laser irradiation on the surface of ZnTe epilayers was studied
by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up
to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant
micro-Raman spectra at room temperature. Discrepancies in the literature regarding
the origin of two features observed at low frequencies around 120 and 140 cm−1
in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were
not detected by using a low excitation laser power density on a Zn-terminated
ZnTe surface; however, with the increase of the laser power density they were
found to arise irreversibly. The correspondence of these peaks in a wave number
with the strongest Raman peaks of the crystalline tellurium phase and the intensity
enhancement behavior with the laser power in a similar way as for CdTe strongly
suggests the formation of crystalline tellurium aggregates on the layer surface
due to laser irradiation damage. AFM data reveal the occurrence of laser ablation
on the ZnTe surface even though the surface temperature of the sample is below
the melting point.
article_number: '075003'
article_type: original
author:
- first_name: E M
full_name: Larramendi, E M
last_name: Larramendi
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: V
full_name: Wiedemeier, V
last_name: Wiedemeier
- first_name: K-P
full_name: Hüsch, K-P
last_name: Hüsch
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: U
full_name: Woggon, U
last_name: Woggon
- first_name: E
full_name: Tschumak, E
last_name: Tschumak
- first_name: K
full_name: Lischka, K
last_name: Lischka
- first_name: D
full_name: Schikora, D
last_name: Schikora
citation:
ama: Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman
modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology.
2010;25(7). doi:10.1088/0268-1242/25/7/075003
apa: Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon,
U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage
in ZnTe epilayers. Semiconductor Science and Technology, 25(7).
https://doi.org/10.1088/0268-1242/25/7/075003
bibtex: '@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010,
title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers},
volume={25}, DOI={10.1088/0268-1242/25/7/075003},
number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and
Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and
Schikora, D}, year={2010} }'
chicago: Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner,
U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te
Raman Modes by Laser Damage in ZnTe Epilayers.” Semiconductor Science and Technology
25, no. 7 (2010). https://doi.org/10.1088/0268-1242/25/7/075003.
ieee: E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by
laser damage in ZnTe epilayers,” Semiconductor Science and Technology,
vol. 25, no. 7, 2010.
mla: Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser
Damage in ZnTe Epilayers.” Semiconductor Science and Technology, vol. 25,
no. 7, 075003, IOP Publishing, 2010, doi:10.1088/0268-1242/25/7/075003.
short: E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon,
E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25
(2010).
date_created: 2018-09-20T12:35:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0268-1242/25/7/075003
intvolume: ' 25'
issue: '7'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
type: journal_article
user_id: '49428'
volume: 25
year: '2010'
...
---
_id: '4550'
abstract:
- lang: eng
text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled
molecular beam epitaxial growth into the intrinsic region of a p-i-n junction
diode. This is achieved using an in situ combination of focused ion beam prepatterning,
annealing, and overgrowth, resulting in arrays of individually electrically addressable
(In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence
spectroscopy we demonstrate that these QDs have the same optical quality as optically
pumped Stranski–Krastanov QDs with random nucleation located in proximity to a
doped interface. The results suggest that this technique is scalable and highly
interesting for different applications in quantum devices.
article_number: '143101'
article_type: original
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur
Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot
in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no.
14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2018-09-20T12:38:51Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '20798'
volume: 97
year: '2010'
...
---
_id: '4551'
abstract:
- lang: eng
text: An intentional positioning of optically active quantum dots using site-selective
growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB)
implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated.
A square array of periodic holes on GaAs substrate was fabricated with FIB of
30 keV ions followed by an in situ annealing step. Subsequently, the patterned
holes were overgrown with an optimized amount of InAs in order to achieve site-selective
growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity
of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter,
carrier injection and subsequent radiative recombination from the positioned InAs/GaAs
self-assembled QDs was investigated by embedding the QDs in the intrinsic part
of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77
K show interband transitions up to the fifth excited state from the QDs.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Alexander
full_name: Melnikov, Alexander
last_name: Melnikov
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Tim
full_name: Baumgarten, Tim
last_name: Baumgarten
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: 'Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-dimensional Systems and Nanostructures. 2010;42(10):2749-2752. doi:10.1016/j.physe.2009.12.053'
apa: 'Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos,
S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-Dimensional Systems and Nanostructures, 42(10), 2749–2752. https://doi.org/10.1016/j.physe.2009.12.053'
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010,
title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode}, volume={42}, DOI={10.1016/j.physe.2009.12.053},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov,
Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten,
Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }'
chicago: 'Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen
Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally
Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction
Diode.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10
(2010): 2749–52. https://doi.org/10.1016/j.physe.2009.12.053.'
ieee: 'M. Mehta et al., “Intentionally positioned self-assembled InAs quantum
dots in an electroluminescent p–i–n junction diode,” Physica E: Low-dimensional
Systems and Nanostructures, vol. 42, no. 10, pp. 2749–2752, 2010.'
mla: 'Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum
Dots in an Electroluminescent p–i–n Junction Diode.” Physica E: Low-Dimensional
Systems and Nanostructures, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52,
doi:10.1016/j.physe.2009.12.053.'
short: 'M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos,
T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures
42 (2010) 2749–2752.'
date_created: 2018-09-20T12:42:40Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1016/j.physe.2009.12.053
intvolume: ' 42'
issue: '10'
keyword:
- Molecular beam epitaxy
- Focused ion beam
- Self-assembled quantum dot
- Electroluminescence
language:
- iso: eng
page: 2749-2752
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode
type: journal_article
user_id: '20798'
volume: 42
year: '2010'
...
---
_id: '9750'
author:
- first_name: D.
full_name: Hess, D.
last_name: Hess
- first_name: Thorsten
full_name: Hüfner, Thorsten
last_name: Hüfner
- first_name: Tobias
full_name: Hesse, Tobias
last_name: Hesse
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Thomas
full_name: Sattel, Thomas
last_name: Sattel
citation:
ama: Hess D, Hüfner T, Hesse T, Sondermann-Wölke C, Sattel T. Intelligente mechatronische
Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen. Internationales
Mechatronik-Kolloquium “Mechatronik 2010.” 2010.
apa: Hess, D., Hüfner, T., Hesse, T., Sondermann-Wölke, C., & Sattel, T. (2010).
Intelligente mechatronische Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen.
Internationales Mechatronik-Kolloquium “Mechatronik 2010.”
bibtex: '@article{Hess_Hüfner_Hesse_Sondermann-Wölke_Sattel_2010, title={Intelligente
mechatronische Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen},
journal={Internationales Mechatronik-Kolloquium “Mechatronik 2010”}, author={Hess,
D. and Hüfner, Thorsten and Hesse, Tobias and Sondermann-Wölke, Christoph and
Sattel, Thomas}, year={2010} }'
chicago: Hess, D., Thorsten Hüfner, Tobias Hesse, Christoph Sondermann-Wölke, and
Thomas Sattel. “Intelligente Mechatronische Systeme Zur Automatisierten Fahrzeugführung
in Fahrerassistenzsystemen.” Internationales Mechatronik-Kolloquium “Mechatronik
2010,” 2010.
ieee: D. Hess, T. Hüfner, T. Hesse, C. Sondermann-Wölke, and T. Sattel, “Intelligente
mechatronische Systeme zur automatisierten Fahrzeugführung in Fahrerassistenzsystemen,”
Internationales Mechatronik-Kolloquium “Mechatronik 2010,” 2010.
mla: Hess, D., et al. “Intelligente Mechatronische Systeme Zur Automatisierten Fahrzeugführung
in Fahrerassistenzsystemen.” Internationales Mechatronik-Kolloquium “Mechatronik
2010,” 2010.
short: D. Hess, T. Hüfner, T. Hesse, C. Sondermann-Wölke, T. Sattel, Internationales
Mechatronik-Kolloquium “Mechatronik 2010” (2010).
date_created: 2019-05-13T09:58:41Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
language:
- iso: eng
publication: Internationales Mechatronik-Kolloquium "Mechatronik 2010"
status: public
title: Intelligente mechatronische Systeme zur automatisierten Fahrzeugführung in
Fahrerassistenzsystemen
type: journal_article
user_id: '55222'
year: '2010'
...
---
_id: '9758'
abstract:
- lang: eng
text: As a lead-free piezoelectric ceramics, (K,Na)NbO$_{3}$ is a promising material
because of its good piezoelectric properties. In this study, (K$_{1-x}$Na$_{x}$)NbO$_{3}$
ceramics were synthesized from a KNbO$_{3}$ and NaNbO$_{3}$ mixture powder prepared
by the hydrothermal reaction. The hydrothermal reaction enables the production
of high quality powder for the ceramics fabrication process. To obtain (K$_{1-x}$Na$_{x}$)NbO$_{3}$
ceramics, these two powders KNbO$_{3}$ and NaNbO$_{3}$ were mixed and then sintered
together. X-Ray diffraction analysis revealed that the solid solution ceramics
(K$_{1-x}$Na$_{x}$)NbO$_{3}$ was produced by the sintering process. The K/Na ratio
in (K$_{1-x}$Na$_{x}$)NbO$_{3}$ ceramics was optimized for the best piezoelectric
properties. The optimized forms was (K$_{0.48}$Na$_{0.52}$)NbO$_{3}$, which showed
the following piezoelectric properties; k$_{33}$=0.56, d$_{33}$=114pC/N. In addition,
the ferroelectric properties, P$_{r}$=7.72mC/cm$^{2}$, E$_{c}$=857V/mm, and the
Curie temperature T$_{c}$=420$_{o}$C were also measured.
author:
- first_name: Takafumi
full_name: Maeda, Takafumi
last_name: Maeda
- first_name: Norihito
full_name: Takiguchi, Norihito
last_name: Takiguchi
- first_name: Takeshi
full_name: Morita, Takeshi
last_name: Morita
- first_name: Mutsuo
full_name: Ishikawa, Mutsuo
last_name: Ishikawa
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
citation:
ama: Maeda T, Takiguchi N, Morita T, Ishikawa M, Hemsel T. Hydrothermal (K1-xNax)NbO3
Lead-free Piezoelectric Ceramics. Journal of Korean Physical Society. 2010;57(4):924-928.
doi:10.3938/jkps.57.924
apa: Maeda, T., Takiguchi, N., Morita, T., Ishikawa, M., & Hemsel, T. (2010).
Hydrothermal (K1-xNax)NbO3 Lead-free Piezoelectric Ceramics. Journal of Korean
Physical Society, 57(4), 924–928. https://doi.org/10.3938/jkps.57.924
bibtex: '@article{Maeda_Takiguchi_Morita_Ishikawa_Hemsel_2010, title={Hydrothermal
(K1-xNax)NbO3 Lead-free Piezoelectric Ceramics}, volume={57}, DOI={10.3938/jkps.57.924},
number={4}, journal={Journal of Korean Physical Society}, author={Maeda, Takafumi
and Takiguchi, Norihito and Morita, Takeshi and Ishikawa, Mutsuo and Hemsel, Tobias},
year={2010}, pages={924–928} }'
chicago: 'Maeda, Takafumi, Norihito Takiguchi, Takeshi Morita, Mutsuo Ishikawa,
and Tobias Hemsel. “Hydrothermal (K1-XNax)NbO3 Lead-Free Piezoelectric Ceramics.”
Journal of Korean Physical Society 57, no. 4 (2010): 924–28. https://doi.org/10.3938/jkps.57.924.'
ieee: T. Maeda, N. Takiguchi, T. Morita, M. Ishikawa, and T. Hemsel, “Hydrothermal
(K1-xNax)NbO3 Lead-free Piezoelectric Ceramics,” Journal of Korean Physical
Society, vol. 57, no. 4, pp. 924–928, 2010.
mla: Maeda, Takafumi, et al. “Hydrothermal (K1-XNax)NbO3 Lead-Free Piezoelectric
Ceramics.” Journal of Korean Physical Society, vol. 57, no. 4, 2010, pp.
924–28, doi:10.3938/jkps.57.924.
short: T. Maeda, N. Takiguchi, T. Morita, M. Ishikawa, T. Hemsel, Journal of Korean
Physical Society 57 (2010) 924–928.
date_created: 2019-05-13T10:19:43Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
doi: 10.3938/jkps.57.924
intvolume: ' 57'
issue: '4'
keyword:
- Lead-free piezoelectric material
- KNN
- Hydrothermal method
language:
- iso: eng
page: 924-928
publication: Journal of Korean Physical Society
publication_identifier:
issn:
- 1948-5719
quality_controlled: '1'
status: public
title: Hydrothermal (K1-xNax)NbO3 Lead-free Piezoelectric Ceramics
type: journal_article
user_id: '55222'
volume: 57
year: '2010'
...
---
_id: '9759'
abstract:
- lang: eng
text: Among various lead-free piezoelectric materials, (K,Na)NbO$_{3}$ is a very
promising candidate. In this study, (K,Na)NbO$_{3}$ ceramics were sintered from
mixed (K,Na)NbO$_{3}$ and NaNbO$_{3}$ powders prepared by hydrothermal reaction.
These two powders were mixed with distilled water in a KNbO$_{3}$/NaNbO$_{3}$
molar ratio of 1. After sintering the mixed powder, the solid solution of (Na,K)NbO$_{3}$
ceramics was obtained. The electrical properties such as the electromechanical
coupling factors k$_{p}$ and k$_{33}$, the mechanical quality factor, Q$_{m}$,
and the piezoelectric constant d$_{33}$ of the sintered (K,Na)NbO$_{3}$ ceramics
were 0.32, 0.48, 71 (radial mode), 118 ((33)mode), and 107 pC/N, respectively.
author:
- first_name: Takafumi
full_name: Maeda, Takafumi
last_name: Maeda
- first_name: Norihito
full_name: Takiguchi, Norihito
last_name: Takiguchi
- first_name: Takeshi
full_name: Morita, Takeshi
last_name: Morita
- first_name: Mutsuo
full_name: Ishikawa, Mutsuo
last_name: Ishikawa
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
citation:
ama: Maeda T, Takiguchi N, Morita T, Ishikawa M, Hemsel T. (K,Na)NbO3 lead-free
piezoelectric ceramics synthesized from hydrothermal powders. Materials Letters.
2010;64(2):125-128. doi:10.1016/j.matlet.2009.10.012
apa: Maeda, T., Takiguchi, N., Morita, T., Ishikawa, M., & Hemsel, T. (2010).
(K,Na)NbO3 lead-free piezoelectric ceramics synthesized from hydrothermal powders.
Materials Letters, 64(2), 125–128. https://doi.org/10.1016/j.matlet.2009.10.012
bibtex: '@article{Maeda_Takiguchi_Morita_Ishikawa_Hemsel_2010, title={(K,Na)NbO3
lead-free piezoelectric ceramics synthesized from hydrothermal powders}, volume={64},
DOI={10.1016/j.matlet.2009.10.012},
number={2}, journal={Materials Letters}, author={Maeda, Takafumi and Takiguchi,
Norihito and Morita, Takeshi and Ishikawa, Mutsuo and Hemsel, Tobias}, year={2010},
pages={125–128} }'
chicago: 'Maeda, Takafumi, Norihito Takiguchi, Takeshi Morita, Mutsuo Ishikawa,
and Tobias Hemsel. “(K,Na)NbO3 Lead-Free Piezoelectric Ceramics Synthesized from
Hydrothermal Powders.” Materials Letters 64, no. 2 (2010): 125–28. https://doi.org/10.1016/j.matlet.2009.10.012.'
ieee: T. Maeda, N. Takiguchi, T. Morita, M. Ishikawa, and T. Hemsel, “(K,Na)NbO3
lead-free piezoelectric ceramics synthesized from hydrothermal powders,” Materials
Letters, vol. 64, no. 2, pp. 125–128, 2010.
mla: Maeda, Takafumi, et al. “(K,Na)NbO3 Lead-Free Piezoelectric Ceramics Synthesized
from Hydrothermal Powders.” Materials Letters, vol. 64, no. 2, 2010, pp.
125–28, doi:10.1016/j.matlet.2009.10.012.
short: T. Maeda, N. Takiguchi, T. Morita, M. Ishikawa, T. Hemsel, Materials Letters
64 (2010) 125–128.
date_created: 2019-05-13T10:21:17Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
doi: 10.1016/j.matlet.2009.10.012
intvolume: ' 64'
issue: '2'
keyword:
- Lead-free piezoelectric material
- (K
- Na)NbO$_{3}$ ceramics
- Sintering solid solution
- Piezoelectric properties
language:
- iso: eng
page: 125-128
publication: Materials Letters
publication_identifier:
issn:
- 1948-5719
quality_controlled: '1'
status: public
title: (K,Na)NbO3 lead-free piezoelectric ceramics synthesized from hydrothermal powders
type: journal_article
user_id: '55222'
volume: 64
year: '2010'
...
---
_id: '4153'
abstract:
- lang: eng
text: Nanosphere lithography (NSL) masks consisting of mono- or double-layers of
polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization
of PS particles during the controlled drying of a colloidal suspension on a surface.
The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma
are studied as a function of initial sphere size, plasma power and treatment time.
The influence of several experimental parameters, including the plasma induced
temperature rise, are analysed using scanning and transmission electron microscopy.
It is demonstrated that a variety of new intriguing nanopatterns can be generated
on silicon surfaces by the combination of NSL and plasma techniques, largely broadening
the variety of patterns available so far by NSL.
article_type: original
author:
- first_name: D.
full_name: Gogel, D.
last_name: Gogel
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere
lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS AND
ADVANCED MATERIALS. 2010;12(3):740-744.
apa: Gogel, D., Weinl, M., Lindner, J., & Stritzker, B. (2010). Plasma modification
of nanosphere lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, 12(3), 740–744.
bibtex: '@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification
of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D.
and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744}
}'
chicago: 'Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification
of Nanosphere Lithography Masks Made of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12, no. 3 (2010): 740–44.'
ieee: D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of
nanosphere lithography masks made of polystyrene beads,” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, vol. 12, no. 3, pp. 740–744, 2010.
mla: Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made
of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,
vol. 12, no. 3, 2010, pp. 740–44.
short: D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12 (2010) 740–744.
date_created: 2018-08-27T13:29:28Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '286'
- _id: '230'
intvolume: ' 12'
issue: '3'
language:
- iso: eng
page: 740-744
publication: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
status: public
title: Plasma modification of nanosphere lithography masks made of polystyrene beads
type: journal_article
user_id: '55706'
volume: 12
year: '2010'
...
---
_id: '4200'
abstract:
- lang: eng
text: "We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due
to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a
special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated
by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers,
the composition of the alloy, and the quality of interfaces were controlled by
Rutherford backscattering\r\nspectrometry, high-resolution transmission electron
microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic
alloy layer were characterized with superconducting quantum interference\r\ndevice
magnetometry. These studies yield precise information about the thickness and
demonstrate the homogeneity\r\nof the alloy composition and magnetic properties
along the sample series. The dependencies of the\r\ncritical temperature on the
Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for
constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting
layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F
predicted by the theory could be realized experimentally, from\r\nreentrant superconducting
behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith
a shallow minimum. Even a double extinction of superconductivity was observed,
giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All
critical temperature curves were fitted with suitable sets of\r\nparameters. Then,
T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch
core\r\nstructure were calculated using these parameters. Finally, superconducting
spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved
results."
article_number: '054517'
article_type: original
author:
- first_name: V. I.
full_name: Zdravkov, V. I.
last_name: Zdravkov
- first_name: J.
full_name: Kehrle, J.
last_name: Kehrle
- first_name: G.
full_name: Obermeier, G.
last_name: Obermeier
- first_name: S.
full_name: Gsell, S.
last_name: Gsell
- first_name: M.
full_name: Schreck, M.
last_name: Schreck
- first_name: C.
full_name: Müller, C.
last_name: Müller
- first_name: H.-A.
full_name: Krug von Nidda, H.-A.
last_name: Krug von Nidda
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: J.
full_name: Moosburger-Will, J.
last_name: Moosburger-Will
- first_name: E.
full_name: Nold, E.
last_name: Nold
- first_name: R.
full_name: Morari, R.
last_name: Morari
- first_name: V. V.
full_name: Ryazanov, V. V.
last_name: Ryazanov
- first_name: A. S.
full_name: Sidorenko, A. S.
last_name: Sidorenko
- first_name: S.
full_name: Horn, S.
last_name: Horn
- first_name: R.
full_name: Tidecks, R.
last_name: Tidecks
- first_name: L. R.
full_name: Tagirov, L. R.
last_name: Tagirov
citation:
ama: Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers. Physical Review B. 2010;82(5). doi:10.1103/physrevb.82.054517
apa: Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller,
C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers. Physical Review B, 82(5). https://doi.org/10.1103/physrevb.82.054517
bibtex: '@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et
al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers}, volume={82}, DOI={10.1103/physrevb.82.054517},
number={5054517}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S.
and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and
Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }'
chicago: Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller,
H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy
Bilayers.” Physical Review B 82, no. 5 (2010). https://doi.org/10.1103/physrevb.82.054517.
ieee: V. I. Zdravkov et al., “Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers,” Physical Review B, vol. 82, no. 5, 2010.
mla: Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy
Bilayers.” Physical Review B, vol. 82, no. 5, 054517, American Physical
Society (APS), 2010, doi:10.1103/physrevb.82.054517.
short: V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller,
H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V.
Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B
82 (2010).
date_created: 2018-08-28T12:22:11Z
date_updated: 2022-01-06T07:00:34Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physrevb.82.054517
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:23:29Z
date_updated: 2018-08-28T12:23:29Z
file_id: '4201'
file_name: Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf
file_size: 723266
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:23:29Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '5'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers
type: journal_article
user_id: '55706'
volume: 82
year: '2010'
...
---
_id: '4202'
abstract:
- lang: eng
text: "Unintentional doping in nonpolar a-plane \x01112¯0\x02 gallium nitride \x01GaN\x02
grown on r-plane \x0111¯02\x02\r\nsapphire using a three-dimensional \x013D\x02–two-dimensional
\x012D\x02 growth method has been\r\ncharacterized. For both 2D only and 3D–2D
growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire
interface is observed by scanning capacitance microscopy \x01SCM\x02. The\r\naverage
width of this unintentionally doped layer is found to increase with increasing
3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure
for calibration, it is shown that the\r\nunintentionally doped region has an average
carrier concentration of \x012.5\x010.3\x02\x021018 cm−3. SCM\r\nalso reveals
the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface.
The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface
along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion
from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission
peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking
faults\r\n\x01BSFs\x02 and prismatic stacking faults \x01PSFs\x02, respectively.
It is shown that the inclined features\r\nextending from the GaN/sapphire interface
exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional
doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material
their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission
electron microscopy confirms the presence of PSFs extending through the film at
60°\r\nfrom the GaN/sapphire interface."
article_number: '023503'
article_type: original
author:
- first_name: Tongtong
full_name: Zhu, Tongtong
last_name: Zhu
- first_name: Carol F.
full_name: Johnston, Carol F.
last_name: Johnston
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Menno J.
full_name: Kappers, Menno J.
last_name: Kappers
- first_name: Rachel A.
full_name: Oliver, Rachel A.
last_name: Oliver
citation:
ama: Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of
unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2).
doi:10.1063/1.3284944
apa: Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., & Oliver, R. A.
(2010). Characterization of unintentional doping in nonpolar GaN. Journal of
Applied Physics, 107(2). https://doi.org/10.1063/1.3284944
bibtex: '@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization
of unintentional doping in nonpolar GaN}, volume={107}, DOI={10.1063/1.3284944},
number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno
J. and Oliver, Rachel A.}, year={2010} }'
chicago: Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and
Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.”
Journal of Applied Physics 107, no. 2 (2010). https://doi.org/10.1063/1.3284944.
ieee: T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization
of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol.
107, no. 2, 2010.
mla: Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar
GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing,
2010, doi:10.1063/1.3284944.
short: T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of
Applied Physics 107 (2010).
date_created: 2018-08-28T12:27:34Z
date_updated: 2022-01-06T07:00:34Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1063/1.3284944
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:28:22Z
date_updated: 2018-08-28T12:28:22Z
file_id: '4203'
file_name: Characterization of unintentional doping in nonpolar GaN.pdf
file_size: 688753
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:28:22Z
has_accepted_license: '1'
intvolume: ' 107'
issue: '2'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Characterization of unintentional doping in nonpolar GaN
type: journal_article
user_id: '55706'
volume: 107
year: '2010'
...
---
_id: '4207'
citation:
ama: Ila D, Kishimoto N, Lindner J, Baglin J, eds. Ion Beams and Nano-Engineering.
Vol 1181. MRS Symposium Proceedings ; 2010.
apa: 'Ila, D., Kishimoto, N., Lindner, J., & Baglin, J. (Eds.). (2010). Ion
Beams and Nano-Engineering (Vol. 1181). Presented at the MRS Spring Meeting
2009, San Francisco (USA): MRS Symposium Proceedings .'
bibtex: '@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering},
volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }'
chicago: Ila, D., N. Kishimoto, Jörg Lindner, and J. Baglin, eds. Ion Beams
and Nano-Engineering. Vol. 1181. MRS Symposium Proceedings , 2010.
ieee: D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., Ion Beams and Nano-Engineering,
vol. 1181. MRS Symposium Proceedings , 2010.
mla: Ila, D., et al., editors. Ion Beams and Nano-Engineering. Vol. 1181,
MRS Symposium Proceedings , 2010.
short: D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering,
MRS Symposium Proceedings , 2010.
conference:
location: San Francisco (USA)
name: MRS Spring Meeting 2009
date_created: 2018-08-28T12:38:16Z
date_updated: 2022-01-06T07:00:35Z
department:
- _id: '15'
- _id: '286'
editor:
- first_name: D.
full_name: Ila, D.
last_name: Ila
- first_name: 'N. '
full_name: 'Kishimoto, N. '
last_name: Kishimoto
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: J.
full_name: Baglin, J.
last_name: Baglin
intvolume: ' 1181'
language:
- iso: eng
publication_identifier:
isbn:
- 978-1-60511-154-4
publication_status: published
publisher: 'MRS Symposium Proceedings '
status: public
title: Ion Beams and Nano-Engineering
type: book_editor
user_id: '55706'
volume: 1181
year: '2010'
...