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Temperature-aware thread mapping strategies are key for providing dependability in such systems. These strategies rely on measuring the temperature distribution and redicting the thermal behavior of the system when there are changes to the hardware and software running on the FPGA. While there are a number of tools that use thermal models to predict temperature distributions at design time, these tools lack the flexibility to autonomously adjust to changing FPGA configurations. To address this problem we propose a temperature-aware system that empowers FPGA-based reconfigurable multi-cores to autonomously predict the on-chip temperature distribution for pro-active thread remapping. Our system obtains temperature measurements through a self-calibrating grid of sensors and uses area constrained heat-generating circuits in order to generate spatial and temporal temperature gradients. The generated temperature variations are then used to learn the free parameters of the system's thermal model. The system thus acquires an understanding of its own thermal characteristics. We implemented an FPGA system containing a net of 144 temperature sensors on a Xilinx Virtex-6 LX240T FPGA that is aware of its thermal model. Finally, we show that the temperature predictions vary less than 0.72 degree C on average compared to the measured temperature distributions at run-time.","lang":"eng"}],"has_accepted_license":"1","doi":"10.1109/ReConFig.2011.59","page":"55-60","quality_controlled":"1","publication":"Proceedings of the 2011 International Conference on Reconfigurable Computing and FPGAs (ReConFig)","ddc":["040"],"type":"conference","citation":{"short":"M. Happe, A. Agne, C. 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Methane adsorption on graphene from first principles including dispersion interaction. <i>Surface Science</i>, <i>605</i>, 746–749. <a href=\"https://doi.org/10.1016/j.susc.2011.01.012\">https://doi.org/10.1016/j.susc.2011.01.012</a>"},"user_id":"16199","publication_status":"published","department":[{"_id":"15"},{"_id":"295"},{"_id":"170"},{"_id":"35"},{"_id":"230"},{"_id":"27"}]},{"language":[{"iso":"eng"}],"year":"2011","publication_identifier":{"issn":["1098-0121","1550-235X"]},"type":"journal_article","status":"public","date_created":"2019-10-01T09:01:58Z","publication":"Physical Review B","issue":"11","date_updated":"2025-12-05T10:43:19Z","_id":"13563","volume":84,"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"doi":"10.1103/physrevb.84.115416","intvolume":"        84","title":"Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array","author":[{"full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","last_name":"Schmidt","id":"468","orcid":"0000-0002-2717-5076"},{"last_name":"Babilon","first_name":"M.","full_name":"Babilon, M."},{"last_name":"Thierfelder","full_name":"Thierfelder, C.","first_name":"C."},{"last_name":"Sanna","full_name":"Sanna, S.","first_name":"S."},{"last_name":"Wippermann","full_name":"Wippermann, S.","first_name":"S."}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"citation":{"apa":"Schmidt, W. G., Babilon, M., Thierfelder, C., Sanna, S., &#38; Wippermann, S. (2011). Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array. <i>Physical Review B</i>, <i>84</i>(11). <a href=\"https://doi.org/10.1103/physrevb.84.115416\">https://doi.org/10.1103/physrevb.84.115416</a>","ama":"Schmidt WG, Babilon M, Thierfelder C, Sanna S, Wippermann S. Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array. <i>Physical Review B</i>. 2011;84(11). doi:<a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>","chicago":"Schmidt, Wolf Gero, M. Babilon, C. Thierfelder, S. Sanna, and S. Wippermann. “Influence of Na Adsorption on the Quantum Conductance and Metal-Insulator Transition of the In-Si(111)(4×1)–(8×2) Nanowire Array.” <i>Physical Review B</i> 84, no. 11 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.115416\">https://doi.org/10.1103/physrevb.84.115416</a>.","ieee":"W. G. Schmidt, M. Babilon, C. Thierfelder, S. Sanna, and S. Wippermann, “Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array,” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>.","mla":"Schmidt, Wolf Gero, et al. “Influence of Na Adsorption on the Quantum Conductance and Metal-Insulator Transition of the In-Si(111)(4×1)–(8×2) Nanowire Array.” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>.","bibtex":"@article{Schmidt_Babilon_Thierfelder_Sanna_Wippermann_2011, title={Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>}, number={11}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Babilon, M. and Thierfelder, C. and Sanna, S. and Wippermann, S.}, year={2011} }","short":"W.G. Schmidt, M. Babilon, C. Thierfelder, S. Sanna, S. Wippermann, Physical Review B 84 (2011)."},"publication_status":"published","user_id":"16199"}]