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Riedl, V. Kunnathully, A. Karlisch, D. Reuter, N. Weber, C. Meier, R. Schierholz, J. Lindner, (2017).","apa":"Riedl, T., Kunnathully, V., Karlisch, A., Reuter, D., Weber, N., Meier, C., … Lindner, J. (2017). Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs. Presented at the E-MRS Spring Meeting 2017, Straßburg (France).","ama":"Riedl T, Kunnathully V, Karlisch A, et al. Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs. 2017.","ieee":"T. Riedl <i>et al.</i>, “Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs.” 2017.","chicago":"Riedl, Thomas, Vinay Kunnathully, A. Karlisch, Dirk Reuter, N. Weber, Cedrik Meier, R. Schierholz, and Jörg Lindner. “Morphology, Structure and Enhanced PL of Molecular Beam Epitaxial In0.2Ga0.8As Layers on Nanopillar Patterned GaAs.” Contributed Talk N.16.1, 2017."}},{"language":[{"iso":"eng"}],"ddc":["530"],"keyword":["tet_topic_phc","tet_topic_qd"],"file":[{"content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2018-08-13T09:20:05Z","date_created":"2018-08-13T09:20:05Z","creator":"hclaudia","file_size":1119165,"access_level":"closed","file_name":"2016-04 Blumenthal_et_al_Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots_physica_status_solidi_(c).pdf","file_id":"3889"}],"abstract":[{"text":"We successfully developed a process to fabricate freestanding cubic aluminium nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots (QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE). To realize the photonic crystal (PhC) membrane we have chosen a triangular array of holes. The array was fabricated by electron beam lithography and several steps of reactive ion etching (RIE) with the help of a hard mask and an undercut of the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL) measurements of the photonic crystals, in particular of a H1 and a L3 cavity, and the emission of the QD ensemble were performed to characterize the samples. The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000 for two different modes of the L3 cavity, respectively. The energy of the fundamental modes is in good agreement to the numerical simulations. ","lang":"eng"}],"publication":"physica status solidi (c)","title":"Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots","date_created":"2018-08-13T09:14:58Z","publisher":"Wiley","year":"2016","issue":"5-6","file_date_updated":"2018-08-13T09:20:05Z","article_type":"original","user_id":"14931","department":[{"_id":"61"},{"_id":"284"},{"_id":"290"},{"_id":"292"},{"_id":"287"},{"_id":"35"},{"_id":"230"}],"_id":"3888","status":"public","type":"journal_article","doi":"10.1002/pssc.201600010","author":[{"first_name":"Sarah","full_name":"Blumenthal, Sarah","last_name":"Blumenthal"},{"first_name":"Matthias","last_name":"Bürger","full_name":"Bürger, Matthias"},{"full_name":"Hildebrandt, Andre","last_name":"Hildebrandt","first_name":"Andre"},{"first_name":"Jens","full_name":"Förstner, Jens","id":"158","orcid":"0000-0001-7059-9862","last_name":"Förstner"},{"last_name":"Weber","full_name":"Weber, Nils","first_name":"Nils"},{"orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","full_name":"Meier, Cedrik","id":"20798","first_name":"Cedrik"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"Donat J.","orcid":"0000-0003-1121-3565","last_name":"As","full_name":"As, Donat J.","id":"14"}],"volume":13,"date_updated":"2023-10-09T09:06:08Z","citation":{"bibtex":"@article{Blumenthal_Bürger_Hildebrandt_Förstner_Weber_Meier_Reuter_As_2016, title={Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots}, volume={13}, DOI={<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>}, number={5–6}, journal={physica status solidi (c)}, publisher={Wiley}, author={Blumenthal, Sarah and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils and Meier, Cedrik and Reuter, Dirk and As, Donat J.}, year={2016}, pages={292–296} }","short":"S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier, D. Reuter, D.J. As, Physica Status Solidi (c) 13 (2016) 292–296.","mla":"Blumenthal, Sarah, et al. “Fabrication and Characterization of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.” <i>Physica Status Solidi (c)</i>, vol. 13, no. 5–6, Wiley, 2016, pp. 292–96, doi:<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>.","apa":"Blumenthal, S., Bürger, M., Hildebrandt, A., Förstner, J., Weber, N., Meier, C., Reuter, D., &#38; As, D. J. (2016). Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. <i>Physica Status Solidi (c)</i>, <i>13</i>(5–6), 292–296. <a href=\"https://doi.org/10.1002/pssc.201600010\">https://doi.org/10.1002/pssc.201600010</a>","ama":"Blumenthal S, Bürger M, Hildebrandt A, et al. Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. <i>physica status solidi (c)</i>. 2016;13(5-6):292-296. doi:<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>","ieee":"S. Blumenthal <i>et al.</i>, “Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,” <i>physica status solidi (c)</i>, vol. 13, no. 5–6, pp. 292–296, 2016, doi: <a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>.","chicago":"Blumenthal, Sarah, Matthias Bürger, Andre Hildebrandt, Jens Förstner, Nils Weber, Cedrik Meier, Dirk Reuter, and Donat J. As. “Fabrication and Characterization of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.” <i>Physica Status Solidi (c)</i> 13, no. 5–6 (2016): 292–96. <a href=\"https://doi.org/10.1002/pssc.201600010\">https://doi.org/10.1002/pssc.201600010</a>."},"page":"292-296","intvolume":"        13","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"has_accepted_license":"1"},{"year":"2016","issue":"1","title":"Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots","publisher":"Springer Nature","date_created":"2018-08-29T08:35:10Z","abstract":[{"lang":"eng","text":"Spins in semiconductor quantum dots have been considered as prospective quantum bit excitations. Their coupling to the crystal environment manifests itself in a limitation of the spin coherence times to the microsecond range, both for electron and hole spins. This rather short-lived coherence compared to atomic states asks for manipulations on timescales as short as possible. Due to the huge dipole moment for transitions between the valence and conduction band, pulsed laser systems offer the possibility to perform manipulations within picoseconds or even faster. Here, we report on results that show the potential of optical spin manipulations with currently available pulsed laser systems. Using picosecond laser pulses, we demonstrate optically induced spin rotations of electron and hole spins. We further realize the optical decoupling of the hole spins from the nuclear surrounding at the nanosecond timescales and demonstrate an all-optical spin tomography for interacting electron spin sub-ensembles."}],"publication":"Applied Physics B","keyword":["Spin Polarization","Pump Pulse","Trion","Spin Component","Coherence Time"],"language":[{"iso":"eng"}],"intvolume":"       122","citation":{"short":"S. Varwig, E. Evers, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, T. Meier, A. Zrenner, M. Bayer, Applied Physics B 122 (2016).","mla":"Varwig, S., et al. “Advanced Optical Manipulation of Carrier Spins in (In,Ga)As Quantum Dots.” <i>Applied Physics B</i>, vol. 122, no. 1, 17, Springer Nature, 2016, doi:<a href=\"https://doi.org/10.1007/s00340-015-6274-y\">10.1007/s00340-015-6274-y</a>.","bibtex":"@article{Varwig_Evers_Greilich_Yakovlev_Reuter_Wieck_Meier_Zrenner_Bayer_2016, title={Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots}, volume={122}, DOI={<a href=\"https://doi.org/10.1007/s00340-015-6274-y\">10.1007/s00340-015-6274-y</a>}, number={117}, journal={Applied Physics B}, publisher={Springer Nature}, author={Varwig, S. and Evers, E. and Greilich, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Meier, Torsten and Zrenner, Artur and Bayer, M.}, year={2016} }","apa":"Varwig, S., Evers, E., Greilich, A., Yakovlev, D. R., Reuter, D., Wieck, A. D., Meier, T., Zrenner, A., &#38; Bayer, M. (2016). Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots. <i>Applied Physics B</i>, <i>122</i>(1), Article 17. <a href=\"https://doi.org/10.1007/s00340-015-6274-y\">https://doi.org/10.1007/s00340-015-6274-y</a>","ama":"Varwig S, Evers E, Greilich A, et al. Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots. <i>Applied Physics B</i>. 2016;122(1). doi:<a href=\"https://doi.org/10.1007/s00340-015-6274-y\">10.1007/s00340-015-6274-y</a>","ieee":"S. Varwig <i>et al.</i>, “Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots,” <i>Applied Physics B</i>, vol. 122, no. 1, Art. no. 17, 2016, doi: <a href=\"https://doi.org/10.1007/s00340-015-6274-y\">10.1007/s00340-015-6274-y</a>.","chicago":"Varwig, S., E. Evers, A. Greilich, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, Torsten Meier, Artur Zrenner, and M. Bayer. “Advanced Optical Manipulation of Carrier Spins in (In,Ga)As Quantum Dots.” <i>Applied Physics B</i> 122, no. 1 (2016). <a href=\"https://doi.org/10.1007/s00340-015-6274-y\">https://doi.org/10.1007/s00340-015-6274-y</a>."},"publication_identifier":{"issn":["0946-2171","1432-0649"]},"publication_status":"published","doi":"10.1007/s00340-015-6274-y","date_updated":"2025-12-16T16:44:01Z","volume":122,"author":[{"first_name":"S.","last_name":"Varwig","full_name":"Varwig, S."},{"first_name":"E.","full_name":"Evers, E.","last_name":"Evers"},{"first_name":"A.","last_name":"Greilich","full_name":"Greilich, A."},{"full_name":"Yakovlev, D. R.","last_name":"Yakovlev","first_name":"D. R."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"Torsten","full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"first_name":"Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","id":"606","full_name":"Zrenner, Artur"},{"first_name":"M.","last_name":"Bayer","full_name":"Bayer, M."}],"status":"public","type":"journal_article","article_type":"original","article_number":"17","_id":"4246","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"170"},{"_id":"293"},{"_id":"292"},{"_id":"35"},{"_id":"290"}],"user_id":"16199"},{"publication":"Scientific Reports","abstract":[{"text":"The coherent state preparation and control of single quantum systems is an important prerequisite for the implementation of functional quantum devices. Prominent examples for such systems are semiconductor quantum dots, which exhibit a fine structure split single exciton state and a V-type three level structure, given by a common ground state and two distinguishable and separately excitable transitions. In this work we introduce a novel concept for the preparation of a robust inversion by the sequential excitation in a V-type system via distinguishable paths.","lang":"eng"}],"file":[{"relation":"main_file","content_type":"application/pdf","file_size":1089911,"file_name":"2015-05 Mantei,Förstner,Gordon,Leier,Rai,Reuter,Wieck,Zrenner_Robust Population Inversion by Polarization Selective Pulsed Excitation.pdf","file_id":"3901","access_level":"open_access","date_updated":"2018-08-21T11:37:12Z","date_created":"2018-08-13T10:39:14Z","creator":"hclaudia"}],"ddc":["530"],"keyword":["tet_topic_qd"],"language":[{"iso":"eng"}],"issue":"1","year":"2015","publisher":"Springer Nature","date_created":"2018-08-13T10:34:17Z","title":"Robust Population Inversion by Polarization Selective Pulsed Excitation","type":"journal_article","urn":"39004","status":"public","_id":"3900","user_id":"55706","department":[{"_id":"61"},{"_id":"15"},{"_id":"292"},{"_id":"290"}],"article_type":"original","file_date_updated":"2018-08-21T11:37:12Z","publication_status":"published","publication_identifier":{"issn":["2045-2322"]},"has_accepted_license":"1","citation":{"bibtex":"@article{Mantei_Förstner_Gordon_Leier_Rai_Reuter_Wieck_Zrenner_2015, title={Robust Population Inversion by Polarization Selective Pulsed Excitation}, volume={5}, DOI={<a href=\"https://doi.org/10.1038/srep10313\">10.1038/srep10313</a>}, number={1}, journal={Scientific Reports}, publisher={Springer Nature}, author={Mantei, D. and Förstner, Jens and Gordon, S. and Leier, Y. A. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Zrenner, Artur}, year={2015}, pages={10313} }","mla":"Mantei, D., et al. “Robust Population Inversion by Polarization Selective Pulsed Excitation.” <i>Scientific Reports</i>, vol. 5, no. 1, Springer Nature, 2015, p. 10313, doi:<a href=\"https://doi.org/10.1038/srep10313\">10.1038/srep10313</a>.","short":"D. Mantei, J. Förstner, S. Gordon, Y.A. Leier, A.K. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Scientific Reports 5 (2015) 10313.","apa":"Mantei, D., Förstner, J., Gordon, S., Leier, Y. A., Rai, A. K., Reuter, D., … Zrenner, A. (2015). Robust Population Inversion by Polarization Selective Pulsed Excitation. <i>Scientific Reports</i>, <i>5</i>(1), 10313. <a href=\"https://doi.org/10.1038/srep10313\">https://doi.org/10.1038/srep10313</a>","chicago":"Mantei, D., Jens Förstner, S. Gordon, Y. A. Leier, A. K. Rai, Dirk Reuter, A. D. Wieck, and Artur Zrenner. “Robust Population Inversion by Polarization Selective Pulsed Excitation.” <i>Scientific Reports</i> 5, no. 1 (2015): 10313. <a href=\"https://doi.org/10.1038/srep10313\">https://doi.org/10.1038/srep10313</a>.","ieee":"D. Mantei <i>et al.</i>, “Robust Population Inversion by Polarization Selective Pulsed Excitation,” <i>Scientific Reports</i>, vol. 5, no. 1, p. 10313, 2015.","ama":"Mantei D, Förstner J, Gordon S, et al. Robust Population Inversion by Polarization Selective Pulsed Excitation. <i>Scientific Reports</i>. 2015;5(1):10313. doi:<a href=\"https://doi.org/10.1038/srep10313\">10.1038/srep10313</a>"},"intvolume":"         5","page":"10313","date_updated":"2022-01-06T06:59:53Z","oa":"1","author":[{"last_name":"Mantei","full_name":"Mantei, D.","first_name":"D."},{"last_name":"Förstner","orcid":"0000-0001-7059-9862","id":"158","full_name":"Förstner, Jens","first_name":"Jens"},{"first_name":"S.","last_name":"Gordon","full_name":"Gordon, S."},{"full_name":"Leier, Y. A.","last_name":"Leier","first_name":"Y. A."},{"last_name":"Rai","full_name":"Rai, A. K.","first_name":"A. K."},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"last_name":"Zrenner","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","id":"606","first_name":"Artur"}],"volume":5,"doi":"10.1038/srep10313"},{"ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"text":"We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic strained cubic AlN layers on \r\n3C-SiC (001) substrates grown by means of molecular beam epitaxy. Surface morphologies of various QD sizes \r\nand densities were obtained from uncapped samples by atomic force microscopy. These results were correlated \r\nwith similar but capped samples by photoluminescence experiments. The QD density varies by one order of \r\nmagnitude from ~1x10^10 cm^-2 to ~1x10^11 cm^-2 as a function of the GaN coverage on the surface. The initial layer \r\nthickness for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers by a comparison \r\nbetween the experimental results and an analytical model. Our results reveal the strain-driven Stranski-Krastanov \r\ngrowth mode as the main formation process of the cubic GaN QDs.  ","lang":"eng"}],"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","access_level":"closed","file_id":"4025","file_name":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process.pdf","file_size":650052,"creator":"hclaudia","date_created":"2018-08-21T13:10:09Z","date_updated":"2018-08-21T13:10:09Z"}],"publication":"physica status solidi (c)","title":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process","publisher":"Wiley","date_created":"2018-08-21T13:07:35Z","year":"2015","issue":"4-5","article_type":"original","file_date_updated":"2018-08-21T13:10:09Z","_id":"4024","user_id":"42514","department":[{"_id":"286"},{"_id":"292"},{"_id":"15"}],"status":"public","type":"journal_article","doi":"10.1002/pssc.201400132","date_updated":"2022-01-06T07:00:08Z","author":[{"first_name":"M.","last_name":"Bürger","full_name":"Bürger, M."},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"As","full_name":"As, D. J.","first_name":"D. J."}],"volume":12,"citation":{"chicago":"Bürger, M., Jörg Lindner, Dirk Reuter, and D. J. As. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” <i>Physica Status Solidi (C)</i> 12, no. 4–5 (2015): 452–55. <a href=\"https://doi.org/10.1002/pssc.201400132\">https://doi.org/10.1002/pssc.201400132</a>.","ieee":"M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” <i>physica status solidi (c)</i>, vol. 12, no. 4–5, pp. 452–455, 2015.","ama":"Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. <i>physica status solidi (c)</i>. 2015;12(4-5):452-455. doi:<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>","mla":"Bürger, M., et al. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” <i>Physica Status Solidi (C)</i>, vol. 12, no. 4–5, Wiley, 2015, pp. 452–55, doi:<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>.","bibtex":"@article{Bürger_Lindner_Reuter_As_2015, title={Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process}, volume={12}, DOI={<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>}, number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Bürger, M. and Lindner, Jörg and Reuter, Dirk and As, D. J.}, year={2015}, pages={452–455} }","short":"M. Bürger, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (C) 12 (2015) 452–455.","apa":"Bürger, M., Lindner, J., Reuter, D., &#38; As, D. J. (2015). Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. <i>Physica Status Solidi (C)</i>, <i>12</i>(4–5), 452–455. <a href=\"https://doi.org/10.1002/pssc.201400132\">https://doi.org/10.1002/pssc.201400132</a>"},"page":"452-455","intvolume":"        12","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"has_accepted_license":"1"},{"citation":{"apa":"Bürger, M., Lindner, J., Reuter, D., &#38; As, D. J. (2014). Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. Presented at the European Materials Research Society Spring Meeting 2014, Lille (France).","mla":"Bürger, M., et al. <i>Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process</i>. 2014.","short":"M. Bürger, J. Lindner, D. Reuter, D.J. As, in: 2014.","bibtex":"@inproceedings{Bürger_Lindner_Reuter_As_2014, title={Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process}, author={Bürger, M. and Lindner, Jörg and Reuter, Dirk and As, D.J.}, year={2014} }","ieee":"M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” presented at the European Materials Research Society Spring Meeting 2014, Lille (France), 2014.","chicago":"Bürger, M., Jörg Lindner, Dirk Reuter, and D.J. As. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process,” 2014.","ama":"Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. In: ; 2014."},"status":"public","year":"2014","type":"conference","conference":{"location":"Lille (France)","end_date":"2014-05-30","start_date":"2014-05-26","name":"European Materials Research Society Spring Meeting 2014"},"language":[{"iso":"eng"}],"title":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process","author":[{"last_name":"Bürger","full_name":"Bürger, M.","first_name":"M."},{"full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner","first_name":"Jörg"},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"first_name":"D.J.","full_name":"As, D.J.","last_name":"As"}],"date_created":"2018-08-22T12:11:40Z","user_id":"55706","department":[{"_id":"15"},{"_id":"286"},{"_id":"292"}],"date_updated":"2022-01-06T07:00:11Z","_id":"4061"},{"year":"2013","issue":"8","title":"Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots","publisher":"AIP Publishing","date_created":"2018-08-21T07:43:22Z","abstract":[{"lang":"eng","text":"Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding microdisks were patterned by means of electron beam lithography and a two step reactive ion etching process. Micro-photoluminescence spectroscopy investigations were performed for optical characterization. We analyzed the mode spacing for disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional finite difference time domain calculations were in good agreement\r\nwith the experimental data. Whispering gallery modes of the radial orders 1 and 2 were identified by means of simulated mode field distributions."}],"file":[{"content_type":"application/pdf","relation":"main_file","date_updated":"2018-09-04T20:08:52Z","date_created":"2018-08-21T07:47:02Z","creator":"hclaudia","file_size":935911,"file_name":"2013-02 Bürger,Ruth,Declair,Förstner,Meier,As_Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots.pdf","access_level":"open_access","file_id":"3964"}],"publication":"Applied Physics Letters","keyword":["tet_topic_qd","tet_topic_microdisk"],"ddc":["530"],"language":[{"iso":"eng"}],"page":"081105","intvolume":"       102","citation":{"ama":"Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. <i>Applied Physics Letters</i>. 2013;102(8):081105. doi:<a href=\"https://doi.org/10.1063/1.4793653\">10.1063/1.4793653</a>","chicago":"Bürger, M., M. Ruth, S. Declair, Jens Förstner, Cedrik Meier, and Donat Josef As. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar GaN Quantum Dots.” <i>Applied Physics Letters</i> 102, no. 8 (2013): 081105. <a href=\"https://doi.org/10.1063/1.4793653\">https://doi.org/10.1063/1.4793653</a>.","ieee":"M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,” <i>Applied Physics Letters</i>, vol. 102, no. 8, p. 081105, 2013.","bibtex":"@article{Bürger_Ruth_Declair_Förstner_Meier_As_2013, title={Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots}, volume={102}, DOI={<a href=\"https://doi.org/10.1063/1.4793653\">10.1063/1.4793653</a>}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bürger, M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat Josef}, year={2013}, pages={081105} }","short":"M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics Letters 102 (2013) 081105.","mla":"Bürger, M., et al. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar GaN Quantum Dots.” <i>Applied Physics Letters</i>, vol. 102, no. 8, AIP Publishing, 2013, p. 081105, doi:<a href=\"https://doi.org/10.1063/1.4793653\">10.1063/1.4793653</a>.","apa":"Bürger, M., Ruth, M., Declair, S., Förstner, J., Meier, C., &#38; As, D. J. (2013). Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. <i>Applied Physics Letters</i>, <i>102</i>(8), 081105. <a href=\"https://doi.org/10.1063/1.4793653\">https://doi.org/10.1063/1.4793653</a>"},"has_accepted_license":"1","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","doi":"10.1063/1.4793653","oa":"1","date_updated":"2022-01-06T07:00:01Z","volume":102,"author":[{"full_name":"Bürger, M.","last_name":"Bürger","first_name":"M."},{"first_name":"M.","last_name":"Ruth","full_name":"Ruth, M."},{"first_name":"S.","last_name":"Declair","full_name":"Declair, S."},{"id":"158","full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens"},{"first_name":"Cedrik","id":"20798","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier"},{"first_name":"Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","full_name":"As, Donat Josef","id":"14"}],"urn":"39635","status":"public","type":"journal_article","article_type":"original","file_date_updated":"2018-09-04T20:08:52Z","_id":"3963","department":[{"_id":"15"},{"_id":"287"},{"_id":"284"},{"_id":"230"},{"_id":"35"}],"user_id":"14"},{"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"issue":"19","year":"2011","citation":{"apa":"Mietze, C., Landmann, M., Rauls, E., Machhadani, H., Sakr, S., Tchernycheva, M., Julien, F. H., Schmidt, W. G., Lischka, K., &#38; As, D. J. (2011). Band offsets in cubic GaN/AlN superlattices. <i>Physical Review B</i>, <i>83</i>(19). <a href=\"https://doi.org/10.1103/physrevb.83.195301\">https://doi.org/10.1103/physrevb.83.195301</a>","mla":"Mietze, C., et al. “Band Offsets in Cubic GaN/AlN Superlattices.” <i>Physical Review B</i>, vol. 83, no. 19, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>.","short":"C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F.H. Julien, W.G. Schmidt, K. Lischka, D.J. As, Physical Review B 83 (2011).","bibtex":"@article{Mietze_Landmann_Rauls_Machhadani_Sakr_Tchernycheva_Julien_Schmidt_Lischka_As_2011, title={Band offsets in cubic GaN/AlN superlattices}, volume={83}, DOI={<a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>}, number={19}, journal={Physical Review B}, author={Mietze, C. and Landmann, M. and Rauls, E. and Machhadani, H. and Sakr, S. and Tchernycheva, M. and Julien, F. H. and Schmidt, Wolf Gero and Lischka, K. and As, Donat Josef}, year={2011} }","ieee":"C. Mietze <i>et al.</i>, “Band offsets in cubic GaN/AlN superlattices,” <i>Physical Review B</i>, vol. 83, no. 19, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>.","chicago":"Mietze, C., M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F. H. Julien, Wolf Gero Schmidt, K. Lischka, and Donat Josef As. “Band Offsets in Cubic GaN/AlN Superlattices.” <i>Physical Review B</i> 83, no. 19 (2011). <a href=\"https://doi.org/10.1103/physrevb.83.195301\">https://doi.org/10.1103/physrevb.83.195301</a>.","ama":"Mietze C, Landmann M, Rauls E, et al. Band offsets in cubic GaN/AlN superlattices. <i>Physical Review B</i>. 2011;83(19). doi:<a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>"},"intvolume":"        83","date_updated":"2025-12-05T10:41:18Z","author":[{"last_name":"Mietze","full_name":"Mietze, C.","first_name":"C."},{"first_name":"M.","full_name":"Landmann, M.","last_name":"Landmann"},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."},{"first_name":"H.","last_name":"Machhadani","full_name":"Machhadani, H."},{"first_name":"S.","full_name":"Sakr, S.","last_name":"Sakr"},{"last_name":"Tchernycheva","full_name":"Tchernycheva, M.","first_name":"M."},{"first_name":"F. H.","full_name":"Julien, F. H.","last_name":"Julien"},{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"first_name":"K.","last_name":"Lischka","full_name":"Lischka, K."},{"orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat Josef","first_name":"Donat Josef"}],"date_created":"2019-10-01T09:11:23Z","volume":83,"title":"Band offsets in cubic GaN/AlN superlattices","doi":"10.1103/physrevb.83.195301","type":"journal_article","publication":"Physical Review B","status":"public","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13568","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"284"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"language":[{"iso":"eng"}]},{"_id":"13835","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"284"},{"_id":"790"},{"_id":"35"},{"_id":"230"}],"funded_apc":"1","language":[{"iso":"eng"}],"type":"journal_article","publication":"physica status solidi (b)","status":"public","date_updated":"2025-12-16T07:46:59Z","date_created":"2019-10-15T07:40:58Z","author":[{"first_name":"A.","last_name":"Scholle","full_name":"Scholle, A."},{"first_name":"S.","last_name":"Greulich-Weber","full_name":"Greulich-Weber, S."},{"full_name":"As, Donat Josef","id":"14","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef"},{"first_name":"Ch.","full_name":"Mietze, Ch.","last_name":"Mietze"},{"full_name":"Son, N. T.","last_name":"Son","first_name":"N. T."},{"last_name":"Hemmingsson","full_name":"Hemmingsson, C.","first_name":"C."},{"last_name":"Monemar","full_name":"Monemar, B.","first_name":"B."},{"first_name":"E.","full_name":"Janzén, E.","last_name":"Janzén"},{"full_name":"Gerstmann, Uwe","id":"171","orcid":"0000-0002-4476-223X","last_name":"Gerstmann","first_name":"Uwe"},{"first_name":"S.","last_name":"Sanna","full_name":"Sanna, S."},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."},{"orcid":"0000-0002-2717-5076","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero","id":"468","first_name":"Wolf Gero"}],"volume":247,"title":"Magnetic characterization of conductance electrons in GaN","doi":"10.1002/pssb.200983582","publication_status":"published","publication_identifier":{"issn":["0370-1972","1521-3951"]},"issue":"7","year":"2010","citation":{"chicago":"Scholle, A., S. Greulich-Weber, Donat Josef As, Ch. Mietze, N. T. Son, C. Hemmingsson, B. Monemar, et al. “Magnetic Characterization of Conductance Electrons in GaN.” <i>Physica Status Solidi (b)</i> 247, no. 7 (2010): 1728–31. <a href=\"https://doi.org/10.1002/pssb.200983582\">https://doi.org/10.1002/pssb.200983582</a>.","ieee":"A. Scholle <i>et al.</i>, “Magnetic characterization of conductance electrons in GaN,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1728–1731, 2010, doi: <a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>.","ama":"Scholle A, Greulich-Weber S, As DJ, et al. Magnetic characterization of conductance electrons in GaN. <i>physica status solidi (b)</i>. 2010;247(7):1728-1731. doi:<a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>","short":"A. Scholle, S. Greulich-Weber, D.J. As, Ch. Mietze, N.T. Son, C. Hemmingsson, B. Monemar, E. Janzén, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt, Physica Status Solidi (b) 247 (2010) 1728–1731.","bibtex":"@article{Scholle_Greulich-Weber_As_Mietze_Son_Hemmingsson_Monemar_Janzén_Gerstmann_Sanna_et al._2010, title={Magnetic characterization of conductance electrons in GaN}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>}, number={7}, journal={physica status solidi (b)}, author={Scholle, A. and Greulich-Weber, S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and et al.}, year={2010}, pages={1728–1731} }","mla":"Scholle, A., et al. “Magnetic Characterization of Conductance Electrons in GaN.” <i>Physica Status Solidi (b)</i>, vol. 247, no. 7, 2010, pp. 1728–31, doi:<a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>.","apa":"Scholle, A., Greulich-Weber, S., As, D. J., Mietze, Ch., Son, N. T., Hemmingsson, C., Monemar, B., Janzén, E., Gerstmann, U., Sanna, S., Rauls, E., &#38; Schmidt, W. G. (2010). Magnetic characterization of conductance electrons in GaN. <i>Physica Status Solidi (b)</i>, <i>247</i>(7), 1728–1731. <a href=\"https://doi.org/10.1002/pssb.200983582\">https://doi.org/10.1002/pssb.200983582</a>"},"intvolume":"       247","page":"1728-1731"},{"department":[{"_id":"15"},{"_id":"230"},{"_id":"2"},{"_id":"293"},{"_id":"292"},{"_id":"35"},{"_id":"287"},{"_id":"313"},{"_id":"170"}],"user_id":"16199","_id":"4123","file_date_updated":"2018-08-27T10:06:57Z","article_type":"original","type":"journal_article","status":"public","volume":42,"author":[{"full_name":"Piegdon, Karoline A.","last_name":"Piegdon","first_name":"Karoline A."},{"first_name":"Matthias","full_name":"Offer, Matthias","last_name":"Offer"},{"first_name":"Axel","last_name":"Lorke","full_name":"Lorke, Axel"},{"first_name":"Martin","last_name":"Urbanski","full_name":"Urbanski, Martin"},{"first_name":"Andreas","last_name":"Hoischen","full_name":"Hoischen, Andreas"},{"first_name":"Heinz-Siegfried","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","id":"254"},{"last_name":"Declair","full_name":"Declair, Stefan","first_name":"Stefan"},{"id":"158","full_name":"Förstner, Jens","last_name":"Förstner","orcid":"0000-0001-7059-9862","first_name":"Jens"},{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344","full_name":"Meier, Torsten"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."},{"first_name":"Cedrik","id":"20798","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier"}],"date_updated":"2025-12-16T11:32:03Z","doi":"10.1016/j.physe.2009.12.051","has_accepted_license":"1","publication_identifier":{"issn":["1386-9477"]},"publication_status":"published","intvolume":"        42","page":"2552-2555","citation":{"apa":"Piegdon, K. A., Offer, M., Lorke, A., Urbanski, M., Hoischen, A., Kitzerow, H.-S., Declair, S., Förstner, J., Meier, T., Reuter, D., Wieck, A. D., &#38; Meier, C. (2010). Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2552–2555. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>","short":"K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H.-S. Kitzerow, S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2552–2555.","bibtex":"@article{Piegdon_Offer_Lorke_Urbanski_Hoischen_Kitzerow_Declair_Förstner_Meier_Reuter_et al._2010, title={Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Piegdon, Karoline A. and Offer, Matthias and Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and et al.}, year={2010}, pages={2552–2555} }","mla":"Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","ama":"Piegdon KA, Offer M, Lorke A, et al. Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2552-2555. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>","ieee":"K. A. Piegdon <i>et al.</i>, “Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2552–2555, 2010, doi: <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">10.1016/j.physe.2009.12.051</a>.","chicago":"Piegdon, Karoline A., Matthias Offer, Axel Lorke, Martin Urbanski, Andreas Hoischen, Heinz-Siegfried Kitzerow, Stefan Declair, et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2552–55. <a href=\"https://doi.org/10.1016/j.physe.2009.12.051\">https://doi.org/10.1016/j.physe.2009.12.051</a>."},"language":[{"iso":"eng"}],"keyword":["tet_topic_qd","tet_topic_microdisk"],"ddc":["530"],"publication":"Physica E: Low-dimensional Systems and Nanostructures","file":[{"content_type":"application/pdf","relation":"main_file","success":1,"creator":"hclaudia","date_created":"2018-08-27T10:06:57Z","date_updated":"2018-08-27T10:06:57Z","file_id":"4124","file_name":"2010 Piegdon,Offer,Lork,Urbanski,Hoischen,Kitzerwo, Declair,Förstner_Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator.pdf","access_level":"closed","file_size":403248}],"abstract":[{"lang":"eng","text":"GaAs-based semiconductor microdisks with high quality whispering gallery modes (Q44000) have been fabricated.A layer of self-organized InAs quantumdots (QDs) served as a light source to feed the optical modes at room temperature. In order to achieve frequency tuning of the optical modes, the microdisk devices have been immersed in 4 – cyano – 4´-pentylbiphenyl (5CB), a liquid crystal(LC) with a nematic phase below the clearing temperature of  TC≈34°C .We have studied the device performance in the temperature rangeof T=20-50°C, in order to investigate the influence of the nematic–isotropic phase transition on the optical modes. Moreover,we havea pplied an AC electric field to the device,which leads in the nematic phase to a reorientation of the anisotropic dielectric tensor of the liquid crystal.This electrical anisotropy can be used to achieve electrical tunability of the optical modes.Using the finite-difference time domain (FDTD) technique with an anisotropic material model, we are able to describe the influence of the liquid crystal qualitatively."}],"date_created":"2018-08-27T10:03:35Z","publisher":"Elsevier BV","title":"Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator","issue":"10","year":"2010"},{"status":"public","urn":"41725","type":"journal_article","file_date_updated":"2018-09-04T20:02:01Z","article_number":"7946","article_type":"original","user_id":"16199","department":[{"_id":"15"},{"_id":"287"},{"_id":"293"},{"_id":"292"},{"_id":"35"},{"_id":"230"},{"_id":"313"},{"_id":"170"},{"_id":"27"},{"_id":"34"},{"_id":"61"}],"project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"},{"name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"4172","citation":{"apa":"Piegdon, K. A., Declair, S., Förstner, J., Meier, T., Matthias, H., Urbanski, M., Kitzerow, H.-S., Reuter, D., Wieck, A. D., Lorke, A., &#38; Meier, C. (2010). Tuning quantum-dot based photonic devices with liquid crystals. <i>Optics Express</i>, <i>18</i>(8), Article 7946. <a href=\"https://doi.org/10.1364/oe.18.007946\">https://doi.org/10.1364/oe.18.007946</a>","short":"K.A. Piegdon, S. Declair, J. Förstner, T. Meier, H. Matthias, M. Urbanski, H.-S. Kitzerow, D. Reuter, A.D. Wieck, A. Lorke, C. Meier, Optics Express 18 (2010).","bibtex":"@article{Piegdon_Declair_Förstner_Meier_Matthias_Urbanski_Kitzerow_Reuter_Wieck_Lorke_et al._2010, title={Tuning quantum-dot based photonic devices with liquid crystals}, volume={18}, DOI={<a href=\"https://doi.org/10.1364/oe.18.007946\">10.1364/oe.18.007946</a>}, number={87946}, journal={Optics Express}, publisher={The Optical Society}, author={Piegdon, Karoline A. and Declair, Stefan and Förstner, Jens and Meier, Torsten and Matthias, Heiner and Urbanski, Martin and Kitzerow, Heinz-Siegfried and Reuter, Dirk and Wieck, Andreas D. and Lorke, Axel and et al.}, year={2010} }","mla":"Piegdon, Karoline A., et al. “Tuning Quantum-Dot Based Photonic Devices with Liquid Crystals.” <i>Optics Express</i>, vol. 18, no. 8, 7946, The Optical Society, 2010, doi:<a href=\"https://doi.org/10.1364/oe.18.007946\">10.1364/oe.18.007946</a>.","ama":"Piegdon KA, Declair S, Förstner J, et al. Tuning quantum-dot based photonic devices with liquid crystals. <i>Optics Express</i>. 2010;18(8). doi:<a href=\"https://doi.org/10.1364/oe.18.007946\">10.1364/oe.18.007946</a>","chicago":"Piegdon, Karoline A., Stefan Declair, Jens Förstner, Torsten Meier, Heiner Matthias, Martin Urbanski, Heinz-Siegfried Kitzerow, et al. “Tuning Quantum-Dot Based Photonic Devices with Liquid Crystals.” <i>Optics Express</i> 18, no. 8 (2010). <a href=\"https://doi.org/10.1364/oe.18.007946\">https://doi.org/10.1364/oe.18.007946</a>.","ieee":"K. A. Piegdon <i>et al.</i>, “Tuning quantum-dot based photonic devices with liquid crystals,” <i>Optics Express</i>, vol. 18, no. 8, Art. no. 7946, 2010, doi: <a href=\"https://doi.org/10.1364/oe.18.007946\">10.1364/oe.18.007946</a>."},"intvolume":"        18","publication_status":"published","publication_identifier":{"issn":["1094-4087"]},"has_accepted_license":"1","doi":"10.1364/oe.18.007946","author":[{"first_name":"Karoline A.","full_name":"Piegdon, Karoline A.","last_name":"Piegdon"},{"last_name":"Declair","full_name":"Declair, Stefan","first_name":"Stefan"},{"last_name":"Förstner","orcid":"0000-0001-7059-9862","id":"158","full_name":"Förstner, Jens","first_name":"Jens"},{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"first_name":"Heiner","last_name":"Matthias","full_name":"Matthias, Heiner"},{"first_name":"Martin","full_name":"Urbanski, Martin","last_name":"Urbanski"},{"last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","id":"254","first_name":"Heinz-Siegfried"},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"},{"full_name":"Lorke, Axel","last_name":"Lorke","first_name":"Axel"},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","full_name":"Meier, Cedrik","id":"20798"}],"volume":18,"oa":"1","date_updated":"2025-12-16T16:44:44Z","file":[{"date_updated":"2018-09-04T20:02:01Z","date_created":"2018-08-28T08:52:50Z","creator":"hclaudia","file_size":627755,"file_id":"4173","file_name":"2010 Piegdon,Declair,Förstner,Meier T,Matthias,Urbanski,Kitzerow,Reuter,Wieck,Lorcke,Meier C_Tuning quantum-dot based photonic devices with liquid crystals.pdf","access_level":"open_access","content_type":"application/pdf","relation":"main_file"}],"abstract":[{"lang":"eng","text":"Microdisks made from GaAs with embedded InAs quantum dots are immersed in the liquid crystal 4-cyano-4’-pentylbiphenyl (5CB). The quantum dots serve as emitters feeding the optical modes of the photonic cavity. By changing temperature, the liquid crystal undergoes a phase transition from the isotropic to the nematic state, which can be used\r\nas an effective tuning mechanism of the photonic modes of the cavity. In the nematic state, the uniaxial electrical anisotropy of the liquid crystal molecules can be exploited for orienting the material in an electric field,\r\nthus externally controlling the birefringence of the material. Using this effect, an electric field induced tuning of the modes is achieved. Numerical simulations using the finite-differences time-domain (FDTD) technique\r\nemploying an anisotropic dielectric medium allow to understand the alignment of the liquid crystal molecules on the surface of the microdisk resonator."}],"publication":"Optics Express","language":[{"iso":"eng"}],"ddc":["530"],"keyword":["tet_topic_qd","tet_topic_microdisk"],"year":"2010","issue":"8","title":"Tuning quantum-dot based photonic devices with liquid crystals","date_created":"2018-08-28T08:50:06Z","publisher":"The Optical Society"},{"user_id":"14931","department":[{"_id":"15"},{"_id":"284"}],"_id":"4218","language":[{"iso":"eng"}],"type":"conference","publication":"Materials Research Society Symposium Proceedings","status":"public","abstract":[{"text":"In this work we focus on the fabrication of ohmic contacts and of Schottky barrier devices (SBD) on non-polar cubic GaN epilayers grown by molecular beam epitaxy (MBE). A Ti/Al/Ni/Au metallization was used for ohmic contacts and the contact resistance was measured by transmission line measurements (TLM). Ni, Pd, Ag and NiSi Schottky barrier devices 300 µm in diameter were fabricated by thermal evaporation using contact lithography on cubic GaN epilayers. The current-voltage (I-V) and the capacity-voltage (C-V) characteristics were studied at room temperature in detail. A clear rectifying behavior was measured in all SBDs. In the Ni and Ag SBDs an abnormal large leakage current under reverse bias was observed. Isochronal thermal annealing of these Ni and Ag based SBDs at 200°C in air improved the reverse characteristics by up to three orders of magnitude. This is in contrast to the Pd contacts, where the as grown contact showed already good performance and thermal annealing had nearly no influence on the I-V characteristics. For all SBDs the magnitude of the reverse current is generally larger than that expected due to thermionic emission and an exponential increase of the reverse current is observed with increasing reverse voltage. In-depth analysis of the I-V characteristic showed that a thin surface barrier is formed at the metal semiconductor interface and that crystal defects like dislocations may be the reasons for the discrepancy between experimental data and thermionic emission theory. ","lang":"eng"}],"author":[{"last_name":"As","orcid":"0000-0003-1121-3565","full_name":"As, Donat J.","id":"14","first_name":"Donat J."},{"first_name":"Elena","full_name":"Tschumak, Elena","last_name":"Tschumak"},{"full_name":"Laubenstein, Irina","last_name":"Laubenstein","first_name":"Irina"},{"first_name":"Ricarda M.","full_name":"Kemper, Ricarda M.","last_name":"Kemper"},{"full_name":"Lischka, Klaus","last_name":"Lischka","first_name":"Klaus"}],"date_created":"2018-08-28T12:57:35Z","volume":1108,"publisher":"Materials Research Society","date_updated":"2023-10-09T09:12:30Z","doi":"10.1557/proc-1108-a01-02","title":"Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers","publication_status":"published","citation":{"apa":"As, D. J., Tschumak, E., Laubenstein, I., Kemper, R. M., &#38; Lischka, K. (2009). Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers. <i>Materials Research Society Symposium Proceedings</i>, <i>1108</i>, 3–8. <a href=\"https://doi.org/10.1557/proc-1108-a01-02\">https://doi.org/10.1557/proc-1108-a01-02</a>","bibtex":"@inproceedings{As_Tschumak_Laubenstein_Kemper_Lischka_2009, title={Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers}, volume={1108}, DOI={<a href=\"https://doi.org/10.1557/proc-1108-a01-02\">10.1557/proc-1108-a01-02</a>}, booktitle={Materials Research Society Symposium Proceedings}, publisher={Materials Research Society}, author={As, Donat J. and Tschumak, Elena and Laubenstein, Irina and Kemper, Ricarda M. and Lischka, Klaus}, year={2009}, pages={3–8} }","short":"D.J. As, E. Tschumak, I. Laubenstein, R.M. Kemper, K. Lischka, in: Materials Research Society Symposium Proceedings, Materials Research Society, 2009, pp. 3–8.","mla":"As, Donat J., et al. “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers.” <i>Materials Research Society Symposium Proceedings</i>, vol. 1108, Materials Research Society, 2009, pp. 3–8, doi:<a href=\"https://doi.org/10.1557/proc-1108-a01-02\">10.1557/proc-1108-a01-02</a>.","ieee":"D. J. As, E. Tschumak, I. Laubenstein, R. M. Kemper, and K. Lischka, “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers,” in <i>Materials Research Society Symposium Proceedings</i>, 2009, vol. 1108, pp. 3–8, doi: <a href=\"https://doi.org/10.1557/proc-1108-a01-02\">10.1557/proc-1108-a01-02</a>.","chicago":"As, Donat J., Elena Tschumak, Irina Laubenstein, Ricarda M. Kemper, and Klaus Lischka. “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers.” In <i>Materials Research Society Symposium Proceedings</i>, 1108:3–8. Materials Research Society, 2009. <a href=\"https://doi.org/10.1557/proc-1108-a01-02\">https://doi.org/10.1557/proc-1108-a01-02</a>.","ama":"As DJ, Tschumak E, Laubenstein I, Kemper RM, Lischka K. Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers. In: <i>Materials Research Society Symposium Proceedings</i>. Vol 1108. Materials Research Society; 2009:3-8. doi:<a href=\"https://doi.org/10.1557/proc-1108-a01-02\">10.1557/proc-1108-a01-02</a>"},"intvolume":"      1108","page":"3-8","year":"2009"}]