---
_id: '36804'
article_number: '126756'
author:
- first_name: Tobias
full_name: Henksmeier, Tobias
id: '42539'
last_name: Henksmeier
- first_name: Johann Friedemann
full_name: Schulz, Johann Friedemann
last_name: Schulz
- first_name: Elias
full_name: Kluth, Elias
last_name: Kluth
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Ana M.
full_name: Sanchez, Ana M.
last_name: Sanchez
- first_name: Markus
full_name: Voigt, Markus
id: '15182'
last_name: Voigt
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of In(x)Ga(1-x)As(001)
on graphene covered GaAs(001) substrates. Journal of Crystal Growth. 2022;593.
doi:10.1016/j.jcrysgro.2022.126756
apa: Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez,
A. M., Voigt, M., Grundmeier, G., & Reuter, D. (2022). Remote epitaxy of In(x)Ga(1-x)As(001)
on graphene covered GaAs(001) substrates. Journal of Crystal Growth, 593,
Article 126756. https://doi.org/10.1016/j.jcrysgro.2022.126756
bibtex: '@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022,
title={Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates},
volume={593}, DOI={10.1016/j.jcrysgro.2022.126756},
number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier}, author={Henksmeier,
Tobias and Schulz, Johann Friedemann and Kluth, Elias and Feneberg, Martin and
Goldhahn, Rüdiger and Sanchez, Ana M. and Voigt, Markus and Grundmeier, Guido
and Reuter, Dirk}, year={2022} }'
chicago: Henksmeier, Tobias, Johann Friedemann Schulz, Elias Kluth, Martin Feneberg,
Rüdiger Goldhahn, Ana M. Sanchez, Markus Voigt, Guido Grundmeier, and Dirk Reuter.
“Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene Covered GaAs(001) Substrates.”
Journal of Crystal Growth 593 (2022). https://doi.org/10.1016/j.jcrysgro.2022.126756.
ieee: 'T. Henksmeier et al., “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene
covered GaAs(001) substrates,” Journal of Crystal Growth, vol. 593, Art.
no. 126756, 2022, doi: 10.1016/j.jcrysgro.2022.126756.'
mla: Henksmeier, Tobias, et al. “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene
Covered GaAs(001) Substrates.” Journal of Crystal Growth, vol. 593, 126756,
Elsevier, 2022, doi:10.1016/j.jcrysgro.2022.126756.
short: T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez,
M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).
date_created: 2023-01-13T15:40:17Z
date_updated: 2023-01-13T16:02:06Z
department:
- _id: '15'
- _id: '2'
- _id: '292'
- _id: '230'
doi: 10.1016/j.jcrysgro.2022.126756
intvolume: ' 593'
language:
- iso: eng
project:
- _id: '63'
name: 'TRR 142 - A6: TRR 142 - Subproject A6'
publication: Journal of Crystal Growth
publication_status: published
publisher: Elsevier
status: public
title: Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates
type: journal_article
user_id: '42539'
volume: 593
year: '2022'
...
---
_id: '40428'
author:
- first_name: Björn
full_name: Jonas, Björn
last_name: Jonas
- first_name: Dirk Florian
full_name: Heinze, Dirk Florian
id: '10904'
last_name: Heinze
- first_name: Eva
full_name: Schöll, Eva
last_name: Schöll
- first_name: Patricia
full_name: Kallert, Patricia
last_name: Kallert
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Sebastian
full_name: Krehs, Sebastian
last_name: Krehs
- first_name: Alex
full_name: Widhalm, Alex
last_name: Widhalm
- first_name: Klaus
full_name: Jöns, Klaus
id: '85353'
last_name: Jöns
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Jonas B, Heinze DF, Schöll E, et al. Nonlinear Down-Conversion in a Single
Quantum Dot. LibreCat University; 2022. doi:10.5281/ZENODO.6024228
apa: Jonas, B., Heinze, D. F., Schöll, E., Kallert, P., Langer, T., Krehs, S., Widhalm,
A., Jöns, K., Reuter, D., & Zrenner, A. (2022). Nonlinear down-conversion
in a single quantum dot. LibreCat University. https://doi.org/10.5281/ZENODO.6024228
bibtex: '@book{Jonas_Heinze_Schöll_Kallert_Langer_Krehs_Widhalm_Jöns_Reuter_Zrenner_2022,
title={Nonlinear down-conversion in a single quantum dot}, DOI={10.5281/ZENODO.6024228},
publisher={LibreCat University}, author={Jonas, Björn and Heinze, Dirk Florian
and Schöll, Eva and Kallert, Patricia and Langer, Timo and Krehs, Sebastian and
Widhalm, Alex and Jöns, Klaus and Reuter, Dirk and Zrenner, Artur}, year={2022}
}'
chicago: Jonas, Björn, Dirk Florian Heinze, Eva Schöll, Patricia Kallert, Timo Langer,
Sebastian Krehs, Alex Widhalm, Klaus Jöns, Dirk Reuter, and Artur Zrenner. Nonlinear
Down-Conversion in a Single Quantum Dot. LibreCat University, 2022. https://doi.org/10.5281/ZENODO.6024228.
ieee: B. Jonas et al., Nonlinear down-conversion in a single quantum dot.
LibreCat University, 2022.
mla: Jonas, Björn, et al. Nonlinear Down-Conversion in a Single Quantum Dot.
LibreCat University, 2022, doi:10.5281/ZENODO.6024228.
short: B. Jonas, D.F. Heinze, E. Schöll, P. Kallert, T. Langer, S. Krehs, A. Widhalm,
K. Jöns, D. Reuter, A. Zrenner, Nonlinear Down-Conversion in a Single Quantum
Dot, LibreCat University, 2022.
date_created: 2023-01-26T15:38:28Z
date_updated: 2023-04-20T15:18:48Z
department:
- _id: '15'
- _id: '170'
- _id: '297'
- _id: '290'
- _id: '292'
- _id: '642'
- _id: '230'
- _id: '429'
- _id: '35'
doi: 10.5281/ZENODO.6024228
project:
- _id: '53'
name: 'TRR 142: TRR 142'
- _id: '54'
name: 'TRR 142 - A: TRR 142 - Project Area A'
- _id: '60'
name: 'TRR 142 - A3: TRR 142 - Subproject A3'
- _id: '52'
name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publisher: LibreCat University
status: public
title: Nonlinear down-conversion in a single quantum dot
type: research_data
user_id: '16199'
year: '2022'
...
---
_id: '4413'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay
full_name: Kunnathully, Vinay
last_name: Kunnathully
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Riedl T, Kunnathully V, Trapp A, Reuter D, Lindner J. Strain Relaxation in
InAs Nanoislands on top of GaAs (111) A Nanopillars. In: ; 2018.'
apa: Riedl, T., Kunnathully, V., Trapp, A., Reuter, D., & Lindner, J. (2018).
Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars. Presented
at the 14th International Conference on Atomically Controlles Surfaces, Interfaces
and Nanostructures (ACSIN-14), Sendai (Japan).
bibtex: '@inproceedings{Riedl_Kunnathully_Trapp_Reuter_Lindner_2018, title={Strain
Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars}, author={Riedl,
Thomas and Kunnathully, Vinay and Trapp, Alexander and Reuter, Dirk and Lindner,
Jörg}, year={2018} }'
chicago: Riedl, Thomas, Vinay Kunnathully, Alexander Trapp, Dirk Reuter, and Jörg
Lindner. “Strain Relaxation in InAs Nanoislands on Top of GaAs (111) A Nanopillars,”
2018.
ieee: T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “Strain Relaxation
in InAs Nanoislands on top of GaAs (111) A Nanopillars,” presented at the 14th
International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures
(ACSIN-14), Sendai (Japan), 2018.
mla: Riedl, Thomas, et al. Strain Relaxation in InAs Nanoislands on Top of GaAs
(111) A Nanopillars. 2018.
short: 'T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.'
conference:
end_date: 2018-10-25
location: Sendai (Japan)
name: 14th International Conference on Atomically Controlles Surfaces, Interfaces
and Nanostructures (ACSIN-14)
start_date: 2018-10-21
date_created: 2018-09-17T13:15:55Z
date_updated: 2022-01-06T07:01:02Z
department:
- _id: '286'
- _id: '292'
language:
- iso: eng
status: public
title: Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars
type: conference
user_id: '55706'
year: '2018'
...
---
_id: '4414'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay
full_name: Kunnathully, Vinay
last_name: Kunnathully
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Riedl T, Kunnathully V, Trapp A, Reuter D, Lindner J. MBE Growth of InAs on
Nanopillar-Patterned GaAs (111) A . In: ; 2018.'
apa: Riedl, T., Kunnathully, V., Trapp, A., Reuter, D., & Lindner, J. (2018).
MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A . Presented at the 14th
International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures
(ACSIN-14), Sendai (Japan).
bibtex: '@inproceedings{Riedl_Kunnathully_Trapp_Reuter_Lindner_2018, title={MBE
Growth of InAs on Nanopillar-Patterned GaAs (111) A }, author={Riedl, Thomas and
Kunnathully, Vinay and Trapp, Alexander and Reuter, Dirk and Lindner, Jörg}, year={2018}
}'
chicago: Riedl, Thomas, Vinay Kunnathully, Alexander Trapp, Dirk Reuter, and Jörg
Lindner. “MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A ,” 2018.
ieee: T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “MBE Growth
of InAs on Nanopillar-Patterned GaAs (111) A ,” presented at the 14th International
Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14),
Sendai (Japan), 2018.
mla: Riedl, Thomas, et al. MBE Growth of InAs on Nanopillar-Patterned GaAs (111)
A . 2018.
short: 'T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.'
conference:
end_date: 2018-10-25
location: Sendai (Japan)
name: 14th International Conference on Atomically Controlles Surfaces, Interfaces
and Nanostructures (ACSIN-14)
start_date: 2018-10-21
date_created: 2018-09-17T13:20:48Z
date_updated: 2022-01-06T07:01:02Z
department:
- _id: '286'
- _id: '292'
language:
- iso: eng
status: public
title: 'MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A '
type: conference
user_id: '55706'
year: '2018'
...
---
_id: '3955'
author:
- first_name: Vinay
full_name: Kunnathully, Vinay
last_name: Kunnathully
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: A.
full_name: Karlisch, A.
last_name: Karlisch
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Kunnathully V, Riedl T, Karlisch A, Reuter D, Lindner J. InAs heteroepitaxy
on GaAs patterned by nanosphere lithography. In: ; 2017.'
apa: Kunnathully, V., Riedl, T., Karlisch, A., Reuter, D., & Lindner, J. (2017).
InAs heteroepitaxy on GaAs patterned by nanosphere lithography. Presented at the
E-MRS Fall Meeting 2017, Warsaw (Poland).
bibtex: '@inproceedings{Kunnathully_Riedl_Karlisch_Reuter_Lindner_2017, title={InAs
heteroepitaxy on GaAs patterned by nanosphere lithography}, author={Kunnathully,
Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg},
year={2017} }'
chicago: Kunnathully, Vinay, Thomas Riedl, A. Karlisch, Dirk Reuter, and Jörg Lindner.
“InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography,” 2017.
ieee: V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, and J. Lindner, “InAs heteroepitaxy
on GaAs patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting
2017, Warsaw (Poland), 2017.
mla: Kunnathully, Vinay, et al. InAs Heteroepitaxy on GaAs Patterned by Nanosphere
Lithography. 2017.
short: 'V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, in: 2017.'
conference:
end_date: 2017-09-21
location: Warsaw (Poland)
name: E-MRS Fall Meeting 2017
start_date: 2017-09-18
date_created: 2018-08-20T13:31:50Z
date_updated: 2022-01-06T06:59:59Z
department:
- _id: '286'
- _id: '292'
- _id: '15'
status: public
title: InAs heteroepitaxy on GaAs patterned by nanosphere lithography
type: conference
user_id: '55706'
year: '2017'
...
---
_id: '3987'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: 'Vinay '
full_name: 'Kunnathully, Vinay '
last_name: Kunnathully
- first_name: A.
full_name: Karlisch, A.
last_name: Karlisch
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Riedl T, Kunnathully V, Karlisch A, Reuter D, Lindner J. Group III arsenide
heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography.
In: ; 2017.'
apa: Riedl, T., Kunnathully, V., Karlisch, A., Reuter, D., & Lindner, J. (2017).
Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned
by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaq (Poland).
bibtex: '@inproceedings{Riedl_Kunnathully_Karlisch_Reuter_Lindner_2017, title={Group
III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere
lithography}, author={Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and
Reuter, Dirk and Lindner, Jörg}, year={2017} }'
chicago: Riedl, Thomas, Vinay Kunnathully, A. Karlisch, Dirk Reuter, and Jörg Lindner.
“Group III Arsenide Heteroepitaxy on Si(111) Using SiNx Nanohole Masks Patterned
by Nanosphere Lithography,” 2017.
ieee: T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, and J. Lindner, “Group III
arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere
lithography,” presented at the E-MRS Fall Meeting 2017, Warsaq (Poland), 2017.
mla: Riedl, Thomas, et al. Group III Arsenide Heteroepitaxy on Si(111) Using
SiNx Nanohole Masks Patterned by Nanosphere Lithography. 2017.
short: 'T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, J. Lindner, in: 2017.'
conference:
end_date: 2017-09-21
location: Warsaq (Poland)
name: E-MRS Fall Meeting 2017
start_date: 2017-09-18
date_created: 2018-08-21T11:35:05Z
date_updated: 2022-01-06T07:00:04Z
department:
- _id: '292'
- _id: '286'
- _id: '15'
language:
- iso: eng
publication_status: published
status: public
title: Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned
by nanosphere lithography
type: conference
user_id: '55706'
year: '2017'
...
---
_id: '3988'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay
full_name: Kunnathully, Vinay
last_name: Kunnathully
- first_name: A.
full_name: Karlisch, A.
last_name: Karlisch
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: N.
full_name: Weber, N.
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: R.
full_name: Schierholz, R.
last_name: Schierholz
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Kunnathully V, Karlisch A, et al. Morphology, structure and enhanced
PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs.
2017.
apa: Riedl, T., Kunnathully, V., Karlisch, A., Reuter, D., Weber, N., Meier, C.,
… Lindner, J. (2017). Morphology, structure and enhanced PL of molecular beam
epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs. Presented at the E-MRS
Spring Meeting 2017, Straßburg (France).
bibtex: '@article{Riedl_Kunnathully_Karlisch_Reuter_Weber_Meier_Schierholz_Lindner_2017,
series={contributed talk N.16.1}, title={Morphology, structure and enhanced PL
of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs},
author={Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk
and Weber, N. and Meier, Cedrik and Schierholz, R. and Lindner, Jörg}, year={2017},
collection={contributed talk N.16.1} }'
chicago: Riedl, Thomas, Vinay Kunnathully, A. Karlisch, Dirk Reuter, N. Weber, Cedrik
Meier, R. Schierholz, and Jörg Lindner. “Morphology, Structure and Enhanced PL
of Molecular Beam Epitaxial In0.2Ga0.8As Layers on Nanopillar Patterned GaAs.”
Contributed Talk N.16.1, 2017.
ieee: T. Riedl et al., “Morphology, structure and enhanced PL of molecular
beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs.” 2017.
mla: Riedl, Thomas, et al. Morphology, Structure and Enhanced PL of Molecular
Beam Epitaxial In0.2Ga0.8As Layers on Nanopillar Patterned GaAs. 2017.
short: T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, N. Weber, C. Meier, R.
Schierholz, J. Lindner, (2017).
conference:
end_date: 2017-05-26
location: Straßburg (France)
name: E-MRS Spring Meeting 2017
start_date: 2017-05-22
date_created: 2018-08-21T11:39:30Z
date_updated: 2022-01-06T07:00:04Z
department:
- _id: '286'
- _id: '292'
- _id: '287'
- _id: '15'
- _id: '35'
- _id: '230'
language:
- iso: eng
series_title: contributed talk N.16.1
status: public
title: Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As
layers on nanopillar patterned GaAs
type: conference
user_id: '20798'
year: '2017'
...
---
_id: '3888'
abstract:
- lang: eng
text: 'We successfully developed a process to fabricate freestanding cubic aluminium
nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots
(QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE).
To realize the photonic crystal (PhC) membrane we have chosen a triangular array
of holes. The array was fabricated by electron beam lithography and several steps
of reactive ion etching (RIE) with the help of a hard mask and an undercut of
the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations
to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL)
measurements of the photonic crystals, in particular of a H1 and a L3 cavity,
and the emission of the QD ensemble were performed to characterize the samples.
The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000
for two different modes of the L3 cavity, respectively. The energy of the fundamental
modes is in good agreement to the numerical simulations. '
article_type: original
author:
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Matthias
full_name: Bürger, Matthias
last_name: Bürger
- first_name: Andre
full_name: Hildebrandt, Andre
last_name: Hildebrandt
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Blumenthal S, Bürger M, Hildebrandt A, et al. Fabrication and characterization
of two-dimensional cubic AlN photonic crystal membranes containing zincblende
GaN quantum dots. physica status solidi (c). 2016;13(5-6):292-296. doi:10.1002/pssc.201600010
apa: Blumenthal, S., Bürger, M., Hildebrandt, A., Förstner, J., Weber, N., Meier,
C., Reuter, D., & As, D. J. (2016). Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. Physica
Status Solidi (c), 13(5–6), 292–296. https://doi.org/10.1002/pssc.201600010
bibtex: '@article{Blumenthal_Bürger_Hildebrandt_Förstner_Weber_Meier_Reuter_As_2016,
title={Fabrication and characterization of two-dimensional cubic AlN photonic
crystal membranes containing zincblende GaN quantum dots}, volume={13}, DOI={10.1002/pssc.201600010}, number={5–6},
journal={physica status solidi (c)}, publisher={Wiley}, author={Blumenthal, Sarah
and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils
and Meier, Cedrik and Reuter, Dirk and As, Donat J.}, year={2016}, pages={292–296}
}'
chicago: 'Blumenthal, Sarah, Matthias Bürger, Andre Hildebrandt, Jens Förstner,
Nils Weber, Cedrik Meier, Dirk Reuter, and Donat J. As. “Fabrication and Characterization
of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende
GaN Quantum Dots.” Physica Status Solidi (c) 13, no. 5–6 (2016): 292–96.
https://doi.org/10.1002/pssc.201600010.'
ieee: 'S. Blumenthal et al., “Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,”
physica status solidi (c), vol. 13, no. 5–6, pp. 292–296, 2016, doi: 10.1002/pssc.201600010.'
mla: Blumenthal, Sarah, et al. “Fabrication and Characterization of Two-Dimensional
Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.”
Physica Status Solidi (c), vol. 13, no. 5–6, Wiley, 2016, pp. 292–96, doi:10.1002/pssc.201600010.
short: S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier,
D. Reuter, D.J. As, Physica Status Solidi (c) 13 (2016) 292–296.
date_created: 2018-08-13T09:14:58Z
date_updated: 2023-10-09T09:06:08Z
ddc:
- '530'
department:
- _id: '61'
- _id: '284'
- _id: '290'
- _id: '292'
- _id: '287'
- _id: '35'
- _id: '230'
doi: 10.1002/pssc.201600010
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-13T09:20:05Z
date_updated: 2018-08-13T09:20:05Z
file_id: '3889'
file_name: 2016-04 Blumenthal_et_al_Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots_physica_status_solidi_(c).pdf
file_size: 1119165
relation: main_file
success: 1
file_date_updated: 2018-08-13T09:20:05Z
has_accepted_license: '1'
intvolume: ' 13'
issue: 5-6
keyword:
- tet_topic_phc
- tet_topic_qd
language:
- iso: eng
page: 292-296
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Fabrication and characterization of two-dimensional cubic AlN photonic crystal
membranes containing zincblende GaN quantum dots
type: journal_article
user_id: '14931'
volume: 13
year: '2016'
...
---
_id: '4246'
abstract:
- lang: eng
text: Spins in semiconductor quantum dots have been considered as prospective quantum
bit excitations. Their coupling to the crystal environment manifests itself in
a limitation of the spin coherence times to the microsecond range, both for electron
and hole spins. This rather short-lived coherence compared to atomic states asks
for manipulations on timescales as short as possible. Due to the huge dipole moment
for transitions between the valence and conduction band, pulsed laser systems
offer the possibility to perform manipulations within picoseconds or even faster.
Here, we report on results that show the potential of optical spin manipulations
with currently available pulsed laser systems. Using picosecond laser pulses,
we demonstrate optically induced spin rotations of electron and hole spins. We
further realize the optical decoupling of the hole spins from the nuclear surrounding
at the nanosecond timescales and demonstrate an all-optical spin tomography for
interacting electron spin sub-ensembles.
article_number: '17'
article_type: original
author:
- first_name: S.
full_name: Varwig, S.
last_name: Varwig
- first_name: E.
full_name: Evers, E.
last_name: Evers
- first_name: A.
full_name: Greilich, A.
last_name: Greilich
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Varwig S, Evers E, Greilich A, et al. Advanced optical manipulation of carrier
spins in (In,Ga)As quantum dots. Applied Physics B. 2016;122(1). doi:10.1007/s00340-015-6274-y
apa: Varwig, S., Evers, E., Greilich, A., Yakovlev, D. R., Reuter, D., Wieck, A.
D., Meier, T., Zrenner, A., & Bayer, M. (2016). Advanced optical manipulation
of carrier spins in (In,Ga)As quantum dots. Applied Physics B, 122(1),
Article 17. https://doi.org/10.1007/s00340-015-6274-y
bibtex: '@article{Varwig_Evers_Greilich_Yakovlev_Reuter_Wieck_Meier_Zrenner_Bayer_2016,
title={Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots},
volume={122}, DOI={10.1007/s00340-015-6274-y},
number={117}, journal={Applied Physics B}, publisher={Springer Nature}, author={Varwig,
S. and Evers, E. and Greilich, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck,
A. D. and Meier, Torsten and Zrenner, Artur and Bayer, M.}, year={2016} }'
chicago: Varwig, S., E. Evers, A. Greilich, D. R. Yakovlev, Dirk Reuter, A. D. Wieck,
Torsten Meier, Artur Zrenner, and M. Bayer. “Advanced Optical Manipulation of
Carrier Spins in (In,Ga)As Quantum Dots.” Applied Physics B 122, no. 1
(2016). https://doi.org/10.1007/s00340-015-6274-y.
ieee: 'S. Varwig et al., “Advanced optical manipulation of carrier spins
in (In,Ga)As quantum dots,” Applied Physics B, vol. 122, no. 1, Art. no.
17, 2016, doi: 10.1007/s00340-015-6274-y.'
mla: Varwig, S., et al. “Advanced Optical Manipulation of Carrier Spins in (In,Ga)As
Quantum Dots.” Applied Physics B, vol. 122, no. 1, 17, Springer Nature,
2016, doi:10.1007/s00340-015-6274-y.
short: S. Varwig, E. Evers, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, T.
Meier, A. Zrenner, M. Bayer, Applied Physics B 122 (2016).
date_created: 2018-08-29T08:35:10Z
date_updated: 2025-12-16T16:44:01Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '170'
- _id: '293'
- _id: '292'
- _id: '35'
- _id: '290'
doi: 10.1007/s00340-015-6274-y
intvolume: ' 122'
issue: '1'
keyword:
- Spin Polarization
- Pump Pulse
- Trion
- Spin Component
- Coherence Time
language:
- iso: eng
publication: Applied Physics B
publication_identifier:
issn:
- 0946-2171
- 1432-0649
publication_status: published
publisher: Springer Nature
status: public
title: Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots
type: journal_article
user_id: '16199'
volume: 122
year: '2016'
...
---
_id: '3900'
abstract:
- lang: eng
text: The coherent state preparation and control of single quantum systems is an
important prerequisite for the implementation of functional quantum devices. Prominent
examples for such systems are semiconductor quantum dots, which exhibit a fine
structure split single exciton state and a V-type three level structure, given
by a common ground state and two distinguishable and separately excitable transitions.
In this work we introduce a novel concept for the preparation of a robust inversion
by the sequential excitation in a V-type system via distinguishable paths.
article_type: original
author:
- first_name: D.
full_name: Mantei, D.
last_name: Mantei
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: S.
full_name: Gordon, S.
last_name: Gordon
- first_name: Y. A.
full_name: Leier, Y. A.
last_name: Leier
- first_name: A. K.
full_name: Rai, A. K.
last_name: Rai
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Mantei D, Förstner J, Gordon S, et al. Robust Population Inversion by Polarization
Selective Pulsed Excitation. Scientific Reports. 2015;5(1):10313. doi:10.1038/srep10313
apa: Mantei, D., Förstner, J., Gordon, S., Leier, Y. A., Rai, A. K., Reuter, D.,
… Zrenner, A. (2015). Robust Population Inversion by Polarization Selective Pulsed
Excitation. Scientific Reports, 5(1), 10313. https://doi.org/10.1038/srep10313
bibtex: '@article{Mantei_Förstner_Gordon_Leier_Rai_Reuter_Wieck_Zrenner_2015, title={Robust
Population Inversion by Polarization Selective Pulsed Excitation}, volume={5},
DOI={10.1038/srep10313}, number={1},
journal={Scientific Reports}, publisher={Springer Nature}, author={Mantei, D.
and Förstner, Jens and Gordon, S. and Leier, Y. A. and Rai, A. K. and Reuter,
Dirk and Wieck, A. D. and Zrenner, Artur}, year={2015}, pages={10313} }'
chicago: 'Mantei, D., Jens Förstner, S. Gordon, Y. A. Leier, A. K. Rai, Dirk Reuter,
A. D. Wieck, and Artur Zrenner. “Robust Population Inversion by Polarization Selective
Pulsed Excitation.” Scientific Reports 5, no. 1 (2015): 10313. https://doi.org/10.1038/srep10313.'
ieee: D. Mantei et al., “Robust Population Inversion by Polarization Selective
Pulsed Excitation,” Scientific Reports, vol. 5, no. 1, p. 10313, 2015.
mla: Mantei, D., et al. “Robust Population Inversion by Polarization Selective Pulsed
Excitation.” Scientific Reports, vol. 5, no. 1, Springer Nature, 2015,
p. 10313, doi:10.1038/srep10313.
short: D. Mantei, J. Förstner, S. Gordon, Y.A. Leier, A.K. Rai, D. Reuter, A.D.
Wieck, A. Zrenner, Scientific Reports 5 (2015) 10313.
date_created: 2018-08-13T10:34:17Z
date_updated: 2022-01-06T06:59:53Z
ddc:
- '530'
department:
- _id: '61'
- _id: '15'
- _id: '292'
- _id: '290'
doi: 10.1038/srep10313
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-13T10:39:14Z
date_updated: 2018-08-21T11:37:12Z
file_id: '3901'
file_name: 2015-05 Mantei,Förstner,Gordon,Leier,Rai,Reuter,Wieck,Zrenner_Robust
Population Inversion by Polarization Selective Pulsed Excitation.pdf
file_size: 1089911
relation: main_file
file_date_updated: 2018-08-21T11:37:12Z
has_accepted_license: '1'
intvolume: ' 5'
issue: '1'
keyword:
- tet_topic_qd
language:
- iso: eng
license: https://creativecommons.org/licenses/by/4.0/
oa: '1'
page: '10313'
publication: Scientific Reports
publication_identifier:
issn:
- 2045-2322
publication_status: published
publisher: Springer Nature
status: public
title: Robust Population Inversion by Polarization Selective Pulsed Excitation
type: journal_article
urn: '39004'
user_id: '55706'
volume: 5
year: '2015'
...
---
_id: '4024'
abstract:
- lang: eng
text: "We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic
strained cubic AlN layers on \r\n3C-SiC (001) substrates grown by means of molecular
beam epitaxy. Surface morphologies of various QD sizes \r\nand densities were
obtained from uncapped samples by atomic force microscopy. These results were
correlated \r\nwith similar but capped samples by photoluminescence experiments.
The QD density varies by one order of \r\nmagnitude from ~1x10^10 cm^-2 to ~1x10^11
cm^-2 as a function of the GaN coverage on the surface. The initial layer \r\nthickness
for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers
by a comparison \r\nbetween the experimental results and an analytical model.
Our results reveal the strain-driven Stranski-Krastanov \r\ngrowth mode as the
main formation process of the cubic GaN QDs. "
article_type: original
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D. J.
full_name: As, D. J.
last_name: As
citation:
ama: Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots
grown by the Stranski-Krastanov process. physica status solidi (c). 2015;12(4-5):452-455.
doi:10.1002/pssc.201400132
apa: Bürger, M., Lindner, J., Reuter, D., & As, D. J. (2015). Investigation
of cubic GaN quantum dots grown by the Stranski-Krastanov process. Physica
Status Solidi (C), 12(4–5), 452–455. https://doi.org/10.1002/pssc.201400132
bibtex: '@article{Bürger_Lindner_Reuter_As_2015, title={Investigation of cubic GaN
quantum dots grown by the Stranski-Krastanov process}, volume={12}, DOI={10.1002/pssc.201400132},
number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Bürger,
M. and Lindner, Jörg and Reuter, Dirk and As, D. J.}, year={2015}, pages={452–455}
}'
chicago: 'Bürger, M., Jörg Lindner, Dirk Reuter, and D. J. As. “Investigation of
Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” Physica Status
Solidi (C) 12, no. 4–5 (2015): 452–55. https://doi.org/10.1002/pssc.201400132.'
ieee: M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN
quantum dots grown by the Stranski-Krastanov process,” physica status solidi
(c), vol. 12, no. 4–5, pp. 452–455, 2015.
mla: Bürger, M., et al. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov
Process.” Physica Status Solidi (C), vol. 12, no. 4–5, Wiley, 2015, pp.
452–55, doi:10.1002/pssc.201400132.
short: M. Bürger, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (C) 12 (2015)
452–455.
date_created: 2018-08-21T13:07:35Z
date_updated: 2022-01-06T07:00:08Z
ddc:
- '530'
department:
- _id: '286'
- _id: '292'
- _id: '15'
doi: 10.1002/pssc.201400132
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-21T13:10:09Z
date_updated: 2018-08-21T13:10:09Z
file_id: '4025'
file_name: Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov
process.pdf
file_size: 650052
relation: main_file
success: 1
file_date_updated: 2018-08-21T13:10:09Z
has_accepted_license: '1'
intvolume: ' 12'
issue: 4-5
language:
- iso: eng
page: 452-455
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process
type: journal_article
user_id: '42514'
volume: 12
year: '2015'
...
---
_id: '4061'
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D.J.
full_name: As, D.J.
last_name: As
citation:
ama: 'Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots
grown by the Stranski-Krastanov process. In: ; 2014.'
apa: Bürger, M., Lindner, J., Reuter, D., & As, D. J. (2014). Investigation
of cubic GaN quantum dots grown by the Stranski-Krastanov process. Presented at
the European Materials Research Society Spring Meeting 2014, Lille (France).
bibtex: '@inproceedings{Bürger_Lindner_Reuter_As_2014, title={Investigation of cubic
GaN quantum dots grown by the Stranski-Krastanov process}, author={Bürger, M.
and Lindner, Jörg and Reuter, Dirk and As, D.J.}, year={2014} }'
chicago: Bürger, M., Jörg Lindner, Dirk Reuter, and D.J. As. “Investigation of Cubic
GaN Quantum Dots Grown by the Stranski-Krastanov Process,” 2014.
ieee: M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN
quantum dots grown by the Stranski-Krastanov process,” presented at the European
Materials Research Society Spring Meeting 2014, Lille (France), 2014.
mla: Bürger, M., et al. Investigation of Cubic GaN Quantum Dots Grown by the
Stranski-Krastanov Process. 2014.
short: 'M. Bürger, J. Lindner, D. Reuter, D.J. As, in: 2014.'
conference:
end_date: 2014-05-30
location: Lille (France)
name: European Materials Research Society Spring Meeting 2014
start_date: 2014-05-26
date_created: 2018-08-22T12:11:40Z
date_updated: 2022-01-06T07:00:11Z
department:
- _id: '15'
- _id: '286'
- _id: '292'
language:
- iso: eng
status: public
title: Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process
type: conference
user_id: '55706'
year: '2014'
...
---
_id: '3963'
abstract:
- lang: eng
text: "Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk
resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding
microdisks were patterned by means of electron beam lithography and a two step
reactive ion etching process. Micro-photoluminescence spectroscopy investigations
were performed for optical characterization. We analyzed the mode spacing for
disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional
finite difference time domain calculations were in good agreement\r\nwith the
experimental data. Whispering gallery modes of the radial orders 1 and 2 were
identified by means of simulated mode field distributions."
article_type: original
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: S.
full_name: Declair, S.
last_name: Declair
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery
modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied
Physics Letters. 2013;102(8):081105. doi:10.1063/1.4793653
apa: Bürger, M., Ruth, M., Declair, S., Förstner, J., Meier, C., & As, D. J.
(2013). Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots. Applied Physics Letters, 102(8), 081105. https://doi.org/10.1063/1.4793653
bibtex: '@article{Bürger_Ruth_Declair_Förstner_Meier_As_2013, title={Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots},
volume={102}, DOI={10.1063/1.4793653},
number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bürger,
M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat
Josef}, year={2013}, pages={081105} }'
chicago: 'Bürger, M., M. Ruth, S. Declair, Jens Förstner, Cedrik Meier, and Donat
Josef As. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar
GaN Quantum Dots.” Applied Physics Letters 102, no. 8 (2013): 081105. https://doi.org/10.1063/1.4793653.'
ieee: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,”
Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013.
mla: Bürger, M., et al. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks
Containing Non-Polar GaN Quantum Dots.” Applied Physics Letters, vol. 102,
no. 8, AIP Publishing, 2013, p. 081105, doi:10.1063/1.4793653.
short: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics
Letters 102 (2013) 081105.
date_created: 2018-08-21T07:43:22Z
date_updated: 2022-01-06T07:00:01Z
ddc:
- '530'
department:
- _id: '15'
- _id: '287'
- _id: '284'
- _id: '230'
- _id: '35'
doi: 10.1063/1.4793653
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-21T07:47:02Z
date_updated: 2018-09-04T20:08:52Z
file_id: '3964'
file_name: 2013-02 Bürger,Ruth,Declair,Förstner,Meier,As_Whispering gallery modes
in zinc-blende AlN microdisks containing non-polar GaN quantum dots.pdf
file_size: 935911
relation: main_file
file_date_updated: 2018-09-04T20:08:52Z
has_accepted_license: '1'
intvolume: ' 102'
issue: '8'
keyword:
- tet_topic_qd
- tet_topic_microdisk
language:
- iso: eng
oa: '1'
page: '081105'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots
type: journal_article
urn: '39635'
user_id: '14'
volume: 102
year: '2013'
...
---
_id: '13568'
author:
- first_name: C.
full_name: Mietze, C.
last_name: Mietze
- first_name: M.
full_name: Landmann, M.
last_name: Landmann
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: H.
full_name: Machhadani, H.
last_name: Machhadani
- first_name: S.
full_name: Sakr, S.
last_name: Sakr
- first_name: M.
full_name: Tchernycheva, M.
last_name: Tchernycheva
- first_name: F. H.
full_name: Julien, F. H.
last_name: Julien
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Mietze C, Landmann M, Rauls E, et al. Band offsets in cubic GaN/AlN superlattices.
Physical Review B. 2011;83(19). doi:10.1103/physrevb.83.195301
apa: Mietze, C., Landmann, M., Rauls, E., Machhadani, H., Sakr, S., Tchernycheva,
M., Julien, F. H., Schmidt, W. G., Lischka, K., & As, D. J. (2011). Band offsets
in cubic GaN/AlN superlattices. Physical Review B, 83(19). https://doi.org/10.1103/physrevb.83.195301
bibtex: '@article{Mietze_Landmann_Rauls_Machhadani_Sakr_Tchernycheva_Julien_Schmidt_Lischka_As_2011,
title={Band offsets in cubic GaN/AlN superlattices}, volume={83}, DOI={10.1103/physrevb.83.195301},
number={19}, journal={Physical Review B}, author={Mietze, C. and Landmann, M.
and Rauls, E. and Machhadani, H. and Sakr, S. and Tchernycheva, M. and Julien,
F. H. and Schmidt, Wolf Gero and Lischka, K. and As, Donat Josef}, year={2011}
}'
chicago: Mietze, C., M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva,
F. H. Julien, Wolf Gero Schmidt, K. Lischka, and Donat Josef As. “Band Offsets
in Cubic GaN/AlN Superlattices.” Physical Review B 83, no. 19 (2011). https://doi.org/10.1103/physrevb.83.195301.
ieee: 'C. Mietze et al., “Band offsets in cubic GaN/AlN superlattices,” Physical
Review B, vol. 83, no. 19, 2011, doi: 10.1103/physrevb.83.195301.'
mla: Mietze, C., et al. “Band Offsets in Cubic GaN/AlN Superlattices.” Physical
Review B, vol. 83, no. 19, 2011, doi:10.1103/physrevb.83.195301.
short: C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva,
F.H. Julien, W.G. Schmidt, K. Lischka, D.J. As, Physical Review B 83 (2011).
date_created: 2019-10-01T09:11:23Z
date_updated: 2025-12-05T10:41:18Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '284'
- _id: '35'
- _id: '230'
- _id: '27'
doi: 10.1103/physrevb.83.195301
intvolume: ' 83'
issue: '19'
language:
- iso: eng
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Band offsets in cubic GaN/AlN superlattices
type: journal_article
user_id: '16199'
volume: 83
year: '2011'
...
---
_id: '13835'
author:
- first_name: A.
full_name: Scholle, A.
last_name: Scholle
- first_name: S.
full_name: Greulich-Weber, S.
last_name: Greulich-Weber
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Ch.
full_name: Mietze, Ch.
last_name: Mietze
- first_name: N. T.
full_name: Son, N. T.
last_name: Son
- first_name: C.
full_name: Hemmingsson, C.
last_name: Hemmingsson
- first_name: B.
full_name: Monemar, B.
last_name: Monemar
- first_name: E.
full_name: Janzén, E.
last_name: Janzén
- first_name: Uwe
full_name: Gerstmann, Uwe
id: '171'
last_name: Gerstmann
orcid: 0000-0002-4476-223X
- first_name: S.
full_name: Sanna, S.
last_name: Sanna
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: Scholle A, Greulich-Weber S, As DJ, et al. Magnetic characterization of conductance
electrons in GaN. physica status solidi (b). 2010;247(7):1728-1731. doi:10.1002/pssb.200983582
apa: Scholle, A., Greulich-Weber, S., As, D. J., Mietze, Ch., Son, N. T., Hemmingsson,
C., Monemar, B., Janzén, E., Gerstmann, U., Sanna, S., Rauls, E., & Schmidt,
W. G. (2010). Magnetic characterization of conductance electrons in GaN. Physica
Status Solidi (b), 247(7), 1728–1731. https://doi.org/10.1002/pssb.200983582
bibtex: '@article{Scholle_Greulich-Weber_As_Mietze_Son_Hemmingsson_Monemar_Janzén_Gerstmann_Sanna_et
al._2010, title={Magnetic characterization of conductance electrons in GaN}, volume={247},
DOI={10.1002/pssb.200983582},
number={7}, journal={physica status solidi (b)}, author={Scholle, A. and Greulich-Weber,
S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and
Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and et al.}, year={2010},
pages={1728–1731} }'
chicago: 'Scholle, A., S. Greulich-Weber, Donat Josef As, Ch. Mietze, N. T. Son,
C. Hemmingsson, B. Monemar, et al. “Magnetic Characterization of Conductance Electrons
in GaN.” Physica Status Solidi (b) 247, no. 7 (2010): 1728–31. https://doi.org/10.1002/pssb.200983582.'
ieee: 'A. Scholle et al., “Magnetic characterization of conductance electrons
in GaN,” physica status solidi (b), vol. 247, no. 7, pp. 1728–1731, 2010,
doi: 10.1002/pssb.200983582.'
mla: Scholle, A., et al. “Magnetic Characterization of Conductance Electrons in
GaN.” Physica Status Solidi (b), vol. 247, no. 7, 2010, pp. 1728–31, doi:10.1002/pssb.200983582.
short: A. Scholle, S. Greulich-Weber, D.J. As, Ch. Mietze, N.T. Son, C. Hemmingsson,
B. Monemar, E. Janzén, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt, Physica
Status Solidi (b) 247 (2010) 1728–1731.
date_created: 2019-10-15T07:40:58Z
date_updated: 2025-12-16T07:46:59Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '284'
- _id: '790'
- _id: '35'
- _id: '230'
doi: 10.1002/pssb.200983582
funded_apc: '1'
intvolume: ' 247'
issue: '7'
language:
- iso: eng
page: 1728-1731
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Magnetic characterization of conductance electrons in GaN
type: journal_article
user_id: '16199'
volume: 247
year: '2010'
...
---
_id: '4123'
abstract:
- lang: eng
text: GaAs-based semiconductor microdisks with high quality whispering gallery modes
(Q44000) have been fabricated.A layer of self-organized InAs quantumdots (QDs)
served as a light source to feed the optical modes at room temperature. In order
to achieve frequency tuning of the optical modes, the microdisk devices have been
immersed in 4 – cyano – 4´-pentylbiphenyl (5CB), a liquid crystal(LC) with a nematic
phase below the clearing temperature of TC≈34°C .We have studied the device performance
in the temperature rangeof T=20-50°C, in order to investigate the influence of
the nematic–isotropic phase transition on the optical modes. Moreover,we havea
pplied an AC electric field to the device,which leads in the nematic phase to
a reorientation of the anisotropic dielectric tensor of the liquid crystal.This
electrical anisotropy can be used to achieve electrical tunability of the optical
modes.Using the finite-difference time domain (FDTD) technique with an anisotropic
material model, we are able to describe the influence of the liquid crystal qualitatively.
article_type: original
author:
- first_name: Karoline A.
full_name: Piegdon, Karoline A.
last_name: Piegdon
- first_name: Matthias
full_name: Offer, Matthias
last_name: Offer
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Martin
full_name: Urbanski, Martin
last_name: Urbanski
- first_name: Andreas
full_name: Hoischen, Andreas
last_name: Hoischen
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Stefan
full_name: Declair, Stefan
last_name: Declair
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: 'Piegdon KA, Offer M, Lorke A, et al. Self-assembled quantum dots in a liquid-crystal-tunable
microdisk resonator. Physica E: Low-dimensional Systems and Nanostructures.
2010;42(10):2552-2555. doi:10.1016/j.physe.2009.12.051'
apa: 'Piegdon, K. A., Offer, M., Lorke, A., Urbanski, M., Hoischen, A., Kitzerow,
H.-S., Declair, S., Förstner, J., Meier, T., Reuter, D., Wieck, A. D., & Meier,
C. (2010). Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator.
Physica E: Low-Dimensional Systems and Nanostructures, 42(10), 2552–2555.
https://doi.org/10.1016/j.physe.2009.12.051'
bibtex: '@article{Piegdon_Offer_Lorke_Urbanski_Hoischen_Kitzerow_Declair_Förstner_Meier_Reuter_et
al._2010, title={Self-assembled quantum dots in a liquid-crystal-tunable microdisk
resonator}, volume={42}, DOI={10.1016/j.physe.2009.12.051},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Piegdon, Karoline A. and Offer, Matthias and
Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried
and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and
et al.}, year={2010}, pages={2552–2555} }'
chicago: 'Piegdon, Karoline A., Matthias Offer, Axel Lorke, Martin Urbanski, Andreas
Hoischen, Heinz-Siegfried Kitzerow, Stefan Declair, et al. “Self-Assembled Quantum
Dots in a Liquid-Crystal-Tunable Microdisk Resonator.” Physica E: Low-Dimensional
Systems and Nanostructures 42, no. 10 (2010): 2552–55. https://doi.org/10.1016/j.physe.2009.12.051.'
ieee: 'K. A. Piegdon et al., “Self-assembled quantum dots in a liquid-crystal-tunable
microdisk resonator,” Physica E: Low-dimensional Systems and Nanostructures,
vol. 42, no. 10, pp. 2552–2555, 2010, doi: 10.1016/j.physe.2009.12.051.'
mla: 'Piegdon, Karoline A., et al. “Self-Assembled Quantum Dots in a Liquid-Crystal-Tunable
Microdisk Resonator.” Physica E: Low-Dimensional Systems and Nanostructures,
vol. 42, no. 10, Elsevier BV, 2010, pp. 2552–55, doi:10.1016/j.physe.2009.12.051.'
short: 'K.A. Piegdon, M. Offer, A. Lorke, M. Urbanski, A. Hoischen, H.-S. Kitzerow,
S. Declair, J. Förstner, T. Meier, D. Reuter, A.D. Wieck, C. Meier, Physica E:
Low-Dimensional Systems and Nanostructures 42 (2010) 2552–2555.'
date_created: 2018-08-27T10:03:35Z
date_updated: 2025-12-16T11:32:03Z
ddc:
- '530'
department:
- _id: '15'
- _id: '230'
- _id: '2'
- _id: '293'
- _id: '292'
- _id: '35'
- _id: '287'
- _id: '313'
- _id: '170'
doi: 10.1016/j.physe.2009.12.051
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T10:06:57Z
date_updated: 2018-08-27T10:06:57Z
file_id: '4124'
file_name: 2010 Piegdon,Offer,Lork,Urbanski,Hoischen,Kitzerwo, Declair,Förstner_Self-assembled
quantum dots in a liquid-crystal-tunable microdisk resonator.pdf
file_size: 403248
relation: main_file
success: 1
file_date_updated: 2018-08-27T10:06:57Z
has_accepted_license: '1'
intvolume: ' 42'
issue: '10'
keyword:
- tet_topic_qd
- tet_topic_microdisk
language:
- iso: eng
page: 2552-2555
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator
type: journal_article
user_id: '16199'
volume: 42
year: '2010'
...
---
_id: '4172'
abstract:
- lang: eng
text: "Microdisks made from GaAs with embedded InAs quantum dots are immersed in
the liquid crystal 4-cyano-4’-pentylbiphenyl (5CB). The quantum dots serve as
emitters feeding the optical modes of the photonic cavity. By changing temperature,
the liquid crystal undergoes a phase transition from the isotropic to the nematic
state, which can be used\r\nas an effective tuning mechanism of the photonic modes
of the cavity. In the nematic state, the uniaxial electrical anisotropy of the
liquid crystal molecules can be exploited for orienting the material in an electric
field,\r\nthus externally controlling the birefringence of the material. Using
this effect, an electric field induced tuning of the modes is achieved. Numerical
simulations using the finite-differences time-domain (FDTD) technique\r\nemploying
an anisotropic dielectric medium allow to understand the alignment of the liquid
crystal molecules on the surface of the microdisk resonator."
article_number: '7946'
article_type: original
author:
- first_name: Karoline A.
full_name: Piegdon, Karoline A.
last_name: Piegdon
- first_name: Stefan
full_name: Declair, Stefan
last_name: Declair
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Heiner
full_name: Matthias, Heiner
last_name: Matthias
- first_name: Martin
full_name: Urbanski, Martin
last_name: Urbanski
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Piegdon KA, Declair S, Förstner J, et al. Tuning quantum-dot based photonic
devices with liquid crystals. Optics Express. 2010;18(8). doi:10.1364/oe.18.007946
apa: Piegdon, K. A., Declair, S., Förstner, J., Meier, T., Matthias, H., Urbanski,
M., Kitzerow, H.-S., Reuter, D., Wieck, A. D., Lorke, A., & Meier, C. (2010).
Tuning quantum-dot based photonic devices with liquid crystals. Optics Express,
18(8), Article 7946. https://doi.org/10.1364/oe.18.007946
bibtex: '@article{Piegdon_Declair_Förstner_Meier_Matthias_Urbanski_Kitzerow_Reuter_Wieck_Lorke_et
al._2010, title={Tuning quantum-dot based photonic devices with liquid crystals},
volume={18}, DOI={10.1364/oe.18.007946},
number={87946}, journal={Optics Express}, publisher={The Optical Society}, author={Piegdon,
Karoline A. and Declair, Stefan and Förstner, Jens and Meier, Torsten and Matthias,
Heiner and Urbanski, Martin and Kitzerow, Heinz-Siegfried and Reuter, Dirk and
Wieck, Andreas D. and Lorke, Axel and et al.}, year={2010} }'
chicago: Piegdon, Karoline A., Stefan Declair, Jens Förstner, Torsten Meier, Heiner
Matthias, Martin Urbanski, Heinz-Siegfried Kitzerow, et al. “Tuning Quantum-Dot
Based Photonic Devices with Liquid Crystals.” Optics Express 18, no. 8
(2010). https://doi.org/10.1364/oe.18.007946.
ieee: 'K. A. Piegdon et al., “Tuning quantum-dot based photonic devices with
liquid crystals,” Optics Express, vol. 18, no. 8, Art. no. 7946, 2010,
doi: 10.1364/oe.18.007946.'
mla: Piegdon, Karoline A., et al. “Tuning Quantum-Dot Based Photonic Devices with
Liquid Crystals.” Optics Express, vol. 18, no. 8, 7946, The Optical Society,
2010, doi:10.1364/oe.18.007946.
short: K.A. Piegdon, S. Declair, J. Förstner, T. Meier, H. Matthias, M. Urbanski,
H.-S. Kitzerow, D. Reuter, A.D. Wieck, A. Lorke, C. Meier, Optics Express 18 (2010).
date_created: 2018-08-28T08:50:06Z
date_updated: 2025-12-16T16:44:44Z
ddc:
- '530'
department:
- _id: '15'
- _id: '287'
- _id: '293'
- _id: '292'
- _id: '35'
- _id: '230'
- _id: '313'
- _id: '170'
- _id: '27'
- _id: '34'
- _id: '61'
doi: 10.1364/oe.18.007946
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T08:52:50Z
date_updated: 2018-09-04T20:02:01Z
file_id: '4173'
file_name: 2010 Piegdon,Declair,Förstner,Meier T,Matthias,Urbanski,Kitzerow,Reuter,Wieck,Lorcke,Meier
C_Tuning quantum-dot based photonic devices with liquid crystals.pdf
file_size: 627755
relation: main_file
file_date_updated: 2018-09-04T20:02:01Z
has_accepted_license: '1'
intvolume: ' 18'
issue: '8'
keyword:
- tet_topic_qd
- tet_topic_microdisk
language:
- iso: eng
oa: '1'
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
- _id: '52'
name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: Optics Express
publication_identifier:
issn:
- 1094-4087
publication_status: published
publisher: The Optical Society
status: public
title: Tuning quantum-dot based photonic devices with liquid crystals
type: journal_article
urn: '41725'
user_id: '16199'
volume: 18
year: '2010'
...
---
_id: '4218'
abstract:
- lang: eng
text: 'In this work we focus on the fabrication of ohmic contacts and of Schottky
barrier devices (SBD) on non-polar cubic GaN epilayers grown by molecular beam
epitaxy (MBE). A Ti/Al/Ni/Au metallization was used for ohmic contacts and the
contact resistance was measured by transmission line measurements (TLM). Ni, Pd,
Ag and NiSi Schottky barrier devices 300 µm in diameter were fabricated by thermal
evaporation using contact lithography on cubic GaN epilayers. The current-voltage
(I-V) and the capacity-voltage (C-V) characteristics were studied at room temperature
in detail. A clear rectifying behavior was measured in all SBDs. In the Ni and
Ag SBDs an abnormal large leakage current under reverse bias was observed. Isochronal
thermal annealing of these Ni and Ag based SBDs at 200°C in air improved the reverse
characteristics by up to three orders of magnitude. This is in contrast to the
Pd contacts, where the as grown contact showed already good performance and thermal
annealing had nearly no influence on the I-V characteristics. For all SBDs the
magnitude of the reverse current is generally larger than that expected due to
thermionic emission and an exponential increase of the reverse current is observed
with increasing reverse voltage. In-depth analysis of the I-V characteristic showed
that a thin surface barrier is formed at the metal semiconductor interface and
that crystal defects like dislocations may be the reasons for the discrepancy
between experimental data and thermionic emission theory. '
author:
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Elena
full_name: Tschumak, Elena
last_name: Tschumak
- first_name: Irina
full_name: Laubenstein, Irina
last_name: Laubenstein
- first_name: Ricarda M.
full_name: Kemper, Ricarda M.
last_name: Kemper
- first_name: Klaus
full_name: Lischka, Klaus
last_name: Lischka
citation:
ama: 'As DJ, Tschumak E, Laubenstein I, Kemper RM, Lischka K. Schottky and Ohmic
Contacts on Non-Polar Cubic GaN Epilayers. In: Materials Research Society Symposium
Proceedings. Vol 1108. Materials Research Society; 2009:3-8. doi:10.1557/proc-1108-a01-02'
apa: As, D. J., Tschumak, E., Laubenstein, I., Kemper, R. M., & Lischka, K.
(2009). Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers. Materials
Research Society Symposium Proceedings, 1108, 3–8. https://doi.org/10.1557/proc-1108-a01-02
bibtex: '@inproceedings{As_Tschumak_Laubenstein_Kemper_Lischka_2009, title={Schottky
and Ohmic Contacts on Non-Polar Cubic GaN Epilayers}, volume={1108}, DOI={10.1557/proc-1108-a01-02},
booktitle={Materials Research Society Symposium Proceedings}, publisher={Materials
Research Society}, author={As, Donat J. and Tschumak, Elena and Laubenstein, Irina
and Kemper, Ricarda M. and Lischka, Klaus}, year={2009}, pages={3–8} }'
chicago: As, Donat J., Elena Tschumak, Irina Laubenstein, Ricarda M. Kemper, and
Klaus Lischka. “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers.”
In Materials Research Society Symposium Proceedings, 1108:3–8. Materials
Research Society, 2009. https://doi.org/10.1557/proc-1108-a01-02.
ieee: 'D. J. As, E. Tschumak, I. Laubenstein, R. M. Kemper, and K. Lischka, “Schottky
and Ohmic Contacts on Non-Polar Cubic GaN Epilayers,” in Materials Research
Society Symposium Proceedings, 2009, vol. 1108, pp. 3–8, doi: 10.1557/proc-1108-a01-02.'
mla: As, Donat J., et al. “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers.”
Materials Research Society Symposium Proceedings, vol. 1108, Materials
Research Society, 2009, pp. 3–8, doi:10.1557/proc-1108-a01-02.
short: 'D.J. As, E. Tschumak, I. Laubenstein, R.M. Kemper, K. Lischka, in: Materials
Research Society Symposium Proceedings, Materials Research Society, 2009, pp.
3–8.'
date_created: 2018-08-28T12:57:35Z
date_updated: 2023-10-09T09:12:30Z
department:
- _id: '15'
- _id: '284'
doi: 10.1557/proc-1108-a01-02
intvolume: ' 1108'
language:
- iso: eng
page: 3-8
publication: Materials Research Society Symposium Proceedings
publication_status: published
publisher: Materials Research Society
status: public
title: Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers
type: conference
user_id: '14931'
volume: 1108
year: '2009'
...