@article{39919,
  author       = {{Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{289--292}},
  publisher    = {{Elsevier BV}},
  title        = {{{A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}}},
  doi          = {{10.1016/0167-9317(91)90231-2}},
  volume       = {{15}},
  year         = {{2002}},
}

@article{39926,
  author       = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}},
  issn         = {{0272-1732}},
  journal      = {{IEEE Micro}},
  keywords     = {{Electrical and Electronic Engineering, Hardware and Architecture, Software}},
  number       = {{6}},
  pages        = {{28--44}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{VLSI technologies for artificial neural networks}}},
  doi          = {{10.1109/40.42985}},
  volume       = {{9}},
  year         = {{2002}},
}

@inproceedings{39892,
  author       = {{Blum, F. and Denisenko, A. and Job, R. and Borchert, D. and Weber, W. and Borany, J.V. and Hilleringmann, Ulrich and Fahrner, W.R.}},
  booktitle    = {{IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)}},
  publisher    = {{IEEE}},
  title        = {{{Nuclear radiation detectors on various type diamonds}}},
  doi          = {{10.1109/iecon.1998.724097}},
  year         = {{2002}},
}

@article{39920,
  author       = {{Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{633--636}},
  publisher    = {{Elsevier BV}},
  title        = {{{Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}}},
  doi          = {{10.1016/0167-9317(91)90299-s}},
  volume       = {{15}},
  year         = {{2002}},
}

@article{39915,
  author       = {{Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{211--214}},
  publisher    = {{Elsevier BV}},
  title        = {{{Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}}},
  doi          = {{10.1016/0167-9317(92)90425-q}},
  volume       = {{19}},
  year         = {{2002}},
}

@article{39916,
  author       = {{Adams, S. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{191--194}},
  publisher    = {{Elsevier BV}},
  title        = {{{CMOS compatible micromachining by dry silicon-etching techniques}}},
  doi          = {{10.1016/0167-9317(92)90420-v}},
  volume       = {{19}},
  year         = {{2002}},
}

@article{39348,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}},
  issn         = {{0018-9383}},
  journal      = {{IEEE Transactions on Electron Devices}},
  keywords     = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}},
  number       = {{1}},
  pages        = {{299--306}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{Matching analysis of deposition defined 50-nm MOSFET's}}},
  doi          = {{10.1109/16.658845}},
  volume       = {{45}},
  year         = {{2002}},
}

@inproceedings{39923,
  author       = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U.}},
  booktitle    = {{[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications}},
  publisher    = {{IEEE Comput. Soc. Press}},
  title        = {{{Applications and implementations of neural networks in microelectronics-overview and status}}},
  doi          = {{10.1109/cmpeur.1991.257442}},
  year         = {{2002}},
}

@article{39889,
  author       = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{413--417}},
  publisher    = {{Elsevier BV}},
  title        = {{{12 kV low current cascaded light triggered switch on one silicon chip}}},
  doi          = {{10.1016/s0167-9317(99)00122-7}},
  volume       = {{46}},
  year         = {{2002}},
}

@article{39891,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}},
  issn         = {{0018-9383}},
  journal      = {{IEEE Transactions on Electron Devices}},
  keywords     = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}},
  number       = {{1}},
  pages        = {{299--306}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{Matching analysis of deposition defined 50-nm MOSFET's}}},
  doi          = {{10.1109/16.658845}},
  volume       = {{45}},
  year         = {{2002}},
}

@article{39886,
  author       = {{Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}},
  issn         = {{0038-1101}},
  journal      = {{Solid-State Electronics}},
  keywords     = {{Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials}},
  number       = {{7}},
  pages        = {{1245--1250}},
  publisher    = {{Elsevier BV}},
  title        = {{{Mesoscopic transport phenomena in ultrashort channel MOSFETs}}},
  doi          = {{10.1016/s0038-1101(99)00060-x}},
  volume       = {{43}},
  year         = {{2002}},
}

@article{39876,
  author       = {{Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}},
  issn         = {{0925-9635}},
  journal      = {{Diamond and Related Materials}},
  keywords     = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}},
  number       = {{3-7}},
  pages        = {{511--514}},
  publisher    = {{Elsevier BV}},
  title        = {{{Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}}},
  doi          = {{10.1016/s0925-9635(01)00373-9}},
  volume       = {{10}},
  year         = {{2002}},
}

@article{39877,
  author       = {{Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{569--572}},
  publisher    = {{Elsevier BV}},
  title        = {{{A structure definition technique for 25 nm lines of silicon and related materials}}},
  doi          = {{10.1016/s0167-9317(00)00380-4}},
  volume       = {{53}},
  year         = {{2002}},
}

@article{39874,
  author       = {{Otterbach, R. and Hilleringmann, Ulrich}},
  issn         = {{0925-9635}},
  journal      = {{Diamond and Related Materials}},
  keywords     = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}},
  number       = {{3-6}},
  pages        = {{841--844}},
  publisher    = {{Elsevier BV}},
  title        = {{{Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}}},
  doi          = {{10.1016/s0925-9635(01)00703-8}},
  volume       = {{11}},
  year         = {{2002}},
}

@inbook{39875,
  abstract     = {{Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen.}},
  author       = {{Hilleringmann, Ulrich}},
  booktitle    = {{Silizium-Halbleitertechnologie}},
  isbn         = {{978-3-322-94119-0}},
  pages        = {{131–151}},
  publisher    = {{Vieweg+Teubner Verlag}},
  title        = {{{Metallisierung und Kontakte}}},
  doi          = {{10.1007/978-3-322-94119-0_8}},
  year         = {{2002}},
}

@inproceedings{39884,
  author       = {{Hilleringmann, Ulrich and Vieregge, T and Horstmann, JT}},
  booktitle    = {{Proceedings Micro. tec}},
  pages        = {{49–53}},
  title        = {{{Nanometer Scale Lateral Structures of MOS Type Layers}}},
  year         = {{2000}},
}

@inproceedings{39890,
  author       = {{Otterbach, R. and Hilleringmann, Ulrich}},
  booktitle    = {{29th European Solid-State Device Research Conference}},
  pages        = {{320--323}},
  title        = {{{High rate CVD-diamond etching for high temperature pressure sensor applications}}},
  volume       = {{1}},
  year         = {{1999}},
}

@inproceedings{39893,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}},
  booktitle    = {{28th European Solid-State Device Research Conference}},
  pages        = {{512--515}},
  title        = {{{Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors}}},
  year         = {{1998}},
}

@article{39896,
  author       = {{Heinrich, L.M.H. and Muller, J. and Hilleringmann, Ulrich and Goser, K.F. and Holmes, A. and Hwang, Do-Hoon and Stern, R.}},
  journal      = {{IEEE Transactions on Electron Devices}},
  number       = {{8}},
  pages        = {{1249--1252}},
  title        = {{{CMOS-compatible organic light-emitting diodes}}},
  doi          = {{10.1109/16.605463}},
  volume       = {{44}},
  year         = {{1997}},
}

@inproceedings{39902,
  author       = {{Muller, J. and Wirth, G. and Hilleringmann, Ulrich and Goser, K.}},
  booktitle    = {{ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference}},
  pages        = {{947--950}},
  title        = {{{Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission}}},
  year         = {{1996}},
}