[{"editor":[{"first_name":"Zhenan","full_name":"Bao, Zhenan","last_name":"Bao"},{"first_name":"David J.","full_name":"Gundlach, David J.","last_name":"Gundlach"}],"status":"public","type":"conference","publication":"SPIE Proceedings","language":[{"iso":"eng"}],"_id":"39835","user_id":"20179","department":[{"_id":"59"}],"year":"2005","citation":{"ama":"Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. <i>SPIE Proceedings</i>. SPIE; 2005. doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>","ieee":"R. Scholz <i>et al.</i>, “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,” in <i>SPIE Proceedings</i>, 2005, doi: <a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","chicago":"Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera, D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” In <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach. SPIE, 2005. <a href=\"https://doi.org/10.1117/12.617004\">https://doi.org/10.1117/12.617004</a>.","apa":"Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L., Zahn, D. R. T., Pannemann, C., &#38; Hilleringmann, U. (2005). Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In Z. Bao &#38; D. J. Gundlach (Eds.), <i>SPIE Proceedings</i>. SPIE. <a href=\"https://doi.org/10.1117/12.617004\">https://doi.org/10.1117/12.617004</a>","mla":"Scholz, R., et al. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach, SPIE, 2005, doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","short":"R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings, SPIE, 2005.","bibtex":"@inproceedings{Scholz_Müller_Müller_Thurzo_Paez_Mancera_Zahn_Pannemann_Hilleringmann_2005, title={Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}, DOI={<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>}, booktitle={SPIE Proceedings}, publisher={SPIE}, author={Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}, editor={Bao, Zhenan and Gundlach, David J.}, year={2005} }"},"publication_status":"published","publication_identifier":{"issn":["0277-786X"]},"title":"Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry","doi":"10.1117/12.617004","publisher":"SPIE","date_updated":"2023-03-22T10:34:27Z","author":[{"full_name":"Scholz, R.","last_name":"Scholz","first_name":"R."},{"last_name":"Müller","full_name":"Müller, A.-D.","first_name":"A.-D."},{"last_name":"Müller","full_name":"Müller, F.","first_name":"F."},{"first_name":"I.","last_name":"Thurzo","full_name":"Thurzo, I."},{"last_name":"Paez","full_name":"Paez, B. A.","first_name":"B. A."},{"full_name":"Mancera, L.","last_name":"Mancera","first_name":"L."},{"first_name":"D. R. T.","last_name":"Zahn","full_name":"Zahn, D. R. T."},{"first_name":"C.","last_name":"Pannemann","full_name":"Pannemann, C."},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"}],"date_created":"2023-01-25T08:20:11Z"},{"type":"conference","publication":"SPIE Proceedings","status":"public","editor":[{"first_name":"Zhenan","full_name":"Bao, Zhenan","last_name":"Bao"},{"first_name":"David J.","full_name":"Gundlach, David J.","last_name":"Gundlach"}],"user_id":"20179","department":[{"_id":"59"}],"_id":"39834","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0277-786X"]},"citation":{"ieee":"R. Scholz <i>et al.</i>, “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,” in <i>SPIE Proceedings</i>, 2005, doi: <a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","chicago":"Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera, D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” In <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach. SPIE, 2005. <a href=\"https://doi.org/10.1117/12.617004\">https://doi.org/10.1117/12.617004</a>.","ama":"Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. <i>SPIE Proceedings</i>. SPIE; 2005. doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>","apa":"Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L., Zahn, D. R. T., Pannemann, C., &#38; Hilleringmann, U. (2005). Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In Z. Bao &#38; D. J. Gundlach (Eds.), <i>SPIE Proceedings</i>. SPIE. <a href=\"https://doi.org/10.1117/12.617004\">https://doi.org/10.1117/12.617004</a>","mla":"Scholz, R., et al. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach, SPIE, 2005, doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","bibtex":"@inproceedings{Scholz_Müller_Müller_Thurzo_Paez_Mancera_Zahn_Pannemann_Hilleringmann_2005, title={Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}, DOI={<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>}, booktitle={SPIE Proceedings}, publisher={SPIE}, author={Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}, editor={Bao, Zhenan and Gundlach, David J.}, year={2005} }","short":"R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings, SPIE, 2005."},"year":"2005","date_created":"2023-01-25T08:19:15Z","author":[{"first_name":"R.","full_name":"Scholz, R.","last_name":"Scholz"},{"first_name":"A.-D.","last_name":"Müller","full_name":"Müller, A.-D."},{"first_name":"F.","last_name":"Müller","full_name":"Müller, F."},{"last_name":"Thurzo","full_name":"Thurzo, I.","first_name":"I."},{"full_name":"Paez, B. A.","last_name":"Paez","first_name":"B. A."},{"first_name":"L.","last_name":"Mancera","full_name":"Mancera, L."},{"last_name":"Zahn","full_name":"Zahn, D. R. T.","first_name":"D. R. T."},{"first_name":"C.","full_name":"Pannemann, C.","last_name":"Pannemann"},{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"}],"publisher":"SPIE","date_updated":"2023-03-22T10:32:51Z","doi":"10.1117/12.617004","title":"Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry"},{"citation":{"apa":"Hilleringmann, U. (2004). Ätztechnik. In <i>Silizium-Halbleitertechnologie</i> (pp. 65–90). Vieweg+Teubner Verlag. <a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">https://doi.org/10.1007/978-3-322-94072-8_5</a>","mla":"Hilleringmann, Ulrich. “Ätztechnik.” <i>Silizium-Halbleitertechnologie</i>, Vieweg+Teubner Verlag, 2004, pp. 65–90, doi:<a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">10.1007/978-3-322-94072-8_5</a>.","short":"U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2004, pp. 65–90.","bibtex":"@inbook{Hilleringmann_2004, place={Wiesbaden}, title={Ätztechnik}, DOI={<a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">10.1007/978-3-322-94072-8_5</a>}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2004}, pages={65–90} }","chicago":"Hilleringmann, Ulrich. “Ätztechnik.” In <i>Silizium-Halbleitertechnologie</i>, 65–90. Wiesbaden: Vieweg+Teubner Verlag, 2004. <a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">https://doi.org/10.1007/978-3-322-94072-8_5</a>.","ieee":"U. Hilleringmann, “Ätztechnik,” in <i>Silizium-Halbleitertechnologie</i>, Wiesbaden: Vieweg+Teubner Verlag, 2004, pp. 65–90.","ama":"Hilleringmann U. Ätztechnik. In: <i>Silizium-Halbleitertechnologie</i>. Vieweg+Teubner Verlag; 2004:65–90. doi:<a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">10.1007/978-3-322-94072-8_5</a>"},"page":"65–90","place":"Wiesbaden","year":"2004","publication_identifier":{"isbn":["978-3-322-94072-8"]},"doi":"10.1007/978-3-322-94072-8_5","title":"Ätztechnik","author":[{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"}],"date_created":"2023-01-25T08:39:18Z","date_updated":"2023-03-21T10:05:00Z","publisher":"Vieweg+Teubner Verlag","status":"public","abstract":[{"text":"In der Halbleitertechnologie werden die Materialien Siliziumdioxid, Siliziumnitrid, Polysilizium, Silizium, Aluminium sowie Wolfram und Titan mit ihren jeweiligen Metallsiliziden geätzt. Die Ätztechnik dient dabei zum ganzflächigen Abtragen eines Materials oder zum Übertragen der Struktur des lithografisch erzeugten Lackmusters in die darunter liegende Schicht. Für diese Aufgabe bieten sich einerseits nasschemische Ätzlösungen an, zum anderen eignen sich speziell entwickelte Trockenätzverfahren zur geforderten präzisen Strukturübertragung vom Lack in das Material.","lang":"eng"}],"type":"book_chapter","publication":"Silizium-Halbleitertechnologie","language":[{"iso":"eng"}],"user_id":"20179","department":[{"_id":"59"}],"_id":"39850"},{"status":"public","editor":[{"last_name":"Zhang","full_name":"Zhang, Guangjun","first_name":"Guangjun"},{"last_name":"Zhao","full_name":"Zhao, Huijie","first_name":"Huijie"},{"first_name":"Zhongyu","full_name":"Wang, Zhongyu","last_name":"Wang"}],"type":"conference","publication":"Fifth International Symposium on Instrumentation and Control Technology","language":[{"iso":"eng"}],"user_id":"20179","department":[{"_id":"59"}],"_id":"39872","citation":{"ieee":"U. Hilleringmann and C. Pannemann, “Imprint structured organic thin film transistors as driving circuit in single-use sensor applications,” in <i>Fifth International Symposium on Instrumentation and Control Technology</i>, 2004, doi: <a href=\"https://doi.org/10.1117/12.521463\">10.1117/12.521463</a>.","chicago":"Hilleringmann, Ulrich, and C. Pannemann. “Imprint Structured Organic Thin Film Transistors as Driving Circuit in Single-Use Sensor Applications.” In <i>Fifth International Symposium on Instrumentation and Control Technology</i>, edited by Guangjun Zhang, Huijie Zhao, and Zhongyu Wang. SPIE, 2004. <a href=\"https://doi.org/10.1117/12.521463\">https://doi.org/10.1117/12.521463</a>.","ama":"Hilleringmann U, Pannemann C. Imprint structured organic thin film transistors as driving circuit in single-use sensor applications. In: Zhang G, Zhao H, Wang Z, eds. <i>Fifth International Symposium on Instrumentation and Control Technology</i>. SPIE; 2004. doi:<a href=\"https://doi.org/10.1117/12.521463\">10.1117/12.521463</a>","apa":"Hilleringmann, U., &#38; Pannemann, C. (2004). Imprint structured organic thin film transistors as driving circuit in single-use sensor applications. In G. Zhang, H. Zhao, &#38; Z. Wang (Eds.), <i>Fifth International Symposium on Instrumentation and Control Technology</i>. SPIE. <a href=\"https://doi.org/10.1117/12.521463\">https://doi.org/10.1117/12.521463</a>","bibtex":"@inproceedings{Hilleringmann_Pannemann_2004, title={Imprint structured organic thin film transistors as driving circuit in single-use sensor applications}, DOI={<a href=\"https://doi.org/10.1117/12.521463\">10.1117/12.521463</a>}, booktitle={Fifth International Symposium on Instrumentation and Control Technology}, publisher={SPIE}, author={Hilleringmann, Ulrich and Pannemann, C.}, editor={Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu}, year={2004} }","short":"U. Hilleringmann, C. Pannemann, in: G. Zhang, H. Zhao, Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004.","mla":"Hilleringmann, Ulrich, and C. Pannemann. “Imprint Structured Organic Thin Film Transistors as Driving Circuit in Single-Use Sensor Applications.” <i>Fifth International Symposium on Instrumentation and Control Technology</i>, edited by Guangjun Zhang et al., SPIE, 2004, doi:<a href=\"https://doi.org/10.1117/12.521463\">10.1117/12.521463</a>."},"year":"2004","publication_status":"published","publication_identifier":{"issn":["0277-786X"]},"doi":"10.1117/12.521463","title":"Imprint structured organic thin film transistors as driving circuit in single-use sensor applications","author":[{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"first_name":"C.","full_name":"Pannemann, C.","last_name":"Pannemann"}],"date_created":"2023-01-25T09:04:07Z","publisher":"SPIE","date_updated":"2023-03-21T10:04:17Z"},{"_id":"39873","department":[{"_id":"59"}],"user_id":"20179","language":[{"iso":"eng"}],"publication":"Fifth International Symposium on Instrumentation and Control Technology","type":"conference","editor":[{"first_name":"Guangjun","last_name":"Zhang","full_name":"Zhang, Guangjun"},{"full_name":"Zhao, Huijie","last_name":"Zhao","first_name":"Huijie"},{"full_name":"Wang, Zhongyu","last_name":"Wang","first_name":"Zhongyu"}],"status":"public","publisher":"SPIE","date_updated":"2023-03-21T10:04:02Z","author":[{"first_name":"Ralf","last_name":"Otterbach","full_name":"Otterbach, Ralf"},{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"}],"date_created":"2023-01-25T09:04:49Z","title":"Piezoresistive pressure sensors in CVD diamond for high-temperature applications","doi":"10.1117/12.521928","publication_identifier":{"issn":["0277-786X"]},"publication_status":"published","year":"2004","citation":{"mla":"Otterbach, Ralf, and Ulrich Hilleringmann. “Piezoresistive Pressure Sensors in CVD Diamond for High-Temperature Applications.” <i>Fifth International Symposium on Instrumentation and Control Technology</i>, edited by Guangjun Zhang et al., SPIE, 2004, doi:<a href=\"https://doi.org/10.1117/12.521928\">10.1117/12.521928</a>.","short":"R. Otterbach, U. Hilleringmann, in: G. Zhang, H. Zhao, Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004.","bibtex":"@inproceedings{Otterbach_Hilleringmann_2004, title={Piezoresistive pressure sensors in CVD diamond for high-temperature applications}, DOI={<a href=\"https://doi.org/10.1117/12.521928\">10.1117/12.521928</a>}, booktitle={Fifth International Symposium on Instrumentation and Control Technology}, publisher={SPIE}, author={Otterbach, Ralf and Hilleringmann, Ulrich}, editor={Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu}, year={2004} }","apa":"Otterbach, R., &#38; Hilleringmann, U. (2004). Piezoresistive pressure sensors in CVD diamond for high-temperature applications. In G. Zhang, H. Zhao, &#38; Z. Wang (Eds.), <i>Fifth International Symposium on Instrumentation and Control Technology</i>. SPIE. <a href=\"https://doi.org/10.1117/12.521928\">https://doi.org/10.1117/12.521928</a>","ama":"Otterbach R, Hilleringmann U. Piezoresistive pressure sensors in CVD diamond for high-temperature applications. In: Zhang G, Zhao H, Wang Z, eds. <i>Fifth International Symposium on Instrumentation and Control Technology</i>. SPIE; 2004. doi:<a href=\"https://doi.org/10.1117/12.521928\">10.1117/12.521928</a>","chicago":"Otterbach, Ralf, and Ulrich Hilleringmann. “Piezoresistive Pressure Sensors in CVD Diamond for High-Temperature Applications.” In <i>Fifth International Symposium on Instrumentation and Control Technology</i>, edited by Guangjun Zhang, Huijie Zhao, and Zhongyu Wang. SPIE, 2004. <a href=\"https://doi.org/10.1117/12.521928\">https://doi.org/10.1117/12.521928</a>.","ieee":"R. Otterbach and U. Hilleringmann, “Piezoresistive pressure sensors in CVD diamond for high-temperature applications,” in <i>Fifth International Symposium on Instrumentation and Control Technology</i>, 2004, doi: <a href=\"https://doi.org/10.1117/12.521928\">10.1117/12.521928</a>."}},{"date_created":"2023-01-25T09:12:16Z","author":[{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"last_name":"Vieregge","full_name":"Vieregge, T.","first_name":"T."},{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."}],"date_updated":"2023-03-21T09:59:07Z","publisher":"IEEE","doi":"10.1109/iecon.1999.822171","title":"Masking and etching of silicon and related materials for geometries down to 25 nm","publication_status":"published","citation":{"apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2003). Masking and etching of silicon and related materials for geometries down to 25 nm. <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. <a href=\"https://doi.org/10.1109/iecon.1999.822171\">https://doi.org/10.1109/iecon.1999.822171</a>","short":"U. Hilleringmann, T. Vieregge, J.T. Horstmann, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003.","bibtex":"@inproceedings{Hilleringmann_Vieregge_Horstmann_2003, title={Masking and etching of silicon and related materials for geometries down to 25 nm}, DOI={<a href=\"https://doi.org/10.1109/iecon.1999.822171\">10.1109/iecon.1999.822171</a>}, booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2003} }","mla":"Hilleringmann, Ulrich, et al. “Masking and Etching of Silicon and Related Materials for Geometries down to 25 Nm.” <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>, IEEE, 2003, doi:<a href=\"https://doi.org/10.1109/iecon.1999.822171\">10.1109/iecon.1999.822171</a>.","ama":"Hilleringmann U, Vieregge T, Horstmann JT. Masking and etching of silicon and related materials for geometries down to 25 nm. In: <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE; 2003. doi:<a href=\"https://doi.org/10.1109/iecon.1999.822171\">10.1109/iecon.1999.822171</a>","chicago":"Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “Masking and Etching of Silicon and Related Materials for Geometries down to 25 Nm.” In <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE, 2003. <a href=\"https://doi.org/10.1109/iecon.1999.822171\">https://doi.org/10.1109/iecon.1999.822171</a>.","ieee":"U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “Masking and etching of silicon and related materials for geometries down to 25 nm,” 2003, doi: <a href=\"https://doi.org/10.1109/iecon.1999.822171\">10.1109/iecon.1999.822171</a>."},"year":"2003","department":[{"_id":"59"}],"user_id":"20179","_id":"39887","language":[{"iso":"eng"}],"publication":"IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)","type":"conference","status":"public"},{"date_updated":"2023-03-21T09:58:50Z","publisher":"IEEE","date_created":"2023-01-25T09:12:46Z","author":[{"first_name":"J.T.","full_name":"Horstmann, J.T.","last_name":"Horstmann"},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"title":"Matching analysis of NMOS-transistors with a channel length down to 30 nm","doi":"10.1109/iecon.1999.822163","publication_status":"published","year":"2003","citation":{"apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2003). Matching analysis of NMOS-transistors with a channel length down to 30 nm. <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. <a href=\"https://doi.org/10.1109/iecon.1999.822163\">https://doi.org/10.1109/iecon.1999.822163</a>","bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_2003, title={Matching analysis of NMOS-transistors with a channel length down to 30 nm}, DOI={<a href=\"https://doi.org/10.1109/iecon.1999.822163\">10.1109/iecon.1999.822163</a>}, booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2003} }","mla":"Horstmann, J. T., et al. “Matching Analysis of NMOS-Transistors with a Channel Length down to 30 Nm.” <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>, IEEE, 2003, doi:<a href=\"https://doi.org/10.1109/iecon.1999.822163\">10.1109/iecon.1999.822163</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003.","ama":"Horstmann JT, Hilleringmann U, Goser K. Matching analysis of NMOS-transistors with a channel length down to 30 nm. In: <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE; 2003. doi:<a href=\"https://doi.org/10.1109/iecon.1999.822163\">10.1109/iecon.1999.822163</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Matching analysis of NMOS-transistors with a channel length down to 30 nm,” 2003, doi: <a href=\"https://doi.org/10.1109/iecon.1999.822163\">10.1109/iecon.1999.822163</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Matching Analysis of NMOS-Transistors with a Channel Length down to 30 Nm.” In <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE, 2003. <a href=\"https://doi.org/10.1109/iecon.1999.822163\">https://doi.org/10.1109/iecon.1999.822163</a>."},"_id":"39888","user_id":"20179","department":[{"_id":"59"}],"language":[{"iso":"eng"}],"type":"conference","publication":"IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)","status":"public"},{"author":[{"first_name":"G.","last_name":"Wirth","full_name":"Wirth, G."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"J.T.","full_name":"Horstmann, J.T.","last_name":"Horstmann"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"date_created":"2023-01-25T09:11:30Z","publisher":"IEEE","date_updated":"2023-03-21T09:59:36Z","doi":"10.1109/iecon.1999.822164","title":"Negative differential resistance in ultrashort bulk MOSFETs","publication_status":"published","citation":{"short":"G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003.","mla":"Wirth, G., et al. “Negative Differential Resistance in Ultrashort Bulk MOSFETs.” <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>, IEEE, 2003, doi:<a href=\"https://doi.org/10.1109/iecon.1999.822164\">10.1109/iecon.1999.822164</a>.","bibtex":"@inproceedings{Wirth_Hilleringmann_Horstmann_Goser_2003, title={Negative differential resistance in ultrashort bulk MOSFETs}, DOI={<a href=\"https://doi.org/10.1109/iecon.1999.822164\">10.1109/iecon.1999.822164</a>}, booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Wirth, G. and Hilleringmann, Ulrich and Horstmann, J.T. and Goser, K.}, year={2003} }","apa":"Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2003). Negative differential resistance in ultrashort bulk MOSFETs. <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. <a href=\"https://doi.org/10.1109/iecon.1999.822164\">https://doi.org/10.1109/iecon.1999.822164</a>","chicago":"Wirth, G., Ulrich Hilleringmann, J.T. Horstmann, and K. Goser. “Negative Differential Resistance in Ultrashort Bulk MOSFETs.” In <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE, 2003. <a href=\"https://doi.org/10.1109/iecon.1999.822164\">https://doi.org/10.1109/iecon.1999.822164</a>.","ieee":"G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Negative differential resistance in ultrashort bulk MOSFETs,” 2003, doi: <a href=\"https://doi.org/10.1109/iecon.1999.822164\">10.1109/iecon.1999.822164</a>.","ama":"Wirth G, Hilleringmann U, Horstmann JT, Goser K. Negative differential resistance in ultrashort bulk MOSFETs. In: <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE; 2003. doi:<a href=\"https://doi.org/10.1109/iecon.1999.822164\">10.1109/iecon.1999.822164</a>"},"year":"2003","department":[{"_id":"59"}],"user_id":"20179","_id":"39885","language":[{"iso":"eng"}],"publication":"IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)","type":"conference","status":"public"},{"language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39851","status":"public","type":"journal_article","publication":"Microelectronic Engineering","doi":"10.1016/s0167-9317(03)00146-1","title":"Nanometer scale organic thin film transistors with Pentacene","date_created":"2023-01-25T08:39:40Z","author":[{"full_name":"Pannemann, Ch.","last_name":"Pannemann","first_name":"Ch."},{"last_name":"Diekmann","full_name":"Diekmann, T.","first_name":"T."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"}],"volume":"67-68","publisher":"Elsevier BV","date_updated":"2023-03-21T10:04:43Z","citation":{"apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2003). Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>, <i>67–68</i>, 845–852. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>","mla":"Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i>, vol. 67–68, Elsevier BV, 2003, pp. 845–52, doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>.","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale organic thin film transistors with Pentacene}, volume={67–68}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852} }","short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852.","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>. 2003;67-68:845-852. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>","chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i> 67–68 (2003): 845–52. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>.","ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic thin film transistors with Pentacene,” <i>Microelectronic Engineering</i>, vol. 67–68, pp. 845–852, 2003, doi: <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>."},"page":"845-852","year":"2003","publication_status":"published","publication_identifier":{"issn":["0167-9317"]}},{"type":"journal_article","publication":"IEEE Transactions on Electron Devices","status":"public","_id":"39904","user_id":"20179","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0018-9383"]},"issue":"5","year":"2002","citation":{"ama":"Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE Transactions on Electron Devices</i>. 2002;42(5):841-846. doi:<a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>","chicago":"Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE Transactions on Electron Devices</i> 42, no. 5 (2002): 841–46. <a href=\"https://doi.org/10.1109/16.381978\">https://doi.org/10.1109/16.381978</a>.","ieee":"U. Hilleringmann and K. Goser, “Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip,” <i>IEEE Transactions on Electron Devices</i>, vol. 42, no. 5, pp. 841–846, 2002, doi: <a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>.","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE Transactions on Electron Devices</i>, <i>42</i>(5), 841–846. <a href=\"https://doi.org/10.1109/16.381978\">https://doi.org/10.1109/16.381978</a>","short":"U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices 42 (2002) 841–846.","bibtex":"@article{Hilleringmann_Goser_2002, title={Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip}, volume={42}, DOI={<a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>}, number={5}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={841–846} }","mla":"Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE Transactions on Electron Devices</i>, vol. 42, no. 5, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 841–46, doi:<a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>."},"page":"841-846","intvolume":"        42","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:51:52Z","date_created":"2023-01-25T09:22:34Z","author":[{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"volume":42,"title":"Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip","doi":"10.1109/16.381978"},{"year":"2002","issue":"1-4","title":"Characterization of submicron NMOS devices due to visible light emission","publisher":"Elsevier BV","date_created":"2023-01-25T09:26:21Z","publication":"Microelectronic Engineering","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"citation":{"apa":"Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>, <i>21</i>(1–4), 363–366. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>","bibtex":"@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }","short":"I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.","mla":"Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","ieee":"I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","chicago":"Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i> 21, no. 1–4 (2002): 363–66. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>.","ama":"Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>. 2002;21(1-4):363-366. doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>"},"page":"363-366","intvolume":"        21","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"doi":"10.1016/0167-9317(93)90092-j","date_updated":"2023-03-21T09:50:03Z","author":[{"first_name":"I.","last_name":"Schönstein","full_name":"Schönstein, I."},{"last_name":"Müller","full_name":"Müller, J.","first_name":"J."},{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"volume":21,"status":"public","type":"journal_article","_id":"39912","user_id":"20179","department":[{"_id":"59"}]},{"intvolume":"        19","page":"211-214","citation":{"apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","doi":"10.1016/0167-9317(92)90425-q","date_updated":"2023-03-21T09:49:25Z","volume":19,"author":[{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"status":"public","type":"journal_article","_id":"39914","department":[{"_id":"59"}],"user_id":"20179","year":"2002","issue":"1-4","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","publisher":"Elsevier BV","date_created":"2023-01-25T09:27:23Z","publication":"Microelectronic Engineering","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}]},{"type":"journal_article","publication":"IEEE Journal of Solid-State Circuits","status":"public","user_id":"20179","department":[{"_id":"59"}],"_id":"39906","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering"],"issue":"8","publication_status":"published","publication_identifier":{"issn":["0018-9200"]},"citation":{"ama":"Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010. doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>","ieee":"E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","chicago":"Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i> 29, no. 8 (2002): 1006–10. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>.","mla":"Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","bibtex":"@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }","short":"E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.","apa":"Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>, <i>29</i>(8), 1006–1010. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>"},"intvolume":"        29","page":"1006-1010","year":"2002","author":[{"full_name":"Brass, E.","last_name":"Brass","first_name":"E."},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"}],"date_created":"2023-01-25T09:23:36Z","volume":29,"date_updated":"2023-03-21T09:51:19Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","doi":"10.1109/4.297714","title":"System integration of optical devices and analog CMOS amplifiers"},{"author":[{"first_name":"E.","last_name":"Brass","full_name":"Brass, E."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"full_name":"Schumacher, K.","last_name":"Schumacher","first_name":"K."}],"date_created":"2023-01-25T09:24:15Z","volume":29,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:51:33Z","doi":"10.1109/4.297714","title":"System integration of optical devices and analog CMOS amplifiers","issue":"8","publication_status":"published","publication_identifier":{"issn":["0018-9200"]},"citation":{"apa":"Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>, <i>29</i>(8), 1006–1010. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>","bibtex":"@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }","mla":"Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","short":"E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.","ieee":"E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","chicago":"Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i> 29, no. 8 (2002): 1006–10. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>.","ama":"Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010. doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>"},"page":"1006-1010","intvolume":"        29","year":"2002","user_id":"20179","department":[{"_id":"59"}],"_id":"39907","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering"],"type":"journal_article","publication":"IEEE Journal of Solid-State Circuits","status":"public"},{"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39899","user_id":"20179","department":[{"_id":"59"}],"status":"public","type":"journal_article","publication":"Microelectronic Engineering","title":"Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique","doi":"10.1016/0167-9317(95)00280-4","date_updated":"2023-03-21T09:53:55Z","publisher":"Elsevier BV","author":[{"first_name":"J.T.","full_name":"Horstmann, J.T.","last_name":"Horstmann"},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"date_created":"2023-01-25T09:20:20Z","volume":30,"year":"2002","citation":{"apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.","mla":"Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>.","ama":"Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>. 2002;30(1-4):431-434. doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>"},"intvolume":"        30","page":"431-434","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"issue":"1-4"},{"intvolume":"         9","page":"28-44","citation":{"apa":"Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>","short":"K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44.","mla":"Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","bibtex":"@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }","ama":"Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>","ieee":"K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44, 2002, doi: <a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","chicago":"Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002): 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>."},"publication_identifier":{"issn":["0272-1732"]},"publication_status":"published","doi":"10.1109/40.42985","volume":9,"author":[{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"full_name":"Rueckert, U.","last_name":"Rueckert","first_name":"U."},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"}],"date_updated":"2023-03-21T09:57:17Z","status":"public","type":"journal_article","department":[{"_id":"59"}],"user_id":"20179","_id":"39925","year":"2002","issue":"6","title":"VLSI technologies for artificial neural networks","date_created":"2023-01-25T09:33:18Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","publication":"IEEE Micro","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Hardware and Architecture","Software"]},{"date_created":"2023-01-25T09:10:13Z","author":[{"full_name":"Mankowski, V.","last_name":"Mankowski","first_name":"V."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."}],"volume":53,"date_updated":"2023-03-21T10:00:06Z","publisher":"Elsevier BV","doi":"10.1016/s0167-9317(00)00370-1","title":"A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV","issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"citation":{"apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528.","mla":"Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>. 2002;53(1-4):525-528. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>"},"intvolume":"        53","page":"525-528","year":"2002","user_id":"20179","department":[{"_id":"59"}],"_id":"39882","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","publication":"Microelectronic Engineering","status":"public"},{"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4","year":"2002","page":"213-216","intvolume":"        53","citation":{"ama":"Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>. 2002;53(1-4):213-216. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.","mla":"Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>"},"publisher":"Elsevier BV","date_updated":"2023-03-21T10:02:46Z","volume":53,"date_created":"2023-01-25T09:08:36Z","author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"title":"1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","doi":"10.1016/s0167-9317(00)00299-9","publication":"Microelectronic Engineering","type":"journal_article","status":"public","_id":"39879","department":[{"_id":"59"}],"user_id":"20179","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}]},{"publication_status":"published","year":"2002","citation":{"chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE, 2002. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: <a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>.","ama":"Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE; 2002. doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>","bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.","mla":"Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>, IEEE, 2002, doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>"},"date_updated":"2023-03-21T10:02:30Z","publisher":"IEEE","author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"date_created":"2023-01-25T09:09:18Z","title":"Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","doi":"10.1109/iecon.2000.972560","publication":"2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)","type":"conference","status":"public","_id":"39880","department":[{"_id":"59"}],"user_id":"20179","language":[{"iso":"eng"}]},{"publication_status":"published","year":"2002","citation":{"chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE, 2002. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: <a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>.","ama":"Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE; 2002. doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>","bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.","mla":"Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>, IEEE, 2002, doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>."},"date_updated":"2023-03-21T10:02:17Z","publisher":"IEEE","date_created":"2023-01-25T09:09:53Z","author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"title":"Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","doi":"10.1109/iecon.2000.972560","publication":"2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)","type":"conference","status":"public","_id":"39881","department":[{"_id":"59"}],"user_id":"20179","language":[{"iso":"eng"}]}]
