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Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, pp. 841–844, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>."},"volume":11,"author":[{"first_name":"R.","full_name":"Otterbach, R.","last_name":"Otterbach"},{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"}],"date_updated":"2023-03-21T10:03:48Z","doi":"10.1016/s0925-9635(01)00703-8","publication":"Diamond and Related Materials","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"issue":"3-6","year":"2002","date_created":"2023-01-25T09:05:52Z","publisher":"Elsevier BV","title":"Reactive ion etching of CVD-diamond for piezoresistive pressure sensors"},{"status":"public","abstract":[{"lang":"eng","text":"Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen."}],"type":"book_chapter","publication":"Silizium-Halbleitertechnologie","language":[{"iso":"eng"}],"user_id":"20179","department":[{"_id":"59"}],"_id":"39875","citation":{"ieee":"U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>, Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.","chicago":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>, 131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>.","ama":"Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>. Vieweg+Teubner Verlag; 2002:131–151. doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>","short":"U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2002, pp. 131–151.","bibtex":"@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und Kontakte}, DOI={<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }","mla":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>, Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>.","apa":"Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i> (pp. 131–151). Vieweg+Teubner Verlag. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>"},"page":"131–151","place":"Wiesbaden","year":"2002","publication_identifier":{"isbn":["978-3-322-94119-0"]},"doi":"10.1007/978-3-322-94119-0_8","title":"Metallisierung und Kontakte","author":[{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"}],"date_created":"2023-01-25T09:06:58Z","date_updated":"2023-03-21T10:03:35Z","publisher":"Vieweg+Teubner Verlag"},{"year":"2000","citation":{"apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. (2000). Nanometer Scale Lateral Structures of MOS Type Layers. <i>Proceedings Micro. Tec</i>, 49–53.","mla":"Hilleringmann, Ulrich, et al. “Nanometer Scale Lateral Structures of MOS Type Layers.” <i>Proceedings Micro. 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(1999). High rate CVD-diamond etching for high temperature pressure sensor applications. <i>29th European Solid-State Device Research Conference</i>, <i>1</i>, 320–323.","bibtex":"@inproceedings{Otterbach_Hilleringmann_1999, title={High rate CVD-diamond etching for high temperature pressure sensor applications}, volume={1}, booktitle={29th European Solid-State Device Research Conference}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={1999}, pages={320–323} }","mla":"Otterbach, R., and Ulrich Hilleringmann. “High Rate CVD-Diamond Etching for High Temperature Pressure Sensor Applications.” <i>29th European Solid-State Device Research Conference</i>, vol. 1, 1999, pp. 320–23.","short":"R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research Conference, 1999, pp. 320–323.","ama":"Otterbach R, Hilleringmann U. High rate CVD-diamond etching for high temperature pressure sensor applications. In: <i>29th European Solid-State Device Research Conference</i>. 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