[{"intvolume":"        15","publication_status":"published","date_updated":"2023-03-22T10:29:08Z","author":[{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"},{"first_name":"K.","last_name":"Knospe","full_name":"Knospe, K."},{"first_name":"C.","last_name":"Heite","full_name":"Heite, C."},{"full_name":"Schumacher, K.","first_name":"K.","last_name":"Schumacher"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"publication_identifier":{"issn":["0167-9317"]},"year":"2002","title":"A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits","doi":"10.1016/0167-9317(91)90231-2","language":[{"iso":"eng"}],"issue":"1-4","publication":"Microelectronic Engineering","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"date_created":"2023-01-25T09:29:32Z","status":"public","volume":15,"user_id":"20179","_id":"39919","publisher":"Elsevier BV","page":"289-292","citation":{"ieee":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","mla":"Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","apa":"Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>","bibtex":"@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}, year={2002}, pages={289–292} }","short":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.","ama":"Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>. 2002;15(1-4):289-292. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>","chicago":"Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>."}},{"intvolume":"         9","publication_status":"published","date_updated":"2023-03-22T10:36:45Z","publication_identifier":{"issn":["0272-1732"]},"author":[{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."},{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"U.","last_name":"Rueckert","full_name":"Rueckert, U."},{"full_name":"Schumacher, K.","last_name":"Schumacher","first_name":"K."}],"year":"2002","title":"VLSI technologies for artificial neural networks","doi":"10.1109/40.42985","language":[{"iso":"eng"}],"publication":"IEEE Micro","issue":"6","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Hardware and Architecture","Software"],"date_created":"2023-01-25T09:33:50Z","status":"public","volume":9,"user_id":"20179","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","_id":"39926","page":"28-44","citation":{"mla":"Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","bibtex":"@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }","ama":"Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>","ieee":"K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44, 2002, doi: <a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","apa":"Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>","short":"K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44.","chicago":"Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002): 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>."}},{"_id":"39892","publisher":"IEEE","language":[{"iso":"eng"}],"doi":"10.1109/iecon.1998.724097","user_id":"20179","status":"public","year":"2002","title":"Nuclear radiation detectors on various type diamonds","author":[{"full_name":"Blum, F.","last_name":"Blum","first_name":"F."},{"last_name":"Denisenko","first_name":"A.","full_name":"Denisenko, A."},{"full_name":"Job, R.","last_name":"Job","first_name":"R."},{"last_name":"Borchert","first_name":"D.","full_name":"Borchert, D."},{"full_name":"Weber, W.","last_name":"Weber","first_name":"W."},{"first_name":"J.V.","last_name":"Borany","full_name":"Borany, J.V."},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"},{"first_name":"W.R.","last_name":"Fahrner","full_name":"Fahrner, W.R."}],"date_updated":"2023-03-22T10:38:37Z","publication_status":"published","date_created":"2023-01-25T09:15:11Z","type":"conference","department":[{"_id":"59"}],"publication":"IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)","citation":{"mla":"Blum, F., et al. “Nuclear Radiation Detectors on Various Type Diamonds.” <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>, IEEE, 2002, doi:<a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>.","apa":"Blum, F., Denisenko, A., Job, R., Borchert, D., Weber, W., Borany, J. V., Hilleringmann, U., &#38; Fahrner, W. R. (2002). Nuclear radiation detectors on various type diamonds. <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. <a href=\"https://doi.org/10.1109/iecon.1998.724097\">https://doi.org/10.1109/iecon.1998.724097</a>","ieee":"F. Blum <i>et al.</i>, “Nuclear radiation detectors on various type diamonds,” 2002, doi: <a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>.","short":"F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, U. Hilleringmann, W.R. Fahrner, in: IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002.","ama":"Blum F, Denisenko A, Job R, et al. Nuclear radiation detectors on various type diamonds. In: <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE; 2002. doi:<a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>","chicago":"Blum, F., A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, Ulrich Hilleringmann, and W.R. Fahrner. “Nuclear Radiation Detectors on Various Type Diamonds.” In <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE, 2002. <a href=\"https://doi.org/10.1109/iecon.1998.724097\">https://doi.org/10.1109/iecon.1998.724097</a>.","bibtex":"@inproceedings{Blum_Denisenko_Job_Borchert_Weber_Borany_Hilleringmann_Fahrner_2002, title={Nuclear radiation detectors on various type diamonds}, DOI={<a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>}, booktitle={IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)}, publisher={IEEE}, author={Blum, F. and Denisenko, A. and Job, R. and Borchert, D. and Weber, W. and Borany, J.V. and Hilleringmann, Ulrich and Fahrner, W.R.}, year={2002} }"}},{"citation":{"bibtex":"@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }","ama":"Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>. 2002;15(1-4):633-636. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>","mla":"Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","chicago":"Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>.","short":"A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.","ieee":"A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","apa":"Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>"},"user_id":"20179","volume":15,"page":"633-636","_id":"39920","publisher":"Elsevier BV","status":"public","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-25T09:29:53Z","issue":"1-4","publication":"Microelectronic Engineering","doi":"10.1016/0167-9317(91)90299-s","language":[{"iso":"eng"}],"date_updated":"2023-03-21T09:47:17Z","publication_status":"published","intvolume":"        15","title":"Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica","year":"2002","publication_identifier":{"issn":["0167-9317"]},"author":[{"full_name":"Soennecken, A.","first_name":"A.","last_name":"Soennecken"},{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."}]},{"volume":19,"user_id":"20179","_id":"39915","publisher":"Elsevier BV","page":"211-214","status":"public","citation":{"chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>."},"doi":"10.1016/0167-9317(92)90425-q","language":[{"iso":"eng"}],"intvolume":"        19","publication_status":"published","date_updated":"2023-03-21T09:49:09Z","author":[{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"publication_identifier":{"issn":["0167-9317"]},"year":"2002","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","date_created":"2023-01-25T09:27:51Z","issue":"1-4","publication":"Microelectronic Engineering"},{"publication_status":"published","date_updated":"2023-03-21T09:48:55Z","intvolume":"        19","title":"CMOS compatible micromachining by dry silicon-etching techniques","year":"2002","author":[{"full_name":"Adams, S.","first_name":"S.","last_name":"Adams"},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"},{"full_name":"Goser, K.","first_name":"K.","last_name":"Goser"}],"publication_identifier":{"issn":["0167-9317"]},"doi":"10.1016/0167-9317(92)90420-v","language":[{"iso":"eng"}],"issue":"1-4","publication":"Microelectronic Engineering","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-25T09:28:16Z","status":"public","user_id":"20179","volume":19,"page":"191-194","_id":"39916","publisher":"Elsevier BV","citation":{"mla":"Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","ama":"Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>","bibtex":"@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }","apa":"Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 191–194. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>","ieee":"S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 191–194, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","short":"S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.","chicago":"Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 191–94. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>."}},{"type":"journal_article","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"date_created":"2023-01-24T09:23:56Z","publication":"IEEE Transactions on Electron Devices","issue":"1","doi":"10.1109/16.658845","language":[{"iso":"eng"}],"date_updated":"2023-03-21T09:45:40Z","publication_status":"published","intvolume":"        45","title":"Matching analysis of deposition defined 50-nm MOSFET's","year":"2002","publication_identifier":{"issn":["0018-9383"]},"author":[{"last_name":"Horstmann","first_name":"J.T.","full_name":"Horstmann, J.T."},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"},{"full_name":"Goser, K.F.","last_name":"Goser","first_name":"K.F."}],"citation":{"ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>."},"user_id":"20179","volume":45,"page":"299-306","_id":"39348","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","status":"public"},{"date_updated":"2023-03-21T09:46:40Z","publication_status":"published","year":"2002","title":"Applications and implementations of neural networks in microelectronics-overview and status","status":"public","author":[{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"},{"last_name":"Rueckert","first_name":"U.","full_name":"Rueckert, U."}],"doi":"10.1109/cmpeur.1991.257442","user_id":"20179","_id":"39923","language":[{"iso":"eng"}],"publisher":"IEEE Comput. Soc. Press","publication":"[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications","citation":{"bibtex":"@inproceedings{Goser_Hilleringmann_Rueckert_2002, title={Applications and implementations of neural networks in microelectronics-overview and status}, DOI={<a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>}, booktitle={[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications}, publisher={IEEE Comput. Soc. Press}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.}, year={2002} }","short":"K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press, 2002.","ama":"Goser K, Hilleringmann U, Rueckert U. Applications and implementations of neural networks in microelectronics-overview and status. In: <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput. Soc. Press; 2002. doi:<a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>","chicago":"Goser, K., Ulrich Hilleringmann, and U. Rueckert. “Applications and Implementations of Neural Networks in Microelectronics-Overview and Status.” In <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput. Soc. Press, 2002. <a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">https://doi.org/10.1109/cmpeur.1991.257442</a>.","ieee":"K. Goser, U. Hilleringmann, and U. Rueckert, “Applications and implementations of neural networks in microelectronics-overview and status,” 2002, doi: <a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>.","mla":"Goser, K., et al. “Applications and Implementations of Neural Networks in Microelectronics-Overview and Status.” <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>, IEEE Comput. Soc. Press, 2002, doi:<a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>.","apa":"Goser, K., Hilleringmann, U., &#38; Rueckert, U. (2002). Applications and implementations of neural networks in microelectronics-overview and status. <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>. <a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">https://doi.org/10.1109/cmpeur.1991.257442</a>"},"type":"conference","department":[{"_id":"59"}],"date_created":"2023-01-25T09:31:42Z"},{"status":"public","page":"413-417","publisher":"Elsevier BV","_id":"39889","user_id":"20179","volume":46,"citation":{"mla":"Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417. doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>, <i>46</i>(1–4), 413–417. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i> 46, no. 1–4 (2002): 413–17. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417."},"title":"12 kV low current cascaded light triggered switch on one silicon chip","year":"2002","author":[{"full_name":"Mankowski, V.","last_name":"Mankowski","first_name":"V."},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"},{"full_name":"Schumacher, K.","last_name":"Schumacher","first_name":"K."}],"publication_identifier":{"issn":["0167-9317"]},"date_updated":"2023-03-21T09:58:35Z","publication_status":"published","intvolume":"        46","language":[{"iso":"eng"}],"doi":"10.1016/s0167-9317(99)00122-7","issue":"1-4","publication":"Microelectronic Engineering","date_created":"2023-01-25T09:13:17Z","type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}]},{"citation":{"bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>"},"user_id":"20179","volume":45,"page":"299-306","_id":"39891","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","status":"public","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-25T09:14:43Z","publication":"IEEE Transactions on Electron Devices","issue":"1","doi":"10.1109/16.658845","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-03-21T09:58:01Z","intvolume":"        45","title":"Matching analysis of deposition defined 50-nm MOSFET's","year":"2002","author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"},{"full_name":"Goser, K.F.","last_name":"Goser","first_name":"K.F."}],"publication_identifier":{"issn":["0018-9383"]}},{"citation":{"bibtex":"@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250} }","ama":"Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250. doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>","mla":"Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50, doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","chicago":"Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i> 43, no. 7 (2002): 1245–50. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.","short":"G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250.","ieee":"G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol. 43, no. 7, pp. 1245–1250, 2002, doi: <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","apa":"Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>, <i>43</i>(7), 1245–1250. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>"},"page":"1245-1250","_id":"39886","publisher":"Elsevier BV","user_id":"20179","volume":43,"status":"public","date_created":"2023-01-25T09:11:50Z","type":"journal_article","keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"publication":"Solid-State Electronics","issue":"7","language":[{"iso":"eng"}],"doi":"10.1016/s0038-1101(99)00060-x","title":"Mesoscopic transport phenomena in ultrashort channel MOSFETs","year":"2002","publication_identifier":{"issn":["0038-1101"]},"author":[{"full_name":"Wirth, G","first_name":"G","last_name":"Wirth"},{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"last_name":"Horstmann","first_name":"J.T","full_name":"Horstmann, J.T"},{"last_name":"Goser","first_name":"K","full_name":"Goser, K"}],"date_updated":"2023-03-21T09:59:22Z","publication_status":"published","intvolume":"        43"},{"department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"type":"journal_article","date_created":"2023-01-25T09:07:37Z","issue":"3-7","publication":"Diamond and Related Materials","doi":"10.1016/s0925-9635(01)00373-9","language":[{"iso":"eng"}],"intvolume":"        10","publication_status":"published","date_updated":"2023-03-21T10:03:16Z","author":[{"last_name":"Otterbach","first_name":"R.","full_name":"Otterbach, R."},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"},{"first_name":"T.J.","last_name":"Horstmann","full_name":"Horstmann, T.J."},{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."}],"publication_identifier":{"issn":["0925-9635"]},"year":"2002","title":"Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications","citation":{"ama":"Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>","bibtex":"@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}, volume={10}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>}, number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}, year={2002}, pages={511–514} }","mla":"Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>.","short":"R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.","chicago":"Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.","apa":"Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002). Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>","ieee":"R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>."},"volume":10,"user_id":"20179","_id":"39876","publisher":"Elsevier BV","page":"511-514","status":"public"},{"status":"public","page":"569-572","_id":"39877","publisher":"Elsevier BV","user_id":"20179","volume":53,"citation":{"apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 569–572. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>","ieee":"U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","short":"U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.","chicago":"Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 569–72. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.","mla":"Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","ama":"Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>. 2002;53(1-4):569-572. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>","bibtex":"@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }"},"year":"2002","title":"A structure definition technique for 25 nm lines of silicon and related materials","publication_identifier":{"issn":["0167-9317"]},"author":[{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"last_name":"Vieregge","first_name":"T.","full_name":"Vieregge, T."},{"last_name":"Horstmann","first_name":"J.T.","full_name":"Horstmann, J.T."}],"publication_status":"published","date_updated":"2023-03-21T10:03:00Z","intvolume":"        53","language":[{"iso":"eng"}],"doi":"10.1016/s0167-9317(00)00380-4","issue":"1-4","publication":"Microelectronic Engineering","date_created":"2023-01-25T09:08:13Z","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}]},{"issue":"3-6","publication":"Diamond and Related Materials","date_created":"2023-01-25T09:05:52Z","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"publication_identifier":{"issn":["0925-9635"]},"author":[{"full_name":"Otterbach, R.","first_name":"R.","last_name":"Otterbach"},{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"}],"year":"2002","title":"Reactive ion etching of CVD-diamond for piezoresistive pressure sensors","intvolume":"        11","date_updated":"2023-03-21T10:03:48Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/s0925-9635(01)00703-8","citation":{"apa":"Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6), 841–844. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>","ieee":"R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, pp. 841–844, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","chicago":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11, no. 3–6 (2002): 841–44. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.","short":"R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.","mla":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","ama":"Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>","bibtex":"@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}, volume={11}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>}, number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844} }"},"status":"public","_id":"39874","publisher":"Elsevier BV","page":"841-844","volume":11,"user_id":"20179"},{"publication_identifier":{"isbn":["978-3-322-94119-0"]},"author":[{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"}],"year":"2002","status":"public","title":"Metallisierung und Kontakte","date_updated":"2023-03-21T10:03:35Z","_id":"39875","language":[{"iso":"eng"}],"publisher":"Vieweg+Teubner Verlag","page":"131–151","user_id":"20179","doi":"10.1007/978-3-322-94119-0_8","citation":{"chicago":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>, 131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>.","short":"U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2002, pp. 131–151.","ieee":"U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>, Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.","apa":"Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i> (pp. 131–151). Vieweg+Teubner Verlag. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>","bibtex":"@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und Kontakte}, DOI={<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }","ama":"Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>. Vieweg+Teubner Verlag; 2002:131–151. doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>","mla":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>, Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>."},"publication":"Silizium-Halbleitertechnologie","abstract":[{"lang":"eng","text":"Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen."}],"date_created":"2023-01-25T09:06:58Z","place":"Wiesbaden","department":[{"_id":"59"}],"type":"book_chapter"},{"page":"49–53","_id":"39884","language":[{"iso":"eng"}],"user_id":"20179","status":"public","title":"Nanometer Scale Lateral Structures of MOS Type Layers","year":"2000","author":[{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"last_name":"Vieregge","first_name":"T","full_name":"Vieregge, T"},{"first_name":"JT","last_name":"Horstmann","full_name":"Horstmann, JT"}],"date_updated":"2023-03-21T09:59:50Z","date_created":"2023-01-25T09:10:42Z","type":"conference","department":[{"_id":"59"}],"publication":"Proceedings Micro. tec","citation":{"mla":"Hilleringmann, Ulrich, et al. “Nanometer Scale Lateral Structures of MOS Type Layers.” <i>Proceedings Micro. Tec</i>, 2000, pp. 49–53.","bibtex":"@inproceedings{Hilleringmann_Vieregge_Horstmann_2000, title={Nanometer Scale Lateral Structures of MOS Type Layers}, booktitle={Proceedings Micro. tec}, author={Hilleringmann, Ulrich and Vieregge, T and Horstmann, JT}, year={2000}, pages={49–53} }","ama":"Hilleringmann U, Vieregge T, Horstmann J. Nanometer Scale Lateral Structures of MOS Type Layers. In: <i>Proceedings Micro. Tec</i>. ; 2000:49–53.","ieee":"U. Hilleringmann, T. Vieregge, and J. Horstmann, “Nanometer Scale Lateral Structures of MOS Type Layers,” in <i>Proceedings Micro. tec</i>, 2000, pp. 49–53.","apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. (2000). Nanometer Scale Lateral Structures of MOS Type Layers. <i>Proceedings Micro. Tec</i>, 49–53.","chicago":"Hilleringmann, Ulrich, T Vieregge, and JT Horstmann. “Nanometer Scale Lateral Structures of MOS Type Layers.” In <i>Proceedings Micro. Tec</i>, 49–53, 2000.","short":"U. Hilleringmann, T. Vieregge, J. Horstmann, in: Proceedings Micro. Tec, 2000, pp. 49–53."}},{"publication":"29th European Solid-State Device Research Conference","citation":{"bibtex":"@inproceedings{Otterbach_Hilleringmann_1999, title={High rate CVD-diamond etching for high temperature pressure sensor applications}, volume={1}, booktitle={29th European Solid-State Device Research Conference}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={1999}, pages={320–323} }","ama":"Otterbach R, Hilleringmann U. High rate CVD-diamond etching for high temperature pressure sensor applications. In: <i>29th European Solid-State Device Research Conference</i>. Vol 1. ; 1999:320-323.","mla":"Otterbach, R., and Ulrich Hilleringmann. “High Rate CVD-Diamond Etching for High Temperature Pressure Sensor Applications.” <i>29th European Solid-State Device Research Conference</i>, vol. 1, 1999, pp. 320–23.","chicago":"Otterbach, R., and Ulrich Hilleringmann. “High Rate CVD-Diamond Etching for High Temperature Pressure Sensor Applications.” In <i>29th European Solid-State Device Research Conference</i>, 1:320–23, 1999.","short":"R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research Conference, 1999, pp. 320–323.","ieee":"R. Otterbach and U. Hilleringmann, “High rate CVD-diamond etching for high temperature pressure sensor applications,” in <i>29th European Solid-State Device Research Conference</i>, 1999, vol. 1, pp. 320–323.","apa":"Otterbach, R., &#38; Hilleringmann, U. (1999). High rate CVD-diamond etching for high temperature pressure sensor applications. <i>29th European Solid-State Device Research Conference</i>, <i>1</i>, 320–323."},"type":"conference","department":[{"_id":"59"}],"date_created":"2023-01-25T09:14:01Z","date_updated":"2023-03-21T09:58:19Z","intvolume":"         1","year":"1999","status":"public","title":"High rate CVD-diamond etching for high temperature pressure sensor applications","author":[{"first_name":"R.","last_name":"Otterbach","full_name":"Otterbach, R."},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"}],"user_id":"20179","volume":1,"page":"320-323","_id":"39890","language":[{"iso":"eng"}]},{"user_id":"20179","_id":"39893","language":[{"iso":"eng"}],"page":"512-515","date_updated":"2023-03-21T09:57:47Z","author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"status":"public","title":"Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors","year":"1998","department":[{"_id":"59"}],"type":"conference","date_created":"2023-01-25T09:15:49Z","citation":{"mla":"Horstmann, J. T., et al. “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.” <i>28th European Solid-State Device Research Conference</i>, 1998, pp. 512–15.","ama":"Horstmann JT, Hilleringmann U, Goser K. Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors. In: <i>28th European Solid-State Device Research Conference</i>. ; 1998:512-515.","bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_1998, title={Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors}, booktitle={28th European Solid-State Device Research Conference}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={1998}, pages={512–515} }","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (1998). Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors. <i>28th European Solid-State Device Research Conference</i>, 512–515.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors,” in <i>28th European Solid-State Device Research Conference</i>, 1998, pp. 512–515.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.” In <i>28th European Solid-State Device Research Conference</i>, 512–15, 1998.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State Device Research Conference, 1998, pp. 512–515."},"publication":"28th European Solid-State Device Research Conference"},{"volume":44,"doi":"10.1109/16.605463","user_id":"20179","language":[{"iso":"eng"}],"_id":"39896","page":"1249-1252","intvolume":"        44","date_updated":"2023-03-21T09:57:32Z","author":[{"full_name":"Heinrich, L.M.H.","first_name":"L.M.H.","last_name":"Heinrich"},{"last_name":"Muller","first_name":"J.","full_name":"Muller, J."},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"},{"first_name":"K.F.","last_name":"Goser","full_name":"Goser, K.F."},{"full_name":"Holmes, A.","first_name":"A.","last_name":"Holmes"},{"first_name":"Do-Hoon","last_name":"Hwang","full_name":"Hwang, Do-Hoon"},{"last_name":"Stern","first_name":"R.","full_name":"Stern, R."}],"status":"public","year":"1997","title":"CMOS-compatible organic light-emitting diodes","department":[{"_id":"59"}],"type":"journal_article","date_created":"2023-01-25T09:17:03Z","citation":{"chicago":"Heinrich, L.M.H., J. Muller, Ulrich Hilleringmann, K.F. Goser, A. Holmes, Do-Hoon Hwang, and R. Stern. “CMOS-Compatible Organic Light-Emitting Diodes.” <i>IEEE Transactions on Electron Devices</i> 44, no. 8 (1997): 1249–52. <a href=\"https://doi.org/10.1109/16.605463\">https://doi.org/10.1109/16.605463</a>.","short":"L.M.H. Heinrich, J. Muller, U. Hilleringmann, K.F. Goser, A. Holmes, D.-H. Hwang, R. Stern, IEEE Transactions on Electron Devices 44 (1997) 1249–1252.","ieee":"L. M. H. Heinrich <i>et al.</i>, “CMOS-compatible organic light-emitting diodes,” <i>IEEE Transactions on Electron Devices</i>, vol. 44, no. 8, pp. 1249–1252, 1997, doi: <a href=\"https://doi.org/10.1109/16.605463\">10.1109/16.605463</a>.","apa":"Heinrich, L. M. H., Muller, J., Hilleringmann, U., Goser, K. F., Holmes, A., Hwang, D.-H., &#38; Stern, R. (1997). CMOS-compatible organic light-emitting diodes. <i>IEEE Transactions on Electron Devices</i>, <i>44</i>(8), 1249–1252. <a href=\"https://doi.org/10.1109/16.605463\">https://doi.org/10.1109/16.605463</a>","bibtex":"@article{Heinrich_Muller_Hilleringmann_Goser_Holmes_Hwang_Stern_1997, title={CMOS-compatible organic light-emitting diodes}, volume={44}, DOI={<a href=\"https://doi.org/10.1109/16.605463\">10.1109/16.605463</a>}, number={8}, journal={IEEE Transactions on Electron Devices}, author={Heinrich, L.M.H. and Muller, J. and Hilleringmann, Ulrich and Goser, K.F. and Holmes, A. and Hwang, Do-Hoon and Stern, R.}, year={1997}, pages={1249–1252} }","ama":"Heinrich LMH, Muller J, Hilleringmann U, et al. CMOS-compatible organic light-emitting diodes. <i>IEEE Transactions on Electron Devices</i>. 1997;44(8):1249-1252. doi:<a href=\"https://doi.org/10.1109/16.605463\">10.1109/16.605463</a>","mla":"Heinrich, L. M. H., et al. “CMOS-Compatible Organic Light-Emitting Diodes.” <i>IEEE Transactions on Electron Devices</i>, vol. 44, no. 8, 1997, pp. 1249–52, doi:<a href=\"https://doi.org/10.1109/16.605463\">10.1109/16.605463</a>."},"publication":"IEEE Transactions on Electron Devices","issue":"8"},{"citation":{"ieee":"J. Muller, G. Wirth, U. Hilleringmann, and K. Goser, “Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission,” in <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>, 1996, pp. 947–950.","mla":"Muller, J., et al. “Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission.” <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>, 1996, pp. 947–50.","apa":"Muller, J., Wirth, G., Hilleringmann, U., &#38; Goser, K. (1996). Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission. <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>, 947–950.","bibtex":"@inproceedings{Muller_Wirth_Hilleringmann_Goser_1996, title={Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission}, booktitle={ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference}, author={Muller, J. and Wirth, G. and Hilleringmann, Ulrich and Goser, K.}, year={1996}, pages={947–950} }","chicago":"Muller, J., G. Wirth, Ulrich Hilleringmann, and K. Goser. “Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission.” In <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>, 947–50, 1996.","ama":"Muller J, Wirth G, Hilleringmann U, Goser K. Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission. In: <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>. ; 1996:947-950.","short":"J. Muller, G. Wirth, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 947–950."},"publication":"ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference","date_created":"2023-01-25T09:21:38Z","department":[{"_id":"59"}],"type":"conference","author":[{"first_name":"J.","last_name":"Muller","full_name":"Muller, J."},{"last_name":"Wirth","first_name":"G.","full_name":"Wirth, G."},{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"title":"Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission","status":"public","year":"1996","date_updated":"2023-03-21T09:53:14Z","_id":"39902","language":[{"iso":"eng"}],"page":"947-950","user_id":"20179"}]