---
_id: '39919'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Knospe, K.
  last_name: Knospe
- first_name: C.
  full_name: Heite, C.
  last_name: Heite
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based
    technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):289-292. doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>
  apa: Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002).
    A silicon based technology for monolithic integration of waveguides and VLSI CMOS
    circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>
  bibtex: '@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K.
    and Goser, K.}, year={2002}, pages={289–292} }'
  chicago: 'Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser.
    “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI
    CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92.
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>.'
  ieee: 'U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration
    of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol.
    15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.
  short: U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic
    Engineering 15 (2002) 289–292.
date_created: 2023-01-25T09:29:32Z
date_updated: 2023-03-22T10:29:08Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90231-2
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 289-292
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A silicon based technology for monolithic integration of waveguides and VLSI
  CMOS circuits
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39926'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial
    neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>
  apa: Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI
    technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44.
    <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>
  bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies
    for artificial neural networks}, volume={9}, DOI={<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>},
    number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics
    Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.
    and Schumacher, K.}, year={2002}, pages={28–44} }'
  chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI
    Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002):
    28–44. <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>.'
  ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies
    for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44,
    2002, doi: <a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.'
  mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE
    Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE),
    2002, pp. 28–44, doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.
  short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002)
    28–44.
date_created: 2023-01-25T09:33:50Z
date_updated: 2023-03-22T10:36:45Z
department:
- _id: '59'
doi: 10.1109/40.42985
intvolume: '         9'
issue: '6'
keyword:
- Electrical and Electronic Engineering
- Hardware and Architecture
- Software
language:
- iso: eng
page: 28-44
publication: IEEE Micro
publication_identifier:
  issn:
  - 0272-1732
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: VLSI technologies for artificial neural networks
type: journal_article
user_id: '20179'
volume: 9
year: '2002'
...
---
_id: '39892'
author:
- first_name: F.
  full_name: Blum, F.
  last_name: Blum
- first_name: A.
  full_name: Denisenko, A.
  last_name: Denisenko
- first_name: R.
  full_name: Job, R.
  last_name: Job
- first_name: D.
  full_name: Borchert, D.
  last_name: Borchert
- first_name: W.
  full_name: Weber, W.
  last_name: Weber
- first_name: J.V.
  full_name: Borany, J.V.
  last_name: Borany
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: W.R.
  full_name: Fahrner, W.R.
  last_name: Fahrner
citation:
  ama: 'Blum F, Denisenko A, Job R, et al. Nuclear radiation detectors on various
    type diamonds. In: <i>IECON ’98. Proceedings of the 24th Annual Conference of
    the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE; 2002. doi:<a
    href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>'
  apa: Blum, F., Denisenko, A., Job, R., Borchert, D., Weber, W., Borany, J. V., Hilleringmann,
    U., &#38; Fahrner, W. R. (2002). Nuclear radiation detectors on various type diamonds.
    <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial
    Electronics Society (Cat. No.98CH36200)</i>. <a href="https://doi.org/10.1109/iecon.1998.724097">https://doi.org/10.1109/iecon.1998.724097</a>
  bibtex: '@inproceedings{Blum_Denisenko_Job_Borchert_Weber_Borany_Hilleringmann_Fahrner_2002,
    title={Nuclear radiation detectors on various type diamonds}, DOI={<a href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>},
    booktitle={IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial
    Electronics Society (Cat. No.98CH36200)}, publisher={IEEE}, author={Blum, F. and
    Denisenko, A. and Job, R. and Borchert, D. and Weber, W. and Borany, J.V. and
    Hilleringmann, Ulrich and Fahrner, W.R.}, year={2002} }'
  chicago: Blum, F., A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, Ulrich
    Hilleringmann, and W.R. Fahrner. “Nuclear Radiation Detectors on Various Type
    Diamonds.” In <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE
    Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE, 2002. <a href="https://doi.org/10.1109/iecon.1998.724097">https://doi.org/10.1109/iecon.1998.724097</a>.
  ieee: 'F. Blum <i>et al.</i>, “Nuclear radiation detectors on various type diamonds,”
    2002, doi: <a href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>.'
  mla: Blum, F., et al. “Nuclear Radiation Detectors on Various Type Diamonds.” <i>IECON
    ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics
    Society (Cat. No.98CH36200)</i>, IEEE, 2002, doi:<a href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>.
  short: 'F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, U. Hilleringmann,
    W.R. Fahrner, in: IECON ’98. Proceedings of the 24th Annual Conference of the
    IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002.'
date_created: 2023-01-25T09:15:11Z
date_updated: 2023-03-22T10:38:37Z
department:
- _id: '59'
doi: 10.1109/iecon.1998.724097
language:
- iso: eng
publication: IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial
  Electronics Society (Cat. No.98CH36200)
publication_status: published
publisher: IEEE
status: public
title: Nuclear radiation detectors on various type diamonds
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '39920'
author:
- first_name: A.
  full_name: Soennecken, A.
  last_name: Soennecken
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile
    analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):633-636. doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>
  apa: Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica.
    <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>
  bibtex: '@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={633–636} }'
  chicago: 'Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures
    as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.”
    <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>.'
  ieee: 'A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.'
  mla: Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory
    Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic
    Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.
  short: A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15
    (2002) 633–636.
date_created: 2023-01-25T09:29:53Z
date_updated: 2023-03-21T09:47:17Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90299-s
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 633-636
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS
  technology with PZT dielectrica
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39915'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:51Z
date_updated: 2023-03-21T09:49:09Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39916'
author:
- first_name: S.
  full_name: Adams, S.
  last_name: Adams
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching
    techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>
  apa: Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining
    by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4),
    191–194. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>
  bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining
    by dry silicon-etching techniques}, volume={19}, DOI={<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194}
    }'
  chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining
    by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no.
    1–4 (2002): 191–94. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>.'
  ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining
    by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19,
    no. 1–4, pp. 191–194, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.'
  mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”
    <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94,
    doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.
  short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002)
    191–194.
date_created: 2023-01-25T09:28:16Z
date_updated: 2023-03-21T09:48:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90420-v
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 191-194
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: CMOS compatible micromachining by dry silicon-etching techniques
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39348'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-24T09:23:56Z
date_updated: 2023-03-21T09:45:40Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39923'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
citation:
  ama: 'Goser K, Hilleringmann U, Rueckert U. Applications and implementations of
    neural networks in microelectronics-overview and status. In: <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput.
    Soc. Press; 2002. doi:<a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>'
  apa: Goser, K., Hilleringmann, U., &#38; Rueckert, U. (2002). Applications and implementations
    of neural networks in microelectronics-overview and status. <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. <a href="https://doi.org/10.1109/cmpeur.1991.257442">https://doi.org/10.1109/cmpeur.1991.257442</a>
  bibtex: '@inproceedings{Goser_Hilleringmann_Rueckert_2002, title={Applications and
    implementations of neural networks in microelectronics-overview and status}, DOI={<a
    href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>},
    booktitle={[1991] Proceedings, Advanced Computer Technology, Reliable Systems
    and Applications}, publisher={IEEE Comput. Soc. Press}, author={Goser, K. and
    Hilleringmann, Ulrich and Rueckert, U.}, year={2002} }'
  chicago: Goser, K., Ulrich Hilleringmann, and U. Rueckert. “Applications and Implementations
    of Neural Networks in Microelectronics-Overview and Status.” In <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput.
    Soc. Press, 2002. <a href="https://doi.org/10.1109/cmpeur.1991.257442">https://doi.org/10.1109/cmpeur.1991.257442</a>.
  ieee: 'K. Goser, U. Hilleringmann, and U. Rueckert, “Applications and implementations
    of neural networks in microelectronics-overview and status,” 2002, doi: <a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>.'
  mla: Goser, K., et al. “Applications and Implementations of Neural Networks in Microelectronics-Overview
    and Status.” <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems
    and Applications</i>, IEEE Comput. Soc. Press, 2002, doi:<a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>.
  short: 'K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced
    Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press,
    2002.'
date_created: 2023-01-25T09:31:42Z
date_updated: 2023-03-21T09:46:40Z
department:
- _id: '59'
doi: 10.1109/cmpeur.1991.257442
language:
- iso: eng
publication: '[1991] Proceedings, Advanced Computer Technology, Reliable Systems and
  Applications'
publication_status: published
publisher: IEEE Comput. Soc. Press
status: public
title: Applications and implementations of neural networks in microelectronics-overview
  and status
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '39889'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light
    triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417.
    doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current
    cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>,
    <i>46</i>(1–4), 413–417. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current
    cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={413–417} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current
    Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>
    46, no. 1–4 (2002): 413–17. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded
    light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>,
    vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.'
  mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on
    One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier
    BV, 2002, pp. 413–17, doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    46 (2002) 413–417.
date_created: 2023-01-25T09:13:17Z
date_updated: 2023-03-21T09:58:35Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(99)00122-7
intvolume: '        46'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 413-417
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 12 kV low current cascaded light triggered switch on one silicon chip
type: journal_article
user_id: '20179'
volume: 46
year: '2002'
...
---
_id: '39891'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-25T09:14:43Z
date_updated: 2023-03-21T09:58:01Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39886'
author:
- first_name: G
  full_name: Wirth, G
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: J.T
  full_name: Horstmann, J.T
  last_name: Horstmann
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena
    in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250.
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>
  apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic
    transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>,
    <i>43</i>(7), 1245–1250. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>
  bibtex: '@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport
    phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>},
    number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth,
    G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250}
    }'
  chicago: 'Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic
    Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>
    43, no. 7 (2002): 1245–50. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.'
  ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport
    phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol.
    43, no. 7, pp. 1245–1250, 2002, doi: <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.'
  mla: Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.”
    <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50,
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.
  short: G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics
    43 (2002) 1245–1250.
date_created: 2023-01-25T09:11:50Z
date_updated: 2023-03-21T09:59:22Z
department:
- _id: '59'
doi: 10.1016/s0038-1101(99)00060-x
intvolume: '        43'
issue: '7'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 1245-1250
publication: Solid-State Electronics
publication_identifier:
  issn:
  - 0038-1101
publication_status: published
publisher: Elsevier BV
status: public
title: Mesoscopic transport phenomena in ultrashort channel MOSFETs
type: journal_article
user_id: '20179'
volume: 43
year: '2002'
...
---
_id: '39876'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.J.
  full_name: Horstmann, T.J.
  last_name: Horstmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum
    feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond
    and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>
  apa: Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002).
    Structures with a minimum feature size of less than 100 nm in CVD-diamond for
    sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514.
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>
  bibtex: '@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications},
    volume={10}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>},
    number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser,
    K.}, year={2002}, pages={511–514} }'
  chicago: 'Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures
    with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.”
    <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.'
  ieee: 'R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,”
    <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi:
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.'
  mla: Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than
    100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>,
    vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.
  short: R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related
    Materials 10 (2002) 511–514.
date_created: 2023-01-25T09:07:37Z
date_updated: 2023-03-21T10:03:16Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00373-9
intvolume: '        10'
issue: 3-7
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 511-514
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Structures with a minimum feature size of less than 100 nm in CVD-diamond for
  sensor applications
type: journal_article
user_id: '20179'
volume: 10
year: '2002'
...
---
_id: '39877'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.
  full_name: Vieregge, T.
  last_name: Vieregge
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
citation:
  ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique
    for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>.
    2002;53(1-4):569-572. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure
    definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic
    Engineering</i>, <i>53</i>(1–4), 569–572. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>
  bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition
    technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a
    href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002},
    pages={569–572} }'
  chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition
    Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic
    Engineering</i> 53, no. 1–4 (2002): 569–72. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.'
  ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition
    technique for 25 nm lines of silicon and related materials,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines
    of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53,
    no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.
  short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering
    53 (2002) 569–572.
date_created: 2023-01-25T09:08:13Z
date_updated: 2023-03-21T10:03:00Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00380-4
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 569-572
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A structure definition technique for 25 nm lines of silicon and related materials
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39874'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive
    pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844.
    doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>
  apa: Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6),
    841–844. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>
  bibtex: '@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors}, volume={11}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>},
    number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844}
    }'
  chicago: 'Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11,
    no. 3–6 (2002): 841–44. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.'
  ieee: 'R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for
    piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11,
    no. 3–6, pp. 841–844, 2002, doi: <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.'
  mla: Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol.
    11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.
  short: R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.
date_created: 2023-01-25T09:05:52Z
date_updated: 2023-03-21T10:03:48Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00703-8
intvolume: '        11'
issue: 3-6
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 841-844
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
type: journal_article
user_id: '20179'
volume: 11
year: '2002'
...
---
_id: '39875'
abstract:
- lang: eng
  text: Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten
    der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten
    eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen
    zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als
    Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen
    von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben
    dienen.
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>.
    Vieweg+Teubner Verlag; 2002:131–151. doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>'
  apa: Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i>
    (pp. 131–151). Vieweg+Teubner Verlag. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>
  bibtex: '@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und
    Kontakte}, DOI={<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>},
    booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag},
    author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }'
  chicago: 'Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>,
    131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>.'
  ieee: 'U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>,
    Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.'
  mla: Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>,
    Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>.
  short: 'U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag,
    Wiesbaden, 2002, pp. 131–151.'
date_created: 2023-01-25T09:06:58Z
date_updated: 2023-03-21T10:03:35Z
department:
- _id: '59'
doi: 10.1007/978-3-322-94119-0_8
language:
- iso: eng
page: 131–151
place: Wiesbaden
publication: Silizium-Halbleitertechnologie
publication_identifier:
  isbn:
  - 978-3-322-94119-0
publisher: Vieweg+Teubner Verlag
status: public
title: Metallisierung und Kontakte
type: book_chapter
user_id: '20179'
year: '2002'
...
---
_id: '39884'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T
  full_name: Vieregge, T
  last_name: Vieregge
- first_name: JT
  full_name: Horstmann, JT
  last_name: Horstmann
citation:
  ama: 'Hilleringmann U, Vieregge T, Horstmann J. Nanometer Scale Lateral Structures
    of MOS Type Layers. In: <i>Proceedings Micro. Tec</i>. ; 2000:49–53.'
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. (2000). Nanometer Scale
    Lateral Structures of MOS Type Layers. <i>Proceedings Micro. Tec</i>, 49–53.
  bibtex: '@inproceedings{Hilleringmann_Vieregge_Horstmann_2000, title={Nanometer
    Scale Lateral Structures of MOS Type Layers}, booktitle={Proceedings Micro. tec},
    author={Hilleringmann, Ulrich and Vieregge, T and Horstmann, JT}, year={2000},
    pages={49–53} }'
  chicago: Hilleringmann, Ulrich, T Vieregge, and JT Horstmann. “Nanometer Scale Lateral
    Structures of MOS Type Layers.” In <i>Proceedings Micro. Tec</i>, 49–53, 2000.
  ieee: U. Hilleringmann, T. Vieregge, and J. Horstmann, “Nanometer Scale Lateral
    Structures of MOS Type Layers,” in <i>Proceedings Micro. tec</i>, 2000, pp. 49–53.
  mla: Hilleringmann, Ulrich, et al. “Nanometer Scale Lateral Structures of MOS Type
    Layers.” <i>Proceedings Micro. Tec</i>, 2000, pp. 49–53.
  short: 'U. Hilleringmann, T. Vieregge, J. Horstmann, in: Proceedings Micro. Tec,
    2000, pp. 49–53.'
date_created: 2023-01-25T09:10:42Z
date_updated: 2023-03-21T09:59:50Z
department:
- _id: '59'
language:
- iso: eng
page: 49–53
publication: Proceedings Micro. tec
status: public
title: Nanometer Scale Lateral Structures of MOS Type Layers
type: conference
user_id: '20179'
year: '2000'
...
---
_id: '39890'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Otterbach R, Hilleringmann U. High rate CVD-diamond etching for high temperature
    pressure sensor applications. In: <i>29th European Solid-State Device Research
    Conference</i>. Vol 1. ; 1999:320-323.'
  apa: Otterbach, R., &#38; Hilleringmann, U. (1999). High rate CVD-diamond etching
    for high temperature pressure sensor applications. <i>29th European Solid-State
    Device Research Conference</i>, <i>1</i>, 320–323.
  bibtex: '@inproceedings{Otterbach_Hilleringmann_1999, title={High rate CVD-diamond
    etching for high temperature pressure sensor applications}, volume={1}, booktitle={29th
    European Solid-State Device Research Conference}, author={Otterbach, R. and Hilleringmann,
    Ulrich}, year={1999}, pages={320–323} }'
  chicago: Otterbach, R., and Ulrich Hilleringmann. “High Rate CVD-Diamond Etching
    for High Temperature Pressure Sensor Applications.” In <i>29th European Solid-State
    Device Research Conference</i>, 1:320–23, 1999.
  ieee: R. Otterbach and U. Hilleringmann, “High rate CVD-diamond etching for high
    temperature pressure sensor applications,” in <i>29th European Solid-State Device
    Research Conference</i>, 1999, vol. 1, pp. 320–323.
  mla: Otterbach, R., and Ulrich Hilleringmann. “High Rate CVD-Diamond Etching for
    High Temperature Pressure Sensor Applications.” <i>29th European Solid-State Device
    Research Conference</i>, vol. 1, 1999, pp. 320–23.
  short: 'R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research
    Conference, 1999, pp. 320–323.'
date_created: 2023-01-25T09:14:01Z
date_updated: 2023-03-21T09:58:19Z
department:
- _id: '59'
intvolume: '         1'
language:
- iso: eng
page: 320-323
publication: 29th European Solid-State Device Research Conference
status: public
title: High rate CVD-diamond etching for high temperature pressure sensor applications
type: conference
user_id: '20179'
volume: 1
year: '1999'
...
---
_id: '39893'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Horstmann JT, Hilleringmann U, Goser K. Correlation Analysis of the Statistical
    Electrical Parameter Fluctuations in 50 nm MOS-Transistors. In: <i>28th European
    Solid-State Device Research Conference</i>. ; 1998:512-515.'
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (1998). Correlation Analysis
    of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors.
    <i>28th European Solid-State Device Research Conference</i>, 512–515.
  bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_1998, title={Correlation Analysis
    of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors},
    booktitle={28th European Solid-State Device Research Conference}, author={Horstmann,
    J.T. and Hilleringmann, Ulrich and Goser, K.}, year={1998}, pages={512–515} }'
  chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Correlation Analysis
    of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.”
    In <i>28th European Solid-State Device Research Conference</i>, 512–15, 1998.
  ieee: J. T. Horstmann, U. Hilleringmann, and K. Goser, “Correlation Analysis of
    the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors,” in
    <i>28th European Solid-State Device Research Conference</i>, 1998, pp. 512–515.
  mla: Horstmann, J. T., et al. “Correlation Analysis of the Statistical Electrical
    Parameter Fluctuations in 50 Nm MOS-Transistors.” <i>28th European Solid-State
    Device Research Conference</i>, 1998, pp. 512–15.
  short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State
    Device Research Conference, 1998, pp. 512–515.'
date_created: 2023-01-25T09:15:49Z
date_updated: 2023-03-21T09:57:47Z
department:
- _id: '59'
language:
- iso: eng
page: 512-515
publication: 28th European Solid-State Device Research Conference
status: public
title: Correlation Analysis of the Statistical Electrical Parameter Fluctuations in
  50 nm MOS-Transistors
type: conference
user_id: '20179'
year: '1998'
...
---
_id: '39896'
author:
- first_name: L.M.H.
  full_name: Heinrich, L.M.H.
  last_name: Heinrich
- first_name: J.
  full_name: Muller, J.
  last_name: Muller
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
- first_name: A.
  full_name: Holmes, A.
  last_name: Holmes
- first_name: Do-Hoon
  full_name: Hwang, Do-Hoon
  last_name: Hwang
- first_name: R.
  full_name: Stern, R.
  last_name: Stern
citation:
  ama: Heinrich LMH, Muller J, Hilleringmann U, et al. CMOS-compatible organic light-emitting
    diodes. <i>IEEE Transactions on Electron Devices</i>. 1997;44(8):1249-1252. doi:<a
    href="https://doi.org/10.1109/16.605463">10.1109/16.605463</a>
  apa: Heinrich, L. M. H., Muller, J., Hilleringmann, U., Goser, K. F., Holmes, A.,
    Hwang, D.-H., &#38; Stern, R. (1997). CMOS-compatible organic light-emitting diodes.
    <i>IEEE Transactions on Electron Devices</i>, <i>44</i>(8), 1249–1252. <a href="https://doi.org/10.1109/16.605463">https://doi.org/10.1109/16.605463</a>
  bibtex: '@article{Heinrich_Muller_Hilleringmann_Goser_Holmes_Hwang_Stern_1997, title={CMOS-compatible
    organic light-emitting diodes}, volume={44}, DOI={<a href="https://doi.org/10.1109/16.605463">10.1109/16.605463</a>},
    number={8}, journal={IEEE Transactions on Electron Devices}, author={Heinrich,
    L.M.H. and Muller, J. and Hilleringmann, Ulrich and Goser, K.F. and Holmes, A.
    and Hwang, Do-Hoon and Stern, R.}, year={1997}, pages={1249–1252} }'
  chicago: 'Heinrich, L.M.H., J. Muller, Ulrich Hilleringmann, K.F. Goser, A. Holmes,
    Do-Hoon Hwang, and R. Stern. “CMOS-Compatible Organic Light-Emitting Diodes.”
    <i>IEEE Transactions on Electron Devices</i> 44, no. 8 (1997): 1249–52. <a href="https://doi.org/10.1109/16.605463">https://doi.org/10.1109/16.605463</a>.'
  ieee: 'L. M. H. Heinrich <i>et al.</i>, “CMOS-compatible organic light-emitting
    diodes,” <i>IEEE Transactions on Electron Devices</i>, vol. 44, no. 8, pp. 1249–1252,
    1997, doi: <a href="https://doi.org/10.1109/16.605463">10.1109/16.605463</a>.'
  mla: Heinrich, L. M. H., et al. “CMOS-Compatible Organic Light-Emitting Diodes.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 44, no. 8, 1997, pp. 1249–52,
    doi:<a href="https://doi.org/10.1109/16.605463">10.1109/16.605463</a>.
  short: L.M.H. Heinrich, J. Muller, U. Hilleringmann, K.F. Goser, A. Holmes, D.-H.
    Hwang, R. Stern, IEEE Transactions on Electron Devices 44 (1997) 1249–1252.
date_created: 2023-01-25T09:17:03Z
date_updated: 2023-03-21T09:57:32Z
department:
- _id: '59'
doi: 10.1109/16.605463
intvolume: '        44'
issue: '8'
language:
- iso: eng
page: 1249-1252
publication: IEEE Transactions on Electron Devices
status: public
title: CMOS-compatible organic light-emitting diodes
type: journal_article
user_id: '20179'
volume: 44
year: '1997'
...
---
_id: '39902'
author:
- first_name: J.
  full_name: Muller, J.
  last_name: Muller
- first_name: G.
  full_name: Wirth, G.
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Muller J, Wirth G, Hilleringmann U, Goser K. Analyses of Sub 1/4-Micron MOS-Transistors
    by Visible Light Emission. In: <i>ESSDERC ’96: Proceedings of the 26th European
    Solid State Device Research Conference</i>. ; 1996:947-950.'
  apa: 'Muller, J., Wirth, G., Hilleringmann, U., &#38; Goser, K. (1996). Analyses
    of Sub 1/4-Micron MOS-Transistors by Visible Light Emission. <i>ESSDERC ’96: Proceedings
    of the 26th European Solid State Device Research Conference</i>, 947–950.'
  bibtex: '@inproceedings{Muller_Wirth_Hilleringmann_Goser_1996, title={Analyses of
    Sub 1/4-Micron MOS-Transistors by Visible Light Emission}, booktitle={ESSDERC
    ’96: Proceedings of the 26th European Solid State Device Research Conference},
    author={Muller, J. and Wirth, G. and Hilleringmann, Ulrich and Goser, K.}, year={1996},
    pages={947–950} }'
  chicago: 'Muller, J., G. Wirth, Ulrich Hilleringmann, and K. Goser. “Analyses of
    Sub 1/4-Micron MOS-Transistors by Visible Light Emission.” In <i>ESSDERC ’96:
    Proceedings of the 26th European Solid State Device Research Conference</i>, 947–50,
    1996.'
  ieee: 'J. Muller, G. Wirth, U. Hilleringmann, and K. Goser, “Analyses of Sub 1/4-Micron
    MOS-Transistors by Visible Light Emission,” in <i>ESSDERC ’96: Proceedings of
    the 26th European Solid State Device Research Conference</i>, 1996, pp. 947–950.'
  mla: 'Muller, J., et al. “Analyses of Sub 1/4-Micron MOS-Transistors by Visible
    Light Emission.” <i>ESSDERC ’96: Proceedings of the 26th European Solid State
    Device Research Conference</i>, 1996, pp. 947–50.'
  short: 'J. Muller, G. Wirth, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings
    of the 26th European Solid State Device Research Conference, 1996, pp. 947–950.'
date_created: 2023-01-25T09:21:38Z
date_updated: 2023-03-21T09:53:14Z
department:
- _id: '59'
language:
- iso: eng
page: 947-950
publication: 'ESSDERC ’96: Proceedings of the 26th European Solid State Device Research
  Conference'
status: public
title: Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission
type: conference
user_id: '20179'
year: '1996'
...