[{"department":[{"_id":"977"}],"user_id":"15911","_id":"64542","language":[{"iso":"eng"}],"publication":"Conference digest","type":"conference","status":"public","date_created":"2026-02-20T10:04:33Z","author":[{"first_name":"Nils Christopher","id":"115298","full_name":"Gerhardt, Nils Christopher","orcid":"0009-0002-5538-231X","last_name":"Gerhardt"},{"first_name":"Martin","last_name":"Hofmann","full_name":"Hofmann, Martin"},{"full_name":"Hantke, K.","last_name":"Hantke","first_name":"K."},{"last_name":"Stolz","full_name":"Stolz, Wolfgang","first_name":"Wolfgang"},{"first_name":"Stephan W.","last_name":"Koch","full_name":"Koch, Stephan W."},{"first_name":"Jörg","full_name":"Hader, Jörg","last_name":"Hader"},{"first_name":"Jerome V.","full_name":"Moloney, Jerome V.","last_name":"Moloney"},{"first_name":"A. Yu","last_name":"Egorov","full_name":"Egorov, A. Yu"},{"first_name":"Henning","last_name":"Riechert","full_name":"Riechert, Henning"}],"date_updated":"2026-02-23T13:15:45Z","doi":"10.1109/islc.2002.1041130","title":"Influence of growth conditions on the optical gain of 1.3 /spl mu/m (GaIn)(NAs)/GaAs lasers","page":"85 - 86","citation":{"ama":"Gerhardt NC, Hofmann M, Hantke K, et al. Influence of growth conditions on the optical gain of 1.3 /spl mu/m (GaIn)(NAs)/GaAs lasers. In: <i>Conference Digest</i>. ; 2002:85-86. doi:<a href=\"https://doi.org/10.1109/islc.2002.1041130\">10.1109/islc.2002.1041130</a>","chicago":"Gerhardt, Nils Christopher, Martin Hofmann, K. Hantke, Wolfgang Stolz, Stephan W. Koch, Jörg Hader, Jerome V. Moloney, A. Yu Egorov, and Henning Riechert. “Influence of Growth Conditions on the Optical Gain of 1.3 /Spl Mu/m (GaIn)(NAs)/GaAs Lasers.” In <i>Conference Digest</i>, 85–86, 2002. <a href=\"https://doi.org/10.1109/islc.2002.1041130\">https://doi.org/10.1109/islc.2002.1041130</a>.","ieee":"N. C. Gerhardt <i>et al.</i>, “Influence of growth conditions on the optical gain of 1.3 /spl mu/m (GaIn)(NAs)/GaAs lasers,” in <i>Conference digest</i>, 2002, pp. 85–86, doi: <a href=\"https://doi.org/10.1109/islc.2002.1041130\">10.1109/islc.2002.1041130</a>.","apa":"Gerhardt, N. C., Hofmann, M., Hantke, K., Stolz, W., Koch, S. W., Hader, J., Moloney, J. V., Egorov, A. Y., &#38; Riechert, H. (2002). Influence of growth conditions on the optical gain of 1.3 /spl mu/m (GaIn)(NAs)/GaAs lasers. <i>Conference Digest</i>, 85–86. <a href=\"https://doi.org/10.1109/islc.2002.1041130\">https://doi.org/10.1109/islc.2002.1041130</a>","bibtex":"@inproceedings{Gerhardt_Hofmann_Hantke_Stolz_Koch_Hader_Moloney_Egorov_Riechert_2002, title={Influence of growth conditions on the optical gain of 1.3 /spl mu/m (GaIn)(NAs)/GaAs lasers}, DOI={<a href=\"https://doi.org/10.1109/islc.2002.1041130\">10.1109/islc.2002.1041130</a>}, booktitle={Conference digest}, author={Gerhardt, Nils Christopher and Hofmann, Martin and Hantke, K. and Stolz, Wolfgang and Koch, Stephan W. and Hader, Jörg and Moloney, Jerome V. and Egorov, A. Yu and Riechert, Henning}, year={2002}, pages={85–86} }","short":"N.C. Gerhardt, M. Hofmann, K. Hantke, W. Stolz, S.W. Koch, J. Hader, J.V. Moloney, A.Y. Egorov, H. Riechert, in: Conference Digest, 2002, pp. 85–86.","mla":"Gerhardt, Nils Christopher, et al. “Influence of Growth Conditions on the Optical Gain of 1.3 /Spl Mu/m (GaIn)(NAs)/GaAs Lasers.” <i>Conference Digest</i>, 2002, pp. 85–86, doi:<a href=\"https://doi.org/10.1109/islc.2002.1041130\">10.1109/islc.2002.1041130</a>."},"year":"2002"},{"language":[{"iso":"eng"}],"user_id":"15911","department":[{"_id":"977"}],"_id":"64543","status":"public","type":"conference","publication":"Physics and simulation of optoelectronic devices IX","doi":"10.1117/12.432573","title":"Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm","date_created":"2026-02-20T10:04:34Z","author":[{"first_name":"Martin","full_name":"Hofmann, Martin","last_name":"Hofmann"},{"full_name":"Gerhardt, Nils Christopher","id":"115298","orcid":"0009-0002-5538-231X","last_name":"Gerhardt","first_name":"Nils Christopher"},{"first_name":"Anke","last_name":"Wagner","full_name":"Wagner, Anke"},{"first_name":"Christoph","full_name":"Ellmers, Christoph","last_name":"Ellmers"},{"last_name":"Höhnsdorf","full_name":"Höhnsdorf, Falko","first_name":"Falko"},{"first_name":"Jörg","last_name":"Koch","full_name":"Koch, Jörg"},{"first_name":"Simone","last_name":"Leu","full_name":"Leu, Simone"},{"first_name":"Wolfgang","full_name":"Stolz, Wolfgang","last_name":"Stolz"},{"last_name":"Rühle","full_name":"Rühle, Wolfgang W.","first_name":"Wolfgang W."}],"date_updated":"2026-02-20T10:07:08Z","citation":{"bibtex":"@inproceedings{Hofmann_Gerhardt_Wagner_Ellmers_Höhnsdorf_Koch_Leu_Stolz_Rühle_2001, title={Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm}, DOI={<a href=\"https://doi.org/10.1117/12.432573\">10.1117/12.432573</a>}, booktitle={Physics and simulation of optoelectronic devices IX}, author={Hofmann, Martin and Gerhardt, Nils Christopher and Wagner, Anke and Ellmers, Christoph and Höhnsdorf, Falko and Koch, Jörg and Leu, Simone and Stolz, Wolfgang and Rühle, Wolfgang W.}, year={2001}, pages={256–266} }","short":"M. Hofmann, N.C. Gerhardt, A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, W.W. Rühle, in: Physics and Simulation of Optoelectronic Devices IX, 2001, pp. 256–266.","mla":"Hofmann, Martin, et al. “Emission Dynamics of (GaIn)(NAs)/GaAs Lasers Emitting at 1.3 Μm.” <i>Physics and Simulation of Optoelectronic Devices IX</i>, 2001, pp. 256–66, doi:<a href=\"https://doi.org/10.1117/12.432573\">10.1117/12.432573</a>.","apa":"Hofmann, M., Gerhardt, N. C., Wagner, A., Ellmers, C., Höhnsdorf, F., Koch, J., Leu, S., Stolz, W., &#38; Rühle, W. W. (2001). Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm. <i>Physics and Simulation of Optoelectronic Devices IX</i>, 256–266. <a href=\"https://doi.org/10.1117/12.432573\">https://doi.org/10.1117/12.432573</a>","chicago":"Hofmann, Martin, Nils Christopher Gerhardt, Anke Wagner, Christoph Ellmers, Falko Höhnsdorf, Jörg Koch, Simone Leu, Wolfgang Stolz, and Wolfgang W. Rühle. “Emission Dynamics of (GaIn)(NAs)/GaAs Lasers Emitting at 1.3 Μm.” In <i>Physics and Simulation of Optoelectronic Devices IX</i>, 256–66, 2001. <a href=\"https://doi.org/10.1117/12.432573\">https://doi.org/10.1117/12.432573</a>.","ieee":"M. Hofmann <i>et al.</i>, “Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm,” in <i>Physics and simulation of optoelectronic devices IX</i>, 2001, pp. 256–266, doi: <a href=\"https://doi.org/10.1117/12.432573\">10.1117/12.432573</a>.","ama":"Hofmann M, Gerhardt NC, Wagner A, et al. Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm. In: <i>Physics and Simulation of Optoelectronic Devices IX</i>. ; 2001:256-266. doi:<a href=\"https://doi.org/10.1117/12.432573\">10.1117/12.432573</a>"},"page":"256 - 266","year":"2001"},{"_id":"64545","date_updated":"2026-02-20T10:22:51Z","department":[{"_id":"977"}],"date_created":"2026-02-20T10:04:34Z","user_id":"15911","author":[{"first_name":"Martin R.","last_name":"Hofmann","full_name":"Hofmann, Martin R."},{"last_name":"Gerhardt","orcid":"0009-0002-5538-231X","id":"115298","full_name":"Gerhardt, Nils Christopher","first_name":"Nils Christopher"},{"full_name":"Wagner, A.","last_name":"Wagner","first_name":"A."},{"full_name":"Ellmers, C.","last_name":"Ellmers","first_name":"C."},{"last_name":"Höhnsdorf","full_name":"Höhnsdorf, F.","first_name":"F."},{"full_name":"Koch, J.","last_name":"Koch","first_name":"J."},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."},{"first_name":"W.W.","last_name":"Rühle","full_name":"Rühle, W.W."},{"first_name":"J.","full_name":"Hader, J.","last_name":"Hader"},{"full_name":"Moloney, J.V.","last_name":"Moloney","first_name":"J.V."},{"first_name":"W.","full_name":"Stolz, W.","last_name":"Stolz"}],"title":"Optische Verstärkung von (GaIn)(NAs)/GaAs Halbleiterlasern","language":[{"iso":"eng"}],"publication":"65. Physikertagung & Frühjahrstagung des Arbeitskreises Festkörperphysik bei der DPG","type":"conference","year":"2001","status":"public","citation":{"apa":"Hofmann, M. R., Gerhardt, N. C., Wagner, A., Ellmers, C., Höhnsdorf, F., Koch, J., Koch, S. W., Rühle, W. W., Hader, J., Moloney, J. V., &#38; Stolz, W. (2001). Optische Verstärkung von (GaIn)(NAs)/GaAs Halbleiterlasern. <i>65. Physikertagung &#38; Frühjahrstagung Des Arbeitskreises Festkörperphysik Bei Der DPG</i>.","ama":"Hofmann MR, Gerhardt NC, Wagner A, et al. Optische Verstärkung von (GaIn)(NAs)/GaAs Halbleiterlasern. In: <i>65. Physikertagung &#38; Frühjahrstagung Des Arbeitskreises Festkörperphysik Bei Der DPG</i>. ; 2001.","mla":"Hofmann, Martin R., et al. “Optische Verstärkung von (GaIn)(NAs)/GaAs Halbleiterlasern.” <i>65. Physikertagung &#38; Frühjahrstagung Des Arbeitskreises Festkörperphysik Bei Der DPG</i>, 2001.","bibtex":"@inproceedings{Hofmann_Gerhardt_Wagner_Ellmers_Höhnsdorf_Koch_Koch_Rühle_Hader_Moloney_et al._2001, title={Optische Verstärkung von (GaIn)(NAs)/GaAs Halbleiterlasern}, booktitle={65. Physikertagung &#38; Frühjahrstagung des Arbeitskreises Festkörperphysik bei der DPG}, author={Hofmann, Martin R. and Gerhardt, Nils Christopher and Wagner, A. and Ellmers, C. and Höhnsdorf, F. and Koch, J. and Koch, S.W. and Rühle, W.W. and Hader, J. and Moloney, J.V. and et al.}, year={2001} }","short":"M.R. Hofmann, N.C. Gerhardt, A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, S.W. Koch, W.W. Rühle, J. Hader, J.V. Moloney, W. Stolz, in: 65. Physikertagung &#38; Frühjahrstagung Des Arbeitskreises Festkörperphysik Bei Der DPG, 2001.","ieee":"M. R. Hofmann <i>et al.</i>, “Optische Verstärkung von (GaIn)(NAs)/GaAs Halbleiterlasern,” 2001.","chicago":"Hofmann, Martin R., Nils Christopher Gerhardt, A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, S.W. Koch, et al. “Optische Verstärkung von (GaIn)(NAs)/GaAs Halbleiterlasern.” In <i>65. Physikertagung &#38; Frühjahrstagung Des Arbeitskreises Festkörperphysik Bei Der DPG</i>, 2001."}},{"doi":"10.1109/leos.2001.969307","title":"Physics of 1.3µm (GaIn)(NAs)/GaAs semiconductor lasers","volume":1,"date_created":"2026-02-20T10:04:34Z","author":[{"first_name":"Martin","full_name":"Hofmann, Martin","last_name":"Hofmann"},{"first_name":"Nils Christopher","id":"115298","full_name":"Gerhardt, Nils Christopher","last_name":"Gerhardt","orcid":"0009-0002-5538-231X"},{"first_name":"Anke","full_name":"Wagner, Anke","last_name":"Wagner"},{"full_name":"Stolz, Wolfgang","last_name":"Stolz","first_name":"Wolfgang"},{"full_name":"Koch, Stephan W.","last_name":"Koch","first_name":"Stephan W."},{"full_name":"Rühle, Wolfgang W.","last_name":"Rühle","first_name":"Wolfgang W."},{"full_name":"Hader, Jörg","last_name":"Hader","first_name":"Jörg"}],"date_updated":"2026-02-20T10:24:08Z","page":"326 - 327","intvolume":"         1","citation":{"apa":"Hofmann, M., Gerhardt, N. C., Wagner, A., Stolz, W., Koch, S. W., Rühle, W. W., &#38; Hader, J. (2001). Physics of 1.3µm (GaIn)(NAs)/GaAs semiconductor lasers. <i>LEOS 2001</i>, <i>1</i>, 326–327. <a href=\"https://doi.org/10.1109/leos.2001.969307\">https://doi.org/10.1109/leos.2001.969307</a>","short":"M. Hofmann, N.C. Gerhardt, A. Wagner, W. Stolz, S.W. Koch, W.W. Rühle, J. Hader, in: LEOS 2001, 2001, pp. 326–327.","bibtex":"@inproceedings{Hofmann_Gerhardt_Wagner_Stolz_Koch_Rühle_Hader_2001, title={Physics of 1.3µm (GaIn)(NAs)/GaAs semiconductor lasers}, volume={1}, DOI={<a href=\"https://doi.org/10.1109/leos.2001.969307\">10.1109/leos.2001.969307</a>}, booktitle={LEOS 2001}, author={Hofmann, Martin and Gerhardt, Nils Christopher and Wagner, Anke and Stolz, Wolfgang and Koch, Stephan W. and Rühle, Wolfgang W. and Hader, Jörg}, year={2001}, pages={326–327} }","mla":"Hofmann, Martin, et al. “Physics of 1.3µm (GaIn)(NAs)/GaAs Semiconductor Lasers.” <i>LEOS 2001</i>, vol. 1, 2001, pp. 326–27, doi:<a href=\"https://doi.org/10.1109/leos.2001.969307\">10.1109/leos.2001.969307</a>.","ama":"Hofmann M, Gerhardt NC, Wagner A, et al. Physics of 1.3µm (GaIn)(NAs)/GaAs semiconductor lasers. In: <i>LEOS 2001</i>. Vol 1. ; 2001:326-327. doi:<a href=\"https://doi.org/10.1109/leos.2001.969307\">10.1109/leos.2001.969307</a>","ieee":"M. Hofmann <i>et al.</i>, “Physics of 1.3µm (GaIn)(NAs)/GaAs semiconductor lasers,” in <i>LEOS 2001</i>, 2001, vol. 1, pp. 326–327, doi: <a href=\"https://doi.org/10.1109/leos.2001.969307\">10.1109/leos.2001.969307</a>.","chicago":"Hofmann, Martin, Nils Christopher Gerhardt, Anke Wagner, Wolfgang Stolz, Stephan W. Koch, Wolfgang W. Rühle, and Jörg Hader. “Physics of 1.3µm (GaIn)(NAs)/GaAs Semiconductor Lasers.” In <i>LEOS 2001</i>, 1:326–27, 2001. <a href=\"https://doi.org/10.1109/leos.2001.969307\">https://doi.org/10.1109/leos.2001.969307</a>."},"year":"2001","language":[{"iso":"eng"}],"department":[{"_id":"977"}],"user_id":"15911","_id":"64546","status":"public","publication":"LEOS 2001","type":"conference"},{"user_id":"15911","department":[{"_id":"977"}],"_id":"64547","language":[{"iso":"eng"}],"type":"book_chapter","publication":"Advances in Solid State Physics 41","status":"public","date_created":"2026-02-20T10:04:34Z","author":[{"full_name":"Hägele, Daniel","last_name":"Hägele","first_name":"Daniel"},{"last_name":"Gerhardt","orcid":"0009-0002-5538-231X","full_name":"Gerhardt, Nils Christopher","id":"115298","first_name":"Nils Christopher"},{"first_name":"Martin","full_name":"Hofmann, Martin","last_name":"Hofmann"},{"full_name":"Oestreich, Michael","last_name":"Oestreich","first_name":"Michael"},{"first_name":"Jens","last_name":"Hübner","full_name":"Hübner, Jens"},{"first_name":"Markus","last_name":"Bender","full_name":"Bender, Markus"},{"full_name":"Rühle, Wolfgang W.","last_name":"Rühle","first_name":"Wolfgang W."},{"last_name":"Kalt","full_name":"Kalt, Heinz","first_name":"Heinz"},{"first_name":"Thorsten","last_name":"Hartmann","full_name":"Hartmann, Thorsten"},{"first_name":"Peter J.","full_name":"Klar, Peter J.","last_name":"Klar"},{"full_name":"Heimbrodt, Wolfram","last_name":"Heimbrodt","first_name":"Wolfram"},{"first_name":"Wolfgang","last_name":"Stolz","full_name":"Stolz, Wolfgang"}],"date_updated":"2026-02-23T12:44:16Z","doi":"10.1007/3-540-44946-9_15","title":"Spintronics - Spin electronics and optoelectronics in semiconductors","citation":{"ieee":"D. Hägele <i>et al.</i>, “Spintronics - Spin electronics and optoelectronics in semiconductors,” in <i>Advances in Solid State Physics 41</i>, 2001, pp. 173–186.","chicago":"Hägele, Daniel, Nils Christopher Gerhardt, Martin Hofmann, Michael Oestreich, Jens Hübner, Markus Bender, Wolfgang W. Rühle, et al. “Spintronics - Spin Electronics and Optoelectronics in Semiconductors.” In <i>Advances in Solid State Physics 41</i>, 173–86, 2001. <a href=\"https://doi.org/10.1007/3-540-44946-9_15\">https://doi.org/10.1007/3-540-44946-9_15</a>.","ama":"Hägele D, Gerhardt NC, Hofmann M, et al. Spintronics - Spin electronics and optoelectronics in semiconductors. In: <i>Advances in Solid State Physics 41</i>. ; 2001:173-186. doi:<a href=\"https://doi.org/10.1007/3-540-44946-9_15\">10.1007/3-540-44946-9_15</a>","short":"D. Hägele, N.C. Gerhardt, M. Hofmann, M. Oestreich, J. Hübner, M. Bender, W.W. Rühle, H. Kalt, T. Hartmann, P.J. Klar, W. Heimbrodt, W. Stolz, in: Advances in Solid State Physics 41, 2001, pp. 173–186.","mla":"Hägele, Daniel, et al. “Spintronics - Spin Electronics and Optoelectronics in Semiconductors.” <i>Advances in Solid State Physics 41</i>, 2001, pp. 173–86, doi:<a href=\"https://doi.org/10.1007/3-540-44946-9_15\">10.1007/3-540-44946-9_15</a>.","bibtex":"@inbook{Hägele_Gerhardt_Hofmann_Oestreich_Hübner_Bender_Rühle_Kalt_Hartmann_Klar_et al._2001, title={Spintronics - Spin electronics and optoelectronics in semiconductors}, DOI={<a href=\"https://doi.org/10.1007/3-540-44946-9_15\">10.1007/3-540-44946-9_15</a>}, booktitle={Advances in Solid State Physics 41}, author={Hägele, Daniel and Gerhardt, Nils Christopher and Hofmann, Martin and Oestreich, Michael and Hübner, Jens and Bender, Markus and Rühle, Wolfgang W. and Kalt, Heinz and Hartmann, Thorsten and Klar, Peter J. and et al.}, year={2001}, pages={173–186} }","apa":"Hägele, D., Gerhardt, N. C., Hofmann, M., Oestreich, M., Hübner, J., Bender, M., Rühle, W. W., Kalt, H., Hartmann, T., Klar, P. J., Heimbrodt, W., &#38; Stolz, W. (2001). Spintronics - Spin electronics and optoelectronics in semiconductors. In <i>Advances in Solid State Physics 41</i> (pp. 173–186). <a href=\"https://doi.org/10.1007/3-540-44946-9_15\">https://doi.org/10.1007/3-540-44946-9_15</a>"},"page":"173 - 186","year":"2001"}]