@article{4810, author = {{Wecker, T. and Jostmeier, T. and Rieger, T. and Neumann, E. and Pawlis, A. and Betz, M. and Reuter, Dirk and As, Donat Josef}}, issn = {{0022-0248}}, journal = {{Journal of Crystal Growth}}, pages = {{149--153}}, publisher = {{Elsevier BV}}, title = {{{Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures}}}, doi = {{10.1016/j.jcrysgro.2017.01.022}}, volume = {{477}}, year = {{2017}}, } @article{4811, author = {{Deppe, Michael and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{8}}, publisher = {{Wiley}}, title = {{{Incorporation of germanium for n-type doping of cubic GaN}}}, doi = {{10.1002/pssb.201600700}}, volume = {{254}}, year = {{2017}}, } @article{4812, author = {{Czerniuk, T. and Ehrlich, T. and Wecker, T. and As, Donat Josef and Yakovlev, D. R. and Akimov, A. V. and Bayer, M.}}, issn = {{2331-7019}}, journal = {{Physical Review Applied}}, number = {{1}}, publisher = {{American Physical Society (APS)}}, title = {{{Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N}}}, doi = {{10.1103/physrevapplied.7.014006}}, volume = {{7}}, year = {{2017}}, } @article{4813, author = {{As, Donat Josef and Deppe, Michael and Gerlach, Jürgen and Reuter, Dirk}}, issn = {{2059-8521}}, journal = {{MRS Advances}}, number = {{05}}, pages = {{283--288}}, publisher = {{Cambridge University Press (CUP)}}, title = {{{Optical Properties of Germanium Doped Cubic GaN}}}, doi = {{10.1557/adv.2016.637}}, volume = {{2}}, year = {{2017}}, } @article{4814, author = {{Buß, J. H. and Schupp, T. and As, Donat Josef and Brandt, O. and Hägele, D. and Rudolph, J.}}, issn = {{2469-9950}}, journal = {{Physical Review B}}, number = {{23}}, publisher = {{American Physical Society (APS)}}, title = {{{Electron spin dynamics in cubic GaN}}}, doi = {{10.1103/physrevb.94.235202}}, volume = {{94}}, year = {{2016}}, } @article{4815, author = {{Righetti, V. A. N. and Gratens, X. and Chitta, V. A. and de Godoy, M. P. F. and Rodrigues, A. D. and Abramof, E. and Dias, J. F. and Schikora, D. and As, Donat Josef and Lischka, K.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Magnetic and structural properties of Fe-implanted cubic GaN}}}, doi = {{10.1063/1.4962275}}, volume = {{120}}, year = {{2016}}, } @article{4817, author = {{Rothfuchs, Charlotte and Kukharchyk, Nadezhda and Koppe, Tristan and Semond, Fabrice and Blumenthal, Sarah and Becker, Hans-Werner and As, Donat Josef and Hofsäss, Hans C. and Wieck, Andreas D. and Ludwig, Arne}}, issn = {{0168-583X}}, journal = {{Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}}, pages = {{1--5}}, publisher = {{Elsevier BV}}, title = {{{Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots}}}, doi = {{10.1016/j.nimb.2016.06.004}}, volume = {{383}}, year = {{2016}}, } @article{7055, author = {{Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}}, issn = {{0021-4922}}, journal = {{Japanese Journal of Applied Physics}}, number = {{5S}}, publisher = {{Japan Society of Applied Physics}}, title = {{{Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy}}}, doi = {{10.7567/jjap.55.05fg01}}, volume = {{55}}, year = {{2016}}, } @article{3888, abstract = {{We successfully developed a process to fabricate freestanding cubic aluminium nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots (QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE). To realize the photonic crystal (PhC) membrane we have chosen a triangular array of holes. The array was fabricated by electron beam lithography and several steps of reactive ion etching (RIE) with the help of a hard mask and an undercut of the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL) measurements of the photonic crystals, in particular of a H1 and a L3 cavity, and the emission of the QD ensemble were performed to characterize the samples. The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000 for two different modes of the L3 cavity, respectively. The energy of the fundamental modes is in good agreement to the numerical simulations. }}, author = {{Blumenthal, Sarah and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils and Meier, Cedrik and Reuter, Dirk and As, Donat J.}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, keywords = {{tet_topic_phc, tet_topic_qd}}, number = {{5-6}}, pages = {{292--296}}, publisher = {{Wiley}}, title = {{{Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots}}}, doi = {{10.1002/pssc.201600010}}, volume = {{13}}, year = {{2016}}, } @article{4240, abstract = {{Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films.}}, author = {{Rüsing, Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, keywords = {{cubic gallium nitride, dislocation density, HRXRD, Raman spectroscopy}}, number = {{4}}, pages = {{778--782}}, publisher = {{Wiley}}, title = {{{Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}}}, doi = {{10.1002/pssb.201552592}}, volume = {{253}}, year = {{2016}}, } @article{4819, author = {{Sergent, Sylvain and Kako, Satoshi and Bürger, Matthias and Blumenthal, Sarah and Iwamoto, Satoshi and As, Donat Josef and Arakawa, Yasuhiko}}, issn = {{1882-0778}}, journal = {{Applied Physics Express}}, number = {{1}}, publisher = {{Japan Society of Applied Physics}}, title = {{{Active zinc-blende III–nitride photonic structures on silicon}}}, doi = {{10.7567/apex.9.012002}}, volume = {{9}}, year = {{2015}}, } @article{4820, author = {{Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{22}}, publisher = {{AIP Publishing}}, title = {{{Temperature dependence of the electron Landé g-factor in cubic GaN}}}, doi = {{10.1063/1.4937128}}, volume = {{118}}, year = {{2015}}, } @article{4825, author = {{Schaefer, A. and Buß, J. H. and Schupp, T. and Zado, A. and As, Donat Josef and Hägele, D. and Rudolph, J.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{9}}, publisher = {{AIP Publishing}}, title = {{{Strain dependent electron spin dynamics in bulk cubic GaN}}}, doi = {{10.1063/1.4914069}}, volume = {{117}}, year = {{2015}}, } @article{7217, author = {{Jostmeier, Thorben and Wecker, Tobias and Reuter, Dirk and As, Donat Josef and Betz, Markus}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{21}}, publisher = {{AIP Publishing}}, title = {{{Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice}}}, doi = {{10.1063/1.4936330}}, volume = {{107}}, year = {{2015}}, } @article{4824, author = {{Wecker, T. and Hörich, F. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{5}}, pages = {{873--878}}, publisher = {{Wiley}}, title = {{{Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells}}}, doi = {{10.1002/pssb.201451531}}, volume = {{252}}, year = {{2014}}, } @article{8762, author = {{Sergent, S. and Kako, S. and Bürger, M. and Schupp, T. and As, Donat Josef and Arakawa, Y.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, title = {{{Polarization properties of single zinc-blende GaN/AlN quantum dots}}}, doi = {{10.1103/physrevb.90.235312}}, year = {{2014}}, } @article{4064, abstract = {{An anisotropic etching process for mesa structures using fluorinated plasma with hydrogen addition was developed in an electron cyclotron resonance setup. The evolution of the mesa morphology was studied in dependence on the gas composition, the applied bias and the pressure. The achieved side wall slope approached 90° with a negligible trenching. The aspect ratios of the fabricated structure in the developed residue free ECR plasma etching process were between 5 and 20.}}, author = {{Hiller, Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat J. and Pezoldt, Jörg}}, issn = {{1662-9752}}, journal = {{Materials Science Forum}}, pages = {{730--733}}, publisher = {{Trans Tech Publications}}, title = {{{Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures}}}, doi = {{10.4028/www.scientific.net/msf.778-780.730}}, volume = {{778-780}}, year = {{2014}}, } @article{3963, abstract = {{Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding microdisks were patterned by means of electron beam lithography and a two step reactive ion etching process. Micro-photoluminescence spectroscopy investigations were performed for optical characterization. We analyzed the mode spacing for disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional finite difference time domain calculations were in good agreement with the experimental data. Whispering gallery modes of the radial orders 1 and 2 were identified by means of simulated mode field distributions.}}, author = {{Bürger, M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat Josef}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{tet_topic_qd, tet_topic_microdisk}}, number = {{8}}, pages = {{081105}}, publisher = {{AIP Publishing}}, title = {{{Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots}}}, doi = {{10.1063/1.4793653}}, volume = {{102}}, year = {{2013}}, } @article{13524, author = {{Landmann, M. and Rauls, E. and Schmidt, Wolf Gero and Röppischer, Marcus and Cobet, Christoph and Esser, Norbert and Schupp, Thorsten and As, Donat J. and Feneberg, Martin and Goldhahn, Rüdiger}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{19}}, title = {{{Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN}}}, doi = {{10.1103/physrevb.87.195210}}, volume = {{87}}, year = {{2013}}, } @article{4333, author = {{Feneberg, Martin and Röppischer, Marcus and Cobet, Christoph and Esser, Norbert and Schörmann, Jörg and Schupp, Thorsten and As, Donat Josef and Hörich, Florian and Bläsing, Jürgen and Krost, Alois and Goldhahn, Rüdiger}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{15}}, publisher = {{American Physical Society (APS)}}, title = {{{Optical properties of cubic GaN from 1 to 20 eV}}}, doi = {{10.1103/physrevb.85.155207}}, volume = {{85}}, year = {{2012}}, }