@article{4116,
  abstract     = {{Anisotropic etching processes for mesa structure formation using fluorinated plasma
atmospheres in an electron cyclotron resonance (ECR) plasma etcher were studied on Novasic
substrates with 10 μm thick 3C-SiC(100) grown on Si(100). To achieve reasonable etching rates, a
special gas inlet system suitable for injecting SF6 into the high density downstream Ar ECR plasma
was designed. The influence of the etching mask material on the sidewall morphology was
investigated. Masking materials with small grain sizes are preferable to achieve a desired shape.
The evolution of the mesa form was investigated in dependence on the gas composition, the applied
bias, the pressure and the composition of the gas atmosphere. The achieved sidewall slope was 84.5
deg. The aspect ratios of the fabricated structures in the developed residue free ECR plasma etching
process were between 5 and 10. Mesa structures aligned to [100] and [110] directions were
fabricated.}},
  author       = {{Hiller, Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat J. and Pezoldt, Jörg}},
  issn         = {{1662-9752}},
  journal      = {{Materials Science Forum}},
  location     = {{Cleveland (USA)}},
  pages        = {{901--904}},
  publisher    = {{Trans Tech Publications}},
  title        = {{{ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures}}},
  doi          = {{10.4028/www.scientific.net/msf.717-720.901}},
  volume       = {{717-720}},
  year         = {{2012}},
}

@article{4146,
  abstract     = {{The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy.}},
  author       = {{Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and Lindner, Jörg and As, Donat}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{12}},
  publisher    = {{AIP Publishing}},
  title        = {{{Anti-phase domains in cubic GaN}}},
  doi          = {{10.1063/1.3666050}},
  volume       = {{110}},
  year         = {{2011}},
}

@article{13568,
  author       = {{Mietze, C. and Landmann, M. and Rauls, E. and Machhadani, H. and Sakr, S. and Tchernycheva, M. and Julien, F. H. and Schmidt, Wolf Gero and Lischka, K. and As, Donat Josef}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{19}},
  title        = {{{Band offsets in cubic GaN/AlN superlattices}}},
  doi          = {{10.1103/physrevb.83.195301}},
  volume       = {{83}},
  year         = {{2011}},
}

@article{13835,
  author       = {{Scholle, A. and Greulich-Weber, S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and Rauls, E. and Schmidt, Wolf Gero}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{7}},
  pages        = {{1728--1731}},
  title        = {{{Magnetic characterization of conductance electrons in GaN}}},
  doi          = {{10.1002/pssb.200983582}},
  volume       = {{247}},
  year         = {{2010}},
}

@inproceedings{4218,
  abstract     = {{In this work we focus on the fabrication of ohmic contacts and of Schottky barrier devices (SBD) on non-polar cubic GaN epilayers grown by molecular beam epitaxy (MBE). A Ti/Al/Ni/Au metallization was used for ohmic contacts and the contact resistance was measured by transmission line measurements (TLM). Ni, Pd, Ag and NiSi Schottky barrier devices 300 µm in diameter were fabricated by thermal evaporation using contact lithography on cubic GaN epilayers. The current-voltage (I-V) and the capacity-voltage (C-V) characteristics were studied at room temperature in detail. A clear rectifying behavior was measured in all SBDs. In the Ni and Ag SBDs an abnormal large leakage current under reverse bias was observed. Isochronal thermal annealing of these Ni and Ag based SBDs at 200°C in air improved the reverse characteristics by up to three orders of magnitude. This is in contrast to the Pd contacts, where the as grown contact showed already good performance and thermal annealing had nearly no influence on the I-V characteristics. For all SBDs the magnitude of the reverse current is generally larger than that expected due to thermionic emission and an exponential increase of the reverse current is observed with increasing reverse voltage. In-depth analysis of the I-V characteristic showed that a thin surface barrier is formed at the metal semiconductor interface and that crystal defects like dislocations may be the reasons for the discrepancy between experimental data and thermionic emission theory. }},
  author       = {{As, Donat J. and Tschumak, Elena and Laubenstein, Irina and Kemper, Ricarda M. and Lischka, Klaus}},
  booktitle    = {{Materials Research Society Symposium Proceedings}},
  pages        = {{3--8}},
  publisher    = {{Materials Research Society}},
  title        = {{{Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers}}},
  doi          = {{10.1557/proc-1108-a01-02}},
  volume       = {{1108}},
  year         = {{2009}},
}