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Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>383</i>, 1–5. <a href=\"https://doi.org/10.1016/j.nimb.2016.06.004\">https://doi.org/10.1016/j.nimb.2016.06.004</a>"},"page":"1-5","intvolume":"       383","date_updated":"2022-01-06T07:01:25Z","publisher":"Elsevier BV","author":[{"last_name":"Rothfuchs","full_name":"Rothfuchs, Charlotte","first_name":"Charlotte"},{"full_name":"Kukharchyk, Nadezhda","last_name":"Kukharchyk","first_name":"Nadezhda"},{"last_name":"Koppe","full_name":"Koppe, Tristan","first_name":"Tristan"},{"full_name":"Semond, Fabrice","last_name":"Semond","first_name":"Fabrice"},{"last_name":"Blumenthal","full_name":"Blumenthal, Sarah","first_name":"Sarah"},{"first_name":"Hans-Werner","full_name":"Becker, Hans-Werner","last_name":"Becker"},{"first_name":"Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat Josef"},{"first_name":"Hans C.","full_name":"Hofsäss, Hans C.","last_name":"Hofsäss"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"full_name":"Ludwig, Arne","last_name":"Ludwig","first_name":"Arne"}],"date_created":"2018-10-24T08:07:16Z","volume":383,"title":"Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots","doi":"10.1016/j.nimb.2016.06.004","type":"journal_article","publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","status":"public","_id":"4817","user_id":"14"},{"type":"journal_article","publication":"Japanese Journal of Applied Physics","status":"public","_id":"7055","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"article_number":"05FG01","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0021-4922","1347-4065"]},"issue":"5S","year":"2016","citation":{"bibtex":"@article{Wecker_Callsen_Hoffmann_Reuter_As_2016, title={Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy}, volume={55}, DOI={<a href=\"https://doi.org/10.7567/jjap.55.05fg01\">10.7567/jjap.55.05fg01</a>}, number={5S05FG01}, journal={Japanese Journal of Applied Physics}, publisher={Japan Society of Applied Physics}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}, year={2016} }","mla":"Wecker, Tobias, et al. “Photoluminescence Excitation Spectroscopy of Excited States of an Asymmetric Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular Beam Epitaxy.” <i>Japanese Journal of Applied Physics</i>, vol. 55, no. 5S, 05FG01, Japan Society of Applied Physics, 2016, doi:<a href=\"https://doi.org/10.7567/jjap.55.05fg01\">10.7567/jjap.55.05fg01</a>.","short":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Japanese Journal of Applied Physics 55 (2016).","apa":"Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., &#38; As, D. J. (2016). Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy. <i>Japanese Journal of Applied Physics</i>, <i>55</i>(5S). <a href=\"https://doi.org/10.7567/jjap.55.05fg01\">https://doi.org/10.7567/jjap.55.05fg01</a>","ieee":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy,” <i>Japanese Journal of Applied Physics</i>, vol. 55, no. 5S, 2016.","chicago":"Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef As. “Photoluminescence Excitation Spectroscopy of Excited States of an Asymmetric Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular Beam Epitaxy.” <i>Japanese Journal of Applied Physics</i> 55, no. 5S (2016). <a href=\"https://doi.org/10.7567/jjap.55.05fg01\">https://doi.org/10.7567/jjap.55.05fg01</a>.","ama":"Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy. <i>Japanese Journal of Applied Physics</i>. 2016;55(5S). doi:<a href=\"https://doi.org/10.7567/jjap.55.05fg01\">10.7567/jjap.55.05fg01</a>"},"intvolume":"        55","date_updated":"2022-01-06T07:03:27Z","publisher":"Japan Society of Applied Physics","author":[{"first_name":"Tobias","last_name":"Wecker","full_name":"Wecker, Tobias"},{"first_name":"Gordon","last_name":"Callsen","full_name":"Callsen, Gordon"},{"first_name":"Axel","last_name":"Hoffmann","full_name":"Hoffmann, Axel"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","id":"14"}],"date_created":"2019-01-29T09:21:21Z","volume":55,"title":"Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy","doi":"10.7567/jjap.55.05fg01"},{"file":[{"date_updated":"2018-08-13T09:20:05Z","creator":"hclaudia","date_created":"2018-08-13T09:20:05Z","file_size":1119165,"access_level":"closed","file_name":"2016-04 Blumenthal_et_al_Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots_physica_status_solidi_(c).pdf","file_id":"3889","content_type":"application/pdf","success":1,"relation":"main_file"}],"abstract":[{"lang":"eng","text":"We successfully developed a process to fabricate freestanding cubic aluminium nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots (QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE). To realize the photonic crystal (PhC) membrane we have chosen a triangular array of holes. The array was fabricated by electron beam lithography and several steps of reactive ion etching (RIE) with the help of a hard mask and an undercut of the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL) measurements of the photonic crystals, in particular of a H1 and a L3 cavity, and the emission of the QD ensemble were performed to characterize the samples. The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000 for two different modes of the L3 cavity, respectively. The energy of the fundamental modes is in good agreement to the numerical simulations. "}],"publication":"physica status solidi (c)","language":[{"iso":"eng"}],"ddc":["530"],"keyword":["tet_topic_phc","tet_topic_qd"],"year":"2016","issue":"5-6","title":"Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots","date_created":"2018-08-13T09:14:58Z","publisher":"Wiley","status":"public","type":"journal_article","file_date_updated":"2018-08-13T09:20:05Z","article_type":"original","user_id":"14931","department":[{"_id":"61"},{"_id":"284"},{"_id":"290"},{"_id":"292"},{"_id":"287"},{"_id":"35"},{"_id":"230"}],"_id":"3888","citation":{"apa":"Blumenthal, S., Bürger, M., Hildebrandt, A., Förstner, J., Weber, N., Meier, C., Reuter, D., &#38; As, D. J. (2016). Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. <i>Physica Status Solidi (c)</i>, <i>13</i>(5–6), 292–296. <a href=\"https://doi.org/10.1002/pssc.201600010\">https://doi.org/10.1002/pssc.201600010</a>","bibtex":"@article{Blumenthal_Bürger_Hildebrandt_Förstner_Weber_Meier_Reuter_As_2016, title={Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots}, volume={13}, DOI={<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>}, number={5–6}, journal={physica status solidi (c)}, publisher={Wiley}, author={Blumenthal, Sarah and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils and Meier, Cedrik and Reuter, Dirk and As, Donat J.}, year={2016}, pages={292–296} }","short":"S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier, D. Reuter, D.J. As, Physica Status Solidi (c) 13 (2016) 292–296.","mla":"Blumenthal, Sarah, et al. “Fabrication and Characterization of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.” <i>Physica Status Solidi (c)</i>, vol. 13, no. 5–6, Wiley, 2016, pp. 292–96, doi:<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>.","ama":"Blumenthal S, Bürger M, Hildebrandt A, et al. Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. <i>physica status solidi (c)</i>. 2016;13(5-6):292-296. doi:<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>","ieee":"S. Blumenthal <i>et al.</i>, “Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,” <i>physica status solidi (c)</i>, vol. 13, no. 5–6, pp. 292–296, 2016, doi: <a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>.","chicago":"Blumenthal, Sarah, Matthias Bürger, Andre Hildebrandt, Jens Förstner, Nils Weber, Cedrik Meier, Dirk Reuter, and Donat J. As. “Fabrication and Characterization of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.” <i>Physica Status Solidi (c)</i> 13, no. 5–6 (2016): 292–96. <a href=\"https://doi.org/10.1002/pssc.201600010\">https://doi.org/10.1002/pssc.201600010</a>."},"intvolume":"        13","page":"292-296","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"has_accepted_license":"1","doi":"10.1002/pssc.201600010","author":[{"full_name":"Blumenthal, Sarah","last_name":"Blumenthal","first_name":"Sarah"},{"first_name":"Matthias","last_name":"Bürger","full_name":"Bürger, Matthias"},{"last_name":"Hildebrandt","full_name":"Hildebrandt, Andre","first_name":"Andre"},{"full_name":"Förstner, Jens","id":"158","last_name":"Förstner","orcid":"0000-0001-7059-9862","first_name":"Jens"},{"full_name":"Weber, Nils","last_name":"Weber","first_name":"Nils"},{"first_name":"Cedrik","id":"20798","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat J.","first_name":"Donat J."}],"volume":13,"date_updated":"2023-10-09T09:06:08Z"},{"keyword":["cubic gallium nitride","dislocation density","HRXRD","Raman spectroscopy"],"language":[{"iso":"eng"}],"publication":"physica status solidi (b)","abstract":[{"lang":"eng","text":"Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films."}],"publisher":"Wiley","date_created":"2018-08-29T08:24:01Z","title":"Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC","issue":"4","year":"2016","project":[{"grant_number":"231447078","name":"TRR 142","_id":"53"},{"_id":"55","name":"TRR 142 - Project Area B"},{"grant_number":"231447078","_id":"68","name":"TRR 142 - Subproject B3"}],"_id":"4240","user_id":"14931","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"article_type":"original","type":"journal_article","status":"public","date_updated":"2023-10-09T08:48:35Z","author":[{"id":"22501","full_name":"Rüsing, Michael","orcid":"0000-0003-4682-4577","last_name":"Rüsing","first_name":"Michael"},{"last_name":"Wecker","full_name":"Wecker, T.","first_name":"T."},{"first_name":"Gerhard","last_name":"Berth","id":"53","full_name":"Berth, Gerhard"},{"first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat Josef"},{"last_name":"Zrenner","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","id":"606","first_name":"Artur"}],"volume":253,"doi":"10.1002/pssb.201552592","publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"citation":{"apa":"Rüsing, M., Wecker, T., Berth, G., As, D. J., &#38; Zrenner, A. (2016). Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>Physica Status Solidi (b)</i>, <i>253</i>(4), 778–782. <a href=\"https://doi.org/10.1002/pssb.201552592\">https://doi.org/10.1002/pssb.201552592</a>","mla":"Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i>, vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>.","short":"M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi (b) 253 (2016) 778–782.","bibtex":"@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253}, DOI={<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>}, number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing, Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur}, year={2016}, pages={778–782} }","ama":"Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>physica status solidi (b)</i>. 2016;253(4):778-782. doi:<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>","ieee":"M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” <i>physica status solidi (b)</i>, vol. 253, no. 4, pp. 778–782, 2016, doi: <a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>.","chicago":"Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i> 253, no. 4 (2016): 778–82. <a href=\"https://doi.org/10.1002/pssb.201552592\">https://doi.org/10.1002/pssb.201552592</a>."},"page":"778-782","intvolume":"       253"},{"status":"public","type":"journal_article","publication":"Applied Physics Express","article_number":"012002","user_id":"14","_id":"4819","citation":{"ama":"Sergent S, Kako S, Bürger M, et al. Active zinc-blende III–nitride photonic structures on silicon. <i>Applied Physics Express</i>. 2015;9(1). doi:<a href=\"https://doi.org/10.7567/apex.9.012002\">10.7567/apex.9.012002</a>","ieee":"S. Sergent <i>et al.</i>, “Active zinc-blende III–nitride photonic structures on silicon,” <i>Applied Physics Express</i>, vol. 9, no. 1, 2015.","chicago":"Sergent, Sylvain, Satoshi Kako, Matthias Bürger, Sarah Blumenthal, Satoshi Iwamoto, Donat Josef As, and Yasuhiko Arakawa. “Active Zinc-Blende III–Nitride Photonic Structures on Silicon.” <i>Applied Physics Express</i> 9, no. 1 (2015). <a href=\"https://doi.org/10.7567/apex.9.012002\">https://doi.org/10.7567/apex.9.012002</a>.","bibtex":"@article{Sergent_Kako_Bürger_Blumenthal_Iwamoto_As_Arakawa_2015, title={Active zinc-blende III–nitride photonic structures on silicon}, volume={9}, DOI={<a href=\"https://doi.org/10.7567/apex.9.012002\">10.7567/apex.9.012002</a>}, number={1012002}, journal={Applied Physics Express}, publisher={Japan Society of Applied Physics}, author={Sergent, Sylvain and Kako, Satoshi and Bürger, Matthias and Blumenthal, Sarah and Iwamoto, Satoshi and As, Donat Josef and Arakawa, Yasuhiko}, year={2015} }","mla":"Sergent, Sylvain, et al. “Active Zinc-Blende III–Nitride Photonic Structures on Silicon.” <i>Applied Physics Express</i>, vol. 9, no. 1, 012002, Japan Society of Applied Physics, 2015, doi:<a href=\"https://doi.org/10.7567/apex.9.012002\">10.7567/apex.9.012002</a>.","short":"S. Sergent, S. Kako, M. Bürger, S. Blumenthal, S. Iwamoto, D.J. As, Y. Arakawa, Applied Physics Express 9 (2015).","apa":"Sergent, S., Kako, S., Bürger, M., Blumenthal, S., Iwamoto, S., As, D. J., &#38; Arakawa, Y. (2015). Active zinc-blende III–nitride photonic structures on silicon. <i>Applied Physics Express</i>, <i>9</i>(1). <a href=\"https://doi.org/10.7567/apex.9.012002\">https://doi.org/10.7567/apex.9.012002</a>"},"intvolume":"         9","year":"2015","issue":"1","publication_status":"published","publication_identifier":{"issn":["1882-0778","1882-0786"]},"doi":"10.7567/apex.9.012002","title":"Active zinc-blende III–nitride photonic structures on silicon","date_created":"2018-10-24T08:17:54Z","author":[{"first_name":"Sylvain","full_name":"Sergent, Sylvain","last_name":"Sergent"},{"first_name":"Satoshi","full_name":"Kako, Satoshi","last_name":"Kako"},{"last_name":"Bürger","full_name":"Bürger, Matthias","first_name":"Matthias"},{"first_name":"Sarah","last_name":"Blumenthal","full_name":"Blumenthal, Sarah"},{"full_name":"Iwamoto, Satoshi","last_name":"Iwamoto","first_name":"Satoshi"},{"id":"14","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef"},{"first_name":"Yasuhiko","full_name":"Arakawa, Yasuhiko","last_name":"Arakawa"}],"volume":9,"date_updated":"2022-01-06T07:01:25Z","publisher":"Japan Society of Applied Physics"},{"issue":"22","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"citation":{"ieee":"J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Temperature dependence of the electron Landé g-factor in cubic GaN,” <i>Journal of Applied Physics</i>, vol. 118, no. 22, 2015.","chicago":"Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Temperature Dependence of the Electron Landé G-Factor in Cubic GaN.” <i>Journal of Applied Physics</i> 118, no. 22 (2015). <a href=\"https://doi.org/10.1063/1.4937128\">https://doi.org/10.1063/1.4937128</a>.","ama":"Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Temperature dependence of the electron Landé g-factor in cubic GaN. <i>Journal of Applied Physics</i>. 2015;118(22). doi:<a href=\"https://doi.org/10.1063/1.4937128\">10.1063/1.4937128</a>","short":"J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics 118 (2015).","mla":"Buß, J. H., et al. “Temperature Dependence of the Electron Landé G-Factor in Cubic GaN.” <i>Journal of Applied Physics</i>, vol. 118, no. 22, 225701, AIP Publishing, 2015, doi:<a href=\"https://doi.org/10.1063/1.4937128\">10.1063/1.4937128</a>.","bibtex":"@article{Buß_Schupp_As_Hägele_Rudolph_2015, title={Temperature dependence of the electron Landé g-factor in cubic GaN}, volume={118}, DOI={<a href=\"https://doi.org/10.1063/1.4937128\">10.1063/1.4937128</a>}, number={22225701}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2015} }","apa":"Buß, J. H., Schupp, T., As, D. J., Hägele, D., &#38; Rudolph, J. (2015). Temperature dependence of the electron Landé g-factor in cubic GaN. <i>Journal of Applied Physics</i>, <i>118</i>(22). <a href=\"https://doi.org/10.1063/1.4937128\">https://doi.org/10.1063/1.4937128</a>"},"intvolume":"       118","year":"2015","date_created":"2018-10-24T08:18:32Z","author":[{"last_name":"Buß","full_name":"Buß, J. H.","first_name":"J. H."},{"first_name":"T.","full_name":"Schupp, T.","last_name":"Schupp"},{"first_name":"Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat Josef"},{"last_name":"Hägele","full_name":"Hägele, D.","first_name":"D."},{"last_name":"Rudolph","full_name":"Rudolph, J.","first_name":"J."}],"volume":118,"date_updated":"2022-01-06T07:01:25Z","publisher":"AIP Publishing","doi":"10.1063/1.4937128","title":"Temperature dependence of the electron Landé g-factor in cubic GaN","type":"journal_article","publication":"Journal of Applied Physics","status":"public","user_id":"14","_id":"4820","article_number":"225701"},{"_id":"4825","user_id":"14","article_number":"093906","type":"journal_article","publication":"Journal of Applied Physics","status":"public","date_updated":"2022-01-06T07:01:25Z","publisher":"AIP Publishing","date_created":"2018-10-24T09:02:29Z","author":[{"last_name":"Schaefer","full_name":"Schaefer, A.","first_name":"A."},{"last_name":"Buß","full_name":"Buß, J. H.","first_name":"J. H."},{"last_name":"Schupp","full_name":"Schupp, T.","first_name":"T."},{"first_name":"A.","last_name":"Zado","full_name":"Zado, A."},{"first_name":"Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","full_name":"As, Donat Josef","id":"14"},{"last_name":"Hägele","full_name":"Hägele, D.","first_name":"D."},{"last_name":"Rudolph","full_name":"Rudolph, J.","first_name":"J."}],"volume":117,"title":"Strain dependent electron spin dynamics in bulk cubic GaN","doi":"10.1063/1.4914069","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"issue":"9","year":"2015","citation":{"ama":"Schaefer A, Buß JH, Schupp T, et al. Strain dependent electron spin dynamics in bulk cubic GaN. <i>Journal of Applied Physics</i>. 2015;117(9). doi:<a href=\"https://doi.org/10.1063/1.4914069\">10.1063/1.4914069</a>","ieee":"A. Schaefer <i>et al.</i>, “Strain dependent electron spin dynamics in bulk cubic GaN,” <i>Journal of Applied Physics</i>, vol. 117, no. 9, 2015.","chicago":"Schaefer, A., J. H. Buß, T. Schupp, A. Zado, Donat Josef As, D. Hägele, and J. Rudolph. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” <i>Journal of Applied Physics</i> 117, no. 9 (2015). <a href=\"https://doi.org/10.1063/1.4914069\">https://doi.org/10.1063/1.4914069</a>.","short":"A. Schaefer, J.H. Buß, T. Schupp, A. Zado, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics 117 (2015).","mla":"Schaefer, A., et al. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” <i>Journal of Applied Physics</i>, vol. 117, no. 9, 093906, AIP Publishing, 2015, doi:<a href=\"https://doi.org/10.1063/1.4914069\">10.1063/1.4914069</a>.","bibtex":"@article{Schaefer_Buß_Schupp_Zado_As_Hägele_Rudolph_2015, title={Strain dependent electron spin dynamics in bulk cubic GaN}, volume={117}, DOI={<a href=\"https://doi.org/10.1063/1.4914069\">10.1063/1.4914069</a>}, number={9093906}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schaefer, A. and Buß, J. H. and Schupp, T. and Zado, A. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2015} }","apa":"Schaefer, A., Buß, J. H., Schupp, T., Zado, A., As, D. J., Hägele, D., &#38; Rudolph, J. (2015). Strain dependent electron spin dynamics in bulk cubic GaN. <i>Journal of Applied Physics</i>, <i>117</i>(9). <a href=\"https://doi.org/10.1063/1.4914069\">https://doi.org/10.1063/1.4914069</a>"},"intvolume":"       117"},{"title":"Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice","doi":"10.1063/1.4936330","date_updated":"2022-01-06T07:03:29Z","publisher":"AIP Publishing","date_created":"2019-01-29T11:17:04Z","author":[{"last_name":"Jostmeier","full_name":"Jostmeier, Thorben","first_name":"Thorben"},{"full_name":"Wecker, Tobias","last_name":"Wecker","first_name":"Tobias"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat Josef"},{"first_name":"Markus","last_name":"Betz","full_name":"Betz, Markus"}],"volume":107,"year":"2015","citation":{"chicago":"Jostmeier, Thorben, Tobias Wecker, Dirk Reuter, Donat Josef As, and Markus Betz. “Ultrafast Carrier Dynamics and Resonant Inter-Miniband Nonlinearity of a Cubic GaN/AlN Superlattice.” <i>Applied Physics Letters</i> 107, no. 21 (2015). <a href=\"https://doi.org/10.1063/1.4936330\">https://doi.org/10.1063/1.4936330</a>.","ieee":"T. Jostmeier, T. Wecker, D. Reuter, D. J. As, and M. Betz, “Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice,” <i>Applied Physics Letters</i>, vol. 107, no. 21, 2015.","ama":"Jostmeier T, Wecker T, Reuter D, As DJ, Betz M. Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice. <i>Applied Physics Letters</i>. 2015;107(21). doi:<a href=\"https://doi.org/10.1063/1.4936330\">10.1063/1.4936330</a>","short":"T. Jostmeier, T. Wecker, D. Reuter, D.J. As, M. Betz, Applied Physics Letters 107 (2015).","mla":"Jostmeier, Thorben, et al. “Ultrafast Carrier Dynamics and Resonant Inter-Miniband Nonlinearity of a Cubic GaN/AlN Superlattice.” <i>Applied Physics Letters</i>, vol. 107, no. 21, 211101, AIP Publishing, 2015, doi:<a href=\"https://doi.org/10.1063/1.4936330\">10.1063/1.4936330</a>.","bibtex":"@article{Jostmeier_Wecker_Reuter_As_Betz_2015, title={Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice}, volume={107}, DOI={<a href=\"https://doi.org/10.1063/1.4936330\">10.1063/1.4936330</a>}, number={21211101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jostmeier, Thorben and Wecker, Tobias and Reuter, Dirk and As, Donat Josef and Betz, Markus}, year={2015} }","apa":"Jostmeier, T., Wecker, T., Reuter, D., As, D. J., &#38; Betz, M. (2015). Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice. <i>Applied Physics Letters</i>, <i>107</i>(21). <a href=\"https://doi.org/10.1063/1.4936330\">https://doi.org/10.1063/1.4936330</a>"},"intvolume":"       107","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"issue":"21","article_number":"211101","language":[{"iso":"eng"}],"_id":"7217","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"status":"public","type":"journal_article","publication":"Applied Physics Letters"},{"volume":252,"date_created":"2018-10-24T08:59:33Z","author":[{"last_name":"Wecker","full_name":"Wecker, T.","first_name":"T."},{"full_name":"Hörich, F.","last_name":"Hörich","first_name":"F."},{"first_name":"M.","last_name":"Feneberg","full_name":"Feneberg, M."},{"full_name":"Goldhahn, R.","last_name":"Goldhahn","first_name":"R."},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"first_name":"Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat Josef"}],"publisher":"Wiley","date_updated":"2022-01-06T07:01:25Z","doi":"10.1002/pssb.201451531","title":"Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells","issue":"5","publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","page":"873-878","intvolume":"       252","citation":{"apa":"Wecker, T., Hörich, F., Feneberg, M., Goldhahn, R., Reuter, D., &#38; As, D. J. (2014). Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells. <i>Physica Status Solidi (B)</i>, <i>252</i>(5), 873–878. <a href=\"https://doi.org/10.1002/pssb.201451531\">https://doi.org/10.1002/pssb.201451531</a>","short":"T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, Physica Status Solidi (B) 252 (2014) 873–878.","mla":"Wecker, T., et al. “Structural and Optical Properties of MBE-Grown Asymmetric Cubic GaN/AlxGa1-XN Double Quantum Wells.” <i>Physica Status Solidi (B)</i>, vol. 252, no. 5, Wiley, 2014, pp. 873–78, doi:<a href=\"https://doi.org/10.1002/pssb.201451531\">10.1002/pssb.201451531</a>.","bibtex":"@article{Wecker_Hörich_Feneberg_Goldhahn_Reuter_As_2014, title={Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells}, volume={252}, DOI={<a href=\"https://doi.org/10.1002/pssb.201451531\">10.1002/pssb.201451531</a>}, number={5}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker, T. and Hörich, F. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}, year={2014}, pages={873–878} }","ama":"Wecker T, Hörich F, Feneberg M, Goldhahn R, Reuter D, As DJ. Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells. <i>physica status solidi (b)</i>. 2014;252(5):873-878. doi:<a href=\"https://doi.org/10.1002/pssb.201451531\">10.1002/pssb.201451531</a>","chicago":"Wecker, T., F. Hörich, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat Josef As. “Structural and Optical Properties of MBE-Grown Asymmetric Cubic GaN/AlxGa1-XN Double Quantum Wells.” <i>Physica Status Solidi (B)</i> 252, no. 5 (2014): 873–78. <a href=\"https://doi.org/10.1002/pssb.201451531\">https://doi.org/10.1002/pssb.201451531</a>.","ieee":"T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D. J. As, “Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells,” <i>physica status solidi (b)</i>, vol. 252, no. 5, pp. 873–878, 2014."},"year":"2014","user_id":"42514","_id":"4824","language":[{"iso":"eng"}],"publication":"physica status solidi (b)","type":"journal_article","status":"public"},{"language":[{"iso":"eng"}],"_id":"8762","user_id":"14","department":[{"_id":"230"},{"_id":"429"}],"status":"public","type":"journal_article","publication":"Physical Review B","title":"Polarization properties of single zinc-blende GaN/AlN quantum dots","doi":"10.1103/physrevb.90.235312","date_updated":"2022-01-06T07:04:00Z","date_created":"2019-03-29T13:43:44Z","author":[{"first_name":"S.","full_name":"Sergent, S.","last_name":"Sergent"},{"first_name":"S.","last_name":"Kako","full_name":"Kako, S."},{"last_name":"Bürger","full_name":"Bürger, M.","first_name":"M."},{"full_name":"Schupp, T.","last_name":"Schupp","first_name":"T."},{"last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat Josef","first_name":"Donat Josef"},{"last_name":"Arakawa","full_name":"Arakawa, Y.","first_name":"Y."}],"year":"2014","citation":{"mla":"Sergent, S., et al. “Polarization Properties of Single Zinc-Blende GaN/AlN Quantum Dots.” <i>Physical Review B</i>, 2014, doi:<a href=\"https://doi.org/10.1103/physrevb.90.235312\">10.1103/physrevb.90.235312</a>.","bibtex":"@article{Sergent_Kako_Bürger_Schupp_As_Arakawa_2014, title={Polarization properties of single zinc-blende GaN/AlN quantum dots}, DOI={<a href=\"https://doi.org/10.1103/physrevb.90.235312\">10.1103/physrevb.90.235312</a>}, journal={Physical Review B}, author={Sergent, S. and Kako, S. and Bürger, M. and Schupp, T. and As, Donat Josef and Arakawa, Y.}, year={2014} }","short":"S. Sergent, S. Kako, M. Bürger, T. Schupp, D.J. As, Y. Arakawa, Physical Review B (2014).","apa":"Sergent, S., Kako, S., Bürger, M., Schupp, T., As, D. J., &#38; Arakawa, Y. (2014). Polarization properties of single zinc-blende GaN/AlN quantum dots. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.90.235312\">https://doi.org/10.1103/physrevb.90.235312</a>","ieee":"S. Sergent, S. Kako, M. Bürger, T. Schupp, D. J. As, and Y. Arakawa, “Polarization properties of single zinc-blende GaN/AlN quantum dots,” <i>Physical Review B</i>, 2014.","chicago":"Sergent, S., S. Kako, M. Bürger, T. Schupp, Donat Josef As, and Y. Arakawa. “Polarization Properties of Single Zinc-Blende GaN/AlN Quantum Dots.” <i>Physical Review B</i>, 2014. <a href=\"https://doi.org/10.1103/physrevb.90.235312\">https://doi.org/10.1103/physrevb.90.235312</a>.","ama":"Sergent S, Kako S, Bürger M, Schupp T, As DJ, Arakawa Y. Polarization properties of single zinc-blende GaN/AlN quantum dots. <i>Physical Review B</i>. 2014. doi:<a href=\"https://doi.org/10.1103/physrevb.90.235312\">10.1103/physrevb.90.235312</a>"},"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]}},{"publication":"Materials Science Forum","abstract":[{"lang":"eng","text":"An anisotropic etching process for mesa structures using fluorinated plasma with\r\nhydrogen addition was developed in an electron cyclotron resonance setup. The evolution of the\r\nmesa morphology was studied in dependence on the gas composition, the applied bias and the\r\npressure. The achieved side wall slope approached 90° with a negligible trenching. The aspect ratios\r\nof the fabricated structure in the developed residue free ECR plasma etching process were between\r\n5 and 20."}],"file":[{"content_type":"application/pdf","relation":"main_file","success":1,"date_created":"2018-08-22T12:20:24Z","creator":"hclaudia","date_updated":"2018-08-22T12:20:24Z","file_name":"2014_Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.pdf","access_level":"closed","file_id":"4065","file_size":882721}],"ddc":["530"],"language":[{"iso":"eng"}],"year":"2014","publisher":"Trans Tech Publications","date_created":"2018-08-22T12:17:30Z","title":"Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures","type":"journal_article","status":"public","_id":"4064","user_id":"14931","department":[{"_id":"286"}],"article_type":"original","file_date_updated":"2018-08-22T12:20:24Z","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1662-9752"]},"citation":{"ama":"Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>. 2014;778-780:730-733. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>","chicago":"Hiller, Lars, Thomas Stauden, Ricarda M. Kemper, Jörg Lindner, Donat J. As, and Jörg Pezoldt. “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i> 778–780 (2014): 730–33. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">https://doi.org/10.4028/www.scientific.net/msf.778-780.730</a>.","ieee":"L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures,” <i>Materials Science Forum</i>, vol. 778–780, pp. 730–733, 2014, doi: <a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>.","apa":"Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., &#38; Pezoldt, J. (2014). Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>, <i>778–780</i>, 730–733. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">https://doi.org/10.4028/www.scientific.net/msf.778-780.730</a>","mla":"Hiller, Lars, et al. “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i>, vol. 778–780, Trans Tech Publications, 2014, pp. 730–33, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>.","bibtex":"@article{Hiller_Stauden_Kemper_Lindner_As_Pezoldt_2014, title={Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures}, volume={778–780}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Hiller, Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat J. and Pezoldt, Jörg}, year={2014}, pages={730–733} }","short":"L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 778–780 (2014) 730–733."},"page":"730-733","date_updated":"2023-10-09T09:08:12Z","author":[{"first_name":"Lars","last_name":"Hiller","full_name":"Hiller, Lars"},{"first_name":"Thomas","full_name":"Stauden, Thomas","last_name":"Stauden"},{"last_name":"Kemper","full_name":"Kemper, Ricarda M.","first_name":"Ricarda M."},{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"},{"first_name":"Donat J.","last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat J."},{"last_name":"Pezoldt","full_name":"Pezoldt, Jörg","first_name":"Jörg"}],"volume":"778-780","doi":"10.4028/www.scientific.net/msf.778-780.730"},{"title":"Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots","publisher":"AIP Publishing","date_created":"2018-08-21T07:43:22Z","year":"2013","issue":"8","keyword":["tet_topic_qd","tet_topic_microdisk"],"ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"text":"Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding microdisks were patterned by means of electron beam lithography and a two step reactive ion etching process. Micro-photoluminescence spectroscopy investigations were performed for optical characterization. We analyzed the mode spacing for disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional finite difference time domain calculations were in good agreement\r\nwith the experimental data. Whispering gallery modes of the radial orders 1 and 2 were identified by means of simulated mode field distributions.","lang":"eng"}],"file":[{"relation":"main_file","content_type":"application/pdf","file_size":935911,"file_id":"3964","access_level":"open_access","file_name":"2013-02 Bürger,Ruth,Declair,Förstner,Meier,As_Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots.pdf","date_updated":"2018-09-04T20:08:52Z","creator":"hclaudia","date_created":"2018-08-21T07:47:02Z"}],"publication":"Applied Physics Letters","doi":"10.1063/1.4793653","oa":"1","date_updated":"2022-01-06T07:00:01Z","volume":102,"author":[{"first_name":"M.","last_name":"Bürger","full_name":"Bürger, M."},{"first_name":"M.","last_name":"Ruth","full_name":"Ruth, M."},{"first_name":"S.","full_name":"Declair, S.","last_name":"Declair"},{"first_name":"Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","id":"158","full_name":"Förstner, Jens"},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"},{"id":"14","full_name":"As, Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","first_name":"Donat Josef"}],"intvolume":"       102","page":"081105","citation":{"ama":"Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. <i>Applied Physics Letters</i>. 2013;102(8):081105. doi:<a href=\"https://doi.org/10.1063/1.4793653\">10.1063/1.4793653</a>","ieee":"M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,” <i>Applied Physics Letters</i>, vol. 102, no. 8, p. 081105, 2013.","chicago":"Bürger, M., M. Ruth, S. Declair, Jens Förstner, Cedrik Meier, and Donat Josef As. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar GaN Quantum Dots.” <i>Applied Physics Letters</i> 102, no. 8 (2013): 081105. <a href=\"https://doi.org/10.1063/1.4793653\">https://doi.org/10.1063/1.4793653</a>.","mla":"Bürger, M., et al. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar GaN Quantum Dots.” <i>Applied Physics Letters</i>, vol. 102, no. 8, AIP Publishing, 2013, p. 081105, doi:<a href=\"https://doi.org/10.1063/1.4793653\">10.1063/1.4793653</a>.","short":"M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics Letters 102 (2013) 081105.","bibtex":"@article{Bürger_Ruth_Declair_Förstner_Meier_As_2013, title={Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots}, volume={102}, DOI={<a href=\"https://doi.org/10.1063/1.4793653\">10.1063/1.4793653</a>}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bürger, M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat Josef}, year={2013}, pages={081105} }","apa":"Bürger, M., Ruth, M., Declair, S., Förstner, J., Meier, C., &#38; As, D. J. (2013). Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. <i>Applied Physics Letters</i>, <i>102</i>(8), 081105. <a href=\"https://doi.org/10.1063/1.4793653\">https://doi.org/10.1063/1.4793653</a>"},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"has_accepted_license":"1","publication_status":"published","article_type":"original","file_date_updated":"2018-09-04T20:08:52Z","_id":"3963","department":[{"_id":"15"},{"_id":"287"},{"_id":"284"},{"_id":"230"},{"_id":"35"}],"user_id":"14","urn":"39635","status":"public","type":"journal_article"},{"user_id":"14931","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"}],"_id":"13524","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public","author":[{"first_name":"M.","full_name":"Landmann, M.","last_name":"Landmann"},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"},{"full_name":"Röppischer, Marcus","last_name":"Röppischer","first_name":"Marcus"},{"first_name":"Christoph","last_name":"Cobet","full_name":"Cobet, Christoph"},{"first_name":"Norbert","full_name":"Esser, Norbert","last_name":"Esser"},{"first_name":"Thorsten","last_name":"Schupp","full_name":"Schupp, Thorsten"},{"first_name":"Donat J.","last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat J."},{"first_name":"Martin","full_name":"Feneberg, Martin","last_name":"Feneberg"},{"last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger","first_name":"Rüdiger"}],"date_created":"2019-09-30T14:08:49Z","volume":87,"date_updated":"2023-10-09T09:08:39Z","doi":"10.1103/physrevb.87.195210","title":"Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN","issue":"19","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"ieee":"M. Landmann <i>et al.</i>, “Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN,” <i>Physical Review B</i>, vol. 87, no. 19, 2013, doi: <a href=\"https://doi.org/10.1103/physrevb.87.195210\">10.1103/physrevb.87.195210</a>.","chicago":"Landmann, M., E. Rauls, Wolf Gero Schmidt, Marcus Röppischer, Christoph Cobet, Norbert Esser, Thorsten Schupp, Donat J. As, Martin Feneberg, and Rüdiger Goldhahn. “Transition Energies and Direct-Indirect Band Gap Crossing in Zinc-Blende AlxGa1−xN.” <i>Physical Review B</i> 87, no. 19 (2013). <a href=\"https://doi.org/10.1103/physrevb.87.195210\">https://doi.org/10.1103/physrevb.87.195210</a>.","ama":"Landmann M, Rauls E, Schmidt WG, et al. Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN. <i>Physical Review B</i>. 2013;87(19). doi:<a href=\"https://doi.org/10.1103/physrevb.87.195210\">10.1103/physrevb.87.195210</a>","apa":"Landmann, M., Rauls, E., Schmidt, W. G., Röppischer, M., Cobet, C., Esser, N., Schupp, T., As, D. J., Feneberg, M., &#38; Goldhahn, R. (2013). Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN. <i>Physical Review B</i>, <i>87</i>(19). <a href=\"https://doi.org/10.1103/physrevb.87.195210\">https://doi.org/10.1103/physrevb.87.195210</a>","mla":"Landmann, M., et al. “Transition Energies and Direct-Indirect Band Gap Crossing in Zinc-Blende AlxGa1−xN.” <i>Physical Review B</i>, vol. 87, no. 19, 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.195210\">10.1103/physrevb.87.195210</a>.","short":"M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T. Schupp, D.J. As, M. Feneberg, R. Goldhahn, Physical Review B 87 (2013).","bibtex":"@article{Landmann_Rauls_Schmidt_Röppischer_Cobet_Esser_Schupp_As_Feneberg_Goldhahn_2013, title={Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN}, volume={87}, DOI={<a href=\"https://doi.org/10.1103/physrevb.87.195210\">10.1103/physrevb.87.195210</a>}, number={19}, journal={Physical Review B}, author={Landmann, M. and Rauls, E. and Schmidt, Wolf Gero and Röppischer, Marcus and Cobet, Christoph and Esser, Norbert and Schupp, Thorsten and As, Donat J. and Feneberg, Martin and Goldhahn, Rüdiger}, year={2013} }"},"intvolume":"        87","year":"2013"},{"_id":"4333","user_id":"14","type":"journal_article","publication":"Physical Review B","status":"public","date_updated":"2022-01-06T07:00:56Z","publisher":"American Physical Society (APS)","author":[{"full_name":"Feneberg, Martin","last_name":"Feneberg","first_name":"Martin"},{"first_name":"Marcus","full_name":"Röppischer, Marcus","last_name":"Röppischer"},{"first_name":"Christoph","full_name":"Cobet, Christoph","last_name":"Cobet"},{"last_name":"Esser","full_name":"Esser, Norbert","first_name":"Norbert"},{"first_name":"Jörg","last_name":"Schörmann","full_name":"Schörmann, Jörg"},{"last_name":"Schupp","full_name":"Schupp, Thorsten","first_name":"Thorsten"},{"first_name":"Donat Josef","full_name":"As, Donat Josef","id":"14","orcid":"0000-0003-1121-3565","last_name":"As"},{"first_name":"Florian","last_name":"Hörich","full_name":"Hörich, Florian"},{"full_name":"Bläsing, Jürgen","last_name":"Bläsing","first_name":"Jürgen"},{"last_name":"Krost","full_name":"Krost, Alois","first_name":"Alois"},{"full_name":"Goldhahn, Rüdiger","last_name":"Goldhahn","first_name":"Rüdiger"}],"date_created":"2018-08-30T14:00:50Z","volume":85,"title":"Optical properties of cubic GaN from 1 to 20 eV","doi":"10.1103/physrevb.85.155207","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"issue":"15","year":"2012","citation":{"apa":"Feneberg, M., Röppischer, M., Cobet, C., Esser, N., Schörmann, J., Schupp, T., … Goldhahn, R. 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Optical properties of cubic GaN from 1 to 20 eV. <i>Physical Review B</i>, <i>85</i>(15). <a href=\"https://doi.org/10.1103/physrevb.85.155207\">https://doi.org/10.1103/physrevb.85.155207</a>","bibtex":"@article{Feneberg_Röppischer_Cobet_Esser_Schörmann_Schupp_As_Hörich_Bläsing_Krost_et al._2012, title={Optical properties of cubic GaN from 1 to 20 eV}, volume={85}, DOI={<a href=\"https://doi.org/10.1103/physrevb.85.155207\">10.1103/physrevb.85.155207</a>}, number={15}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Feneberg, Martin and Röppischer, Marcus and Cobet, Christoph and Esser, Norbert and Schörmann, Jörg and Schupp, Thorsten and As, Donat Josef and Hörich, Florian and Bläsing, Jürgen and Krost, Alois and et al.}, year={2012} }","mla":"Feneberg, Martin, et al. “Optical Properties of Cubic GaN from 1 to 20 EV.” <i>Physical Review B</i>, vol. 85, no. 15, American Physical Society (APS), 2012, doi:<a href=\"https://doi.org/10.1103/physrevb.85.155207\">10.1103/physrevb.85.155207</a>.","short":"M. 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