[{"year":"2023","citation":{"chicago":"Baron, Elias, Rüdiger Goldhahn, Shirly Espinoza, Martin Zahradník, Mateusz Rebarz, Jakob Andreasson, Michael Deppe, Donat Josef As, and Martin Feneberg. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination of the Dielectric Function.” <i>Journal of Applied Physics</i> 134, no. 7 (2023). <a href=\"https://doi.org/10.1063/5.0153091\">https://doi.org/10.1063/5.0153091</a>.","ieee":"E. Baron <i>et al.</i>, “Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function,” <i>Journal of Applied Physics</i>, vol. 134, no. 7, 2023, doi: <a href=\"https://doi.org/10.1063/5.0153091\">10.1063/5.0153091</a>.","ama":"Baron E, Goldhahn R, Espinoza S, et al. Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. <i>Journal of Applied Physics</i>. 2023;134(7). doi:<a href=\"https://doi.org/10.1063/5.0153091\">10.1063/5.0153091</a>","apa":"Baron, E., Goldhahn, R., Espinoza, S., Zahradník, M., Rebarz, M., Andreasson, J., Deppe, M., As, D. J., &#38; Feneberg, M. (2023). Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. <i>Journal of Applied Physics</i>, <i>134</i>(7). <a href=\"https://doi.org/10.1063/5.0153091\">https://doi.org/10.1063/5.0153091</a>","short":"E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023).","bibtex":"@article{Baron_Goldhahn_Espinoza_Zahradník_Rebarz_Andreasson_Deppe_As_Feneberg_2023, title={Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function}, volume={134}, DOI={<a href=\"https://doi.org/10.1063/5.0153091\">10.1063/5.0153091</a>}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Baron, Elias and Goldhahn, Rüdiger and Espinoza, Shirly and Zahradník, Martin and Rebarz, Mateusz and Andreasson, Jakob and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2023} }","mla":"Baron, Elias, et al. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination of the Dielectric Function.” <i>Journal of Applied Physics</i>, vol. 134, no. 7, AIP Publishing, 2023, doi:<a href=\"https://doi.org/10.1063/5.0153091\">10.1063/5.0153091</a>."},"intvolume":"       134","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"issue":"7","title":"Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function","doi":"10.1063/5.0153091","publisher":"AIP Publishing","date_updated":"2023-10-09T09:17:15Z","author":[{"full_name":"Baron, Elias","last_name":"Baron","first_name":"Elias"},{"last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger","first_name":"Rüdiger"},{"first_name":"Shirly","full_name":"Espinoza, Shirly","last_name":"Espinoza"},{"first_name":"Martin","full_name":"Zahradník, Martin","last_name":"Zahradník"},{"first_name":"Mateusz","full_name":"Rebarz, Mateusz","last_name":"Rebarz"},{"first_name":"Jakob","last_name":"Andreasson","full_name":"Andreasson, Jakob"},{"full_name":"Deppe, Michael","last_name":"Deppe","first_name":"Michael"},{"orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat Josef","first_name":"Donat Josef"},{"first_name":"Martin","full_name":"Feneberg, Martin","last_name":"Feneberg"}],"date_created":"2023-08-18T08:17:41Z","volume":134,"abstract":[{"lang":"eng","text":"<jats:p>An ultra-fast change of the absorption onset for zincblende gallium-nitride (zb-GaN) (fundamental bandgap: 3.23 eV) is observed by investigating the imaginary part of the dielectric function using time-dependent femtosecond pump–probe spectroscopic ellipsometry between 2.9 and 3.7 eV. The 266 nm (4.66 eV) pump pulses induce a large electron–hole pair concentration up to 4×1020cm−3, which shift the transition energy between conduction and valence bands due to many-body effects up to ≈500 meV. Here, the absorption onset increases due to band filling while the bandgap renormalization at the same time decreases the bandgap. Additionally, the absorption of the pump-beam creates a free-carrier profile within the 605 nm zb-GaN layer with high free-carrier concentrations at the surface, and low concentrations at the interface to the substrate. This leads to varying optical properties from the sample surface (high transition energy) to substrate (low transition energy), which are taken into account by grading analysis for an accurate description of the experimental data. For this, a model describing the time- and position-dependent free-carrier concentration is formulated by considering the relaxation, recombination, and diffusion of those carriers. We provide a quantitative analysis of optical experimental data (ellipsometric angles Ψ and Δ) as well as a plot for the time-dependent change of the imaginary part of the dielectric function.</jats:p>"}],"status":"public","type":"journal_article","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"language":[{"iso":"eng"}],"_id":"46573","user_id":"14931","department":[{"_id":"15"},{"_id":"230"}]},{"year":"2023","citation":{"apa":"Littmann, M., Reuter, D., &#38; As, D. J. (2023). Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. <i>Physica Status Solidi (b)</i>, <i>260</i>(7). <a href=\"https://doi.org/10.1002/pssb.202300034\">https://doi.org/10.1002/pssb.202300034</a>","short":"M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).","bibtex":"@article{Littmann_Reuter_As_2023, title={Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy}, volume={260}, DOI={<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Littmann, Mario and Reuter, Dirk and As, Donat Josef}, year={2023} }","mla":"Littmann, Mario, et al. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i>, vol. 260, no. 7, Wiley, 2023, doi:<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>.","chicago":"Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i> 260, no. 7 (2023). <a href=\"https://doi.org/10.1002/pssb.202300034\">https://doi.org/10.1002/pssb.202300034</a>.","ieee":"M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” <i>physica status solidi (b)</i>, vol. 260, no. 7, 2023, doi: <a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>.","ama":"Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. <i>physica status solidi (b)</i>. 2023;260(7). doi:<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>"},"intvolume":"       260","publication_status":"published","publication_identifier":{"issn":["0370-1972","1521-3951"]},"issue":"7","title":"Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy","doi":"10.1002/pssb.202300034","date_updated":"2023-07-25T08:07:20Z","publisher":"Wiley","date_created":"2023-07-25T08:06:13Z","author":[{"first_name":"Mario","full_name":"Littmann, Mario","last_name":"Littmann"},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat Josef"}],"volume":260,"status":"public","type":"journal_article","publication":"physica status solidi (b)","keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"46132","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}]},{"type":"journal_article","publication":"ACS Applied Materials &amp; Interfaces","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"46741","language":[{"iso":"eng"}],"keyword":["General Materials Science"],"issue":"33","publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"citation":{"ama":"Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N. <i>ACS Applied Materials &#38;amp; Interfaces</i>. 2023;15(33):39513-39522. doi:<a href=\"https://doi.org/10.1021/acsami.3c06319\">10.1021/acsami.3c06319</a>","ieee":"M. F. Zscherp <i>et al.</i>, “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N,” <i>ACS Applied Materials &#38;amp; Interfaces</i>, vol. 15, no. 33, pp. 39513–39522, 2023, doi: <a href=\"https://doi.org/10.1021/acsami.3c06319\">10.1021/acsami.3c06319</a>.","chicago":"Zscherp, Mario Fabian, Silas Aurel Jentsch, Marius Johannes Müller, Vitalii Lider, Celina Becker, Limei Chen, Mario Littmann, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N.” <i>ACS Applied Materials &#38;amp; Interfaces</i> 15, no. 33 (2023): 39513–22. <a href=\"https://doi.org/10.1021/acsami.3c06319\">https://doi.org/10.1021/acsami.3c06319</a>.","apa":"Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen, L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J., Volz, K., Chatterjee, S., &#38; Schörmann, J. (2023). Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N. <i>ACS Applied Materials &#38;amp; Interfaces</i>, <i>15</i>(33), 39513–39522. <a href=\"https://doi.org/10.1021/acsami.3c06319\">https://doi.org/10.1021/acsami.3c06319</a>","mla":"Zscherp, Mario Fabian, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N.” <i>ACS Applied Materials &#38;amp; Interfaces</i>, vol. 15, no. 33, American Chemical Society (ACS), 2023, pp. 39513–22, doi:<a href=\"https://doi.org/10.1021/acsami.3c06319\">10.1021/acsami.3c06319</a>.","short":"M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials &#38;amp; Interfaces 15 (2023) 39513–39522.","bibtex":"@article{Zscherp_Jentsch_Müller_Lider_Becker_Chen_Littmann_Meier_Beyer_Hofmann_et al._2023, title={Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N}, volume={15}, DOI={<a href=\"https://doi.org/10.1021/acsami.3c06319\">10.1021/acsami.3c06319</a>}, number={33}, journal={ACS Applied Materials &#38;amp; Interfaces}, publisher={American Chemical Society (ACS)}, author={Zscherp, Mario Fabian and Jentsch, Silas Aurel and Müller, Marius Johannes and Lider, Vitalii and Becker, Celina and Chen, Limei and Littmann, Mario and Meier, Falco and Beyer, Andreas and Hofmann, Detlev Michael and et al.}, year={2023}, pages={39513–39522} }"},"page":"39513-39522","intvolume":"        15","year":"2023","author":[{"last_name":"Zscherp","full_name":"Zscherp, Mario Fabian","first_name":"Mario Fabian"},{"last_name":"Jentsch","full_name":"Jentsch, Silas Aurel","first_name":"Silas Aurel"},{"full_name":"Müller, Marius Johannes","last_name":"Müller","first_name":"Marius Johannes"},{"first_name":"Vitalii","last_name":"Lider","full_name":"Lider, Vitalii"},{"full_name":"Becker, Celina","last_name":"Becker","first_name":"Celina"},{"first_name":"Limei","last_name":"Chen","full_name":"Chen, Limei"},{"full_name":"Littmann, Mario","last_name":"Littmann","first_name":"Mario"},{"first_name":"Falco","full_name":"Meier, Falco","last_name":"Meier"},{"first_name":"Andreas","last_name":"Beyer","full_name":"Beyer, Andreas"},{"first_name":"Detlev Michael","last_name":"Hofmann","full_name":"Hofmann, Detlev Michael"},{"first_name":"Donat Josef","full_name":"As, Donat Josef","id":"14","last_name":"As","orcid":"0000-0003-1121-3565"},{"full_name":"Klar, Peter Jens","last_name":"Klar","first_name":"Peter Jens"},{"first_name":"Kerstin","full_name":"Volz, Kerstin","last_name":"Volz"},{"first_name":"Sangam","last_name":"Chatterjee","full_name":"Chatterjee, Sangam"},{"first_name":"Jörg","last_name":"Schörmann","full_name":"Schörmann, Jörg"}],"date_created":"2023-08-28T06:45:20Z","volume":15,"publisher":"American Chemical Society (ACS)","date_updated":"2023-08-28T06:46:23Z","doi":"10.1021/acsami.3c06319","title":"Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N"},{"publication_identifier":{"issn":["0370-1972","1521-3951"]},"publication_status":"published","citation":{"ama":"Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. <i>physica status solidi (b)</i>. Published online 2022. doi:<a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>","ieee":"F. Meier <i>et al.</i>, “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” <i>physica status solidi (b)</i>, Art. no. 2200508, 2022, doi: <a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>.","chicago":"Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool, Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” <i>Physica Status Solidi (b)</i>, 2022. <a href=\"https://doi.org/10.1002/pssb.202200508\">https://doi.org/10.1002/pssb.202200508</a>.","apa":"Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter, D., &#38; As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. <i>Physica Status Solidi (b)</i>, Article 2200508. <a href=\"https://doi.org/10.1002/pssb.202200508\">https://doi.org/10.1002/pssb.202200508</a>","bibtex":"@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={<a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>}, number={2200508}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner, Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }","short":"F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).","mla":"Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” <i>Physica Status Solidi (b)</i>, 2200508, Wiley, 2022, doi:<a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>."},"year":"2022","date_created":"2023-01-04T14:51:51Z","author":[{"full_name":"Meier, Falco","last_name":"Meier","first_name":"Falco"},{"first_name":"Mario","full_name":"Littmann, Mario","last_name":"Littmann"},{"last_name":"Bürger","full_name":"Bürger, Julius","id":"46952","first_name":"Julius"},{"first_name":"Thomas","last_name":"Riedl","id":"36950","full_name":"Riedl, Thomas"},{"first_name":"Daniel","last_name":"Kool","id":"44586","full_name":"Kool, Daniel"},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"Donat Josef","id":"14","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As"}],"date_updated":"2023-01-04T14:53:24Z","publisher":"Wiley","doi":"10.1002/pssb.202200508","title":"Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks","publication":"physica status solidi (b)","type":"journal_article","status":"public","department":[{"_id":"15"}],"user_id":"77496","_id":"35232","language":[{"iso":"eng"}],"keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"article_number":"2200508"},{"publication_identifier":{"issn":["0022-3727","1361-6463"]},"publication_status":"published","citation":{"apa":"Baron, E., Feneberg, M., Goldhahn, R., Deppe, M., Tacken, F., &#38; As, D. J. (2021). Optical evidence of many-body effects in the zincblende Al$_\\mathrm{x}$Ga$_\\mathrm{1-x}$N alloy system. <i>Journal of Physics D: Applied Physics</i>. <a href=\"https://doi.org/10.1088/1361-6463/abb97a\">https://doi.org/10.1088/1361-6463/abb97a</a>","bibtex":"@article{Baron_Feneberg_Goldhahn_Deppe_Tacken_As_2021, title={Optical evidence of many-body effects in the zincblende Al$_\\mathrm{x}$Ga$_\\mathrm{1-x}$N alloy system}, DOI={<a href=\"https://doi.org/10.1088/1361-6463/abb97a\">10.1088/1361-6463/abb97a</a>}, number={025101}, journal={Journal of Physics D: Applied Physics}, author={Baron, Elias and Feneberg, Martin and Goldhahn, Rüdiger and Deppe, Michael and Tacken, Fabian and As, Donat Josef}, year={2021} }","short":"E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, D.J. As, Journal of Physics D: Applied Physics (2021).","mla":"Baron, Elias, et al. “Optical Evidence of Many-Body Effects in the Zincblende Al$_\\mathrm{x}$Ga$_\\mathrm{1-X}$N Alloy System.” <i>Journal of Physics D: Applied Physics</i>, 025101, 2021, doi:<a href=\"https://doi.org/10.1088/1361-6463/abb97a\">10.1088/1361-6463/abb97a</a>.","ieee":"E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, and D. J. As, “Optical evidence of many-body effects in the zincblende Al$_\\mathrm{x}$Ga$_\\mathrm{1-x}$N alloy system,” <i>Journal of Physics D: Applied Physics</i>, 2021.","chicago":"Baron, Elias, Martin Feneberg, Rüdiger Goldhahn, Michael Deppe, Fabian Tacken, and Donat Josef As. “Optical Evidence of Many-Body Effects in the Zincblende Al$_\\mathrm{x}$Ga$_\\mathrm{1-X}$N Alloy System.” <i>Journal of Physics D: Applied Physics</i>, 2021. <a href=\"https://doi.org/10.1088/1361-6463/abb97a\">https://doi.org/10.1088/1361-6463/abb97a</a>.","ama":"Baron E, Feneberg M, Goldhahn R, Deppe M, Tacken F, As DJ. Optical evidence of many-body effects in the zincblende Al$_\\mathrm{x}$Ga$_\\mathrm{1-x}$N alloy system. <i>Journal of Physics D: Applied Physics</i>. 2021. doi:<a href=\"https://doi.org/10.1088/1361-6463/abb97a\">10.1088/1361-6463/abb97a</a>"},"year":"2021","date_created":"2021-09-07T09:19:46Z","author":[{"first_name":"Elias","full_name":"Baron, Elias","last_name":"Baron"},{"last_name":"Feneberg","full_name":"Feneberg, Martin","first_name":"Martin"},{"first_name":"Rüdiger","last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger"},{"first_name":"Michael","full_name":"Deppe, Michael","last_name":"Deppe"},{"first_name":"Fabian","full_name":"Tacken, Fabian","last_name":"Tacken"},{"id":"14","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef"}],"date_updated":"2022-01-06T06:56:01Z","doi":"10.1088/1361-6463/abb97a","title":"Optical evidence of many-body effects in the zincblende Al$_\\mathrm{x}$Ga$_\\mathrm{1-x}$N alloy system","publication":"Journal of Physics D: Applied Physics","type":"journal_article","status":"public","department":[{"_id":"230"},{"_id":"429"}],"user_id":"14","_id":"23842","language":[{"iso":"eng"}],"article_number":"025101"},{"status":"public","type":"journal_article","article_number":"19081","article_type":"original","user_id":"14931","department":[{"_id":"15"},{"_id":"230"},{"_id":"289"}],"project":[{"_id":"53","name":"TRR 142","grant_number":"231447078"},{"name":"TRR 142 - Project Area A","_id":"54"},{"grant_number":"231447078","_id":"65","name":"TRR 142 - Subproject A8"},{"name":"TRR 142 - Project Area B","_id":"55"},{"name":"TRR 142 - Subproject B2","_id":"67"},{"grant_number":"231447078","_id":"63","name":"TRR 142 - Subproject A6"}],"_id":"25227","citation":{"apa":"Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D., Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., &#38; Cinchetti, M. (2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. <i>Scientific Reports</i>, <i>11</i>, Article 19081. <a href=\"https://doi.org/10.1038/s41598-021-98569-6\">https://doi.org/10.1038/s41598-021-98569-6</a>","bibtex":"@article{Hajlaoui_Ponzoni_Deppe_Henksmeier_As_Reuter_Zentgraf_Springholz_Schneider_Cramm_et al._2021, title={Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures}, volume={11}, DOI={<a href=\"https://doi.org/10.1038/s41598-021-98569-6\">10.1038/s41598-021-98569-6</a>}, number={19081}, journal={Scientific Reports}, author={Hajlaoui, Mahdi and Ponzoni, Stefano and Deppe, Michael and Henksmeier, Tobias and As, Donat Josef and Reuter, Dirk and Zentgraf, Thomas and Springholz, Gunther and Schneider, Claus Michael and Cramm, Stefan and et al.}, year={2021} }","short":"M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).","mla":"Hajlaoui, Mahdi, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” <i>Scientific Reports</i>, vol. 11, 19081, 2021, doi:<a href=\"https://doi.org/10.1038/s41598-021-98569-6\">10.1038/s41598-021-98569-6</a>.","ieee":"M. Hajlaoui <i>et al.</i>, “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” <i>Scientific Reports</i>, vol. 11, Art. no. 19081, 2021, doi: <a href=\"https://doi.org/10.1038/s41598-021-98569-6\">10.1038/s41598-021-98569-6</a>.","chicago":"Hajlaoui, Mahdi, Stefano Ponzoni, Michael Deppe, Tobias Henksmeier, Donat Josef As, Dirk Reuter, Thomas Zentgraf, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” <i>Scientific Reports</i> 11 (2021). <a href=\"https://doi.org/10.1038/s41598-021-98569-6\">https://doi.org/10.1038/s41598-021-98569-6</a>.","ama":"Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. <i>Scientific Reports</i>. 2021;11. doi:<a href=\"https://doi.org/10.1038/s41598-021-98569-6\">10.1038/s41598-021-98569-6</a>"},"intvolume":"        11","publication_status":"published","publication_identifier":{"issn":["2045-2322"]},"main_file_link":[{"open_access":"1","url":"https://www.nature.com/articles/s41598-021-98569-6"}],"doi":"10.1038/s41598-021-98569-6","author":[{"first_name":"Mahdi","full_name":"Hajlaoui, Mahdi","last_name":"Hajlaoui"},{"first_name":"Stefano","last_name":"Ponzoni","full_name":"Ponzoni, Stefano"},{"full_name":"Deppe, Michael","last_name":"Deppe","first_name":"Michael"},{"full_name":"Henksmeier, Tobias","last_name":"Henksmeier","first_name":"Tobias"},{"orcid":"0000-0003-1121-3565","last_name":"As","full_name":"As, Donat Josef","id":"14","first_name":"Donat Josef"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"Thomas","id":"30525","full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101","last_name":"Zentgraf"},{"first_name":"Gunther","full_name":"Springholz, Gunther","last_name":"Springholz"},{"full_name":"Schneider, Claus Michael","last_name":"Schneider","first_name":"Claus Michael"},{"first_name":"Stefan","full_name":"Cramm, Stefan","last_name":"Cramm"},{"first_name":"Mirko","last_name":"Cinchetti","full_name":"Cinchetti, Mirko"}],"volume":11,"date_updated":"2023-10-09T09:15:12Z","oa":"1","abstract":[{"lang":"eng","text":"<jats:title>Abstract</jats:title><jats:p>Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaging in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low-energy ARPES (photon energy ~ 7 eV) to increase depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion, because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low-energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples’ properties required to perform extremely low-energy ARPES experiments on electronic states buried in semiconductor heterostructures.</jats:p>"}],"publication":"Scientific Reports","language":[{"iso":"eng"}],"year":"2021","quality_controlled":"1","title":"Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures","date_created":"2021-10-01T07:29:15Z"},{"publication_identifier":{"issn":["2158-3226"]},"publication_status":"published","citation":{"apa":"Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &#38; As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). <i>AIP Advances</i>, Article 075013. <a href=\"https://doi.org/10.1063/5.0053865\">https://doi.org/10.1063/5.0053865</a>","short":"F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).","bibtex":"@article{Meier_Protte_Baron_Feneberg_Goldhahn_Reuter_As_2021, title={Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)}, DOI={<a href=\"https://doi.org/10.1063/5.0053865\">10.1063/5.0053865</a>}, number={075013}, journal={AIP Advances}, author={Meier, F. and Protte, M. and Baron, E. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}, year={2021} }","mla":"Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” <i>AIP Advances</i>, 075013, 2021, doi:<a href=\"https://doi.org/10.1063/5.0053865\">10.1063/5.0053865</a>.","ama":"Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). <i>AIP Advances</i>. Published online 2021. doi:<a href=\"https://doi.org/10.1063/5.0053865\">10.1063/5.0053865</a>","chicago":"Meier, F., M. Protte, E. Baron, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” <i>AIP Advances</i>, 2021. <a href=\"https://doi.org/10.1063/5.0053865\">https://doi.org/10.1063/5.0053865</a>.","ieee":"F. Meier <i>et al.</i>, “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” <i>AIP Advances</i>, Art. no. 075013, 2021, doi: <a href=\"https://doi.org/10.1063/5.0053865\">10.1063/5.0053865</a>."},"year":"2021","date_created":"2021-09-07T09:20:42Z","author":[{"full_name":"Meier, F.","last_name":"Meier","first_name":"F."},{"last_name":"Protte","full_name":"Protte, M.","first_name":"M."},{"first_name":"E.","last_name":"Baron","full_name":"Baron, E."},{"last_name":"Feneberg","full_name":"Feneberg, M.","first_name":"M."},{"first_name":"R.","full_name":"Goldhahn, R.","last_name":"Goldhahn"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat Josef"}],"date_updated":"2023-10-09T09:01:15Z","doi":"10.1063/5.0053865","title":"Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)","publication":"AIP Advances","type":"journal_article","status":"public","department":[{"_id":"230"},{"_id":"429"}],"user_id":"14931","_id":"23843","language":[{"iso":"eng"}],"article_number":"075013"},{"doi":"10.1007/s11664-019-07927-8","title":"A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs","author":[{"first_name":"Abbes","last_name":"Beloufa","full_name":"Beloufa, Abbes"},{"last_name":"Bouguenna","full_name":"Bouguenna, Driss","first_name":"Driss"},{"first_name":"Nawel","last_name":"Kermas","full_name":"Kermas, Nawel"},{"orcid":"0000-0003-1121-3565","last_name":"As","full_name":"As, Donat Josef","id":"14","first_name":"Donat Josef"}],"date_created":"2021-09-07T09:15:01Z","date_updated":"2022-01-06T06:56:01Z","page":"2008-2017","citation":{"chicago":"Beloufa, Abbes, Driss Bouguenna, Nawel Kermas, and Donat Josef As. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” <i>Journal of Electronic Materials</i>, 2020, 2008–17. <a href=\"https://doi.org/10.1007/s11664-019-07927-8\">https://doi.org/10.1007/s11664-019-07927-8</a>.","ieee":"A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” <i>Journal of Electronic Materials</i>, pp. 2008–2017, 2020.","ama":"Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. <i>Journal of Electronic Materials</i>. 2020:2008-2017. doi:<a href=\"https://doi.org/10.1007/s11664-019-07927-8\">10.1007/s11664-019-07927-8</a>","short":"A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.","bibtex":"@article{Beloufa_Bouguenna_Kermas_As_2020, title={A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs}, DOI={<a href=\"https://doi.org/10.1007/s11664-019-07927-8\">10.1007/s11664-019-07927-8</a>}, journal={Journal of Electronic Materials}, author={Beloufa, Abbes and Bouguenna, Driss and Kermas, Nawel and As, Donat Josef}, year={2020}, pages={2008–2017} }","mla":"Beloufa, Abbes, et al. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” <i>Journal of Electronic Materials</i>, 2020, pp. 2008–17, doi:<a href=\"https://doi.org/10.1007/s11664-019-07927-8\">10.1007/s11664-019-07927-8</a>.","apa":"Beloufa, A., Bouguenna, D., Kermas, N., &#38; As, D. J. (2020). A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. <i>Journal of Electronic Materials</i>, 2008–2017. <a href=\"https://doi.org/10.1007/s11664-019-07927-8\">https://doi.org/10.1007/s11664-019-07927-8</a>"},"year":"2020","publication_identifier":{"issn":["0361-5235","1543-186X"]},"publication_status":"published","language":[{"iso":"eng"}],"department":[{"_id":"230"}],"user_id":"14","_id":"23838","status":"public","publication":"Journal of Electronic Materials","type":"journal_article"},{"article_number":"1900522","language":[{"iso":"eng"}],"_id":"23840","department":[{"_id":"230"},{"_id":"429"}],"user_id":"14","status":"public","publication":"physica status solidi (b)","type":"journal_article","title":"Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN","doi":"10.1002/pssb.201900522","date_updated":"2022-01-06T06:56:01Z","date_created":"2021-09-07T09:17:31Z","author":[{"full_name":"Baron, Elias","last_name":"Baron","first_name":"Elias"},{"first_name":"Rüdiger","last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger"},{"first_name":"Michael","last_name":"Deppe","full_name":"Deppe, Michael"},{"first_name":"Donat Josef","id":"14","full_name":"As, Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565"},{"first_name":"Martin","full_name":"Feneberg, Martin","last_name":"Feneberg"}],"year":"2020","citation":{"ama":"Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. <i>physica status solidi (b)</i>. 2020. doi:<a href=\"https://doi.org/10.1002/pssb.201900522\">10.1002/pssb.201900522</a>","ieee":"E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” <i>physica status solidi (b)</i>, 2020.","chicago":"Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” <i>Physica Status Solidi (B)</i>, 2020. <a href=\"https://doi.org/10.1002/pssb.201900522\">https://doi.org/10.1002/pssb.201900522</a>.","bibtex":"@article{Baron_Goldhahn_Deppe_As_Feneberg_2020, title={Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}, DOI={<a href=\"https://doi.org/10.1002/pssb.201900522\">10.1002/pssb.201900522</a>}, number={1900522}, journal={physica status solidi (b)}, author={Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2020} }","mla":"Baron, Elias, et al. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” <i>Physica Status Solidi (B)</i>, 1900522, 2020, doi:<a href=\"https://doi.org/10.1002/pssb.201900522\">10.1002/pssb.201900522</a>.","short":"E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).","apa":"Baron, E., Goldhahn, R., Deppe, M., As, D. J., &#38; Feneberg, M. (2020). Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. <i>Physica Status Solidi (B)</i>. <a href=\"https://doi.org/10.1002/pssb.201900522\">https://doi.org/10.1002/pssb.201900522</a>"},"publication_identifier":{"issn":["0370-1972","1521-3951"]},"publication_status":"published"},{"doi":"10.1002/pssb.201900532","title":"Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N","date_created":"2021-09-07T09:18:26Z","author":[{"first_name":"Michael","full_name":"Deppe, Michael","last_name":"Deppe"},{"last_name":"Henksmeier","full_name":"Henksmeier, Tobias","first_name":"Tobias"},{"first_name":"Jürgen W.","full_name":"Gerlach, Jürgen W.","last_name":"Gerlach"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"orcid":"0000-0003-1121-3565","last_name":"As","full_name":"As, Donat Josef","id":"14","first_name":"Donat Josef"}],"date_updated":"2022-01-06T06:56:01Z","citation":{"apa":"Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &#38; As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>Physica Status Solidi (B)</i>. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>","short":"M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).","bibtex":"@article{Deppe_Henksmeier_Gerlach_Reuter_As_2020, title={Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N}, DOI={<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>}, number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}, year={2020} }","mla":"Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (B)</i>, 1900532, 2020, doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>.","ama":"Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>physica status solidi (b)</i>. 2020. doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>","chicago":"Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (B)</i>, 2020. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>.","ieee":"M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” <i>physica status solidi (b)</i>, 2020."},"year":"2020","publication_identifier":{"issn":["0370-1972","1521-3951"]},"publication_status":"published","language":[{"iso":"eng"}],"article_number":"1900532","department":[{"_id":"230"},{"_id":"429"}],"user_id":"14","_id":"23841","status":"public","publication":"physica status solidi (b)","type":"journal_article"},{"doi":"10.1103/physrevmaterials.3.104603","title":"Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3","date_created":"2021-09-07T08:40:08Z","author":[{"last_name":"Baron","full_name":"Baron, Elias","first_name":"Elias"},{"first_name":"Rüdiger","last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger"},{"first_name":"Michael","last_name":"Deppe","full_name":"Deppe, Michael"},{"id":"14","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef"},{"first_name":"Martin","full_name":"Feneberg, Martin","last_name":"Feneberg"}],"date_updated":"2022-01-06T06:56:01Z","citation":{"ieee":"E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” <i>Physical Review Materials</i>, 2019.","chicago":"Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm−3.” <i>Physical Review Materials</i>, 2019. <a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">https://doi.org/10.1103/physrevmaterials.3.104603</a>.","ama":"Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. <i>Physical Review Materials</i>. 2019. doi:<a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">10.1103/physrevmaterials.3.104603</a>","short":"E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).","mla":"Baron, Elias, et al. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm−3.” <i>Physical Review Materials</i>, 2019, doi:<a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">10.1103/physrevmaterials.3.104603</a>.","bibtex":"@article{Baron_Goldhahn_Deppe_As_Feneberg_2019, title={Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3}, DOI={<a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">10.1103/physrevmaterials.3.104603</a>}, journal={Physical Review Materials}, author={Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2019} }","apa":"Baron, E., Goldhahn, R., Deppe, M., As, D. J., &#38; Feneberg, M. (2019). Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. <i>Physical Review Materials</i>. <a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">https://doi.org/10.1103/physrevmaterials.3.104603</a>"},"year":"2019","publication_identifier":{"issn":["2475-9953"]},"publication_status":"published","language":[{"iso":"eng"}],"department":[{"_id":"230"},{"_id":"429"}],"user_id":"14","_id":"23831","status":"public","publication":"Physical Review Materials","type":"journal_article"},{"status":"public","type":"journal_article","publication":"Journal of Applied Physics","language":[{"iso":"eng"}],"article_number":"095703","user_id":"14","department":[{"_id":"230"},{"_id":"429"}],"project":[{"_id":"67","name":"TRR 142 - Subproject B2"}],"_id":"8646","citation":{"apa":"Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., &#38; As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. <i>Journal of Applied Physics</i>. <a href=\"https://doi.org/10.1063/1.5066095\">https://doi.org/10.1063/1.5066095</a>","mla":"Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” <i>Journal of Applied Physics</i>, 095703, 2019, doi:<a href=\"https://doi.org/10.1063/1.5066095\">10.1063/1.5066095</a>.","bibtex":"@article{Deppe_Gerlach_Shvarkov_Rogalla_Becker_Reuter_As_2019, title={Germanium doping of cubic GaN grown by molecular beam epitaxy}, DOI={<a href=\"https://doi.org/10.1063/1.5066095\">10.1063/1.5066095</a>}, number={095703}, journal={Journal of Applied Physics}, author={Deppe, M. and Gerlach, J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and As, Donat Josef}, year={2019} }","short":"M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).","ieee":"M. Deppe <i>et al.</i>, “Germanium doping of cubic GaN grown by molecular beam epitaxy,” <i>Journal of Applied Physics</i>, 2019.","chicago":"Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter, and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” <i>Journal of Applied Physics</i>, 2019. <a href=\"https://doi.org/10.1063/1.5066095\">https://doi.org/10.1063/1.5066095</a>.","ama":"Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. <i>Journal of Applied Physics</i>. 2019. doi:<a href=\"https://doi.org/10.1063/1.5066095\">10.1063/1.5066095</a>"},"year":"2019","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"doi":"10.1063/1.5066095","title":"Germanium doping of cubic GaN grown by molecular beam epitaxy","date_created":"2019-03-26T12:48:57Z","author":[{"first_name":"M.","full_name":"Deppe, M.","last_name":"Deppe"},{"first_name":"J. W.","last_name":"Gerlach","full_name":"Gerlach, J. W."},{"last_name":"Shvarkov","full_name":"Shvarkov, S.","first_name":"S."},{"full_name":"Rogalla, D.","last_name":"Rogalla","first_name":"D."},{"first_name":"H.-W.","last_name":"Becker","full_name":"Becker, H.-W."},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"last_name":"As","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","id":"14","first_name":"Donat Josef"}],"date_updated":"2022-01-06T07:03:58Z"},{"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","citation":{"ieee":"J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation density dependence of spin dynamics in bulk cubic GaN,” <i>Journal of Applied Physics</i>, 2019.","chicago":"Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” <i>Journal of Applied Physics</i>, 2019. <a href=\"https://doi.org/10.1063/1.5123914\">https://doi.org/10.1063/1.5123914</a>.","ama":"Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence of spin dynamics in bulk cubic GaN. <i>Journal of Applied Physics</i>. 2019. doi:<a href=\"https://doi.org/10.1063/1.5123914\">10.1063/1.5123914</a>","bibtex":"@article{Buß_Schupp_As_Hägele_Rudolph_2019, title={Optical excitation density dependence of spin dynamics in bulk cubic GaN}, DOI={<a href=\"https://doi.org/10.1063/1.5123914\">10.1063/1.5123914</a>}, number={153901}, journal={Journal of Applied Physics}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2019} }","mla":"Buß, J. H., et al. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” <i>Journal of Applied Physics</i>, 153901, 2019, doi:<a href=\"https://doi.org/10.1063/1.5123914\">10.1063/1.5123914</a>.","short":"J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019).","apa":"Buß, J. H., Schupp, T., As, D. J., Hägele, D., &#38; Rudolph, J. (2019). Optical excitation density dependence of spin dynamics in bulk cubic GaN. <i>Journal of Applied Physics</i>. <a href=\"https://doi.org/10.1063/1.5123914\">https://doi.org/10.1063/1.5123914</a>"},"year":"2019","author":[{"full_name":"Buß, J. H.","last_name":"Buß","first_name":"J. H."},{"full_name":"Schupp, T.","last_name":"Schupp","first_name":"T."},{"first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat Josef"},{"first_name":"D.","last_name":"Hägele","full_name":"Hägele, D."},{"full_name":"Rudolph, J.","last_name":"Rudolph","first_name":"J."}],"date_created":"2019-10-22T12:26:02Z","date_updated":"2022-01-06T06:51:48Z","doi":"10.1063/1.5123914","title":"Optical excitation density dependence of spin dynamics in bulk cubic GaN","publication":"Journal of Applied Physics","type":"journal_article","status":"public","department":[{"_id":"230"},{"_id":"429"}],"user_id":"14","_id":"13965","language":[{"iso":"eng"}],"article_number":"153901"},{"citation":{"mla":"Baron, Elias, et al. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm−3.” <i>Physical Review Materials</i>, 2019, doi:<a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">10.1103/physrevmaterials.3.104603</a>.","short":"E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).","bibtex":"@article{Baron_Goldhahn_Deppe_As_Feneberg_2019, title={Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3}, DOI={<a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">10.1103/physrevmaterials.3.104603</a>}, journal={Physical Review Materials}, author={Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2019} }","apa":"Baron, E., Goldhahn, R., Deppe, M., As, D. J., &#38; Feneberg, M. (2019). Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. <i>Physical Review Materials</i>. <a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">https://doi.org/10.1103/physrevmaterials.3.104603</a>","ieee":"E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” <i>Physical Review Materials</i>, 2019.","chicago":"Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm−3.” <i>Physical Review Materials</i>, 2019. <a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">https://doi.org/10.1103/physrevmaterials.3.104603</a>.","ama":"Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. <i>Physical Review Materials</i>. 2019. doi:<a href=\"https://doi.org/10.1103/physrevmaterials.3.104603\">10.1103/physrevmaterials.3.104603</a>"},"year":"2019","publication_identifier":{"issn":["2475-9953"]},"publication_status":"published","doi":"10.1103/physrevmaterials.3.104603","title":"Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3","date_created":"2019-10-22T12:27:30Z","author":[{"last_name":"Baron","full_name":"Baron, Elias","first_name":"Elias"},{"first_name":"Rüdiger","last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger"},{"last_name":"Deppe","full_name":"Deppe, Michael","first_name":"Michael"},{"last_name":"As","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","id":"14","first_name":"Donat Josef"},{"first_name":"Martin","full_name":"Feneberg, Martin","last_name":"Feneberg"}],"date_updated":"2022-01-06T06:51:48Z","status":"public","publication":"Physical Review Materials","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"230"},{"_id":"429"}],"user_id":"14","_id":"13966"},{"date_updated":"2023-10-09T09:03:47Z","oa":"1","author":[{"first_name":"Michael","last_name":"Deppe","full_name":"Deppe, Michael"},{"last_name":"Henksmeier","full_name":"Henksmeier, Tobias","first_name":"Tobias"},{"first_name":"Jürgen W.","full_name":"Gerlach, Jürgen W.","last_name":"Gerlach"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat J.","first_name":"Donat J."}],"date_created":"2020-01-07T10:09:27Z","title":"Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N","main_file_link":[{"open_access":"1"}],"doi":"10.1002/pssb.201900532","publication_status":"published","publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2019","citation":{"apa":"Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &#38; As, D. J. (2019). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>Physica Status Solidi (b)</i>, Article 1900532. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>","mla":"Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (b)</i>, 1900532, 2019, doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>.","short":"M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).","bibtex":"@article{Deppe_Henksmeier_Gerlach_Reuter_As_2019, title={Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N}, DOI={<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>}, number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat J.}, year={2019} }","ama":"Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>physica status solidi (b)</i>. Published online 2019. doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>","ieee":"M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” <i>physica status solidi (b)</i>, Art. no. 1900532, 2019, doi: <a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>.","chicago":"Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat J. As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (b)</i>, 2019. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>."},"_id":"15444","user_id":"14931","department":[{"_id":"15"},{"_id":"230"}],"article_number":"1900532","language":[{"iso":"eng"}],"type":"journal_article","publication":"physica status solidi (b)","status":"public"},{"publication":"Journal of Luminescence","type":"journal_article","status":"public","user_id":"14","_id":"4809","publication_identifier":{"issn":["0022-2313"]},"publication_status":"published","page":"309-313","intvolume":"       198","citation":{"ama":"Herval LKS, de Godoy MPF, Wecker T, As DJ. Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. <i>Journal of Luminescence</i>. 2018;198:309-313. doi:<a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">10.1016/j.jlumin.2018.02.051</a>","chicago":"Herval, Leonilson K.S., Marcio P.F. de Godoy, Tobias Wecker, and Donat Josef As. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” <i>Journal of Luminescence</i> 198 (2018): 309–13. <a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">https://doi.org/10.1016/j.jlumin.2018.02.051</a>.","ieee":"L. K. S. Herval, M. P. F. de Godoy, T. Wecker, and D. J. As, “Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures,” <i>Journal of Luminescence</i>, vol. 198, pp. 309–313, 2018.","apa":"Herval, L. K. S., de Godoy, M. P. F., Wecker, T., &#38; As, D. J. (2018). Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. <i>Journal of Luminescence</i>, <i>198</i>, 309–313. <a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">https://doi.org/10.1016/j.jlumin.2018.02.051</a>","short":"L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence 198 (2018) 309–313.","bibtex":"@article{Herval_de Godoy_Wecker_As_2018, title={Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures}, volume={198}, DOI={<a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">10.1016/j.jlumin.2018.02.051</a>}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herval, Leonilson K.S. and de Godoy, Marcio P.F. and Wecker, Tobias and As, Donat Josef}, year={2018}, pages={309–313} }","mla":"Herval, Leonilson K. S., et al. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” <i>Journal of Luminescence</i>, vol. 198, Elsevier BV, 2018, pp. 309–13, doi:<a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">10.1016/j.jlumin.2018.02.051</a>."},"year":"2018","volume":198,"author":[{"full_name":"Herval, Leonilson K.S.","last_name":"Herval","first_name":"Leonilson K.S."},{"first_name":"Marcio P.F.","last_name":"de Godoy","full_name":"de Godoy, Marcio P.F."},{"first_name":"Tobias","last_name":"Wecker","full_name":"Wecker, Tobias"},{"orcid":"0000-0003-1121-3565","last_name":"As","full_name":"As, Donat Josef","id":"14","first_name":"Donat Josef"}],"date_created":"2018-10-24T08:00:01Z","date_updated":"2022-01-06T07:01:24Z","publisher":"Elsevier BV","doi":"10.1016/j.jlumin.2018.02.051","title":"Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures"},{"article_number":"1700457","language":[{"iso":"eng"}],"_id":"7022","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"physica status solidi (b)","type":"journal_article","title":"Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy","doi":"10.1002/pssb.201700457","publisher":"Wiley","date_updated":"2022-01-06T07:03:26Z","volume":255,"date_created":"2019-01-28T09:40:01Z","author":[{"first_name":"Sarah","last_name":"Blumenthal","full_name":"Blumenthal, Sarah"},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"id":"14","full_name":"As, Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","first_name":"Donat Josef"}],"year":"2018","intvolume":"       255","citation":{"apa":"Blumenthal, S., Reuter, D., &#38; As, D. J. (2018). Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. <i>Physica Status Solidi (B)</i>, <i>255</i>(5). <a href=\"https://doi.org/10.1002/pssb.201700457\">https://doi.org/10.1002/pssb.201700457</a>","bibtex":"@article{Blumenthal_Reuter_As_2018, title={Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={<a href=\"https://doi.org/10.1002/pssb.201700457\">10.1002/pssb.201700457</a>}, number={51700457}, journal={physica status solidi (b)}, publisher={Wiley}, author={Blumenthal, Sarah and Reuter, Dirk and As, Donat Josef}, year={2018} }","short":"S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).","mla":"Blumenthal, Sarah, et al. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” <i>Physica Status Solidi (B)</i>, vol. 255, no. 5, 1700457, Wiley, 2018, doi:<a href=\"https://doi.org/10.1002/pssb.201700457\">10.1002/pssb.201700457</a>.","ieee":"S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” <i>physica status solidi (b)</i>, vol. 255, no. 5, 2018.","chicago":"Blumenthal, Sarah, Dirk Reuter, and Donat Josef As. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” <i>Physica Status Solidi (B)</i> 255, no. 5 (2018). <a href=\"https://doi.org/10.1002/pssb.201700457\">https://doi.org/10.1002/pssb.201700457</a>.","ama":"Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. <i>physica status solidi (b)</i>. 2018;255(5). doi:<a href=\"https://doi.org/10.1002/pssb.201700457\">10.1002/pssb.201700457</a>"},"publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","issue":"5"},{"title":"Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications","doi":"10.1016/b978-0-12-812136-8.00006-2","date_updated":"2022-01-06T07:00:58Z","publisher":"Elsevier","date_created":"2018-09-04T13:11:48Z","author":[{"orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat Josef","first_name":"Donat Josef"},{"first_name":"Klaus","last_name":"Lischka","full_name":"Lischka, Klaus"}],"year":"2018","citation":{"apa":"As, D. J., &#38; Lischka, K. (2018). Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications. In <i>Molecular Beam Epitaxy</i> (pp. 95–114). Elsevier. <a href=\"https://doi.org/10.1016/b978-0-12-812136-8.00006-2\">https://doi.org/10.1016/b978-0-12-812136-8.00006-2</a>","short":"D.J. As, K. Lischka, in: Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.","bibtex":"@inbook{As_Lischka_2018, title={Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications}, DOI={<a href=\"https://doi.org/10.1016/b978-0-12-812136-8.00006-2\">10.1016/b978-0-12-812136-8.00006-2</a>}, booktitle={Molecular Beam Epitaxy}, publisher={Elsevier}, author={As, Donat Josef and Lischka, Klaus}, year={2018}, pages={95–114} }","mla":"As, Donat Josef, and Klaus Lischka. “Nonpolar Cubic III-Nitrides: From the Basics of Growth to Device Applications.” <i>Molecular Beam Epitaxy</i>, Elsevier, 2018, pp. 95–114, doi:<a href=\"https://doi.org/10.1016/b978-0-12-812136-8.00006-2\">10.1016/b978-0-12-812136-8.00006-2</a>.","ama":"As DJ, Lischka K. Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications. In: <i>Molecular Beam Epitaxy</i>. Elsevier; 2018:95-114. doi:<a href=\"https://doi.org/10.1016/b978-0-12-812136-8.00006-2\">10.1016/b978-0-12-812136-8.00006-2</a>","chicago":"As, Donat Josef, and Klaus Lischka. “Nonpolar Cubic III-Nitrides: From the Basics of Growth to Device Applications.” In <i>Molecular Beam Epitaxy</i>, 95–114. Elsevier, 2018. <a href=\"https://doi.org/10.1016/b978-0-12-812136-8.00006-2\">https://doi.org/10.1016/b978-0-12-812136-8.00006-2</a>.","ieee":"D. J. As and K. Lischka, “Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications,” in <i>Molecular Beam Epitaxy</i>, Elsevier, 2018, pp. 95–114."},"page":"95-114","publication_status":"published","publication_identifier":{"isbn":["9780128121368"]},"_id":"4350","user_id":"14","status":"public","type":"book_chapter","publication":"Molecular Beam Epitaxy"},{"doi":"https://doi.org/10.1002/pssb.201600729","title":"Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy","author":[{"first_name":"Sarah","last_name":"Blumenthal","full_name":"Blumenthal, Sarah"},{"first_name":"Torsten","last_name":"Rieger","full_name":"Rieger, Torsten"},{"full_name":"Meertens, Doris","last_name":"Meertens","first_name":"Doris"},{"last_name":"Pawlis","full_name":"Pawlis, Alexander","first_name":"Alexander"},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"first_name":"Donat Josef","full_name":"As, Donat Josef","id":"14","last_name":"As","orcid":"0000-0003-1121-3565"}],"date_created":"2020-12-02T09:38:00Z","volume":255,"date_updated":"2023-10-09T09:19:40Z","citation":{"ama":"Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. <i>physica status solidi (b)</i>. 2018;255(3):1600729. doi:<a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>","chicago":"Blumenthal, Sarah, Torsten Rieger, Doris Meertens, Alexander Pawlis, Dirk Reuter, and Donat Josef As. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i> 255, no. 3 (2018): 1600729. <a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>.","ieee":"S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As, “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” <i>physica status solidi (b)</i>, vol. 255, no. 3, p. 1600729, 2018, doi: <a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>.","apa":"Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., &#38; As, D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. <i>Physica Status Solidi (b)</i>, <i>255</i>(3), 1600729. <a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>","short":"S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.","bibtex":"@article{Blumenthal_Rieger_Meertens_Pawlis_Reuter_As_2018, title={Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={<a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>}, number={3}, journal={physica status solidi (b)}, author={Blumenthal, Sarah and Rieger, Torsten and Meertens, Doris and Pawlis, Alexander and Reuter, Dirk and As, Donat Josef}, year={2018}, pages={1600729} }","mla":"Blumenthal, Sarah, et al. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i>, vol. 255, no. 3, 2018, p. 1600729, doi:<a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>."},"intvolume":"       255","page":"1600729","year":"2018","issue":"3","publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"language":[{"iso":"eng"}],"article_type":"original","keyword":["cubic crystals","GaN","molecular beam epitaxy","quantum dots"],"user_id":"14931","department":[{"_id":"230"},{"_id":"429"}],"project":[{"_id":"53","name":"TRR 142","grant_number":"231447078"},{"name":"TRR 142 - Project Area A","_id":"54"},{"grant_number":"231447078","_id":"63","name":"TRR 142 - Subproject A6"}],"_id":"20588","status":"public","abstract":[{"lang":"eng","text":"We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs."}],"type":"journal_article","publication":"physica status solidi (b)"},{"type":"journal_article","publication":"physica status solidi (b)","status":"public","_id":"4808","user_id":"14","article_number":"1700373","publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"issue":"5","year":"2017","citation":{"short":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).","mla":"Wecker, Tobias, et al. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” <i>Physica Status Solidi (B)</i>, vol. 255, no. 5, 1700373, Wiley, 2017, doi:<a href=\"https://doi.org/10.1002/pssb.201700373\">10.1002/pssb.201700373</a>.","bibtex":"@article{Wecker_Callsen_Hoffmann_Reuter_As_2017, title={Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells}, volume={255}, DOI={<a href=\"https://doi.org/10.1002/pssb.201700373\">10.1002/pssb.201700373</a>}, number={51700373}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}, year={2017} }","apa":"Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., &#38; As, D. J. (2017). Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. <i>Physica Status Solidi (B)</i>, <i>255</i>(5). <a href=\"https://doi.org/10.1002/pssb.201700373\">https://doi.org/10.1002/pssb.201700373</a>","chicago":"Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef As. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” <i>Physica Status Solidi (B)</i> 255, no. 5 (2017). <a href=\"https://doi.org/10.1002/pssb.201700373\">https://doi.org/10.1002/pssb.201700373</a>.","ieee":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells,” <i>physica status solidi (b)</i>, vol. 255, no. 5, 2017.","ama":"Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. <i>physica status solidi (b)</i>. 2017;255(5). doi:<a href=\"https://doi.org/10.1002/pssb.201700373\">10.1002/pssb.201700373</a>"},"intvolume":"       255","date_updated":"2022-01-06T07:01:24Z","publisher":"Wiley","date_created":"2018-10-24T07:59:23Z","author":[{"last_name":"Wecker","full_name":"Wecker, Tobias","first_name":"Tobias"},{"full_name":"Callsen, Gordon","last_name":"Callsen","first_name":"Gordon"},{"first_name":"Axel","last_name":"Hoffmann","full_name":"Hoffmann, Axel"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"first_name":"Donat Josef","id":"14","full_name":"As, Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565"}],"volume":255,"title":"Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells","doi":"10.1002/pssb.201700373"}]