---
_id: '4810'
author:
- first_name: T.
full_name: Wecker, T.
last_name: Wecker
- first_name: T.
full_name: Jostmeier, T.
last_name: Jostmeier
- first_name: T.
full_name: Rieger, T.
last_name: Rieger
- first_name: E.
full_name: Neumann, E.
last_name: Neumann
- first_name: A.
full_name: Pawlis, A.
last_name: Pawlis
- first_name: M.
full_name: Betz, M.
last_name: Betz
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Wecker T, Jostmeier T, Rieger T, et al. Linear and nonlinear behaviour of near-IR
intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal
of Crystal Growth. 2017;477:149-153. doi:10.1016/j.jcrysgro.2017.01.022
apa: Wecker, T., Jostmeier, T., Rieger, T., Neumann, E., Pawlis, A., Betz, M., …
As, D. J. (2017). Linear and nonlinear behaviour of near-IR intersubband transitions
of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth,
477, 149–153. https://doi.org/10.1016/j.jcrysgro.2017.01.022
bibtex: '@article{Wecker_Jostmeier_Rieger_Neumann_Pawlis_Betz_Reuter_As_2017, title={Linear
and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi
quantum well structures}, volume={477}, DOI={10.1016/j.jcrysgro.2017.01.022},
journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Wecker,
T. and Jostmeier, T. and Rieger, T. and Neumann, E. and Pawlis, A. and Betz, M.
and Reuter, Dirk and As, Donat Josef}, year={2017}, pages={149–153} }'
chicago: 'Wecker, T., T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, Dirk
Reuter, and Donat Josef As. “Linear and Nonlinear Behaviour of Near-IR Intersubband
Transitions of Cubic GaN/AlN Multi Quantum Well Structures.” Journal of Crystal
Growth 477 (2017): 149–53. https://doi.org/10.1016/j.jcrysgro.2017.01.022.'
ieee: T. Wecker et al., “Linear and nonlinear behaviour of near-IR intersubband
transitions of cubic GaN/AlN multi quantum well structures,” Journal of Crystal
Growth, vol. 477, pp. 149–153, 2017.
mla: Wecker, T., et al. “Linear and Nonlinear Behaviour of Near-IR Intersubband
Transitions of Cubic GaN/AlN Multi Quantum Well Structures.” Journal of Crystal
Growth, vol. 477, Elsevier BV, 2017, pp. 149–53, doi:10.1016/j.jcrysgro.2017.01.022.
short: T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter,
D.J. As, Journal of Crystal Growth 477 (2017) 149–153.
date_created: 2018-10-24T08:02:12Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1016/j.jcrysgro.2017.01.022
intvolume: ' 477'
page: 149-153
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Linear and nonlinear behaviour of near-IR intersubband transitions of cubic
GaN/AlN multi quantum well structures
type: journal_article
user_id: '14'
volume: 477
year: '2017'
...
---
_id: '4811'
article_number: '1600700'
author:
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Jürgen W.
full_name: Gerlach, Jürgen W.
last_name: Gerlach
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Deppe M, Gerlach JW, Reuter D, As DJ. Incorporation of germanium for n-type
doping of cubic GaN. physica status solidi (b). 2017;254(8). doi:10.1002/pssb.201600700
apa: Deppe, M., Gerlach, J. W., Reuter, D., & As, D. J. (2017). Incorporation
of germanium for n-type doping of cubic GaN. Physica Status Solidi (B),
254(8). https://doi.org/10.1002/pssb.201600700
bibtex: '@article{Deppe_Gerlach_Reuter_As_2017, title={Incorporation of germanium
for n-type doping of cubic GaN}, volume={254}, DOI={10.1002/pssb.201600700},
number={81600700}, journal={physica status solidi (b)}, publisher={Wiley}, author={Deppe,
Michael and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}, year={2017}
}'
chicago: Deppe, Michael, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Incorporation
of Germanium for N-Type Doping of Cubic GaN.” Physica Status Solidi (B)
254, no. 8 (2017). https://doi.org/10.1002/pssb.201600700.
ieee: M. Deppe, J. W. Gerlach, D. Reuter, and D. J. As, “Incorporation of germanium
for n-type doping of cubic GaN,” physica status solidi (b), vol. 254, no.
8, 2017.
mla: Deppe, Michael, et al. “Incorporation of Germanium for N-Type Doping of Cubic
GaN.” Physica Status Solidi (B), vol. 254, no. 8, 1600700, Wiley, 2017,
doi:10.1002/pssb.201600700.
short: M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254
(2017).
date_created: 2018-10-24T08:02:51Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1002/pssb.201600700
intvolume: ' 254'
issue: '8'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Incorporation of germanium for n-type doping of cubic GaN
type: journal_article
user_id: '14'
volume: 254
year: '2017'
...
---
_id: '4812'
author:
- first_name: T.
full_name: Czerniuk, T.
last_name: Czerniuk
- first_name: T.
full_name: Ehrlich, T.
last_name: Ehrlich
- first_name: T.
full_name: Wecker, T.
last_name: Wecker
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: A. V.
full_name: Akimov, A. V.
last_name: Akimov
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Czerniuk T, Ehrlich T, Wecker T, et al. Picosecond Acoustics in Single Quantum
Wells of Cubic GaN/(Al,Ga)N. Physical Review Applied. 2017;7(1). doi:10.1103/physrevapplied.7.014006
apa: Czerniuk, T., Ehrlich, T., Wecker, T., As, D. J., Yakovlev, D. R., Akimov,
A. V., & Bayer, M. (2017). Picosecond Acoustics in Single Quantum Wells of
Cubic GaN/(Al,Ga)N. Physical Review Applied, 7(1). https://doi.org/10.1103/physrevapplied.7.014006
bibtex: '@article{Czerniuk_Ehrlich_Wecker_As_Yakovlev_Akimov_Bayer_2017, title={Picosecond
Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N}, volume={7}, DOI={10.1103/physrevapplied.7.014006},
number={1}, journal={Physical Review Applied}, publisher={American Physical Society
(APS)}, author={Czerniuk, T. and Ehrlich, T. and Wecker, T. and As, Donat Josef
and Yakovlev, D. R. and Akimov, A. V. and Bayer, M.}, year={2017} }'
chicago: Czerniuk, T., T. Ehrlich, T. Wecker, Donat Josef As, D. R. Yakovlev, A. V.
Akimov, and M. Bayer. “Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N.”
Physical Review Applied 7, no. 1 (2017). https://doi.org/10.1103/physrevapplied.7.014006.
ieee: T. Czerniuk et al., “Picosecond Acoustics in Single Quantum Wells of
Cubic GaN/(Al,Ga)N,” Physical Review Applied, vol. 7, no. 1, 2017.
mla: Czerniuk, T., et al. “Picosecond Acoustics in Single Quantum Wells of Cubic
GaN/(Al,Ga)N.” Physical Review Applied, vol. 7, no. 1, American Physical
Society (APS), 2017, doi:10.1103/physrevapplied.7.014006.
short: T. Czerniuk, T. Ehrlich, T. Wecker, D.J. As, D.R. Yakovlev, A.V. Akimov,
M. Bayer, Physical Review Applied 7 (2017).
date_created: 2018-10-24T08:03:30Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1103/physrevapplied.7.014006
intvolume: ' 7'
issue: '1'
publication: Physical Review Applied
publication_identifier:
issn:
- 2331-7019
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N
type: journal_article
user_id: '14'
volume: 7
year: '2017'
...
---
_id: '4813'
author:
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Jürgen
full_name: Gerlach, Jürgen
last_name: Gerlach
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: As DJ, Deppe M, Gerlach J, Reuter D. Optical Properties of Germanium Doped
Cubic GaN. MRS Advances. 2017;2(05):283-288. doi:10.1557/adv.2016.637
apa: As, D. J., Deppe, M., Gerlach, J., & Reuter, D. (2017). Optical Properties
of Germanium Doped Cubic GaN. MRS Advances, 2(05), 283–288. https://doi.org/10.1557/adv.2016.637
bibtex: '@article{As_Deppe_Gerlach_Reuter_2017, title={Optical Properties of Germanium
Doped Cubic GaN}, volume={2}, DOI={10.1557/adv.2016.637},
number={05}, journal={MRS Advances}, publisher={Cambridge University Press (CUP)},
author={As, Donat Josef and Deppe, Michael and Gerlach, Jürgen and Reuter, Dirk},
year={2017}, pages={283–288} }'
chicago: 'As, Donat Josef, Michael Deppe, Jürgen Gerlach, and Dirk Reuter. “Optical
Properties of Germanium Doped Cubic GaN.” MRS Advances 2, no. 05 (2017):
283–88. https://doi.org/10.1557/adv.2016.637.'
ieee: D. J. As, M. Deppe, J. Gerlach, and D. Reuter, “Optical Properties of Germanium
Doped Cubic GaN,” MRS Advances, vol. 2, no. 05, pp. 283–288, 2017.
mla: As, Donat Josef, et al. “Optical Properties of Germanium Doped Cubic GaN.”
MRS Advances, vol. 2, no. 05, Cambridge University Press (CUP), 2017, pp.
283–88, doi:10.1557/adv.2016.637.
short: D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances 2 (2017) 283–288.
date_created: 2018-10-24T08:04:37Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1557/adv.2016.637
intvolume: ' 2'
issue: '05'
language:
- iso: eng
page: 283-288
publication: MRS Advances
publication_identifier:
issn:
- 2059-8521
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Optical Properties of Germanium Doped Cubic GaN
type: journal_article
user_id: '42514'
volume: 2
year: '2017'
...
---
_id: '4814'
author:
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: O.
full_name: Brandt, O.
last_name: Brandt
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
citation:
ama: Buß JH, Schupp T, As DJ, Brandt O, Hägele D, Rudolph J. Electron spin dynamics
in cubic GaN. Physical Review B. 2016;94(23). doi:10.1103/physrevb.94.235202
apa: Buß, J. H., Schupp, T., As, D. J., Brandt, O., Hägele, D., & Rudolph, J.
(2016). Electron spin dynamics in cubic GaN. Physical Review B, 94(23).
https://doi.org/10.1103/physrevb.94.235202
bibtex: '@article{Buß_Schupp_As_Brandt_Hägele_Rudolph_2016, title={Electron spin
dynamics in cubic GaN}, volume={94}, DOI={10.1103/physrevb.94.235202},
number={23}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Brandt, O. and
Hägele, D. and Rudolph, J.}, year={2016} }'
chicago: Buß, J. H., T. Schupp, Donat Josef As, O. Brandt, D. Hägele, and J. Rudolph.
“Electron Spin Dynamics in Cubic GaN.” Physical Review B 94, no. 23 (2016).
https://doi.org/10.1103/physrevb.94.235202.
ieee: J. H. Buß, T. Schupp, D. J. As, O. Brandt, D. Hägele, and J. Rudolph, “Electron
spin dynamics in cubic GaN,” Physical Review B, vol. 94, no. 23, 2016.
mla: Buß, J. H., et al. “Electron Spin Dynamics in Cubic GaN.” Physical Review
B, vol. 94, no. 23, American Physical Society (APS), 2016, doi:10.1103/physrevb.94.235202.
short: J.H. Buß, T. Schupp, D.J. As, O. Brandt, D. Hägele, J. Rudolph, Physical
Review B 94 (2016).
date_created: 2018-10-24T08:05:15Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1103/physrevb.94.235202
intvolume: ' 94'
issue: '23'
publication: Physical Review B
publication_identifier:
issn:
- 2469-9950
- 2469-9969
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Electron spin dynamics in cubic GaN
type: journal_article
user_id: '14'
volume: 94
year: '2016'
...
---
_id: '4815'
article_number: '103901'
author:
- first_name: V. A. N.
full_name: Righetti, V. A. N.
last_name: Righetti
- first_name: X.
full_name: Gratens, X.
last_name: Gratens
- first_name: V. A.
full_name: Chitta, V. A.
last_name: Chitta
- first_name: M. P. F.
full_name: de Godoy, M. P. F.
last_name: de Godoy
- first_name: A. D.
full_name: Rodrigues, A. D.
last_name: Rodrigues
- first_name: E.
full_name: Abramof, E.
last_name: Abramof
- first_name: J. F.
full_name: Dias, J. F.
last_name: Dias
- first_name: D.
full_name: Schikora, D.
last_name: Schikora
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
citation:
ama: Righetti VAN, Gratens X, Chitta VA, et al. Magnetic and structural properties
of Fe-implanted cubic GaN. Journal of Applied Physics. 2016;120(10). doi:10.1063/1.4962275
apa: Righetti, V. A. N., Gratens, X., Chitta, V. A., de Godoy, M. P. F., Rodrigues,
A. D., Abramof, E., … Lischka, K. (2016). Magnetic and structural properties of
Fe-implanted cubic GaN. Journal of Applied Physics, 120(10). https://doi.org/10.1063/1.4962275
bibtex: '@article{Righetti_Gratens_Chitta_de Godoy_Rodrigues_Abramof_Dias_Schikora_As_Lischka_2016,
title={Magnetic and structural properties of Fe-implanted cubic GaN}, volume={120},
DOI={10.1063/1.4962275}, number={10103901},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Righetti,
V. A. N. and Gratens, X. and Chitta, V. A. and de Godoy, M. P. F. and Rodrigues,
A. D. and Abramof, E. and Dias, J. F. and Schikora, D. and As, Donat Josef and
Lischka, K.}, year={2016} }'
chicago: Righetti, V. A. N., X. Gratens, V. A. Chitta, M. P. F. de Godoy, A. D.
Rodrigues, E. Abramof, J. F. Dias, D. Schikora, Donat Josef As, and K. Lischka.
“Magnetic and Structural Properties of Fe-Implanted Cubic GaN.” Journal of
Applied Physics 120, no. 10 (2016). https://doi.org/10.1063/1.4962275.
ieee: V. A. N. Righetti et al., “Magnetic and structural properties of Fe-implanted
cubic GaN,” Journal of Applied Physics, vol. 120, no. 10, 2016.
mla: Righetti, V. A. N., et al. “Magnetic and Structural Properties of Fe-Implanted
Cubic GaN.” Journal of Applied Physics, vol. 120, no. 10, 103901, AIP Publishing,
2016, doi:10.1063/1.4962275.
short: V.A.N. Righetti, X. Gratens, V.A. Chitta, M.P.F. de Godoy, A.D. Rodrigues,
E. Abramof, J.F. Dias, D. Schikora, D.J. As, K. Lischka, Journal of Applied Physics
120 (2016).
date_created: 2018-10-24T08:05:48Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1063/1.4962275
intvolume: ' 120'
issue: '10'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Magnetic and structural properties of Fe-implanted cubic GaN
type: journal_article
user_id: '14'
volume: 120
year: '2016'
...
---
_id: '4817'
author:
- first_name: Charlotte
full_name: Rothfuchs, Charlotte
last_name: Rothfuchs
- first_name: Nadezhda
full_name: Kukharchyk, Nadezhda
last_name: Kukharchyk
- first_name: Tristan
full_name: Koppe, Tristan
last_name: Koppe
- first_name: Fabrice
full_name: Semond, Fabrice
last_name: Semond
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Hans-Werner
full_name: Becker, Hans-Werner
last_name: Becker
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Hans C.
full_name: Hofsäss, Hans C.
last_name: Hofsäss
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
citation:
ama: 'Rothfuchs C, Kukharchyk N, Koppe T, et al. Photoluminescence of gallium ion
irradiated hexagonal and cubic GaN quantum dots. Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms.
2016;383:1-5. doi:10.1016/j.nimb.2016.06.004'
apa: 'Rothfuchs, C., Kukharchyk, N., Koppe, T., Semond, F., Blumenthal, S., Becker,
H.-W., … Ludwig, A. (2016). Photoluminescence of gallium ion irradiated hexagonal
and cubic GaN quantum dots. Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms, 383, 1–5. https://doi.org/10.1016/j.nimb.2016.06.004'
bibtex: '@article{Rothfuchs_Kukharchyk_Koppe_Semond_Blumenthal_Becker_As_Hofsäss_Wieck_Ludwig_2016,
title={Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum
dots}, volume={383}, DOI={10.1016/j.nimb.2016.06.004},
journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms}, publisher={Elsevier BV}, author={Rothfuchs, Charlotte
and Kukharchyk, Nadezhda and Koppe, Tristan and Semond, Fabrice and Blumenthal,
Sarah and Becker, Hans-Werner and As, Donat Josef and Hofsäss, Hans C. and Wieck,
Andreas D. and Ludwig, Arne}, year={2016}, pages={1–5} }'
chicago: 'Rothfuchs, Charlotte, Nadezhda Kukharchyk, Tristan Koppe, Fabrice Semond,
Sarah Blumenthal, Hans-Werner Becker, Donat Josef As, Hans C. Hofsäss, Andreas
D. Wieck, and Arne Ludwig. “Photoluminescence of Gallium Ion Irradiated Hexagonal
and Cubic GaN Quantum Dots.” Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms 383 (2016): 1–5. https://doi.org/10.1016/j.nimb.2016.06.004.'
ieee: 'C. Rothfuchs et al., “Photoluminescence of gallium ion irradiated
hexagonal and cubic GaN quantum dots,” Nuclear Instruments and Methods in Physics
Research Section B: Beam Interactions with Materials and Atoms, vol. 383,
pp. 1–5, 2016.'
mla: 'Rothfuchs, Charlotte, et al. “Photoluminescence of Gallium Ion Irradiated
Hexagonal and Cubic GaN Quantum Dots.” Nuclear Instruments and Methods in Physics
Research Section B: Beam Interactions with Materials and Atoms, vol. 383,
Elsevier BV, 2016, pp. 1–5, doi:10.1016/j.nimb.2016.06.004.'
short: 'C. Rothfuchs, N. Kukharchyk, T. Koppe, F. Semond, S. Blumenthal, H.-W. Becker,
D.J. As, H.C. Hofsäss, A.D. Wieck, A. Ludwig, Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms 383
(2016) 1–5.'
date_created: 2018-10-24T08:07:16Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1016/j.nimb.2016.06.004
intvolume: ' 383'
page: 1-5
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum
dots
type: journal_article
user_id: '14'
volume: 383
year: '2016'
...
---
_id: '7055'
article_number: 05FG01
author:
- first_name: Tobias
full_name: Wecker, Tobias
last_name: Wecker
- first_name: Gordon
full_name: Callsen, Gordon
last_name: Callsen
- first_name: Axel
full_name: Hoffmann, Axel
last_name: Hoffmann
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Photoluminescence excitation
spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double
quantum well grown by molecular beam epitaxy. Japanese Journal of Applied Physics.
2016;55(5S). doi:10.7567/jjap.55.05fg01
apa: Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., & As, D. J. (2016).
Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic
GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy. Japanese
Journal of Applied Physics, 55(5S). https://doi.org/10.7567/jjap.55.05fg01
bibtex: '@article{Wecker_Callsen_Hoffmann_Reuter_As_2016, title={Photoluminescence
excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N
double quantum well grown by molecular beam epitaxy}, volume={55}, DOI={10.7567/jjap.55.05fg01},
number={5S05FG01}, journal={Japanese Journal of Applied Physics}, publisher={Japan
Society of Applied Physics}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann,
Axel and Reuter, Dirk and As, Donat Josef}, year={2016} }'
chicago: Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef
As. “Photoluminescence Excitation Spectroscopy of Excited States of an Asymmetric
Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular Beam Epitaxy.”
Japanese Journal of Applied Physics 55, no. 5S (2016). https://doi.org/10.7567/jjap.55.05fg01.
ieee: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Photoluminescence
excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N
double quantum well grown by molecular beam epitaxy,” Japanese Journal of Applied
Physics, vol. 55, no. 5S, 2016.
mla: Wecker, Tobias, et al. “Photoluminescence Excitation Spectroscopy of Excited
States of an Asymmetric Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular
Beam Epitaxy.” Japanese Journal of Applied Physics, vol. 55, no. 5S, 05FG01,
Japan Society of Applied Physics, 2016, doi:10.7567/jjap.55.05fg01.
short: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Japanese Journal
of Applied Physics 55 (2016).
date_created: 2019-01-29T09:21:21Z
date_updated: 2022-01-06T07:03:27Z
department:
- _id: '15'
- _id: '230'
doi: 10.7567/jjap.55.05fg01
intvolume: ' 55'
issue: 5S
language:
- iso: eng
publication: Japanese Journal of Applied Physics
publication_identifier:
issn:
- 0021-4922
- 1347-4065
publication_status: published
publisher: Japan Society of Applied Physics
status: public
title: Photoluminescence excitation spectroscopy of excited states of an asymmetric
cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy
type: journal_article
user_id: '42514'
volume: 55
year: '2016'
...
---
_id: '3888'
abstract:
- lang: eng
text: 'We successfully developed a process to fabricate freestanding cubic aluminium
nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots
(QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE).
To realize the photonic crystal (PhC) membrane we have chosen a triangular array
of holes. The array was fabricated by electron beam lithography and several steps
of reactive ion etching (RIE) with the help of a hard mask and an undercut of
the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations
to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL)
measurements of the photonic crystals, in particular of a H1 and a L3 cavity,
and the emission of the QD ensemble were performed to characterize the samples.
The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000
for two different modes of the L3 cavity, respectively. The energy of the fundamental
modes is in good agreement to the numerical simulations. '
article_type: original
author:
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Matthias
full_name: Bürger, Matthias
last_name: Bürger
- first_name: Andre
full_name: Hildebrandt, Andre
last_name: Hildebrandt
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Blumenthal S, Bürger M, Hildebrandt A, et al. Fabrication and characterization
of two-dimensional cubic AlN photonic crystal membranes containing zincblende
GaN quantum dots. physica status solidi (c). 2016;13(5-6):292-296. doi:10.1002/pssc.201600010
apa: Blumenthal, S., Bürger, M., Hildebrandt, A., Förstner, J., Weber, N., Meier,
C., Reuter, D., & As, D. J. (2016). Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. Physica
Status Solidi (c), 13(5–6), 292–296. https://doi.org/10.1002/pssc.201600010
bibtex: '@article{Blumenthal_Bürger_Hildebrandt_Förstner_Weber_Meier_Reuter_As_2016,
title={Fabrication and characterization of two-dimensional cubic AlN photonic
crystal membranes containing zincblende GaN quantum dots}, volume={13}, DOI={10.1002/pssc.201600010}, number={5–6},
journal={physica status solidi (c)}, publisher={Wiley}, author={Blumenthal, Sarah
and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils
and Meier, Cedrik and Reuter, Dirk and As, Donat J.}, year={2016}, pages={292–296}
}'
chicago: 'Blumenthal, Sarah, Matthias Bürger, Andre Hildebrandt, Jens Förstner,
Nils Weber, Cedrik Meier, Dirk Reuter, and Donat J. As. “Fabrication and Characterization
of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende
GaN Quantum Dots.” Physica Status Solidi (c) 13, no. 5–6 (2016): 292–96.
https://doi.org/10.1002/pssc.201600010.'
ieee: 'S. Blumenthal et al., “Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,”
physica status solidi (c), vol. 13, no. 5–6, pp. 292–296, 2016, doi: 10.1002/pssc.201600010.'
mla: Blumenthal, Sarah, et al. “Fabrication and Characterization of Two-Dimensional
Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.”
Physica Status Solidi (c), vol. 13, no. 5–6, Wiley, 2016, pp. 292–96, doi:10.1002/pssc.201600010.
short: S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier,
D. Reuter, D.J. As, Physica Status Solidi (c) 13 (2016) 292–296.
date_created: 2018-08-13T09:14:58Z
date_updated: 2023-10-09T09:06:08Z
ddc:
- '530'
department:
- _id: '61'
- _id: '284'
- _id: '290'
- _id: '292'
- _id: '287'
- _id: '35'
- _id: '230'
doi: 10.1002/pssc.201600010
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-13T09:20:05Z
date_updated: 2018-08-13T09:20:05Z
file_id: '3889'
file_name: 2016-04 Blumenthal_et_al_Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots_physica_status_solidi_(c).pdf
file_size: 1119165
relation: main_file
success: 1
file_date_updated: 2018-08-13T09:20:05Z
has_accepted_license: '1'
intvolume: ' 13'
issue: 5-6
keyword:
- tet_topic_phc
- tet_topic_qd
language:
- iso: eng
page: 292-296
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Fabrication and characterization of two-dimensional cubic AlN photonic crystal
membranes containing zincblende GaN quantum dots
type: journal_article
user_id: '14931'
volume: 13
year: '2016'
...
---
_id: '4240'
abstract:
- lang: eng
text: Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction
(HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC
(001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The
layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis
reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for
growing layer thicknesses, which is caused by a partial compensation of defects.
The Raman characterization confirms well-formed c-GaN layers. A more detailed
examination of the longitudinal optical mode hints at a correlation of the FWHM
of the Raman mode with the dislocation density, which shows the possibility to
determine dislocation densities by Ramanspectroscopy on a micrometer scale, which
is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized
Raman spectra present an alternative way to determine layer thicknesses of thin
GaN films.
article_type: original
author:
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
- first_name: T.
full_name: Wecker, T.
last_name: Wecker
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and
HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. physica
status solidi (b). 2016;253(4):778-782. doi:10.1002/pssb.201552592
apa: Rüsing, M., Wecker, T., Berth, G., As, D. J., & Zrenner, A. (2016). Joint
Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown
on 3C-SiC. Physica Status Solidi (b), 253(4), 778–782. https://doi.org/10.1002/pssb.201552592
bibtex: '@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy
and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253},
DOI={10.1002/pssb.201552592},
number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing,
Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur},
year={2016}, pages={778–782} }'
chicago: 'Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner.
“Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers
Grown on 3C-SiC.” Physica Status Solidi (b) 253, no. 4 (2016): 778–82.
https://doi.org/10.1002/pssb.201552592.'
ieee: 'M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy
and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” physica
status solidi (b), vol. 253, no. 4, pp. 778–782, 2016, doi: 10.1002/pssb.201552592.'
mla: Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of
Cubic Gallium Nitride Layers Grown on 3C-SiC.” Physica Status Solidi (b),
vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:10.1002/pssb.201552592.
short: M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi
(b) 253 (2016) 778–782.
date_created: 2018-08-29T08:24:01Z
date_updated: 2023-10-09T08:48:35Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.201552592
intvolume: ' 253'
issue: '4'
keyword:
- cubic gallium nitride
- dislocation density
- HRXRD
- Raman spectroscopy
language:
- iso: eng
page: 778-782
project:
- _id: '53'
grant_number: '231447078'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '68'
grant_number: '231447078'
name: TRR 142 - Subproject B3
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers
grown on 3C-SiC
type: journal_article
user_id: '14931'
volume: 253
year: '2016'
...
---
_id: '4819'
article_number: '012002'
author:
- first_name: Sylvain
full_name: Sergent, Sylvain
last_name: Sergent
- first_name: Satoshi
full_name: Kako, Satoshi
last_name: Kako
- first_name: Matthias
full_name: Bürger, Matthias
last_name: Bürger
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Satoshi
full_name: Iwamoto, Satoshi
last_name: Iwamoto
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Yasuhiko
full_name: Arakawa, Yasuhiko
last_name: Arakawa
citation:
ama: Sergent S, Kako S, Bürger M, et al. Active zinc-blende III–nitride photonic
structures on silicon. Applied Physics Express. 2015;9(1). doi:10.7567/apex.9.012002
apa: Sergent, S., Kako, S., Bürger, M., Blumenthal, S., Iwamoto, S., As, D. J.,
& Arakawa, Y. (2015). Active zinc-blende III–nitride photonic structures on
silicon. Applied Physics Express, 9(1). https://doi.org/10.7567/apex.9.012002
bibtex: '@article{Sergent_Kako_Bürger_Blumenthal_Iwamoto_As_Arakawa_2015, title={Active
zinc-blende III–nitride photonic structures on silicon}, volume={9}, DOI={10.7567/apex.9.012002},
number={1012002}, journal={Applied Physics Express}, publisher={Japan Society
of Applied Physics}, author={Sergent, Sylvain and Kako, Satoshi and Bürger, Matthias
and Blumenthal, Sarah and Iwamoto, Satoshi and As, Donat Josef and Arakawa, Yasuhiko},
year={2015} }'
chicago: Sergent, Sylvain, Satoshi Kako, Matthias Bürger, Sarah Blumenthal, Satoshi
Iwamoto, Donat Josef As, and Yasuhiko Arakawa. “Active Zinc-Blende III–Nitride
Photonic Structures on Silicon.” Applied Physics Express 9, no. 1 (2015).
https://doi.org/10.7567/apex.9.012002.
ieee: S. Sergent et al., “Active zinc-blende III–nitride photonic structures
on silicon,” Applied Physics Express, vol. 9, no. 1, 2015.
mla: Sergent, Sylvain, et al. “Active Zinc-Blende III–Nitride Photonic Structures
on Silicon.” Applied Physics Express, vol. 9, no. 1, 012002, Japan Society
of Applied Physics, 2015, doi:10.7567/apex.9.012002.
short: S. Sergent, S. Kako, M. Bürger, S. Blumenthal, S. Iwamoto, D.J. As, Y. Arakawa,
Applied Physics Express 9 (2015).
date_created: 2018-10-24T08:17:54Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.7567/apex.9.012002
intvolume: ' 9'
issue: '1'
publication: Applied Physics Express
publication_identifier:
issn:
- 1882-0778
- 1882-0786
publication_status: published
publisher: Japan Society of Applied Physics
status: public
title: Active zinc-blende III–nitride photonic structures on silicon
type: journal_article
user_id: '14'
volume: 9
year: '2015'
...
---
_id: '4820'
article_number: '225701'
author:
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
citation:
ama: Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Temperature dependence of the
electron Landé g-factor in cubic GaN. Journal of Applied Physics. 2015;118(22).
doi:10.1063/1.4937128
apa: Buß, J. H., Schupp, T., As, D. J., Hägele, D., & Rudolph, J. (2015). Temperature
dependence of the electron Landé g-factor in cubic GaN. Journal of Applied
Physics, 118(22). https://doi.org/10.1063/1.4937128
bibtex: '@article{Buß_Schupp_As_Hägele_Rudolph_2015, title={Temperature dependence
of the electron Landé g-factor in cubic GaN}, volume={118}, DOI={10.1063/1.4937128},
number={22225701}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph,
J.}, year={2015} }'
chicago: Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Temperature
Dependence of the Electron Landé G-Factor in Cubic GaN.” Journal of Applied
Physics 118, no. 22 (2015). https://doi.org/10.1063/1.4937128.
ieee: J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Temperature dependence
of the electron Landé g-factor in cubic GaN,” Journal of Applied Physics,
vol. 118, no. 22, 2015.
mla: Buß, J. H., et al. “Temperature Dependence of the Electron Landé G-Factor in
Cubic GaN.” Journal of Applied Physics, vol. 118, no. 22, 225701, AIP Publishing,
2015, doi:10.1063/1.4937128.
short: J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics
118 (2015).
date_created: 2018-10-24T08:18:32Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1063/1.4937128
intvolume: ' 118'
issue: '22'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Temperature dependence of the electron Landé g-factor in cubic GaN
type: journal_article
user_id: '14'
volume: 118
year: '2015'
...
---
_id: '4825'
article_number: '093906'
author:
- first_name: A.
full_name: Schaefer, A.
last_name: Schaefer
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: A.
full_name: Zado, A.
last_name: Zado
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
citation:
ama: Schaefer A, Buß JH, Schupp T, et al. Strain dependent electron spin dynamics
in bulk cubic GaN. Journal of Applied Physics. 2015;117(9). doi:10.1063/1.4914069
apa: Schaefer, A., Buß, J. H., Schupp, T., Zado, A., As, D. J., Hägele, D., &
Rudolph, J. (2015). Strain dependent electron spin dynamics in bulk cubic GaN.
Journal of Applied Physics, 117(9). https://doi.org/10.1063/1.4914069
bibtex: '@article{Schaefer_Buß_Schupp_Zado_As_Hägele_Rudolph_2015, title={Strain
dependent electron spin dynamics in bulk cubic GaN}, volume={117}, DOI={10.1063/1.4914069},
number={9093906}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schaefer, A. and Buß, J. H. and Schupp, T. and Zado, A. and As, Donat
Josef and Hägele, D. and Rudolph, J.}, year={2015} }'
chicago: Schaefer, A., J. H. Buß, T. Schupp, A. Zado, Donat Josef As, D. Hägele,
and J. Rudolph. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” Journal
of Applied Physics 117, no. 9 (2015). https://doi.org/10.1063/1.4914069.
ieee: A. Schaefer et al., “Strain dependent electron spin dynamics in bulk
cubic GaN,” Journal of Applied Physics, vol. 117, no. 9, 2015.
mla: Schaefer, A., et al. “Strain Dependent Electron Spin Dynamics in Bulk Cubic
GaN.” Journal of Applied Physics, vol. 117, no. 9, 093906, AIP Publishing,
2015, doi:10.1063/1.4914069.
short: A. Schaefer, J.H. Buß, T. Schupp, A. Zado, D.J. As, D. Hägele, J. Rudolph,
Journal of Applied Physics 117 (2015).
date_created: 2018-10-24T09:02:29Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1063/1.4914069
intvolume: ' 117'
issue: '9'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Strain dependent electron spin dynamics in bulk cubic GaN
type: journal_article
user_id: '14'
volume: 117
year: '2015'
...
---
_id: '7217'
article_number: '211101'
author:
- first_name: Thorben
full_name: Jostmeier, Thorben
last_name: Jostmeier
- first_name: Tobias
full_name: Wecker, Tobias
last_name: Wecker
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Markus
full_name: Betz, Markus
last_name: Betz
citation:
ama: Jostmeier T, Wecker T, Reuter D, As DJ, Betz M. Ultrafast carrier dynamics
and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice. Applied
Physics Letters. 2015;107(21). doi:10.1063/1.4936330
apa: Jostmeier, T., Wecker, T., Reuter, D., As, D. J., & Betz, M. (2015). Ultrafast
carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice.
Applied Physics Letters, 107(21). https://doi.org/10.1063/1.4936330
bibtex: '@article{Jostmeier_Wecker_Reuter_As_Betz_2015, title={Ultrafast carrier
dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice},
volume={107}, DOI={10.1063/1.4936330},
number={21211101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Jostmeier, Thorben and Wecker, Tobias and Reuter, Dirk and As, Donat Josef
and Betz, Markus}, year={2015} }'
chicago: Jostmeier, Thorben, Tobias Wecker, Dirk Reuter, Donat Josef As, and Markus
Betz. “Ultrafast Carrier Dynamics and Resonant Inter-Miniband Nonlinearity of
a Cubic GaN/AlN Superlattice.” Applied Physics Letters 107, no. 21 (2015).
https://doi.org/10.1063/1.4936330.
ieee: T. Jostmeier, T. Wecker, D. Reuter, D. J. As, and M. Betz, “Ultrafast carrier
dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice,”
Applied Physics Letters, vol. 107, no. 21, 2015.
mla: Jostmeier, Thorben, et al. “Ultrafast Carrier Dynamics and Resonant Inter-Miniband
Nonlinearity of a Cubic GaN/AlN Superlattice.” Applied Physics Letters,
vol. 107, no. 21, 211101, AIP Publishing, 2015, doi:10.1063/1.4936330.
short: T. Jostmeier, T. Wecker, D. Reuter, D.J. As, M. Betz, Applied Physics Letters
107 (2015).
date_created: 2019-01-29T11:17:04Z
date_updated: 2022-01-06T07:03:29Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4936330
intvolume: ' 107'
issue: '21'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic
GaN/AlN superlattice
type: journal_article
user_id: '42514'
volume: 107
year: '2015'
...
---
_id: '4824'
author:
- first_name: T.
full_name: Wecker, T.
last_name: Wecker
- first_name: F.
full_name: Hörich, F.
last_name: Hörich
- first_name: M.
full_name: Feneberg, M.
last_name: Feneberg
- first_name: R.
full_name: Goldhahn, R.
last_name: Goldhahn
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Wecker T, Hörich F, Feneberg M, Goldhahn R, Reuter D, As DJ. Structural and
optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum
wells. physica status solidi (b). 2014;252(5):873-878. doi:10.1002/pssb.201451531
apa: Wecker, T., Hörich, F., Feneberg, M., Goldhahn, R., Reuter, D., & As, D.
J. (2014). Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN
double quantum wells. Physica Status Solidi (B), 252(5), 873–878.
https://doi.org/10.1002/pssb.201451531
bibtex: '@article{Wecker_Hörich_Feneberg_Goldhahn_Reuter_As_2014, title={Structural
and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum
wells}, volume={252}, DOI={10.1002/pssb.201451531},
number={5}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker,
T. and Hörich, F. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat
Josef}, year={2014}, pages={873–878} }'
chicago: 'Wecker, T., F. Hörich, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat
Josef As. “Structural and Optical Properties of MBE-Grown Asymmetric Cubic GaN/AlxGa1-XN
Double Quantum Wells.” Physica Status Solidi (B) 252, no. 5 (2014): 873–78.
https://doi.org/10.1002/pssb.201451531.'
ieee: T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D. J. As, “Structural
and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum
wells,” physica status solidi (b), vol. 252, no. 5, pp. 873–878, 2014.
mla: Wecker, T., et al. “Structural and Optical Properties of MBE-Grown Asymmetric
Cubic GaN/AlxGa1-XN Double Quantum Wells.” Physica Status Solidi (B), vol.
252, no. 5, Wiley, 2014, pp. 873–78, doi:10.1002/pssb.201451531.
short: T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, Physica
Status Solidi (B) 252 (2014) 873–878.
date_created: 2018-10-24T08:59:33Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1002/pssb.201451531
intvolume: ' 252'
issue: '5'
language:
- iso: eng
page: 873-878
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN
double quantum wells
type: journal_article
user_id: '42514'
volume: 252
year: '2014'
...
---
_id: '8762'
author:
- first_name: S.
full_name: Sergent, S.
last_name: Sergent
- first_name: S.
full_name: Kako, S.
last_name: Kako
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Y.
full_name: Arakawa, Y.
last_name: Arakawa
citation:
ama: Sergent S, Kako S, Bürger M, Schupp T, As DJ, Arakawa Y. Polarization properties
of single zinc-blende GaN/AlN quantum dots. Physical Review B. 2014. doi:10.1103/physrevb.90.235312
apa: Sergent, S., Kako, S., Bürger, M., Schupp, T., As, D. J., & Arakawa, Y.
(2014). Polarization properties of single zinc-blende GaN/AlN quantum dots. Physical
Review B. https://doi.org/10.1103/physrevb.90.235312
bibtex: '@article{Sergent_Kako_Bürger_Schupp_As_Arakawa_2014, title={Polarization
properties of single zinc-blende GaN/AlN quantum dots}, DOI={10.1103/physrevb.90.235312},
journal={Physical Review B}, author={Sergent, S. and Kako, S. and Bürger, M. and
Schupp, T. and As, Donat Josef and Arakawa, Y.}, year={2014} }'
chicago: Sergent, S., S. Kako, M. Bürger, T. Schupp, Donat Josef As, and Y. Arakawa.
“Polarization Properties of Single Zinc-Blende GaN/AlN Quantum Dots.” Physical
Review B, 2014. https://doi.org/10.1103/physrevb.90.235312.
ieee: S. Sergent, S. Kako, M. Bürger, T. Schupp, D. J. As, and Y. Arakawa, “Polarization
properties of single zinc-blende GaN/AlN quantum dots,” Physical Review B,
2014.
mla: Sergent, S., et al. “Polarization Properties of Single Zinc-Blende GaN/AlN
Quantum Dots.” Physical Review B, 2014, doi:10.1103/physrevb.90.235312.
short: S. Sergent, S. Kako, M. Bürger, T. Schupp, D.J. As, Y. Arakawa, Physical
Review B (2014).
date_created: 2019-03-29T13:43:44Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '230'
- _id: '429'
doi: 10.1103/physrevb.90.235312
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Polarization properties of single zinc-blende GaN/AlN quantum dots
type: journal_article
user_id: '14'
year: '2014'
...
---
_id: '4064'
abstract:
- lang: eng
text: "An anisotropic etching process for mesa structures using fluorinated plasma
with\r\nhydrogen addition was developed in an electron cyclotron resonance setup.
The evolution of the\r\nmesa morphology was studied in dependence on the gas composition,
the applied bias and the\r\npressure. The achieved side wall slope approached
90° with a negligible trenching. The aspect ratios\r\nof the fabricated structure
in the developed residue free ECR plasma etching process were between\r\n5 and
20."
article_type: original
author:
- first_name: Lars
full_name: Hiller, Lars
last_name: Hiller
- first_name: Thomas
full_name: Stauden, Thomas
last_name: Stauden
- first_name: Ricarda M.
full_name: Kemper, Ricarda M.
last_name: Kemper
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Jörg
full_name: Pezoldt, Jörg
last_name: Pezoldt
citation:
ama: Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. Hydrogen Effects
in ECR-Etching of 3C-SiC(100) Mesa Structures. Materials Science Forum.
2014;778-780:730-733. doi:10.4028/www.scientific.net/msf.778-780.730
apa: Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., & Pezoldt,
J. (2014). Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures. Materials
Science Forum, 778–780, 730–733. https://doi.org/10.4028/www.scientific.net/msf.778-780.730
bibtex: '@article{Hiller_Stauden_Kemper_Lindner_As_Pezoldt_2014, title={Hydrogen
Effects in ECR-Etching of 3C-SiC(100) Mesa Structures}, volume={778–780}, DOI={10.4028/www.scientific.net/msf.778-780.730},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Hiller,
Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat
J. and Pezoldt, Jörg}, year={2014}, pages={730–733} }'
chicago: 'Hiller, Lars, Thomas Stauden, Ricarda M. Kemper, Jörg Lindner, Donat J.
As, and Jörg Pezoldt. “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.”
Materials Science Forum 778–780 (2014): 730–33. https://doi.org/10.4028/www.scientific.net/msf.778-780.730.'
ieee: 'L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt,
“Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures,” Materials
Science Forum, vol. 778–780, pp. 730–733, 2014, doi: 10.4028/www.scientific.net/msf.778-780.730.'
mla: Hiller, Lars, et al. “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.”
Materials Science Forum, vol. 778–780, Trans Tech Publications, 2014, pp.
730–33, doi:10.4028/www.scientific.net/msf.778-780.730.
short: L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials
Science Forum 778–780 (2014) 730–733.
date_created: 2018-08-22T12:17:30Z
date_updated: 2023-10-09T09:08:12Z
ddc:
- '530'
department:
- _id: '286'
doi: 10.4028/www.scientific.net/msf.778-780.730
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-22T12:20:24Z
date_updated: 2018-08-22T12:20:24Z
file_id: '4065'
file_name: 2014_Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.pdf
file_size: 882721
relation: main_file
success: 1
file_date_updated: 2018-08-22T12:20:24Z
has_accepted_license: '1'
language:
- iso: eng
page: 730-733
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures
type: journal_article
user_id: '14931'
volume: 778-780
year: '2014'
...
---
_id: '3963'
abstract:
- lang: eng
text: "Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk
resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding
microdisks were patterned by means of electron beam lithography and a two step
reactive ion etching process. Micro-photoluminescence spectroscopy investigations
were performed for optical characterization. We analyzed the mode spacing for
disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional
finite difference time domain calculations were in good agreement\r\nwith the
experimental data. Whispering gallery modes of the radial orders 1 and 2 were
identified by means of simulated mode field distributions."
article_type: original
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: S.
full_name: Declair, S.
last_name: Declair
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery
modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied
Physics Letters. 2013;102(8):081105. doi:10.1063/1.4793653
apa: Bürger, M., Ruth, M., Declair, S., Förstner, J., Meier, C., & As, D. J.
(2013). Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots. Applied Physics Letters, 102(8), 081105. https://doi.org/10.1063/1.4793653
bibtex: '@article{Bürger_Ruth_Declair_Förstner_Meier_As_2013, title={Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots},
volume={102}, DOI={10.1063/1.4793653},
number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bürger,
M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat
Josef}, year={2013}, pages={081105} }'
chicago: 'Bürger, M., M. Ruth, S. Declair, Jens Förstner, Cedrik Meier, and Donat
Josef As. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar
GaN Quantum Dots.” Applied Physics Letters 102, no. 8 (2013): 081105. https://doi.org/10.1063/1.4793653.'
ieee: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,”
Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013.
mla: Bürger, M., et al. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks
Containing Non-Polar GaN Quantum Dots.” Applied Physics Letters, vol. 102,
no. 8, AIP Publishing, 2013, p. 081105, doi:10.1063/1.4793653.
short: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics
Letters 102 (2013) 081105.
date_created: 2018-08-21T07:43:22Z
date_updated: 2022-01-06T07:00:01Z
ddc:
- '530'
department:
- _id: '15'
- _id: '287'
- _id: '284'
- _id: '230'
- _id: '35'
doi: 10.1063/1.4793653
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-21T07:47:02Z
date_updated: 2018-09-04T20:08:52Z
file_id: '3964'
file_name: 2013-02 Bürger,Ruth,Declair,Förstner,Meier,As_Whispering gallery modes
in zinc-blende AlN microdisks containing non-polar GaN quantum dots.pdf
file_size: 935911
relation: main_file
file_date_updated: 2018-09-04T20:08:52Z
has_accepted_license: '1'
intvolume: ' 102'
issue: '8'
keyword:
- tet_topic_qd
- tet_topic_microdisk
language:
- iso: eng
oa: '1'
page: '081105'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots
type: journal_article
urn: '39635'
user_id: '14'
volume: 102
year: '2013'
...
---
_id: '13524'
author:
- first_name: M.
full_name: Landmann, M.
last_name: Landmann
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: Marcus
full_name: Röppischer, Marcus
last_name: Röppischer
- first_name: Christoph
full_name: Cobet, Christoph
last_name: Cobet
- first_name: Norbert
full_name: Esser, Norbert
last_name: Esser
- first_name: Thorsten
full_name: Schupp, Thorsten
last_name: Schupp
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
citation:
ama: Landmann M, Rauls E, Schmidt WG, et al. Transition energies and direct-indirect
band gap crossing in zinc-blende AlxGa1−xN. Physical Review B. 2013;87(19).
doi:10.1103/physrevb.87.195210
apa: Landmann, M., Rauls, E., Schmidt, W. G., Röppischer, M., Cobet, C., Esser,
N., Schupp, T., As, D. J., Feneberg, M., & Goldhahn, R. (2013). Transition
energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN. Physical
Review B, 87(19). https://doi.org/10.1103/physrevb.87.195210
bibtex: '@article{Landmann_Rauls_Schmidt_Röppischer_Cobet_Esser_Schupp_As_Feneberg_Goldhahn_2013,
title={Transition energies and direct-indirect band gap crossing in zinc-blende
AlxGa1−xN}, volume={87}, DOI={10.1103/physrevb.87.195210},
number={19}, journal={Physical Review B}, author={Landmann, M. and Rauls, E. and
Schmidt, Wolf Gero and Röppischer, Marcus and Cobet, Christoph and Esser, Norbert
and Schupp, Thorsten and As, Donat J. and Feneberg, Martin and Goldhahn, Rüdiger},
year={2013} }'
chicago: Landmann, M., E. Rauls, Wolf Gero Schmidt, Marcus Röppischer, Christoph
Cobet, Norbert Esser, Thorsten Schupp, Donat J. As, Martin Feneberg, and Rüdiger
Goldhahn. “Transition Energies and Direct-Indirect Band Gap Crossing in Zinc-Blende
AlxGa1−xN.” Physical Review B 87, no. 19 (2013). https://doi.org/10.1103/physrevb.87.195210.
ieee: 'M. Landmann et al., “Transition energies and direct-indirect band
gap crossing in zinc-blende AlxGa1−xN,” Physical Review B, vol. 87, no.
19, 2013, doi: 10.1103/physrevb.87.195210.'
mla: Landmann, M., et al. “Transition Energies and Direct-Indirect Band Gap Crossing
in Zinc-Blende AlxGa1−xN.” Physical Review B, vol. 87, no. 19, 2013, doi:10.1103/physrevb.87.195210.
short: M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T.
Schupp, D.J. As, M. Feneberg, R. Goldhahn, Physical Review B 87 (2013).
date_created: 2019-09-30T14:08:49Z
date_updated: 2023-10-09T09:08:39Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
doi: 10.1103/physrevb.87.195210
intvolume: ' 87'
issue: '19'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN
type: journal_article
user_id: '14931'
volume: 87
year: '2013'
...
---
_id: '4333'
author:
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
- first_name: Marcus
full_name: Röppischer, Marcus
last_name: Röppischer
- first_name: Christoph
full_name: Cobet, Christoph
last_name: Cobet
- first_name: Norbert
full_name: Esser, Norbert
last_name: Esser
- first_name: Jörg
full_name: Schörmann, Jörg
last_name: Schörmann
- first_name: Thorsten
full_name: Schupp, Thorsten
last_name: Schupp
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Florian
full_name: Hörich, Florian
last_name: Hörich
- first_name: Jürgen
full_name: Bläsing, Jürgen
last_name: Bläsing
- first_name: Alois
full_name: Krost, Alois
last_name: Krost
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
citation:
ama: Feneberg M, Röppischer M, Cobet C, et al. Optical properties of cubic GaN from
1 to 20 eV. Physical Review B. 2012;85(15). doi:10.1103/physrevb.85.155207
apa: Feneberg, M., Röppischer, M., Cobet, C., Esser, N., Schörmann, J., Schupp,
T., … Goldhahn, R. (2012). Optical properties of cubic GaN from 1 to 20 eV. Physical
Review B, 85(15). https://doi.org/10.1103/physrevb.85.155207
bibtex: '@article{Feneberg_Röppischer_Cobet_Esser_Schörmann_Schupp_As_Hörich_Bläsing_Krost_et
al._2012, title={Optical properties of cubic GaN from 1 to 20 eV}, volume={85},
DOI={10.1103/physrevb.85.155207},
number={15}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Feneberg, Martin and Röppischer, Marcus and Cobet, Christoph and
Esser, Norbert and Schörmann, Jörg and Schupp, Thorsten and As, Donat Josef and
Hörich, Florian and Bläsing, Jürgen and Krost, Alois and et al.}, year={2012}
}'
chicago: Feneberg, Martin, Marcus Röppischer, Christoph Cobet, Norbert Esser, Jörg
Schörmann, Thorsten Schupp, Donat Josef As, et al. “Optical Properties of Cubic
GaN from 1 to 20 EV.” Physical Review B 85, no. 15 (2012). https://doi.org/10.1103/physrevb.85.155207.
ieee: M. Feneberg et al., “Optical properties of cubic GaN from 1 to 20 eV,”
Physical Review B, vol. 85, no. 15, 2012.
mla: Feneberg, Martin, et al. “Optical Properties of Cubic GaN from 1 to 20 EV.”
Physical Review B, vol. 85, no. 15, American Physical Society (APS), 2012,
doi:10.1103/physrevb.85.155207.
short: M. Feneberg, M. Röppischer, C. Cobet, N. Esser, J. Schörmann, T. Schupp,
D.J. As, F. Hörich, J. Bläsing, A. Krost, R. Goldhahn, Physical Review B 85 (2012).
date_created: 2018-08-30T14:00:50Z
date_updated: 2022-01-06T07:00:56Z
doi: 10.1103/physrevb.85.155207
intvolume: ' 85'
issue: '15'
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Optical properties of cubic GaN from 1 to 20 eV
type: journal_article
user_id: '14'
volume: 85
year: '2012'
...