---
_id: '4116'
abstract:
- lang: eng
text: "Anisotropic etching processes for mesa structure formation using fluorinated
plasma\r\natmospheres in an electron cyclotron resonance (ECR) plasma etcher were
studied on Novasic\r\nsubstrates with 10 μm thick 3C-SiC(100) grown on Si(100).
To achieve reasonable etching rates, a\r\nspecial gas inlet system suitable for
injecting SF6 into the high density downstream Ar ECR plasma\r\nwas designed.
The influence of the etching mask material on the sidewall morphology was\r\ninvestigated.
Masking materials with small grain sizes are preferable to achieve a desired shape.\r\nThe
evolution of the mesa form was investigated in dependence on the gas composition,
the applied\r\nbias, the pressure and the composition of the gas atmosphere. The
achieved sidewall slope was 84.5\r\ndeg. The aspect ratios of the fabricated structures
in the developed residue free ECR plasma etching\r\nprocess were between 5 and
10. Mesa structures aligned to [100] and [110] directions were\r\nfabricated."
article_type: original
author:
- first_name: Lars
full_name: Hiller, Lars
last_name: Hiller
- first_name: Thomas
full_name: Stauden, Thomas
last_name: Stauden
- first_name: Ricarda M.
full_name: Kemper, Ricarda M.
last_name: Kemper
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Jörg
full_name: Pezoldt, Jörg
last_name: Pezoldt
citation:
ama: Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. ECR-Ectching of
Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. Materials Science
Forum. 2012;717-720:901-904. doi:10.4028/www.scientific.net/msf.717-720.901
apa: Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., & Pezoldt,
J. (2012). ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.
Materials Science Forum, 717–720, 901–904. https://doi.org/10.4028/www.scientific.net/msf.717-720.901
bibtex: '@article{Hiller_Stauden_Kemper_Lindner_As_Pezoldt_2012, title={ECR-Ectching
of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures}, volume={717–720},
DOI={10.4028/www.scientific.net/msf.717-720.901},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Hiller,
Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat
J. and Pezoldt, Jörg}, year={2012}, pages={901–904} }'
chicago: 'Hiller, Lars, Thomas Stauden, Ricarda M. Kemper, Jörg Lindner, Donat J.
As, and Jörg Pezoldt. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100)
Mesa Structures.” Materials Science Forum 717–720 (2012): 901–4. https://doi.org/10.4028/www.scientific.net/msf.717-720.901.'
ieee: 'L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt,
“ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures,” Materials
Science Forum, vol. 717–720, pp. 901–904, 2012, doi: 10.4028/www.scientific.net/msf.717-720.901.'
mla: Hiller, Lars, et al. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100)
Mesa Structures.” Materials Science Forum, vol. 717–720, Trans Tech Publications,
2012, pp. 901–04, doi:10.4028/www.scientific.net/msf.717-720.901.
short: L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials
Science Forum 717–720 (2012) 901–904.
conference:
location: Cleveland (USA)
name: International Conference on Silicon Carbide and Related Materials (ICSCRM)
2011
date_created: 2018-08-23T13:35:20Z
date_updated: 2023-10-09T09:09:13Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.4028/www.scientific.net/msf.717-720.901
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-23T13:37:42Z
date_updated: 2018-08-23T13:37:42Z
file_id: '4117'
file_name: ECR-etching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.pdf
file_size: 1309453
relation: main_file
success: 1
file_date_updated: 2018-08-23T13:37:42Z
has_accepted_license: '1'
language:
- iso: eng
page: 901-904
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
type: journal_article
user_id: '14931'
volume: 717-720
year: '2012'
...
---
_id: '4146'
abstract:
- lang: eng
text: The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001)
substrates by plasma-assisted molecular beam epitaxy is reported. The influence
of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase
domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting
in equal plane orientation and the same anti-phase boundaries. The presence of
the APDs is independent of the GaN layer thickness. Atomic force microscopy surface
analysis indicates lateral growth anisotropy of GaN facets in dependence of the
APD orientation. This anisotropy can be linked to Ga and N face types of the {111}
planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to
3C-SiC, however, a difference in GaN phase composition for the two types of APDs
can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence
spectroscopy.
article_number: '123512'
article_type: original
author:
- first_name: Ricarda
full_name: Maria Kemper, Ricarda
last_name: Maria Kemper
- first_name: Thorsten
full_name: Schupp, Thorsten
last_name: Schupp
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Thomas
full_name: Niendorf, Thomas
last_name: Niendorf
- first_name: Hans-Jürgen
full_name: Maier, Hans-Jürgen
last_name: Maier
- first_name: Anja
full_name: Dempewolf, Anja
last_name: Dempewolf
- first_name: Frank
full_name: Bertram, Frank
last_name: Bertram
- first_name: Jürgen
full_name: Christen, Jürgen
last_name: Christen
- first_name: Ronny
full_name: Kirste, Ronny
last_name: Kirste
- first_name: Axel
full_name: Hoffmann, Axel
last_name: Hoffmann
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Donat
full_name: As, Donat
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN.
Journal of Applied Physics. 2011;110(12). doi:10.1063/1.3666050
apa: Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H.-J., Dempewolf,
A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., & As,
D. (2011). Anti-phase domains in cubic GaN. Journal of Applied Physics,
110(12), Article 123512. https://doi.org/10.1063/1.3666050
bibtex: '@article{Maria Kemper_Schupp_Häberlen_Niendorf_Maier_Dempewolf_Bertram_Christen_Kirste_Hoffmann_et
al._2011, title={Anti-phase domains in cubic GaN}, volume={110}, DOI={10.1063/1.3666050},
number={12123512}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf,
Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen,
Jürgen and Kirste, Ronny and Hoffmann, Axel and et al.}, year={2011} }'
chicago: Maria Kemper, Ricarda, Thorsten Schupp, Maik Häberlen, Thomas Niendorf,
Hans-Jürgen Maier, Anja Dempewolf, Frank Bertram, et al. “Anti-Phase Domains in
Cubic GaN.” Journal of Applied Physics 110, no. 12 (2011). https://doi.org/10.1063/1.3666050.
ieee: 'R. Maria Kemper et al., “Anti-phase domains in cubic GaN,” Journal
of Applied Physics, vol. 110, no. 12, Art. no. 123512, 2011, doi: 10.1063/1.3666050.'
mla: Maria Kemper, Ricarda, et al. “Anti-Phase Domains in Cubic GaN.” Journal
of Applied Physics, vol. 110, no. 12, 123512, AIP Publishing, 2011, doi:10.1063/1.3666050.
short: R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf,
F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of
Applied Physics 110 (2011).
date_created: 2018-08-27T12:40:30Z
date_updated: 2023-10-09T09:10:50Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3666050
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:42:38Z
date_updated: 2018-08-27T12:42:38Z
file_id: '4147'
file_name: Anti-phase domains in cubic GaN.pdf
file_size: 3305430
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:42:38Z
has_accepted_license: '1'
intvolume: ' 110'
issue: '12'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Anti-phase domains in cubic GaN
type: journal_article
user_id: '14931'
volume: 110
year: '2011'
...
---
_id: '13568'
author:
- first_name: C.
full_name: Mietze, C.
last_name: Mietze
- first_name: M.
full_name: Landmann, M.
last_name: Landmann
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: H.
full_name: Machhadani, H.
last_name: Machhadani
- first_name: S.
full_name: Sakr, S.
last_name: Sakr
- first_name: M.
full_name: Tchernycheva, M.
last_name: Tchernycheva
- first_name: F. H.
full_name: Julien, F. H.
last_name: Julien
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Mietze C, Landmann M, Rauls E, et al. Band offsets in cubic GaN/AlN superlattices.
Physical Review B. 2011;83(19). doi:10.1103/physrevb.83.195301
apa: Mietze, C., Landmann, M., Rauls, E., Machhadani, H., Sakr, S., Tchernycheva,
M., Julien, F. H., Schmidt, W. G., Lischka, K., & As, D. J. (2011). Band offsets
in cubic GaN/AlN superlattices. Physical Review B, 83(19). https://doi.org/10.1103/physrevb.83.195301
bibtex: '@article{Mietze_Landmann_Rauls_Machhadani_Sakr_Tchernycheva_Julien_Schmidt_Lischka_As_2011,
title={Band offsets in cubic GaN/AlN superlattices}, volume={83}, DOI={10.1103/physrevb.83.195301},
number={19}, journal={Physical Review B}, author={Mietze, C. and Landmann, M.
and Rauls, E. and Machhadani, H. and Sakr, S. and Tchernycheva, M. and Julien,
F. H. and Schmidt, Wolf Gero and Lischka, K. and As, Donat Josef}, year={2011}
}'
chicago: Mietze, C., M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva,
F. H. Julien, Wolf Gero Schmidt, K. Lischka, and Donat Josef As. “Band Offsets
in Cubic GaN/AlN Superlattices.” Physical Review B 83, no. 19 (2011). https://doi.org/10.1103/physrevb.83.195301.
ieee: 'C. Mietze et al., “Band offsets in cubic GaN/AlN superlattices,” Physical
Review B, vol. 83, no. 19, 2011, doi: 10.1103/physrevb.83.195301.'
mla: Mietze, C., et al. “Band Offsets in Cubic GaN/AlN Superlattices.” Physical
Review B, vol. 83, no. 19, 2011, doi:10.1103/physrevb.83.195301.
short: C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva,
F.H. Julien, W.G. Schmidt, K. Lischka, D.J. As, Physical Review B 83 (2011).
date_created: 2019-10-01T09:11:23Z
date_updated: 2025-12-05T10:41:18Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '284'
- _id: '35'
- _id: '230'
- _id: '27'
doi: 10.1103/physrevb.83.195301
intvolume: ' 83'
issue: '19'
language:
- iso: eng
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
status: public
title: Band offsets in cubic GaN/AlN superlattices
type: journal_article
user_id: '16199'
volume: 83
year: '2011'
...
---
_id: '13835'
author:
- first_name: A.
full_name: Scholle, A.
last_name: Scholle
- first_name: S.
full_name: Greulich-Weber, S.
last_name: Greulich-Weber
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Ch.
full_name: Mietze, Ch.
last_name: Mietze
- first_name: N. T.
full_name: Son, N. T.
last_name: Son
- first_name: C.
full_name: Hemmingsson, C.
last_name: Hemmingsson
- first_name: B.
full_name: Monemar, B.
last_name: Monemar
- first_name: E.
full_name: Janzén, E.
last_name: Janzén
- first_name: Uwe
full_name: Gerstmann, Uwe
id: '171'
last_name: Gerstmann
orcid: 0000-0002-4476-223X
- first_name: S.
full_name: Sanna, S.
last_name: Sanna
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: Scholle A, Greulich-Weber S, As DJ, et al. Magnetic characterization of conductance
electrons in GaN. physica status solidi (b). 2010;247(7):1728-1731. doi:10.1002/pssb.200983582
apa: Scholle, A., Greulich-Weber, S., As, D. J., Mietze, Ch., Son, N. T., Hemmingsson,
C., Monemar, B., Janzén, E., Gerstmann, U., Sanna, S., Rauls, E., & Schmidt,
W. G. (2010). Magnetic characterization of conductance electrons in GaN. Physica
Status Solidi (b), 247(7), 1728–1731. https://doi.org/10.1002/pssb.200983582
bibtex: '@article{Scholle_Greulich-Weber_As_Mietze_Son_Hemmingsson_Monemar_Janzén_Gerstmann_Sanna_et
al._2010, title={Magnetic characterization of conductance electrons in GaN}, volume={247},
DOI={10.1002/pssb.200983582},
number={7}, journal={physica status solidi (b)}, author={Scholle, A. and Greulich-Weber,
S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and
Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and et al.}, year={2010},
pages={1728–1731} }'
chicago: 'Scholle, A., S. Greulich-Weber, Donat Josef As, Ch. Mietze, N. T. Son,
C. Hemmingsson, B. Monemar, et al. “Magnetic Characterization of Conductance Electrons
in GaN.” Physica Status Solidi (b) 247, no. 7 (2010): 1728–31. https://doi.org/10.1002/pssb.200983582.'
ieee: 'A. Scholle et al., “Magnetic characterization of conductance electrons
in GaN,” physica status solidi (b), vol. 247, no. 7, pp. 1728–1731, 2010,
doi: 10.1002/pssb.200983582.'
mla: Scholle, A., et al. “Magnetic Characterization of Conductance Electrons in
GaN.” Physica Status Solidi (b), vol. 247, no. 7, 2010, pp. 1728–31, doi:10.1002/pssb.200983582.
short: A. Scholle, S. Greulich-Weber, D.J. As, Ch. Mietze, N.T. Son, C. Hemmingsson,
B. Monemar, E. Janzén, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt, Physica
Status Solidi (b) 247 (2010) 1728–1731.
date_created: 2019-10-15T07:40:58Z
date_updated: 2025-12-16T07:46:59Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '284'
- _id: '790'
- _id: '35'
- _id: '230'
doi: 10.1002/pssb.200983582
funded_apc: '1'
intvolume: ' 247'
issue: '7'
language:
- iso: eng
page: 1728-1731
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Magnetic characterization of conductance electrons in GaN
type: journal_article
user_id: '16199'
volume: 247
year: '2010'
...
---
_id: '4218'
abstract:
- lang: eng
text: 'In this work we focus on the fabrication of ohmic contacts and of Schottky
barrier devices (SBD) on non-polar cubic GaN epilayers grown by molecular beam
epitaxy (MBE). A Ti/Al/Ni/Au metallization was used for ohmic contacts and the
contact resistance was measured by transmission line measurements (TLM). Ni, Pd,
Ag and NiSi Schottky barrier devices 300 µm in diameter were fabricated by thermal
evaporation using contact lithography on cubic GaN epilayers. The current-voltage
(I-V) and the capacity-voltage (C-V) characteristics were studied at room temperature
in detail. A clear rectifying behavior was measured in all SBDs. In the Ni and
Ag SBDs an abnormal large leakage current under reverse bias was observed. Isochronal
thermal annealing of these Ni and Ag based SBDs at 200°C in air improved the reverse
characteristics by up to three orders of magnitude. This is in contrast to the
Pd contacts, where the as grown contact showed already good performance and thermal
annealing had nearly no influence on the I-V characteristics. For all SBDs the
magnitude of the reverse current is generally larger than that expected due to
thermionic emission and an exponential increase of the reverse current is observed
with increasing reverse voltage. In-depth analysis of the I-V characteristic showed
that a thin surface barrier is formed at the metal semiconductor interface and
that crystal defects like dislocations may be the reasons for the discrepancy
between experimental data and thermionic emission theory. '
author:
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Elena
full_name: Tschumak, Elena
last_name: Tschumak
- first_name: Irina
full_name: Laubenstein, Irina
last_name: Laubenstein
- first_name: Ricarda M.
full_name: Kemper, Ricarda M.
last_name: Kemper
- first_name: Klaus
full_name: Lischka, Klaus
last_name: Lischka
citation:
ama: 'As DJ, Tschumak E, Laubenstein I, Kemper RM, Lischka K. Schottky and Ohmic
Contacts on Non-Polar Cubic GaN Epilayers. In: Materials Research Society Symposium
Proceedings. Vol 1108. Materials Research Society; 2009:3-8. doi:10.1557/proc-1108-a01-02'
apa: As, D. J., Tschumak, E., Laubenstein, I., Kemper, R. M., & Lischka, K.
(2009). Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers. Materials
Research Society Symposium Proceedings, 1108, 3–8. https://doi.org/10.1557/proc-1108-a01-02
bibtex: '@inproceedings{As_Tschumak_Laubenstein_Kemper_Lischka_2009, title={Schottky
and Ohmic Contacts on Non-Polar Cubic GaN Epilayers}, volume={1108}, DOI={10.1557/proc-1108-a01-02},
booktitle={Materials Research Society Symposium Proceedings}, publisher={Materials
Research Society}, author={As, Donat J. and Tschumak, Elena and Laubenstein, Irina
and Kemper, Ricarda M. and Lischka, Klaus}, year={2009}, pages={3–8} }'
chicago: As, Donat J., Elena Tschumak, Irina Laubenstein, Ricarda M. Kemper, and
Klaus Lischka. “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers.”
In Materials Research Society Symposium Proceedings, 1108:3–8. Materials
Research Society, 2009. https://doi.org/10.1557/proc-1108-a01-02.
ieee: 'D. J. As, E. Tschumak, I. Laubenstein, R. M. Kemper, and K. Lischka, “Schottky
and Ohmic Contacts on Non-Polar Cubic GaN Epilayers,” in Materials Research
Society Symposium Proceedings, 2009, vol. 1108, pp. 3–8, doi: 10.1557/proc-1108-a01-02.'
mla: As, Donat J., et al. “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers.”
Materials Research Society Symposium Proceedings, vol. 1108, Materials
Research Society, 2009, pp. 3–8, doi:10.1557/proc-1108-a01-02.
short: 'D.J. As, E. Tschumak, I. Laubenstein, R.M. Kemper, K. Lischka, in: Materials
Research Society Symposium Proceedings, Materials Research Society, 2009, pp.
3–8.'
date_created: 2018-08-28T12:57:35Z
date_updated: 2023-10-09T09:12:30Z
department:
- _id: '15'
- _id: '284'
doi: 10.1557/proc-1108-a01-02
intvolume: ' 1108'
language:
- iso: eng
page: 3-8
publication: Materials Research Society Symposium Proceedings
publication_status: published
publisher: Materials Research Society
status: public
title: Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers
type: conference
user_id: '14931'
volume: 1108
year: '2009'
...