---
_id: '46573'
abstract:
- lang: eng
text: 'An ultra-fast change of the absorption onset for zincblende gallium-nitride
(zb-GaN) (fundamental bandgap: 3.23 eV) is observed by investigating the imaginary
part of the dielectric function using time-dependent femtosecond pump–probe spectroscopic
ellipsometry between 2.9 and 3.7 eV. The 266 nm (4.66 eV) pump pulses induce a
large electron–hole pair concentration up to 4×1020cm−3, which shift the transition
energy between conduction and valence bands due to many-body effects up to ≈500 meV.
Here, the absorption onset increases due to band filling while the bandgap renormalization
at the same time decreases the bandgap. Additionally, the absorption of the pump-beam
creates a free-carrier profile within the 605 nm zb-GaN layer with high free-carrier
concentrations at the surface, and low concentrations at the interface to the
substrate. This leads to varying optical properties from the sample surface (high
transition energy) to substrate (low transition energy), which are taken into
account by grading analysis for an accurate description of the experimental data.
For this, a model describing the time- and position-dependent free-carrier concentration
is formulated by considering the relaxation, recombination, and diffusion of those
carriers. We provide a quantitative analysis of optical experimental data (ellipsometric
angles Ψ and Δ) as well as a plot for the time-dependent change of the imaginary
part of the dielectric function.'
author:
- first_name: Elias
full_name: Baron, Elias
last_name: Baron
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Shirly
full_name: Espinoza, Shirly
last_name: Espinoza
- first_name: Martin
full_name: Zahradník, Martin
last_name: Zahradník
- first_name: Mateusz
full_name: Rebarz, Mateusz
last_name: Rebarz
- first_name: Jakob
full_name: Andreasson, Jakob
last_name: Andreasson
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
citation:
ama: Baron E, Goldhahn R, Espinoza S, et al. Time-resolved pump–probe spectroscopic
ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal
of Applied Physics. 2023;134(7). doi:10.1063/5.0153091
apa: Baron, E., Goldhahn, R., Espinoza, S., Zahradník, M., Rebarz, M., Andreasson,
J., Deppe, M., As, D. J., & Feneberg, M. (2023). Time-resolved pump–probe
spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function.
Journal of Applied Physics, 134(7). https://doi.org/10.1063/5.0153091
bibtex: '@article{Baron_Goldhahn_Espinoza_Zahradník_Rebarz_Andreasson_Deppe_As_Feneberg_2023,
title={Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination
of the dielectric function}, volume={134}, DOI={10.1063/5.0153091},
number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Baron, Elias and Goldhahn, Rüdiger and Espinoza, Shirly and Zahradník,
Martin and Rebarz, Mateusz and Andreasson, Jakob and Deppe, Michael and As, Donat
Josef and Feneberg, Martin}, year={2023} }'
chicago: Baron, Elias, Rüdiger Goldhahn, Shirly Espinoza, Martin Zahradník, Mateusz
Rebarz, Jakob Andreasson, Michael Deppe, Donat Josef As, and Martin Feneberg.
“Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination
of the Dielectric Function.” Journal of Applied Physics 134, no. 7 (2023).
https://doi.org/10.1063/5.0153091.
ieee: 'E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry
of cubic GaN. I. Determination of the dielectric function,” Journal of Applied
Physics, vol. 134, no. 7, 2023, doi: 10.1063/5.0153091.'
mla: Baron, Elias, et al. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of
Cubic GaN. I. Determination of the Dielectric Function.” Journal of Applied
Physics, vol. 134, no. 7, AIP Publishing, 2023, doi:10.1063/5.0153091.
short: E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson,
M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023).
date_created: 2023-08-18T08:17:41Z
date_updated: 2023-10-09T09:17:15Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0153091
intvolume: ' 134'
issue: '7'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination
of the dielectric function
type: journal_article
user_id: '14931'
volume: 134
year: '2023'
...
---
_id: '46132'
author:
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered
3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. physica status
solidi (b). 2023;260(7). doi:10.1002/pssb.202300034
apa: Littmann, M., Reuter, D., & As, D. J. (2023). Remote Epitaxy of Cubic Gallium
Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam
Epitaxy. Physica Status Solidi (b), 260(7). https://doi.org/10.1002/pssb.202300034
bibtex: '@article{Littmann_Reuter_As_2023, title={Remote Epitaxy of Cubic Gallium
Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam
Epitaxy}, volume={260}, DOI={10.1002/pssb.202300034},
number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Littmann,
Mario and Reuter, Dirk and As, Donat Josef}, year={2023} }'
chicago: Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic
Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular
Beam Epitaxy.” Physica Status Solidi (b) 260, no. 7 (2023). https://doi.org/10.1002/pssb.202300034.
ieee: 'M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride
on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,”
physica status solidi (b), vol. 260, no. 7, 2023, doi: 10.1002/pssb.202300034.'
mla: Littmann, Mario, et al. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered
3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” Physica Status
Solidi (b), vol. 260, no. 7, Wiley, 2023, doi:10.1002/pssb.202300034.
short: M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).
date_created: 2023-07-25T08:06:13Z
date_updated: 2023-07-25T08:07:20Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.202300034
intvolume: ' 260'
issue: '7'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates
by Plasma‐Assisted Molecular Beam Epitaxy
type: journal_article
user_id: '42514'
volume: 260
year: '2023'
...
---
_id: '46741'
author:
- first_name: Mario Fabian
full_name: Zscherp, Mario Fabian
last_name: Zscherp
- first_name: Silas Aurel
full_name: Jentsch, Silas Aurel
last_name: Jentsch
- first_name: Marius Johannes
full_name: Müller, Marius Johannes
last_name: Müller
- first_name: Vitalii
full_name: Lider, Vitalii
last_name: Lider
- first_name: Celina
full_name: Becker, Celina
last_name: Becker
- first_name: Limei
full_name: Chen, Limei
last_name: Chen
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Falco
full_name: Meier, Falco
last_name: Meier
- first_name: Andreas
full_name: Beyer, Andreas
last_name: Beyer
- first_name: Detlev Michael
full_name: Hofmann, Detlev Michael
last_name: Hofmann
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Peter Jens
full_name: Klar, Peter Jens
last_name: Klar
- first_name: Kerstin
full_name: Volz, Kerstin
last_name: Volz
- first_name: Sangam
full_name: Chatterjee, Sangam
last_name: Chatterjee
- first_name: Jörg
full_name: Schörmann, Jörg
last_name: Schörmann
citation:
ama: Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of
GaN/InN in MBE Growth of Cubic InxGa1–xN.
ACS Applied Materials & Interfaces. 2023;15(33):39513-39522. doi:10.1021/acsami.3c06319
apa: Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen,
L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J.,
Volz, K., Chatterjee, S., & Schörmann, J. (2023). Overcoming the Miscibility
Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.
ACS Applied Materials & Interfaces, 15(33), 39513–39522.
https://doi.org/10.1021/acsami.3c06319
bibtex: '@article{Zscherp_Jentsch_Müller_Lider_Becker_Chen_Littmann_Meier_Beyer_Hofmann_et
al._2023, title={Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic
InxGa1–xN}, volume={15}, DOI={10.1021/acsami.3c06319},
number={33}, journal={ACS Applied Materials & Interfaces}, publisher={American
Chemical Society (ACS)}, author={Zscherp, Mario Fabian and Jentsch, Silas Aurel
and Müller, Marius Johannes and Lider, Vitalii and Becker, Celina and Chen, Limei
and Littmann, Mario and Meier, Falco and Beyer, Andreas and Hofmann, Detlev Michael
and et al.}, year={2023}, pages={39513–39522} }'
chicago: 'Zscherp, Mario Fabian, Silas Aurel Jentsch, Marius Johannes Müller, Vitalii
Lider, Celina Becker, Limei Chen, Mario Littmann, et al. “Overcoming the Miscibility
Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.”
ACS Applied Materials & Interfaces 15, no. 33 (2023): 39513–22.
https://doi.org/10.1021/acsami.3c06319.'
ieee: 'M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in
MBE Growth of Cubic InxGa1–xN,” ACS Applied
Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi:
10.1021/acsami.3c06319.'
mla: Zscherp, Mario Fabian, et al. “Overcoming the Miscibility Gap of GaN/InN in
MBE Growth of Cubic InxGa1–xN.” ACS Applied
Materials & Interfaces, vol. 15, no. 33, American Chemical Society
(ACS), 2023, pp. 39513–22, doi:10.1021/acsami.3c06319.
short: M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M.
Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee,
J. Schörmann, ACS Applied Materials & Interfaces 15 (2023) 39513–39522.
date_created: 2023-08-28T06:45:20Z
date_updated: 2023-08-28T06:46:23Z
department:
- _id: '15'
- _id: '230'
doi: 10.1021/acsami.3c06319
intvolume: ' 15'
issue: '33'
keyword:
- General Materials Science
language:
- iso: eng
page: 39513-39522
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN
type: journal_article
user_id: '42514'
volume: 15
year: '2023'
...
---
_id: '35232'
article_number: '2200508'
author:
- first_name: Falco
full_name: Meier, Falco
last_name: Meier
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Julius
full_name: Bürger, Julius
id: '46952'
last_name: Bürger
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Daniel
full_name: Kool, Daniel
id: '44586'
last_name: Kool
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium
Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b).
Published online 2022. doi:10.1002/pssb.202200508
apa: Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter,
D., & As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in
Nanoscopic Silicon Dioxide Masks. Physica Status Solidi (b), Article 2200508.
https://doi.org/10.1002/pssb.202200508
bibtex: '@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective
Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={10.1002/pssb.202200508}, number={2200508},
journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and
Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner,
Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }'
chicago: Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool,
Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic
Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” Physica Status Solidi
(b), 2022. https://doi.org/10.1002/pssb.202200508.
ieee: 'F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in
Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no.
2200508, 2022, doi: 10.1002/pssb.202200508.'
mla: Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic
Silicon Dioxide Masks.” Physica Status Solidi (b), 2200508, Wiley, 2022,
doi:10.1002/pssb.202200508.
short: F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter,
D.J. As, Physica Status Solidi (b) (2022).
date_created: 2023-01-04T14:51:51Z
date_updated: 2023-01-04T14:53:24Z
department:
- _id: '15'
doi: 10.1002/pssb.202200508
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide
Masks
type: journal_article
user_id: '77496'
year: '2022'
...
---
_id: '23842'
article_number: '025101'
author:
- first_name: Elias
full_name: Baron, Elias
last_name: Baron
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Fabian
full_name: Tacken, Fabian
last_name: Tacken
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: 'Baron E, Feneberg M, Goldhahn R, Deppe M, Tacken F, As DJ. Optical evidence
of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy
system. Journal of Physics D: Applied Physics. 2021. doi:10.1088/1361-6463/abb97a'
apa: 'Baron, E., Feneberg, M., Goldhahn, R., Deppe, M., Tacken, F., & As, D.
J. (2021). Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N
alloy system. Journal of Physics D: Applied Physics. https://doi.org/10.1088/1361-6463/abb97a'
bibtex: '@article{Baron_Feneberg_Goldhahn_Deppe_Tacken_As_2021, title={Optical evidence
of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy
system}, DOI={10.1088/1361-6463/abb97a},
number={025101}, journal={Journal of Physics D: Applied Physics}, author={Baron,
Elias and Feneberg, Martin and Goldhahn, Rüdiger and Deppe, Michael and Tacken,
Fabian and As, Donat Josef}, year={2021} }'
chicago: 'Baron, Elias, Martin Feneberg, Rüdiger Goldhahn, Michael Deppe, Fabian
Tacken, and Donat Josef As. “Optical Evidence of Many-Body Effects in the Zincblende
Al$_\mathrm{x}$Ga$_\mathrm{1-X}$N Alloy System.” Journal of Physics D: Applied
Physics, 2021. https://doi.org/10.1088/1361-6463/abb97a.'
ieee: 'E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, and D. J. As, “Optical
evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N
alloy system,” Journal of Physics D: Applied Physics, 2021.'
mla: 'Baron, Elias, et al. “Optical Evidence of Many-Body Effects in the Zincblende
Al$_\mathrm{x}$Ga$_\mathrm{1-X}$N Alloy System.” Journal of Physics D: Applied
Physics, 025101, 2021, doi:10.1088/1361-6463/abb97a.'
short: 'E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, D.J. As, Journal
of Physics D: Applied Physics (2021).'
date_created: 2021-09-07T09:19:46Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1088/1361-6463/abb97a
language:
- iso: eng
publication: 'Journal of Physics D: Applied Physics'
publication_identifier:
issn:
- 0022-3727
- 1361-6463
publication_status: published
status: public
title: Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N
alloy system
type: journal_article
user_id: '14'
year: '2021'
...
---
_id: '25227'
abstract:
- lang: eng
text: AbstractQuantum well (QW) heterostructures
have been extensively used for the realization of a wide range of optical and
electronic devices. Exploiting their potential for further improvement and development
requires a fundamental understanding of their electronic structure. So far, the
most commonly used experimental techniques for this purpose have been all-optical
spectroscopy methods that, however, are generally averaging in momentum space.
Additional information can be gained by angle-resolved photoelectron spectroscopy
(ARPES), which measures the electronic structure with momentum resolution. Here
we report on the use of extremely low-energy ARPES (photon energy ~ 7 eV) to increase
depth sensitivity and access buried QW states, located at 3 nm and 6 nm below
the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We
find that the QW states in cubic-GaN/AlN can indeed be observed, but not their
energy dispersion, because of the high surface roughness. The GaAs/AlGaAs QW states,
on the other hand, are buried too deep to be detected by extremely low-energy
ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs
show distinct features in momentum space, which can be reconducted to the band
structure of the topmost surface layer of the QW structure. Our results provide
important information about the samples’ properties required to perform extremely
low-energy ARPES experiments on electronic states buried in semiconductor heterostructures.
article_number: '19081'
article_type: original
author:
- first_name: Mahdi
full_name: Hajlaoui, Mahdi
last_name: Hajlaoui
- first_name: Stefano
full_name: Ponzoni, Stefano
last_name: Ponzoni
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Tobias
full_name: Henksmeier, Tobias
last_name: Henksmeier
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Gunther
full_name: Springholz, Gunther
last_name: Springholz
- first_name: Claus Michael
full_name: Schneider, Claus Michael
last_name: Schneider
- first_name: Stefan
full_name: Cramm, Stefan
last_name: Cramm
- first_name: Mirko
full_name: Cinchetti, Mirko
last_name: Cinchetti
citation:
ama: Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum
well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports.
2021;11. doi:10.1038/s41598-021-98569-6
apa: Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D.,
Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., & Cinchetti, M.
(2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and
GaAs/AlGaAs heterostructures. Scientific Reports, 11, Article 19081.
https://doi.org/10.1038/s41598-021-98569-6
bibtex: '@article{Hajlaoui_Ponzoni_Deppe_Henksmeier_As_Reuter_Zentgraf_Springholz_Schneider_Cramm_et
al._2021, title={Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN
and GaAs/AlGaAs heterostructures}, volume={11}, DOI={10.1038/s41598-021-98569-6},
number={19081}, journal={Scientific Reports}, author={Hajlaoui, Mahdi and Ponzoni,
Stefano and Deppe, Michael and Henksmeier, Tobias and As, Donat Josef and Reuter,
Dirk and Zentgraf, Thomas and Springholz, Gunther and Schneider, Claus Michael
and Cramm, Stefan and et al.}, year={2021} }'
chicago: Hajlaoui, Mahdi, Stefano Ponzoni, Michael Deppe, Tobias Henksmeier, Donat
Josef As, Dirk Reuter, Thomas Zentgraf, et al. “Extremely Low-Energy ARPES of
Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” Scientific
Reports 11 (2021). https://doi.org/10.1038/s41598-021-98569-6.
ieee: 'M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states
in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” Scientific Reports,
vol. 11, Art. no. 19081, 2021, doi: 10.1038/s41598-021-98569-6.'
mla: Hajlaoui, Mahdi, et al. “Extremely Low-Energy ARPES of Quantum Well States
in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” Scientific Reports,
vol. 11, 19081, 2021, doi:10.1038/s41598-021-98569-6.
short: M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T.
Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports
11 (2021).
date_created: 2021-10-01T07:29:15Z
date_updated: 2023-10-09T09:15:12Z
department:
- _id: '15'
- _id: '230'
- _id: '289'
doi: 10.1038/s41598-021-98569-6
intvolume: ' 11'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://www.nature.com/articles/s41598-021-98569-6
oa: '1'
project:
- _id: '53'
grant_number: '231447078'
name: TRR 142
- _id: '54'
name: TRR 142 - Project Area A
- _id: '65'
grant_number: '231447078'
name: TRR 142 - Subproject A8
- _id: '55'
name: TRR 142 - Project Area B
- _id: '67'
name: TRR 142 - Subproject B2
- _id: '63'
grant_number: '231447078'
name: TRR 142 - Subproject A6
publication: Scientific Reports
publication_identifier:
issn:
- 2045-2322
publication_status: published
quality_controlled: '1'
status: public
title: Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs
heterostructures
type: journal_article
user_id: '14931'
volume: 11
year: '2021'
...
---
_id: '23843'
article_number: '075013'
author:
- first_name: F.
full_name: Meier, F.
last_name: Meier
- first_name: M.
full_name: Protte, M.
last_name: Protte
- first_name: E.
full_name: Baron, E.
last_name: Baron
- first_name: M.
full_name: Feneberg, M.
last_name: Feneberg
- first_name: R.
full_name: Goldhahn, R.
last_name: Goldhahn
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride
on silicon (001) and 3C-silicon carbide (001). AIP Advances. Published
online 2021. doi:10.1063/5.0053865
apa: Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &
As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001)
and 3C-silicon carbide (001). AIP Advances, Article 075013. https://doi.org/10.1063/5.0053865
bibtex: '@article{Meier_Protte_Baron_Feneberg_Goldhahn_Reuter_As_2021, title={Selective
area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)},
DOI={10.1063/5.0053865}, number={075013},
journal={AIP Advances}, author={Meier, F. and Protte, M. and Baron, E. and Feneberg,
M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}, year={2021} }'
chicago: Meier, F., M. Protte, E. Baron, M. Feneberg, R. Goldhahn, Dirk Reuter,
and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride on Silicon
(001) and 3C-Silicon Carbide (001).” AIP Advances, 2021. https://doi.org/10.1063/5.0053865.
ieee: 'F. Meier et al., “Selective area growth of cubic gallium nitride on
silicon (001) and 3C-silicon carbide (001),” AIP Advances, Art. no. 075013,
2021, doi: 10.1063/5.0053865.'
mla: Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon
(001) and 3C-Silicon Carbide (001).” AIP Advances, 075013, 2021, doi:10.1063/5.0053865.
short: F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J.
As, AIP Advances (2021).
date_created: 2021-09-07T09:20:42Z
date_updated: 2023-10-09T09:01:15Z
department:
- _id: '230'
- _id: '429'
doi: 10.1063/5.0053865
language:
- iso: eng
publication: AIP Advances
publication_identifier:
issn:
- 2158-3226
publication_status: published
status: public
title: Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon
carbide (001)
type: journal_article
user_id: '14931'
year: '2021'
...
---
_id: '23838'
author:
- first_name: Abbes
full_name: Beloufa, Abbes
last_name: Beloufa
- first_name: Driss
full_name: Bouguenna, Driss
last_name: Bouguenna
- first_name: Nawel
full_name: Kermas, Nawel
last_name: Kermas
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and
Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal
of Electronic Materials. 2020:2008-2017. doi:10.1007/s11664-019-07927-8
apa: Beloufa, A., Bouguenna, D., Kermas, N., & As, D. J. (2020). A Physics-Based
Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.
Journal of Electronic Materials, 2008–2017. https://doi.org/10.1007/s11664-019-07927-8
bibtex: '@article{Beloufa_Bouguenna_Kermas_As_2020, title={A Physics-Based Compact
Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs},
DOI={10.1007/s11664-019-07927-8},
journal={Journal of Electronic Materials}, author={Beloufa, Abbes and Bouguenna,
Driss and Kermas, Nawel and As, Donat Josef}, year={2020}, pages={2008–2017} }'
chicago: Beloufa, Abbes, Driss Bouguenna, Nawel Kermas, and Donat Josef As. “A Physics-Based
Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.”
Journal of Electronic Materials, 2020, 2008–17. https://doi.org/10.1007/s11664-019-07927-8.
ieee: A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact
Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,”
Journal of Electronic Materials, pp. 2008–2017, 2020.
mla: Beloufa, Abbes, et al. “A Physics-Based Compact Static and Dynamic Characteristics
Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” Journal of Electronic Materials,
2020, pp. 2008–17, doi:10.1007/s11664-019-07927-8.
short: A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials
(2020) 2008–2017.
date_created: 2021-09-07T09:15:01Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
doi: 10.1007/s11664-019-07927-8
language:
- iso: eng
page: 2008-2017
publication: Journal of Electronic Materials
publication_identifier:
issn:
- 0361-5235
- 1543-186X
publication_status: published
status: public
title: A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN
MOS-HEMTs
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '23840'
article_number: '1900522'
author:
- first_name: Elias
full_name: Baron, Elias
last_name: Baron
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
citation:
ama: Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape
Analysis of Highly n‐Type Doped Zincblende GaN. physica status solidi (b).
2020. doi:10.1002/pssb.201900522
apa: Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2020). Photoluminescence
Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. Physica Status Solidi
(B). https://doi.org/10.1002/pssb.201900522
bibtex: '@article{Baron_Goldhahn_Deppe_As_Feneberg_2020, title={Photoluminescence
Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}, DOI={10.1002/pssb.201900522},
number={1900522}, journal={physica status solidi (b)}, author={Baron, Elias and
Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin},
year={2020} }'
chicago: Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin
Feneberg. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende
GaN.” Physica Status Solidi (B), 2020. https://doi.org/10.1002/pssb.201900522.
ieee: E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence
Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” physica status
solidi (b), 2020.
mla: Baron, Elias, et al. “Photoluminescence Line‐Shape Analysis of Highly N‐Type
Doped Zincblende GaN.” Physica Status Solidi (B), 1900522, 2020, doi:10.1002/pssb.201900522.
short: E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi
(B) (2020).
date_created: 2021-09-07T09:17:31Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201900522
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '23841'
article_number: '1900532'
author:
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Tobias
full_name: Henksmeier, Tobias
last_name: Henksmeier
- first_name: Jürgen W.
full_name: Gerlach, Jürgen W.
last_name: Gerlach
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy
Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532
apa: Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2020).
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900532
bibtex: '@article{Deppe_Henksmeier_Gerlach_Reuter_As_2020, title={Molecular Beam
Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N}, DOI={10.1002/pssb.201900532},
number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael
and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef},
year={2020} }'
chicago: Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and
Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped
Cubic Al x Ga 1−
x N.” Physica Status Solidi (B),
2020. https://doi.org/10.1002/pssb.201900532.
ieee: M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular
Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N,” physica status solidi (b), 2020.
mla: Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization
of Germanium‐Doped Cubic Al x
Ga 1− x N.” Physica
Status Solidi (B), 1900532, 2020, doi:10.1002/pssb.201900532.
short: M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status
Solidi (B) (2020).
date_created: 2021-09-07T09:18:26Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201900532
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic
Al x Ga 1− x N
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '23831'
author:
- first_name: Elias
full_name: Baron, Elias
last_name: Baron
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
citation:
ama: Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron
concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical
Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603
apa: Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2019). Influence
of the free-electron concentration on the optical properties of zincblende GaN
up to 1×1020cm−3. Physical Review Materials. https://doi.org/10.1103/physrevmaterials.3.104603
bibtex: '@article{Baron_Goldhahn_Deppe_As_Feneberg_2019, title={Influence of the
free-electron concentration on the optical properties of zincblende GaN up to
1×1020cm−3}, DOI={10.1103/physrevmaterials.3.104603},
journal={Physical Review Materials}, author={Baron, Elias and Goldhahn, Rüdiger
and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2019} }'
chicago: Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin
Feneberg. “Influence of the Free-Electron Concentration on the Optical Properties
of Zincblende GaN up to 1×1020cm−3.” Physical Review Materials, 2019. https://doi.org/10.1103/physrevmaterials.3.104603.
ieee: E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of
the free-electron concentration on the optical properties of zincblende GaN up
to 1×1020cm−3,” Physical Review Materials, 2019.
mla: Baron, Elias, et al. “Influence of the Free-Electron Concentration on the Optical
Properties of Zincblende GaN up to 1×1020cm−3.” Physical Review Materials,
2019, doi:10.1103/physrevmaterials.3.104603.
short: E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials
(2019).
date_created: 2021-09-07T08:40:08Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1103/physrevmaterials.3.104603
language:
- iso: eng
publication: Physical Review Materials
publication_identifier:
issn:
- 2475-9953
publication_status: published
status: public
title: Influence of the free-electron concentration on the optical properties of zincblende
GaN up to 1×1020cm−3
type: journal_article
user_id: '14'
year: '2019'
...
---
_id: '8646'
article_number: '095703'
author:
- first_name: M.
full_name: Deppe, M.
last_name: Deppe
- first_name: J. W.
full_name: Gerlach, J. W.
last_name: Gerlach
- first_name: S.
full_name: Shvarkov, S.
last_name: Shvarkov
- first_name: D.
full_name: Rogalla, D.
last_name: Rogalla
- first_name: H.-W.
full_name: Becker, H.-W.
last_name: Becker
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown
by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095
apa: Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter,
D., & As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam
epitaxy. Journal of Applied Physics. https://doi.org/10.1063/1.5066095
bibtex: '@article{Deppe_Gerlach_Shvarkov_Rogalla_Becker_Reuter_As_2019, title={Germanium
doping of cubic GaN grown by molecular beam epitaxy}, DOI={10.1063/1.5066095},
number={095703}, journal={Journal of Applied Physics}, author={Deppe, M. and Gerlach,
J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and
As, Donat Josef}, year={2019} }'
chicago: Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter,
and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.”
Journal of Applied Physics, 2019. https://doi.org/10.1063/1.5066095.
ieee: M. Deppe et al., “Germanium doping of cubic GaN grown by molecular
beam epitaxy,” Journal of Applied Physics, 2019.
mla: Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.”
Journal of Applied Physics, 095703, 2019, doi:10.1063/1.5066095.
short: M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter,
D.J. As, Journal of Applied Physics (2019).
date_created: 2019-03-26T12:48:57Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '230'
- _id: '429'
doi: 10.1063/1.5066095
language:
- iso: eng
project:
- _id: '67'
name: TRR 142 - Subproject B2
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Germanium doping of cubic GaN grown by molecular beam epitaxy
type: journal_article
user_id: '14'
year: '2019'
...
---
_id: '13965'
article_number: '153901'
author:
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
citation:
ama: Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence
of spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2019. doi:10.1063/1.5123914
apa: Buß, J. H., Schupp, T., As, D. J., Hägele, D., & Rudolph, J. (2019). Optical
excitation density dependence of spin dynamics in bulk cubic GaN. Journal of
Applied Physics. https://doi.org/10.1063/1.5123914
bibtex: '@article{Buß_Schupp_As_Hägele_Rudolph_2019, title={Optical excitation density
dependence of spin dynamics in bulk cubic GaN}, DOI={10.1063/1.5123914},
number={153901}, journal={Journal of Applied Physics}, author={Buß, J. H. and
Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2019} }'
chicago: Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Optical
Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” Journal
of Applied Physics, 2019. https://doi.org/10.1063/1.5123914.
ieee: J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation
density dependence of spin dynamics in bulk cubic GaN,” Journal of Applied
Physics, 2019.
mla: Buß, J. H., et al. “Optical Excitation Density Dependence of Spin Dynamics
in Bulk Cubic GaN.” Journal of Applied Physics, 153901, 2019, doi:10.1063/1.5123914.
short: J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics
(2019).
date_created: 2019-10-22T12:26:02Z
date_updated: 2022-01-06T06:51:48Z
department:
- _id: '230'
- _id: '429'
doi: 10.1063/1.5123914
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Optical excitation density dependence of spin dynamics in bulk cubic GaN
type: journal_article
user_id: '14'
year: '2019'
...
---
_id: '13966'
author:
- first_name: Elias
full_name: Baron, Elias
last_name: Baron
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
citation:
ama: Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron
concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical
Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603
apa: Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2019). Influence
of the free-electron concentration on the optical properties of zincblende GaN
up to 1×1020cm−3. Physical Review Materials. https://doi.org/10.1103/physrevmaterials.3.104603
bibtex: '@article{Baron_Goldhahn_Deppe_As_Feneberg_2019, title={Influence of the
free-electron concentration on the optical properties of zincblende GaN up to
1×1020cm−3}, DOI={10.1103/physrevmaterials.3.104603},
journal={Physical Review Materials}, author={Baron, Elias and Goldhahn, Rüdiger
and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2019} }'
chicago: Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin
Feneberg. “Influence of the Free-Electron Concentration on the Optical Properties
of Zincblende GaN up to 1×1020cm−3.” Physical Review Materials, 2019. https://doi.org/10.1103/physrevmaterials.3.104603.
ieee: E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of
the free-electron concentration on the optical properties of zincblende GaN up
to 1×1020cm−3,” Physical Review Materials, 2019.
mla: Baron, Elias, et al. “Influence of the Free-Electron Concentration on the Optical
Properties of Zincblende GaN up to 1×1020cm−3.” Physical Review Materials,
2019, doi:10.1103/physrevmaterials.3.104603.
short: E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials
(2019).
date_created: 2019-10-22T12:27:30Z
date_updated: 2022-01-06T06:51:48Z
department:
- _id: '230'
- _id: '429'
doi: 10.1103/physrevmaterials.3.104603
language:
- iso: eng
publication: Physical Review Materials
publication_identifier:
issn:
- 2475-9953
publication_status: published
status: public
title: Influence of the free-electron concentration on the optical properties of zincblende
GaN up to 1×1020cm−3
type: journal_article
user_id: '14'
year: '2019'
...
---
_id: '15444'
article_number: '1900532'
author:
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Tobias
full_name: Henksmeier, Tobias
last_name: Henksmeier
- first_name: Jürgen W.
full_name: Gerlach, Jürgen W.
last_name: Gerlach
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy
Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N. physica status solidi (b). Published online 2019. doi:10.1002/pssb.201900532
apa: Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2019).
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N. Physica Status Solidi (b), Article
1900532. https://doi.org/10.1002/pssb.201900532
bibtex: '@article{Deppe_Henksmeier_Gerlach_Reuter_As_2019, title={Molecular Beam
Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N}, DOI={10.1002/pssb.201900532},
number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael
and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat J.},
year={2019} }'
chicago: Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and
Donat J. As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped
Cubic Al x Ga 1−
x N.” Physica Status Solidi (b),
2019. https://doi.org/10.1002/pssb.201900532.
ieee: 'M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular
Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N,” physica status solidi (b), Art. no. 1900532,
2019, doi: 10.1002/pssb.201900532.'
mla: Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization
of Germanium‐Doped Cubic Al x
Ga 1− x N.” Physica
Status Solidi (b), 1900532, 2019, doi:10.1002/pssb.201900532.
short: M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status
Solidi (b) (2019).
date_created: 2020-01-07T10:09:27Z
date_updated: 2023-10-09T09:03:47Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.201900532
language:
- iso: eng
main_file_link:
- open_access: '1'
oa: '1'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic
Al x Ga 1− x N
type: journal_article
user_id: '14931'
year: '2019'
...
---
_id: '4809'
author:
- first_name: Leonilson K.S.
full_name: Herval, Leonilson K.S.
last_name: Herval
- first_name: Marcio P.F.
full_name: de Godoy, Marcio P.F.
last_name: de Godoy
- first_name: Tobias
full_name: Wecker, Tobias
last_name: Wecker
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Herval LKS, de Godoy MPF, Wecker T, As DJ. Investigation on interface-related
defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures.
Journal of Luminescence. 2018;198:309-313. doi:10.1016/j.jlumin.2018.02.051
apa: Herval, L. K. S., de Godoy, M. P. F., Wecker, T., & As, D. J. (2018). Investigation
on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum
wells structures. Journal of Luminescence, 198, 309–313. https://doi.org/10.1016/j.jlumin.2018.02.051
bibtex: '@article{Herval_de Godoy_Wecker_As_2018, title={Investigation on interface-related
defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures},
volume={198}, DOI={10.1016/j.jlumin.2018.02.051},
journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herval, Leonilson
K.S. and de Godoy, Marcio P.F. and Wecker, Tobias and As, Donat Josef}, year={2018},
pages={309–313} }'
chicago: 'Herval, Leonilson K.S., Marcio P.F. de Godoy, Tobias Wecker, and Donat
Josef As. “Investigation on Interface-Related Defects by Photoluminescence of
Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” Journal of Luminescence
198 (2018): 309–13. https://doi.org/10.1016/j.jlumin.2018.02.051.'
ieee: L. K. S. Herval, M. P. F. de Godoy, T. Wecker, and D. J. As, “Investigation
on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum
wells structures,” Journal of Luminescence, vol. 198, pp. 309–313, 2018.
mla: Herval, Leonilson K. S., et al. “Investigation on Interface-Related Defects
by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” Journal
of Luminescence, vol. 198, Elsevier BV, 2018, pp. 309–13, doi:10.1016/j.jlumin.2018.02.051.
short: L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence
198 (2018) 309–313.
date_created: 2018-10-24T08:00:01Z
date_updated: 2022-01-06T07:01:24Z
doi: 10.1016/j.jlumin.2018.02.051
intvolume: ' 198'
page: 309-313
publication: Journal of Luminescence
publication_identifier:
issn:
- 0022-2313
publication_status: published
publisher: Elsevier BV
status: public
title: Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN
multi-quantum wells structures
type: journal_article
user_id: '14'
volume: 198
year: '2018'
...
---
_id: '7022'
article_number: '1700457'
author:
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots
Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5).
doi:10.1002/pssb.201700457
apa: Blumenthal, S., Reuter, D., & As, D. J. (2018). Optical Properties of Cubic
GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (B),
255(5). https://doi.org/10.1002/pssb.201700457
bibtex: '@article{Blumenthal_Reuter_As_2018, title={Optical Properties of Cubic
GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={10.1002/pssb.201700457},
number={51700457}, journal={physica status solidi (b)}, publisher={Wiley}, author={Blumenthal,
Sarah and Reuter, Dirk and As, Donat Josef}, year={2018} }'
chicago: Blumenthal, Sarah, Dirk Reuter, and Donat Josef As. “Optical Properties
of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status
Solidi (B) 255, no. 5 (2018). https://doi.org/10.1002/pssb.201700457.
ieee: S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum
Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol.
255, no. 5, 2018.
mla: Blumenthal, Sarah, et al. “Optical Properties of Cubic GaN Quantum Dots Grown
by Molecular Beam Epitaxy.” Physica Status Solidi (B), vol. 255, no. 5,
1700457, Wiley, 2018, doi:10.1002/pssb.201700457.
short: S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
date_created: 2019-01-28T09:40:01Z
date_updated: 2022-01-06T07:03:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.201700457
intvolume: ' 255'
issue: '5'
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
type: journal_article
user_id: '42514'
volume: 255
year: '2018'
...
---
_id: '4350'
author:
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Klaus
full_name: Lischka, Klaus
last_name: Lischka
citation:
ama: 'As DJ, Lischka K. Nonpolar Cubic III-nitrides: From the Basics of Growth to
Device Applications. In: Molecular Beam Epitaxy. Elsevier; 2018:95-114.
doi:10.1016/b978-0-12-812136-8.00006-2'
apa: 'As, D. J., & Lischka, K. (2018). Nonpolar Cubic III-nitrides: From the
Basics of Growth to Device Applications. In Molecular Beam Epitaxy (pp.
95–114). Elsevier. https://doi.org/10.1016/b978-0-12-812136-8.00006-2'
bibtex: '@inbook{As_Lischka_2018, title={Nonpolar Cubic III-nitrides: From the Basics
of Growth to Device Applications}, DOI={10.1016/b978-0-12-812136-8.00006-2},
booktitle={Molecular Beam Epitaxy}, publisher={Elsevier}, author={As, Donat Josef
and Lischka, Klaus}, year={2018}, pages={95–114} }'
chicago: 'As, Donat Josef, and Klaus Lischka. “Nonpolar Cubic III-Nitrides: From
the Basics of Growth to Device Applications.” In Molecular Beam Epitaxy,
95–114. Elsevier, 2018. https://doi.org/10.1016/b978-0-12-812136-8.00006-2.'
ieee: 'D. J. As and K. Lischka, “Nonpolar Cubic III-nitrides: From the Basics of
Growth to Device Applications,” in Molecular Beam Epitaxy, Elsevier, 2018,
pp. 95–114.'
mla: 'As, Donat Josef, and Klaus Lischka. “Nonpolar Cubic III-Nitrides: From the
Basics of Growth to Device Applications.” Molecular Beam Epitaxy, Elsevier,
2018, pp. 95–114, doi:10.1016/b978-0-12-812136-8.00006-2.'
short: 'D.J. As, K. Lischka, in: Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.'
date_created: 2018-09-04T13:11:48Z
date_updated: 2022-01-06T07:00:58Z
doi: 10.1016/b978-0-12-812136-8.00006-2
page: 95-114
publication: Molecular Beam Epitaxy
publication_identifier:
isbn:
- '9780128121368'
publication_status: published
publisher: Elsevier
status: public
title: 'Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications'
type: book_chapter
user_id: '14'
year: '2018'
...
---
_id: '20588'
abstract:
- lang: eng
text: We have investigated the stacking of self-assembled cubic GaN quantum dots
(QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers
is varied to compare their optical properties. The growth is in situ controlled
by reflection high energy electron diffraction to prove the SK QD growth. Atomic
force and transmission electron microscopy show the existence of wetting layer
and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have
a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence
measurements show an increase of the intensity with increasing number of stacked
QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing
number of stacked QD layers. This blueshift derives from a decrease in the QD
height, because the QD height has also been the main confining dimension in our
QDs.
article_type: original
author:
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Torsten
full_name: Rieger, Torsten
last_name: Rieger
- first_name: Doris
full_name: Meertens, Doris
last_name: Meertens
- first_name: Alexander
full_name: Pawlis, Alexander
last_name: Pawlis
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled
Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi
(b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729
apa: Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., & As,
D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular
Beam Epitaxy. Physica Status Solidi (b), 255(3), 1600729. https://doi.org/10.1002/pssb.201600729
bibtex: '@article{Blumenthal_Rieger_Meertens_Pawlis_Reuter_As_2018, title={Stacked
Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255},
DOI={https://doi.org/10.1002/pssb.201600729},
number={3}, journal={physica status solidi (b)}, author={Blumenthal, Sarah and
Rieger, Torsten and Meertens, Doris and Pawlis, Alexander and Reuter, Dirk and
As, Donat Josef}, year={2018}, pages={1600729} }'
chicago: 'Blumenthal, Sarah, Torsten Rieger, Doris Meertens, Alexander Pawlis, Dirk
Reuter, and Donat Josef As. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown
by Molecular Beam Epitaxy.” Physica Status Solidi (b) 255, no. 3 (2018):
1600729. https://doi.org/10.1002/pssb.201600729.'
ieee: 'S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As,
“Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,”
physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi: https://doi.org/10.1002/pssb.201600729.'
mla: Blumenthal, Sarah, et al. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown
by Molecular Beam Epitaxy.” Physica Status Solidi (b), vol. 255, no. 3,
2018, p. 1600729, doi:https://doi.org/10.1002/pssb.201600729.
short: S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica
Status Solidi (b) 255 (2018) 1600729.
date_created: 2020-12-02T09:38:00Z
date_updated: 2023-10-09T09:19:40Z
department:
- _id: '230'
- _id: '429'
doi: https://doi.org/10.1002/pssb.201600729
intvolume: ' 255'
issue: '3'
keyword:
- cubic crystals
- GaN
- molecular beam epitaxy
- quantum dots
language:
- iso: eng
page: '1600729'
project:
- _id: '53'
grant_number: '231447078'
name: TRR 142
- _id: '54'
name: TRR 142 - Project Area A
- _id: '63'
grant_number: '231447078'
name: TRR 142 - Subproject A6
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
status: public
title: Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
type: journal_article
user_id: '14931'
volume: 255
year: '2018'
...
---
_id: '4808'
article_number: '1700373'
author:
- first_name: Tobias
full_name: Wecker, Tobias
last_name: Wecker
- first_name: Gordon
full_name: Callsen, Gordon
last_name: Callsen
- first_name: Axel
full_name: Hoffmann, Axel
last_name: Hoffmann
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier
Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double
Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373
apa: Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., & As, D. J. (2017).
Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic
GaN/Al0.64Ga0.36N Double Quantum Wells. Physica Status Solidi (B), 255(5).
https://doi.org/10.1002/pssb.201700373
bibtex: '@article{Wecker_Callsen_Hoffmann_Reuter_As_2017, title={Correlation of
the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N
Double Quantum Wells}, volume={255}, DOI={10.1002/pssb.201700373},
number={51700373}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker,
Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef},
year={2017} }'
chicago: Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef
As. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric
Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status Solidi (B)
255, no. 5 (2017). https://doi.org/10.1002/pssb.201700373.
ieee: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation
of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N
Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017.
mla: Wecker, Tobias, et al. “Correlation of the Carrier Decay Time and Barrier Thickness
for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status
Solidi (B), vol. 255, no. 5, 1700373, Wiley, 2017, doi:10.1002/pssb.201700373.
short: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi
(B) 255 (2017).
date_created: 2018-10-24T07:59:23Z
date_updated: 2022-01-06T07:01:24Z
doi: 10.1002/pssb.201700373
intvolume: ' 255'
issue: '5'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric
Cubic GaN/Al0.64Ga0.36N Double Quantum Wells
type: journal_article
user_id: '14'
volume: 255
year: '2017'
...