@article{671,
  author       = {{Förstner, Jens and Weber, C. and Danckwerts, J. and Knorr, A.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  keywords     = {{tet_topic_qd}},
  number       = {{12}},
  pages        = {{127401}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Phonon-Assisted Damping of Rabi Oscillations in Semiconductor Quantum Dots}}},
  doi          = {{10.1103/physrevlett.91.127401}},
  volume       = {{91}},
  year         = {{2003}},
}

@article{4300,
  abstract     = {{The occurrence of non-Lorentzian lineshapes is analyzed for a variety of nanooptical semiconductor
systems such as quantum wells and quantum dots. Their origin is traced back to light–matter
interaction (light propagation) and many-particle correlations (electron–electron and electron–
phonon interaction).}},
  author       = {{Förstner, Jens and Ahn, K.J. and Danckwerts, J. and Schaarschmidt, M. and Waldmüller, I. and Weber, C. and Knorr, A.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{tet_topic_polariton}},
  number       = {{1}},
  pages        = {{155--165}},
  publisher    = {{Wiley}},
  title        = {{{Light Propagation- and Many-particle-induced Non-Lorentzian Lineshapes in Semiconductor Nanooptics}}},
  doi          = {{10.1002/1521-3951(200211)234:1<155::aid-pssb155>3.0.co;2-r}},
  volume       = {{234}},
  year         = {{2002}},
}

@inproceedings{4305,
  abstract     = {{On the basis of a density matrix approach including electron-electron scattering, a detailed analysis of the temporal dynamics and the dephasing process after optical excitation in intersubband emitters is presented for a wide range of parameters. }},
  author       = {{Waldmüller, Ines and Förstner, Jens and Knorr, Andreas}},
  booktitle    = {{Nonlinear Optics: Materials, Fundamentals and Applications}},
  isbn         = {{1557527210}},
  keywords     = {{tet_topic_qw}},
  publisher    = {{OSA}},
  title        = {{{Theory of ultrafast dynamics and lineshape of semiconductor quantum well intersubband emitters}}},
  doi          = {{10.1364/nlo.2002.we34}},
  year         = {{2002}},
}

@article{4306,
  abstract     = {{The coherent exciton-light coupling in pulse propagation experiments on the A-exciton resonance in bulk
CdSe is investigated over a broad intensity range. At low light intensities, polariton propagation beats due to
interference between excited states on both polariton branches are observed. In an intermediate intensity
regime, the temporal polariton beating is suppressed in consequence of exciton-exciton interaction. At the
highest light intensities, self-induced transmission and multiple pulse breakup are identified as a signature for
carrier density Rabi flopping. Exciton-phonon scattering is shown to gradually eliminate coherent nonlinear
propagation effects due to enhanced dephasing of the excitonic polarization. Calculations using the semiconductor
Maxwell-Bloch equations are in qualitative agreement with the experimental data.}},
  author       = {{Nielsen, N. C. and Linden, S. and Kuhl, J. and Förstner, Jens and Knorr, A. and Koch, S. W. and Giessen, H.}},
  issn         = {{0163-1829}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_polariton}},
  number       = {{24}},
  pages        = {{245202--245202--10}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Coherent nonlinear pulse propagation on a free-exciton resonance in a semiconductor}}},
  doi          = {{10.1103/physrevb.64.245202}},
  volume       = {{64}},
  year         = {{2002}},
}

@article{4308,
  abstract     = {{Features reminiscent of spectral hole burning in a homogeneous line are predicted to result from the
interaction of small area pulses with the semiconductor exciton resonance. The small area pulses may
be designed through pulse shaping or evolve naturally in bulk semiconductors via polaritonic effects.
The spectral features exhibit signatures that are characteristic for the underlying material nonlinearity
and should occur in any system with isolated spectral resonances and coherent nonlinearities.}},
  author       = {{Förstner, Jens and Knorr, A. and Koch, S. W.}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  keywords     = {{tet_topic_polariton}},
  number       = {{3}},
  pages        = {{476--479}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Nonlinear Pulse Propagation in Semiconductors: Hole Burning within a Homogeneous Line}}},
  doi          = {{10.1103/physrevlett.86.476}},
  volume       = {{86}},
  year         = {{2002}},
}

@article{4310,
  abstract     = {{Nonlinear propagation of optical pulses through an extended bulk semiconductor is investigated using the coupled semiconductor Maxwell‐Bloch equations including excitation induced correlations. For short pulse excitation around the exciton resonance, the theory describes the development of polariton beats and their suppression at increasing input pulse intensities due to the coupling of single exciton states to the Coulomb‐correlated continuum of two‐exciton states. A comparison of the theoretical results with experimental observations for CdSe bulk material is presented.}},
  author       = {{Förstner, Jens and Knorr, A. and Kuckenburg, S. and Meier, Torsten and Koch, S.W. and Giessen, H. and Linden, S. and Kuhl, J.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{tet_topic_polariton}},
  number       = {{1}},
  pages        = {{453--457}},
  publisher    = {{Wiley}},
  title        = {{{Nonlinear Polariton Pulse Propagation in Bulk Semiconductors}}},
  doi          = {{10.1002/1521-3951(200009)221:1<453::aid-pssb453>3.0.co;2-q}},
  volume       = {{221}},
  year         = {{2002}},
}