@inproceedings{39573,
  author       = {{Scholz, P. and Dierkes, M. and Hilleringmann, Ulrich}},
  booktitle    = {{2006 IEEE Ultrasonics Symposium}},
  publisher    = {{IEEE}},
  title        = {{{6I-3 Low-Cost Transceiver Unit for SAW-Sensors Using Customized Hardware Components}}},
  doi          = {{10.1109/ultsym.2006.223}},
  year         = {{2007}},
}

@inproceedings{39842,
  author       = {{Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich and Schurmann, U. and Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F.}},
  booktitle    = {{Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics}},
  publisher    = {{IEEE}},
  title        = {{{Encapsulating the active Layer of organic Thin-Film Transistors}}},
  doi          = {{10.1109/polytr.2005.1596488}},
  year         = {{2006}},
}

@article{39846,
  abstract     = {{<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>}},
  author       = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
  issn         = {{0884-2914}},
  journal      = {{Journal of Materials Research}},
  keywords     = {{Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science}},
  number       = {{7}},
  pages        = {{1999--2002}},
  publisher    = {{Springer Science and Business Media LLC}},
  title        = {{{Degradation of organic field-effect transistors made of pentacene}}},
  doi          = {{10.1557/jmr.2004.0267}},
  volume       = {{19}},
  year         = {{2005}},
}

@inproceedings{39848,
  author       = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
  booktitle    = {{Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.}},
  publisher    = {{IEEE}},
  title        = {{{On the degradation of organic field-effect transistors}}},
  doi          = {{10.1109/icm.2004.1434210}},
  year         = {{2005}},
}

@article{39349,
  abstract     = {{<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>}},
  author       = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
  issn         = {{0884-2914}},
  journal      = {{Journal of Materials Research}},
  keywords     = {{Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science}},
  number       = {{7}},
  pages        = {{1999--2002}},
  publisher    = {{Springer Science and Business Media LLC}},
  title        = {{{Degradation of organic field-effect transistors made of pentacene}}},
  doi          = {{10.1557/jmr.2004.0267}},
  volume       = {{19}},
  year         = {{2005}},
}

@article{39574,
  author       = {{Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  keywords     = {{Physics and Astronomy (miscellaneous)}},
  number       = {{2}},
  publisher    = {{AIP Publishing}},
  title        = {{{Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}}},
  doi          = {{10.1063/1.1849845}},
  volume       = {{86}},
  year         = {{2005}},
}

@inproceedings{39835,
  author       = {{Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}},
  booktitle    = {{SPIE Proceedings}},
  editor       = {{Bao, Zhenan and Gundlach, David J.}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}}},
  doi          = {{10.1117/12.617004}},
  year         = {{2005}},
}

@inproceedings{39834,
  author       = {{Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}},
  booktitle    = {{SPIE Proceedings}},
  editor       = {{Bao, Zhenan and Gundlach, David J.}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}}},
  doi          = {{10.1117/12.617004}},
  year         = {{2005}},
}

@inbook{39850,
  abstract     = {{In der Halbleitertechnologie werden die Materialien Siliziumdioxid, Siliziumnitrid, Polysilizium, Silizium, Aluminium sowie Wolfram und Titan mit ihren jeweiligen Metallsiliziden geätzt. Die Ätztechnik dient dabei zum ganzflächigen Abtragen eines Materials oder zum Übertragen der Struktur des lithografisch erzeugten Lackmusters in die darunter liegende Schicht. Für diese Aufgabe bieten sich einerseits nasschemische Ätzlösungen an, zum anderen eignen sich speziell entwickelte Trockenätzverfahren zur geforderten präzisen Strukturübertragung vom Lack in das Material.}},
  author       = {{Hilleringmann, Ulrich}},
  booktitle    = {{Silizium-Halbleitertechnologie}},
  isbn         = {{978-3-322-94072-8}},
  pages        = {{65–90}},
  publisher    = {{Vieweg+Teubner Verlag}},
  title        = {{{Ätztechnik}}},
  doi          = {{10.1007/978-3-322-94072-8_5}},
  year         = {{2004}},
}

@inproceedings{39872,
  author       = {{Hilleringmann, Ulrich and Pannemann, C.}},
  booktitle    = {{Fifth International Symposium on Instrumentation and Control Technology}},
  editor       = {{Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Imprint structured organic thin film transistors as driving circuit in single-use sensor applications}}},
  doi          = {{10.1117/12.521463}},
  year         = {{2004}},
}

@inproceedings{39873,
  author       = {{Otterbach, Ralf and Hilleringmann, Ulrich}},
  booktitle    = {{Fifth International Symposium on Instrumentation and Control Technology}},
  editor       = {{Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu}},
  issn         = {{0277-786X}},
  publisher    = {{SPIE}},
  title        = {{{Piezoresistive pressure sensors in CVD diamond for high-temperature applications}}},
  doi          = {{10.1117/12.521928}},
  year         = {{2004}},
}

@inproceedings{39887,
  author       = {{Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}},
  booktitle    = {{IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}},
  publisher    = {{IEEE}},
  title        = {{{Masking and etching of silicon and related materials for geometries down to 25 nm}}},
  doi          = {{10.1109/iecon.1999.822171}},
  year         = {{2003}},
}

@inproceedings{39888,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}},
  booktitle    = {{IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}},
  publisher    = {{IEEE}},
  title        = {{{Matching analysis of NMOS-transistors with a channel length down to 30 nm}}},
  doi          = {{10.1109/iecon.1999.822163}},
  year         = {{2003}},
}

@inproceedings{39885,
  author       = {{Wirth, G. and Hilleringmann, Ulrich and Horstmann, J.T. and Goser, K.}},
  booktitle    = {{IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}},
  publisher    = {{IEEE}},
  title        = {{{Negative differential resistance in ultrashort bulk MOSFETs}}},
  doi          = {{10.1109/iecon.1999.822164}},
  year         = {{2003}},
}

@article{39851,
  author       = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  pages        = {{845--852}},
  publisher    = {{Elsevier BV}},
  title        = {{{Nanometer scale organic thin film transistors with Pentacene}}},
  doi          = {{10.1016/s0167-9317(03)00146-1}},
  volume       = {{67-68}},
  year         = {{2003}},
}

@article{39904,
  author       = {{Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0018-9383}},
  journal      = {{IEEE Transactions on Electron Devices}},
  keywords     = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}},
  number       = {{5}},
  pages        = {{841--846}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip}}},
  doi          = {{10.1109/16.381978}},
  volume       = {{42}},
  year         = {{2002}},
}

@article{39912,
  author       = {{Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{363--366}},
  publisher    = {{Elsevier BV}},
  title        = {{{Characterization of submicron NMOS devices due to visible light emission}}},
  doi          = {{10.1016/0167-9317(93)90092-j}},
  volume       = {{21}},
  year         = {{2002}},
}

@article{39914,
  author       = {{Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{211--214}},
  publisher    = {{Elsevier BV}},
  title        = {{{Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}}},
  doi          = {{10.1016/0167-9317(92)90425-q}},
  volume       = {{19}},
  year         = {{2002}},
}

@article{39906,
  author       = {{Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}},
  issn         = {{0018-9200}},
  journal      = {{IEEE Journal of Solid-State Circuits}},
  keywords     = {{Electrical and Electronic Engineering}},
  number       = {{8}},
  pages        = {{1006--1010}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{System integration of optical devices and analog CMOS amplifiers}}},
  doi          = {{10.1109/4.297714}},
  volume       = {{29}},
  year         = {{2002}},
}

@article{39907,
  author       = {{Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}},
  issn         = {{0018-9200}},
  journal      = {{IEEE Journal of Solid-State Circuits}},
  keywords     = {{Electrical and Electronic Engineering}},
  number       = {{8}},
  pages        = {{1006--1010}},
  publisher    = {{Institute of Electrical and Electronics Engineers (IEEE)}},
  title        = {{{System integration of optical devices and analog CMOS amplifiers}}},
  doi          = {{10.1109/4.297714}},
  volume       = {{29}},
  year         = {{2002}},
}