@article{39899, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{431--434}}, publisher = {{Elsevier BV}}, title = {{{Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}}}, doi = {{10.1016/0167-9317(95)00280-4}}, volume = {{30}}, year = {{2002}}, } @article{39925, author = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}}, issn = {{0272-1732}}, journal = {{IEEE Micro}}, keywords = {{Electrical and Electronic Engineering, Hardware and Architecture, Software}}, number = {{6}}, pages = {{28--44}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{VLSI technologies for artificial neural networks}}}, doi = {{10.1109/40.42985}}, volume = {{9}}, year = {{2002}}, } @article{39882, author = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{525--528}}, publisher = {{Elsevier BV}}, title = {{{A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}}}, doi = {{10.1016/s0167-9317(00)00370-1}}, volume = {{53}}, year = {{2002}}, } @article{39879, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{213--216}}, publisher = {{Elsevier BV}}, title = {{{1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}}}, doi = {{10.1016/s0167-9317(00)00299-9}}, volume = {{53}}, year = {{2002}}, } @inproceedings{39880, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}}, booktitle = {{2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}}, publisher = {{IEEE}}, title = {{{Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}}}, doi = {{10.1109/iecon.2000.972560}}, year = {{2002}}, } @inproceedings{39881, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}}, booktitle = {{2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}}, publisher = {{IEEE}}, title = {{{Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}}}, doi = {{10.1109/iecon.2000.972560}}, year = {{2002}}, } @article{39919, author = {{Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{289--292}}, publisher = {{Elsevier BV}}, title = {{{A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}}}, doi = {{10.1016/0167-9317(91)90231-2}}, volume = {{15}}, year = {{2002}}, } @article{39926, author = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}}, issn = {{0272-1732}}, journal = {{IEEE Micro}}, keywords = {{Electrical and Electronic Engineering, Hardware and Architecture, Software}}, number = {{6}}, pages = {{28--44}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{VLSI technologies for artificial neural networks}}}, doi = {{10.1109/40.42985}}, volume = {{9}}, year = {{2002}}, } @inproceedings{39892, author = {{Blum, F. and Denisenko, A. and Job, R. and Borchert, D. and Weber, W. and Borany, J.V. and Hilleringmann, Ulrich and Fahrner, W.R.}}, booktitle = {{IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)}}, publisher = {{IEEE}}, title = {{{Nuclear radiation detectors on various type diamonds}}}, doi = {{10.1109/iecon.1998.724097}}, year = {{2002}}, } @article{39920, author = {{Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{633--636}}, publisher = {{Elsevier BV}}, title = {{{Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}}}, doi = {{10.1016/0167-9317(91)90299-s}}, volume = {{15}}, year = {{2002}}, } @article{39915, author = {{Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{211--214}}, publisher = {{Elsevier BV}}, title = {{{Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}}}, doi = {{10.1016/0167-9317(92)90425-q}}, volume = {{19}}, year = {{2002}}, } @article{39916, author = {{Adams, S. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{191--194}}, publisher = {{Elsevier BV}}, title = {{{CMOS compatible micromachining by dry silicon-etching techniques}}}, doi = {{10.1016/0167-9317(92)90420-v}}, volume = {{19}}, year = {{2002}}, } @article{39348, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}}, issn = {{0018-9383}}, journal = {{IEEE Transactions on Electron Devices}}, keywords = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}}, number = {{1}}, pages = {{299--306}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Matching analysis of deposition defined 50-nm MOSFET's}}}, doi = {{10.1109/16.658845}}, volume = {{45}}, year = {{2002}}, } @inproceedings{39923, author = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U.}}, booktitle = {{[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications}}, publisher = {{IEEE Comput. Soc. Press}}, title = {{{Applications and implementations of neural networks in microelectronics-overview and status}}}, doi = {{10.1109/cmpeur.1991.257442}}, year = {{2002}}, } @article{39889, author = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{413--417}}, publisher = {{Elsevier BV}}, title = {{{12 kV low current cascaded light triggered switch on one silicon chip}}}, doi = {{10.1016/s0167-9317(99)00122-7}}, volume = {{46}}, year = {{2002}}, } @article{39891, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}}, issn = {{0018-9383}}, journal = {{IEEE Transactions on Electron Devices}}, keywords = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}}, number = {{1}}, pages = {{299--306}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Matching analysis of deposition defined 50-nm MOSFET's}}}, doi = {{10.1109/16.658845}}, volume = {{45}}, year = {{2002}}, } @article{39886, author = {{Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}}, issn = {{0038-1101}}, journal = {{Solid-State Electronics}}, keywords = {{Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, number = {{7}}, pages = {{1245--1250}}, publisher = {{Elsevier BV}}, title = {{{Mesoscopic transport phenomena in ultrashort channel MOSFETs}}}, doi = {{10.1016/s0038-1101(99)00060-x}}, volume = {{43}}, year = {{2002}}, } @article{39876, author = {{Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}}, issn = {{0925-9635}}, journal = {{Diamond and Related Materials}}, keywords = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}}, number = {{3-7}}, pages = {{511--514}}, publisher = {{Elsevier BV}}, title = {{{Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}}}, doi = {{10.1016/s0925-9635(01)00373-9}}, volume = {{10}}, year = {{2002}}, } @article{39877, author = {{Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{569--572}}, publisher = {{Elsevier BV}}, title = {{{A structure definition technique for 25 nm lines of silicon and related materials}}}, doi = {{10.1016/s0167-9317(00)00380-4}}, volume = {{53}}, year = {{2002}}, } @article{39874, author = {{Otterbach, R. and Hilleringmann, Ulrich}}, issn = {{0925-9635}}, journal = {{Diamond and Related Materials}}, keywords = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}}, number = {{3-6}}, pages = {{841--844}}, publisher = {{Elsevier BV}}, title = {{{Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}}}, doi = {{10.1016/s0925-9635(01)00703-8}}, volume = {{11}}, year = {{2002}}, }