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(2007). 6I-3 Low-Cost Transceiver Unit for SAW-Sensors Using Customized Hardware Components. <i>2006 IEEE Ultrasonics Symposium</i>. <a href=\"https://doi.org/10.1109/ultsym.2006.223\">https://doi.org/10.1109/ultsym.2006.223</a>","short":"P. Scholz, M. Dierkes, U. 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Encapsulating the active Layer of organic Thin-Film Transistors. In: <i>Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics</i>. IEEE; 2006. doi:<a href=\"https://doi.org/10.1109/polytr.2005.1596488\">10.1109/polytr.2005.1596488</a>","chicago":"Pannemann, C., T. Diekmann, Ulrich Hilleringmann, U. Schurmann, M. Scharnberg, V. Zaporojtchenko, R. Adelung, and F. Faupel. “Encapsulating the Active Layer of Organic Thin-Film Transistors.” In <i>Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics</i>. IEEE, 2006. <a href=\"https://doi.org/10.1109/polytr.2005.1596488\">https://doi.org/10.1109/polytr.2005.1596488</a>.","ieee":"C. Pannemann <i>et al.</i>, “Encapsulating the active Layer of organic Thin-Film Transistors,” 2006, doi: <a href=\"https://doi.org/10.1109/polytr.2005.1596488\">10.1109/polytr.2005.1596488</a>.","bibtex":"@inproceedings{Pannemann_Diekmann_Hilleringmann_Schurmann_Scharnberg_Zaporojtchenko_Adelung_Faupel_2006, title={Encapsulating the active Layer of organic Thin-Film Transistors}, DOI={<a href=\"https://doi.org/10.1109/polytr.2005.1596488\">10.1109/polytr.2005.1596488</a>}, booktitle={Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics}, publisher={IEEE}, author={Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich and Schurmann, U. and Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F.}, year={2006} }","mla":"Pannemann, C., et al. “Encapsulating the Active Layer of Organic Thin-Film Transistors.” <i>Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics</i>, IEEE, 2006, doi:<a href=\"https://doi.org/10.1109/polytr.2005.1596488\">10.1109/polytr.2005.1596488</a>.","short":"C. Pannemann, T. Diekmann, U. Hilleringmann, U. Schurmann, M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, in: Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics, IEEE, 2006.","apa":"Pannemann, C., Diekmann, T., Hilleringmann, U., Schurmann, U., Scharnberg, M., Zaporojtchenko, V., Adelung, R., &#38; Faupel, F. (2006). 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Hilleringmann, Journal of Materials Research 19 (2005) 1999–2002.","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic field-effect transistors made of pentacene}, volume={19}, DOI={<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>}, number={7}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2005}, pages={1999–2002} }","mla":"Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. 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Hilleringmann, “Degradation of organic field-effect transistors made of pentacene,” <i>Journal of Materials Research</i>, vol. 19, no. 7, pp. 1999–2002, 2005, doi: <a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>."},"intvolume":"        19","page":"1999-2002","publication_status":"published","publication_identifier":{"issn":["0884-2914","2044-5326"]},"doi":"10.1557/jmr.2004.0267","date_updated":"2023-03-21T10:06:18Z","author":[{"first_name":"Ch.","last_name":"Pannemann","full_name":"Pannemann, Ch."},{"first_name":"T.","last_name":"Diekmann","full_name":"Diekmann, T."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"}],"volume":19,"status":"public","type":"journal_article","_id":"39846","user_id":"20179","department":[{"_id":"59"}],"year":"2005","issue":"7","title":"Degradation of organic field-effect transistors made of pentacene","publisher":"Springer Science and Business Media LLC","date_created":"2023-01-25T08:37:47Z","abstract":[{"text":"<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>","lang":"eng"}],"publication":"Journal of Materials Research","keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"],"language":[{"iso":"eng"}]},{"publication_status":"published","year":"2005","citation":{"ama":"Pannemann Ch, Diekmann T, Hilleringmann U. On the degradation of organic field-effect transistors. In: <i>Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.</i> IEEE; 2005. doi:<a href=\"https://doi.org/10.1109/icm.2004.1434210\">10.1109/icm.2004.1434210</a>","chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “On the Degradation of Organic Field-Effect Transistors.” In <i>Proceedings. The 16th International Conference on Microelectronics, 2004. 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Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>"}],"publication":"Journal of Materials Research","language":[{"iso":"eng"}],"keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"],"year":"2005","issue":"7","title":"Degradation of organic field-effect transistors made of pentacene","date_created":"2023-01-24T09:24:41Z","publisher":"Springer Science and Business Media LLC","status":"public","type":"journal_article","user_id":"20179","department":[{"_id":"59"}],"_id":"39349","citation":{"ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic field-effect transistors made of pentacene,” <i>Journal of Materials Research</i>, vol. 19, no. 7, pp. 1999–2002, 2005, doi: <a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","chicago":"Pannemann, Ch., T. 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Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>, <i>19</i>(7), 1999–2002. <a href=\"https://doi.org/10.1557/jmr.2004.0267\">https://doi.org/10.1557/jmr.2004.0267</a>","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic field-effect transistors made of pentacene}, volume={19}, DOI={<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>}, number={7}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2005}, pages={1999–2002} }","mla":"Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","short":"Ch. Pannemann, T. Diekmann, U. 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Scharnberg <i>et al.</i>, “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,” <i>Applied Physics Letters</i>, vol. 86, no. 2, Art. no. 024104, 2005, doi: <a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","chicago":"Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i> 86, no. 2 (2005). <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>.","apa":"Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann, C., Hilleringmann, U., Meyer, S., &#38; Pflaum, J. (2005). Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. <i>Applied Physics Letters</i>, <i>86</i>(2), Article 024104. <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>","bibtex":"@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005, title={Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>}, number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}, year={2005} }","mla":"Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i>, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","short":"M. 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Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. <i>SPIE Proceedings</i>. SPIE; 2005. doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>","ieee":"R. Scholz <i>et al.</i>, “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,” in <i>SPIE Proceedings</i>, 2005, doi: <a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","chicago":"Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera, D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” In <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach. 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T. and Pannemann, C. and Hilleringmann, Ulrich}, editor={Bao, Zhenan and Gundlach, David J.}, year={2005} }"},"year":"2005","date_created":"2023-01-25T08:20:11Z","author":[{"last_name":"Scholz","full_name":"Scholz, R.","first_name":"R."},{"full_name":"Müller, A.-D.","last_name":"Müller","first_name":"A.-D."},{"last_name":"Müller","full_name":"Müller, F.","first_name":"F."},{"last_name":"Thurzo","full_name":"Thurzo, I.","first_name":"I."},{"last_name":"Paez","full_name":"Paez, B. A.","first_name":"B. A."},{"first_name":"L.","full_name":"Mancera, L.","last_name":"Mancera"},{"last_name":"Zahn","full_name":"Zahn, D. R. T.","first_name":"D. R. 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Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. <i>SPIE Proceedings</i>. SPIE; 2005. doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>","ieee":"R. Scholz <i>et al.</i>, “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,” in <i>SPIE Proceedings</i>, 2005, doi: <a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","chicago":"Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera, D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” In <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach. 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T."},{"full_name":"Pannemann, C.","last_name":"Pannemann","first_name":"C."},{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"}],"title":"Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry","doi":"10.1117/12.617004"},{"page":"65–90","citation":{"ama":"Hilleringmann U. Ätztechnik. In: <i>Silizium-Halbleitertechnologie</i>. Vieweg+Teubner Verlag; 2004:65–90. doi:<a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">10.1007/978-3-322-94072-8_5</a>","chicago":"Hilleringmann, Ulrich. “Ätztechnik.” In <i>Silizium-Halbleitertechnologie</i>, 65–90. Wiesbaden: Vieweg+Teubner Verlag, 2004. <a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">https://doi.org/10.1007/978-3-322-94072-8_5</a>.","ieee":"U. Hilleringmann, “Ätztechnik,” in <i>Silizium-Halbleitertechnologie</i>, Wiesbaden: Vieweg+Teubner Verlag, 2004, pp. 65–90.","apa":"Hilleringmann, U. (2004). Ätztechnik. In <i>Silizium-Halbleitertechnologie</i> (pp. 65–90). Vieweg+Teubner Verlag. <a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">https://doi.org/10.1007/978-3-322-94072-8_5</a>","mla":"Hilleringmann, Ulrich. “Ätztechnik.” <i>Silizium-Halbleitertechnologie</i>, Vieweg+Teubner Verlag, 2004, pp. 65–90, doi:<a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">10.1007/978-3-322-94072-8_5</a>.","bibtex":"@inbook{Hilleringmann_2004, place={Wiesbaden}, title={Ätztechnik}, DOI={<a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">10.1007/978-3-322-94072-8_5</a>}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2004}, pages={65–90} }","short":"U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2004, pp. 65–90."},"year":"2004","place":"Wiesbaden","publication_identifier":{"isbn":["978-3-322-94072-8"]},"doi":"10.1007/978-3-322-94072-8_5","title":"Ätztechnik","date_created":"2023-01-25T08:39:18Z","author":[{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"}],"date_updated":"2023-03-21T10:05:00Z","publisher":"Vieweg+Teubner Verlag","status":"public","abstract":[{"text":"In der Halbleitertechnologie werden die Materialien Siliziumdioxid, Siliziumnitrid, Polysilizium, Silizium, Aluminium sowie Wolfram und Titan mit ihren jeweiligen Metallsiliziden geätzt. Die Ätztechnik dient dabei zum ganzflächigen Abtragen eines Materials oder zum Übertragen der Struktur des lithografisch erzeugten Lackmusters in die darunter liegende Schicht. Für diese Aufgabe bieten sich einerseits nasschemische Ätzlösungen an, zum anderen eignen sich speziell entwickelte Trockenätzverfahren zur geforderten präzisen Strukturübertragung vom Lack in das Material.","lang":"eng"}],"publication":"Silizium-Halbleitertechnologie","type":"book_chapter","language":[{"iso":"eng"}],"department":[{"_id":"59"}],"user_id":"20179","_id":"39850"},{"_id":"39872","department":[{"_id":"59"}],"user_id":"20179","language":[{"iso":"eng"}],"publication":"Fifth International Symposium on Instrumentation and Control Technology","type":"conference","editor":[{"last_name":"Zhang","full_name":"Zhang, Guangjun","first_name":"Guangjun"},{"first_name":"Huijie","full_name":"Zhao, Huijie","last_name":"Zhao"},{"first_name":"Zhongyu","full_name":"Wang, Zhongyu","last_name":"Wang"}],"status":"public","date_updated":"2023-03-21T10:04:17Z","publisher":"SPIE","date_created":"2023-01-25T09:04:07Z","author":[{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Pannemann","full_name":"Pannemann, C.","first_name":"C."}],"title":"Imprint structured organic thin film transistors as driving circuit in single-use sensor applications","doi":"10.1117/12.521463","publication_identifier":{"issn":["0277-786X"]},"publication_status":"published","year":"2004","citation":{"apa":"Hilleringmann, U., &#38; Pannemann, C. 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