---
_id: '39573'
author:
- first_name: P.
  full_name: Scholz, P.
  last_name: Scholz
- first_name: M.
  full_name: Dierkes, M.
  last_name: Dierkes
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Scholz P, Dierkes M, Hilleringmann U. 6I-3 Low-Cost Transceiver Unit for SAW-Sensors
    Using Customized Hardware Components. In: <i>2006 IEEE Ultrasonics Symposium</i>.
    IEEE; 2007. doi:<a href="https://doi.org/10.1109/ultsym.2006.223">10.1109/ultsym.2006.223</a>'
  apa: Scholz, P., Dierkes, M., &#38; Hilleringmann, U. (2007). 6I-3 Low-Cost Transceiver
    Unit for SAW-Sensors Using Customized Hardware Components. <i>2006 IEEE Ultrasonics
    Symposium</i>. <a href="https://doi.org/10.1109/ultsym.2006.223">https://doi.org/10.1109/ultsym.2006.223</a>
  bibtex: '@inproceedings{Scholz_Dierkes_Hilleringmann_2007, title={6I-3 Low-Cost
    Transceiver Unit for SAW-Sensors Using Customized Hardware Components}, DOI={<a
    href="https://doi.org/10.1109/ultsym.2006.223">10.1109/ultsym.2006.223</a>}, booktitle={2006
    IEEE Ultrasonics Symposium}, publisher={IEEE}, author={Scholz, P. and Dierkes,
    M. and Hilleringmann, Ulrich}, year={2007} }'
  chicago: Scholz, P., M. Dierkes, and Ulrich Hilleringmann. “6I-3 Low-Cost Transceiver
    Unit for SAW-Sensors Using Customized Hardware Components.” In <i>2006 IEEE Ultrasonics
    Symposium</i>. IEEE, 2007. <a href="https://doi.org/10.1109/ultsym.2006.223">https://doi.org/10.1109/ultsym.2006.223</a>.
  ieee: 'P. Scholz, M. Dierkes, and U. Hilleringmann, “6I-3 Low-Cost Transceiver Unit
    for SAW-Sensors Using Customized Hardware Components,” 2007, doi: <a href="https://doi.org/10.1109/ultsym.2006.223">10.1109/ultsym.2006.223</a>.'
  mla: Scholz, P., et al. “6I-3 Low-Cost Transceiver Unit for SAW-Sensors Using Customized
    Hardware Components.” <i>2006 IEEE Ultrasonics Symposium</i>, IEEE, 2007, doi:<a
    href="https://doi.org/10.1109/ultsym.2006.223">10.1109/ultsym.2006.223</a>.
  short: 'P. Scholz, M. Dierkes, U. Hilleringmann, in: 2006 IEEE Ultrasonics Symposium,
    IEEE, 2007.'
date_created: 2023-01-24T12:21:26Z
date_updated: 2023-03-22T10:33:30Z
department:
- _id: '59'
doi: 10.1109/ultsym.2006.223
language:
- iso: eng
publication: 2006 IEEE Ultrasonics Symposium
publication_status: published
publisher: IEEE
status: public
title: 6I-3 Low-Cost Transceiver Unit for SAW-Sensors Using Customized Hardware Components
type: conference
user_id: '20179'
year: '2007'
...
---
_id: '39842'
author:
- first_name: C.
  full_name: Pannemann, C.
  last_name: Pannemann
- first_name: T.
  full_name: Diekmann, T.
  last_name: Diekmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Schurmann, U.
  last_name: Schurmann
- first_name: M.
  full_name: Scharnberg, M.
  last_name: Scharnberg
- first_name: V.
  full_name: Zaporojtchenko, V.
  last_name: Zaporojtchenko
- first_name: R.
  full_name: Adelung, R.
  last_name: Adelung
- first_name: F.
  full_name: Faupel, F.
  last_name: Faupel
citation:
  ama: 'Pannemann C, Diekmann T, Hilleringmann U, et al. Encapsulating the active
    Layer of organic Thin-Film Transistors. In: <i>Polytronic 2005 - 5th International
    Conference on Polymers and Adhesives in Microelectronics and Photonics</i>. IEEE;
    2006. doi:<a href="https://doi.org/10.1109/polytr.2005.1596488">10.1109/polytr.2005.1596488</a>'
  apa: Pannemann, C., Diekmann, T., Hilleringmann, U., Schurmann, U., Scharnberg,
    M., Zaporojtchenko, V., Adelung, R., &#38; Faupel, F. (2006). Encapsulating the
    active Layer of organic Thin-Film Transistors. <i>Polytronic 2005 - 5th International
    Conference on Polymers and Adhesives in Microelectronics and Photonics</i>. <a
    href="https://doi.org/10.1109/polytr.2005.1596488">https://doi.org/10.1109/polytr.2005.1596488</a>
  bibtex: '@inproceedings{Pannemann_Diekmann_Hilleringmann_Schurmann_Scharnberg_Zaporojtchenko_Adelung_Faupel_2006,
    title={Encapsulating the active Layer of organic Thin-Film Transistors}, DOI={<a
    href="https://doi.org/10.1109/polytr.2005.1596488">10.1109/polytr.2005.1596488</a>},
    booktitle={Polytronic 2005 - 5th International Conference on Polymers and Adhesives
    in Microelectronics and Photonics}, publisher={IEEE}, author={Pannemann, C. and
    Diekmann, T. and Hilleringmann, Ulrich and Schurmann, U. and Scharnberg, M. and
    Zaporojtchenko, V. and Adelung, R. and Faupel, F.}, year={2006} }'
  chicago: Pannemann, C., T. Diekmann, Ulrich Hilleringmann, U. Schurmann, M. Scharnberg,
    V. Zaporojtchenko, R. Adelung, and F. Faupel. “Encapsulating the Active Layer
    of Organic Thin-Film Transistors.” In <i>Polytronic 2005 - 5th International Conference
    on Polymers and Adhesives in Microelectronics and Photonics</i>. IEEE, 2006. <a
    href="https://doi.org/10.1109/polytr.2005.1596488">https://doi.org/10.1109/polytr.2005.1596488</a>.
  ieee: 'C. Pannemann <i>et al.</i>, “Encapsulating the active Layer of organic Thin-Film
    Transistors,” 2006, doi: <a href="https://doi.org/10.1109/polytr.2005.1596488">10.1109/polytr.2005.1596488</a>.'
  mla: Pannemann, C., et al. “Encapsulating the Active Layer of Organic Thin-Film
    Transistors.” <i>Polytronic 2005 - 5th International Conference on Polymers and
    Adhesives in Microelectronics and Photonics</i>, IEEE, 2006, doi:<a href="https://doi.org/10.1109/polytr.2005.1596488">10.1109/polytr.2005.1596488</a>.
  short: 'C. Pannemann, T. Diekmann, U. Hilleringmann, U. Schurmann, M. Scharnberg,
    V. Zaporojtchenko, R. Adelung, F. Faupel, in: Polytronic 2005 - 5th International
    Conference on Polymers and Adhesives in Microelectronics and Photonics, IEEE,
    2006.'
date_created: 2023-01-25T08:35:55Z
date_updated: 2023-03-22T10:35:28Z
department:
- _id: '59'
doi: 10.1109/polytr.2005.1596488
language:
- iso: eng
publication: Polytronic 2005 - 5th International Conference on Polymers and Adhesives
  in Microelectronics and Photonics
publication_status: published
publisher: IEEE
status: public
title: Encapsulating the active Layer of organic Thin-Film Transistors
type: conference
user_id: '20179'
year: '2006'
...
---
_id: '39846'
abstract:
- lang: eng
  text: <jats:p>This article reports degradation experiments on organic thin film
    transistors using the small organic molecule pentacene as the semiconducting material.
    Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers
    as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show
    the influence of temperature and exposure to ambient air on the charge carrier
    field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found
    to have unambiguously degraded over 3 orders of magnitude in maximum on-current
    and charge carrier field-effect mobility, but they still operated after a period
    of 9 months in ambient air conditions. A thermal treatment was carried out in
    vacuum conditions and revealed a degradation of the charge carrier field-effect
    mobility, maximum on-current, and threshold voltage.</jats:p>
author:
- first_name: Ch.
  full_name: Pannemann, Ch.
  last_name: Pannemann
- first_name: T.
  full_name: Diekmann, T.
  last_name: Diekmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect
    transistors made of pentacene. <i>Journal of Materials Research</i>. 2005;19(7):1999-2002.
    doi:<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>
  apa: Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). Degradation of
    organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>,
    <i>19</i>(7), 1999–2002. <a href="https://doi.org/10.1557/jmr.2004.0267">https://doi.org/10.1557/jmr.2004.0267</a>
  bibtex: '@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic
    field-effect transistors made of pentacene}, volume={19}, DOI={<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>},
    number={7}, journal={Journal of Materials Research}, publisher={Springer Science
    and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann,
    Ulrich}, year={2005}, pages={1999–2002} }'
  chicago: 'Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Degradation of
    Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>
    19, no. 7 (2005): 1999–2002. <a href="https://doi.org/10.1557/jmr.2004.0267">https://doi.org/10.1557/jmr.2004.0267</a>.'
  ieee: 'Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic
    field-effect transistors made of pentacene,” <i>Journal of Materials Research</i>,
    vol. 19, no. 7, pp. 1999–2002, 2005, doi: <a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>.'
  mla: Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made
    of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer
    Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>.
  short: Ch. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research
    19 (2005) 1999–2002.
date_created: 2023-01-25T08:37:47Z
date_updated: 2023-03-21T10:06:18Z
department:
- _id: '59'
doi: 10.1557/jmr.2004.0267
intvolume: '        19'
issue: '7'
keyword:
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 1999-2002
publication: Journal of Materials Research
publication_identifier:
  issn:
  - 0884-2914
  - 2044-5326
publication_status: published
publisher: Springer Science and Business Media LLC
status: public
title: Degradation of organic field-effect transistors made of pentacene
type: journal_article
user_id: '20179'
volume: 19
year: '2005'
...
---
_id: '39848'
author:
- first_name: Ch.
  full_name: Pannemann, Ch.
  last_name: Pannemann
- first_name: T.
  full_name: Diekmann, T.
  last_name: Diekmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Pannemann Ch, Diekmann T, Hilleringmann U. On the degradation of organic field-effect
    transistors. In: <i>Proceedings. The 16th International Conference on Microelectronics,
    2004. ICM 2004.</i> IEEE; 2005. doi:<a href="https://doi.org/10.1109/icm.2004.1434210">10.1109/icm.2004.1434210</a>'
  apa: Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). On the degradation
    of organic field-effect transistors. <i>Proceedings. The 16th International Conference
    on Microelectronics, 2004. ICM 2004.</i> <a href="https://doi.org/10.1109/icm.2004.1434210">https://doi.org/10.1109/icm.2004.1434210</a>
  bibtex: '@inproceedings{Pannemann_Diekmann_Hilleringmann_2005, title={On the degradation
    of organic field-effect transistors}, DOI={<a href="https://doi.org/10.1109/icm.2004.1434210">10.1109/icm.2004.1434210</a>},
    booktitle={Proceedings. The 16th International Conference on Microelectronics,
    2004. ICM 2004.}, publisher={IEEE}, author={Pannemann, Ch. and Diekmann, T. and
    Hilleringmann, Ulrich}, year={2005} }'
  chicago: Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “On the Degradation
    of Organic Field-Effect Transistors.” In <i>Proceedings. The 16th International
    Conference on Microelectronics, 2004. ICM 2004.</i> IEEE, 2005. <a href="https://doi.org/10.1109/icm.2004.1434210">https://doi.org/10.1109/icm.2004.1434210</a>.
  ieee: 'Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “On the degradation of
    organic field-effect transistors,” 2005, doi: <a href="https://doi.org/10.1109/icm.2004.1434210">10.1109/icm.2004.1434210</a>.'
  mla: Pannemann, Ch., et al. “On the Degradation of Organic Field-Effect Transistors.”
    <i>Proceedings. The 16th International Conference on Microelectronics, 2004. ICM
    2004.</i>, IEEE, 2005, doi:<a href="https://doi.org/10.1109/icm.2004.1434210">10.1109/icm.2004.1434210</a>.
  short: 'Ch. Pannemann, T. Diekmann, U. Hilleringmann, in: Proceedings. The 16th
    International Conference on Microelectronics, 2004. ICM 2004., IEEE, 2005.'
date_created: 2023-01-25T08:38:15Z
date_updated: 2023-03-22T10:36:03Z
department:
- _id: '59'
doi: 10.1109/icm.2004.1434210
language:
- iso: eng
publication: Proceedings. The 16th International Conference on Microelectronics, 2004.
  ICM 2004.
publication_status: published
publisher: IEEE
status: public
title: On the degradation of organic field-effect transistors
type: conference
user_id: '20179'
year: '2005'
...
---
_id: '39349'
abstract:
- lang: eng
  text: <jats:p>This article reports degradation experiments on organic thin film
    transistors using the small organic molecule pentacene as the semiconducting material.
    Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers
    as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show
    the influence of temperature and exposure to ambient air on the charge carrier
    field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found
    to have unambiguously degraded over 3 orders of magnitude in maximum on-current
    and charge carrier field-effect mobility, but they still operated after a period
    of 9 months in ambient air conditions. A thermal treatment was carried out in
    vacuum conditions and revealed a degradation of the charge carrier field-effect
    mobility, maximum on-current, and threshold voltage.</jats:p>
author:
- first_name: Ch.
  full_name: Pannemann, Ch.
  last_name: Pannemann
- first_name: T.
  full_name: Diekmann, T.
  last_name: Diekmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect
    transistors made of pentacene. <i>Journal of Materials Research</i>. 2005;19(7):1999-2002.
    doi:<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>
  apa: Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). Degradation of
    organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>,
    <i>19</i>(7), 1999–2002. <a href="https://doi.org/10.1557/jmr.2004.0267">https://doi.org/10.1557/jmr.2004.0267</a>
  bibtex: '@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic
    field-effect transistors made of pentacene}, volume={19}, DOI={<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>},
    number={7}, journal={Journal of Materials Research}, publisher={Springer Science
    and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann,
    Ulrich}, year={2005}, pages={1999–2002} }'
  chicago: 'Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Degradation of
    Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>
    19, no. 7 (2005): 1999–2002. <a href="https://doi.org/10.1557/jmr.2004.0267">https://doi.org/10.1557/jmr.2004.0267</a>.'
  ieee: 'Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic
    field-effect transistors made of pentacene,” <i>Journal of Materials Research</i>,
    vol. 19, no. 7, pp. 1999–2002, 2005, doi: <a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>.'
  mla: Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made
    of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer
    Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>.
  short: Ch. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research
    19 (2005) 1999–2002.
date_created: 2023-01-24T09:24:41Z
date_updated: 2023-03-22T10:38:56Z
department:
- _id: '59'
doi: 10.1557/jmr.2004.0267
intvolume: '        19'
issue: '7'
keyword:
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 1999-2002
publication: Journal of Materials Research
publication_identifier:
  issn:
  - 0884-2914
  - 2044-5326
publication_status: published
publisher: Springer Science and Business Media LLC
status: public
title: Degradation of organic field-effect transistors made of pentacene
type: journal_article
user_id: '20179'
volume: 19
year: '2005'
...
---
_id: '39574'
article_number: '024104'
author:
- first_name: M.
  full_name: Scharnberg, M.
  last_name: Scharnberg
- first_name: J.
  full_name: Hu, J.
  last_name: Hu
- first_name: J.
  full_name: Kanzow, J.
  last_name: Kanzow
- first_name: K.
  full_name: Rätzke, K.
  last_name: Rätzke
- first_name: R.
  full_name: Adelung, R.
  last_name: Adelung
- first_name: F.
  full_name: Faupel, F.
  last_name: Faupel
- first_name: C.
  full_name: Pannemann, C.
  last_name: Pannemann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: S.
  full_name: Meyer, S.
  last_name: Meyer
- first_name: J.
  full_name: Pflaum, J.
  last_name: Pflaum
citation:
  ama: Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive
    tool for the detection of metal penetration in molecular-based organic electronics.
    <i>Applied Physics Letters</i>. 2005;86(2). doi:<a href="https://doi.org/10.1063/1.1849845">10.1063/1.1849845</a>
  apa: Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann,
    C., Hilleringmann, U., Meyer, S., &#38; Pflaum, J. (2005). Radiotracer measurements
    as a sensitive tool for the detection of metal penetration in molecular-based
    organic electronics. <i>Applied Physics Letters</i>, <i>86</i>(2), Article 024104.
    <a href="https://doi.org/10.1063/1.1849845">https://doi.org/10.1063/1.1849845</a>
  bibtex: '@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005,
    title={Radiotracer measurements as a sensitive tool for the detection of metal
    penetration in molecular-based organic electronics}, volume={86}, DOI={<a href="https://doi.org/10.1063/1.1849845">10.1063/1.1849845</a>},
    number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing},
    author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R.
    and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum,
    J.}, year={2005} }'
  chicago: Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C.
    Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements
    as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based
    Organic Electronics.” <i>Applied Physics Letters</i> 86, no. 2 (2005). <a href="https://doi.org/10.1063/1.1849845">https://doi.org/10.1063/1.1849845</a>.
  ieee: 'M. Scharnberg <i>et al.</i>, “Radiotracer measurements as a sensitive tool
    for the detection of metal penetration in molecular-based organic electronics,”
    <i>Applied Physics Letters</i>, vol. 86, no. 2, Art. no. 024104, 2005, doi: <a
    href="https://doi.org/10.1063/1.1849845">10.1063/1.1849845</a>.'
  mla: Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the
    Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied
    Physics Letters</i>, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:<a href="https://doi.org/10.1063/1.1849845">10.1063/1.1849845</a>.
  short: M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann,
    U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).
date_created: 2023-01-24T12:21:59Z
date_updated: 2023-03-22T10:34:05Z
department:
- _id: '59'
doi: 10.1063/1.1849845
intvolume: '        86'
issue: '2'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
  issn:
  - 0003-6951
  - 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Radiotracer measurements as a sensitive tool for the detection of metal penetration
  in molecular-based organic electronics
type: journal_article
user_id: '20179'
volume: 86
year: '2005'
...
---
_id: '39835'
author:
- first_name: R.
  full_name: Scholz, R.
  last_name: Scholz
- first_name: A.-D.
  full_name: Müller, A.-D.
  last_name: Müller
- first_name: F.
  full_name: Müller, F.
  last_name: Müller
- first_name: I.
  full_name: Thurzo, I.
  last_name: Thurzo
- first_name: B. A.
  full_name: Paez, B. A.
  last_name: Paez
- first_name: L.
  full_name: Mancera, L.
  last_name: Mancera
- first_name: D. R. T.
  full_name: Zahn, D. R. T.
  last_name: Zahn
- first_name: C.
  full_name: Pannemann, C.
  last_name: Pannemann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier
    mobilities in pentacene OFET structures as obtained from electrical characterization
    and potentiometry. In: Bao Z, Gundlach DJ, eds. <i>SPIE Proceedings</i>. SPIE;
    2005. doi:<a href="https://doi.org/10.1117/12.617004">10.1117/12.617004</a>'
  apa: Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L.,
    Zahn, D. R. T., Pannemann, C., &#38; Hilleringmann, U. (2005). Comparison between
    the charge carrier mobilities in pentacene OFET structures as obtained from electrical
    characterization and potentiometry. In Z. Bao &#38; D. J. Gundlach (Eds.), <i>SPIE
    Proceedings</i>. SPIE. <a href="https://doi.org/10.1117/12.617004">https://doi.org/10.1117/12.617004</a>
  bibtex: '@inproceedings{Scholz_Müller_Müller_Thurzo_Paez_Mancera_Zahn_Pannemann_Hilleringmann_2005,
    title={Comparison between the charge carrier mobilities in pentacene OFET structures
    as obtained from electrical characterization and potentiometry}, DOI={<a href="https://doi.org/10.1117/12.617004">10.1117/12.617004</a>},
    booktitle={SPIE Proceedings}, publisher={SPIE}, author={Scholz, R. and Müller,
    A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn,
    D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}, editor={Bao, Zhenan and
    Gundlach, David J.}, year={2005} }'
  chicago: Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera,
    D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the
    Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical
    Characterization and Potentiometry.” In <i>SPIE Proceedings</i>, edited by Zhenan
    Bao and David J. Gundlach. SPIE, 2005. <a href="https://doi.org/10.1117/12.617004">https://doi.org/10.1117/12.617004</a>.
  ieee: 'R. Scholz <i>et al.</i>, “Comparison between the charge carrier mobilities
    in pentacene OFET structures as obtained from electrical characterization and
    potentiometry,” in <i>SPIE Proceedings</i>, 2005, doi: <a href="https://doi.org/10.1117/12.617004">10.1117/12.617004</a>.'
  mla: Scholz, R., et al. “Comparison between the Charge Carrier Mobilities in Pentacene
    OFET Structures as Obtained from Electrical Characterization and Potentiometry.”
    <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach, SPIE, 2005,
    doi:<a href="https://doi.org/10.1117/12.617004">10.1117/12.617004</a>.
  short: 'R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T.
    Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings,
    SPIE, 2005.'
date_created: 2023-01-25T08:20:11Z
date_updated: 2023-03-22T10:34:27Z
department:
- _id: '59'
doi: 10.1117/12.617004
editor:
- first_name: Zhenan
  full_name: Bao, Zhenan
  last_name: Bao
- first_name: David J.
  full_name: Gundlach, David J.
  last_name: Gundlach
language:
- iso: eng
publication: SPIE Proceedings
publication_identifier:
  issn:
  - 0277-786X
publication_status: published
publisher: SPIE
status: public
title: Comparison between the charge carrier mobilities in pentacene OFET structures
  as obtained from electrical characterization and potentiometry
type: conference
user_id: '20179'
year: '2005'
...
---
_id: '39834'
author:
- first_name: R.
  full_name: Scholz, R.
  last_name: Scholz
- first_name: A.-D.
  full_name: Müller, A.-D.
  last_name: Müller
- first_name: F.
  full_name: Müller, F.
  last_name: Müller
- first_name: I.
  full_name: Thurzo, I.
  last_name: Thurzo
- first_name: B. A.
  full_name: Paez, B. A.
  last_name: Paez
- first_name: L.
  full_name: Mancera, L.
  last_name: Mancera
- first_name: D. R. T.
  full_name: Zahn, D. R. T.
  last_name: Zahn
- first_name: C.
  full_name: Pannemann, C.
  last_name: Pannemann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier
    mobilities in pentacene OFET structures as obtained from electrical characterization
    and potentiometry. In: Bao Z, Gundlach DJ, eds. <i>SPIE Proceedings</i>. SPIE;
    2005. doi:<a href="https://doi.org/10.1117/12.617004">10.1117/12.617004</a>'
  apa: Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L.,
    Zahn, D. R. T., Pannemann, C., &#38; Hilleringmann, U. (2005). Comparison between
    the charge carrier mobilities in pentacene OFET structures as obtained from electrical
    characterization and potentiometry. In Z. Bao &#38; D. J. Gundlach (Eds.), <i>SPIE
    Proceedings</i>. SPIE. <a href="https://doi.org/10.1117/12.617004">https://doi.org/10.1117/12.617004</a>
  bibtex: '@inproceedings{Scholz_Müller_Müller_Thurzo_Paez_Mancera_Zahn_Pannemann_Hilleringmann_2005,
    title={Comparison between the charge carrier mobilities in pentacene OFET structures
    as obtained from electrical characterization and potentiometry}, DOI={<a href="https://doi.org/10.1117/12.617004">10.1117/12.617004</a>},
    booktitle={SPIE Proceedings}, publisher={SPIE}, author={Scholz, R. and Müller,
    A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn,
    D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}, editor={Bao, Zhenan and
    Gundlach, David J.}, year={2005} }'
  chicago: Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera,
    D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the
    Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical
    Characterization and Potentiometry.” In <i>SPIE Proceedings</i>, edited by Zhenan
    Bao and David J. Gundlach. SPIE, 2005. <a href="https://doi.org/10.1117/12.617004">https://doi.org/10.1117/12.617004</a>.
  ieee: 'R. Scholz <i>et al.</i>, “Comparison between the charge carrier mobilities
    in pentacene OFET structures as obtained from electrical characterization and
    potentiometry,” in <i>SPIE Proceedings</i>, 2005, doi: <a href="https://doi.org/10.1117/12.617004">10.1117/12.617004</a>.'
  mla: Scholz, R., et al. “Comparison between the Charge Carrier Mobilities in Pentacene
    OFET Structures as Obtained from Electrical Characterization and Potentiometry.”
    <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach, SPIE, 2005,
    doi:<a href="https://doi.org/10.1117/12.617004">10.1117/12.617004</a>.
  short: 'R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T.
    Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings,
    SPIE, 2005.'
date_created: 2023-01-25T08:19:15Z
date_updated: 2023-03-22T10:32:51Z
department:
- _id: '59'
doi: 10.1117/12.617004
editor:
- first_name: Zhenan
  full_name: Bao, Zhenan
  last_name: Bao
- first_name: David J.
  full_name: Gundlach, David J.
  last_name: Gundlach
language:
- iso: eng
publication: SPIE Proceedings
publication_identifier:
  issn:
  - 0277-786X
publication_status: published
publisher: SPIE
status: public
title: Comparison between the charge carrier mobilities in pentacene OFET structures
  as obtained from electrical characterization and potentiometry
type: conference
user_id: '20179'
year: '2005'
...
---
_id: '39850'
abstract:
- lang: eng
  text: In der Halbleitertechnologie werden die Materialien Siliziumdioxid, Siliziumnitrid,
    Polysilizium, Silizium, Aluminium sowie Wolfram und Titan mit ihren jeweiligen
    Metallsiliziden geätzt. Die Ätztechnik dient dabei zum ganzflächigen Abtragen
    eines Materials oder zum Übertragen der Struktur des lithografisch erzeugten Lackmusters
    in die darunter liegende Schicht. Für diese Aufgabe bieten sich einerseits nasschemische
    Ätzlösungen an, zum anderen eignen sich speziell entwickelte Trockenätzverfahren
    zur geforderten präzisen Strukturübertragung vom Lack in das Material.
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Hilleringmann U. Ätztechnik. In: <i>Silizium-Halbleitertechnologie</i>. Vieweg+Teubner
    Verlag; 2004:65–90. doi:<a href="https://doi.org/10.1007/978-3-322-94072-8_5">10.1007/978-3-322-94072-8_5</a>'
  apa: Hilleringmann, U. (2004). Ätztechnik. In <i>Silizium-Halbleitertechnologie</i>
    (pp. 65–90). Vieweg+Teubner Verlag. <a href="https://doi.org/10.1007/978-3-322-94072-8_5">https://doi.org/10.1007/978-3-322-94072-8_5</a>
  bibtex: '@inbook{Hilleringmann_2004, place={Wiesbaden}, title={Ätztechnik}, DOI={<a
    href="https://doi.org/10.1007/978-3-322-94072-8_5">10.1007/978-3-322-94072-8_5</a>},
    booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag},
    author={Hilleringmann, Ulrich}, year={2004}, pages={65–90} }'
  chicago: 'Hilleringmann, Ulrich. “Ätztechnik.” In <i>Silizium-Halbleitertechnologie</i>,
    65–90. Wiesbaden: Vieweg+Teubner Verlag, 2004. <a href="https://doi.org/10.1007/978-3-322-94072-8_5">https://doi.org/10.1007/978-3-322-94072-8_5</a>.'
  ieee: 'U. Hilleringmann, “Ätztechnik,” in <i>Silizium-Halbleitertechnologie</i>,
    Wiesbaden: Vieweg+Teubner Verlag, 2004, pp. 65–90.'
  mla: Hilleringmann, Ulrich. “Ätztechnik.” <i>Silizium-Halbleitertechnologie</i>,
    Vieweg+Teubner Verlag, 2004, pp. 65–90, doi:<a href="https://doi.org/10.1007/978-3-322-94072-8_5">10.1007/978-3-322-94072-8_5</a>.
  short: 'U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag,
    Wiesbaden, 2004, pp. 65–90.'
date_created: 2023-01-25T08:39:18Z
date_updated: 2023-03-21T10:05:00Z
department:
- _id: '59'
doi: 10.1007/978-3-322-94072-8_5
language:
- iso: eng
page: 65–90
place: Wiesbaden
publication: Silizium-Halbleitertechnologie
publication_identifier:
  isbn:
  - 978-3-322-94072-8
publisher: Vieweg+Teubner Verlag
status: public
title: Ätztechnik
type: book_chapter
user_id: '20179'
year: '2004'
...
---
_id: '39872'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: C.
  full_name: Pannemann, C.
  last_name: Pannemann
citation:
  ama: 'Hilleringmann U, Pannemann C. Imprint structured organic thin film transistors
    as driving circuit in single-use sensor applications. In: Zhang G, Zhao H, Wang
    Z, eds. <i>Fifth International Symposium on Instrumentation and Control Technology</i>.
    SPIE; 2004. doi:<a href="https://doi.org/10.1117/12.521463">10.1117/12.521463</a>'
  apa: Hilleringmann, U., &#38; Pannemann, C. (2004). Imprint structured organic thin
    film transistors as driving circuit in single-use sensor applications. In G. Zhang,
    H. Zhao, &#38; Z. Wang (Eds.), <i>Fifth International Symposium on Instrumentation
    and Control Technology</i>. SPIE. <a href="https://doi.org/10.1117/12.521463">https://doi.org/10.1117/12.521463</a>
  bibtex: '@inproceedings{Hilleringmann_Pannemann_2004, title={Imprint structured
    organic thin film transistors as driving circuit in single-use sensor applications},
    DOI={<a href="https://doi.org/10.1117/12.521463">10.1117/12.521463</a>}, booktitle={Fifth
    International Symposium on Instrumentation and Control Technology}, publisher={SPIE},
    author={Hilleringmann, Ulrich and Pannemann, C.}, editor={Zhang, Guangjun and
    Zhao, Huijie and Wang, Zhongyu}, year={2004} }'
  chicago: Hilleringmann, Ulrich, and C. Pannemann. “Imprint Structured Organic Thin
    Film Transistors as Driving Circuit in Single-Use Sensor Applications.” In <i>Fifth
    International Symposium on Instrumentation and Control Technology</i>, edited
    by Guangjun Zhang, Huijie Zhao, and Zhongyu Wang. SPIE, 2004. <a href="https://doi.org/10.1117/12.521463">https://doi.org/10.1117/12.521463</a>.
  ieee: 'U. Hilleringmann and C. Pannemann, “Imprint structured organic thin film
    transistors as driving circuit in single-use sensor applications,” in <i>Fifth
    International Symposium on Instrumentation and Control Technology</i>, 2004, doi:
    <a href="https://doi.org/10.1117/12.521463">10.1117/12.521463</a>.'
  mla: Hilleringmann, Ulrich, and C. Pannemann. “Imprint Structured Organic Thin Film
    Transistors as Driving Circuit in Single-Use Sensor Applications.” <i>Fifth International
    Symposium on Instrumentation and Control Technology</i>, edited by Guangjun Zhang
    et al., SPIE, 2004, doi:<a href="https://doi.org/10.1117/12.521463">10.1117/12.521463</a>.
  short: 'U. Hilleringmann, C. Pannemann, in: G. Zhang, H. Zhao, Z. Wang (Eds.), Fifth
    International Symposium on Instrumentation and Control Technology, SPIE, 2004.'
date_created: 2023-01-25T09:04:07Z
date_updated: 2023-03-21T10:04:17Z
department:
- _id: '59'
doi: 10.1117/12.521463
editor:
- first_name: Guangjun
  full_name: Zhang, Guangjun
  last_name: Zhang
- first_name: Huijie
  full_name: Zhao, Huijie
  last_name: Zhao
- first_name: Zhongyu
  full_name: Wang, Zhongyu
  last_name: Wang
language:
- iso: eng
publication: Fifth International Symposium on Instrumentation and Control Technology
publication_identifier:
  issn:
  - 0277-786X
publication_status: published
publisher: SPIE
status: public
title: Imprint structured organic thin film transistors as driving circuit in single-use
  sensor applications
type: conference
user_id: '20179'
year: '2004'
...
---
_id: '39873'
author:
- first_name: Ralf
  full_name: Otterbach, Ralf
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Otterbach R, Hilleringmann U. Piezoresistive pressure sensors in CVD diamond
    for high-temperature applications. In: Zhang G, Zhao H, Wang Z, eds. <i>Fifth
    International Symposium on Instrumentation and Control Technology</i>. SPIE; 2004.
    doi:<a href="https://doi.org/10.1117/12.521928">10.1117/12.521928</a>'
  apa: Otterbach, R., &#38; Hilleringmann, U. (2004). Piezoresistive pressure sensors
    in CVD diamond for high-temperature applications. In G. Zhang, H. Zhao, &#38;
    Z. Wang (Eds.), <i>Fifth International Symposium on Instrumentation and Control
    Technology</i>. SPIE. <a href="https://doi.org/10.1117/12.521928">https://doi.org/10.1117/12.521928</a>
  bibtex: '@inproceedings{Otterbach_Hilleringmann_2004, title={Piezoresistive pressure
    sensors in CVD diamond for high-temperature applications}, DOI={<a href="https://doi.org/10.1117/12.521928">10.1117/12.521928</a>},
    booktitle={Fifth International Symposium on Instrumentation and Control Technology},
    publisher={SPIE}, author={Otterbach, Ralf and Hilleringmann, Ulrich}, editor={Zhang,
    Guangjun and Zhao, Huijie and Wang, Zhongyu}, year={2004} }'
  chicago: Otterbach, Ralf, and Ulrich Hilleringmann. “Piezoresistive Pressure Sensors
    in CVD Diamond for High-Temperature Applications.” In <i>Fifth International Symposium
    on Instrumentation and Control Technology</i>, edited by Guangjun Zhang, Huijie
    Zhao, and Zhongyu Wang. SPIE, 2004. <a href="https://doi.org/10.1117/12.521928">https://doi.org/10.1117/12.521928</a>.
  ieee: 'R. Otterbach and U. Hilleringmann, “Piezoresistive pressure sensors in CVD
    diamond for high-temperature applications,” in <i>Fifth International Symposium
    on Instrumentation and Control Technology</i>, 2004, doi: <a href="https://doi.org/10.1117/12.521928">10.1117/12.521928</a>.'
  mla: Otterbach, Ralf, and Ulrich Hilleringmann. “Piezoresistive Pressure Sensors
    in CVD Diamond for High-Temperature Applications.” <i>Fifth International Symposium
    on Instrumentation and Control Technology</i>, edited by Guangjun Zhang et al.,
    SPIE, 2004, doi:<a href="https://doi.org/10.1117/12.521928">10.1117/12.521928</a>.
  short: 'R. Otterbach, U. Hilleringmann, in: G. Zhang, H. Zhao, Z. Wang (Eds.), Fifth
    International Symposium on Instrumentation and Control Technology, SPIE, 2004.'
date_created: 2023-01-25T09:04:49Z
date_updated: 2023-03-21T10:04:02Z
department:
- _id: '59'
doi: 10.1117/12.521928
editor:
- first_name: Guangjun
  full_name: Zhang, Guangjun
  last_name: Zhang
- first_name: Huijie
  full_name: Zhao, Huijie
  last_name: Zhao
- first_name: Zhongyu
  full_name: Wang, Zhongyu
  last_name: Wang
language:
- iso: eng
publication: Fifth International Symposium on Instrumentation and Control Technology
publication_identifier:
  issn:
  - 0277-786X
publication_status: published
publisher: SPIE
status: public
title: Piezoresistive pressure sensors in CVD diamond for high-temperature applications
type: conference
user_id: '20179'
year: '2004'
...
---
_id: '39887'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.
  full_name: Vieregge, T.
  last_name: Vieregge
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
citation:
  ama: 'Hilleringmann U, Vieregge T, Horstmann JT. Masking and etching of silicon
    and related materials for geometries down to 25 nm. In: <i>IECON’99. Conference
    Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society
    (Cat. No.99CH37029)</i>. IEEE; 2003. doi:<a href="https://doi.org/10.1109/iecon.1999.822171">10.1109/iecon.1999.822171</a>'
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2003). Masking and
    etching of silicon and related materials for geometries down to 25 nm. <i>IECON’99.
    Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics
    Society (Cat. No.99CH37029)</i>. <a href="https://doi.org/10.1109/iecon.1999.822171">https://doi.org/10.1109/iecon.1999.822171</a>
  bibtex: '@inproceedings{Hilleringmann_Vieregge_Horstmann_2003, title={Masking and
    etching of silicon and related materials for geometries down to 25 nm}, DOI={<a
    href="https://doi.org/10.1109/iecon.1999.822171">10.1109/iecon.1999.822171</a>},
    booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE
    Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Hilleringmann,
    Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2003} }'
  chicago: Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “Masking and Etching
    of Silicon and Related Materials for Geometries down to 25 Nm.” In <i>IECON’99.
    Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics
    Society (Cat. No.99CH37029)</i>. IEEE, 2003. <a href="https://doi.org/10.1109/iecon.1999.822171">https://doi.org/10.1109/iecon.1999.822171</a>.
  ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “Masking and etching
    of silicon and related materials for geometries down to 25 nm,” 2003, doi: <a
    href="https://doi.org/10.1109/iecon.1999.822171">10.1109/iecon.1999.822171</a>.'
  mla: Hilleringmann, Ulrich, et al. “Masking and Etching of Silicon and Related Materials
    for Geometries down to 25 Nm.” <i>IECON’99. Conference Proceedings. 25th Annual
    Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>,
    IEEE, 2003, doi:<a href="https://doi.org/10.1109/iecon.1999.822171">10.1109/iecon.1999.822171</a>.
  short: 'U. Hilleringmann, T. Vieregge, J.T. Horstmann, in: IECON’99. Conference
    Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society
    (Cat. No.99CH37029), IEEE, 2003.'
date_created: 2023-01-25T09:12:16Z
date_updated: 2023-03-21T09:59:07Z
department:
- _id: '59'
doi: 10.1109/iecon.1999.822171
language:
- iso: eng
publication: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE
  Industrial Electronics Society (Cat. No.99CH37029)
publication_status: published
publisher: IEEE
status: public
title: Masking and etching of silicon and related materials for geometries down to
  25 nm
type: conference
user_id: '20179'
year: '2003'
...
---
_id: '39888'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Horstmann JT, Hilleringmann U, Goser K. Matching analysis of NMOS-transistors
    with a channel length down to 30 nm. In: <i>IECON’99. Conference Proceedings.
    25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>.
    IEEE; 2003. doi:<a href="https://doi.org/10.1109/iecon.1999.822163">10.1109/iecon.1999.822163</a>'
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2003). Matching analysis
    of NMOS-transistors with a channel length down to 30 nm. <i>IECON’99. Conference
    Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society
    (Cat. No.99CH37029)</i>. <a href="https://doi.org/10.1109/iecon.1999.822163">https://doi.org/10.1109/iecon.1999.822163</a>
  bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_2003, title={Matching analysis
    of NMOS-transistors with a channel length down to 30 nm}, DOI={<a href="https://doi.org/10.1109/iecon.1999.822163">10.1109/iecon.1999.822163</a>},
    booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE
    Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Horstmann,
    J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2003} }'
  chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Matching Analysis
    of NMOS-Transistors with a Channel Length down to 30 Nm.” In <i>IECON’99. Conference
    Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society
    (Cat. No.99CH37029)</i>. IEEE, 2003. <a href="https://doi.org/10.1109/iecon.1999.822163">https://doi.org/10.1109/iecon.1999.822163</a>.
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Matching analysis of NMOS-transistors
    with a channel length down to 30 nm,” 2003, doi: <a href="https://doi.org/10.1109/iecon.1999.822163">10.1109/iecon.1999.822163</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of NMOS-Transistors with a Channel
    Length down to 30 Nm.” <i>IECON’99. Conference Proceedings. 25th Annual Conference
    of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>, IEEE, 2003,
    doi:<a href="https://doi.org/10.1109/iecon.1999.822163">10.1109/iecon.1999.822163</a>.
  short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: IECON’99. Conference Proceedings.
    25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029),
    IEEE, 2003.'
date_created: 2023-01-25T09:12:46Z
date_updated: 2023-03-21T09:58:50Z
department:
- _id: '59'
doi: 10.1109/iecon.1999.822163
language:
- iso: eng
publication: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE
  Industrial Electronics Society (Cat. No.99CH37029)
publication_status: published
publisher: IEEE
status: public
title: Matching analysis of NMOS-transistors with a channel length down to 30 nm
type: conference
user_id: '20179'
year: '2003'
...
---
_id: '39885'
author:
- first_name: G.
  full_name: Wirth, G.
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Wirth G, Hilleringmann U, Horstmann JT, Goser K. Negative differential resistance
    in ultrashort bulk MOSFETs. In: <i>IECON’99. Conference Proceedings. 25th Annual
    Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>.
    IEEE; 2003. doi:<a href="https://doi.org/10.1109/iecon.1999.822164">10.1109/iecon.1999.822164</a>'
  apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2003). Negative
    differential resistance in ultrashort bulk MOSFETs. <i>IECON’99. Conference Proceedings.
    25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>.
    <a href="https://doi.org/10.1109/iecon.1999.822164">https://doi.org/10.1109/iecon.1999.822164</a>
  bibtex: '@inproceedings{Wirth_Hilleringmann_Horstmann_Goser_2003, title={Negative
    differential resistance in ultrashort bulk MOSFETs}, DOI={<a href="https://doi.org/10.1109/iecon.1999.822164">10.1109/iecon.1999.822164</a>},
    booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE
    Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Wirth,
    G. and Hilleringmann, Ulrich and Horstmann, J.T. and Goser, K.}, year={2003} }'
  chicago: Wirth, G., Ulrich Hilleringmann, J.T. Horstmann, and K. Goser. “Negative
    Differential Resistance in Ultrashort Bulk MOSFETs.” In <i>IECON’99. Conference
    Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society
    (Cat. No.99CH37029)</i>. IEEE, 2003. <a href="https://doi.org/10.1109/iecon.1999.822164">https://doi.org/10.1109/iecon.1999.822164</a>.
  ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Negative differential
    resistance in ultrashort bulk MOSFETs,” 2003, doi: <a href="https://doi.org/10.1109/iecon.1999.822164">10.1109/iecon.1999.822164</a>.'
  mla: Wirth, G., et al. “Negative Differential Resistance in Ultrashort Bulk MOSFETs.”
    <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial
    Electronics Society (Cat. No.99CH37029)</i>, IEEE, 2003, doi:<a href="https://doi.org/10.1109/iecon.1999.822164">10.1109/iecon.1999.822164</a>.
  short: 'G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, in: IECON’99. Conference
    Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society
    (Cat. No.99CH37029), IEEE, 2003.'
date_created: 2023-01-25T09:11:30Z
date_updated: 2023-03-21T09:59:36Z
department:
- _id: '59'
doi: 10.1109/iecon.1999.822164
language:
- iso: eng
publication: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE
  Industrial Electronics Society (Cat. No.99CH37029)
publication_status: published
publisher: IEEE
status: public
title: Negative differential resistance in ultrashort bulk MOSFETs
type: conference
user_id: '20179'
year: '2003'
...
---
_id: '39851'
author:
- first_name: Ch.
  full_name: Pannemann, Ch.
  last_name: Pannemann
- first_name: T.
  full_name: Diekmann, T.
  last_name: Diekmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film
    transistors with Pentacene. <i>Microelectronic Engineering</i>. 2003;67-68:845-852.
    doi:<a href="https://doi.org/10.1016/s0167-9317(03)00146-1">10.1016/s0167-9317(03)00146-1</a>
  apa: Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2003). Nanometer scale
    organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>,
    <i>67–68</i>, 845–852. <a href="https://doi.org/10.1016/s0167-9317(03)00146-1">https://doi.org/10.1016/s0167-9317(03)00146-1</a>
  bibtex: '@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale
    organic thin film transistors with Pentacene}, volume={67–68}, DOI={<a href="https://doi.org/10.1016/s0167-9317(03)00146-1">10.1016/s0167-9317(03)00146-1</a>},
    journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann,
    Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852}
    }'
  chicago: 'Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale
    Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i>
    67–68 (2003): 845–52. <a href="https://doi.org/10.1016/s0167-9317(03)00146-1">https://doi.org/10.1016/s0167-9317(03)00146-1</a>.'
  ieee: 'Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic
    thin film transistors with Pentacene,” <i>Microelectronic Engineering</i>, vol.
    67–68, pp. 845–852, 2003, doi: <a href="https://doi.org/10.1016/s0167-9317(03)00146-1">10.1016/s0167-9317(03)00146-1</a>.'
  mla: Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with
    Pentacene.” <i>Microelectronic Engineering</i>, vol. 67–68, Elsevier BV, 2003,
    pp. 845–52, doi:<a href="https://doi.org/10.1016/s0167-9317(03)00146-1">10.1016/s0167-9317(03)00146-1</a>.
  short: Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering
    67–68 (2003) 845–852.
date_created: 2023-01-25T08:39:40Z
date_updated: 2023-03-21T10:04:43Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(03)00146-1
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 845-852
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Nanometer scale organic thin film transistors with Pentacene
type: journal_article
user_id: '20179'
volume: 67-68
year: '2003'
...
---
_id: '39904'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides,
    photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE Transactions on Electron
    Devices</i>. 2002;42(5):841-846. doi:<a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>'
  apa: 'Hilleringmann, U., &#38; Goser, K. (2002). Optoelectronic system integration
    on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE
    Transactions on Electron Devices</i>, <i>42</i>(5), 841–846. <a href="https://doi.org/10.1109/16.381978">https://doi.org/10.1109/16.381978</a>'
  bibtex: '@article{Hilleringmann_Goser_2002, title={Optoelectronic system integration
    on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip}, volume={42},
    DOI={<a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>}, number={5},
    journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical
    and Electronics Engineers (IEEE)}, author={Hilleringmann, Ulrich and Goser, K.},
    year={2002}, pages={841–846} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration
    on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE
    Transactions on Electron Devices</i> 42, no. 5 (2002): 841–46. <a href="https://doi.org/10.1109/16.381978">https://doi.org/10.1109/16.381978</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Optoelectronic system integration on silicon:
    waveguides, photodetectors, and VLSI CMOS circuits on one chip,” <i>IEEE Transactions
    on Electron Devices</i>, vol. 42, no. 5, pp. 841–846, 2002, doi: <a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>.'
  mla: 'Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on
    Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE
    Transactions on Electron Devices</i>, vol. 42, no. 5, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 841–46, doi:<a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>.'
  short: U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices 42 (2002)
    841–846.
date_created: 2023-01-25T09:22:34Z
date_updated: 2023-03-21T09:51:52Z
department:
- _id: '59'
doi: 10.1109/16.381978
intvolume: '        42'
issue: '5'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 841-846
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: 'Optoelectronic system integration on silicon: waveguides, photodetectors,
  and VLSI CMOS circuits on one chip'
type: journal_article
user_id: '20179'
volume: 42
year: '2002'
...
---
_id: '39912'
author:
- first_name: I.
  full_name: Schönstein, I.
  last_name: Schönstein
- first_name: J.
  full_name: Müller, J.
  last_name: Müller
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron
    NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>.
    2002;21(1-4):363-366. doi:<a href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>
  apa: Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization
    of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>,
    <i>21</i>(1–4), 363–366. <a href="https://doi.org/10.1016/0167-9317(93)90092-j">https://doi.org/10.1016/0167-9317(93)90092-j</a>
  bibtex: '@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization
    of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a
    href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.},
    year={2002}, pages={363–366} }'
  chicago: 'Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization
    of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>
    21, no. 1–4 (2002): 363–66. <a href="https://doi.org/10.1016/0167-9317(93)90092-j">https://doi.org/10.1016/0167-9317(93)90092-j</a>.'
  ieee: 'I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization
    of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>,
    vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>.'
  mla: Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible
    Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier
    BV, 2002, pp. 363–66, doi:<a href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>.
  short: I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering
    21 (2002) 363–366.
date_created: 2023-01-25T09:26:21Z
date_updated: 2023-03-21T09:50:03Z
department:
- _id: '59'
doi: 10.1016/0167-9317(93)90092-j
intvolume: '        21'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 363-366
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Characterization of submicron NMOS devices due to visible light emission
type: journal_article
user_id: '20179'
volume: 21
year: '2002'
...
---
_id: '39914'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:23Z
date_updated: 2023-03-21T09:49:25Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39906'
author:
- first_name: E.
  full_name: Brass, E.
  last_name: Brass
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices
    and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010.
    doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>
  apa: Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration
    of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State
    Circuits</i>, <i>29</i>(8), 1006–1010. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>
  bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration
    of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>},
    number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann,
    Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }'
  chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration
    of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State
    Circuits</i> 29, no. 8 (2002): 1006–10. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>.'
  ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical
    devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>,
    vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.'
  mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.”
    <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.
  short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits
    29 (2002) 1006–1010.
date_created: 2023-01-25T09:23:36Z
date_updated: 2023-03-21T09:51:19Z
department:
- _id: '59'
doi: 10.1109/4.297714
intvolume: '        29'
issue: '8'
keyword:
- Electrical and Electronic Engineering
language:
- iso: eng
page: 1006-1010
publication: IEEE Journal of Solid-State Circuits
publication_identifier:
  issn:
  - 0018-9200
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: System integration of optical devices and analog CMOS amplifiers
type: journal_article
user_id: '20179'
volume: 29
year: '2002'
...
---
_id: '39907'
author:
- first_name: E.
  full_name: Brass, E.
  last_name: Brass
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices
    and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010.
    doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>
  apa: Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration
    of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State
    Circuits</i>, <i>29</i>(8), 1006–1010. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>
  bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration
    of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>},
    number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann,
    Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }'
  chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration
    of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State
    Circuits</i> 29, no. 8 (2002): 1006–10. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>.'
  ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical
    devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>,
    vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.'
  mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.”
    <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.
  short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits
    29 (2002) 1006–1010.
date_created: 2023-01-25T09:24:15Z
date_updated: 2023-03-21T09:51:33Z
department:
- _id: '59'
doi: 10.1109/4.297714
intvolume: '        29'
issue: '8'
keyword:
- Electrical and Electronic Engineering
language:
- iso: eng
page: 1006-1010
publication: IEEE Journal of Solid-State Circuits
publication_identifier:
  issn:
  - 0018-9200
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: System integration of optical devices and analog CMOS amplifiers
type: journal_article
user_id: '20179'
volume: 29
year: '2002'
...