--- _id: '39899' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4 apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering, 30(1–4), 431–434. https://doi.org/10.1016/0167-9317(95)00280-4 bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={10.1016/0167-9317(95)00280-4}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }' chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” Microelectronic Engineering 30, no. 1–4 (2002): 431–34. https://doi.org/10.1016/0167-9317(95)00280-4.' ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” Microelectronic Engineering, vol. 30, no. 1–4, pp. 431–434, 2002, doi: 10.1016/0167-9317(95)00280-4.' mla: Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” Microelectronic Engineering, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:10.1016/0167-9317(95)00280-4. short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434. date_created: 2023-01-25T09:20:20Z date_updated: 2023-03-21T09:53:55Z department: - _id: '59' doi: 10.1016/0167-9317(95)00280-4 intvolume: ' 30' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 431-434 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique type: journal_article user_id: '20179' volume: 30 year: '2002' ... --- _id: '39925' author: - first_name: K. full_name: Goser, K. last_name: Goser - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: U. full_name: Rueckert, U. last_name: Rueckert - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985 apa: Goser, K., Hilleringmann, U., Rueckert, U., & Schumacher, K. (2002). VLSI technologies for artificial neural networks. IEEE Micro, 9(6), 28–44. https://doi.org/10.1109/40.42985 bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={10.1109/40.42985}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }' chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” IEEE Micro 9, no. 6 (2002): 28–44. https://doi.org/10.1109/40.42985.' ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” IEEE Micro, vol. 9, no. 6, pp. 28–44, 2002, doi: 10.1109/40.42985.' mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” IEEE Micro, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:10.1109/40.42985. short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44. date_created: 2023-01-25T09:33:18Z date_updated: 2023-03-21T09:57:17Z department: - _id: '59' doi: 10.1109/40.42985 intvolume: ' 9' issue: '6' keyword: - Electrical and Electronic Engineering - Hardware and Architecture - Software language: - iso: eng page: 28-44 publication: IEEE Micro publication_identifier: issn: - 0272-1732 publication_status: published publisher: Institute of Electrical and Electronics Engineers (IEEE) status: public title: VLSI technologies for artificial neural networks type: journal_article user_id: '20179' volume: 9 year: '2002' ... --- _id: '39882' author: - first_name: V. full_name: Mankowski, V. last_name: Mankowski - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1 apa: Mankowski, V., Hilleringmann, U., & Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering, 53(1–4), 525–528. https://doi.org/10.1016/s0167-9317(00)00370-1 bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={10.1016/s0167-9317(00)00370-1}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }' chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” Microelectronic Engineering 53, no. 1–4 (2002): 525–28. https://doi.org/10.1016/s0167-9317(00)00370-1.' ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 525–528, 2002, doi: 10.1016/s0167-9317(00)00370-1.' mla: Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:10.1016/s0167-9317(00)00370-1. short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528. date_created: 2023-01-25T09:10:13Z date_updated: 2023-03-21T10:00:06Z department: - _id: '59' doi: 10.1016/s0167-9317(00)00370-1 intvolume: ' 53' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 525-528 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV type: journal_article user_id: '20179' volume: 53 year: '2002' ... --- _id: '39879' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9 apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering, 53(1–4), 213–216. https://doi.org/10.1016/s0167-9317(00)00299-9 bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={10.1016/s0167-9317(00)00299-9}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }' chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” Microelectronic Engineering 53, no. 1–4 (2002): 213–16. https://doi.org/10.1016/s0167-9317(00)00299-9.' ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 213–216, 2002, doi: 10.1016/s0167-9317(00)00299-9.' mla: Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:10.1016/s0167-9317(00)00299-9. short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216. date_created: 2023-01-25T09:08:36Z date_updated: 2023-03-21T10:02:46Z department: - _id: '59' doi: 10.1016/s0167-9317(00)00299-9 intvolume: ' 53' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 213-216 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique type: journal_article user_id: '20179' volume: 53 year: '2002' ... --- _id: '39880' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: 'Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE; 2002. doi:10.1109/iecon.2000.972560' apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). https://doi.org/10.1109/iecon.2000.972560 bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={10.1109/iecon.2000.972560}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }' chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE, 2002. https://doi.org/10.1109/iecon.2000.972560. ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: 10.1109/iecon.2000.972560.' mla: Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002, doi:10.1109/iecon.2000.972560. short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.' date_created: 2023-01-25T09:09:18Z date_updated: 2023-03-21T10:02:30Z department: - _id: '59' doi: 10.1109/iecon.2000.972560 language: - iso: eng publication: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141) publication_status: published publisher: IEEE status: public title: Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique type: conference user_id: '20179' year: '2002' ... --- _id: '39881' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: 'Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE; 2002. doi:10.1109/iecon.2000.972560' apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). https://doi.org/10.1109/iecon.2000.972560 bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={10.1109/iecon.2000.972560}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }' chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE, 2002. https://doi.org/10.1109/iecon.2000.972560. ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: 10.1109/iecon.2000.972560.' mla: Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002, doi:10.1109/iecon.2000.972560. short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.' date_created: 2023-01-25T09:09:53Z date_updated: 2023-03-21T10:02:17Z department: - _id: '59' doi: 10.1109/iecon.2000.972560 language: - iso: eng publication: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141) publication_status: published publisher: IEEE status: public title: Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique type: conference user_id: '20179' year: '2002' ... --- _id: '39919' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Knospe, K. last_name: Knospe - first_name: C. full_name: Heite, C. last_name: Heite - first_name: K. full_name: Schumacher, K. last_name: Schumacher - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2 apa: Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., & Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering, 15(1–4), 289–292. https://doi.org/10.1016/0167-9317(91)90231-2 bibtex: '@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}, volume={15}, DOI={10.1016/0167-9317(91)90231-2}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}, year={2002}, pages={289–292} }' chicago: 'Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” Microelectronic Engineering 15, no. 1–4 (2002): 289–92. https://doi.org/10.1016/0167-9317(91)90231-2.' ieee: 'U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” Microelectronic Engineering, vol. 15, no. 1–4, pp. 289–292, 2002, doi: 10.1016/0167-9317(91)90231-2.' mla: Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” Microelectronic Engineering, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:10.1016/0167-9317(91)90231-2. short: U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292. date_created: 2023-01-25T09:29:32Z date_updated: 2023-03-22T10:29:08Z department: - _id: '59' doi: 10.1016/0167-9317(91)90231-2 intvolume: ' 15' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 289-292 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits type: journal_article user_id: '20179' volume: 15 year: '2002' ... --- _id: '39926' author: - first_name: K. full_name: Goser, K. last_name: Goser - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: U. full_name: Rueckert, U. last_name: Rueckert - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985 apa: Goser, K., Hilleringmann, U., Rueckert, U., & Schumacher, K. (2002). VLSI technologies for artificial neural networks. IEEE Micro, 9(6), 28–44. https://doi.org/10.1109/40.42985 bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={10.1109/40.42985}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }' chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” IEEE Micro 9, no. 6 (2002): 28–44. https://doi.org/10.1109/40.42985.' ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” IEEE Micro, vol. 9, no. 6, pp. 28–44, 2002, doi: 10.1109/40.42985.' mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” IEEE Micro, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:10.1109/40.42985. short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44. date_created: 2023-01-25T09:33:50Z date_updated: 2023-03-22T10:36:45Z department: - _id: '59' doi: 10.1109/40.42985 intvolume: ' 9' issue: '6' keyword: - Electrical and Electronic Engineering - Hardware and Architecture - Software language: - iso: eng page: 28-44 publication: IEEE Micro publication_identifier: issn: - 0272-1732 publication_status: published publisher: Institute of Electrical and Electronics Engineers (IEEE) status: public title: VLSI technologies for artificial neural networks type: journal_article user_id: '20179' volume: 9 year: '2002' ... --- _id: '39892' author: - first_name: F. full_name: Blum, F. last_name: Blum - first_name: A. full_name: Denisenko, A. last_name: Denisenko - first_name: R. full_name: Job, R. last_name: Job - first_name: D. full_name: Borchert, D. last_name: Borchert - first_name: W. full_name: Weber, W. last_name: Weber - first_name: J.V. full_name: Borany, J.V. last_name: Borany - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: W.R. full_name: Fahrner, W.R. last_name: Fahrner citation: ama: 'Blum F, Denisenko A, Job R, et al. Nuclear radiation detectors on various type diamonds. In: IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200). IEEE; 2002. doi:10.1109/iecon.1998.724097' apa: Blum, F., Denisenko, A., Job, R., Borchert, D., Weber, W., Borany, J. V., Hilleringmann, U., & Fahrner, W. R. (2002). Nuclear radiation detectors on various type diamonds. IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200). https://doi.org/10.1109/iecon.1998.724097 bibtex: '@inproceedings{Blum_Denisenko_Job_Borchert_Weber_Borany_Hilleringmann_Fahrner_2002, title={Nuclear radiation detectors on various type diamonds}, DOI={10.1109/iecon.1998.724097}, booktitle={IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)}, publisher={IEEE}, author={Blum, F. and Denisenko, A. and Job, R. and Borchert, D. and Weber, W. and Borany, J.V. and Hilleringmann, Ulrich and Fahrner, W.R.}, year={2002} }' chicago: Blum, F., A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, Ulrich Hilleringmann, and W.R. Fahrner. “Nuclear Radiation Detectors on Various Type Diamonds.” In IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200). IEEE, 2002. https://doi.org/10.1109/iecon.1998.724097. ieee: 'F. Blum et al., “Nuclear radiation detectors on various type diamonds,” 2002, doi: 10.1109/iecon.1998.724097.' mla: Blum, F., et al. “Nuclear Radiation Detectors on Various Type Diamonds.” IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002, doi:10.1109/iecon.1998.724097. short: 'F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, U. Hilleringmann, W.R. Fahrner, in: IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002.' date_created: 2023-01-25T09:15:11Z date_updated: 2023-03-22T10:38:37Z department: - _id: '59' doi: 10.1109/iecon.1998.724097 language: - iso: eng publication: IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200) publication_status: published publisher: IEEE status: public title: Nuclear radiation detectors on various type diamonds type: conference user_id: '20179' year: '2002' ... --- _id: '39920' author: - first_name: A. full_name: Soennecken, A. last_name: Soennecken - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s apa: Soennecken, A., Hilleringmann, U., & Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering, 15(1–4), 633–636. https://doi.org/10.1016/0167-9317(91)90299-s bibtex: '@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={10.1016/0167-9317(91)90299-s}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }' chicago: 'Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” Microelectronic Engineering 15, no. 1–4 (2002): 633–36. https://doi.org/10.1016/0167-9317(91)90299-s.' ieee: 'A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” Microelectronic Engineering, vol. 15, no. 1–4, pp. 633–636, 2002, doi: 10.1016/0167-9317(91)90299-s.' mla: Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” Microelectronic Engineering, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:10.1016/0167-9317(91)90299-s. short: A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636. date_created: 2023-01-25T09:29:53Z date_updated: 2023-03-21T09:47:17Z department: - _id: '59' doi: 10.1016/0167-9317(91)90299-s intvolume: ' 15' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 633-636 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica type: journal_article user_id: '20179' volume: 15 year: '2002' ... --- _id: '39915' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q apa: Hilleringmann, U., & Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214. https://doi.org/10.1016/0167-9317(92)90425-q bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={10.1016/0167-9317(92)90425-q}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }' chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic Engineering 19, no. 1–4 (2002): 211–14. https://doi.org/10.1016/0167-9317(92)90425-q.' ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi: 10.1016/0167-9317(92)90425-q.' mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:10.1016/0167-9317(92)90425-q. short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214. date_created: 2023-01-25T09:27:51Z date_updated: 2023-03-21T09:49:09Z department: - _id: '59' doi: 10.1016/0167-9317(92)90425-q intvolume: ' 19' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 211-214 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon type: journal_article user_id: '20179' volume: 19 year: '2002' ... --- _id: '39916' author: - first_name: S. full_name: Adams, S. last_name: Adams - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v apa: Adams, S., Hilleringmann, U., & Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering, 19(1–4), 191–194. https://doi.org/10.1016/0167-9317(92)90420-v bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={10.1016/0167-9317(92)90420-v}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }' chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” Microelectronic Engineering 19, no. 1–4 (2002): 191–94. https://doi.org/10.1016/0167-9317(92)90420-v.' ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 191–194, 2002, doi: 10.1016/0167-9317(92)90420-v.' mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:10.1016/0167-9317(92)90420-v. short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194. date_created: 2023-01-25T09:28:16Z date_updated: 2023-03-21T09:48:55Z department: - _id: '59' doi: 10.1016/0167-9317(92)90420-v intvolume: ' 19' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 191-194 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: CMOS compatible micromachining by dry silicon-etching techniques type: journal_article user_id: '20179' volume: 19 year: '2002' ... --- _id: '39348' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K.F. full_name: Goser, K.F. last_name: Goser citation: ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845 apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices, 45(1), 299–306. https://doi.org/10.1109/16.658845 bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={10.1109/16.658845}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }' chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” IEEE Transactions on Electron Devices 45, no. 1 (2002): 299–306. https://doi.org/10.1109/16.658845.' ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 299–306, 2002, doi: 10.1109/16.658845.' mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” IEEE Transactions on Electron Devices, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:10.1109/16.658845. short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306. date_created: 2023-01-24T09:23:56Z date_updated: 2023-03-21T09:45:40Z department: - _id: '59' doi: 10.1109/16.658845 intvolume: ' 45' issue: '1' keyword: - Electrical and Electronic Engineering - Electronic - Optical and Magnetic Materials language: - iso: eng page: 299-306 publication: IEEE Transactions on Electron Devices publication_identifier: issn: - 0018-9383 publication_status: published publisher: Institute of Electrical and Electronics Engineers (IEEE) status: public title: Matching analysis of deposition defined 50-nm MOSFET's type: journal_article user_id: '20179' volume: 45 year: '2002' ... --- _id: '39923' author: - first_name: K. full_name: Goser, K. last_name: Goser - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: U. full_name: Rueckert, U. last_name: Rueckert citation: ama: 'Goser K, Hilleringmann U, Rueckert U. Applications and implementations of neural networks in microelectronics-overview and status. In: [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications. IEEE Comput. Soc. Press; 2002. doi:10.1109/cmpeur.1991.257442' apa: Goser, K., Hilleringmann, U., & Rueckert, U. (2002). Applications and implementations of neural networks in microelectronics-overview and status. [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications. https://doi.org/10.1109/cmpeur.1991.257442 bibtex: '@inproceedings{Goser_Hilleringmann_Rueckert_2002, title={Applications and implementations of neural networks in microelectronics-overview and status}, DOI={10.1109/cmpeur.1991.257442}, booktitle={[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications}, publisher={IEEE Comput. Soc. Press}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.}, year={2002} }' chicago: Goser, K., Ulrich Hilleringmann, and U. Rueckert. “Applications and Implementations of Neural Networks in Microelectronics-Overview and Status.” In [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications. IEEE Comput. Soc. Press, 2002. https://doi.org/10.1109/cmpeur.1991.257442. ieee: 'K. Goser, U. Hilleringmann, and U. Rueckert, “Applications and implementations of neural networks in microelectronics-overview and status,” 2002, doi: 10.1109/cmpeur.1991.257442.' mla: Goser, K., et al. “Applications and Implementations of Neural Networks in Microelectronics-Overview and Status.” [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press, 2002, doi:10.1109/cmpeur.1991.257442. short: 'K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press, 2002.' date_created: 2023-01-25T09:31:42Z date_updated: 2023-03-21T09:46:40Z department: - _id: '59' doi: 10.1109/cmpeur.1991.257442 language: - iso: eng publication: '[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications' publication_status: published publisher: IEEE Comput. Soc. Press status: public title: Applications and implementations of neural networks in microelectronics-overview and status type: conference user_id: '20179' year: '2002' ... --- _id: '39889' author: - first_name: V. full_name: Mankowski, V. last_name: Mankowski - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering. 2002;46(1-4):413-417. doi:10.1016/s0167-9317(99)00122-7 apa: Mankowski, V., Hilleringmann, U., & Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering, 46(1–4), 413–417. https://doi.org/10.1016/s0167-9317(99)00122-7 bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={10.1016/s0167-9317(99)00122-7}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }' chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” Microelectronic Engineering 46, no. 1–4 (2002): 413–17. https://doi.org/10.1016/s0167-9317(99)00122-7.' ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” Microelectronic Engineering, vol. 46, no. 1–4, pp. 413–417, 2002, doi: 10.1016/s0167-9317(99)00122-7.' mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” Microelectronic Engineering, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:10.1016/s0167-9317(99)00122-7. short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417. date_created: 2023-01-25T09:13:17Z date_updated: 2023-03-21T09:58:35Z department: - _id: '59' doi: 10.1016/s0167-9317(99)00122-7 intvolume: ' 46' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 413-417 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: 12 kV low current cascaded light triggered switch on one silicon chip type: journal_article user_id: '20179' volume: 46 year: '2002' ... --- _id: '39891' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K.F. full_name: Goser, K.F. last_name: Goser citation: ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845 apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices, 45(1), 299–306. https://doi.org/10.1109/16.658845 bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={10.1109/16.658845}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }' chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” IEEE Transactions on Electron Devices 45, no. 1 (2002): 299–306. https://doi.org/10.1109/16.658845.' ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 299–306, 2002, doi: 10.1109/16.658845.' mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” IEEE Transactions on Electron Devices, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:10.1109/16.658845. short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306. date_created: 2023-01-25T09:14:43Z date_updated: 2023-03-21T09:58:01Z department: - _id: '59' doi: 10.1109/16.658845 intvolume: ' 45' issue: '1' keyword: - Electrical and Electronic Engineering - Electronic - Optical and Magnetic Materials language: - iso: eng page: 299-306 publication: IEEE Transactions on Electron Devices publication_identifier: issn: - 0018-9383 publication_status: published publisher: Institute of Electrical and Electronics Engineers (IEEE) status: public title: Matching analysis of deposition defined 50-nm MOSFET's type: journal_article user_id: '20179' volume: 45 year: '2002' ... --- _id: '39886' author: - first_name: G full_name: Wirth, G last_name: Wirth - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: J.T full_name: Horstmann, J.T last_name: Horstmann - first_name: K full_name: Goser, K last_name: Goser citation: ama: Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. Solid-State Electronics. 2002;43(7):1245-1250. doi:10.1016/s0038-1101(99)00060-x apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., & Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. Solid-State Electronics, 43(7), 1245–1250. https://doi.org/10.1016/s0038-1101(99)00060-x bibtex: '@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={10.1016/s0038-1101(99)00060-x}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250} }' chicago: 'Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” Solid-State Electronics 43, no. 7 (2002): 1245–50. https://doi.org/10.1016/s0038-1101(99)00060-x.' ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” Solid-State Electronics, vol. 43, no. 7, pp. 1245–1250, 2002, doi: 10.1016/s0038-1101(99)00060-x.' mla: Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” Solid-State Electronics, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50, doi:10.1016/s0038-1101(99)00060-x. short: G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250. date_created: 2023-01-25T09:11:50Z date_updated: 2023-03-21T09:59:22Z department: - _id: '59' doi: 10.1016/s0038-1101(99)00060-x intvolume: ' 43' issue: '7' keyword: - Materials Chemistry - Electrical and Electronic Engineering - Condensed Matter Physics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 1245-1250 publication: Solid-State Electronics publication_identifier: issn: - 0038-1101 publication_status: published publisher: Elsevier BV status: public title: Mesoscopic transport phenomena in ultrashort channel MOSFETs type: journal_article user_id: '20179' volume: 43 year: '2002' ... --- _id: '39876' author: - first_name: R. full_name: Otterbach, R. last_name: Otterbach - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: T.J. full_name: Horstmann, T.J. last_name: Horstmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. Diamond and Related Materials. 2002;10(3-7):511-514. doi:10.1016/s0925-9635(01)00373-9 apa: Otterbach, R., Hilleringmann, U., Horstmann, T. J., & Goser, K. (2002). Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. Diamond and Related Materials, 10(3–7), 511–514. https://doi.org/10.1016/s0925-9635(01)00373-9 bibtex: '@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}, volume={10}, DOI={10.1016/s0925-9635(01)00373-9}, number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}, year={2002}, pages={511–514} }' chicago: 'Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” Diamond and Related Materials 10, no. 3–7 (2002): 511–14. https://doi.org/10.1016/s0925-9635(01)00373-9.' ieee: 'R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,” Diamond and Related Materials, vol. 10, no. 3–7, pp. 511–514, 2002, doi: 10.1016/s0925-9635(01)00373-9.' mla: Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” Diamond and Related Materials, vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:10.1016/s0925-9635(01)00373-9. short: R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514. date_created: 2023-01-25T09:07:37Z date_updated: 2023-03-21T10:03:16Z department: - _id: '59' doi: 10.1016/s0925-9635(01)00373-9 intvolume: ' 10' issue: 3-7 keyword: - Electrical and Electronic Engineering - Materials Chemistry - Mechanical Engineering - General Chemistry - Electronic - Optical and Magnetic Materials language: - iso: eng page: 511-514 publication: Diamond and Related Materials publication_identifier: issn: - 0925-9635 publication_status: published publisher: Elsevier BV status: public title: Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications type: journal_article user_id: '20179' volume: 10 year: '2002' ... --- _id: '39877' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: T. full_name: Vieregge, T. last_name: Vieregge - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann citation: ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4 apa: Hilleringmann, U., Vieregge, T., & Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering, 53(1–4), 569–572. https://doi.org/10.1016/s0167-9317(00)00380-4 bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={10.1016/s0167-9317(00)00380-4}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }' chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” Microelectronic Engineering 53, no. 1–4 (2002): 569–72. https://doi.org/10.1016/s0167-9317(00)00380-4.' ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 569–572, 2002, doi: 10.1016/s0167-9317(00)00380-4.' mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:10.1016/s0167-9317(00)00380-4. short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572. date_created: 2023-01-25T09:08:13Z date_updated: 2023-03-21T10:03:00Z department: - _id: '59' doi: 10.1016/s0167-9317(00)00380-4 intvolume: ' 53' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 569-572 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: A structure definition technique for 25 nm lines of silicon and related materials type: journal_article user_id: '20179' volume: 53 year: '2002' ... --- _id: '39874' author: - first_name: R. full_name: Otterbach, R. last_name: Otterbach - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. Diamond and Related Materials. 2002;11(3-6):841-844. doi:10.1016/s0925-9635(01)00703-8 apa: Otterbach, R., & Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. Diamond and Related Materials, 11(3–6), 841–844. https://doi.org/10.1016/s0925-9635(01)00703-8 bibtex: '@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}, volume={11}, DOI={10.1016/s0925-9635(01)00703-8}, number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844} }' chicago: 'Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” Diamond and Related Materials 11, no. 3–6 (2002): 841–44. https://doi.org/10.1016/s0925-9635(01)00703-8.' ieee: 'R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” Diamond and Related Materials, vol. 11, no. 3–6, pp. 841–844, 2002, doi: 10.1016/s0925-9635(01)00703-8.' mla: Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” Diamond and Related Materials, vol. 11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:10.1016/s0925-9635(01)00703-8. short: R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844. date_created: 2023-01-25T09:05:52Z date_updated: 2023-03-21T10:03:48Z department: - _id: '59' doi: 10.1016/s0925-9635(01)00703-8 intvolume: ' 11' issue: 3-6 keyword: - Electrical and Electronic Engineering - Materials Chemistry - Mechanical Engineering - General Chemistry - Electronic - Optical and Magnetic Materials language: - iso: eng page: 841-844 publication: Diamond and Related Materials publication_identifier: issn: - 0925-9635 publication_status: published publisher: Elsevier BV status: public title: Reactive ion etching of CVD-diamond for piezoresistive pressure sensors type: journal_article user_id: '20179' volume: 11 year: '2002' ...