---
_id: '39875'
abstract:
- lang: eng
  text: Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten
    der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten
    eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen
    zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als
    Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen
    von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben
    dienen.
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>.
    Vieweg+Teubner Verlag; 2002:131–151. doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>'
  apa: Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i>
    (pp. 131–151). Vieweg+Teubner Verlag. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>
  bibtex: '@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und
    Kontakte}, DOI={<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>},
    booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag},
    author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }'
  chicago: 'Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>,
    131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>.'
  ieee: 'U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>,
    Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.'
  mla: Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>,
    Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>.
  short: 'U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag,
    Wiesbaden, 2002, pp. 131–151.'
date_created: 2023-01-25T09:06:58Z
date_updated: 2023-03-21T10:03:35Z
department:
- _id: '59'
doi: 10.1007/978-3-322-94119-0_8
language:
- iso: eng
page: 131–151
place: Wiesbaden
publication: Silizium-Halbleitertechnologie
publication_identifier:
  isbn:
  - 978-3-322-94119-0
publisher: Vieweg+Teubner Verlag
status: public
title: Metallisierung und Kontakte
type: book_chapter
user_id: '20179'
year: '2002'
...
---
_id: '39884'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T
  full_name: Vieregge, T
  last_name: Vieregge
- first_name: JT
  full_name: Horstmann, JT
  last_name: Horstmann
citation:
  ama: 'Hilleringmann U, Vieregge T, Horstmann J. Nanometer Scale Lateral Structures
    of MOS Type Layers. In: <i>Proceedings Micro. Tec</i>. ; 2000:49–53.'
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. (2000). Nanometer Scale
    Lateral Structures of MOS Type Layers. <i>Proceedings Micro. Tec</i>, 49–53.
  bibtex: '@inproceedings{Hilleringmann_Vieregge_Horstmann_2000, title={Nanometer
    Scale Lateral Structures of MOS Type Layers}, booktitle={Proceedings Micro. tec},
    author={Hilleringmann, Ulrich and Vieregge, T and Horstmann, JT}, year={2000},
    pages={49–53} }'
  chicago: Hilleringmann, Ulrich, T Vieregge, and JT Horstmann. “Nanometer Scale Lateral
    Structures of MOS Type Layers.” In <i>Proceedings Micro. Tec</i>, 49–53, 2000.
  ieee: U. Hilleringmann, T. Vieregge, and J. Horstmann, “Nanometer Scale Lateral
    Structures of MOS Type Layers,” in <i>Proceedings Micro. tec</i>, 2000, pp. 49–53.
  mla: Hilleringmann, Ulrich, et al. “Nanometer Scale Lateral Structures of MOS Type
    Layers.” <i>Proceedings Micro. Tec</i>, 2000, pp. 49–53.
  short: 'U. Hilleringmann, T. Vieregge, J. Horstmann, in: Proceedings Micro. Tec,
    2000, pp. 49–53.'
date_created: 2023-01-25T09:10:42Z
date_updated: 2023-03-21T09:59:50Z
department:
- _id: '59'
language:
- iso: eng
page: 49–53
publication: Proceedings Micro. tec
status: public
title: Nanometer Scale Lateral Structures of MOS Type Layers
type: conference
user_id: '20179'
year: '2000'
...
---
_id: '39890'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Otterbach R, Hilleringmann U. High rate CVD-diamond etching for high temperature
    pressure sensor applications. In: <i>29th European Solid-State Device Research
    Conference</i>. Vol 1. ; 1999:320-323.'
  apa: Otterbach, R., &#38; Hilleringmann, U. (1999). High rate CVD-diamond etching
    for high temperature pressure sensor applications. <i>29th European Solid-State
    Device Research Conference</i>, <i>1</i>, 320–323.
  bibtex: '@inproceedings{Otterbach_Hilleringmann_1999, title={High rate CVD-diamond
    etching for high temperature pressure sensor applications}, volume={1}, booktitle={29th
    European Solid-State Device Research Conference}, author={Otterbach, R. and Hilleringmann,
    Ulrich}, year={1999}, pages={320–323} }'
  chicago: Otterbach, R., and Ulrich Hilleringmann. “High Rate CVD-Diamond Etching
    for High Temperature Pressure Sensor Applications.” In <i>29th European Solid-State
    Device Research Conference</i>, 1:320–23, 1999.
  ieee: R. Otterbach and U. Hilleringmann, “High rate CVD-diamond etching for high
    temperature pressure sensor applications,” in <i>29th European Solid-State Device
    Research Conference</i>, 1999, vol. 1, pp. 320–323.
  mla: Otterbach, R., and Ulrich Hilleringmann. “High Rate CVD-Diamond Etching for
    High Temperature Pressure Sensor Applications.” <i>29th European Solid-State Device
    Research Conference</i>, vol. 1, 1999, pp. 320–23.
  short: 'R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research
    Conference, 1999, pp. 320–323.'
date_created: 2023-01-25T09:14:01Z
date_updated: 2023-03-21T09:58:19Z
department:
- _id: '59'
intvolume: '         1'
language:
- iso: eng
page: 320-323
publication: 29th European Solid-State Device Research Conference
status: public
title: High rate CVD-diamond etching for high temperature pressure sensor applications
type: conference
user_id: '20179'
volume: 1
year: '1999'
...
---
_id: '39893'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Horstmann JT, Hilleringmann U, Goser K. Correlation Analysis of the Statistical
    Electrical Parameter Fluctuations in 50 nm MOS-Transistors. In: <i>28th European
    Solid-State Device Research Conference</i>. ; 1998:512-515.'
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (1998). Correlation Analysis
    of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors.
    <i>28th European Solid-State Device Research Conference</i>, 512–515.
  bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_1998, title={Correlation Analysis
    of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors},
    booktitle={28th European Solid-State Device Research Conference}, author={Horstmann,
    J.T. and Hilleringmann, Ulrich and Goser, K.}, year={1998}, pages={512–515} }'
  chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Correlation Analysis
    of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.”
    In <i>28th European Solid-State Device Research Conference</i>, 512–15, 1998.
  ieee: J. T. Horstmann, U. Hilleringmann, and K. Goser, “Correlation Analysis of
    the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors,” in
    <i>28th European Solid-State Device Research Conference</i>, 1998, pp. 512–515.
  mla: Horstmann, J. T., et al. “Correlation Analysis of the Statistical Electrical
    Parameter Fluctuations in 50 Nm MOS-Transistors.” <i>28th European Solid-State
    Device Research Conference</i>, 1998, pp. 512–15.
  short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State
    Device Research Conference, 1998, pp. 512–515.'
date_created: 2023-01-25T09:15:49Z
date_updated: 2023-03-21T09:57:47Z
department:
- _id: '59'
language:
- iso: eng
page: 512-515
publication: 28th European Solid-State Device Research Conference
status: public
title: Correlation Analysis of the Statistical Electrical Parameter Fluctuations in
  50 nm MOS-Transistors
type: conference
user_id: '20179'
year: '1998'
...
---
_id: '39896'
author:
- first_name: L.M.H.
  full_name: Heinrich, L.M.H.
  last_name: Heinrich
- first_name: J.
  full_name: Muller, J.
  last_name: Muller
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
- first_name: A.
  full_name: Holmes, A.
  last_name: Holmes
- first_name: Do-Hoon
  full_name: Hwang, Do-Hoon
  last_name: Hwang
- first_name: R.
  full_name: Stern, R.
  last_name: Stern
citation:
  ama: Heinrich LMH, Muller J, Hilleringmann U, et al. CMOS-compatible organic light-emitting
    diodes. <i>IEEE Transactions on Electron Devices</i>. 1997;44(8):1249-1252. doi:<a
    href="https://doi.org/10.1109/16.605463">10.1109/16.605463</a>
  apa: Heinrich, L. M. H., Muller, J., Hilleringmann, U., Goser, K. F., Holmes, A.,
    Hwang, D.-H., &#38; Stern, R. (1997). CMOS-compatible organic light-emitting diodes.
    <i>IEEE Transactions on Electron Devices</i>, <i>44</i>(8), 1249–1252. <a href="https://doi.org/10.1109/16.605463">https://doi.org/10.1109/16.605463</a>
  bibtex: '@article{Heinrich_Muller_Hilleringmann_Goser_Holmes_Hwang_Stern_1997, title={CMOS-compatible
    organic light-emitting diodes}, volume={44}, DOI={<a href="https://doi.org/10.1109/16.605463">10.1109/16.605463</a>},
    number={8}, journal={IEEE Transactions on Electron Devices}, author={Heinrich,
    L.M.H. and Muller, J. and Hilleringmann, Ulrich and Goser, K.F. and Holmes, A.
    and Hwang, Do-Hoon and Stern, R.}, year={1997}, pages={1249–1252} }'
  chicago: 'Heinrich, L.M.H., J. Muller, Ulrich Hilleringmann, K.F. Goser, A. Holmes,
    Do-Hoon Hwang, and R. Stern. “CMOS-Compatible Organic Light-Emitting Diodes.”
    <i>IEEE Transactions on Electron Devices</i> 44, no. 8 (1997): 1249–52. <a href="https://doi.org/10.1109/16.605463">https://doi.org/10.1109/16.605463</a>.'
  ieee: 'L. M. H. Heinrich <i>et al.</i>, “CMOS-compatible organic light-emitting
    diodes,” <i>IEEE Transactions on Electron Devices</i>, vol. 44, no. 8, pp. 1249–1252,
    1997, doi: <a href="https://doi.org/10.1109/16.605463">10.1109/16.605463</a>.'
  mla: Heinrich, L. M. H., et al. “CMOS-Compatible Organic Light-Emitting Diodes.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 44, no. 8, 1997, pp. 1249–52,
    doi:<a href="https://doi.org/10.1109/16.605463">10.1109/16.605463</a>.
  short: L.M.H. Heinrich, J. Muller, U. Hilleringmann, K.F. Goser, A. Holmes, D.-H.
    Hwang, R. Stern, IEEE Transactions on Electron Devices 44 (1997) 1249–1252.
date_created: 2023-01-25T09:17:03Z
date_updated: 2023-03-21T09:57:32Z
department:
- _id: '59'
doi: 10.1109/16.605463
intvolume: '        44'
issue: '8'
language:
- iso: eng
page: 1249-1252
publication: IEEE Transactions on Electron Devices
status: public
title: CMOS-compatible organic light-emitting diodes
type: journal_article
user_id: '20179'
volume: 44
year: '1997'
...
---
_id: '39902'
author:
- first_name: J.
  full_name: Muller, J.
  last_name: Muller
- first_name: G.
  full_name: Wirth, G.
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Muller J, Wirth G, Hilleringmann U, Goser K. Analyses of Sub 1/4-Micron MOS-Transistors
    by Visible Light Emission. In: <i>ESSDERC ’96: Proceedings of the 26th European
    Solid State Device Research Conference</i>. ; 1996:947-950.'
  apa: 'Muller, J., Wirth, G., Hilleringmann, U., &#38; Goser, K. (1996). Analyses
    of Sub 1/4-Micron MOS-Transistors by Visible Light Emission. <i>ESSDERC ’96: Proceedings
    of the 26th European Solid State Device Research Conference</i>, 947–950.'
  bibtex: '@inproceedings{Muller_Wirth_Hilleringmann_Goser_1996, title={Analyses of
    Sub 1/4-Micron MOS-Transistors by Visible Light Emission}, booktitle={ESSDERC
    ’96: Proceedings of the 26th European Solid State Device Research Conference},
    author={Muller, J. and Wirth, G. and Hilleringmann, Ulrich and Goser, K.}, year={1996},
    pages={947–950} }'
  chicago: 'Muller, J., G. Wirth, Ulrich Hilleringmann, and K. Goser. “Analyses of
    Sub 1/4-Micron MOS-Transistors by Visible Light Emission.” In <i>ESSDERC ’96:
    Proceedings of the 26th European Solid State Device Research Conference</i>, 947–50,
    1996.'
  ieee: 'J. Muller, G. Wirth, U. Hilleringmann, and K. Goser, “Analyses of Sub 1/4-Micron
    MOS-Transistors by Visible Light Emission,” in <i>ESSDERC ’96: Proceedings of
    the 26th European Solid State Device Research Conference</i>, 1996, pp. 947–950.'
  mla: 'Muller, J., et al. “Analyses of Sub 1/4-Micron MOS-Transistors by Visible
    Light Emission.” <i>ESSDERC ’96: Proceedings of the 26th European Solid State
    Device Research Conference</i>, 1996, pp. 947–50.'
  short: 'J. Muller, G. Wirth, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings
    of the 26th European Solid State Device Research Conference, 1996, pp. 947–950.'
date_created: 2023-01-25T09:21:38Z
date_updated: 2023-03-21T09:53:14Z
department:
- _id: '59'
language:
- iso: eng
page: 947-950
publication: 'ESSDERC ’96: Proceedings of the 26th European Solid State Device Research
  Conference'
status: public
title: Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission
type: conference
user_id: '20179'
year: '1996'
...
---
_id: '39900'
author:
- first_name: J. T.
  full_name: Horstmann, J. T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Horstmann JT, Hilleringmann U, Goser K. Characterization and Matching Analysis
    of 50 nm-NMOS-Transistors. In: <i>ESSDERC ’96: Proceedings of the 26th European
    Solid State Device Research Conference</i>. ; 1996:253-256.'
  apa: 'Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (1996). Characterization
    and Matching Analysis of 50 nm-NMOS-Transistors. <i>ESSDERC ’96: Proceedings of
    the 26th European Solid State Device Research Conference</i>, 253–256.'
  bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_1996, title={Characterization
    and Matching Analysis of 50 nm-NMOS-Transistors}, booktitle={ESSDERC ’96: Proceedings
    of the 26th European Solid State Device Research Conference}, author={Horstmann,
    J. T. and Hilleringmann, Ulrich and Goser, K.}, year={1996}, pages={253–256} }'
  chicago: 'Horstmann, J. T., Ulrich Hilleringmann, and K. Goser. “Characterization
    and Matching Analysis of 50 Nm-NMOS-Transistors.” In <i>ESSDERC ’96: Proceedings
    of the 26th European Solid State Device Research Conference</i>, 253–56, 1996.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterization and Matching
    Analysis of 50 nm-NMOS-Transistors,” in <i>ESSDERC ’96: Proceedings of the 26th
    European Solid State Device Research Conference</i>, 1996, pp. 253–256.'
  mla: 'Horstmann, J. T., et al. “Characterization and Matching Analysis of 50 Nm-NMOS-Transistors.”
    <i>ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference</i>,
    1996, pp. 253–56.'
  short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings
    of the 26th European Solid State Device Research Conference, 1996, pp. 253–256.'
date_created: 2023-01-25T09:20:58Z
date_updated: 2023-03-21T09:53:33Z
department:
- _id: '59'
language:
- iso: eng
page: 253-256
publication: 'ESSDERC ’96: Proceedings of the 26th European Solid State Device Research
  Conference'
status: public
title: Characterization and Matching Analysis of 50 nm-NMOS-Transistors
type: conference
user_id: '20179'
year: '1996'
...
---
_id: '39903'
author:
- first_name: JT
  full_name: Horstmann, JT
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: 'Horstmann J, Hilleringmann U, Goser K. ESSDERC’96, Bologna, Italy. In: <i>Conf.
    Dig</i>. Vol 253. ; 1996.'
  apa: Horstmann, J., Hilleringmann, U., &#38; Goser, K. (1996). ESSDERC’96, Bologna,
    Italy. <i>Conf. Dig</i>, <i>253</i>.
  bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_1996, title={ESSDERC’96, Bologna,
    Italy}, volume={253}, booktitle={Conf. Dig}, author={Horstmann, JT and Hilleringmann,
    Ulrich and Goser, K}, year={1996} }'
  chicago: Horstmann, JT, Ulrich Hilleringmann, and K Goser. “ESSDERC’96, Bologna,
    Italy.” In <i>Conf. Dig</i>, Vol. 253, 1996.
  ieee: J. Horstmann, U. Hilleringmann, and K. Goser, “ESSDERC’96, Bologna, Italy,”
    in <i>Conf. Dig</i>, 1996, vol. 253.
  mla: Horstmann, JT, et al. “ESSDERC’96, Bologna, Italy.” <i>Conf. Dig</i>, vol.
    253, 1996.
  short: 'J. Horstmann, U. Hilleringmann, K. Goser, in: Conf. Dig, 1996.'
date_created: 2023-01-25T09:22:04Z
date_updated: 2023-03-21T09:52:57Z
department:
- _id: '59'
intvolume: '       253'
language:
- iso: eng
publication: Conf. Dig
status: public
title: ESSDERC’96, Bologna, Italy
type: conference
user_id: '20179'
volume: 253
year: '1996'
...
---
_id: '39905'
author:
- first_name: J.
  full_name: Muller, J.
  last_name: Muller
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: A.
  full_name: Holmes, A.
  last_name: Holmes
- first_name: O.
  full_name: Gelsen, O.
  last_name: Gelsen
- first_name: R.
  full_name: Stern, R.
  last_name: Stern
citation:
  ama: 'Muller J, Mankowski V, Hilleringmann U, et al. Conjugated Polymers for CMOS
    Compatible Applications. In: <i>ESSDERC ’95: Proceedings of the 25th European
    Solid State Device Research Conference</i>. ; 1995:659-662.'
  apa: 'Muller, J., Mankowski, V., Hilleringmann, U., Goser, K., Holmes, A., Gelsen,
    O., &#38; Stern, R. (1995). Conjugated Polymers for CMOS Compatible Applications.
    <i>ESSDERC ’95: Proceedings of the 25th European Solid State Device Research Conference</i>,
    659–662.'
  bibtex: '@inproceedings{Muller_Mankowski_Hilleringmann_Goser_Holmes_Gelsen_Stern_1995,
    title={Conjugated Polymers for CMOS Compatible Applications}, booktitle={ESSDERC
    ’95: Proceedings of the 25th European Solid State Device Research Conference},
    author={Muller, J. and Mankowski, V. and Hilleringmann, Ulrich and Goser, K. and
    Holmes, A. and Gelsen, O. and Stern, R.}, year={1995}, pages={659–662} }'
  chicago: 'Muller, J., V. Mankowski, Ulrich Hilleringmann, K. Goser, A. Holmes, O.
    Gelsen, and R. Stern. “Conjugated Polymers for CMOS Compatible Applications.”
    In <i>ESSDERC ’95: Proceedings of the 25th European Solid State Device Research
    Conference</i>, 659–62, 1995.'
  ieee: 'J. Muller <i>et al.</i>, “Conjugated Polymers for CMOS Compatible Applications,”
    in <i>ESSDERC ’95: Proceedings of the 25th European Solid State Device Research
    Conference</i>, 1995, pp. 659–662.'
  mla: 'Muller, J., et al. “Conjugated Polymers for CMOS Compatible Applications.”
    <i>ESSDERC ’95: Proceedings of the 25th European Solid State Device Research Conference</i>,
    1995, pp. 659–62.'
  short: 'J. Muller, V. Mankowski, U. Hilleringmann, K. Goser, A. Holmes, O. Gelsen,
    R. Stern, in: ESSDERC ’95: Proceedings of the 25th European Solid State Device
    Research Conference, 1995, pp. 659–662.'
date_created: 2023-01-25T09:23:10Z
date_updated: 2023-03-21T09:52:38Z
department:
- _id: '59'
language:
- iso: eng
page: 659-662
publication: 'ESSDERC ’95: Proceedings of the 25th European Solid State Device Research
  Conference'
status: public
title: Conjugated Polymers for CMOS Compatible Applications
type: conference
user_id: '20179'
year: '1995'
...
---
_id: '39908'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: S.
  full_name: Adams, S.
  last_name: Adams
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Hilleringmann U, Adams S, Goser K. Micromechanic Pressure Sensors with Optical
    Readout and CMOS-Amplifiers on Silicon. In: <i>ESSDERC ’94: 24th European Solid
    State Device Research Conference</i>. ; 1994:387-390.'
  apa: 'Hilleringmann, U., Adams, S., &#38; Goser, K. (1994). Micromechanic Pressure
    Sensors with Optical Readout and CMOS-Amplifiers on Silicon. <i>ESSDERC ’94: 24th
    European Solid State Device Research Conference</i>, 387–390.'
  bibtex: '@inproceedings{Hilleringmann_Adams_Goser_1994, title={Micromechanic Pressure
    Sensors with Optical Readout and CMOS-Amplifiers on Silicon}, booktitle={ESSDERC
    ’94: 24th European Solid State Device Research Conference}, author={Hilleringmann,
    Ulrich and Adams, S. and Goser, K.}, year={1994}, pages={387–390} }'
  chicago: 'Hilleringmann, Ulrich, S. Adams, and K. Goser. “Micromechanic Pressure
    Sensors with Optical Readout and CMOS-Amplifiers on Silicon.” In <i>ESSDERC ’94:
    24th European Solid State Device Research Conference</i>, 387–90, 1994.'
  ieee: 'U. Hilleringmann, S. Adams, and K. Goser, “Micromechanic Pressure Sensors
    with Optical Readout and CMOS-Amplifiers on Silicon,” in <i>ESSDERC ’94: 24th
    European Solid State Device Research Conference</i>, 1994, pp. 387–390.'
  mla: 'Hilleringmann, Ulrich, et al. “Micromechanic Pressure Sensors with Optical
    Readout and CMOS-Amplifiers on Silicon.” <i>ESSDERC ’94: 24th European Solid State
    Device Research Conference</i>, 1994, pp. 387–90.'
  short: 'U. Hilleringmann, S. Adams, K. Goser, in: ESSDERC ’94: 24th European Solid
    State Device Research Conference, 1994, pp. 387–390.'
date_created: 2023-01-25T09:24:51Z
date_updated: 2023-03-21T09:51:04Z
department:
- _id: '59'
language:
- iso: eng
page: 387-390
publication: 'ESSDERC ’94: 24th European Solid State Device Research Conference'
status: public
title: Micromechanic Pressure Sensors with Optical Readout and CMOS-Amplifiers on
  Silicon
type: conference
user_id: '20179'
year: '1994'
...
---
_id: '39909'
author:
- first_name: E.
  full_name: Brab, E.
  last_name: Brab
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: 'Brab E, Hilleringmann U, Schumacher K. Monolithic System Integration of Optical
    Devices, Photodetectors and Analog Transimpedance CMOS Amplifiers. In: <i>ESSCIRC
    ’93: Nineteenth European Solid-State Circuits Conference</i>. Vol 1. ; 1993:242-245.'
  apa: 'Brab, E., Hilleringmann, U., &#38; Schumacher, K. (1993). Monolithic System
    Integration of Optical Devices, Photodetectors and Analog Transimpedance CMOS
    Amplifiers. <i>ESSCIRC ’93: Nineteenth European Solid-State Circuits Conference</i>,
    <i>1</i>, 242–245.'
  bibtex: '@inproceedings{Brab_Hilleringmann_Schumacher_1993, title={Monolithic System
    Integration of Optical Devices, Photodetectors and Analog Transimpedance CMOS
    Amplifiers}, volume={1}, booktitle={ESSCIRC ’93: Nineteenth European Solid-State
    Circuits Conference}, author={Brab, E. and Hilleringmann, Ulrich and Schumacher,
    K.}, year={1993}, pages={242–245} }'
  chicago: 'Brab, E., Ulrich Hilleringmann, and K. Schumacher. “Monolithic System
    Integration of Optical Devices, Photodetectors and Analog Transimpedance CMOS
    Amplifiers.” In <i>ESSCIRC ’93: Nineteenth European Solid-State Circuits Conference</i>,
    1:242–45, 1993.'
  ieee: 'E. Brab, U. Hilleringmann, and K. Schumacher, “Monolithic System Integration
    of Optical Devices, Photodetectors and Analog Transimpedance CMOS Amplifiers,”
    in <i>ESSCIRC ’93: Nineteenth European Solid-State Circuits Conference</i>, 1993,
    vol. 1, pp. 242–245.'
  mla: 'Brab, E., et al. “Monolithic System Integration of Optical Devices, Photodetectors
    and Analog Transimpedance CMOS Amplifiers.” <i>ESSCIRC ’93: Nineteenth European
    Solid-State Circuits Conference</i>, vol. 1, 1993, pp. 242–45.'
  short: 'E. Brab, U. Hilleringmann, K. Schumacher, in: ESSCIRC ’93: Nineteenth European
    Solid-State Circuits Conference, 1993, pp. 242–245.'
date_created: 2023-01-25T09:25:27Z
date_updated: 2023-03-21T09:50:51Z
department:
- _id: '59'
intvolume: '         1'
language:
- iso: eng
page: 242-245
publication: 'ESSCIRC ’93: Nineteenth European Solid-State Circuits Conference'
status: public
title: Monolithic System Integration of Optical Devices, Photodetectors and Analog
  Transimpedance CMOS Amplifiers
type: conference
user_id: '20179'
volume: 1
year: '1993'
...
---
_id: '39910'
author:
- first_name: I.
  full_name: Schonstein, I.
  last_name: Schonstein
- first_name: J.
  full_name: Muller, J.
  last_name: Muller
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Schonstein I, Muller J, Hilleringmann U, Goser K. Hot Carrier Monitoring in
    NMOS Transistors by Visible Light Emission. In: <i>ESSDERC ’93: 23rd European
    Solid State Device Research Conference</i>. ; 1993:421-424.'
  apa: 'Schonstein, I., Muller, J., Hilleringmann, U., &#38; Goser, K. (1993). Hot
    Carrier Monitoring in NMOS Transistors by Visible Light Emission. <i>ESSDERC ’93:
    23rd European Solid State Device Research Conference</i>, 421–424.'
  bibtex: '@inproceedings{Schonstein_Muller_Hilleringmann_Goser_1993, title={Hot Carrier
    Monitoring in NMOS Transistors by Visible Light Emission}, booktitle={ESSDERC
    ’93: 23rd European solid State Device Research Conference}, author={Schonstein,
    I. and Muller, J. and Hilleringmann, Ulrich and Goser, K.}, year={1993}, pages={421–424}
    }'
  chicago: 'Schonstein, I., J. Muller, Ulrich Hilleringmann, and K. Goser. “Hot Carrier
    Monitoring in NMOS Transistors by Visible Light Emission.” In <i>ESSDERC ’93:
    23rd European Solid State Device Research Conference</i>, 421–24, 1993.'
  ieee: 'I. Schonstein, J. Muller, U. Hilleringmann, and K. Goser, “Hot Carrier Monitoring
    in NMOS Transistors by Visible Light Emission,” in <i>ESSDERC ’93: 23rd European
    solid State Device Research Conference</i>, 1993, pp. 421–424.'
  mla: 'Schonstein, I., et al. “Hot Carrier Monitoring in NMOS Transistors by Visible
    Light Emission.” <i>ESSDERC ’93: 23rd European Solid State Device Research Conference</i>,
    1993, pp. 421–24.'
  short: 'I. Schonstein, J. Muller, U. Hilleringmann, K. Goser, in: ESSDERC ’93: 23rd
    European Solid State Device Research Conference, 1993, pp. 421–424.'
date_created: 2023-01-25T09:26:00Z
date_updated: 2023-03-21T09:50:23Z
department:
- _id: '59'
language:
- iso: eng
page: 421-424
publication: 'ESSDERC ’93: 23rd European solid State Device Research Conference'
status: public
title: Hot Carrier Monitoring in NMOS Transistors by Visible Light Emission
type: conference
user_id: '20179'
year: '1993'
...
---
_id: '39913'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: S
  full_name: Adam, S
  last_name: Adam
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: 'Hilleringmann U, Adam S, Goser K. Micromechanic pressure sensors with optical
    readout and CMOS-preamplifiers on one silicon chip: Processing and first results.
    In: <i>ESSDtRC’93</i>. ; 1993.'
  apa: 'Hilleringmann, U., Adam, S., &#38; Goser, K. (1993). Micromechanic pressure
    sensors with optical readout and CMOS-preamplifiers on one silicon chip: Processing
    and first results. <i>ESSDtRC’93</i>.'
  bibtex: '@inproceedings{Hilleringmann_Adam_Goser_1993, title={Micromechanic pressure
    sensors with optical readout and CMOS-preamplifiers on one silicon chip: Processing
    and first results}, booktitle={ESSDtRC’93}, author={Hilleringmann, Ulrich and
    Adam, S and Goser, K}, year={1993} }'
  chicago: 'Hilleringmann, Ulrich, S Adam, and K Goser. “Micromechanic Pressure Sensors
    with Optical Readout and CMOS-Preamplifiers on One Silicon Chip: Processing and
    First Results.” In <i>ESSDtRC’93</i>, 1993.'
  ieee: 'U. Hilleringmann, S. Adam, and K. Goser, “Micromechanic pressure sensors
    with optical readout and CMOS-preamplifiers on one silicon chip: Processing and
    first results,” 1993.'
  mla: 'Hilleringmann, Ulrich, et al. “Micromechanic Pressure Sensors with Optical
    Readout and CMOS-Preamplifiers on One Silicon Chip: Processing and First Results.”
    <i>ESSDtRC’93</i>, 1993.'
  short: 'U. Hilleringmann, S. Adam, K. Goser, in: ESSDtRC’93, 1993.'
date_created: 2023-01-25T09:26:44Z
date_updated: 2023-03-21T09:49:46Z
department:
- _id: '59'
language:
- iso: eng
publication: ESSDtRC’93
status: public
title: 'Micromechanic pressure sensors with optical readout and CMOS-preamplifiers
  on one silicon chip: Processing and first results'
type: conference
user_id: '20179'
year: '1993'
...
---
_id: '39917'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: S
  full_name: Adams, S
  last_name: Adams
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: 'Hilleringmann U, Adams S, Goser K. A Silicon Technology for Monolithic Integration
    of Optical Waveguides, Photodetectors and VLSI CMOS Circuits. In: <i>Proceedings
    ISSSE’92</i>. ; 1992:304–307.'
  apa: Hilleringmann, U., Adams, S., &#38; Goser, K. (1992). A Silicon Technology
    for Monolithic Integration of Optical Waveguides, Photodetectors and VLSI CMOS
    Circuits. <i>Proceedings ISSSE’92</i>, 304–307.
  bibtex: '@inproceedings{Hilleringmann_Adams_Goser_1992, title={A Silicon Technology
    for Monolithic Integration of Optical Waveguides, Photodetectors and VLSI CMOS
    Circuits}, booktitle={Proceedings ISSSE’92}, author={Hilleringmann, Ulrich and
    Adams, S and Goser, K}, year={1992}, pages={304–307} }'
  chicago: Hilleringmann, Ulrich, S Adams, and K Goser. “A Silicon Technology for
    Monolithic Integration of Optical Waveguides, Photodetectors and VLSI CMOS Circuits.”
    In <i>Proceedings ISSSE’92</i>, 304–307, 1992.
  ieee: U. Hilleringmann, S. Adams, and K. Goser, “A Silicon Technology for Monolithic
    Integration of Optical Waveguides, Photodetectors and VLSI CMOS Circuits,” in
    <i>Proceedings ISSSE’92</i>, 1992, pp. 304–307.
  mla: Hilleringmann, Ulrich, et al. “A Silicon Technology for Monolithic Integration
    of Optical Waveguides, Photodetectors and VLSI CMOS Circuits.” <i>Proceedings
    ISSSE’92</i>, 1992, pp. 304–307.
  short: 'U. Hilleringmann, S. Adams, K. Goser, in: Proceedings ISSSE’92, 1992, pp.
    304–307.'
date_created: 2023-01-25T09:28:41Z
date_updated: 2023-03-21T09:48:37Z
department:
- _id: '59'
language:
- iso: eng
page: 304–307
publication: Proceedings ISSSE’92
status: public
title: A Silicon Technology for Monolithic Integration of Optical Waveguides, Photodetectors
  and VLSI CMOS Circuits
type: conference
user_id: '20179'
year: '1992'
...
---
_id: '39918'
author:
- first_name: S
  full_name: Adams, S
  last_name: Adams
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: 'Adams S, Hilleringmann U, Goser K. Electrooptical coupling of waveguides and
    VLSI circuits integrated on one silicon chip. In: <i>EFOC LAN</i>. ; 1992:92–92.'
  apa: Adams, S., Hilleringmann, U., &#38; Goser, K. (1992). Electrooptical coupling
    of waveguides and VLSI circuits integrated on one silicon chip. <i>EFOC LAN</i>,
    92–92.
  bibtex: '@inproceedings{Adams_Hilleringmann_Goser_1992, title={Electrooptical coupling
    of waveguides and VLSI circuits integrated on one silicon chip}, booktitle={EFOC
    LAN}, author={Adams, S and Hilleringmann, Ulrich and Goser, K}, year={1992}, pages={92–92}
    }'
  chicago: Adams, S, Ulrich Hilleringmann, and K Goser. “Electrooptical Coupling of
    Waveguides and VLSI Circuits Integrated on One Silicon Chip.” In <i>EFOC LAN</i>,
    92–92, 1992.
  ieee: S. Adams, U. Hilleringmann, and K. Goser, “Electrooptical coupling of waveguides
    and VLSI circuits integrated on one silicon chip,” in <i>EFOC LAN</i>, 1992, pp.
    92–92.
  mla: Adams, S., et al. “Electrooptical Coupling of Waveguides and VLSI Circuits
    Integrated on One Silicon Chip.” <i>EFOC LAN</i>, 1992, pp. 92–92.
  short: 'S. Adams, U. Hilleringmann, K. Goser, in: EFOC LAN, 1992, pp. 92–92.'
date_created: 2023-01-25T09:29:06Z
date_updated: 2023-03-21T09:48:21Z
department:
- _id: '59'
language:
- iso: eng
page: 92–92
publication: EFOC LAN
status: public
title: Electrooptical coupling of waveguides and VLSI circuits integrated on one silicon
  chip
type: conference
user_id: '20179'
year: '1992'
...
---
_id: '39922'
abstract:
- lang: eng
  text: The paper gives an overview on some of the most important artificial neural
    networks and their implementation as integrated circuits. The performances of
    these networks are dicussed with regard to the potential of current and future
    technologies. The overview closes with some possible applications of neural networks
    in microelectronics.
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rückert, U.
  last_name: Rückert
citation:
  ama: 'Goser K, Hilleringmann U, Rückert U. Application and implementation of neural
    networks in microelectronics. In: Prieto A, ed. <i>Artificial Neural Networks</i>.
    Springer Berlin Heidelberg; 1991:243–259.'
  apa: Goser, K., Hilleringmann, U., &#38; Rückert, U. (1991). Application and implementation
    of neural networks in microelectronics. In A. Prieto (Ed.), <i>Artificial Neural
    Networks</i> (pp. 243–259). Springer Berlin Heidelberg.
  bibtex: '@inproceedings{Goser_Hilleringmann_Rückert_1991, place={Berlin, Heidelberg},
    title={Application and implementation of neural networks in microelectronics},
    booktitle={Artificial Neural Networks}, publisher={Springer Berlin Heidelberg},
    author={Goser, K. and Hilleringmann, Ulrich and Rückert, U.}, editor={Prieto,
    Alberto}, year={1991}, pages={243–259} }'
  chicago: 'Goser, K., Ulrich Hilleringmann, and U. Rückert. “Application and Implementation
    of Neural Networks in Microelectronics.” In <i>Artificial Neural Networks</i>,
    edited by Alberto Prieto, 243–259. Berlin, Heidelberg: Springer Berlin Heidelberg,
    1991.'
  ieee: K. Goser, U. Hilleringmann, and U. Rückert, “Application and implementation
    of neural networks in microelectronics,” in <i>Artificial Neural Networks</i>,
    1991, pp. 243–259.
  mla: Goser, K., et al. “Application and Implementation of Neural Networks in Microelectronics.”
    <i>Artificial Neural Networks</i>, edited by Alberto Prieto, Springer Berlin Heidelberg,
    1991, pp. 243–259.
  short: 'K. Goser, U. Hilleringmann, U. Rückert, in: A. Prieto (Ed.), Artificial
    Neural Networks, Springer Berlin Heidelberg, Berlin, Heidelberg, 1991, pp. 243–259.'
date_created: 2023-01-25T09:31:00Z
date_updated: 2023-03-21T09:46:58Z
department:
- _id: '59'
editor:
- first_name: Alberto
  full_name: Prieto, Alberto
  last_name: Prieto
language:
- iso: eng
page: 243–259
place: Berlin, Heidelberg
publication: Artificial Neural Networks
publication_identifier:
  isbn:
  - 978-3-540-38460-1
publisher: Springer Berlin Heidelberg
status: public
title: Application and implementation of neural networks in microelectronics
type: conference
user_id: '20179'
year: '1991'
...
