---
_id: '39478'
author:
- first_name: C
full_name: Hangmann, C
last_name: Hangmann
- first_name: T
full_name: Mager, T
last_name: Mager
- first_name: S
full_name: Khan, S
last_name: Khan
- first_name: C
full_name: Hedayat, C
last_name: Hedayat
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Hangmann C, Mager T, Khan S, Hedayat C, Hilleringmann U. Improved rf design
using precise 3d near-field measurements and near-field to far-field transformations.
In: Smart System Integration-International Conference and Exhibition on Integration
Issues of Miniaturized Systems. ; 2016.'
apa: Hangmann, C., Mager, T., Khan, S., Hedayat, C., & Hilleringmann, U. (2016).
Improved rf design using precise 3d near-field measurements and near-field to
far-field transformations. Smart System Integration-International Conference
and Exhibition on Integration Issues of Miniaturized Systems.
bibtex: '@inproceedings{Hangmann_Mager_Khan_Hedayat_Hilleringmann_2016, title={Improved
rf design using precise 3d near-field measurements and near-field to far-field
transformations}, booktitle={Smart System Integration-International Conference
and Exhibition on Integration Issues of Miniaturized Systems}, author={Hangmann,
C and Mager, T and Khan, S and Hedayat, C and Hilleringmann, Ulrich}, year={2016}
}'
chicago: Hangmann, C, T Mager, S Khan, C Hedayat, and Ulrich Hilleringmann. “Improved
Rf Design Using Precise 3d Near-Field Measurements and near-Field to Far-Field
Transformations.” In Smart System Integration-International Conference and
Exhibition on Integration Issues of Miniaturized Systems, 2016.
ieee: C. Hangmann, T. Mager, S. Khan, C. Hedayat, and U. Hilleringmann, “Improved
rf design using precise 3d near-field measurements and near-field to far-field
transformations,” 2016.
mla: Hangmann, C., et al. “Improved Rf Design Using Precise 3d Near-Field Measurements
and near-Field to Far-Field Transformations.” Smart System Integration-International
Conference and Exhibition on Integration Issues of Miniaturized Systems, 2016.
short: 'C. Hangmann, T. Mager, S. Khan, C. Hedayat, U. Hilleringmann, in: Smart
System Integration-International Conference and Exhibition on Integration Issues
of Miniaturized Systems, 2016.'
date_created: 2023-01-24T11:22:33Z
date_updated: 2023-03-22T10:14:14Z
department:
- _id: '59'
language:
- iso: eng
publication: Smart System Integration-International Conference and Exhibition on Integration
Issues of Miniaturized Systems
status: public
title: Improved rf design using precise 3d near-field measurements and near-field
to far-field transformations
type: conference
user_id: '20179'
year: '2016'
...
---
_id: '39456'
author:
- first_name: T.
full_name: Hett, T.
last_name: Hett
- first_name: S.
full_name: Krämmer, S.
last_name: Krämmer
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: H.
full_name: Kalt, H.
last_name: Kalt
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
citation:
ama: Hett T, Krämmer S, Hilleringmann U, Kalt H, Zrenner A. High-Q whispering gallery
microdisk resonators based on silicon oxynitride. Journal of Luminescence.
2016;191:131-134. doi:10.1016/j.jlumin.2016.11.016
apa: Hett, T., Krämmer, S., Hilleringmann, U., Kalt, H., & Zrenner, A. (2016).
High-Q whispering gallery microdisk resonators based on silicon oxynitride. Journal
of Luminescence, 191, 131–134. https://doi.org/10.1016/j.jlumin.2016.11.016
bibtex: '@article{Hett_Krämmer_Hilleringmann_Kalt_Zrenner_2016, title={High-Q whispering
gallery microdisk resonators based on silicon oxynitride}, volume={191}, DOI={10.1016/j.jlumin.2016.11.016},
journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Hett, T. and
Krämmer, S. and Hilleringmann, Ulrich and Kalt, H. and Zrenner, A.}, year={2016},
pages={131–134} }'
chicago: 'Hett, T., S. Krämmer, Ulrich Hilleringmann, H. Kalt, and A. Zrenner. “High-Q
Whispering Gallery Microdisk Resonators Based on Silicon Oxynitride.” Journal
of Luminescence 191 (2016): 131–34. https://doi.org/10.1016/j.jlumin.2016.11.016.'
ieee: 'T. Hett, S. Krämmer, U. Hilleringmann, H. Kalt, and A. Zrenner, “High-Q whispering
gallery microdisk resonators based on silicon oxynitride,” Journal of Luminescence,
vol. 191, pp. 131–134, 2016, doi: 10.1016/j.jlumin.2016.11.016.'
mla: Hett, T., et al. “High-Q Whispering Gallery Microdisk Resonators Based on Silicon
Oxynitride.” Journal of Luminescence, vol. 191, Elsevier BV, 2016, pp.
131–34, doi:10.1016/j.jlumin.2016.11.016.
short: T. Hett, S. Krämmer, U. Hilleringmann, H. Kalt, A. Zrenner, Journal of Luminescence
191 (2016) 131–134.
date_created: 2023-01-24T11:08:00Z
date_updated: 2023-03-22T10:19:46Z
department:
- _id: '59'
doi: 10.1016/j.jlumin.2016.11.016
intvolume: ' 191'
keyword:
- Condensed Matter Physics
- Biochemistry
- General Chemistry
- Atomic and Molecular Physics
- and Optics
- Biophysics
language:
- iso: eng
page: 131-134
publication: Journal of Luminescence
publication_identifier:
issn:
- 0022-2313
publication_status: published
publisher: Elsevier BV
status: public
title: High-Q whispering gallery microdisk resonators based on silicon oxynitride
type: journal_article
user_id: '20179'
volume: 191
year: '2016'
...
---
_id: '39479'
author:
- first_name: Fábio
full_name: Vidor, Fábio
last_name: Vidor
- first_name: Thorsten
full_name: Meyers, Thorsten
last_name: Meyers
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Vidor F, Meyers T, Hilleringmann U. Flexible Electronics: Integration Processes
for Organic and Inorganic Semiconductor-Based Thin-Film Transistors. Electronics.
2015;4(3):480-506. doi:10.3390/electronics4030480'
apa: 'Vidor, F., Meyers, T., & Hilleringmann, U. (2015). Flexible Electronics:
Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film
Transistors. Electronics, 4(3), 480–506. https://doi.org/10.3390/electronics4030480'
bibtex: '@article{Vidor_Meyers_Hilleringmann_2015, title={Flexible Electronics:
Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film
Transistors}, volume={4}, DOI={10.3390/electronics4030480},
number={3}, journal={Electronics}, publisher={MDPI AG}, author={Vidor, Fábio and
Meyers, Thorsten and Hilleringmann, Ulrich}, year={2015}, pages={480–506} }'
chicago: 'Vidor, Fábio, Thorsten Meyers, and Ulrich Hilleringmann. “Flexible Electronics:
Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film
Transistors.” Electronics 4, no. 3 (2015): 480–506. https://doi.org/10.3390/electronics4030480.'
ieee: 'F. Vidor, T. Meyers, and U. Hilleringmann, “Flexible Electronics: Integration
Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors,”
Electronics, vol. 4, no. 3, pp. 480–506, 2015, doi: 10.3390/electronics4030480.'
mla: 'Vidor, Fábio, et al. “Flexible Electronics: Integration Processes for Organic
and Inorganic Semiconductor-Based Thin-Film Transistors.” Electronics,
vol. 4, no. 3, MDPI AG, 2015, pp. 480–506, doi:10.3390/electronics4030480.'
short: F. Vidor, T. Meyers, U. Hilleringmann, Electronics 4 (2015) 480–506.
date_created: 2023-01-24T11:23:57Z
date_updated: 2023-03-21T10:16:23Z
department:
- _id: '59'
doi: 10.3390/electronics4030480
intvolume: ' 4'
issue: '3'
keyword:
- Electrical and Electronic Engineering
- Computer Networks and Communications
- Hardware and Architecture
- Signal Processing
- Control and Systems Engineering
language:
- iso: eng
page: 480-506
publication: Electronics
publication_identifier:
issn:
- 2079-9292
publication_status: published
publisher: MDPI AG
status: public
title: 'Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based
Thin-Film Transistors'
type: journal_article
user_id: '20179'
volume: 4
year: '2015'
...
---
_id: '39571'
author:
- first_name: K
full_name: Wolff, K
last_name: Wolff
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Wolff K, Hilleringmann U. Silicon Nanoparticles contacted by metal nanogaps
for FET applications. In: ; 2015.'
apa: Wolff, K., & Hilleringmann, U. (2015). Silicon Nanoparticles contacted
by metal nanogaps for FET applications.
bibtex: '@inproceedings{Wolff_Hilleringmann_2015, title={Silicon Nanoparticles contacted
by metal nanogaps for FET applications}, author={Wolff, K and Hilleringmann, Ulrich},
year={2015} }'
chicago: Wolff, K, and Ulrich Hilleringmann. “Silicon Nanoparticles Contacted by
Metal Nanogaps for FET Applications,” 2015.
ieee: K. Wolff and U. Hilleringmann, “Silicon Nanoparticles contacted by metal nanogaps
for FET applications,” 2015.
mla: Wolff, K., and Ulrich Hilleringmann. Silicon Nanoparticles Contacted by
Metal Nanogaps for FET Applications. 2015.
short: 'K. Wolff, U. Hilleringmann, in: 2015.'
date_created: 2023-01-24T12:20:31Z
date_updated: 2023-03-21T10:16:11Z
department:
- _id: '59'
extern: '1'
language:
- iso: eng
status: public
title: Silicon Nanoparticles contacted by metal nanogaps for FET applications
type: conference
user_id: '20179'
year: '2015'
...
---
_id: '39495'
author:
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: F.
full_name: Assion, F.
last_name: Assion
- first_name: F. F.
full_name: Vidor, F. F.
last_name: Vidor
- first_name: G. I.
full_name: Wirth, G. I.
last_name: Wirth
citation:
ama: Hilleringmann U, Assion F, Vidor FF, Wirth GI. Nanometer Scale Electronic Device
Integration Using Side-Wall Deposition and Etch-Back Technology. Journal of
Machine to Machine Communications. 2015;1(3):197-214. doi:10.13052/jmmc2246-137x.131
apa: Hilleringmann, U., Assion, F., Vidor, F. F., & Wirth, G. I. (2015). Nanometer
Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology.
Journal of Machine to Machine Communications, 1(3), 197–214. https://doi.org/10.13052/jmmc2246-137x.131
bibtex: '@article{Hilleringmann_Assion_Vidor_Wirth_2015, title={Nanometer Scale
Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology},
volume={1}, DOI={10.13052/jmmc2246-137x.131},
number={3}, journal={Journal of Machine to Machine Communications}, publisher={River
Publishers}, author={Hilleringmann, Ulrich and Assion, F. and Vidor, F. F. and
Wirth, G. I.}, year={2015}, pages={197–214} }'
chicago: 'Hilleringmann, Ulrich, F. Assion, F. F. Vidor, and G. I. Wirth. “Nanometer
Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology.”
Journal of Machine to Machine Communications 1, no. 3 (2015): 197–214.
https://doi.org/10.13052/jmmc2246-137x.131.'
ieee: 'U. Hilleringmann, F. Assion, F. F. Vidor, and G. I. Wirth, “Nanometer Scale
Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology,”
Journal of Machine to Machine Communications, vol. 1, no. 3, pp. 197–214,
2015, doi: 10.13052/jmmc2246-137x.131.'
mla: Hilleringmann, Ulrich, et al. “Nanometer Scale Electronic Device Integration
Using Side-Wall Deposition and Etch-Back Technology.” Journal of Machine to
Machine Communications, vol. 1, no. 3, River Publishers, 2015, pp. 197–214,
doi:10.13052/jmmc2246-137x.131.
short: U. Hilleringmann, F. Assion, F.F. Vidor, G.I. Wirth, Journal of Machine to
Machine Communications 1 (2015) 197–214.
date_created: 2023-01-24T11:40:14Z
date_updated: 2023-03-22T10:11:18Z
department:
- _id: '59'
doi: 10.13052/jmmc2246-137x.131
intvolume: ' 1'
issue: '3'
keyword:
- General Medicine
language:
- iso: eng
page: 197-214
publication: Journal of Machine to Machine Communications
publication_identifier:
issn:
- 2246-137X
publication_status: published
publisher: River Publishers
status: public
title: Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and
Etch-Back Technology
type: journal_article
user_id: '20179'
volume: 1
year: '2015'
...
---
_id: '39492'
author:
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: F.F.
full_name: Vidor, F.F.
last_name: Vidor
- first_name: F.
full_name: Assion, F.
last_name: Assion
citation:
ama: 'Hilleringmann U, Vidor FF, Assion F. Application of side-wall deposition and
etch-back technology for nanometer scale device integration. In: Proceedings
of the 2nd Pan African International Conference on Science, Computing and Telecommunications
(PACT 2014). IEEE; 2015. doi:10.1109/scat.2014.7055128'
apa: Hilleringmann, U., Vidor, F. F., & Assion, F. (2015). Application of side-wall
deposition and etch-back technology for nanometer scale device integration. Proceedings
of the 2nd Pan African International Conference on Science, Computing and Telecommunications
(PACT 2014). https://doi.org/10.1109/scat.2014.7055128
bibtex: '@inproceedings{Hilleringmann_Vidor_Assion_2015, title={Application of side-wall
deposition and etch-back technology for nanometer scale device integration}, DOI={10.1109/scat.2014.7055128},
booktitle={Proceedings of the 2nd Pan African International Conference on Science,
Computing and Telecommunications (PACT 2014)}, publisher={IEEE}, author={Hilleringmann,
Ulrich and Vidor, F.F. and Assion, F.}, year={2015} }'
chicago: Hilleringmann, Ulrich, F.F. Vidor, and F. Assion. “Application of Side-Wall
Deposition and Etch-Back Technology for Nanometer Scale Device Integration.” In
Proceedings of the 2nd Pan African International Conference on Science, Computing
and Telecommunications (PACT 2014). IEEE, 2015. https://doi.org/10.1109/scat.2014.7055128.
ieee: 'U. Hilleringmann, F. F. Vidor, and F. Assion, “Application of side-wall deposition
and etch-back technology for nanometer scale device integration,” 2015, doi: 10.1109/scat.2014.7055128.'
mla: Hilleringmann, Ulrich, et al. “Application of Side-Wall Deposition and Etch-Back
Technology for Nanometer Scale Device Integration.” Proceedings of the 2nd
Pan African International Conference on Science, Computing and Telecommunications
(PACT 2014), IEEE, 2015, doi:10.1109/scat.2014.7055128.
short: 'U. Hilleringmann, F.F. Vidor, F. Assion, in: Proceedings of the 2nd Pan
African International Conference on Science, Computing and Telecommunications
(PACT 2014), IEEE, 2015.'
date_created: 2023-01-24T11:37:19Z
date_updated: 2023-03-22T10:12:01Z
department:
- _id: '59'
doi: 10.1109/scat.2014.7055128
language:
- iso: eng
publication: Proceedings of the 2nd Pan African International Conference on Science,
Computing and Telecommunications (PACT 2014)
publication_status: published
publisher: IEEE
status: public
title: Application of side-wall deposition and etch-back technology for nanometer
scale device integration
type: conference
user_id: '20179'
year: '2015'
...
---
_id: '39490'
author:
- first_name: Christian
full_name: Hangmann, Christian
last_name: Hangmann
- first_name: Christian
full_name: Hedayat, Christian
last_name: Hedayat
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Hangmann C, Hedayat C, Hilleringmann U. Extended event-driven modeling of
a ΣΔ-fractional-N PLL including non-ideal effects. In: 2014 21st IEEE International
Conference on Electronics, Circuits and Systems (ICECS). IEEE; 2015. doi:10.1109/icecs.2014.7049931'
apa: Hangmann, C., Hedayat, C., & Hilleringmann, U. (2015). Extended event-driven
modeling of a ΣΔ-fractional-N PLL including non-ideal effects. 2014 21st IEEE
International Conference on Electronics, Circuits and Systems (ICECS). https://doi.org/10.1109/icecs.2014.7049931
bibtex: '@inproceedings{Hangmann_Hedayat_Hilleringmann_2015, title={Extended event-driven
modeling of a ΣΔ-fractional-N PLL including non-ideal effects}, DOI={10.1109/icecs.2014.7049931},
booktitle={2014 21st IEEE International Conference on Electronics, Circuits and
Systems (ICECS)}, publisher={IEEE}, author={Hangmann, Christian and Hedayat, Christian
and Hilleringmann, Ulrich}, year={2015} }'
chicago: Hangmann, Christian, Christian Hedayat, and Ulrich Hilleringmann. “Extended
Event-Driven Modeling of a ΣΔ-Fractional-N PLL Including Non-Ideal Effects.” In
2014 21st IEEE International Conference on Electronics, Circuits and Systems
(ICECS). IEEE, 2015. https://doi.org/10.1109/icecs.2014.7049931.
ieee: 'C. Hangmann, C. Hedayat, and U. Hilleringmann, “Extended event-driven modeling
of a ΣΔ-fractional-N PLL including non-ideal effects,” 2015, doi: 10.1109/icecs.2014.7049931.'
mla: Hangmann, Christian, et al. “Extended Event-Driven Modeling of a ΣΔ-Fractional-N
PLL Including Non-Ideal Effects.” 2014 21st IEEE International Conference on
Electronics, Circuits and Systems (ICECS), IEEE, 2015, doi:10.1109/icecs.2014.7049931.
short: 'C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2014 21st IEEE International
Conference on Electronics, Circuits and Systems (ICECS), IEEE, 2015.'
date_created: 2023-01-24T11:36:45Z
date_updated: 2023-03-22T10:12:22Z
department:
- _id: '59'
doi: 10.1109/icecs.2014.7049931
language:
- iso: eng
publication: 2014 21st IEEE International Conference on Electronics, Circuits and
Systems (ICECS)
publication_status: published
publisher: IEEE
status: public
title: Extended event-driven modeling of a ΣΔ-fractional-N PLL including non-ideal
effects
type: conference
user_id: '20179'
year: '2015'
...
---
_id: '39482'
author:
- first_name: C
full_name: Hangmann, C
last_name: Hangmann
- first_name: C
full_name: Hedayat, C
last_name: Hedayat
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Hangmann C, Hedayat C, Hilleringmann U. Fast and accurate event-driven simulation
of a mixed-signal system using the example of a PLL. In: Proc. Int. Conf. Exhib.
Integr. Issues Miniatured Syst. ; 2015.'
apa: Hangmann, C., Hedayat, C., & Hilleringmann, U. (2015). Fast and accurate
event-driven simulation of a mixed-signal system using the example of a PLL. Proc.
Int. Conf. Exhib. Integr. Issues Miniatured Syst.
bibtex: '@inproceedings{Hangmann_Hedayat_Hilleringmann_2015, title={Fast and accurate
event-driven simulation of a mixed-signal system using the example of a PLL},
booktitle={Proc. Int. Conf. Exhib. Integr. Issues Miniatured Syst.}, author={Hangmann,
C and Hedayat, C and Hilleringmann, Ulrich}, year={2015} }'
chicago: Hangmann, C, C Hedayat, and Ulrich Hilleringmann. “Fast and Accurate Event-Driven
Simulation of a Mixed-Signal System Using the Example of a PLL.” In Proc. Int.
Conf. Exhib. Integr. Issues Miniatured Syst., 2015.
ieee: C. Hangmann, C. Hedayat, and U. Hilleringmann, “Fast and accurate event-driven
simulation of a mixed-signal system using the example of a PLL,” 2015.
mla: Hangmann, C., et al. “Fast and Accurate Event-Driven Simulation of a Mixed-Signal
System Using the Example of a PLL.” Proc. Int. Conf. Exhib. Integr. Issues
Miniatured Syst., 2015.
short: 'C. Hangmann, C. Hedayat, U. Hilleringmann, in: Proc. Int. Conf. Exhib. Integr.
Issues Miniatured Syst., 2015.'
date_created: 2023-01-24T11:25:15Z
date_updated: 2023-03-22T10:14:47Z
department:
- _id: '59'
language:
- iso: eng
publication: Proc. Int. Conf. Exhib. Integr. Issues Miniatured Syst.
status: public
title: Fast and accurate event-driven simulation of a mixed-signal system using the
example of a PLL
type: conference
user_id: '20179'
year: '2015'
...
---
_id: '39483'
author:
- first_name: F.F.
full_name: Vidor, F.F.
last_name: Vidor
- first_name: G.I.
full_name: Wirth, G.I.
last_name: Wirth
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: Vidor FF, Wirth GI, Hilleringmann U. Low temperature fabrication of a ZnO nanoparticle
thin-film transistor suitable for flexible electronics. Microelectronics Reliability.
2014;54(12):2760-2765. doi:10.1016/j.microrel.2014.07.147
apa: Vidor, F. F., Wirth, G. I., & Hilleringmann, U. (2014). Low temperature
fabrication of a ZnO nanoparticle thin-film transistor suitable for flexible electronics.
Microelectronics Reliability, 54(12), 2760–2765. https://doi.org/10.1016/j.microrel.2014.07.147
bibtex: '@article{Vidor_Wirth_Hilleringmann_2014, title={Low temperature fabrication
of a ZnO nanoparticle thin-film transistor suitable for flexible electronics},
volume={54}, DOI={10.1016/j.microrel.2014.07.147},
number={12}, journal={Microelectronics Reliability}, publisher={Elsevier BV},
author={Vidor, F.F. and Wirth, G.I. and Hilleringmann, Ulrich}, year={2014}, pages={2760–2765}
}'
chicago: 'Vidor, F.F., G.I. Wirth, and Ulrich Hilleringmann. “Low Temperature Fabrication
of a ZnO Nanoparticle Thin-Film Transistor Suitable for Flexible Electronics.”
Microelectronics Reliability 54, no. 12 (2014): 2760–65. https://doi.org/10.1016/j.microrel.2014.07.147.'
ieee: 'F. F. Vidor, G. I. Wirth, and U. Hilleringmann, “Low temperature fabrication
of a ZnO nanoparticle thin-film transistor suitable for flexible electronics,”
Microelectronics Reliability, vol. 54, no. 12, pp. 2760–2765, 2014, doi:
10.1016/j.microrel.2014.07.147.'
mla: Vidor, F. F., et al. “Low Temperature Fabrication of a ZnO Nanoparticle Thin-Film
Transistor Suitable for Flexible Electronics.” Microelectronics Reliability,
vol. 54, no. 12, Elsevier BV, 2014, pp. 2760–65, doi:10.1016/j.microrel.2014.07.147.
short: F.F. Vidor, G.I. Wirth, U. Hilleringmann, Microelectronics Reliability 54
(2014) 2760–2765.
date_created: 2023-01-24T11:25:42Z
date_updated: 2023-03-22T10:15:06Z
department:
- _id: '59'
doi: 10.1016/j.microrel.2014.07.147
intvolume: ' 54'
issue: '12'
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Safety
- Risk
- Reliability and Quality
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 2760-2765
publication: Microelectronics Reliability
publication_identifier:
issn:
- 0026-2714
publication_status: published
publisher: Elsevier BV
status: public
title: Low temperature fabrication of a ZnO nanoparticle thin-film transistor suitable
for flexible electronics
type: journal_article
user_id: '20179'
volume: 54
year: '2014'
...
---
_id: '39484'
author:
- first_name: Christian
full_name: Hangmann, Christian
last_name: Hangmann
- first_name: Christian
full_name: Hedayat, Christian
last_name: Hedayat
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Hangmann C, Hedayat C, Hilleringmann U. Stability Analysis of a Charge Pump
Phase-Locked Loop Using Autonomous Difference Equations. IEEE Transactions
on Circuits and Systems I: Regular Papers. 2014;61(9):2569-2577. doi:10.1109/tcsi.2014.2333331'
apa: 'Hangmann, C., Hedayat, C., & Hilleringmann, U. (2014). Stability Analysis
of a Charge Pump Phase-Locked Loop Using Autonomous Difference Equations. IEEE
Transactions on Circuits and Systems I: Regular Papers, 61(9), 2569–2577.
https://doi.org/10.1109/tcsi.2014.2333331'
bibtex: '@article{Hangmann_Hedayat_Hilleringmann_2014, title={Stability Analysis
of a Charge Pump Phase-Locked Loop Using Autonomous Difference Equations}, volume={61},
DOI={10.1109/tcsi.2014.2333331},
number={9}, journal={IEEE Transactions on Circuits and Systems I: Regular Papers},
publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Hangmann,
Christian and Hedayat, Christian and Hilleringmann, Ulrich}, year={2014}, pages={2569–2577}
}'
chicago: 'Hangmann, Christian, Christian Hedayat, and Ulrich Hilleringmann. “Stability
Analysis of a Charge Pump Phase-Locked Loop Using Autonomous Difference Equations.”
IEEE Transactions on Circuits and Systems I: Regular Papers 61, no. 9 (2014):
2569–77. https://doi.org/10.1109/tcsi.2014.2333331.'
ieee: 'C. Hangmann, C. Hedayat, and U. Hilleringmann, “Stability Analysis of a Charge
Pump Phase-Locked Loop Using Autonomous Difference Equations,” IEEE Transactions
on Circuits and Systems I: Regular Papers, vol. 61, no. 9, pp. 2569–2577,
2014, doi: 10.1109/tcsi.2014.2333331.'
mla: 'Hangmann, Christian, et al. “Stability Analysis of a Charge Pump Phase-Locked
Loop Using Autonomous Difference Equations.” IEEE Transactions on Circuits
and Systems I: Regular Papers, vol. 61, no. 9, Institute of Electrical and
Electronics Engineers (IEEE), 2014, pp. 2569–77, doi:10.1109/tcsi.2014.2333331.'
short: 'C. Hangmann, C. Hedayat, U. Hilleringmann, IEEE Transactions on Circuits
and Systems I: Regular Papers 61 (2014) 2569–2577.'
date_created: 2023-01-24T11:26:19Z
date_updated: 2023-03-22T10:15:23Z
department:
- _id: '59'
doi: 10.1109/tcsi.2014.2333331
intvolume: ' 61'
issue: '9'
keyword:
- Electrical and Electronic Engineering
language:
- iso: eng
page: 2569-2577
publication: 'IEEE Transactions on Circuits and Systems I: Regular Papers'
publication_identifier:
issn:
- 1549-8328
- 1558-0806
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Stability Analysis of a Charge Pump Phase-Locked Loop Using Autonomous Difference
Equations
type: journal_article
user_id: '20179'
volume: 61
year: '2014'
...
---
_id: '39497'
abstract:
- lang: eng
text: The wide usage of thermoelectric generators (TEG) is still blocked by very
high product costs. This paper presents anodized aluminum (Al) as an effective
and cheap alternative for ceramics like alumina (Al2O3) or aluminum nitride (AlN).
Al has a significantly higher thermal conductivity as both named ceramics. In
addition, the lower thermal stability of Al is still high enough to work with
bismuth telluride based modules, which are most common. To show the advantages
of the changed substrate, finite element method (FEM) simulations were performed.
These simulations show that by changing the cold side substrate material the temperature
drop across the substrate is reduced by 60 K. This correlates to a theoretical
power gain of more than 20 {%}. Furthermore, Al can be shaped much easier than
a ceramic material. The biggest advantage is obviously the price. Anodized Al
is around twenty times cheaper than Al2O3. To demonstrate the easy fabrication
of the proposed substrate, samples were prepared only with widely used processes
like those used for conventional printed circuit boards.
author:
- first_name: F.
full_name: Assion, F.
last_name: Assion
- first_name: V.
full_name: Geneiß, V.
last_name: Geneiß
- first_name: M.
full_name: Schönhoff, M.
last_name: Schönhoff
- first_name: C.
full_name: Hedayat, C.
last_name: Hedayat
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Assion F, Geneiß V, Schönhoff M, Hedayat C, Hilleringmann U. Anodized Aluminum
as Effective and Cheap Alternative Substrate for Thermoelectric Generators. In:
Amaldi A, Tang F, eds. Proceedings of the 11th European Conference on Thermoelectrics.
Springer International Publishing; 2014:83–88.'
apa: Assion, F., Geneiß, V., Schönhoff, M., Hedayat, C., & Hilleringmann, U.
(2014). Anodized Aluminum as Effective and Cheap Alternative Substrate for Thermoelectric
Generators. In A. Amaldi & F. Tang (Eds.), Proceedings of the 11th European
Conference on Thermoelectrics (pp. 83–88). Springer International Publishing.
bibtex: '@inproceedings{Assion_Geneiß_Schönhoff_Hedayat_Hilleringmann_2014, place={Cham},
title={Anodized Aluminum as Effective and Cheap Alternative Substrate for Thermoelectric
Generators}, booktitle={Proceedings of the 11th European Conference on Thermoelectrics},
publisher={Springer International Publishing}, author={Assion, F. and Geneiß,
V. and Schönhoff, M. and Hedayat, C. and Hilleringmann, Ulrich}, editor={Amaldi,
Andrea and Tang, Francois}, year={2014}, pages={83–88} }'
chicago: 'Assion, F., V. Geneiß, M. Schönhoff, C. Hedayat, and Ulrich Hilleringmann.
“Anodized Aluminum as Effective and Cheap Alternative Substrate for Thermoelectric
Generators.” In Proceedings of the 11th European Conference on Thermoelectrics,
edited by Andrea Amaldi and Francois Tang, 83–88. Cham: Springer International
Publishing, 2014.'
ieee: F. Assion, V. Geneiß, M. Schönhoff, C. Hedayat, and U. Hilleringmann, “Anodized
Aluminum as Effective and Cheap Alternative Substrate for Thermoelectric Generators,”
in Proceedings of the 11th European Conference on Thermoelectrics, 2014,
pp. 83–88.
mla: Assion, F., et al. “Anodized Aluminum as Effective and Cheap Alternative Substrate
for Thermoelectric Generators.” Proceedings of the 11th European Conference
on Thermoelectrics, edited by Andrea Amaldi and Francois Tang, Springer International
Publishing, 2014, pp. 83–88.
short: 'F. Assion, V. Geneiß, M. Schönhoff, C. Hedayat, U. Hilleringmann, in: A.
Amaldi, F. Tang (Eds.), Proceedings of the 11th European Conference on Thermoelectrics,
Springer International Publishing, Cham, 2014, pp. 83–88.'
date_created: 2023-01-24T11:41:49Z
date_updated: 2023-03-22T10:09:25Z
department:
- _id: '59'
editor:
- first_name: Andrea
full_name: Amaldi, Andrea
last_name: Amaldi
- first_name: Francois
full_name: Tang, Francois
last_name: Tang
language:
- iso: eng
page: 83–88
place: Cham
publication: Proceedings of the 11th European Conference on Thermoelectrics
publication_identifier:
isbn:
- 978-3-319-07332-3
publisher: Springer International Publishing
status: public
title: Anodized Aluminum as Effective and Cheap Alternative Substrate for Thermoelectric
Generators
type: conference
user_id: '20179'
year: '2014'
...
---
_id: '39498'
abstract:
- lang: eng
text: The figure of merit needs to be determined to rate the quality of thermoelectric
materials (TM). Therefore, it is necessary to measure all involved parameters—the
Seebeck coefficient (S), the thermal conductivity ($\lambda$), and the electrical
conductivity ($\sigma$).
author:
- first_name: M.
full_name: Schönhoff, M.
last_name: Schönhoff
- first_name: F.
full_name: Assion, F.
last_name: Assion
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Schönhoff M, Assion F, Hilleringmann U. A Flexible Measurement System for
the Characterization of Thermoelectric Materials. In: Amaldi A, Tang F, eds. Proceedings
of the 11th European Conference on Thermoelectrics. Springer International
Publishing; 2014:53–60.'
apa: Schönhoff, M., Assion, F., & Hilleringmann, U. (2014). A Flexible Measurement
System for the Characterization of Thermoelectric Materials. In A. Amaldi &
F. Tang (Eds.), Proceedings of the 11th European Conference on Thermoelectrics
(pp. 53–60). Springer International Publishing.
bibtex: '@inproceedings{Schönhoff_Assion_Hilleringmann_2014, place={Cham}, title={A
Flexible Measurement System for the Characterization of Thermoelectric Materials},
booktitle={Proceedings of the 11th European Conference on Thermoelectrics}, publisher={Springer
International Publishing}, author={Schönhoff, M. and Assion, F. and Hilleringmann,
Ulrich}, editor={Amaldi, Andrea and Tang, Francois}, year={2014}, pages={53–60}
}'
chicago: 'Schönhoff, M., F. Assion, and Ulrich Hilleringmann. “A Flexible Measurement
System for the Characterization of Thermoelectric Materials.” In Proceedings
of the 11th European Conference on Thermoelectrics, edited by Andrea Amaldi
and Francois Tang, 53–60. Cham: Springer International Publishing, 2014.'
ieee: M. Schönhoff, F. Assion, and U. Hilleringmann, “A Flexible Measurement System
for the Characterization of Thermoelectric Materials,” in Proceedings of the
11th European Conference on Thermoelectrics, 2014, pp. 53–60.
mla: Schönhoff, M., et al. “A Flexible Measurement System for the Characterization
of Thermoelectric Materials.” Proceedings of the 11th European Conference on
Thermoelectrics, edited by Andrea Amaldi and Francois Tang, Springer International
Publishing, 2014, pp. 53–60.
short: 'M. Schönhoff, F. Assion, U. Hilleringmann, in: A. Amaldi, F. Tang (Eds.),
Proceedings of the 11th European Conference on Thermoelectrics, Springer International
Publishing, Cham, 2014, pp. 53–60.'
date_created: 2023-01-24T11:42:47Z
date_updated: 2023-03-22T10:11:00Z
department:
- _id: '59'
editor:
- first_name: Andrea
full_name: Amaldi, Andrea
last_name: Amaldi
- first_name: Francois
full_name: Tang, Francois
last_name: Tang
language:
- iso: eng
page: 53–60
place: Cham
publication: Proceedings of the 11th European Conference on Thermoelectrics
publication_identifier:
isbn:
- 978-3-319-07332-3
publisher: Springer International Publishing
status: public
title: A Flexible Measurement System for the Characterization of Thermoelectric Materials
type: conference
user_id: '20179'
year: '2014'
...
---
_id: '39500'
author:
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: André
full_name: Kleine, André
last_name: Kleine
citation:
ama: 'Hilleringmann U, Kleine A. Replacing TCO electrodes in dye sensitized solar
cells by metal grids. In: du Plessis M, ed. SPIE Proceedings. SPIE; 2014.
doi:10.1117/12.2063218'
apa: Hilleringmann, U., & Kleine, A. (2014). Replacing TCO electrodes in dye
sensitized solar cells by metal grids. In M. du Plessis (Ed.), SPIE Proceedings.
SPIE. https://doi.org/10.1117/12.2063218
bibtex: '@inproceedings{Hilleringmann_Kleine_2014, title={Replacing TCO electrodes
in dye sensitized solar cells by metal grids}, DOI={10.1117/12.2063218},
booktitle={SPIE Proceedings}, publisher={SPIE}, author={Hilleringmann, Ulrich
and Kleine, André}, editor={du Plessis, Monuko}, year={2014} }'
chicago: Hilleringmann, Ulrich, and André Kleine. “Replacing TCO Electrodes in Dye
Sensitized Solar Cells by Metal Grids.” In SPIE Proceedings, edited by
Monuko du Plessis. SPIE, 2014. https://doi.org/10.1117/12.2063218.
ieee: 'U. Hilleringmann and A. Kleine, “Replacing TCO electrodes in dye sensitized
solar cells by metal grids,” in SPIE Proceedings, 2014, doi: 10.1117/12.2063218.'
mla: Hilleringmann, Ulrich, and André Kleine. “Replacing TCO Electrodes in Dye Sensitized
Solar Cells by Metal Grids.” SPIE Proceedings, edited by Monuko du Plessis,
SPIE, 2014, doi:10.1117/12.2063218.
short: 'U. Hilleringmann, A. Kleine, in: M. du Plessis (Ed.), SPIE Proceedings,
SPIE, 2014.'
date_created: 2023-01-24T11:43:24Z
date_updated: 2023-03-22T10:10:41Z
department:
- _id: '59'
doi: 10.1117/12.2063218
editor:
- first_name: Monuko
full_name: du Plessis, Monuko
last_name: du Plessis
language:
- iso: eng
publication: SPIE Proceedings
publication_identifier:
issn:
- 0277-786X
publication_status: published
publisher: SPIE
status: public
title: Replacing TCO electrodes in dye sensitized solar cells by metal grids
type: conference
user_id: '20179'
year: '2014'
...
---
_id: '39501'
author:
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Hilleringmann U. Lithografie. In: Silizium-Halbleitertechnologie. Springer
Fachmedien Wiesbaden; 2014. doi:10.1007/978-3-8348-2085-3_4'
apa: Hilleringmann, U. (2014). Lithografie. In Silizium-Halbleitertechnologie.
Springer Fachmedien Wiesbaden. https://doi.org/10.1007/978-3-8348-2085-3_4
bibtex: '@inbook{Hilleringmann_2014, place={Wiesbaden}, title={Lithografie}, DOI={10.1007/978-3-8348-2085-3_4},
booktitle={Silizium-Halbleitertechnologie}, publisher={Springer Fachmedien Wiesbaden},
author={Hilleringmann, Ulrich}, year={2014} }'
chicago: 'Hilleringmann, Ulrich. “Lithografie.” In Silizium-Halbleitertechnologie.
Wiesbaden: Springer Fachmedien Wiesbaden, 2014. https://doi.org/10.1007/978-3-8348-2085-3_4.'
ieee: 'U. Hilleringmann, “Lithografie,” in Silizium-Halbleitertechnologie,
Wiesbaden: Springer Fachmedien Wiesbaden, 2014.'
mla: Hilleringmann, Ulrich. “Lithografie.” Silizium-Halbleitertechnologie,
Springer Fachmedien Wiesbaden, 2014, doi:10.1007/978-3-8348-2085-3_4.
short: 'U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien
Wiesbaden, Wiesbaden, 2014.'
date_created: 2023-01-24T11:44:13Z
date_updated: 2023-03-22T10:10:23Z
department:
- _id: '59'
doi: 10.1007/978-3-8348-2085-3_4
language:
- iso: eng
place: Wiesbaden
publication: Silizium-Halbleitertechnologie
publication_identifier:
isbn:
- '9783834813350'
- '9783834820853'
publication_status: published
publisher: Springer Fachmedien Wiesbaden
status: public
title: Lithografie
type: book_chapter
user_id: '20179'
year: '2014'
...
---
_id: '39503'
author:
- first_name: FF
full_name: Vidor, FF
last_name: Vidor
- first_name: GI
full_name: Wirth, GI
last_name: Wirth
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Vidor F, Wirth G, Hilleringmann U. Random telegraph signal in nanoparticulated
ZnO thin-film transistors. In: The 40th International Conference on Micro and
Nano Engineering (MNE2014). ; 2014.'
apa: Vidor, F., Wirth, G., & Hilleringmann, U. (2014). Random telegraph signal
in nanoparticulated ZnO thin-film transistors. The 40th International Conference
on Micro and Nano Engineering (MNE2014).
bibtex: '@inproceedings{Vidor_Wirth_Hilleringmann_2014, title={Random telegraph
signal in nanoparticulated ZnO thin-film transistors}, booktitle={The 40th International
Conference on Micro and Nano Engineering (MNE2014)}, author={Vidor, FF and Wirth,
GI and Hilleringmann, Ulrich}, year={2014} }'
chicago: Vidor, FF, GI Wirth, and Ulrich Hilleringmann. “Random Telegraph Signal
in Nanoparticulated ZnO Thin-Film Transistors.” In The 40th International Conference
on Micro and Nano Engineering (MNE2014), 2014.
ieee: F. Vidor, G. Wirth, and U. Hilleringmann, “Random telegraph signal in nanoparticulated
ZnO thin-film transistors,” 2014.
mla: Vidor, FF, et al. “Random Telegraph Signal in Nanoparticulated ZnO Thin-Film
Transistors.” The 40th International Conference on Micro and Nano Engineering
(MNE2014), 2014.
short: 'F. Vidor, G. Wirth, U. Hilleringmann, in: The 40th International Conference
on Micro and Nano Engineering (MNE2014), 2014.'
date_created: 2023-01-24T11:45:54Z
date_updated: 2023-03-22T10:10:04Z
department:
- _id: '59'
language:
- iso: eng
publication: The 40th International Conference on Micro and Nano Engineering (MNE2014)
status: public
title: Random telegraph signal in nanoparticulated ZnO thin-film transistors
type: conference
user_id: '20179'
year: '2014'
...
---
_id: '39494'
author:
- first_name: Kelash
full_name: Kanwar, Kelash
last_name: Kanwar
- first_name: Thomas
full_name: Mager, Thomas
last_name: Mager
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: Volker
full_name: Geneiss, Volker
last_name: Geneiss
- first_name: Christian
full_name: Hedayat, Christian
last_name: Hedayat
citation:
ama: 'Kanwar K, Mager T, Hilleringmann U, Geneiss V, Hedayat C. Embedded UHF RFID
tag design process for rubber transmission belt using 3D model. In: 2014 IEEE
RFID Technology and Applications Conference (RFID-TA). IEEE; 2014. doi:10.1109/rfid-ta.2014.6934208'
apa: Kanwar, K., Mager, T., Hilleringmann, U., Geneiss, V., & Hedayat, C. (2014).
Embedded UHF RFID tag design process for rubber transmission belt using 3D model.
2014 IEEE RFID Technology and Applications Conference (RFID-TA). https://doi.org/10.1109/rfid-ta.2014.6934208
bibtex: '@inproceedings{Kanwar_Mager_Hilleringmann_Geneiss_Hedayat_2014, title={Embedded
UHF RFID tag design process for rubber transmission belt using 3D model}, DOI={10.1109/rfid-ta.2014.6934208},
booktitle={2014 IEEE RFID Technology and Applications Conference (RFID-TA)}, publisher={IEEE},
author={Kanwar, Kelash and Mager, Thomas and Hilleringmann, Ulrich and Geneiss,
Volker and Hedayat, Christian}, year={2014} }'
chicago: Kanwar, Kelash, Thomas Mager, Ulrich Hilleringmann, Volker Geneiss, and
Christian Hedayat. “Embedded UHF RFID Tag Design Process for Rubber Transmission
Belt Using 3D Model.” In 2014 IEEE RFID Technology and Applications Conference
(RFID-TA). IEEE, 2014. https://doi.org/10.1109/rfid-ta.2014.6934208.
ieee: 'K. Kanwar, T. Mager, U. Hilleringmann, V. Geneiss, and C. Hedayat, “Embedded
UHF RFID tag design process for rubber transmission belt using 3D model,” 2014,
doi: 10.1109/rfid-ta.2014.6934208.'
mla: Kanwar, Kelash, et al. “Embedded UHF RFID Tag Design Process for Rubber Transmission
Belt Using 3D Model.” 2014 IEEE RFID Technology and Applications Conference
(RFID-TA), IEEE, 2014, doi:10.1109/rfid-ta.2014.6934208.
short: 'K. Kanwar, T. Mager, U. Hilleringmann, V. Geneiss, C. Hedayat, in: 2014
IEEE RFID Technology and Applications Conference (RFID-TA), IEEE, 2014.'
date_created: 2023-01-24T11:37:52Z
date_updated: 2023-03-22T10:11:38Z
department:
- _id: '59'
doi: 10.1109/rfid-ta.2014.6934208
language:
- iso: eng
publication: 2014 IEEE RFID Technology and Applications Conference (RFID-TA)
publication_status: published
publisher: IEEE
status: public
title: Embedded UHF RFID tag design process for rubber transmission belt using 3D
model
type: conference
user_id: '20179'
year: '2014'
...
---
_id: '39486'
author:
- first_name: Christian
full_name: Hangmann, Christian
last_name: Hangmann
- first_name: Ingo
full_name: Wullner, Ingo
last_name: Wullner
- first_name: Christian
full_name: Hedayat, Christian
last_name: Hedayat
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: 'Hangmann C, Wullner I, Hedayat C, Hilleringmann U. Modeling and characterization
of CP-PLL phase noise in presence of dead zone. In: 2014 IEEE 12th International
New Circuits and Systems Conference (NEWCAS). IEEE; 2014. doi:10.1109/newcas.2014.6934054'
apa: Hangmann, C., Wullner, I., Hedayat, C., & Hilleringmann, U. (2014). Modeling
and characterization of CP-PLL phase noise in presence of dead zone. 2014 IEEE
12th International New Circuits and Systems Conference (NEWCAS). https://doi.org/10.1109/newcas.2014.6934054
bibtex: '@inproceedings{Hangmann_Wullner_Hedayat_Hilleringmann_2014, title={Modeling
and characterization of CP-PLL phase noise in presence of dead zone}, DOI={10.1109/newcas.2014.6934054},
booktitle={2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)},
publisher={IEEE}, author={Hangmann, Christian and Wullner, Ingo and Hedayat, Christian
and Hilleringmann, Ulrich}, year={2014} }'
chicago: Hangmann, Christian, Ingo Wullner, Christian Hedayat, and Ulrich Hilleringmann.
“Modeling and Characterization of CP-PLL Phase Noise in Presence of Dead Zone.”
In 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS).
IEEE, 2014. https://doi.org/10.1109/newcas.2014.6934054.
ieee: 'C. Hangmann, I. Wullner, C. Hedayat, and U. Hilleringmann, “Modeling and
characterization of CP-PLL phase noise in presence of dead zone,” 2014, doi: 10.1109/newcas.2014.6934054.'
mla: Hangmann, Christian, et al. “Modeling and Characterization of CP-PLL Phase
Noise in Presence of Dead Zone.” 2014 IEEE 12th International New Circuits
and Systems Conference (NEWCAS), IEEE, 2014, doi:10.1109/newcas.2014.6934054.
short: 'C. Hangmann, I. Wullner, C. Hedayat, U. Hilleringmann, in: 2014 IEEE 12th
International New Circuits and Systems Conference (NEWCAS), IEEE, 2014.'
date_created: 2023-01-24T11:30:36Z
date_updated: 2023-03-22T10:12:50Z
department:
- _id: '59'
doi: 10.1109/newcas.2014.6934054
language:
- iso: eng
publication: 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)
publication_status: published
publisher: IEEE
status: public
title: Modeling and characterization of CP-PLL phase noise in presence of dead zone
type: conference
user_id: '20179'
year: '2014'
...
---
_id: '39518'
author:
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: M.
full_name: Schonhoff, M.
last_name: Schonhoff
- first_name: F.
full_name: Assion, F.
last_name: Assion
citation:
ama: 'Hilleringmann U, Schonhoff M, Assion F. Titanium disilicide as hot side metallization
layer for thermoelectric generators. In: 2013 Africon. IEEE; 2014. doi:10.1109/afrcon.2013.6757616'
apa: Hilleringmann, U., Schonhoff, M., & Assion, F. (2014). Titanium disilicide
as hot side metallization layer for thermoelectric generators. 2013 Africon.
https://doi.org/10.1109/afrcon.2013.6757616
bibtex: '@inproceedings{Hilleringmann_Schonhoff_Assion_2014, title={Titanium disilicide
as hot side metallization layer for thermoelectric generators}, DOI={10.1109/afrcon.2013.6757616},
booktitle={2013 Africon}, publisher={IEEE}, author={Hilleringmann, Ulrich and
Schonhoff, M. and Assion, F.}, year={2014} }'
chicago: Hilleringmann, Ulrich, M. Schonhoff, and F. Assion. “Titanium Disilicide
as Hot Side Metallization Layer for Thermoelectric Generators.” In 2013 Africon.
IEEE, 2014. https://doi.org/10.1109/afrcon.2013.6757616.
ieee: 'U. Hilleringmann, M. Schonhoff, and F. Assion, “Titanium disilicide as hot
side metallization layer for thermoelectric generators,” 2014, doi: 10.1109/afrcon.2013.6757616.'
mla: Hilleringmann, Ulrich, et al. “Titanium Disilicide as Hot Side Metallization
Layer for Thermoelectric Generators.” 2013 Africon, IEEE, 2014, doi:10.1109/afrcon.2013.6757616.
short: 'U. Hilleringmann, M. Schonhoff, F. Assion, in: 2013 Africon, IEEE, 2014.'
date_created: 2023-01-24T11:53:18Z
date_updated: 2023-03-22T10:18:06Z
department:
- _id: '59'
doi: 10.1109/afrcon.2013.6757616
language:
- iso: eng
publication: 2013 Africon
publication_status: published
publisher: IEEE
status: public
title: Titanium disilicide as hot side metallization layer for thermoelectric generators
type: conference
user_id: '20179'
year: '2014'
...
---
_id: '39506'
alternative_title:
- Self-organization of nanospheres in trenches
author:
- first_name: Katharina
full_name: Brassat, Katharina
last_name: Brassat
- first_name: Fabian
full_name: Assion, Fabian
last_name: Assion
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: Jörg K. N.
full_name: Lindner, Jörg K. N.
last_name: Lindner
citation:
ama: Brassat K, Assion F, Hilleringmann U, Lindner JKN. Self-organization of nanospheres
in trenches on silicon surfaces. physica status solidi (a). 2013;210(8):1485-1489.
doi:10.1002/pssa.201200899
apa: Brassat, K., Assion, F., Hilleringmann, U., & Lindner, J. K. N. (2013).
Self-organization of nanospheres in trenches on silicon surfaces. Physica Status
Solidi (a), 210(8), 1485–1489. https://doi.org/10.1002/pssa.201200899
bibtex: '@article{Brassat_Assion_Hilleringmann_Lindner_2013, title={Self-organization
of nanospheres in trenches on silicon surfaces}, volume={210}, DOI={10.1002/pssa.201200899},
number={8}, journal={physica status solidi (a)}, publisher={Wiley}, author={Brassat,
Katharina and Assion, Fabian and Hilleringmann, Ulrich and Lindner, Jörg K. N.},
year={2013}, pages={1485–1489} }'
chicago: 'Brassat, Katharina, Fabian Assion, Ulrich Hilleringmann, and Jörg K. N.
Lindner. “Self-Organization of Nanospheres in Trenches on Silicon Surfaces.” Physica
Status Solidi (a) 210, no. 8 (2013): 1485–89. https://doi.org/10.1002/pssa.201200899.'
ieee: 'K. Brassat, F. Assion, U. Hilleringmann, and J. K. N. Lindner, “Self-organization
of nanospheres in trenches on silicon surfaces,” physica status solidi (a),
vol. 210, no. 8, pp. 1485–1489, 2013, doi: 10.1002/pssa.201200899.'
mla: Brassat, Katharina, et al. “Self-Organization of Nanospheres in Trenches on
Silicon Surfaces.” Physica Status Solidi (a), vol. 210, no. 8, Wiley, 2013,
pp. 1485–89, doi:10.1002/pssa.201200899.
short: K. Brassat, F. Assion, U. Hilleringmann, J.K.N. Lindner, Physica Status Solidi
(a) 210 (2013) 1485–1489.
date_created: 2023-01-24T11:47:15Z
date_updated: 2023-03-21T10:17:12Z
department:
- _id: '59'
doi: 10.1002/pssa.201200899
intvolume: ' 210'
issue: '8'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Surfaces and Interfaces
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 1485-1489
publication: physica status solidi (a)
publication_identifier:
issn:
- 1862-6300
publication_status: published
publisher: Wiley
status: public
title: Self-organization of nanospheres in trenches on silicon surfaces
type: journal_article
user_id: '20179'
volume: 210
year: '2013'
...
---
_id: '39508'
author:
- first_name: F.
full_name: Assion, F.
last_name: Assion
- first_name: M.
full_name: Schönhoff, M.
last_name: Schönhoff
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: Assion F, Schönhoff M, Hilleringmann U. Titanium Disilicide as High-Temperature
Contact Material for Thermoelectric Generators. Journal of Electronic Materials.
2013;42(7):1932-1935. doi:10.1007/s11664-013-2478-2
apa: Assion, F., Schönhoff, M., & Hilleringmann, U. (2013). Titanium Disilicide
as High-Temperature Contact Material for Thermoelectric Generators. Journal
of Electronic Materials, 42(7), 1932–1935. https://doi.org/10.1007/s11664-013-2478-2
bibtex: '@article{Assion_Schönhoff_Hilleringmann_2013, title={Titanium Disilicide
as High-Temperature Contact Material for Thermoelectric Generators}, volume={42},
DOI={10.1007/s11664-013-2478-2},
number={7}, journal={Journal of Electronic Materials}, publisher={Springer Science
and Business Media LLC}, author={Assion, F. and Schönhoff, M. and Hilleringmann,
Ulrich}, year={2013}, pages={1932–1935} }'
chicago: 'Assion, F., M. Schönhoff, and Ulrich Hilleringmann. “Titanium Disilicide
as High-Temperature Contact Material for Thermoelectric Generators.” Journal
of Electronic Materials 42, no. 7 (2013): 1932–35. https://doi.org/10.1007/s11664-013-2478-2.'
ieee: 'F. Assion, M. Schönhoff, and U. Hilleringmann, “Titanium Disilicide as High-Temperature
Contact Material for Thermoelectric Generators,” Journal of Electronic Materials,
vol. 42, no. 7, pp. 1932–1935, 2013, doi: 10.1007/s11664-013-2478-2.'
mla: Assion, F., et al. “Titanium Disilicide as High-Temperature Contact Material
for Thermoelectric Generators.” Journal of Electronic Materials, vol. 42,
no. 7, Springer Science and Business Media LLC, 2013, pp. 1932–35, doi:10.1007/s11664-013-2478-2.
short: F. Assion, M. Schönhoff, U. Hilleringmann, Journal of Electronic Materials
42 (2013) 1932–1935.
date_created: 2023-01-24T11:48:27Z
date_updated: 2023-03-21T10:17:43Z
department:
- _id: '59'
doi: 10.1007/s11664-013-2478-2
intvolume: ' 42'
issue: '7'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 1932-1935
publication: Journal of Electronic Materials
publication_identifier:
issn:
- 0361-5235
- 1543-186X
publication_status: published
publisher: Springer Science and Business Media LLC
status: public
title: Titanium Disilicide as High-Temperature Contact Material for Thermoelectric
Generators
type: journal_article
user_id: '20179'
volume: 42
year: '2013'
...