@inproceedings{4058, author = {{Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}}, location = {{Porquerolles (France)}}, title = {{{Double-Angle-Resolved Nanosphere Lithography}}}, year = {{2014}}, } @inproceedings{4059, author = {{Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}}, location = {{Warsaw (Poland)}}, title = {{{Nanosphere lithography for the creation of nanoparticle arrays with tailored shape}}}, year = {{2014}}, } @inproceedings{4060, author = {{Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}}, location = {{Boston (USA)}}, title = {{{Fabrication of Arrays of Nanoparticles with Arbitrarily Designed Shape}}}, year = {{2014}}, } @inproceedings{4061, author = {{Bürger, M. and Lindner, Jörg and Reuter, Dirk and As, D.J.}}, location = {{Lille (France)}}, title = {{{Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process}}}, year = {{2014}}, } @inproceedings{4062, author = {{Drude, Dennis and Brassat, Katharina and Brodehl, Christoph and Riedl, Thomas and Lindner, Jörg}}, location = {{Warsaw (Poland)}}, title = {{{Numerical analysis of defects in colloidal nanosphere masks}}}, year = {{2014}}, } @inproceedings{4063, author = {{Ezhova, A. and Lindner, Jörg and Muldarisnur, M. and Zentgraf, Thomas and Huber, K.}}, location = {{Porquerolles (France)}}, title = {{{Ag‐nanoparticles in PA-templates}}}, year = {{2014}}, } @inproceedings{4068, author = {{Kemper, R.M. and Kovacs, A. and Riedl, Thomas and Meertens, D. and Tillmann, K. and As, D. and Lindner, Jörg}}, location = {{Lille (France)}}, title = {{{Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001)}}}, year = {{2014}}, } @inproceedings{4069, author = {{Kemper, R.M. and Veit, P. and Mietze, C. and Dempewolf, A. and Wecker, T. and Christen, J. and As, D. and Lindner, Jörg}}, location = {{Lille (France)}}, title = {{{STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells}}}, year = {{2014}}, } @article{4070, abstract = {{We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy. Substrate patterning has been realized by electron beam lithography and a reactive ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height of about 700 nm. (Scanning) transmission electron microscopy studies show that the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating the local growth rate. Further, the growth at the edges of the surface pattern is investigated. The MQW layers cover the 90° edges by developing low‐index facets rather than by forming a conformal system of 90° angled layers. }}, author = {{Kemper, R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens, D. and Luysberg, M. and As, D. J. and Lindner, Jörg}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, number = {{2}}, pages = {{265--268}}, publisher = {{Wiley}}, title = {{{Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)}}}, doi = {{10.1002/pssc.201300292}}, volume = {{11}}, year = {{2014}}, } @article{4072, abstract = {{This paper presents a low‐cost procedure that allows for self‐organized fabrication of periodically arranged, sub‐50 nm diameter, vertical‐sidewall GaAs nanopillars on GaAs surfaces based on nanosphere lithography, and reactive ion etching (RIE). Monodispersed polystyrene (PS) sphere double layers are deposited from a colloidal suspension on pre‐treated, hydrophilized GaAs substrates. Ni is thermally evaporated to act as a hard mask for subsequent RIE. Scanning electron microscopy reveals that the Ni nanoparticles left on the substrate after PS sphere removal have polygon‐shaped in‐plane cross‐sections corresponding to the shape of the double layer mask openings. RIE using SiCl4 at low pressure and high power density leads to the formation of vertical nanopillars with circular to oval cross‐sections, whose diameters are reduced by ∼1/3 compared to those of the Ni nanoparticles. These findings can be explained by plasma‐enhanced surface diffusion and sputtering processes during RIE. The obtained GaAs nanopillars have an average diameter of only ∼23 nm, exhibit an excellent verticality with a sidewall angle of 88.9 ± 0.4° and planar top faces, as visible in transmission electron microscopy images. }}, author = {{Riedl, Thomas and Lindner, Jörg}}, issn = {{1862-6300}}, journal = {{physica status solidi (a)}}, number = {{12}}, pages = {{2871--2877}}, publisher = {{Wiley}}, title = {{{Self-organized fabrication of periodic arrays of vertical, ultra-thin nanopillars on GaAs surfaces}}}, doi = {{10.1002/pssa.201431474}}, volume = {{211}}, year = {{2014}}, } @article{4074, abstract = {{An experimental analysis of the morphology changes of hexagonally close packed polystyrene sphere monolayers induced by annealing in air is presented. The triangular interstices between each triple of spheres, which are frequently used as nanoscale mask openings in colloidal lithography, are observed to gradually shrink in size and change in shape upon annealing. Top view scanning electron microscopy images reveal that different stages are involved in the closure of monolayer interstices at annealing temperatures in the range between 110°C and 120°C. In the early stages shrinkage of the triangular interstices is dominated by material transport to and thus shortening of their corners, in the late stages interstice area reduction via displacement of the triangle edges becomes significant. At intermediate annealing times the rate of interstice area reduction displays a maximum before a stabilized state characterized by a rounded isosceles triangular shape forms.}}, author = {{Riedl, Thomas and Strake, Matthias and Sievers, Werner and Lindner, Jörg}}, issn = {{1946-4274}}, journal = {{MRS Proceedings}}, location = {{Boston (USA)}}, publisher = {{Cambridge University Press (CUP)}}, title = {{{Thermal Modification of Nanoscale Mask Openings in Polystyrene Sphere Layers}}}, doi = {{10.1557/opl.2014.312}}, volume = {{1663}}, year = {{2014}}, } @inproceedings{4075, abstract = {{The formation of misfit dislocations is an important issue for the performance of heteroepitaxial micro- and optoelectronic devices. We analyze three approaches that quantify the stability of misfit dislocations in axial-heteroepitaxial nanowires with respect to applicability and predictions of critical nanowire dimensions. The “nanoheteroepitaxy” approach of Zubia and Hersee proves suitable for determination of strain partitioning in the presence of an elastic mismatch. Concerning the critical thickness and diameter however the descriptions of Ertekin et al. and Glas respectively yield more reliable results, owing to the consideration of the total coherent and dislocation related energies plus the residual strain energy. In contrast to the model of Ertekin et al., which refers to infinitely long nanowires, the other two mentioned approaches allow predictions of the critical thickness of mismatched deposits on the nanowire axial face.}}, author = {{Riedl, Thomas and Lindner, Jörg}}, booktitle = {{Symposium YY – Elastic Strain Engineering for Unprecedented Materials Properties }}, location = {{Boston (USA)}}, number = {{1664}}, publisher = {{MRS Online Proceedings}}, title = {{{Comparison of Theoretical Approaches Predicting the Coherent-Semicoherent Transition in Nanoscale Axial Heterostructures}}}, doi = {{10.1557/opl.2014.325 }}, year = {{2014}}, } @inproceedings{4078, author = {{Riedl, Thomas and Kovács, A. and Meertens, D. and Lindner, Jörg}}, location = {{Warsaw (Poland)}}, title = {{{Structure and surface chemistry analysis of ultra-thin reactive ion etched GaAs (111) nanopillars}}}, year = {{2014}}, } @inproceedings{4079, author = {{Rüsing, M. and Merten, L. and Reinert, P. and Rogalla, D. and Becker, H.-W. and Lindner, Jörg}}, location = {{Paderborn}}, title = {{{RBS of gold-coated polystyrene nanospheres}}}, year = {{2014}}, } @inproceedings{4083, author = {{Lindner, Jörg}}, location = {{Jena (Germany)}}, title = {{{Nanostrukturierte Oberflächen, nicht nur zum Spass}}}, year = {{2014}}, } @article{4064, abstract = {{An anisotropic etching process for mesa structures using fluorinated plasma with hydrogen addition was developed in an electron cyclotron resonance setup. The evolution of the mesa morphology was studied in dependence on the gas composition, the applied bias and the pressure. The achieved side wall slope approached 90° with a negligible trenching. The aspect ratios of the fabricated structure in the developed residue free ECR plasma etching process were between 5 and 20.}}, author = {{Hiller, Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat J. and Pezoldt, Jörg}}, issn = {{1662-9752}}, journal = {{Materials Science Forum}}, pages = {{730--733}}, publisher = {{Trans Tech Publications}}, title = {{{Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures}}}, doi = {{10.4028/www.scientific.net/msf.778-780.730}}, volume = {{778-780}}, year = {{2014}}, } @inbook{4094, author = {{Kemper, R.M. and As, Donald and Lindner, Jörg}}, booktitle = {{Silicon-based Nanomaterials}}, editor = {{Li, H. and Wu, J. and Wang, Z.M.}}, isbn = {{978-1-4614-8168-3}}, pages = {{381--405}}, publisher = {{Springer Series in Materials Science}}, title = {{{Cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}}}, volume = {{187}}, year = {{2013}}, } @inproceedings{4097, author = {{Brassat, Katharina and Pauly, Johannes and Kemper, R. and Strake, M. and Brodehl, Christoph and Sievers, Werner and Riedl, Thomas and Lindner, Jörg}}, location = {{Paderborn}}, title = {{{Colloidal nano-lithography: state-of-the-art}}}, year = {{2013}}, } @article{4098, abstract = {{The selective deposition and self-assembly of nanospheres from a colloidal suspension in trenches on silicon surfaces is investigated using conventional light, confocal laser scanning and scanning electron microscopy. Trenches with widths of one to several nanosphere diameters are formed on silicon surfaces by photolithography and reactive ion etching. The spreading knife convective self-assembly technique is employed to distribute the nanosphere suspension on the pre-patterned surface. It is shown that this technique is particularly useful in combination with a functionalized surface where a selfassembled molecular monolayer changes the contact angle such that sphere deposition takes place almost exclusively in the trenches. By this, lines selectively filled with a chain of beads with a length of 0.5 mm have been achieved.}}, author = {{Brassat, Katharina and Assion, Fabian and Hilleringmann, Ulrich and Lindner, Jörg}}, issn = {{1862-6300}}, journal = {{physica status solidi (a)}}, location = {{Warsaw (Poland)}}, number = {{8}}, pages = {{1485--1489}}, publisher = {{Wiley}}, title = {{{Self-organization of nanospheres in trenches on silicon surfaces}}}, doi = {{10.1002/pssa.201200899}}, volume = {{210}}, year = {{2013}}, } @inproceedings{4100, author = {{Brassat, Katharina and Lindner, Jörg}}, location = {{Regensburg}}, title = {{{Selective deposition of nanospheres in trenches on silicon surfaces by self-organisation}}}, year = {{2013}}, }