[{"date_updated":"2022-01-06T07:00:26Z","volume":12,"author":[{"first_name":"D.","full_name":"Gogel, D.","last_name":"Gogel"},{"first_name":"M.","full_name":"Weinl, M.","last_name":"Weinl"},{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"},{"first_name":"B.","full_name":"Stritzker, B.","last_name":"Stritzker"}],"date_created":"2018-08-27T13:29:28Z","title":"Plasma modification of nanosphere lithography masks made of polystyrene beads","issue":"3","year":"2010","page":"740-744","intvolume":"        12","citation":{"ama":"Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>. 2010;12(3):740-744.","ieee":"D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of nanosphere lithography masks made of polystyrene beads,” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, pp. 740–744, 2010.","chicago":"Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i> 12, no. 3 (2010): 740–44.","apa":"Gogel, D., Weinl, M., Lindner, J., &#38; Stritzker, B. (2010). Plasma modification of nanosphere lithography masks made of polystyrene beads. <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, <i>12</i>(3), 740–744.","mla":"Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads.” <i>JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS</i>, vol. 12, no. 3, 2010, pp. 740–44.","short":"D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.","bibtex":"@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744} }"},"_id":"4153","department":[{"_id":"286"},{"_id":"230"}],"user_id":"55706","article_type":"original","language":[{"iso":"eng"}],"publication":"JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS","type":"journal_article","abstract":[{"text":"Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL.","lang":"eng"}],"status":"public"},{"language":[{"iso":"eng"}],"ddc":["530"],"publication":"Applied Physics Letters","file":[{"success":1,"relation":"main_file","content_type":"application/pdf","file_size":277385,"file_id":"4195","access_level":"closed","file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf","date_updated":"2018-08-28T11:58:27Z","date_created":"2018-08-28T11:58:27Z","creator":"hclaudia"}],"abstract":[{"text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.","lang":"eng"}],"date_created":"2018-08-28T11:56:08Z","publisher":"AIP Publishing","title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","issue":"25","year":"2010","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"_id":"4194","file_date_updated":"2018-08-28T11:58:27Z","article_type":"original","article_number":"253501","type":"journal_article","status":"public","author":[{"full_name":"Tschumak, E.","last_name":"Tschumak","first_name":"E."},{"last_name":"Granzner","full_name":"Granzner, R.","first_name":"R."},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"first_name":"F.","last_name":"Schwierz","full_name":"Schwierz, F."},{"first_name":"K.","last_name":"Lischka","full_name":"Lischka, K."},{"last_name":"Nagasawa","full_name":"Nagasawa, H.","first_name":"H."},{"full_name":"Abe, M.","last_name":"Abe","first_name":"M."},{"first_name":"Donald","last_name":"As","full_name":"As, Donald"}],"volume":96,"date_updated":"2022-01-06T07:00:33Z","doi":"10.1063/1.3455066","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"has_accepted_license":"1","citation":{"ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>. 2010;96(25). doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>","ieee":"E. Tschumak <i>et al.</i>, “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” <i>Applied Physics Letters</i>, vol. 96, no. 25, 2010.","chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i> 96, no. 25 (2010). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>.","short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i>, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>.","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>, <i>96</i>(25). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>"},"intvolume":"        96"},{"type":"journal_article","status":"public","department":[{"_id":"15"}],"user_id":"55706","_id":"4200","extern":"1","file_date_updated":"2018-08-28T12:23:29Z","article_number":"054517","article_type":"original","has_accepted_license":"1","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","intvolume":"        82","citation":{"chicago":"Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i> 82, no. 5 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>.","ieee":"V. I. Zdravkov <i>et al.</i>, “Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers,” <i>Physical Review B</i>, vol. 82, no. 5, 2010.","ama":"Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>. 2010;82(5). doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>","apa":"Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller, C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>, <i>82</i>(5). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>","mla":"Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i>, vol. 82, no. 5, 054517, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>.","bibtex":"@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>}, number={5054517}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S. and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }","short":"V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010)."},"volume":82,"author":[{"full_name":"Zdravkov, V. I.","last_name":"Zdravkov","first_name":"V. I."},{"last_name":"Kehrle","full_name":"Kehrle, J.","first_name":"J."},{"full_name":"Obermeier, G.","last_name":"Obermeier","first_name":"G."},{"first_name":"S.","full_name":"Gsell, S.","last_name":"Gsell"},{"first_name":"M.","full_name":"Schreck, M.","last_name":"Schreck"},{"last_name":"Müller","full_name":"Müller, C.","first_name":"C."},{"first_name":"H.-A.","full_name":"Krug von Nidda, H.-A.","last_name":"Krug von Nidda"},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"},{"first_name":"J.","last_name":"Moosburger-Will","full_name":"Moosburger-Will, J."},{"first_name":"E.","full_name":"Nold, E.","last_name":"Nold"},{"full_name":"Morari, R.","last_name":"Morari","first_name":"R."},{"last_name":"Ryazanov","full_name":"Ryazanov, V. V.","first_name":"V. V."},{"first_name":"A. S.","full_name":"Sidorenko, A. S.","last_name":"Sidorenko"},{"full_name":"Horn, S.","last_name":"Horn","first_name":"S."},{"first_name":"R.","last_name":"Tidecks","full_name":"Tidecks, R."},{"first_name":"L. R.","last_name":"Tagirov","full_name":"Tagirov, L. R."}],"date_updated":"2022-01-06T07:00:34Z","doi":"10.1103/physrevb.82.054517","publication":"Physical Review B","file":[{"relation":"main_file","success":1,"content_type":"application/pdf","file_id":"4201","access_level":"closed","file_name":"Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf","file_size":723266,"date_created":"2018-08-28T12:23:29Z","creator":"hclaudia","date_updated":"2018-08-28T12:23:29Z"}],"abstract":[{"lang":"eng","text":"We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering\r\nspectrometry, high-resolution transmission electron microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic alloy layer were characterized with superconducting quantum interference\r\ndevice magnetometry. These studies yield precise information about the thickness and demonstrate the homogeneity\r\nof the alloy composition and magnetic properties along the sample series. The dependencies of the\r\ncritical temperature on the Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F predicted by the theory could be realized experimentally, from\r\nreentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of\r\nparameters. Then, T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch core\r\nstructure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved results."}],"language":[{"iso":"eng"}],"ddc":["530"],"issue":"5","year":"2010","date_created":"2018-08-28T12:22:11Z","publisher":"American Physical Society (APS)","title":"Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers"},{"issue":"9","year":"2010","date_created":"2018-08-28T12:30:15Z","publisher":"American Physical Society (APS)","title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","publication":"Physical Review B","file":[{"date_updated":"2018-08-28T12:31:01Z","creator":"hclaudia","date_created":"2018-08-28T12:31:01Z","file_size":238023,"access_level":"closed","file_id":"4205","file_name":"Defects in Carbon implanted Silicon calculated by classical potentials and first principles methods.pdf","content_type":"application/pdf","success":1,"relation":"main_file"}],"abstract":[{"lang":"eng","text":"A comparative theoretical investigation of carbon interstitials in silicon is presented. Calculations using\r\nclassical potentials are compared to first-principles density-functional theory calculations of the geometries,\r\nformation, and activation energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription of this system. In contrast to previous studies, the present first-principles calculations of\r\nthe interstitial carbon migration path yield an activation energy that excellently matches the experiment. The\r\nbond-centered interstitial configuration shows a net magnetization of two electrons, illustrating the need for\r\nspin-polarized calculations."}],"language":[{"iso":"eng"}],"ddc":["530"],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"has_accepted_license":"1","publication_status":"published","intvolume":"        82","citation":{"apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>, <i>82</i>(9). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>","mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i>, vol. 82, no. 9, 094110, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>.","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>}, number={9094110}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” <i>Physical Review B</i>, vol. 82, no. 9, 2010.","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i> 82, no. 9 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>. 2010;82(9). doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>"},"volume":82,"author":[{"full_name":"Zirkelbach, F.","last_name":"Zirkelbach","first_name":"F."},{"first_name":"B.","full_name":"Stritzker, B.","last_name":"Stritzker"},{"last_name":"Nordlund","full_name":"Nordlund, K.","first_name":"K."},{"last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797","first_name":"Jörg"},{"full_name":"Schmidt, W. G.","last_name":"Schmidt","first_name":"W. G."},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."}],"date_updated":"2022-01-06T07:00:35Z","doi":"10.1103/physrevb.82.094110","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706","_id":"4204","file_date_updated":"2018-08-28T12:31:01Z","article_type":"original","article_number":"094110"},{"citation":{"chicago":"Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II,” 2010.","ieee":"J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy, Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain), 2010.","ama":"Lindner J. Advanced topics and applications of Transmission Electron Microscopy, Part I-II. In: ; 2010.","mla":"Lindner, Jörg. <i>Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II</i>. 2010.","bibtex":"@inproceedings{Lindner_2010, title={Advanced topics and applications of Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010} }","short":"J. Lindner, in: 2010.","apa":"Lindner, J. (2010). Advanced topics and applications of Transmission Electron Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain)."},"year":"2010","conference":{"name":"Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias ","start_date":"2010-04-14","end_date":"2010-04-16","location":"Universidad Autónoma de Madrid (Spain)"},"title":"Advanced topics and applications of Transmission Electron Microscopy, Part I-II","author":[{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"}],"date_created":"2018-08-28T12:34:11Z","date_updated":"2022-01-06T07:00:35Z","status":"public","type":"conference_abstract","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706","_id":"4206"},{"year":"2010","intvolume":"      1181","citation":{"ama":"Ila D, Kishimoto N, Lindner J, Baglin J, eds. <i>Ion Beams and Nano-Engineering</i>. Vol 1181. MRS Symposium Proceedings ; 2010.","ieee":"D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., <i>Ion Beams and Nano-Engineering</i>, vol. 1181. MRS Symposium Proceedings , 2010.","chicago":"Ila, D., N.  Kishimoto, Jörg Lindner, and J. Baglin, eds. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181. MRS Symposium Proceedings , 2010.","apa":"Ila, D., Kishimoto, N., Lindner, J., &#38; Baglin, J. (Eds.). (2010). <i>Ion Beams and Nano-Engineering</i> (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .","bibtex":"@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering}, volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }","mla":"Ila, D., et al., editors. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181, MRS Symposium Proceedings , 2010.","short":"D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010."},"publication_identifier":{"isbn":["978-1-60511-154-4"]},"publication_status":"published","title":"Ion Beams and Nano-Engineering","conference":{"name":"MRS Spring Meeting 2009","location":"San Francisco (USA)"},"publisher":"MRS Symposium Proceedings ","date_updated":"2022-01-06T07:00:35Z","volume":1181,"date_created":"2018-08-28T12:38:16Z","editor":[{"first_name":"D.","last_name":"Ila","full_name":"Ila, D."},{"full_name":"Kishimoto, N. ","last_name":"Kishimoto","first_name":"N. "},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"},{"first_name":"J.","full_name":"Baglin, J.","last_name":"Baglin"}],"status":"public","type":"book_editor","language":[{"iso":"eng"}],"_id":"4207","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706"},{"type":"journal_article","status":"public","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"_id":"4152","article_type":"original","article_number":"1181-DD10-02","publication_status":"published","publication_identifier":{"issn":["1946-4274"]},"citation":{"bibtex":"@article{Fischer_Weinl_Lindner_Stritzker_2009, title={Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks}, volume={1181}, DOI={<a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">10.1557/proc-1181-dd10-02</a>}, number={1181-DD10-02}, journal={MRS Proceedings}, publisher={Cambridge University Press (CUP)}, author={Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg and Stritzker, Bernd}, year={2009} }","mla":"Fischer, Frederic J. C., et al. “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.” <i>MRS Proceedings</i>, vol. 1181, 1181-DD10-02, Cambridge University Press (CUP), 2009, doi:<a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">10.1557/proc-1181-dd10-02</a>.","short":"F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181 (2009).","apa":"Fischer, F. J. C., Weinl, M., Lindner, J., &#38; Stritzker, B. (2009). Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks. <i>MRS Proceedings</i>, <i>1181</i>. <a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">https://doi.org/10.1557/proc-1181-dd10-02</a>","ieee":"F. J. C. Fischer, M. Weinl, J. Lindner, and B. Stritzker, “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks,” <i>MRS Proceedings</i>, vol. 1181, 2009.","chicago":"Fischer, Frederic J.C., Michael Weinl, Jörg Lindner, and Bernd Stritzker. “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.” <i>MRS Proceedings</i> 1181 (2009). <a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">https://doi.org/10.1557/proc-1181-dd10-02</a>.","ama":"Fischer FJC, Weinl M, Lindner J, Stritzker B. Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks. <i>MRS Proceedings</i>. 2009;1181. doi:<a href=\"https://doi.org/10.1557/proc-1181-dd10-02\">10.1557/proc-1181-dd10-02</a>"},"intvolume":"      1181","author":[{"first_name":"Frederic J.C.","last_name":"Fischer","full_name":"Fischer, Frederic J.C."},{"last_name":"Weinl","full_name":"Weinl, Michael","first_name":"Michael"},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"full_name":"Stritzker, Bernd","last_name":"Stritzker","first_name":"Bernd"}],"volume":1181,"date_updated":"2022-01-06T07:00:26Z","conference":{"name":"MRS Spring Meeting 2009","start_date":"2009-04-13","end_date":"2009-04-17","location":"San Franicsco (USA)"},"doi":"10.1557/proc-1181-dd10-02","publication":"MRS Proceedings","abstract":[{"lang":"eng","text":"A novel technique to form periodically nanostructured Si surface morphologies based on nanosphere lithography (NSL) and He ion implantation induced swelling is studied in detail. It is shown that by implantation of keV He ions through the nanometric openings of NSL masks regular arrays of hillocks and rings can be created on silicon surfaces. The shape and size of these surface features can be easily controlled by adjusting the ion dose and energy as well as the mask size. Feature heights of more than 100 nm can be obtained, while feature distances are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy measurements of the surface morphology are supplemented by cross-sectional transmission electron microscopy, revealing the inner structure of hillocks to consist of a central cavity surrounded by a hierarchical arrangement of smaller voids. The surface morphologies developed here have the potential to be useful for fixing and separating nano-objects on a silicon surface."}],"language":[{"iso":"eng"}],"year":"2009","date_created":"2018-08-27T13:21:44Z","publisher":"Cambridge University Press (CUP)","title":"Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks"},{"abstract":[{"lang":"eng","text":"Buried ion beam synthesized 3C-SiC layers were revealed to the surface of silicon wafers to provide lattice matched substrates for GaN thin film epitaxy. Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six- or four-fold crystal symmetry, respectively, were formed. GaN thin film growth was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing to the energy and momentum transfer of the ions – allows to deposit epitaxial thin films at particularly low growth temperatures where both the stable hexagonal and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga rich growth conditions seem to stabilize the formation of the cubic polytype. It is obvious from XTEM studies that the high density of crystal defects in the SiC layer is not transferred onto the growing GaN films and that the crystalline quality of GaN films improves with increasing film thickness. The influence of surface roughness and wettability, interfacial cavities and the nucleation of twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN thin films is discussed."}],"file":[{"content_type":"application/pdf","relation":"main_file","success":1,"date_created":"2018-08-28T11:50:45Z","creator":"hclaudia","date_updated":"2018-08-28T11:50:45Z","file_id":"4193","access_level":"closed","file_name":"Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA-MBE on SiC-Si.pdf","file_size":828431}],"publication":"Journal of Crystal Growth","ddc":["530"],"language":[{"iso":"eng"}],"year":"2009","issue":"6","title":"Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si","publisher":"Elsevier BV","date_created":"2018-08-28T11:50:05Z","status":"public","type":"journal_article","article_type":"original","file_date_updated":"2018-08-28T11:50:45Z","_id":"4192","user_id":"55706","department":[{"_id":"15"}],"citation":{"short":"M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of Crystal Growth 312 (2009) 762–769.","bibtex":"@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si}, volume={312}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>}, number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009}, pages={762–769} }","mla":"Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” <i>Journal of Crystal Growth</i>, vol. 312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>.","apa":"Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., &#38; Stritzker, B. (2009). Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. <i>Journal of Crystal Growth</i>, <i>312</i>(6), 762–769. <a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>","ama":"Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. <i>Journal of Crystal Growth</i>. 2009;312(6):762-769. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>","chicago":"Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” <i>Journal of Crystal Growth</i> 312, no. 6 (2009): 762–69. <a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>.","ieee":"M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” <i>Journal of Crystal Growth</i>, vol. 312, no. 6, pp. 762–769, 2009."},"intvolume":"       312","page":"762-769","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["0022-0248"]},"doi":"10.1016/j.jcrysgro.2009.12.048","date_updated":"2022-01-06T07:00:32Z","author":[{"first_name":"M.","last_name":"Häberlen","full_name":"Häberlen, M."},{"first_name":"J.W.","full_name":"Gerlach, J.W.","last_name":"Gerlach"},{"full_name":"Murphy, B.","last_name":"Murphy","first_name":"B."},{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"},{"full_name":"Stritzker, B.","last_name":"Stritzker","first_name":"B."}],"volume":312},{"language":[{"iso":"eng"}],"ddc":["530"],"file":[{"creator":"hclaudia","date_created":"2018-08-28T12:16:11Z","date_updated":"2018-08-28T12:16:11Z","file_id":"4197","access_level":"closed","file_name":"Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf","file_size":213837,"content_type":"application/pdf","relation":"main_file","success":1}],"abstract":[{"lang":"eng","text":"The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface."}],"publication":"physica status solidi (c)","title":"Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)","date_created":"2018-08-28T12:15:20Z","publisher":"Wiley","year":"2009","issue":"1","file_date_updated":"2018-08-28T12:16:11Z","article_type":"original","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706","_id":"4196","status":"public","type":"journal_article","doi":"10.1002/pssc.200982615","volume":7,"author":[{"first_name":"Elena","full_name":"Tschumak, Elena","last_name":"Tschumak"},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"},{"full_name":"Bürger, M.","last_name":"Bürger","first_name":"M."},{"first_name":"K.","last_name":"Lischka","full_name":"Lischka, K."},{"last_name":"Nagasawa","full_name":"Nagasawa, H.","first_name":"H."},{"full_name":"Abe, M.","last_name":"Abe","first_name":"M."},{"full_name":"As, Donald","last_name":"As","first_name":"Donald"}],"date_updated":"2022-01-06T07:00:33Z","intvolume":"         7","page":"104-107","citation":{"ieee":"E. Tschumak <i>et al.</i>, “Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001),” <i>physica status solidi (c)</i>, vol. 7, no. 1, pp. 104–107, 2009.","chicago":"Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i> 7, no. 1 (2009): 104–7. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>.","ama":"Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>physica status solidi (c)</i>. 2009;7(1):104-107. doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>","apa":"Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., &#38; As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>Physica Status Solidi (C)</i>, <i>7</i>(1), 104–107. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>","bibtex":"@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>}, number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak, Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2009}, pages={104–107} }","short":"E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.","mla":"Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i>, vol. 7, no. 1, Wiley, 2009, pp. 104–07, doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>."},"publication_identifier":{"issn":["1862-6351","1610-1642"]},"has_accepted_license":"1","publication_status":"published"},{"title":"Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks","publisher":"Elsevier BV","date_created":"2018-08-28T13:04:23Z","year":"2009","issue":"8-9","ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"Nanopatterning of silicon surfaces by means of He+ ion implantation through self-organized colloidal\r\nmasks is reported for the first time. Nanosphere lithography (NSL) masks with mask openings of 46–\r\n230 nm width were deposited on Si(100) wafers. He+ ions were implanted through these masks in order\r\nto induce a local cavity formation and Si surface swelling. The surface morphology and the subsurface\r\nstructure were studied using atomic force microscopy (AFM) and cross-sectional transmission electron\r\nmicroscopy (XTEM), respectively, as a function of mask and implantation parameters. It is demonstrated\r\nthat regular arrays of both individual hillocks and trough-like circular rings can be generated."}],"file":[{"file_size":467219,"access_level":"closed","file_name":"Regular Silicon Surface Patterns by Local Swelling Induced by He Implantation through Nanosphere Lithography Masks.pdf","file_id":"4222","date_updated":"2018-08-28T13:05:32Z","creator":"hclaudia","date_created":"2018-08-28T13:05:32Z","success":1,"relation":"main_file","content_type":"application/pdf"}],"publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","doi":"10.1016/j.nimb.2009.01.052","date_updated":"2022-01-06T07:00:38Z","author":[{"first_name":"Jörg","last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg"},{"full_name":"Seider, C.","last_name":"Seider","first_name":"C."},{"first_name":"F.","full_name":"Fischer, F.","last_name":"Fischer"},{"first_name":"M.","full_name":"Weinl, M.","last_name":"Weinl"},{"last_name":"Stritzker","full_name":"Stritzker, B.","first_name":"B."}],"volume":267,"citation":{"apa":"Lindner, J., Seider, C., Fischer, F., Weinl, M., &#38; Stritzker, B. (2009). Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>267</i>(8–9), 1394–1397. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">https://doi.org/10.1016/j.nimb.2009.01.052</a>","bibtex":"@article{Lindner_Seider_Fischer_Weinl_Stritzker_2009, title={Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks}, volume={267}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">10.1016/j.nimb.2009.01.052</a>}, number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lindner, Jörg and Seider, C. and Fischer, F. and Weinl, M. and Stritzker, B.}, year={2009}, pages={1394–1397} }","mla":"Lindner, Jörg, et al. “Regular Surface Patterns by Local Swelling Induced by He Implantation into Silicon through Nanosphere Lithography Masks.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1394–97, doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">10.1016/j.nimb.2009.01.052</a>.","short":"J. Lindner, C. Seider, F. Fischer, M. Weinl, B. Stritzker, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (2009) 1394–1397.","ama":"Lindner J, Seider C, Fischer F, Weinl M, Stritzker B. Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2009;267(8-9):1394-1397. doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">10.1016/j.nimb.2009.01.052</a>","chicago":"Lindner, Jörg, C. Seider, F. Fischer, M. Weinl, and B. Stritzker. “Regular Surface Patterns by Local Swelling Induced by He Implantation into Silicon through Nanosphere Lithography Masks.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 267, no. 8–9 (2009): 1394–97. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">https://doi.org/10.1016/j.nimb.2009.01.052</a>.","ieee":"J. Lindner, C. Seider, F. Fischer, M. Weinl, and B. Stritzker, “Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, pp. 1394–1397, 2009."},"page":"1394-1397","intvolume":"       267","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["0168-583X"]},"article_type":"original","extern":"1","file_date_updated":"2018-08-28T13:05:32Z","_id":"4221","user_id":"55706","status":"public","type":"journal_article"},{"volume":267,"author":[{"first_name":"J.","last_name":"Lutz","full_name":"Lutz, J."},{"first_name":"J.W.","last_name":"Gerlach","full_name":"Gerlach, J.W."},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"last_name":"Assmann","full_name":"Assmann, W.","first_name":"W."},{"full_name":"Mändl, S.","last_name":"Mändl","first_name":"S."}],"date_updated":"2022-01-06T07:00:39Z","doi":"10.1016/j.nimb.2009.01.068","publication_identifier":{"issn":["0168-583X"]},"has_accepted_license":"1","publication_status":"published","page":"1634-1637","intvolume":"       267","citation":{"apa":"Lutz, J., Gerlach, J. W., Lindner, J., Assmann, W., &#38; Mändl, S. (2009). Radiation suppressed oxide growth in the system Ni–Ti–O. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>267</i>(8–9), 1634–1637. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">https://doi.org/10.1016/j.nimb.2009.01.068</a>","bibtex":"@article{Lutz_Gerlach_Lindner_Assmann_Mändl_2009, title={Radiation suppressed oxide growth in the system Ni–Ti–O}, volume={267}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">10.1016/j.nimb.2009.01.068</a>}, number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lutz, J. and Gerlach, J.W. and Lindner, Jörg and Assmann, W. and Mändl, S.}, year={2009}, pages={1634–1637} }","short":"J. Lutz, J.W. Gerlach, J. Lindner, W. Assmann, S. Mändl, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (2009) 1634–1637.","mla":"Lutz, J., et al. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1634–37, doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">10.1016/j.nimb.2009.01.068</a>.","ama":"Lutz J, Gerlach JW, Lindner J, Assmann W, Mändl S. Radiation suppressed oxide growth in the system Ni–Ti–O. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2009;267(8-9):1634-1637. doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">10.1016/j.nimb.2009.01.068</a>","chicago":"Lutz, J., J.W. Gerlach, Jörg Lindner, W. Assmann, and S. Mändl. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 267, no. 8–9 (2009): 1634–37. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">https://doi.org/10.1016/j.nimb.2009.01.068</a>.","ieee":"J. Lutz, J. W. Gerlach, J. Lindner, W. Assmann, and S. Mändl, “Radiation suppressed oxide growth in the system Ni–Ti–O,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, pp. 1634–1637, 2009."},"user_id":"55706","_id":"4223","file_date_updated":"2018-08-28T13:07:49Z","extern":"1","article_type":"original","type":"journal_article","status":"public","date_created":"2018-08-28T13:07:17Z","publisher":"Elsevier BV","title":"Radiation suppressed oxide growth in the system Ni–Ti–O","issue":"8-9","year":"2009","language":[{"iso":"eng"}],"ddc":["530"],"publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","file":[{"success":1,"relation":"main_file","content_type":"application/pdf","file_size":342798,"access_level":"closed","file_id":"4224","file_name":"Radiation Suppressed Diffusion in the System Ni-Ti-O.pdf","date_updated":"2018-08-28T13:07:49Z","creator":"hclaudia","date_created":"2018-08-28T13:07:49Z"}],"abstract":[{"lang":"eng","text":"The formation of a thick protective oxide layer on NiTi by plasma immersion ion implantation (PIII) for\r\nmedical devices is an established technology on the laboratory scale. It is shown here that by pre-implantation\r\nwith either 180 keV Ni or low fluence of 190 MeV Au ions, a radiation suppressed growth of the\r\noxide layer of up to 40% is observed. At higher Au fluence and higher PIII temperatures, this changes into\r\nan enhancement of 25–40%. Different amorphisation mechanisms or disorder formation is proposed as\r\nthe underlying effect."}]},{"user_id":"55706","department":[{"_id":"15"}],"_id":"4231","language":[{"iso":"eng"}],"type":"conference_abstract","status":"public","date_created":"2018-08-28T13:22:03Z","author":[{"last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797","first_name":"Jörg"}],"date_updated":"2022-01-06T07:00:40Z","conference":{"location":" Universidad Autónoma de Madrid (Spain)","end_date":"2009-03-27","start_date":"2009-03-25","name":"Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias"},"title":"Characterisation of nanostructured materials for electronic and photonic information processing","citation":{"apa":"Lindner, J. (2009). Characterisation of nanostructured materials for electronic and photonic information processing. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias,  Universidad Autónoma de Madrid (Spain).","bibtex":"@inproceedings{Lindner_2009, title={Characterisation of nanostructured materials for electronic and photonic information processing}, author={Lindner, Jörg}, year={2009} }","short":"J. Lindner, in: 2009.","mla":"Lindner, Jörg. <i>Characterisation of Nanostructured Materials for Electronic and Photonic Information Processing</i>. 2009.","ama":"Lindner J. Characterisation of nanostructured materials for electronic and photonic information processing. In: ; 2009.","ieee":"J. Lindner, “Characterisation of nanostructured materials for electronic and photonic information processing,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias,  Universidad Autónoma de Madrid (Spain), 2009.","chicago":"Lindner, Jörg. “Characterisation of Nanostructured Materials for Electronic and Photonic Information Processing,” 2009."},"year":"2009"},{"citation":{"ama":"Lindner J. Ion Implantation: Fundamental Aspects and Recent Applications. In: ; 2009.","chicago":"Lindner, Jörg. “Ion Implantation: Fundamental Aspects and Recent Applications,” 2009.","ieee":"J. Lindner, “Ion Implantation: Fundamental Aspects and Recent Applications,” presented at the 2nd GRK Convention, Bad Karlshafen (Germany), 2009.","bibtex":"@inproceedings{Lindner_2009, title={Ion Implantation: Fundamental Aspects and Recent Applications}, author={Lindner, Jörg}, year={2009} }","short":"J. Lindner, in: 2009.","mla":"Lindner, Jörg. <i>Ion Implantation: Fundamental Aspects and Recent Applications</i>. 2009.","apa":"Lindner, J. (2009). Ion Implantation: Fundamental Aspects and Recent Applications. Presented at the 2nd GRK Convention, Bad Karlshafen (Germany)."},"year":"2009","date_created":"2018-08-28T13:23:22Z","author":[{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"}],"date_updated":"2022-01-06T07:00:40Z","conference":{"name":"2nd GRK Convention","start_date":"2009-11-26","end_date":"2009-11-27","location":"Bad Karlshafen (Germany)"},"title":"Ion Implantation: Fundamental Aspects and Recent Applications","type":"conference","status":"public","department":[{"_id":"15"}],"user_id":"55706","_id":"4232","language":[{"iso":"eng"}]},{"author":[{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"}],"date_created":"2018-08-28T13:24:41Z","date_updated":"2022-01-06T07:00:40Z","conference":{"end_date":"2009-06-26","location":"Bochum (Germany)","name":"Seminar des RUBION der Ruhr-Universität Bochum","start_date":"2009-06-26"},"title":"Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter Nanomasken","citation":{"chicago":"Lindner, Jörg. “Ionenstrahlmodifikation Kleiner Oberflächenbereiche Mittels Selbstorganisierter Nanomasken,” 2009.","ieee":"J. Lindner, “Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter Nanomasken,” presented at the Seminar des RUBION der Ruhr-Universität Bochum, Bochum (Germany), 2009.","ama":"Lindner J. Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter Nanomasken. In: ; 2009.","bibtex":"@inproceedings{Lindner_2009, title={Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter Nanomasken}, author={Lindner, Jörg}, year={2009} }","short":"J. Lindner, in: 2009.","mla":"Lindner, Jörg. <i>Ionenstrahlmodifikation Kleiner Oberflächenbereiche Mittels Selbstorganisierter Nanomasken</i>. 2009.","apa":"Lindner, J. (2009). Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter Nanomasken. Presented at the Seminar des RUBION der Ruhr-Universität Bochum, Bochum (Germany)."},"year":"2009","department":[{"_id":"15"}],"user_id":"55706","_id":"4233","language":[{"iso":"eng"}],"type":"conference","status":"public"},{"language":[{"iso":"eng"}],"_id":"4234","department":[{"_id":"15"}],"user_id":"55706","status":"public","type":"conference","title":"Synthesis of 2D-Nanostructured ZnO Thin Films using Nanosphere Lithography and Sputter Deposition","conference":{"location":"Straßburg (France)","end_date":"2009-06-12","start_date":"2009-06-08","name":"E-MRS Spring Meeting 2009"},"date_updated":"2022-01-06T07:00:40Z","author":[{"full_name":"Reichardt, F.","last_name":"Reichardt","first_name":"F."},{"first_name":"M.","last_name":"Weinl","full_name":"Weinl, M."},{"last_name":"Gogel","full_name":"Gogel, D.","first_name":"D."},{"first_name":"K.","full_name":"Wätje, K.","last_name":"Wätje"},{"first_name":"A.","full_name":"Wixforth, A.","last_name":"Wixforth"},{"first_name":"B.","full_name":"Stritzker, B.","last_name":"Stritzker"},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"}],"date_created":"2018-08-28T13:26:45Z","year":"2009","citation":{"apa":"Reichardt, F., Weinl, M., Gogel, D., Wätje, K., Wixforth, A., Stritzker, B., &#38; Lindner, J. (2009). Synthesis of 2D-Nanostructured ZnO Thin Films using Nanosphere Lithography and Sputter Deposition. Presented at the E-MRS Spring Meeting 2009, Straßburg (France).","short":"F. Reichardt, M. Weinl, D. Gogel, K. Wätje, A. Wixforth, B. Stritzker, J. Lindner, in: 2009.","bibtex":"@inproceedings{Reichardt_Weinl_Gogel_Wätje_Wixforth_Stritzker_Lindner_2009, title={Synthesis of 2D-Nanostructured ZnO Thin Films using Nanosphere Lithography and Sputter Deposition}, author={Reichardt, F. and Weinl, M. and Gogel, D. and Wätje, K. and Wixforth, A. and Stritzker, B. and Lindner, Jörg}, year={2009} }","mla":"Reichardt, F., et al. <i>Synthesis of 2D-Nanostructured ZnO Thin Films Using Nanosphere Lithography and Sputter Deposition</i>. 2009.","ama":"Reichardt F, Weinl M, Gogel D, et al. Synthesis of 2D-Nanostructured ZnO Thin Films using Nanosphere Lithography and Sputter Deposition. In: ; 2009.","ieee":"F. Reichardt <i>et al.</i>, “Synthesis of 2D-Nanostructured ZnO Thin Films using Nanosphere Lithography and Sputter Deposition,” presented at the E-MRS Spring Meeting 2009, Straßburg (France), 2009.","chicago":"Reichardt, F., M. Weinl, D. Gogel, K. Wätje, A. Wixforth, B. Stritzker, and Jörg Lindner. “Synthesis of 2D-Nanostructured ZnO Thin Films Using Nanosphere Lithography and Sputter Deposition,” 2009."}},{"ddc":["530"],"language":[{"iso":"eng"}],"publication":"Materials Science and Engineering: B","abstract":[{"lang":"eng","text":"The precipitation process of silicon carbide in heavily carbon doped silicon is not yet fully understood.\r\nHigh resolution transmission electron microscopy observations suggest that in a first step carbon atoms\r\nform C Si dumbbells on regular Si lattice sites which agglomerate into large clusters. In a second step,\r\nwhen the cluster size reaches a radius of a fewnm, the high interfacial energy due to the SiC/Si lattice misfit\r\nof almost 20% is overcome and the precipitation occurs. By simulation, details of the precipitation process\r\ncan be obtained on the atomic level. A recently proposed parametrization of a Tersoff-like bond order\r\npotential is used to model the system appropriately. Preliminary results gained by molecular dynamics\r\nsimulations using this potential are presented."}],"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","file_id":"4230","file_name":"Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon.pdf","access_level":"closed","file_size":477318,"date_created":"2018-08-28T13:18:34Z","creator":"hclaudia","date_updated":"2018-08-28T13:18:34Z"}],"publisher":"Elsevier BV","date_created":"2018-08-28T13:18:05Z","title":"Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon","year":"2008","_id":"4229","user_id":"55706","article_type":"original","extern":"1","file_date_updated":"2018-08-28T13:18:34Z","type":"journal_article","status":"public","date_updated":"2022-01-06T07:00:39Z","volume":"159-160","author":[{"full_name":"Zirkelbach, F.","last_name":"Zirkelbach","first_name":"F."},{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"},{"last_name":"Nordlund","full_name":"Nordlund, K.","first_name":"K."},{"last_name":"Stritzker","full_name":"Stritzker, B.","first_name":"B."}],"doi":"10.1016/j.mseb.2008.10.010","has_accepted_license":"1","publication_identifier":{"issn":["0921-5107"]},"publication_status":"published","page":"149-152","citation":{"ama":"Zirkelbach F, Lindner J, Nordlund K, Stritzker B. Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon. <i>Materials Science and Engineering: B</i>. 2008;159-160:149-152. doi:<a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">10.1016/j.mseb.2008.10.010</a>","chicago":"Zirkelbach, F., Jörg Lindner, K. Nordlund, and B. Stritzker. “Molecular Dynamics Simulation of Defect Formation and Precipitation in Heavily Carbon Doped Silicon.” <i>Materials Science and Engineering: B</i> 159–160 (2008): 149–52. <a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">https://doi.org/10.1016/j.mseb.2008.10.010</a>.","ieee":"F. Zirkelbach, J. Lindner, K. Nordlund, and B. Stritzker, “Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon,” <i>Materials Science and Engineering: B</i>, vol. 159–160, pp. 149–152, 2008.","apa":"Zirkelbach, F., Lindner, J., Nordlund, K., &#38; Stritzker, B. (2008). Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon. <i>Materials Science and Engineering: B</i>, <i>159</i>–<i>160</i>, 149–152. <a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">https://doi.org/10.1016/j.mseb.2008.10.010</a>","mla":"Zirkelbach, F., et al. “Molecular Dynamics Simulation of Defect Formation and Precipitation in Heavily Carbon Doped Silicon.” <i>Materials Science and Engineering: B</i>, vol. 159–160, Elsevier BV, 2008, pp. 149–52, doi:<a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">10.1016/j.mseb.2008.10.010</a>.","short":"F. Zirkelbach, J. Lindner, K. Nordlund, B. Stritzker, Materials Science and Engineering: B 159–160 (2008) 149–152.","bibtex":"@article{Zirkelbach_Lindner_Nordlund_Stritzker_2008, title={Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon}, volume={159–160}, DOI={<a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">10.1016/j.mseb.2008.10.010</a>}, journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={Zirkelbach, F. and Lindner, Jörg and Nordlund, K. and Stritzker, B.}, year={2008}, pages={149–152} }"}}]