---
_id: '4153'
abstract:
- lang: eng
text: Nanosphere lithography (NSL) masks consisting of mono- or double-layers of
polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization
of PS particles during the controlled drying of a colloidal suspension on a surface.
The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma
are studied as a function of initial sphere size, plasma power and treatment time.
The influence of several experimental parameters, including the plasma induced
temperature rise, are analysed using scanning and transmission electron microscopy.
It is demonstrated that a variety of new intriguing nanopatterns can be generated
on silicon surfaces by the combination of NSL and plasma techniques, largely broadening
the variety of patterns available so far by NSL.
article_type: original
author:
- first_name: D.
full_name: Gogel, D.
last_name: Gogel
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere
lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS AND
ADVANCED MATERIALS. 2010;12(3):740-744.
apa: Gogel, D., Weinl, M., Lindner, J., & Stritzker, B. (2010). Plasma modification
of nanosphere lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, 12(3), 740–744.
bibtex: '@article{Gogel_Weinl_Lindner_Stritzker_2010, title={Plasma modification
of nanosphere lithography masks made of polystyrene beads}, volume={12}, number={3},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, author={Gogel, D.
and Weinl, M. and Lindner, Jörg and Stritzker, B.}, year={2010}, pages={740–744}
}'
chicago: 'Gogel, D., M. Weinl, Jörg Lindner, and B. Stritzker. “Plasma Modification
of Nanosphere Lithography Masks Made of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12, no. 3 (2010): 740–44.'
ieee: D. Gogel, M. Weinl, J. Lindner, and B. Stritzker, “Plasma modification of
nanosphere lithography masks made of polystyrene beads,” JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS, vol. 12, no. 3, pp. 740–744, 2010.
mla: Gogel, D., et al. “Plasma Modification of Nanosphere Lithography Masks Made
of Polystyrene Beads.” JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,
vol. 12, no. 3, 2010, pp. 740–44.
short: D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS
AND ADVANCED MATERIALS 12 (2010) 740–744.
date_created: 2018-08-27T13:29:28Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '286'
- _id: '230'
intvolume: ' 12'
issue: '3'
language:
- iso: eng
page: 740-744
publication: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
status: public
title: Plasma modification of nanosphere lithography masks made of polystyrene beads
type: journal_article
user_id: '55706'
volume: 12
year: '2010'
...
---
_id: '4194'
abstract:
- lang: eng
text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar
cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy.
The device shows a clear field effect at positive bias voltages with V_th=0.6
V. The HFET output characteristics were calculated using ATLAS simulation program.
The electron channel at the cubic AlGaN/GaN interface was detected by room temperature
capacitance-voltage measurements.
article_number: '253501'
article_type: original
author:
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: R.
full_name: Granzner, R.
last_name: Granzner
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: F.
full_name: Schwierz, F.
last_name: Schwierz
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction
field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters.
2010;96(25). doi:10.1063/1.3455066
apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa,
H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor
on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25).
https://doi.org/10.1063/1.3455066
bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010,
title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+
implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066},
number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka,
K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }'
chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor
on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010).
https://doi.org/10.1063/1.3455066.
ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect
transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol.
96, no. 25, 2010.
mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect
Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol.
96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.
short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, D. As, Applied Physics Letters 96 (2010).
date_created: 2018-08-28T11:56:08Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3455066
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:58:27Z
date_updated: 2018-08-28T11:58:27Z
file_id: '4195'
file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf
file_size: 277385
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:58:27Z
has_accepted_license: '1'
intvolume: ' 96'
issue: '25'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted
3C–SiC (001)
type: journal_article
user_id: '55706'
volume: 96
year: '2010'
...
---
_id: '4200'
abstract:
- lang: eng
text: "We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due
to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a
special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated
by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers,
the composition of the alloy, and the quality of interfaces were controlled by
Rutherford backscattering\r\nspectrometry, high-resolution transmission electron
microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic
alloy layer were characterized with superconducting quantum interference\r\ndevice
magnetometry. These studies yield precise information about the thickness and
demonstrate the homogeneity\r\nof the alloy composition and magnetic properties
along the sample series. The dependencies of the\r\ncritical temperature on the
Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for
constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting
layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F
predicted by the theory could be realized experimentally, from\r\nreentrant superconducting
behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith
a shallow minimum. Even a double extinction of superconductivity was observed,
giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All
critical temperature curves were fitted with suitable sets of\r\nparameters. Then,
T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch
core\r\nstructure were calculated using these parameters. Finally, superconducting
spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved
results."
article_number: '054517'
article_type: original
author:
- first_name: V. I.
full_name: Zdravkov, V. I.
last_name: Zdravkov
- first_name: J.
full_name: Kehrle, J.
last_name: Kehrle
- first_name: G.
full_name: Obermeier, G.
last_name: Obermeier
- first_name: S.
full_name: Gsell, S.
last_name: Gsell
- first_name: M.
full_name: Schreck, M.
last_name: Schreck
- first_name: C.
full_name: Müller, C.
last_name: Müller
- first_name: H.-A.
full_name: Krug von Nidda, H.-A.
last_name: Krug von Nidda
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: J.
full_name: Moosburger-Will, J.
last_name: Moosburger-Will
- first_name: E.
full_name: Nold, E.
last_name: Nold
- first_name: R.
full_name: Morari, R.
last_name: Morari
- first_name: V. V.
full_name: Ryazanov, V. V.
last_name: Ryazanov
- first_name: A. S.
full_name: Sidorenko, A. S.
last_name: Sidorenko
- first_name: S.
full_name: Horn, S.
last_name: Horn
- first_name: R.
full_name: Tidecks, R.
last_name: Tidecks
- first_name: L. R.
full_name: Tagirov, L. R.
last_name: Tagirov
citation:
ama: Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers. Physical Review B. 2010;82(5). doi:10.1103/physrevb.82.054517
apa: Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller,
C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers. Physical Review B, 82(5). https://doi.org/10.1103/physrevb.82.054517
bibtex: '@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et
al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers}, volume={82}, DOI={10.1103/physrevb.82.054517},
number={5054517}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S.
and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and
Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }'
chicago: Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller,
H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy
Bilayers.” Physical Review B 82, no. 5 (2010). https://doi.org/10.1103/physrevb.82.054517.
ieee: V. I. Zdravkov et al., “Reentrant superconductivity in superconductor/ferromagnetic-alloy
bilayers,” Physical Review B, vol. 82, no. 5, 2010.
mla: Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy
Bilayers.” Physical Review B, vol. 82, no. 5, 054517, American Physical
Society (APS), 2010, doi:10.1103/physrevb.82.054517.
short: V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller,
H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V.
Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B
82 (2010).
date_created: 2018-08-28T12:22:11Z
date_updated: 2022-01-06T07:00:34Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physrevb.82.054517
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:23:29Z
date_updated: 2018-08-28T12:23:29Z
file_id: '4201'
file_name: Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf
file_size: 723266
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:23:29Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '5'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers
type: journal_article
user_id: '55706'
volume: 82
year: '2010'
...
---
_id: '4204'
abstract:
- lang: eng
text: "A comparative theoretical investigation of carbon interstitials in silicon
is presented. Calculations using\r\nclassical potentials are compared to first-principles
density-functional theory calculations of the geometries,\r\nformation, and activation
energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription
of this system. In contrast to previous studies, the present first-principles
calculations of\r\nthe interstitial carbon migration path yield an activation
energy that excellently matches the experiment. The\r\nbond-centered interstitial
configuration shows a net magnetization of two electrons, illustrating the need
for\r\nspin-polarized calculations."
article_number: '094110'
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W. G.
full_name: Schmidt, W. G.
last_name: Schmidt
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
citation:
ama: Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects
in carbon implanted silicon calculated by classical potentials and first-principles
methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110
apa: Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &
Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical
potentials and first-principles methods. Physical Review B, 82(9).
https://doi.org/10.1103/physrevb.82.094110
bibtex: '@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects
in carbon implanted silicon calculated by classical potentials and first-principles
methods}, volume={82}, DOI={10.1103/physrevb.82.094110},
number={9094110}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner,
Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }'
chicago: Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt,
and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials
and First-Principles Methods.” Physical Review B 82, no. 9 (2010). https://doi.org/10.1103/physrevb.82.094110.
ieee: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E.
Rauls, “Defects in carbon implanted silicon calculated by classical potentials
and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010.
mla: Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical
Potentials and First-Principles Methods.” Physical Review B, vol. 82, no.
9, 094110, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.094110.
short: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls,
Physical Review B 82 (2010).
date_created: 2018-08-28T12:30:15Z
date_updated: 2022-01-06T07:00:35Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1103/physrevb.82.094110
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:31:01Z
date_updated: 2018-08-28T12:31:01Z
file_id: '4205'
file_name: Defects in Carbon implanted Silicon calculated by classical potentials
and first principles methods.pdf
file_size: 238023
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:31:01Z
has_accepted_license: '1'
intvolume: ' 82'
issue: '9'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Defects in carbon implanted silicon calculated by classical potentials and
first-principles methods
type: journal_article
user_id: '55706'
volume: 82
year: '2010'
...
---
_id: '4206'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Advanced topics and applications of Transmission Electron Microscopy,
Part I-II. In: ; 2010.'
apa: Lindner, J. (2010). Advanced topics and applications of Transmission Electron
Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica
Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma
de Madrid (Spain).
bibtex: '@inproceedings{Lindner_2010, title={Advanced topics and applications of
Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010}
}'
chicago: Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron
Microscopy, Part I-II,” 2010.
ieee: J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy,
Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada,
Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid
(Spain), 2010.
mla: Lindner, Jörg. Advanced Topics and Applications of Transmission Electron
Microscopy, Part I-II. 2010.
short: 'J. Lindner, in: 2010.'
conference:
end_date: 2010-04-16
location: Universidad Autónoma de Madrid (Spain)
name: 'Guest Lectures at Departamento de Fisica Applicada, Master de Materiales
Avanzados y Nanotecnologias '
start_date: 2010-04-14
date_created: 2018-08-28T12:34:11Z
date_updated: 2022-01-06T07:00:35Z
department:
- _id: '15'
- _id: '286'
status: public
title: Advanced topics and applications of Transmission Electron Microscopy, Part
I-II
type: conference_abstract
user_id: '55706'
year: '2010'
...
---
_id: '4207'
citation:
ama: Ila D, Kishimoto N, Lindner J, Baglin J, eds. Ion Beams and Nano-Engineering.
Vol 1181. MRS Symposium Proceedings ; 2010.
apa: 'Ila, D., Kishimoto, N., Lindner, J., & Baglin, J. (Eds.). (2010). Ion
Beams and Nano-Engineering (Vol. 1181). Presented at the MRS Spring Meeting
2009, San Francisco (USA): MRS Symposium Proceedings .'
bibtex: '@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering},
volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }'
chicago: Ila, D., N. Kishimoto, Jörg Lindner, and J. Baglin, eds. Ion Beams
and Nano-Engineering. Vol. 1181. MRS Symposium Proceedings , 2010.
ieee: D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., Ion Beams and Nano-Engineering,
vol. 1181. MRS Symposium Proceedings , 2010.
mla: Ila, D., et al., editors. Ion Beams and Nano-Engineering. Vol. 1181,
MRS Symposium Proceedings , 2010.
short: D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering,
MRS Symposium Proceedings , 2010.
conference:
location: San Francisco (USA)
name: MRS Spring Meeting 2009
date_created: 2018-08-28T12:38:16Z
date_updated: 2022-01-06T07:00:35Z
department:
- _id: '15'
- _id: '286'
editor:
- first_name: D.
full_name: Ila, D.
last_name: Ila
- first_name: 'N. '
full_name: 'Kishimoto, N. '
last_name: Kishimoto
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: J.
full_name: Baglin, J.
last_name: Baglin
intvolume: ' 1181'
language:
- iso: eng
publication_identifier:
isbn:
- 978-1-60511-154-4
publication_status: published
publisher: 'MRS Symposium Proceedings '
status: public
title: Ion Beams and Nano-Engineering
type: book_editor
user_id: '55706'
volume: 1181
year: '2010'
...
---
_id: '4152'
abstract:
- lang: eng
text: A novel technique to form periodically nanostructured Si surface morphologies
based on nanosphere lithography (NSL) and He ion implantation induced swelling
is studied in detail. It is shown that by implantation of keV He ions through
the nanometric openings of NSL masks regular arrays of hillocks and rings can
be created on silicon surfaces. The shape and size of these surface features can
be easily controlled by adjusting the ion dose and energy as well as the mask
size. Feature heights of more than 100 nm can be obtained, while feature distances
are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to
be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy
measurements of the surface morphology are supplemented by cross-sectional transmission
electron microscopy, revealing the inner structure of hillocks to consist of a
central cavity surrounded by a hierarchical arrangement of smaller voids. The
surface morphologies developed here have the potential to be useful for fixing
and separating nano-objects on a silicon surface.
article_number: 1181-DD10-02
article_type: original
author:
- first_name: Frederic J.C.
full_name: Fischer, Frederic J.C.
last_name: Fischer
- first_name: Michael
full_name: Weinl, Michael
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
citation:
ama: Fischer FJC, Weinl M, Lindner J, Stritzker B. Nanoscale Surface Patterning
of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.
MRS Proceedings. 2009;1181. doi:10.1557/proc-1181-dd10-02
apa: Fischer, F. J. C., Weinl, M., Lindner, J., & Stritzker, B. (2009). Nanoscale
Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks. MRS Proceedings, 1181. https://doi.org/10.1557/proc-1181-dd10-02
bibtex: '@article{Fischer_Weinl_Lindner_Stritzker_2009, title={Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks}, volume={1181}, DOI={10.1557/proc-1181-dd10-02},
number={1181-DD10-02}, journal={MRS Proceedings}, publisher={Cambridge University
Press (CUP)}, author={Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg
and Stritzker, Bernd}, year={2009} }'
chicago: Fischer, Frederic J.C., Michael Weinl, Jörg Lindner, and Bernd Stritzker.
“Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks.” MRS Proceedings 1181 (2009). https://doi.org/10.1557/proc-1181-dd10-02.
ieee: F. J. C. Fischer, M. Weinl, J. Lindner, and B. Stritzker, “Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks,” MRS Proceedings, vol. 1181, 2009.
mla: Fischer, Frederic J. C., et al. “Nanoscale Surface Patterning of Silicon Using
Local Swelling Induced by He Implantation through NSL-Masks.” MRS Proceedings,
vol. 1181, 1181-DD10-02, Cambridge University Press (CUP), 2009, doi:10.1557/proc-1181-dd10-02.
short: F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181
(2009).
conference:
end_date: 2009-04-17
location: San Franicsco (USA)
name: MRS Spring Meeting 2009
start_date: 2009-04-13
date_created: 2018-08-27T13:21:44Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '15'
- _id: '286'
doi: 10.1557/proc-1181-dd10-02
intvolume: ' 1181'
language:
- iso: eng
publication: MRS Proceedings
publication_identifier:
issn:
- 1946-4274
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He
Implantation through NSL-Masks
type: journal_article
user_id: '55706'
volume: 1181
year: '2009'
...
---
_id: '4192'
abstract:
- lang: eng
text: "Buried ion beam synthesized 3C-SiC layers were revealed to the surface of
silicon wafers to provide lattice matched substrates for GaN thin film epitaxy.
Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six-
or four-fold crystal symmetry, respectively, were formed. GaN thin film growth
was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing
to the energy and momentum transfer of the ions – allows to deposit epitaxial
thin films at particularly low growth temperatures where both the stable hexagonal
and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction
(XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate
fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe
grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga
rich growth conditions seem to stabilize the formation of the cubic polytype.
It is obvious from XTEM studies that the high density of crystal defects in the
SiC layer is not transferred onto the growing GaN films and that the crystalline
quality of GaN films improves with increasing film thickness. The influence of
surface roughness and wettability, interfacial cavities and the nucleation of
twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN
thin films is discussed."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization
of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of
Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048
apa: Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., & Stritzker, B.
(2009). Structural characterization of cubic and hexagonal GaN thin films grown
by IBA–MBE on SiC/Si. Journal of Crystal Growth, 312(6), 762–769.
https://doi.org/10.1016/j.jcrysgro.2009.12.048
bibtex: '@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si},
volume={312}, DOI={10.1016/j.jcrysgro.2009.12.048},
number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen,
M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009},
pages={762–769} }'
chicago: 'Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker.
“Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE
on SiC/Si.” Journal of Crystal Growth 312, no. 6 (2009): 762–69. https://doi.org/10.1016/j.jcrysgro.2009.12.048.'
ieee: M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,”
Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
mla: Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN
Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth, vol.
312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048.
short: M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of
Crystal Growth 312 (2009) 762–769.
date_created: 2018-08-28T11:50:05Z
date_updated: 2022-01-06T07:00:32Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2009.12.048
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:50:45Z
date_updated: 2018-08-28T11:50:45Z
file_id: '4193'
file_name: Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown
by IBA-MBE on SiC-Si.pdf
file_size: 828431
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:50:45Z
has_accepted_license: '1'
intvolume: ' 312'
issue: '6'
language:
- iso: eng
page: 762-769
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Structural characterization of cubic and hexagonal GaN thin films grown by
IBA–MBE on SiC/Si
type: journal_article
user_id: '55706'
volume: 312
year: '2009'
...
---
_id: '4196'
abstract:
- lang: eng
text: The growth of cubic group III-nitrides is a direct way to eliminate polarization
effects, which inherently limit the fabrication of normally-off heterojunction
field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated
of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular
beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of
3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural
properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD).
HFETs with normally off and normally-on characteristics were fabricated of cubic
AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed
to detect the electron channel at the c-AlGaN/GaN hetero interface.
article_type: original
author:
- first_name: Elena
full_name: Tschumak, Elena
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown
by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c). 2009;7(1):104-107.
doi:10.1002/pssc.200982615
apa: Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M.,
& As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted
3C-SiC (001). Physica Status Solidi (C), 7(1), 104–107. https://doi.org/10.1002/pssc.200982615
bibtex: '@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar
cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7},
DOI={10.1002/pssc.200982615},
number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak,
Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe,
M. and As, Donald}, year={2009}, pages={104–107} }'
chicago: 'Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M.
Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C) 7, no. 1 (2009): 104–7. https://doi.org/10.1002/pssc.200982615.'
ieee: E. Tschumak et al., “Non-polar cubic AlGaN/GaN HFETs grown by MBE on
Ar+implanted 3C-SiC (001),” physica status solidi (c), vol. 7, no. 1, pp.
104–107, 2009.
mla: Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C), vol. 7, no. 1, Wiley, 2009, pp.
104–07, doi:10.1002/pssc.200982615.
short: E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As,
Physica Status Solidi (C) 7 (2009) 104–107.
date_created: 2018-08-28T12:15:20Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1002/pssc.200982615
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:16:11Z
date_updated: 2018-08-28T12:16:11Z
file_id: '4197'
file_name: Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf
file_size: 213837
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:16:11Z
has_accepted_license: '1'
intvolume: ' 7'
issue: '1'
language:
- iso: eng
page: 104-107
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
- 1610-1642
publication_status: published
publisher: Wiley
status: public
title: Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)
type: journal_article
user_id: '55706'
volume: 7
year: '2009'
...
---
_id: '4221'
abstract:
- lang: eng
text: "Nanopatterning of silicon surfaces by means of He+ ion implantation through
self-organized colloidal\r\nmasks is reported for the first time. Nanosphere lithography
(NSL) masks with mask openings of 46–\r\n230 nm width were deposited on Si(100)
wafers. He+ ions were implanted through these masks in order\r\nto induce a local
cavity formation and Si surface swelling. The surface morphology and the subsurface\r\nstructure
were studied using atomic force microscopy (AFM) and cross-sectional transmission
electron\r\nmicroscopy (XTEM), respectively, as a function of mask and implantation
parameters. It is demonstrated\r\nthat regular arrays of both individual hillocks
and trough-like circular rings can be generated."
article_type: original
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: C.
full_name: Seider, C.
last_name: Seider
- first_name: F.
full_name: Fischer, F.
last_name: Fischer
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: 'Lindner J, Seider C, Fischer F, Weinl M, Stritzker B. Regular surface patterns
by local swelling induced by He implantation into silicon through nanosphere lithography
masks. Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms. 2009;267(8-9):1394-1397. doi:10.1016/j.nimb.2009.01.052'
apa: 'Lindner, J., Seider, C., Fischer, F., Weinl, M., & Stritzker, B. (2009).
Regular surface patterns by local swelling induced by He implantation into silicon
through nanosphere lithography masks. Nuclear Instruments and Methods in Physics
Research Section B: Beam Interactions with Materials and Atoms, 267(8–9),
1394–1397. https://doi.org/10.1016/j.nimb.2009.01.052'
bibtex: '@article{Lindner_Seider_Fischer_Weinl_Stritzker_2009, title={Regular surface
patterns by local swelling induced by He implantation into silicon through nanosphere
lithography masks}, volume={267}, DOI={10.1016/j.nimb.2009.01.052},
number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lindner,
Jörg and Seider, C. and Fischer, F. and Weinl, M. and Stritzker, B.}, year={2009},
pages={1394–1397} }'
chicago: 'Lindner, Jörg, C. Seider, F. Fischer, M. Weinl, and B. Stritzker. “Regular
Surface Patterns by Local Swelling Induced by He Implantation into Silicon through
Nanosphere Lithography Masks.” Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms 267, no. 8–9 (2009):
1394–97. https://doi.org/10.1016/j.nimb.2009.01.052.'
ieee: 'J. Lindner, C. Seider, F. Fischer, M. Weinl, and B. Stritzker, “Regular surface
patterns by local swelling induced by He implantation into silicon through nanosphere
lithography masks,” Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms, vol. 267, no. 8–9, pp. 1394–1397,
2009.'
mla: 'Lindner, Jörg, et al. “Regular Surface Patterns by Local Swelling Induced
by He Implantation into Silicon through Nanosphere Lithography Masks.” Nuclear
Instruments and Methods in Physics Research Section B: Beam Interactions with
Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1394–97, doi:10.1016/j.nimb.2009.01.052.'
short: 'J. Lindner, C. Seider, F. Fischer, M. Weinl, B. Stritzker, Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms 267 (2009) 1394–1397.'
date_created: 2018-08-28T13:04:23Z
date_updated: 2022-01-06T07:00:38Z
ddc:
- '530'
doi: 10.1016/j.nimb.2009.01.052
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:05:32Z
date_updated: 2018-08-28T13:05:32Z
file_id: '4222'
file_name: Regular Silicon Surface Patterns by Local Swelling Induced by He Implantation
through Nanosphere Lithography Masks.pdf
file_size: 467219
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:05:32Z
has_accepted_license: '1'
intvolume: ' 267'
issue: 8-9
language:
- iso: eng
page: 1394-1397
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Regular surface patterns by local swelling induced by He implantation into
silicon through nanosphere lithography masks
type: journal_article
user_id: '55706'
volume: 267
year: '2009'
...
---
_id: '4223'
abstract:
- lang: eng
text: "The formation of a thick protective oxide layer on NiTi by plasma immersion
ion implantation (PIII) for\r\nmedical devices is an established technology on
the laboratory scale. It is shown here that by pre-implantation\r\nwith either
180 keV Ni or low fluence of 190 MeV Au ions, a radiation suppressed growth of
the\r\noxide layer of up to 40% is observed. At higher Au fluence and higher PIII
temperatures, this changes into\r\nan enhancement of 25–40%. Different amorphisation
mechanisms or disorder formation is proposed as\r\nthe underlying effect."
article_type: original
author:
- first_name: J.
full_name: Lutz, J.
last_name: Lutz
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W.
full_name: Assmann, W.
last_name: Assmann
- first_name: S.
full_name: Mändl, S.
last_name: Mändl
citation:
ama: 'Lutz J, Gerlach JW, Lindner J, Assmann W, Mändl S. Radiation suppressed oxide
growth in the system Ni–Ti–O. Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms. 2009;267(8-9):1634-1637.
doi:10.1016/j.nimb.2009.01.068'
apa: 'Lutz, J., Gerlach, J. W., Lindner, J., Assmann, W., & Mändl, S. (2009).
Radiation suppressed oxide growth in the system Ni–Ti–O. Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms, 267(8–9), 1634–1637. https://doi.org/10.1016/j.nimb.2009.01.068'
bibtex: '@article{Lutz_Gerlach_Lindner_Assmann_Mändl_2009, title={Radiation suppressed
oxide growth in the system Ni–Ti–O}, volume={267}, DOI={10.1016/j.nimb.2009.01.068},
number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lutz,
J. and Gerlach, J.W. and Lindner, Jörg and Assmann, W. and Mändl, S.}, year={2009},
pages={1634–1637} }'
chicago: 'Lutz, J., J.W. Gerlach, Jörg Lindner, W. Assmann, and S. Mändl. “Radiation
Suppressed Oxide Growth in the System Ni–Ti–O.” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms
267, no. 8–9 (2009): 1634–37. https://doi.org/10.1016/j.nimb.2009.01.068.'
ieee: 'J. Lutz, J. W. Gerlach, J. Lindner, W. Assmann, and S. Mändl, “Radiation
suppressed oxide growth in the system Ni–Ti–O,” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms,
vol. 267, no. 8–9, pp. 1634–1637, 2009.'
mla: 'Lutz, J., et al. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.”
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1634–37,
doi:10.1016/j.nimb.2009.01.068.'
short: 'J. Lutz, J.W. Gerlach, J. Lindner, W. Assmann, S. Mändl, Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms 267 (2009) 1634–1637.'
date_created: 2018-08-28T13:07:17Z
date_updated: 2022-01-06T07:00:39Z
ddc:
- '530'
doi: 10.1016/j.nimb.2009.01.068
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:07:49Z
date_updated: 2018-08-28T13:07:49Z
file_id: '4224'
file_name: Radiation Suppressed Diffusion in the System Ni-Ti-O.pdf
file_size: 342798
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:07:49Z
has_accepted_license: '1'
intvolume: ' 267'
issue: 8-9
language:
- iso: eng
page: 1634-1637
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Radiation suppressed oxide growth in the system Ni–Ti–O
type: journal_article
user_id: '55706'
volume: 267
year: '2009'
...
---
_id: '4231'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Characterisation of nanostructured materials for electronic and
photonic information processing. In: ; 2009.'
apa: Lindner, J. (2009). Characterisation of nanostructured materials for electronic
and photonic information processing. Presented at the Guest Lectures at Departamento
de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias, Universidad
Autónoma de Madrid (Spain).
bibtex: '@inproceedings{Lindner_2009, title={Characterisation of nanostructured
materials for electronic and photonic information processing}, author={Lindner,
Jörg}, year={2009} }'
chicago: Lindner, Jörg. “Characterisation of Nanostructured Materials for Electronic
and Photonic Information Processing,” 2009.
ieee: J. Lindner, “Characterisation of nanostructured materials for electronic and
photonic information processing,” presented at the Guest Lectures at Departamento
de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias, Universidad
Autónoma de Madrid (Spain), 2009.
mla: Lindner, Jörg. Characterisation of Nanostructured Materials for Electronic
and Photonic Information Processing. 2009.
short: 'J. Lindner, in: 2009.'
conference:
end_date: 2009-03-27
location: ' Universidad Autónoma de Madrid (Spain)'
name: Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados
y Nanotecnologias
start_date: 2009-03-25
date_created: 2018-08-28T13:22:03Z
date_updated: 2022-01-06T07:00:40Z
department:
- _id: '15'
language:
- iso: eng
status: public
title: Characterisation of nanostructured materials for electronic and photonic information
processing
type: conference_abstract
user_id: '55706'
year: '2009'
...
---
_id: '4232'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Ion Implantation: Fundamental Aspects and Recent Applications.
In: ; 2009.'
apa: 'Lindner, J. (2009). Ion Implantation: Fundamental Aspects and Recent Applications.
Presented at the 2nd GRK Convention, Bad Karlshafen (Germany).'
bibtex: '@inproceedings{Lindner_2009, title={Ion Implantation: Fundamental Aspects
and Recent Applications}, author={Lindner, Jörg}, year={2009} }'
chicago: 'Lindner, Jörg. “Ion Implantation: Fundamental Aspects and Recent Applications,”
2009.'
ieee: 'J. Lindner, “Ion Implantation: Fundamental Aspects and Recent Applications,”
presented at the 2nd GRK Convention, Bad Karlshafen (Germany), 2009.'
mla: 'Lindner, Jörg. Ion Implantation: Fundamental Aspects and Recent Applications.
2009.'
short: 'J. Lindner, in: 2009.'
conference:
end_date: 2009-11-27
location: Bad Karlshafen (Germany)
name: 2nd GRK Convention
start_date: 2009-11-26
date_created: 2018-08-28T13:23:22Z
date_updated: 2022-01-06T07:00:40Z
department:
- _id: '15'
language:
- iso: eng
status: public
title: 'Ion Implantation: Fundamental Aspects and Recent Applications'
type: conference
user_id: '55706'
year: '2009'
...
---
_id: '4233'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter
Nanomasken. In: ; 2009.'
apa: Lindner, J. (2009). Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels
selbstorganisierter Nanomasken. Presented at the Seminar des RUBION der Ruhr-Universität
Bochum, Bochum (Germany).
bibtex: '@inproceedings{Lindner_2009, title={Ionenstrahlmodifikation kleiner Oberflächenbereiche
mittels selbstorganisierter Nanomasken}, author={Lindner, Jörg}, year={2009} }'
chicago: Lindner, Jörg. “Ionenstrahlmodifikation Kleiner Oberflächenbereiche Mittels
Selbstorganisierter Nanomasken,” 2009.
ieee: J. Lindner, “Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter
Nanomasken,” presented at the Seminar des RUBION der Ruhr-Universität Bochum,
Bochum (Germany), 2009.
mla: Lindner, Jörg. Ionenstrahlmodifikation Kleiner Oberflächenbereiche Mittels
Selbstorganisierter Nanomasken. 2009.
short: 'J. Lindner, in: 2009.'
conference:
end_date: 2009-06-26
location: Bochum (Germany)
name: Seminar des RUBION der Ruhr-Universität Bochum
start_date: 2009-06-26
date_created: 2018-08-28T13:24:41Z
date_updated: 2022-01-06T07:00:40Z
department:
- _id: '15'
language:
- iso: eng
status: public
title: Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter
Nanomasken
type: conference
user_id: '55706'
year: '2009'
...
---
_id: '4234'
author:
- first_name: F.
full_name: Reichardt, F.
last_name: Reichardt
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: D.
full_name: Gogel, D.
last_name: Gogel
- first_name: K.
full_name: Wätje, K.
last_name: Wätje
- first_name: A.
full_name: Wixforth, A.
last_name: Wixforth
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Reichardt F, Weinl M, Gogel D, et al. Synthesis of 2D-Nanostructured ZnO Thin
Films using Nanosphere Lithography and Sputter Deposition. In: ; 2009.'
apa: Reichardt, F., Weinl, M., Gogel, D., Wätje, K., Wixforth, A., Stritzker, B.,
& Lindner, J. (2009). Synthesis of 2D-Nanostructured ZnO Thin Films using
Nanosphere Lithography and Sputter Deposition. Presented at the E-MRS Spring Meeting
2009, Straßburg (France).
bibtex: '@inproceedings{Reichardt_Weinl_Gogel_Wätje_Wixforth_Stritzker_Lindner_2009,
title={Synthesis of 2D-Nanostructured ZnO Thin Films using Nanosphere Lithography
and Sputter Deposition}, author={Reichardt, F. and Weinl, M. and Gogel, D. and
Wätje, K. and Wixforth, A. and Stritzker, B. and Lindner, Jörg}, year={2009} }'
chicago: Reichardt, F., M. Weinl, D. Gogel, K. Wätje, A. Wixforth, B. Stritzker,
and Jörg Lindner. “Synthesis of 2D-Nanostructured ZnO Thin Films Using Nanosphere
Lithography and Sputter Deposition,” 2009.
ieee: F. Reichardt et al., “Synthesis of 2D-Nanostructured ZnO Thin Films
using Nanosphere Lithography and Sputter Deposition,” presented at the E-MRS Spring
Meeting 2009, Straßburg (France), 2009.
mla: Reichardt, F., et al. Synthesis of 2D-Nanostructured ZnO Thin Films Using
Nanosphere Lithography and Sputter Deposition. 2009.
short: 'F. Reichardt, M. Weinl, D. Gogel, K. Wätje, A. Wixforth, B. Stritzker, J.
Lindner, in: 2009.'
conference:
end_date: 2009-06-12
location: Straßburg (France)
name: E-MRS Spring Meeting 2009
start_date: 2009-06-08
date_created: 2018-08-28T13:26:45Z
date_updated: 2022-01-06T07:00:40Z
department:
- _id: '15'
language:
- iso: eng
status: public
title: Synthesis of 2D-Nanostructured ZnO Thin Films using Nanosphere Lithography
and Sputter Deposition
type: conference
user_id: '55706'
year: '2009'
...
---
_id: '4229'
abstract:
- lang: eng
text: "The precipitation process of silicon carbide in heavily carbon doped silicon
is not yet fully understood.\r\nHigh resolution transmission electron microscopy
observations suggest that in a first step carbon atoms\r\nform C Si dumbbells
on regular Si lattice sites which agglomerate into large clusters. In a second
step,\r\nwhen the cluster size reaches a radius of a fewnm, the high interfacial
energy due to the SiC/Si lattice misfit\r\nof almost 20% is overcome and the precipitation
occurs. By simulation, details of the precipitation process\r\ncan be obtained
on the atomic level. A recently proposed parametrization of a Tersoff-like bond
order\r\npotential is used to model the system appropriately. Preliminary results
gained by molecular dynamics\r\nsimulations using this potential are presented."
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: 'Zirkelbach F, Lindner J, Nordlund K, Stritzker B. Molecular dynamics simulation
of defect formation and precipitation in heavily carbon doped silicon. Materials
Science and Engineering: B. 2008;159-160:149-152. doi:10.1016/j.mseb.2008.10.010'
apa: 'Zirkelbach, F., Lindner, J., Nordlund, K., & Stritzker, B. (2008). Molecular
dynamics simulation of defect formation and precipitation in heavily carbon doped
silicon. Materials Science and Engineering: B, 159–160, 149–152.
https://doi.org/10.1016/j.mseb.2008.10.010'
bibtex: '@article{Zirkelbach_Lindner_Nordlund_Stritzker_2008, title={Molecular dynamics
simulation of defect formation and precipitation in heavily carbon doped silicon},
volume={159–160}, DOI={10.1016/j.mseb.2008.10.010},
journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={Zirkelbach,
F. and Lindner, Jörg and Nordlund, K. and Stritzker, B.}, year={2008}, pages={149–152}
}'
chicago: 'Zirkelbach, F., Jörg Lindner, K. Nordlund, and B. Stritzker. “Molecular
Dynamics Simulation of Defect Formation and Precipitation in Heavily Carbon Doped
Silicon.” Materials Science and Engineering: B 159–160 (2008): 149–52.
https://doi.org/10.1016/j.mseb.2008.10.010.'
ieee: 'F. Zirkelbach, J. Lindner, K. Nordlund, and B. Stritzker, “Molecular dynamics
simulation of defect formation and precipitation in heavily carbon doped silicon,”
Materials Science and Engineering: B, vol. 159–160, pp. 149–152, 2008.'
mla: 'Zirkelbach, F., et al. “Molecular Dynamics Simulation of Defect Formation
and Precipitation in Heavily Carbon Doped Silicon.” Materials Science and Engineering:
B, vol. 159–160, Elsevier BV, 2008, pp. 149–52, doi:10.1016/j.mseb.2008.10.010.'
short: 'F. Zirkelbach, J. Lindner, K. Nordlund, B. Stritzker, Materials Science
and Engineering: B 159–160 (2008) 149–152.'
date_created: 2018-08-28T13:18:05Z
date_updated: 2022-01-06T07:00:39Z
ddc:
- '530'
doi: 10.1016/j.mseb.2008.10.010
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:18:34Z
date_updated: 2018-08-28T13:18:34Z
file_id: '4230'
file_name: Molecular dynamics simulation of defect formation and precipitation in
heavily carbon doped silicon.pdf
file_size: 477318
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:18:34Z
has_accepted_license: '1'
language:
- iso: eng
page: 149-152
publication: 'Materials Science and Engineering: B'
publication_identifier:
issn:
- 0921-5107
publication_status: published
publisher: Elsevier BV
status: public
title: Molecular dynamics simulation of defect formation and precipitation in heavily
carbon doped silicon
type: journal_article
user_id: '55706'
volume: 159-160
year: '2008'
...