---
_id: '57677'
abstract:
- lang: eng
  text: <jats:p>We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system
    lattice matched to InP, as future sources for single and entangled photons for
    long-haul fiber-based quantum communication in the optical C-band. We achieved
    these quantum dots by local droplet etching via InAl droplets in an In0.52Al0.48As
    layer and subsequent filling of the holes with In0.53Ga0.47As. Here, we present
    detailed investigations of the hole morphologies measured by atomic force microscopy.
    Statistical analysis of a set of nanoholes reveals a high degree of symmetry for
    nearly half of them when etched at optimized temperatures. Overgrowth with 50–150 nm
    In0.52Al0.48As increases their diameter and elongates the holes along the [01̄1]-direction.
    By systematically scanning the parameter space, we were able to fill the holes
    with In0.53Ga0.47As, and by capping the filled holes and performing photoluminescence
    measurements, we observe photoluminescence emission in the O-band up into the
    C-band depending on the filling height of the nanoholes.</jats:p>
author:
- first_name: Dennis
  full_name: Deutsch, Dennis
  id: '23489'
  last_name: Deutsch
- first_name: C.
  full_name: Buchholz, C.
  last_name: Buchholz
- first_name: V.
  full_name: Zolatanosha, V.
  last_name: Zolatanosha
- first_name: K. D.
  full_name: Jöns, K. D.
  last_name: Jöns
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Deutsch D, Buchholz C, Zolatanosha V, Jöns KD, Reuter D. Telecom C-band photon
    emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As
    layers. <i>AIP Advances</i>. 2023;13(5). doi:<a href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>
  apa: Deutsch, D., Buchholz, C., Zolatanosha, V., Jöns, K. D., &#38; Reuter, D. (2023).
    Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
    nanoholes in In0.52Al0.48As layers. <i>AIP Advances</i>, <i>13</i>(5). <a href="https://doi.org/10.1063/5.0147281">https://doi.org/10.1063/5.0147281</a>
  bibtex: '@article{Deutsch_Buchholz_Zolatanosha_Jöns_Reuter_2023, title={Telecom
    C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
    in In0.52Al0.48As layers}, volume={13}, DOI={<a href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>},
    number={5}, journal={AIP Advances}, publisher={AIP Publishing}, author={Deutsch,
    Dennis and Buchholz, C. and Zolatanosha, V. and Jöns, K. D. and Reuter, Dirk},
    year={2023} }'
  chicago: Deutsch, Dennis, C. Buchholz, V. Zolatanosha, K. D. Jöns, and Dirk Reuter.
    “Telecom C-Band Photon Emission from (In,Ga)As Quantum Dots Generated by Filling
    Nanoholes in In0.52Al0.48As Layers.” <i>AIP Advances</i> 13, no. 5 (2023). <a
    href="https://doi.org/10.1063/5.0147281">https://doi.org/10.1063/5.0147281</a>.
  ieee: 'D. Deutsch, C. Buchholz, V. Zolatanosha, K. D. Jöns, and D. Reuter, “Telecom
    C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
    in In0.52Al0.48As layers,” <i>AIP Advances</i>, vol. 13, no. 5, 2023, doi: <a
    href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>.'
  mla: Deutsch, Dennis, et al. “Telecom C-Band Photon Emission from (In,Ga)As Quantum
    Dots Generated by Filling Nanoholes in In0.52Al0.48As Layers.” <i>AIP Advances</i>,
    vol. 13, no. 5, AIP Publishing, 2023, doi:<a href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>.
  short: D. Deutsch, C. Buchholz, V. Zolatanosha, K.D. Jöns, D. Reuter, AIP Advances
    13 (2023).
date_created: 2024-12-10T07:31:41Z
date_updated: 2024-12-10T07:32:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0147281
intvolume: '        13'
issue: '5'
language:
- iso: eng
publication: AIP Advances
publication_identifier:
  issn:
  - 2158-3226
publication_status: published
publisher: AIP Publishing
status: public
title: Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
  nanoholes in In0.52Al0.48As layers
type: journal_article
user_id: '42514'
volume: 13
year: '2023'
...