@inproceedings{24346, author = {{Scheytt, Christoph}}, booktitle = {{System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave Radar Sensors}}, title = {{{Introduction to Integrated mm‐Wave Sensors}}}, year = {{2013}}, } @article{24350, abstract = {{This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication.}}, author = {{Elkhouly, Mohamed and Glisic, Srdjan and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}}, journal = {{Microwave Theory and Techniques, IEEE Transactions on}}, number = {{99}}, pages = {{1--13}}, title = {{{220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology}}}, doi = {{10.1109/TMTT.2013.2258032}}, volume = {{PP}}, year = {{2013}}, } @article{24352, abstract = {{This paper analyses substrate-related spurious tones in fractional-N phase- locked loops with integrated VCOs. Spur positions are calculated and experimentally verified as a function of the divider ratios of prescaler and programmable divider. For an integrated wideband PLL in SiGe BiCMOS technology the spur power levels are measured and compared with theoretical expectations. The power in these spurs is minimized by layout techniques shielding the reference input buffer. Spur minimization by using a variable reference frequency is experimentally demonstrated. Based on this observation, a programmable integer-N PLL for driving the fractional-N synthesizer is suggested to reduce the worst-case spur level significantly. Index Terms — Fractional-N, frequency synthesizers, fractional spurs, substrate spurs, phase-locked loops (PLLs), phase noise. }}, author = {{Osmany, Sabbir Ahmed and Herzel, Frank and Scheytt, Christoph}}, journal = {{Analog Integrated Circuits and Signal Processing}}, number = {{3}}, pages = {{545--556}}, title = {{{Analysis and minimization of substrate spurs in fractional-N frequency synthesizers}}}, doi = {{10.1007/s10470-012-0002-x}}, volume = {{74}}, year = {{2013}}, } @inproceedings{24349, abstract = {{This paper presents the packaging technology and the integrated antenna design for a miniaturized 122-GHz radar sensor. The package layout and the assembly process are shortly explained. Measurements of the antenna including the flip chip interconnect are presented that have been achieved by replacing the IC with a dummy chip that only contains a through-line. Afterwards, radiation pattern measurements are shown that were recorded using the radar sensor as transmitter. Finally, details of the fully integrated radar sensor are given, together with results of the first Doppler measurements.}}, author = {{Beer, Stefan and Girma, Mekdes Gebresilassie and Sun, Yaoming and Winkler, Wolfgang and Debski, Wojciech and Paaso, Jaska and Kunkel, Gerhard and Scheytt, Christoph and Hasch, Jürgen and Zwick, Thomas}}, booktitle = {{7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION}}, title = {{{Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC}}}, year = {{2013}}, } @inproceedings{24351, abstract = {{We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology, enables error-free data recovery of heavily distorted signals transmitted at a bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer reported yet utilizes a novel 1-tap look-ahead architecture.}}, author = {{Möller, Lothar and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas}}, booktitle = {{Optical Fiber Communication Conference}}, title = {{{80 Gb/s Decision Feedback Equalizer for Intersymbol Interference}}}, doi = {{10.1364/OFC.2013.OW4B.2 }}, year = {{2013}}, } @inproceedings{24401, abstract = {{A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single- side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW.}}, author = {{Mao, Yanfei and Scheytt, Christoph and Schmalz, Klaus and Borngräber, Johannes}}, booktitle = {{Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}}, pages = {{183--186}}, title = {{{245 GHz subharmonic receiver in SiGe}}}, year = {{2012}}, } @inproceedings{24402, abstract = {{The design of a complex integrated transceiver for 121–124 GHz is presented. The transceiver consists of the transmitter with VCO, power amplifier and power detectors, the receiver with LNA, two mixers for quadrature receive path and variable gain amplifiers for IF-output and the digital control circuits with SPI-interface. A central part is the VCO with DAC and memory for on-chip storage of programmable frequency ramps for FMCW radar applications. The oscillator phase noise is -92 dBc/Hz at 1MHz offset. For calibration of the radar-system on chip, a frequency measurement unit is integrated. The radar chip has power consumption of 380 mW and occupies an area of 1.8 mm x 1.5 mm. Several examples of frequency ramp generation are presented. The chip is intended for integration together with antenna in a single package.}}, author = {{Debski, Wojciech and Winkler, Wolfgang and Sun, Yaoming and Marinkovic, Miroslav and Borngräber, Johannes and Scheytt, Christoph}}, booktitle = {{Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}}, pages = {{191--194}}, title = {{{120 GHz Radar Mixed-Signal Transceiver}}}, year = {{2012}}, } @inproceedings{24403, abstract = {{A passive microwave sensor based on microstrip lines for characterizing cell cultivation in aqueous compartments is presented. The proposed design methodology leads to a highly sensitive biosensor structure, which is fabricated on Rogers 3003 material. It is shown that a sufficiently high sensitivity is achieved to monitor the cultivation stadium of a yeast culture based on detection of permittivity changes. The obtained measurement results show good agreement with the performed full 3D EM simulations. According to these results the presented biosensor is capable of characterizing the stage of yeast cultivation label-free and contactless.}}, author = {{Wessel, Jan and Schmalz, Klaus and Cahill, Brian and Gastrock, Gunter and Scheytt, Christoph}}, booktitle = {{Microwave Conference (EuMC), 2012 42nd European}}, title = {{{Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries}}}, doi = {{10.23919/EuMC.2012.6459231 }}, year = {{2012}}, } @inproceedings{24405, abstract = {{Abstract— This paper presents a fully digital transmitter architecture based on a digital polar modulator (DPM) and switch-mode power amplifier (SMPA). A simple method for comparison and estimation of different digital modulation techniques for SMPA is described. An estimation of the proposed digital polar modulator properties was done by means of a 2.1..2.2 GHz class-F power amplifier. For a CDMA signal with 9.5 dB peak-to-average power ratio (PAPR), the class-F based amplifier module driven by DPM pulse train shows more than 1 W output power and more than 10 % of drain efficiency. }}, author = {{Ostrovskyy, Philip and Heuermann, Holger and Sadeghfam, Arash and Scheytt, Christoph}}, booktitle = {{Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}}, location = {{Amsterdam}}, pages = {{659--662}}, title = {{{Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier}}}, doi = {{10.23919/EuMC.2012.6459419}}, year = {{2012}}, } @article{24406, abstract = {{A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single- side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW. Index Terms— SiGe technology, millimeter-wave circuits, 245 GHz, CB LNA, SHM, VCO, sub-harmonic receiver.}}, author = {{Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}}, journal = {{Microwave Theory and Techniques, IEEE Transactions on}}, number = {{99}}, pages = {{183--186}}, title = {{{245-GHz subharmonic receiver in SiGe }}}, volume = {{PP}}, year = {{2012}}, } @article{24407, abstract = {{A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes switching conditions for the amplification stage of the switch-mode power amplifier in comparison to the BDSM architecture. The BDSM is clocked at 5 GHz, while the notch frequency can be tuned in a range of 2.1-2.2 GHz. The modulator achieves 46.6-dB signal-to-noise and distortion ratio in 10-MHz bandwidth for a sine-wave input at 2.2 GHz consuming 330 mW from a 3-V supply. The BDSM was also tested with a single-channel WCDMA signal. It has demonstrated 42.2-dBc adjacent channel leakage ratio at 5-MHz offset and less than 2.1% error vector magnitude over the tuning range.}}, author = {{Ostrovskyy, Philip and Gustat, Hans and Ortmanns, Maurits and Scheytt, Christoph}}, issn = {{1557-9670}}, journal = {{Microwave Theory and Techniques, IEEE Transactions on}}, number = {{8}}, pages = {{2524--2531}}, title = {{{A 5-Gb/s 2.1–2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier}}}, doi = {{10.1109/TMTT.2012.2203143}}, volume = {{60}}, year = {{2012}}, } @article{24408, abstract = {{This paper presents a 60-GHz SiGe PA with a 29.2% power-added efficiency (PAE), a peak power of 16.8 dBm, and a peak output 1-dB compression (OP 1dB ) of 14 dBm. Its measured gain is 13.5 dB at 60 GHz with a corresponding 3-dB bandwidth of 47-74 GHz. The PAE is above 25% with a supply voltage from 2.2 to 4 V. A cascode stage has been analyzed and used as the amplifier core. The high PAE is achieved by pushing the upper transistor of the cascode stage to weak avalanche area and correct transistor sizing. The linearity is achieved by optimizing the input matching and emitter degeneration. Safe operation conditions of heterojunction bipolar transistors at dc and high frequencies have been investigated at weak avalanche area. A safe operation boundary for high frequencies is given based on our experimental results and analytical derivations. Large-signal stress tests have shown there is no performance degradation and have proved the validity of this safe operation boundary.}}, author = {{Sun, Yaoming and Fischer, Gerhard G. and Scheytt, Christoph}}, issn = {{1557-9670 }}, journal = {{Microwave Theory and Techniques, IEEE Transactions on}}, number = {{8}}, pages = {{ 2581 -- 2589}}, title = {{{A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche}}}, doi = {{10.1109/TMTT.2012.2202684}}, volume = {{60}}, year = {{2012}}, } @article{24409, abstract = {{We propose a new circuit for the realization of transimpedance amplifiers (TIAs), targeted at reducing the input-referred noise of the TIA or alternatively increasing the bandwidth, without increasing the power dissipation. An intensive theoretical analysis of the method is given. A prototype chip is fabricated in 0.25- μm SiGe BiCMOS technology. The TIA has a gain of 71 dBΩ , a bandwidth of 20.5 GHz, and an average input-referred current noise density of 18 pA/√Hz . The circuit operates from a 2.5-V supply, and power dissipation is 57 mW.}}, author = {{Sedighi, Behnam and Scheytt, Christoph}}, journal = {{(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering}}, number = {{8}}, pages = {{461--465}}, title = {{{Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links}}}, doi = {{10.1109/TCSII.2012.2204118}}, volume = {{59}}, year = {{2012}}, } @inproceedings{24410, abstract = {{This paper reviews recent results of wireless transmitter and receiver ICs at 122 and 245 GHz in 0.13 µm SiGe BiCMOS technology together with an efficient on-chip antenna. A transmitter IC with 5 dBm output power and directional onchip power measurement for built-in-self-test is presented. A 122 GHz passive HBT diode mixer design is discussed and results are shown. The mixer exhibits superior 1/f noise performance which makes it especially suitable for FMCW/CW radar sensors. Furthermore a highly integrated 245 GHz transmitter with 1 dBm maximum output power was realized. The IC dissipates only 380 mW. A low-loss on-chip antenna for 130 GHz with 60% efficiency was implemented and measured. It uses localized backside etching techniques and allows for simplified and very cost-efficient mm-wave packaging}}, author = {{Scheytt, Christoph and Sun, Yaoming and Schmalz, Klaus and Wang, Ruoyu}}, booktitle = {{IMS 2012 (International Microwave Symposium)}}, location = {{Montreal, QC, Canada}}, title = {{{SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz}}}, doi = {{10.1109/MWSYM.2012.6259487}}, year = {{2012}}, } @inproceedings{24411, abstract = {{A 245 GHz transmitter for sensing applications has been realized, which consists of a push-push VCO with 1/64 frequency divider, a transformer- coupled one-stage power amplifier, and a frequency doubler. It is fabricated in 0.13μm SiGe:C BiCMOS technology with f T /f max of 300GHz/500GHz. The peak output power of the transmitter is 2 dBm. The 3-dB bandwidth reaches from 229 GHz to 251 GHz. The output power is 1 dBm at 245 GHz. The transmitter dissipates 0.29 W. Additionally, a test-circuit with an integrated two-stage power amplifier and a frequency doubler is presented, which reaches 1.4 dBm at 245 GHz and dissipates 0.19 W.}}, author = {{Schmalz, Klaus and Borngräber, Johannes and Heinemann, Bernd and Rücker, Holger and Scheytt, Christoph}}, booktitle = {{Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE}}, pages = {{195 --198}}, title = {{{A 245 GHz transmitter in SiGe technology}}}, doi = {{10.1109/RFIC.2012.6242262}}, year = {{2012}}, } @inproceedings{24412, abstract = {{In this publication an integrated dielectric sensor with read-out circuit in SiGe BiCMOS technology at 125GHz is presented. The sensor consist of a 500 µm shorted half-wave coplanar waveguide transmission line in the top metal layer. Read-out of the sensor is performed by measurement of its reflection coefficient with an integrated multiprobe reflectometer and signal source. The MMIC has been fabricated in a 190-GHz f T SiGe:C BiCMOS technology and assembled on a printed circuit board. Functionality of the sensor is demonstrated with a stimulus frequency from 118 to 133GHz with immersion of the sensor into a binary methanol-ethanol mixture.}}, author = {{Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger, Dietmar}}, booktitle = {{Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}}, pages = {{1 --3}}, title = {{{An integrated 125GHz Sensor with read-out circuit for permittivity measurement of liquids}}}, doi = {{10.1109/MWSYM.2012.6258392}}, year = {{2012}}, } @inproceedings{24413, abstract = {{In this paper, a novel fully digital modulator for a switch mode power amplifier (SMPA) is presented. The modulator converts the input baseband amplitude and phase signals into a two-level pulse train for driving an RF SMPA. The simulation results demonstrated a proof of the concept. The proposed architecture is analyzed in terms of accuracy by measuring EVM. The impact of the modulator parameters on the SMPA performance is investigated and corresponding results are shown. The modulator was simulated with a 20 MHz LTE signal.}}, author = {{Ostrovskyy, Philip and Scheytt, Christoph and Lee, SungJun and Park, BongHyuk and Jung, JaeHo}}, booktitle = {{Proc. IEEE Int Circuits and Systems (ISCAS) Symp}}, pages = {{2385--2388}}, title = {{{A fully digital polar modulator for switch mode RF power amplifier}}}, doi = {{10.1109/ISCAS.2012.6271777}}, year = {{2012}}, } @article{24414, abstract = {{We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.}}, author = {{Mehr, Wolfgang and Dabrowski, Jarek and Lemme, Max C. and Lippert, Gunther and Lupina, Grzegorz and Ostling, Mikael and Xie, Ya-Hong and Scheytt, Christoph}}, issn = {{1558-0563 }}, journal = {{(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering}}, number = {{5}}, pages = {{691--693}}, title = {{{Vertical Graphene Base Transistor}}}, doi = {{10.1109/LED.2012.2189193}}, volume = {{33}}, year = {{2012}}, } @inproceedings{24415, abstract = {{Millimeter-Wave (mm-W) is considered a potential technology for high-data rate wireless transmission and for high-resolution short-range radar, due to the 7-9 GHz bandwidth at the 60 GHz unlicensed band available worldwide. Developing ultrawideband architectures including multiple-input-multiple-output (MIMO) antenna systems at mm-W offer many advantages including jointly optimized analogue and digital signal processing at carrier frequency and baseband. This allows for flexible antenna designs and reduced losses, as many passive structures can be avoided at both sides of the link. Besides, based on flexible polarimetric approaches, the polarimetric propagation of electromagnetic waves can be exploited. In this paper we present a 60 GHz polarimetric MIMO system architecture, which includes analogue miniaturized frontends designed and manufactured by multi-layer packaging technologies. Such architecture permitted the design of compact MIMO radar and multi-dimensional channel sounding. The MIMO approach allows not only polarimetric filtering and fully polarimetric/directional signal processing to increase the signal-to-clutter-plus-noise ratio of mm-W radar systems, but also the full characterization of wireless channels including multipath with orthogonal polarizations.}}, author = {{Garcia-Ariza, Alexis-Paolo and Müller, Robert and Stephan, Ralf and Wollenschläger, Frank and Schulz, Alexander and Elkhouly, Mohamed and Scheytt, Christoph and Trautwein, Uwe and Müller, Jens and Thomae, Reiner and Hein, Matthias}}, booktitle = {{EuCAP2012 (European Conference on Antennas and Propagation)}}, pages = {{2578--2582}}, title = {{{60 GHz Polarimetric MIMO Sensing: architectures and technology}}}, doi = {{10.1109/EuCAP.2012.6206544}}, year = {{2012}}, } @inproceedings{24416, abstract = {{This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication.}}, author = {{Elkhouly, Mohamed and Glisic, Srdjan and Ellinger, Frank and Scheytt, Christoph}}, booktitle = {{GeMIC 2012}}, pages = {{1--4}}, title = {{{120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology}}}, year = {{2012}}, }