@inproceedings{24343, abstract = {{50 Jahre Moore‘s Gesetz ? „More Moore“ & „More than Moore“ ? Miniatur-Radar-System ? Silizium-Photonik für schnelle Kommunikation ? Photonischer Winkelsensor}}, author = {{Scheytt, Christoph}}, booktitle = {{HNI-Forum September }}, title = {{{Nano-/Mikroelektronik als Enabler für neue Ansätze}}}, year = {{2013}}, } @inproceedings{24345, author = {{Scheytt, Christoph}}, booktitle = {{RF-MST Cluster Workshop on MEMSWAVE 2013}}, title = {{{RF-MST Cluster Workshop on MEMSWAVE 2013}}}, year = {{2013}}, } @inproceedings{24340, author = {{Scheytt, Christoph and Kraemer, Rolf and Kallfass, Ingmar}}, booktitle = {{W 19 (EuMC \& EuMIC)}}, title = {{{Strategies for Energy-Efficient 100 Gb/s Baseband}}}, year = {{2013}}, } @inproceedings{24341, abstract = {{This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm 2 .}}, author = {{Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}}, booktitle = {{IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}}, title = {{{A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology }}}, doi = {{10.1109/BCTM.2013.6798158}}, year = {{2013}}, } @inproceedings{24342, abstract = {{Two half-wavelength 122 GHz patch antennas were designed and manufactured by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer. It enables the full integration of the millimeter-wave transceiver circuits and the antennas on a single chip to simplify the packaging procedure at millimeter-wave frequencies, thereby reducing the cost. The two patch antennas are fed by different feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled feed. They exhibit similar performance and offer the flexibility of designing the interconnects (feed lines routing) between the circuits and the antennas within the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency of about 50%.}}, author = {{Wang, Ruoyu and Kaynak, Mehmet and Sun, Yaoming and Borngräber, Johannes and Beer, Stefan and Goettel, B. and Scheytt, Christoph}}, booktitle = {{24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications}}, title = {{{122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications}}}, doi = {{10.1109/PIMRC.2013.6666358}}, year = {{2013}}, } @article{24347, abstract = {{In this paper, an integrated dielectric sensor with a read-out circuit in an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists of a 500-μm shorted half-wave coplanar-waveguide transmission line in the uppermost metal layer of the silicon process, while the read-out is obtained by reflection coefficient measurement with an integrated reflectometer and a signal source. The reflectometer is verified with a circuit breakout including an integrated dummy sensor. The reflectometer is able to measure the phase of the reflection coefficient from 117 to 134 GHz with a resolution of 0.1° and a standard deviation of 0.082°. The integrated sensor with the reflectometer circuit have been fabricated in a 190-GHz fT SiGe:C BiCMOS technology. It spans an area of 1.4 mm 2 and consumes 75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit board for characterization by immersion into test liquids. The sensor is controlled by a controller board and a personal computer enabling a measurement time of up to 1 ms per frequency point. Functionality of the sensor is demonstrated from 118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol mixtures, showing good correlation between theory and measurement. The sensor shows a standard deviation of the measured phase of 0.220° and is able to detect a difference in ε' r of 0.0125}}, author = {{Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger, Dietmar}}, journal = {{Microwave Theory and Techniques, IEEE Transactions on}}, number = {{5}}, pages = {{2185--2194}}, title = {{{A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology}}}, doi = {{10.1109/TMTT.2013.2253792}}, volume = {{61}}, year = {{2013}}, } @inproceedings{24348, author = {{Scheytt, Christoph and Grau, Günter}}, booktitle = {{Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut}}, title = {{{Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren}}}, year = {{2013}}, } @inproceedings{24346, author = {{Scheytt, Christoph}}, booktitle = {{System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave Radar Sensors}}, title = {{{Introduction to Integrated mm‐Wave Sensors}}}, year = {{2013}}, } @article{24350, abstract = {{This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication.}}, author = {{Elkhouly, Mohamed and Glisic, Srdjan and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}}, journal = {{Microwave Theory and Techniques, IEEE Transactions on}}, number = {{99}}, pages = {{1--13}}, title = {{{220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology}}}, doi = {{10.1109/TMTT.2013.2258032}}, volume = {{PP}}, year = {{2013}}, } @article{24352, abstract = {{This paper analyses substrate-related spurious tones in fractional-N phase- locked loops with integrated VCOs. Spur positions are calculated and experimentally verified as a function of the divider ratios of prescaler and programmable divider. For an integrated wideband PLL in SiGe BiCMOS technology the spur power levels are measured and compared with theoretical expectations. The power in these spurs is minimized by layout techniques shielding the reference input buffer. Spur minimization by using a variable reference frequency is experimentally demonstrated. Based on this observation, a programmable integer-N PLL for driving the fractional-N synthesizer is suggested to reduce the worst-case spur level significantly. Index Terms — Fractional-N, frequency synthesizers, fractional spurs, substrate spurs, phase-locked loops (PLLs), phase noise. }}, author = {{Osmany, Sabbir Ahmed and Herzel, Frank and Scheytt, Christoph}}, journal = {{Analog Integrated Circuits and Signal Processing}}, number = {{3}}, pages = {{545--556}}, title = {{{Analysis and minimization of substrate spurs in fractional-N frequency synthesizers}}}, doi = {{10.1007/s10470-012-0002-x}}, volume = {{74}}, year = {{2013}}, } @inproceedings{24349, abstract = {{This paper presents the packaging technology and the integrated antenna design for a miniaturized 122-GHz radar sensor. The package layout and the assembly process are shortly explained. Measurements of the antenna including the flip chip interconnect are presented that have been achieved by replacing the IC with a dummy chip that only contains a through-line. Afterwards, radiation pattern measurements are shown that were recorded using the radar sensor as transmitter. Finally, details of the fully integrated radar sensor are given, together with results of the first Doppler measurements.}}, author = {{Beer, Stefan and Girma, Mekdes Gebresilassie and Sun, Yaoming and Winkler, Wolfgang and Debski, Wojciech and Paaso, Jaska and Kunkel, Gerhard and Scheytt, Christoph and Hasch, Jürgen and Zwick, Thomas}}, booktitle = {{7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION}}, title = {{{Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC}}}, year = {{2013}}, } @inproceedings{24351, abstract = {{We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology, enables error-free data recovery of heavily distorted signals transmitted at a bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer reported yet utilizes a novel 1-tap look-ahead architecture.}}, author = {{Möller, Lothar and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas}}, booktitle = {{Optical Fiber Communication Conference}}, title = {{{80 Gb/s Decision Feedback Equalizer for Intersymbol Interference}}}, doi = {{10.1364/OFC.2013.OW4B.2 }}, year = {{2013}}, } @inproceedings{24401, abstract = {{A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single- side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW.}}, author = {{Mao, Yanfei and Scheytt, Christoph and Schmalz, Klaus and Borngräber, Johannes}}, booktitle = {{Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}}, pages = {{183--186}}, title = {{{245 GHz subharmonic receiver in SiGe}}}, year = {{2012}}, } @inproceedings{24402, abstract = {{The design of a complex integrated transceiver for 121–124 GHz is presented. The transceiver consists of the transmitter with VCO, power amplifier and power detectors, the receiver with LNA, two mixers for quadrature receive path and variable gain amplifiers for IF-output and the digital control circuits with SPI-interface. A central part is the VCO with DAC and memory for on-chip storage of programmable frequency ramps for FMCW radar applications. The oscillator phase noise is -92 dBc/Hz at 1MHz offset. For calibration of the radar-system on chip, a frequency measurement unit is integrated. The radar chip has power consumption of 380 mW and occupies an area of 1.8 mm x 1.5 mm. Several examples of frequency ramp generation are presented. The chip is intended for integration together with antenna in a single package.}}, author = {{Debski, Wojciech and Winkler, Wolfgang and Sun, Yaoming and Marinkovic, Miroslav and Borngräber, Johannes and Scheytt, Christoph}}, booktitle = {{Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}}, pages = {{191--194}}, title = {{{120 GHz Radar Mixed-Signal Transceiver}}}, year = {{2012}}, } @inproceedings{24403, abstract = {{A passive microwave sensor based on microstrip lines for characterizing cell cultivation in aqueous compartments is presented. The proposed design methodology leads to a highly sensitive biosensor structure, which is fabricated on Rogers 3003 material. It is shown that a sufficiently high sensitivity is achieved to monitor the cultivation stadium of a yeast culture based on detection of permittivity changes. The obtained measurement results show good agreement with the performed full 3D EM simulations. According to these results the presented biosensor is capable of characterizing the stage of yeast cultivation label-free and contactless.}}, author = {{Wessel, Jan and Schmalz, Klaus and Cahill, Brian and Gastrock, Gunter and Scheytt, Christoph}}, booktitle = {{Microwave Conference (EuMC), 2012 42nd European}}, title = {{{Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries}}}, doi = {{10.23919/EuMC.2012.6459231 }}, year = {{2012}}, } @inproceedings{24405, abstract = {{Abstract— This paper presents a fully digital transmitter architecture based on a digital polar modulator (DPM) and switch-mode power amplifier (SMPA). A simple method for comparison and estimation of different digital modulation techniques for SMPA is described. An estimation of the proposed digital polar modulator properties was done by means of a 2.1..2.2 GHz class-F power amplifier. For a CDMA signal with 9.5 dB peak-to-average power ratio (PAPR), the class-F based amplifier module driven by DPM pulse train shows more than 1 W output power and more than 10 % of drain efficiency. }}, author = {{Ostrovskyy, Philip and Heuermann, Holger and Sadeghfam, Arash and Scheytt, Christoph}}, booktitle = {{Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}}, location = {{Amsterdam}}, pages = {{659--662}}, title = {{{Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier}}}, doi = {{10.23919/EuMC.2012.6459419}}, year = {{2012}}, } @article{24406, abstract = {{A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single- side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW. Index Terms— SiGe technology, millimeter-wave circuits, 245 GHz, CB LNA, SHM, VCO, sub-harmonic receiver.}}, author = {{Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}}, journal = {{Microwave Theory and Techniques, IEEE Transactions on}}, number = {{99}}, pages = {{183--186}}, title = {{{245-GHz subharmonic receiver in SiGe }}}, volume = {{PP}}, year = {{2012}}, } @article{24407, abstract = {{A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes switching conditions for the amplification stage of the switch-mode power amplifier in comparison to the BDSM architecture. The BDSM is clocked at 5 GHz, while the notch frequency can be tuned in a range of 2.1-2.2 GHz. The modulator achieves 46.6-dB signal-to-noise and distortion ratio in 10-MHz bandwidth for a sine-wave input at 2.2 GHz consuming 330 mW from a 3-V supply. The BDSM was also tested with a single-channel WCDMA signal. It has demonstrated 42.2-dBc adjacent channel leakage ratio at 5-MHz offset and less than 2.1% error vector magnitude over the tuning range.}}, author = {{Ostrovskyy, Philip and Gustat, Hans and Ortmanns, Maurits and Scheytt, Christoph}}, issn = {{1557-9670}}, journal = {{Microwave Theory and Techniques, IEEE Transactions on}}, number = {{8}}, pages = {{2524--2531}}, title = {{{A 5-Gb/s 2.1–2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier}}}, doi = {{10.1109/TMTT.2012.2203143}}, volume = {{60}}, year = {{2012}}, } @article{24408, abstract = {{This paper presents a 60-GHz SiGe PA with a 29.2% power-added efficiency (PAE), a peak power of 16.8 dBm, and a peak output 1-dB compression (OP 1dB ) of 14 dBm. Its measured gain is 13.5 dB at 60 GHz with a corresponding 3-dB bandwidth of 47-74 GHz. The PAE is above 25% with a supply voltage from 2.2 to 4 V. A cascode stage has been analyzed and used as the amplifier core. The high PAE is achieved by pushing the upper transistor of the cascode stage to weak avalanche area and correct transistor sizing. The linearity is achieved by optimizing the input matching and emitter degeneration. Safe operation conditions of heterojunction bipolar transistors at dc and high frequencies have been investigated at weak avalanche area. A safe operation boundary for high frequencies is given based on our experimental results and analytical derivations. Large-signal stress tests have shown there is no performance degradation and have proved the validity of this safe operation boundary.}}, author = {{Sun, Yaoming and Fischer, Gerhard G. and Scheytt, Christoph}}, issn = {{1557-9670 }}, journal = {{Microwave Theory and Techniques, IEEE Transactions on}}, number = {{8}}, pages = {{ 2581 -- 2589}}, title = {{{A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche}}}, doi = {{10.1109/TMTT.2012.2202684}}, volume = {{60}}, year = {{2012}}, } @article{24409, abstract = {{We propose a new circuit for the realization of transimpedance amplifiers (TIAs), targeted at reducing the input-referred noise of the TIA or alternatively increasing the bandwidth, without increasing the power dissipation. An intensive theoretical analysis of the method is given. A prototype chip is fabricated in 0.25- μm SiGe BiCMOS technology. The TIA has a gain of 71 dBΩ , a bandwidth of 20.5 GHz, and an average input-referred current noise density of 18 pA/√Hz . The circuit operates from a 2.5-V supply, and power dissipation is 57 mW.}}, author = {{Sedighi, Behnam and Scheytt, Christoph}}, journal = {{(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering}}, number = {{8}}, pages = {{461--465}}, title = {{{Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links}}}, doi = {{10.1109/TCSII.2012.2204118}}, volume = {{59}}, year = {{2012}}, }