[{"citation":{"chicago":"Koppelmann, Bastian, Bernd Messidat, Markus Becker, Christoph Kuznik, Wolfgang Müller, and J. Christoph Scheytt. “Fast and Open Virtual Platforms for TriCore-Based SoCs Using QEMU.” <i>Design and Verification Conference (DVCON EUROPE)</i>, 2014.","ieee":"B. Koppelmann, B. Messidat, M. Becker, C. Kuznik, W. Müller, and J. C. Scheytt, “Fast and Open Virtual Platforms for TriCore-based SoCs Using QEMU,” <i>Design and Verification Conference (DVCON EUROPE)</i>, 2014.","ama":"Koppelmann B, Messidat B, Becker M, Kuznik C, Müller W, Scheytt JC. Fast and Open Virtual Platforms for TriCore-based SoCs Using QEMU. <i>Design and Verification Conference (DVCON EUROPE)</i>. Published online 2014.","short":"B. Koppelmann, B. Messidat, M. Becker, C. Kuznik, W. Müller, J.C. Scheytt, Design and Verification Conference (DVCON EUROPE) (2014).","bibtex":"@article{Koppelmann_Messidat_Becker_Kuznik_Müller_Scheytt_2014, title={Fast and Open Virtual Platforms for TriCore-based SoCs Using QEMU}, journal={Design and Verification Conference (DVCON EUROPE)}, author={Koppelmann, Bastian and Messidat, Bernd and Becker, Markus and Kuznik, Christoph and Müller, Wolfgang and Scheytt, J. Christoph}, year={2014} }","mla":"Koppelmann, Bastian, et al. “Fast and Open Virtual Platforms for TriCore-Based SoCs Using QEMU.” <i>Design and Verification Conference (DVCON EUROPE)</i>, 2014.","apa":"Koppelmann, B., Messidat, B., Becker, M., Kuznik, C., Müller, W., &#38; Scheytt, J. C. (2014). Fast and Open Virtual Platforms for TriCore-based SoCs Using QEMU. <i>Design and Verification Conference (DVCON EUROPE)</i>."},"year":"2014","title":"Fast and Open Virtual Platforms for TriCore-based SoCs Using QEMU","date_created":"2021-09-29T10:47:35Z","author":[{"last_name":"Koppelmann","id":"25260","full_name":"Koppelmann, Bastian","first_name":"Bastian"},{"last_name":"Messidat","full_name":"Messidat, Bernd","first_name":"Bernd"},{"full_name":"Becker, Markus","last_name":"Becker","first_name":"Markus"},{"full_name":"Kuznik, Christoph","last_name":"Kuznik","first_name":"Christoph"},{"first_name":"Wolfgang","last_name":"Müller","id":"16243","full_name":"Müller, Wolfgang"},{"first_name":"J. Christoph","orcid":"https://orcid.org/0000-0002-5950-6618","last_name":"Scheytt","full_name":"Scheytt, J. Christoph","id":"37144"}],"date_updated":"2025-02-26T14:44:48Z","status":"public","type":"journal_article","publication":"Design and Verification Conference (DVCON EUROPE)","language":[{"iso":"eng"}],"user_id":"5786","department":[{"_id":"672"}],"_id":"25117"},{"_id":"24356","user_id":"15931","department":[{"_id":"58"}],"language":[{"iso":"eng"}],"type":"conference","publication":"Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on","abstract":[{"text":"A fully integrated six-port receiver front-end at 120 GHz center frequency including a low-noise-amplifier, a passive six-port network, a VCO, and four direct converters is presented in this publication. The overall architecture of the designed six-port receiver is analyzed and fundamental theory of the receiver given. The design of the six-port building blocks is described and measurement results are presented. All circuits have been fabricated in a 0.13μm 300-GHz f T SiGe BiCMOS technology. The fully integrated receiver consumes 85.9 rnA from a 3.3-V supply and occupies an area of 1.03mm 2 . The receiver includes a VCO with a center frequency of 117.15 GHz, a tuning range of 2.7 GHz, and a phase noise of -86 dBc/Hz at 1 MHz offset. The LNA shows a gain of 12 dB, a 3-dB bandwidth of 30 GHz at a power consumption of 9.2 rnA. The six-port core has a conversion gain of 3.6 dB, a P 1dB of -12 dBm, and a power consumption of 28 rnA. The overall receiver shows a conversion gain of 2.4 dB at 120 GHz and P 1dB of -17 dBm.","lang":"eng"}],"status":"public","date_updated":"2022-02-17T09:02:41Z","author":[{"first_name":"Benjamin","full_name":"Laemmle, Benjamin","last_name":"Laemmle"},{"last_name":"Schmalz","full_name":"Schmalz, Klaus","first_name":"Klaus"},{"full_name":"Borngräber, Johannes","last_name":"Borngräber","first_name":"Johannes"},{"last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144","first_name":"Christoph"},{"first_name":"Robert","full_name":"Weigel, Robert","last_name":"Weigel"},{"first_name":"Alexander","full_name":"Koelpin, Alexander","last_name":"Koelpin"},{"first_name":"Dietmar","last_name":"Kissinger","full_name":"Kissinger, Dietmar"}],"date_created":"2021-09-14T09:22:35Z","title":"A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology","conference":{"start_date":"2013.01.21","end_date":"2013.01.23"},"doi":"10.1109/SiRF.2013.6489455","publication_identifier":{"eisbn":["978-1-4673-1553-1"]},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6489455","relation":"confirmation"}]},"year":"2013","citation":{"chicago":"Laemmle, Benjamin, Klaus Schmalz, Johannes Borngräber, Christoph Scheytt, Robert Weigel, Alexander Koelpin, and Dietmar Kissinger. “A Fully Integrated 120-GHz Six-Port Receiver Front-End in a 130-Nm SiGe BiCMOS Technology.” In <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013. <a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">https://doi.org/10.1109/SiRF.2013.6489455</a>.","ieee":"B. Laemmle <i>et al.</i>, “A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology,” 2013, doi: <a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">10.1109/SiRF.2013.6489455</a>.","ama":"Laemmle B, Schmalz K, Borngräber J, et al. A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology. In: <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">10.1109/SiRF.2013.6489455</a>","short":"B. Laemmle, K. Schmalz, J. Borngräber, C. Scheytt, R. Weigel, A. Koelpin, D. Kissinger, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013.","mla":"Laemmle, Benjamin, et al. “A Fully Integrated 120-GHz Six-Port Receiver Front-End in a 130-Nm SiGe BiCMOS Technology.” <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013, doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">10.1109/SiRF.2013.6489455</a>.","bibtex":"@inproceedings{Laemmle_Schmalz_Borngräber_Scheytt_Weigel_Koelpin_Kissinger_2013, title={A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology}, DOI={<a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">10.1109/SiRF.2013.6489455</a>}, booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on}, author={Laemmle, Benjamin and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph and Weigel, Robert and Koelpin, Alexander and Kissinger, Dietmar}, year={2013} }","apa":"Laemmle, B., Schmalz, K., Borngräber, J., Scheytt, C., Weigel, R., Koelpin, A., &#38; Kissinger, D. (2013). A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology. <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>. <a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">https://doi.org/10.1109/SiRF.2013.6489455</a>"}},{"language":[{"iso":"eng"}],"department":[{"_id":"58"}],"user_id":"15931","_id":"24355","status":"public","abstract":[{"lang":"eng","text":"Impulse-radio ultra-wideband systems (IR-UWB) provide short-range wireless communication and precise localization simultaneously. Especially non-coherent IR-UWB reduces the system complexity which enables the design of low-power receivers. This paper presents an integrating digitizer which integrates rectified baseband pulses of an IR-UWB signal and provides the digitized data to the digital baseband of the receiver. The integrator is composed of two time-interleaved (TI) operational amplifiers with capacitive feedback. With this structure, the integrator can be periodically reset without introducing a dead time between two integration periods. The analog-to-digital conversion is performed by a 6 bit 62.4 MS/s successive approximation register analog-to-digital converter (SAR ADC). The integrating digitizer chip is realized in a 250 nm SiGe:C BiCMOS technology from IHP."}],"publication":"Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on","type":"conference","doi":"10.1109/SiRF.2013.6489443","conference":{"end_date":"2013.01.23","start_date":"2013.01.21"},"title":"Integrator and digitizer for a non-coherent IR-UWB receiver","author":[{"last_name":"Digel","full_name":"Digel, Johannes","first_name":"Johannes"},{"last_name":"Masini","full_name":"Masini, Michelangelo","first_name":"Michelangelo"},{"last_name":"Grözing","full_name":"Grözing, Markus","first_name":"Markus"},{"full_name":"Berroth, Manfred","last_name":"Berroth","first_name":"Manfred"},{"last_name":"Fischer","full_name":"Fischer, Gunter","first_name":"Gunter"},{"first_name":"Sonom","full_name":"Olonbayar, Sonom","last_name":"Olonbayar"},{"first_name":"Hans","full_name":"Gustat, Hans","last_name":"Gustat"},{"last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph"}],"date_created":"2021-09-14T09:22:33Z","date_updated":"2022-02-17T09:01:16Z","page":"93-95","citation":{"mla":"Digel, Johannes, et al. “Integrator and Digitizer for a Non-Coherent IR-UWB Receiver.” <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013, pp. 93–95, doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">10.1109/SiRF.2013.6489443</a>.","bibtex":"@inproceedings{Digel_Masini_Grözing_Berroth_Fischer_Olonbayar_Gustat_Scheytt_2013, title={Integrator and digitizer for a non-coherent IR-UWB receiver}, DOI={<a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">10.1109/SiRF.2013.6489443</a>}, booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on}, author={Digel, Johannes and Masini, Michelangelo and Grözing, Markus and Berroth, Manfred and Fischer, Gunter and Olonbayar, Sonom and Gustat, Hans and Scheytt, Christoph}, year={2013}, pages={93–95} }","short":"J. Digel, M. Masini, M. Grözing, M. Berroth, G. Fischer, S. Olonbayar, H. Gustat, C. Scheytt, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013, pp. 93–95.","apa":"Digel, J., Masini, M., Grözing, M., Berroth, M., Fischer, G., Olonbayar, S., Gustat, H., &#38; Scheytt, C. (2013). Integrator and digitizer for a non-coherent IR-UWB receiver. <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 93–95. <a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">https://doi.org/10.1109/SiRF.2013.6489443</a>","ama":"Digel J, Masini M, Grözing M, et al. Integrator and digitizer for a non-coherent IR-UWB receiver. In: <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>. ; 2013:93-95. doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">10.1109/SiRF.2013.6489443</a>","chicago":"Digel, Johannes, Michelangelo Masini, Markus Grözing, Manfred Berroth, Gunter Fischer, Sonom Olonbayar, Hans Gustat, and Christoph Scheytt. “Integrator and Digitizer for a Non-Coherent IR-UWB Receiver.” In <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 93–95, 2013. <a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">https://doi.org/10.1109/SiRF.2013.6489443</a>.","ieee":"J. Digel <i>et al.</i>, “Integrator and digitizer for a non-coherent IR-UWB receiver,” in <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on</i>, 2013, pp. 93–95, doi: <a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">10.1109/SiRF.2013.6489443</a>."},"year":"2013","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6489443"}]},"publication_identifier":{"eisbn":["978-1-4673-1553-1"]}},{"language":[{"iso":"eng"}],"user_id":"15931","department":[{"_id":"58"}],"_id":"24353","status":"public","abstract":[{"text":"This paper presents an integrated mixed-signal 120GHz FMCW/CW radar chipset in a 0.13μm SiGe BiCMOS technology. It features on-chip MMW built-in-self-test (BIST) circuits, a harmonic transceiver, software linearization (SWL) circuits and a digital interface. This chipset has been tested in a low-cost package, where the antennas are integrated. Above 100GHz, our transceiver has achieved state-ofthe-art integration level and receiver linearity, and DC power consumption.","lang":"eng"}],"type":"conference","publication":"Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International","conference":{"start_date":"2013.02.17","end_date":"2013.02.21"},"doi":"10.1109/ISSCC.2013.6487676","title":"A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization","author":[{"full_name":"Sun, Yaoming","last_name":"Sun","first_name":"Yaoming"},{"full_name":"Marinkovic, Miroslav","last_name":"Marinkovic","first_name":"Miroslav"},{"last_name":"Fischer","full_name":"Fischer, Gunter","first_name":"Gunter"},{"last_name":"Winkler","full_name":"Winkler, Wolfgang","first_name":"Wolfgang"},{"last_name":"Debski","full_name":"Debski, Wojciech","first_name":"Wojciech"},{"last_name":"Beer","full_name":"Beer, Stefan","first_name":"Stefan"},{"last_name":"Zwick","full_name":"Zwick, Thomas","first_name":"Thomas"},{"full_name":"Girma, Mekdes Gebresilassie","last_name":"Girma","first_name":"Mekdes Gebresilassie"},{"last_name":"Hasch","full_name":"Hasch, Jürgen","first_name":"Jürgen"},{"last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph"}],"date_created":"2021-09-14T09:22:31Z","date_updated":"2022-02-17T08:57:43Z","citation":{"bibtex":"@inproceedings{Sun_Marinkovic_Fischer_Winkler_Debski_Beer_Zwick_Girma_Hasch_Scheytt_2013, title={A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization}, DOI={<a href=\"https://doi.org/10.1109/ISSCC.2013.6487676\">10.1109/ISSCC.2013.6487676</a>}, booktitle={Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International}, author={Sun, Yaoming and Marinkovic, Miroslav and Fischer, Gunter and Winkler, Wolfgang and Debski, Wojciech and Beer, Stefan and Zwick, Thomas and Girma, Mekdes Gebresilassie and Hasch, Jürgen and Scheytt, Christoph}, year={2013}, pages={148–149} }","short":"Y. Sun, M. Marinkovic, G. Fischer, W. Winkler, W. Debski, S. Beer, T. Zwick, M.G. Girma, J. Hasch, C. Scheytt, in: Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International, 2013, pp. 148–149.","mla":"Sun, Yaoming, et al. “A Low-Cost Miniature 120GHz SiP FMCW/CW Radar Sensor with Software Linearization.” <i>Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International</i>, 2013, pp. 148–49, doi:<a href=\"https://doi.org/10.1109/ISSCC.2013.6487676\">10.1109/ISSCC.2013.6487676</a>.","apa":"Sun, Y., Marinkovic, M., Fischer, G., Winkler, W., Debski, W., Beer, S., Zwick, T., Girma, M. G., Hasch, J., &#38; Scheytt, C. (2013). A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization. <i>Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International</i>, 148–149. <a href=\"https://doi.org/10.1109/ISSCC.2013.6487676\">https://doi.org/10.1109/ISSCC.2013.6487676</a>","ieee":"Y. Sun <i>et al.</i>, “A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization,” in <i>Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International</i>, 2013, pp. 148–149, doi: <a href=\"https://doi.org/10.1109/ISSCC.2013.6487676\">10.1109/ISSCC.2013.6487676</a>.","chicago":"Sun, Yaoming, Miroslav Marinkovic, Gunter Fischer, Wolfgang Winkler, Wojciech Debski, Stefan Beer, Thomas Zwick, Mekdes Gebresilassie Girma, Jürgen Hasch, and Christoph Scheytt. “A Low-Cost Miniature 120GHz SiP FMCW/CW Radar Sensor with Software Linearization.” In <i>Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International</i>, 148–49, 2013. <a href=\"https://doi.org/10.1109/ISSCC.2013.6487676\">https://doi.org/10.1109/ISSCC.2013.6487676</a>.","ama":"Sun Y, Marinkovic M, Fischer G, et al. A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization. In: <i>Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International</i>. ; 2013:148-149. doi:<a href=\"https://doi.org/10.1109/ISSCC.2013.6487676\">10.1109/ISSCC.2013.6487676</a>"},"page":"148-149","year":"2013","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6487676","relation":"confirmation"}]},"publication_identifier":{"eisbn":["978-1-4673-4516-3"]}},{"type":"conference","publication":"Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on","abstract":[{"text":"Complex integrated 122 and 245 GHz SiGe BiCMOS transceiver ICs as well as an efficient broadband on-chip antenna are presented. The ICs target radar and sensing applications for the ISM bands at 122 and 245 GHz. Due to high level of integration and basic mm-wave self-testing production as well as test cost are dramatically reduced. Furthermore a compact and efficient on-chip antenna allows for chip-on-board mounting without RF interfaces.","lang":"eng"}],"status":"public","_id":"24357","user_id":"15931","department":[{"_id":"58"}],"language":[{"iso":"eng"}],"publication_identifier":{"eisbn":["978-1-4673-1553-1"]},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6489494"}]},"place":"Austin TX","year":"2013","citation":{"apa":"Scheytt, C., Sun, Y., Schmalz, K., Mao, Y., Wang, R., Debski, W., &#38; Winkler, W. (2013). Towards mm-wave System-On-Chip with integrated antennas for low-cost 122 and 245 GHz radar sensors. <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 246–248. <a href=\"https://doi.org/10.1109/SiRF.2013.6489494\">https://doi.org/10.1109/SiRF.2013.6489494</a>","mla":"Scheytt, Christoph, et al. “Towards Mm-Wave System-On-Chip with Integrated Antennas for Low-Cost 122 and 245 GHz Radar Sensors.” <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013, pp. 246–48, doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489494\">10.1109/SiRF.2013.6489494</a>.","bibtex":"@inproceedings{Scheytt_Sun_Schmalz_Mao_Wang_Debski_Winkler_2013, place={Austin TX}, title={Towards mm-wave System-On-Chip with integrated antennas for low-cost 122 and 245 GHz radar sensors}, DOI={<a href=\"https://doi.org/10.1109/SiRF.2013.6489494\">10.1109/SiRF.2013.6489494</a>}, booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on}, author={Scheytt, Christoph and Sun, Yaoming and Schmalz, Klaus and Mao, Yanfei and Wang, Ruoyu and Debski, Wojciech and Winkler, Wolfgang}, year={2013}, pages={246–248} }","short":"C. Scheytt, Y. Sun, K. Schmalz, Y. Mao, R. Wang, W. Debski, W. Winkler, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, Austin TX, 2013, pp. 246–248.","chicago":"Scheytt, Christoph, Yaoming Sun, Klaus Schmalz, Yanfei Mao, Ruoyu Wang, Wojciech Debski, and Wolfgang Winkler. “Towards Mm-Wave System-On-Chip with Integrated Antennas for Low-Cost 122 and 245 GHz Radar Sensors.” In <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 246–48. Austin TX, 2013. <a href=\"https://doi.org/10.1109/SiRF.2013.6489494\">https://doi.org/10.1109/SiRF.2013.6489494</a>.","ieee":"C. Scheytt <i>et al.</i>, “Towards mm-wave System-On-Chip with integrated antennas for low-cost 122 and 245 GHz radar sensors,” in <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on</i>, 2013, pp. 246–248, doi: <a href=\"https://doi.org/10.1109/SiRF.2013.6489494\">10.1109/SiRF.2013.6489494</a>.","ama":"Scheytt C, Sun Y, Schmalz K, et al. Towards mm-wave System-On-Chip with integrated antennas for low-cost 122 and 245 GHz radar sensors. In: <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>. ; 2013:246-248. doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489494\">10.1109/SiRF.2013.6489494</a>"},"page":"246-248","date_updated":"2022-02-17T09:03:54Z","author":[{"first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144"},{"full_name":"Sun, Yaoming","last_name":"Sun","first_name":"Yaoming"},{"first_name":"Klaus","full_name":"Schmalz, Klaus","last_name":"Schmalz"},{"first_name":"Yanfei","last_name":"Mao","full_name":"Mao, Yanfei"},{"first_name":"Ruoyu","full_name":"Wang, Ruoyu","last_name":"Wang"},{"full_name":"Debski, Wojciech","last_name":"Debski","first_name":"Wojciech"},{"full_name":"Winkler, Wolfgang","last_name":"Winkler","first_name":"Wolfgang"}],"date_created":"2021-09-14T09:22:36Z","title":"Towards mm-wave System-On-Chip with integrated antennas for low-cost 122 and 245 GHz radar sensors","doi":"10.1109/SiRF.2013.6489494","conference":{"start_date":"2013.01.21","end_date":"2013.01.23"}},{"author":[{"first_name":"Arzu","full_name":"Ergintav, Arzu","last_name":"Ergintav"},{"first_name":"Yaoming","last_name":"Sun","full_name":"Sun, Yaoming"},{"last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph"},{"first_name":"Yasar","last_name":"Gürbüz","full_name":"Gürbüz, Yasar"}],"date_created":"2021-09-14T09:22:32Z","date_updated":"2022-02-17T08:59:40Z","conference":{"start_date":"2013.01.21","end_date":"2013.01.23"},"doi":"10.1109/SiRF.2013.6489451","title":"49 GHz 6-bit programmable divider in SiGe BiCMOS","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6489451","relation":"confirmation"}]},"citation":{"bibtex":"@inproceedings{Ergintav_Sun_Scheytt_Gürbüz_2013, title={49 GHz 6-bit programmable divider in SiGe BiCMOS}, DOI={<a href=\"https://doi.org/10.1109/SiRF.2013.6489451\">10.1109/SiRF.2013.6489451</a>}, booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on}, author={Ergintav, Arzu and Sun, Yaoming and Scheytt, Christoph and Gürbüz, Yasar}, year={2013} }","mla":"Ergintav, Arzu, et al. “49 GHz 6-Bit Programmable Divider in SiGe BiCMOS.” <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013, doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489451\">10.1109/SiRF.2013.6489451</a>.","short":"A. Ergintav, Y. Sun, C. Scheytt, Y. Gürbüz, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013.","apa":"Ergintav, A., Sun, Y., Scheytt, C., &#38; Gürbüz, Y. (2013). 49 GHz 6-bit programmable divider in SiGe BiCMOS. <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>. <a href=\"https://doi.org/10.1109/SiRF.2013.6489451\">https://doi.org/10.1109/SiRF.2013.6489451</a>","ama":"Ergintav A, Sun Y, Scheytt C, Gürbüz Y. 49 GHz 6-bit programmable divider in SiGe BiCMOS. In: <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489451\">10.1109/SiRF.2013.6489451</a>","ieee":"A. Ergintav, Y. Sun, C. Scheytt, and Y. Gürbüz, “49 GHz 6-bit programmable divider in SiGe BiCMOS,” 2013, doi: <a href=\"https://doi.org/10.1109/SiRF.2013.6489451\">10.1109/SiRF.2013.6489451</a>.","chicago":"Ergintav, Arzu, Yaoming Sun, Christoph Scheytt, and Yasar Gürbüz. “49 GHz 6-Bit Programmable Divider in SiGe BiCMOS.” In <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013. <a href=\"https://doi.org/10.1109/SiRF.2013.6489451\">https://doi.org/10.1109/SiRF.2013.6489451</a>."},"year":"2013","department":[{"_id":"58"}],"user_id":"15931","_id":"24354","language":[{"iso":"eng"}],"publication":"Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on","type":"conference","status":"public","abstract":[{"text":"In this paper, a 6-bit true modular programmable frequency divider with division ratios ranging from 64 to 127 is reported. It is composed of a divider chain of 6 divide-by-2/3 cells, and ECL stages that are introduced as synchronization circuits for programming inputs. The synchronization circuits have CMOS input for compatibility with programming circuits. The stand-alone divider chain is functional up to an input clock frequency of 49 GHz. The combination of the divider chain with synchronization circuits is functional up to 44 GHz. The 6 stage divider draws 34 mA current from a 2.7 V supply. The synchronization circuits draw 30 mA from a 3 V supply. The circuit is fabricated in a 0.13 μm SiGe BiCMOS technology, and is well suited for millimeter-wave phase-locked loop (PLL) circuits which require fine frequency resolution.","lang":"eng"}]},{"publication":"2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","type":"conference","status":"public","abstract":[{"lang":"eng","text":"Two subharmonic receivers for 245 GHz spectroscopy sensor applications in the 245 GHz ISM band have been proposed. One receiver consists of an 2nd APDP (antiparallel diode pair) passive SHM (subharmonic mixer), a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA (power amplifier). The other consists of a single-ended four-stage CB (common base) LNA, an 2 nd APDP passive SHM, an IF amplifier, a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA. The receivers are fabricated in a SiGe:C BiCMOS technology with f T /f max =300/500 GHz. The measured conversion gain are -17 dB rsp. 10.6 dB at 245 GHz with 3-dB bandwidths of 13 GHz rsp. 14 GHz, and the single-side band noise figure are 17 dB rsp. 20 dB; the two receivers dissipates a power of 213 mW and 312 mW, respectively."}],"department":[{"_id":"58"}],"user_id":"15931","_id":"24361","language":[{"iso":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6569533"}]},"publication_identifier":{"eisbn":["978-1-4673-6062-3"]},"citation":{"mla":"Mao, Yanfei, et al. “245 GHz Subharmonic Receivers in SiGe.” <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium</i>, 2013, doi:<a href=\"https://doi.org/10.1109/RFIC.2013.6569533\">10.1109/RFIC.2013.6569533</a>.","short":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, in: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013.","bibtex":"@inproceedings{Mao_Schmalz_Borngräber_Scheytt_2013, place={Seattle, Washington}, title={245 GHz subharmonic receivers in SiGe}, DOI={<a href=\"https://doi.org/10.1109/RFIC.2013.6569533\">10.1109/RFIC.2013.6569533</a>}, booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}, year={2013} }","apa":"Mao, Y., Schmalz, K., Borngräber, J., &#38; Scheytt, C. (2013). 245 GHz subharmonic receivers in SiGe. <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium</i>. <a href=\"https://doi.org/10.1109/RFIC.2013.6569533\">https://doi.org/10.1109/RFIC.2013.6569533</a>","chicago":"Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt. “245 GHz Subharmonic Receivers in SiGe.” In <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium</i>. Seattle, Washington, 2013. <a href=\"https://doi.org/10.1109/RFIC.2013.6569533\">https://doi.org/10.1109/RFIC.2013.6569533</a>.","ieee":"Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “245 GHz subharmonic receivers in SiGe,” 2013, doi: <a href=\"https://doi.org/10.1109/RFIC.2013.6569533\">10.1109/RFIC.2013.6569533</a>.","ama":"Mao Y, Schmalz K, Borngräber J, Scheytt C. 245 GHz subharmonic receivers in SiGe. In: <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/RFIC.2013.6569533\">10.1109/RFIC.2013.6569533</a>"},"year":"2013","place":"Seattle, Washington","author":[{"first_name":"Yanfei","full_name":"Mao, Yanfei","last_name":"Mao"},{"last_name":"Schmalz","full_name":"Schmalz, Klaus","first_name":"Klaus"},{"last_name":"Borngräber","full_name":"Borngräber, Johannes","first_name":"Johannes"},{"last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144","first_name":"Christoph"}],"date_created":"2021-09-14T09:22:41Z","date_updated":"2022-02-17T09:14:10Z","conference":{"start_date":"2013.06.02","end_date":"2013.06.04"},"doi":"10.1109/RFIC.2013.6569533","title":"245 GHz subharmonic receivers in SiGe"},{"date_updated":"2022-02-17T09:05:42Z","date_created":"2021-09-14T09:22:37Z","author":[{"last_name":"Elkhouly","full_name":"Elkhouly, Mohamed","first_name":"Mohamed"},{"full_name":"Mao, Yanfei","last_name":"Mao","first_name":"Yanfei"},{"first_name":"Chafik","full_name":"Meliani, Chafik","last_name":"Meliani"},{"full_name":"Ellinger, Frank","last_name":"Ellinger","first_name":"Frank"},{"first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144"}],"title":"A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology","doi":"10.1109/RFIC.2013.6569589","conference":{"end_date":"2013.06.04","start_date":"2013.06.02"},"publication_identifier":{"eisbn":["978-1-4673-6062-3"]},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6569589","relation":"confirmation"}]},"year":"2013","place":"Seattle, Washington","citation":{"apa":"Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013). A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. <a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">https://doi.org/10.1109/RFIC.2013.6569589</a>","bibtex":"@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Seattle, Washington}, title={A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology}, DOI={<a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>}, booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013} }","short":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013.","mla":"Elkhouly, Mohamed, et al. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.” <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i> 2013, doi:<a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>.","ama":"Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. In: <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>","ieee":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology,” 2013, doi: <a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>.","chicago":"Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.” In <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. Seattle, Washington, 2013. <a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">https://doi.org/10.1109/RFIC.2013.6569589</a>."},"_id":"24358","user_id":"15931","department":[{"_id":"58"}],"language":[{"iso":"eng"}],"type":"conference","publication":"2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,","abstract":[{"text":"A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with f T /f max of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V.","lang":"eng"}],"status":"public"},{"user_id":"15931","department":[{"_id":"58"}],"_id":"24362","language":[{"iso":"eng"}],"type":"conference","publication":"IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers","status":"public","abstract":[{"text":"A subharmonic receiver for 245 GHz spectroscopy sensor applications have been proposed. The receiver consists of a CB (common base) LNA, 2 nd transconductance SHM (subharmonic mixer) and a 120 GHz push-push VCO with 1/64 divider. The receiver is fabricated in f T /f max =300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 14.3 dB at 245 GHz with tuning range of 15 GHz, and the single-side band noise figure is 19 dB. The input 1-dB compression point is at -24 dBm. The receiver dissipates a power of 200 mW.","lang":"eng"}],"date_created":"2021-09-14T09:22:42Z","author":[{"first_name":"Yanfei","full_name":"Mao, Yanfei","last_name":"Mao"},{"first_name":"Klaus","full_name":"Schmalz, Klaus","last_name":"Schmalz"},{"first_name":"Johannes","last_name":"Borngräber","full_name":"Borngräber, Johannes"},{"full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt","first_name":"Christoph"},{"first_name":"Chafik","last_name":"Meliani","full_name":"Meliani, Chafik"}],"date_updated":"2022-02-17T09:23:50Z","conference":{"start_date":"2013.06.02","end_date":"2013.06.07"},"doi":"10.1109/MWSYM.2013.6697429","title":"245 GHz Subharmonic Receiver in SiGe","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6697429"}]},"publication_identifier":{"eisbn":["978-1-4673-6176-7"]},"citation":{"apa":"Mao, Y., Schmalz, K., Borngräber, J., Scheytt, C., &#38; Meliani, C. (2013). 245 GHz Subharmonic Receiver in SiGe. <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. <a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">https://doi.org/10.1109/MWSYM.2013.6697429</a>","mla":"Mao, Yanfei, et al. “245 GHz Subharmonic Receiver in SiGe.” <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>, 2013, doi:<a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>.","short":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, C. Meliani, in: IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers, Seattle, Washington, 2013.","bibtex":"@inproceedings{Mao_Schmalz_Borngräber_Scheytt_Meliani_2013, place={Seattle, Washington}, title={245 GHz Subharmonic Receiver in SiGe}, DOI={<a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>}, booktitle={IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph and Meliani, Chafik}, year={2013} }","chicago":"Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, Christoph Scheytt, and Chafik Meliani. “245 GHz Subharmonic Receiver in SiGe.” In <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. Seattle, Washington, 2013. <a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">https://doi.org/10.1109/MWSYM.2013.6697429</a>.","ieee":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, and C. Meliani, “245 GHz Subharmonic Receiver in SiGe,” 2013, doi: <a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>.","ama":"Mao Y, Schmalz K, Borngräber J, Scheytt C, Meliani C. 245 GHz Subharmonic Receiver in SiGe. In: <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>"},"year":"2013","place":"Seattle, Washington"},{"_id":"24360","user_id":"15931","department":[{"_id":"58"}],"language":[{"iso":"eng"}],"type":"conference","publication":"IEEE International Conference on Communications","status":"public","date_updated":"2022-02-17T09:12:09Z","author":[{"first_name":"Christoph","last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph"}],"date_created":"2021-09-14T09:22:40Z","title":"Wireless 100Gb/s Using A Powerand","related_material":{"link":[{"url":"https://www.wireless100gb.de/publication/ICC2013-Panel_P5_Christoph_Scheytt.pdf","relation":"confirmation"}]},"place":"Budapest","year":"2013","citation":{"apa":"Scheytt, C. (2013). Wireless 100Gb/s Using A Powerand. <i>IEEE International Conference on Communications</i>.","mla":"Scheytt, Christoph. “Wireless 100Gb/s Using A Powerand.” <i>IEEE International Conference on Communications</i>, 2013.","bibtex":"@inproceedings{Scheytt_2013, place={Budapest}, title={Wireless 100Gb/s Using A Powerand}, booktitle={IEEE International Conference on Communications}, author={Scheytt, Christoph}, year={2013} }","short":"C. Scheytt, in: IEEE International Conference on Communications, Budapest, 2013.","ieee":"C. Scheytt, “Wireless 100Gb/s Using A Powerand,” 2013.","chicago":"Scheytt, Christoph. “Wireless 100Gb/s Using A Powerand.” In <i>IEEE International Conference on Communications</i>. Budapest, 2013.","ama":"Scheytt C. Wireless 100Gb/s Using A Powerand. In: <i>IEEE International Conference on Communications</i>. ; 2013."}},{"title":"Hardware-Effizientes Mixed-Signal Entzerrfilter","author":[{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"}],"date_created":"2021-09-14T09:22:39Z","date_updated":"2022-02-17T09:09:43Z","citation":{"chicago":"Scheytt, Christoph. <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>, 2013.","ieee":"C. Scheytt, <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>. 2013.","ama":"Scheytt C. <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>.; 2013.","bibtex":"@book{Scheytt_2013, title={Hardware-Effizientes Mixed-Signal Entzerrfilter}, author={Scheytt, Christoph}, year={2013} }","mla":"Scheytt, Christoph. <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>. 2013.","short":"C. Scheytt, Hardware-Effizientes Mixed-Signal Entzerrfilter, 2013.","apa":"Scheytt, C. (2013). <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>."},"year":"2013","language":[{"iso":"eng"}],"department":[{"_id":"58"}],"user_id":"15931","_id":"24359","status":"public","type":"misc"},{"status":"public","publication":"W 06 (EuMC & EuMIC)","type":"conference","language":[{"iso":"eng"}],"department":[{"_id":"58"}],"user_id":"15931","_id":"24339","citation":{"apa":"Scheytt, C., Sun, Y., Schmalz, K., Mao, Y., Wang, R., Debski, W., &#38; Winkler, W. (2013). mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS. <i>W 06 (EuMC &#38; EuMIC)</i>.","mla":"Scheytt, Christoph, et al. “Mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS.” <i>W 06 (EuMC &#38; EuMIC)</i>, 2013.","bibtex":"@inproceedings{Scheytt_Sun_Schmalz_Mao_Wang_Debski_Winkler_2013, place={Nürnberg Convention Center}, title={mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS}, booktitle={W 06 (EuMC &#38; EuMIC)}, author={Scheytt, Christoph and Sun, Yaoming and Schmalz, Klaus and Mao, Yanfei and Wang, Ruoyu and Debski, Wojciech and Winkler, Wolfgang}, year={2013} }","short":"C. Scheytt, Y. Sun, K. Schmalz, Y. Mao, R. Wang, W. Debski, W. Winkler, in: W 06 (EuMC &#38; EuMIC), Nürnberg Convention Center, 2013.","ama":"Scheytt C, Sun Y, Schmalz K, et al. mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS. In: <i>W 06 (EuMC &#38; EuMIC)</i>. ; 2013.","chicago":"Scheytt, Christoph, Yaoming Sun, Klaus Schmalz, Yanfei Mao, Ruoyu Wang, Wojciech Debski, and Wolfgang Winkler. “Mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS.” In <i>W 06 (EuMC &#38; EuMIC)</i>. Nürnberg Convention Center, 2013.","ieee":"C. Scheytt <i>et al.</i>, “mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS,” 2013."},"year":"2013","place":"Nürnberg Convention Center","related_material":{"link":[{"relation":"confirmation","url":"https://www.eumweek.com/archive/eumweek2013/2013/default.html"}]},"title":"mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS","date_created":"2021-09-14T09:22:13Z","author":[{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"},{"first_name":"Yaoming","full_name":"Sun, Yaoming","last_name":"Sun"},{"last_name":"Schmalz","full_name":"Schmalz, Klaus","first_name":"Klaus"},{"full_name":"Mao, Yanfei","last_name":"Mao","first_name":"Yanfei"},{"first_name":"Ruoyu","last_name":"Wang","full_name":"Wang, Ruoyu"},{"last_name":"Debski","full_name":"Debski, Wojciech","first_name":"Wojciech"},{"full_name":"Winkler, Wolfgang","last_name":"Winkler","first_name":"Wolfgang"}],"date_updated":"2022-01-10T10:46:14Z"},{"language":[{"iso":"eng"}],"_id":"24344","department":[{"_id":"58"}],"user_id":"15931","abstract":[{"text":"In this paper, a novel 180°hybrid with different input frequencies is proposed to combine RF and local oscillator (LO) signals with different frequencies in a gate/base-pumped harmonic mixer. The detailed analysis and design procedures are presented in this paper. To further reduce the chip size, the multilayer metallization above the lossy silicon substrate is employed to implement the hybrid. A V-band down-converted 2× harmonic mixer in 90-nm CMOS process and a D-band down-converted 4× harmonic mixer in the 130-nm SiGe process are designed, fabricated, and measured to verify the concept. The 2× harmonic mixer possesses 0-dB conversion gain at 60 GHz with 0-dBm LO power with merely 2.4-mW dc power. The 4× harmonic mixer achieves 0.5-dB conversion gain at 120 GHz with 2-dBm LO power and 27.3-mW dc power. With the proposed reduced-size 180° hybrid, gate/base-pumped harmonic mixers are very attractive in transceivers demanding low LO frequency and power.","lang":"eng"}],"status":"public","publication":"Microwave Theory and Techniques, IEEE Transactions on","type":"journal_article","title":"Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies ","doi":"10.1109/TMTT.2012.2202039","date_updated":"2022-01-11T10:44:00Z","volume":60,"date_created":"2021-09-14T09:22:19Z","author":[{"first_name":"Jhe-Jia","last_name":"Kuo","full_name":"Kuo, Jhe-Jia"},{"first_name":"Chun-Hsien","full_name":"Lien, Chun-Hsien","last_name":"Lien"},{"full_name":"Tsai, Zuo-Min","last_name":"Tsai","first_name":"Zuo-Min"},{"first_name":"Kun-You","full_name":"Lin, Kun-You","last_name":"Lin"},{"first_name":"Klaus","full_name":"Schmalz, Klaus","last_name":"Schmalz"},{"id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph"},{"full_name":"Wang, Huei","last_name":"Wang","first_name":"Huei"}],"year":"2013","intvolume":"        60","page":"2473-2485","citation":{"short":"J.-J. Kuo, C.-H. Lien, Z.-M. Tsai, K.-Y. Lin, K. Schmalz, C. Scheytt, H. Wang, Microwave Theory and Techniques, IEEE Transactions On 60 (2013) 2473–2485.","mla":"Kuo, Jhe-Jia, et al. “Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies .” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 60, no. 8, 2013, pp. 2473–85, doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">10.1109/TMTT.2012.2202039</a>.","bibtex":"@article{Kuo_Lien_Tsai_Lin_Schmalz_Scheytt_Wang_2013, title={Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies }, volume={60}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">10.1109/TMTT.2012.2202039</a>}, number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Kuo, Jhe-Jia and Lien, Chun-Hsien and Tsai, Zuo-Min and Lin, Kun-You and Schmalz, Klaus and Scheytt, Christoph and Wang, Huei}, year={2013}, pages={2473–2485} }","apa":"Kuo, J.-J., Lien, C.-H., Tsai, Z.-M., Lin, K.-Y., Schmalz, K., Scheytt, C., &#38; Wang, H. (2013). Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies . <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>60</i>(8), 2473–2485. <a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">https://doi.org/10.1109/TMTT.2012.2202039</a>","ama":"Kuo J-J, Lien C-H, Tsai Z-M, et al. Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies . <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2013;60(8):2473-2485. doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">10.1109/TMTT.2012.2202039</a>","chicago":"Kuo, Jhe-Jia, Chun-Hsien Lien, Zuo-Min Tsai, Kun-You Lin, Klaus Schmalz, Christoph Scheytt, and Huei Wang. “Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies .” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 60, no. 8 (2013): 2473–85. <a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">https://doi.org/10.1109/TMTT.2012.2202039</a>.","ieee":"J.-J. Kuo <i>et al.</i>, “Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\\circ Hybrid With Different Input Frequencies ,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 60, no. 8, pp. 2473–2485, 2013, doi: <a href=\"https://doi.org/10.1109/TMTT.2012.2202039\">10.1109/TMTT.2012.2202039</a>."},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6214582","relation":"confirmation"}]},"issue":"8"},{"abstract":[{"text":"50 Jahre Moore‘s Gesetz ? „More Moore“ & „More than Moore“ ? Miniatur-Radar-System ? Silizium-Photonik für schnelle Kommunikation ? Photonischer Winkelsensor","lang":"ger"}],"status":"public","publication":"HNI-Forum September ","type":"conference","language":[{"iso":"eng"}],"_id":"24343","department":[{"_id":"58"}],"user_id":"15931","place":"HNI, Fürstenallee 11, 33102 Paderborn","year":"2013","citation":{"chicago":"Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.” In <i>HNI-Forum September </i>. HNI, Fürstenallee 11, 33102 Paderborn, 2013.","ieee":"C. Scheytt, “Nano-/Mikroelektronik als Enabler für neue Ansätze,” 2013.","ama":"Scheytt C. Nano-/Mikroelektronik als Enabler für neue Ansätze. In: <i>HNI-Forum September </i>. ; 2013.","mla":"Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.” <i>HNI-Forum September </i>, 2013.","bibtex":"@inproceedings{Scheytt_2013, place={HNI, Fürstenallee 11, 33102 Paderborn}, title={Nano-/Mikroelektronik als Enabler für neue Ansätze}, booktitle={HNI-Forum September }, author={Scheytt, Christoph}, year={2013} }","short":"C. Scheytt, in: HNI-Forum September , HNI, Fürstenallee 11, 33102 Paderborn, 2013.","apa":"Scheytt, C. (2013). Nano-/Mikroelektronik als Enabler für neue Ansätze. <i>HNI-Forum September </i>."},"title":"Nano-/Mikroelektronik als Enabler für neue Ansätze","date_updated":"2022-01-11T10:42:53Z","author":[{"first_name":"Christoph","id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt"}],"date_created":"2021-09-14T09:22:18Z"},{"status":"public","type":"conference","publication":"RF-MST Cluster Workshop on MEMSWAVE 2013","language":[{"iso":"eng"}],"user_id":"15931","department":[{"_id":"58"}],"_id":"24345","citation":{"ieee":"C. Scheytt, “RF-MST Cluster Workshop on MEMSWAVE 2013,” 2013.","chicago":"Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” In <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>, 2013.","ama":"Scheytt C. RF-MST Cluster Workshop on MEMSWAVE 2013. In: <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>. ; 2013.","apa":"Scheytt, C. (2013). RF-MST Cluster Workshop on MEMSWAVE 2013. <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>.","bibtex":"@inproceedings{Scheytt_2013, title={RF-MST Cluster Workshop on MEMSWAVE 2013}, booktitle={RF-MST Cluster Workshop on MEMSWAVE 2013}, author={Scheytt, Christoph}, year={2013} }","short":"C. Scheytt, in: RF-MST Cluster Workshop on MEMSWAVE 2013, 2013.","mla":"Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>, 2013."},"year":"2013","related_material":{"link":[{"url":"https://www.enas.fraunhofer.de/content/dam/enas/Dokumente/Deutsch/News_Events/Konferenzen/MEMSWAVE_2013_first.pdf","relation":"confirmation"}]},"title":"RF-MST Cluster Workshop on MEMSWAVE 2013","date_created":"2021-09-14T09:22:21Z","author":[{"last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144","first_name":"Christoph"}],"date_updated":"2022-01-11T10:52:51Z"},{"related_material":{"link":[{"url":"https://www.eumweek.com/archive/eumweek2013/2013/docs/2013_conf_programme.pdf","relation":"confirmation"}]},"citation":{"ama":"Scheytt C, Kraemer R, Kallfass I. Strategies for Energy-Efficient 100 Gb/s Baseband. In: <i>W 19 (EuMC \\&#38; EuMIC)</i>. ; 2013.","chicago":"Scheytt, Christoph, Rolf Kraemer, and Ingmar Kallfass. “Strategies for Energy-Efficient 100 Gb/s Baseband.” In <i>W 19 (EuMC \\&#38; EuMIC)</i>. Nürnberg Convention Center, 2013.","ieee":"C. Scheytt, R. Kraemer, and I. Kallfass, “Strategies for Energy-Efficient 100 Gb/s Baseband,” 2013.","bibtex":"@inproceedings{Scheytt_Kraemer_Kallfass_2013, place={Nürnberg Convention Center}, title={Strategies for Energy-Efficient 100 Gb/s Baseband}, booktitle={W 19 (EuMC \\&#38; EuMIC)}, author={Scheytt, Christoph and Kraemer, Rolf and Kallfass, Ingmar}, year={2013} }","mla":"Scheytt, Christoph, et al. “Strategies for Energy-Efficient 100 Gb/s Baseband.” <i>W 19 (EuMC \\&#38; EuMIC)</i>, 2013.","short":"C. Scheytt, R. Kraemer, I. Kallfass, in: W 19 (EuMC \\&#38; EuMIC), Nürnberg Convention Center, 2013.","apa":"Scheytt, C., Kraemer, R., &#38; Kallfass, I. (2013). Strategies for Energy-Efficient 100 Gb/s Baseband. <i>W 19 (EuMC \\&#38; EuMIC)</i>."},"year":"2013","place":"Nürnberg Convention Center","date_created":"2021-09-14T09:22:14Z","author":[{"first_name":"Christoph","id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt"},{"first_name":"Rolf","full_name":"Kraemer, Rolf","last_name":"Kraemer"},{"full_name":"Kallfass, Ingmar","last_name":"Kallfass","first_name":"Ingmar"}],"date_updated":"2022-01-10T11:36:56Z","title":"Strategies for Energy-Efficient 100 Gb/s Baseband","type":"conference","publication":"W 19 (EuMC \\& EuMIC)","status":"public","user_id":"15931","department":[{"_id":"58"}],"_id":"24340","language":[{"iso":"eng"}]},{"title":"A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ","doi":"10.1109/BCTM.2013.6798158","date_updated":"2022-01-11T09:20:48Z","author":[{"full_name":"Elkhouly, Mohamed","last_name":"Elkhouly","first_name":"Mohamed"},{"first_name":"Yanfei","last_name":"Mao","full_name":"Mao, Yanfei"},{"first_name":"Chafik","full_name":"Meliani, Chafik","last_name":"Meliani"},{"first_name":"Frank","full_name":"Ellinger, Frank","last_name":"Ellinger"},{"last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph"}],"date_created":"2021-09-14T09:22:15Z","year":"2013","place":"Bordeaux, France,","citation":{"ieee":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ,” 2013, doi: <a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>.","chicago":"Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” In <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. Bordeaux, France, 2013. <a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">https://doi.org/10.1109/BCTM.2013.6798158</a>.","ama":"Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . In: <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>","bibtex":"@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Bordeaux, France,}, title={A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology }, DOI={<a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>}, booktitle={IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013} }","short":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING, Bordeaux, France, 2013.","mla":"Elkhouly, Mohamed, et al. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i> 2013, doi:<a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>.","apa":"Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013). A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. <a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">https://doi.org/10.1109/BCTM.2013.6798158</a>"},"related_material":{"link":[{"url":"https://ris.uni-paderborn.de/record/24341","relation":"confirmation"}]},"language":[{"iso":"eng"}],"_id":"24341","department":[{"_id":"58"}],"user_id":"15931","abstract":[{"text":"This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm 2 .","lang":"eng"}],"status":"public","publication":"IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,","type":"conference"},{"_id":"24342","department":[{"_id":"58"}],"user_id":"15931","language":[{"iso":"eng"}],"publication":"24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications","type":"conference","abstract":[{"text":"Two half-wavelength 122 GHz patch antennas were designed and manufactured by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer. It enables the full integration of the millimeter-wave transceiver circuits and the antennas on a single chip to simplify the packaging procedure at millimeter-wave frequencies, thereby reducing the cost. The two patch antennas are fed by different feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled feed. They exhibit similar performance and offer the flexibility of designing the interconnects (feed lines routing) between the circuits and the antennas within the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency of about 50%.","lang":"eng"}],"status":"public","date_updated":"2022-01-11T10:29:40Z","author":[{"first_name":"Ruoyu","full_name":"Wang, Ruoyu","last_name":"Wang"},{"first_name":"Mehmet","full_name":"Kaynak, Mehmet","last_name":"Kaynak"},{"full_name":"Sun, Yaoming","last_name":"Sun","first_name":"Yaoming"},{"full_name":"Borngräber, Johannes","last_name":"Borngräber","first_name":"Johannes"},{"full_name":"Beer, Stefan","last_name":"Beer","first_name":"Stefan"},{"full_name":"Goettel, B.","last_name":"Goettel","first_name":"B."},{"last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph"}],"date_created":"2021-09-14T09:22:17Z","title":"122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications","doi":"10.1109/PIMRC.2013.6666358","conference":{"end_date":"11.09.2013","start_date":"08.09.2013"},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6666358","relation":"confirmation"}]},"year":"2013","place":"Hilton, London Metropole","citation":{"chicago":"Wang, Ruoyu, Mehmet Kaynak, Yaoming Sun, Johannes Borngräber, Stefan Beer, B. Goettel, and Christoph Scheytt. “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” In <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>. Hilton, London Metropole, 2013. <a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">https://doi.org/10.1109/PIMRC.2013.6666358</a>.","ieee":"R. Wang <i>et al.</i>, “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications,” 2013, doi: <a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>.","ama":"Wang R, Kaynak M, Sun Y, et al. 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications. In: <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>","mla":"Wang, Ruoyu, et al. “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>, 2013, doi:<a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>.","bibtex":"@inproceedings{Wang_Kaynak_Sun_Borngräber_Beer_Goettel_Scheytt_2013, place={Hilton, London Metropole}, title={122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications}, DOI={<a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>}, booktitle={24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications}, author={Wang, Ruoyu and Kaynak, Mehmet and Sun, Yaoming and Borngräber, Johannes and Beer, Stefan and Goettel, B. and Scheytt, Christoph}, year={2013} }","short":"R. Wang, M. Kaynak, Y. Sun, J. Borngräber, S. Beer, B. Goettel, C. Scheytt, in: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, Hilton, London Metropole, 2013.","apa":"Wang, R., Kaynak, M., Sun, Y., Borngräber, J., Beer, S., Goettel, B., &#38; Scheytt, C. (2013). 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications. <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>. <a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">https://doi.org/10.1109/PIMRC.2013.6666358</a>"}},{"language":[{"iso":"eng"}],"_id":"24347","department":[{"_id":"58"}],"user_id":"15931","abstract":[{"text":"In this paper, an integrated dielectric sensor with a read-out circuit in an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists of a 500-μm shorted half-wave coplanar-waveguide transmission line in the uppermost metal layer of the silicon process, while the read-out is obtained by reflection coefficient measurement with an integrated reflectometer and a signal source. The reflectometer is verified with a circuit breakout including an integrated dummy sensor. The reflectometer is able to measure the phase of the reflection coefficient from 117 to 134 GHz with a resolution of 0.1° and a standard deviation of 0.082°. The integrated sensor with the reflectometer circuit have been fabricated in a 190-GHz fT SiGe:C BiCMOS technology. It spans an area of 1.4 mm 2 and consumes 75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit board for characterization by immersion into test liquids. The sensor is controlled by a controller board and a personal computer enabling a measurement time of up to 1 ms per frequency point. Functionality of the sensor is demonstrated from 118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol mixtures, showing good correlation between theory and measurement. The sensor shows a standard deviation of the measured phase of 0.220° and is able to detect a difference in ε' r of 0.0125","lang":"eng"}],"status":"public","publication":"Microwave Theory and Techniques, IEEE Transactions on","type":"journal_article","title":"A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology","doi":"10.1109/TMTT.2013.2253792","date_updated":"2022-01-18T10:15:31Z","volume":61,"date_created":"2021-09-14T09:22:23Z","author":[{"first_name":"Benjamin","last_name":"Laemmle","full_name":"Laemmle, Benjamin"},{"full_name":"Schmalz, Klaus","last_name":"Schmalz","first_name":"Klaus"},{"full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt","first_name":"Christoph"},{"first_name":"Robert","last_name":"Weigel","full_name":"Weigel, Robert"},{"first_name":"Dietmar","last_name":"Kissinger","full_name":"Kissinger, Dietmar"}],"year":"2013","page":"2185-2194","intvolume":"        61","citation":{"short":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, D. Kissinger, Microwave Theory and Techniques, IEEE Transactions On 61 (2013) 2185–2194.","bibtex":"@article{Laemmle_Schmalz_Scheytt_Weigel_Kissinger_2013, title={A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology}, volume={61}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>}, number={5}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger, Dietmar}, year={2013}, pages={2185–2194} }","mla":"Laemmle, Benjamin, et al. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 61, no. 5, 2013, pp. 2185–94, doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>.","apa":"Laemmle, B., Schmalz, K., Scheytt, C., Weigel, R., &#38; Kissinger, D. (2013). A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>61</i>(5), 2185–2194. <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">https://doi.org/10.1109/TMTT.2013.2253792</a>","ieee":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, and D. Kissinger, “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 61, no. 5, pp. 2185–2194, 2013, doi: <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>.","chicago":"Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Robert Weigel, and Dietmar Kissinger. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 61, no. 5 (2013): 2185–94. <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">https://doi.org/10.1109/TMTT.2013.2253792</a>.","ama":"Laemmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D. A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2013;61(5):2185-2194. doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>"},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6492143","relation":"confirmation"}]},"issue":"5"},{"citation":{"mla":"Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte, Hochintegrierte Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>, 2013.","short":"C. Scheytt, G. Grau, in: Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut, Heinz Nixdorf MuseumsForum Paderborn, Germany, 2013.","bibtex":"@inproceedings{Scheytt_Grau_2013, place={Heinz Nixdorf MuseumsForum Paderborn, Germany}, title={Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren}, booktitle={Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut}, author={Scheytt, Christoph and Grau, Günter}, year={2013} }","apa":"Scheytt, C., &#38; Grau, G. (2013). Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren. <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>.","ieee":"C. Scheytt and G. Grau, “Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren,” 2013.","chicago":"Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte, Hochintegrierte Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” In <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>. Heinz Nixdorf MuseumsForum Paderborn, Germany, 2013.","ama":"Scheytt C, Grau G. Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren. In: <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>. ; 2013."},"year":"2013","place":"Heinz Nixdorf MuseumsForum Paderborn, Germany","related_material":{"link":[{"relation":"confirmation","url":"https://docplayer.org/42941783-Wissenschaftsforum-programm-und-einladung-wissenschaftsforum-intelligente-technische-systeme.htm"}]},"title":"Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren","author":[{"id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph"},{"last_name":"Grau","full_name":"Grau, Günter","first_name":"Günter"}],"date_created":"2021-09-14T09:22:24Z","date_updated":"2022-01-18T10:17:43Z","status":"public","type":"conference","publication":"Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut","language":[{"iso":"eng"}],"user_id":"15931","department":[{"_id":"58"}],"_id":"24348"}]