[{"language":[{"iso":"eng"}],"_id":"24346","user_id":"15931","department":[{"_id":"58"}],"status":"public","type":"conference","publication":"System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave Radar Sensors","title":"Introduction to Integrated mm‐Wave Sensors","date_updated":"2022-01-18T10:14:15Z","author":[{"id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph"}],"date_created":"2021-09-14T09:22:22Z","year":"2013","place":"Karlsruhe, Germany","citation":{"chicago":"Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” In <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>. Karlsruhe, Germany, 2013.","ieee":"C. Scheytt, “Introduction to Integrated mm‐Wave Sensors,” 2013.","ama":"Scheytt C. Introduction to Integrated mm‐Wave Sensors. In: <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>. ; 2013.","short":"C. Scheytt, in: System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors, Karlsruhe, Germany, 2013.","bibtex":"@inproceedings{Scheytt_2013, place={Karlsruhe, Germany}, title={Introduction to Integrated mm‐Wave Sensors}, booktitle={System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave Radar Sensors}, author={Scheytt, Christoph}, year={2013} }","mla":"Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>, 2013.","apa":"Scheytt, C. (2013). Introduction to Integrated mm‐Wave Sensors. <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>."}},{"issue":"99","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6507360"}]},"year":"2013","citation":{"apa":"Elkhouly, M., Glisic, S., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013). 220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>PP</i>(99), 1–13. <a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">https://doi.org/10.1109/TMTT.2013.2258032</a>","mla":"Elkhouly, Mohamed, et al. “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. PP, no. 99, 2013, pp. 1–13, doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>.","short":"M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On PP (2013) 1–13.","bibtex":"@article{Elkhouly_Glisic_Meliani_Ellinger_Scheytt_2013, title={220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology}, volume={PP}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>}, number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Elkhouly, Mohamed and Glisic, Srdjan and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013}, pages={1–13} }","ieee":"M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, and C. Scheytt, “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. PP, no. 99, pp. 1–13, 2013, doi: <a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>.","chicago":"Elkhouly, Mohamed, Srdjan Glisic, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> PP, no. 99 (2013): 1–13. <a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">https://doi.org/10.1109/TMTT.2013.2258032</a>.","ama":"Elkhouly M, Glisic S, Meliani C, Ellinger F, Scheytt C. 220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2013;PP(99):1-13. doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>"},"page":"1-13","date_updated":"2022-01-18T10:25:50Z","date_created":"2021-09-14T09:22:27Z","author":[{"first_name":"Mohamed","full_name":"Elkhouly, Mohamed","last_name":"Elkhouly"},{"first_name":"Srdjan","full_name":"Glisic, Srdjan","last_name":"Glisic"},{"first_name":"Chafik","last_name":"Meliani","full_name":"Meliani, Chafik"},{"first_name":"Frank","full_name":"Ellinger, Frank","last_name":"Ellinger"},{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"}],"volume":"PP","title":"220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology","doi":"10.1109/TMTT.2013.2258032","type":"journal_article","publication":"Microwave Theory and Techniques, IEEE Transactions on","abstract":[{"lang":"eng","text":"This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication."}],"status":"public","_id":"24350","user_id":"15931","department":[{"_id":"58"}],"language":[{"iso":"eng"}]},{"abstract":[{"text":"This paper analyses substrate-related spurious tones in fractional-N phase-\r\nlocked loops with integrated VCOs. Spur positions are calculated and experimentally\r\nverified as a function of the divider ratios of prescaler and programmable divider.\r\nFor an integrated wideband PLL in SiGe BiCMOS technology the spur power levels\r\nare measured and compared with theoretical expectations. The power in these spurs is\r\nminimized by layout techniques shielding the reference input buffer. Spur minimization\r\nby using a variable reference frequency is experimentally demonstrated. Based on this\r\nobservation, a programmable integer-N PLL for driving the fractional-N synthesizer is\r\nsuggested to reduce the worst-case spur level significantly.\r\nIndex Terms — Fractional-N, frequency synthesizers, fractional spurs, substrate\r\nspurs, phase-locked loops (PLLs), phase noise.\r\n","lang":"eng"}],"status":"public","type":"journal_article","publication":"Analog Integrated Circuits and Signal Processing","language":[{"iso":"eng"}],"_id":"24352","user_id":"15931","department":[{"_id":"58"}],"year":"2013","citation":{"ama":"Osmany SA, Herzel F, Scheytt C. Analysis and minimization of substrate spurs in fractional-N frequency synthesizers. <i>Analog Integrated Circuits and Signal Processing</i>. 2013;74(3):545-556. doi:<a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>","chicago":"Osmany, Sabbir Ahmed, Frank Herzel, and Christoph Scheytt. “Analysis and Minimization of Substrate Spurs in Fractional-N Frequency Synthesizers.” <i>Analog Integrated Circuits and Signal Processing</i> 74, no. 3 (2013): 545–56. <a href=\"https://doi.org/10.1007/s10470-012-0002-x\">https://doi.org/10.1007/s10470-012-0002-x</a>.","ieee":"S. A. Osmany, F. Herzel, and C. Scheytt, “Analysis and minimization of substrate spurs in fractional-N frequency synthesizers,” <i>Analog Integrated Circuits and Signal Processing</i>, vol. 74, no. 3, pp. 545–556, 2013, doi: <a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>.","apa":"Osmany, S. A., Herzel, F., &#38; Scheytt, C. (2013). Analysis and minimization of substrate spurs in fractional-N frequency synthesizers. <i>Analog Integrated Circuits and Signal Processing</i>, <i>74</i>(3), 545–556. <a href=\"https://doi.org/10.1007/s10470-012-0002-x\">https://doi.org/10.1007/s10470-012-0002-x</a>","mla":"Osmany, Sabbir Ahmed, et al. “Analysis and Minimization of Substrate Spurs in Fractional-N Frequency Synthesizers.” <i>Analog Integrated Circuits and Signal Processing</i>, vol. 74, no. 3, 2013, pp. 545–56, doi:<a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>.","short":"S.A. Osmany, F. Herzel, C. Scheytt, Analog Integrated Circuits and Signal Processing 74 (2013) 545–556.","bibtex":"@article{Osmany_Herzel_Scheytt_2013, title={Analysis and minimization of substrate spurs in fractional-N frequency synthesizers}, volume={74}, DOI={<a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>}, number={3}, journal={Analog Integrated Circuits and Signal Processing}, author={Osmany, Sabbir Ahmed and Herzel, Frank and Scheytt, Christoph}, year={2013}, pages={545–556} }"},"intvolume":"        74","page":"545-556","issue":"3","related_material":{"link":[{"url":"https://www.researchgate.net/publication/233895658_Analysis_and_minimization_of_substrate_spurs_in_fractional-N_frequency_synthesizers","relation":"confirmation"}]},"title":"Analysis and minimization of substrate spurs in fractional-N frequency synthesizers","doi":"10.1007/s10470-012-0002-x","date_updated":"2022-01-18T10:29:31Z","date_created":"2021-09-14T09:22:30Z","author":[{"full_name":"Osmany, Sabbir Ahmed","last_name":"Osmany","first_name":"Sabbir Ahmed"},{"last_name":"Herzel","full_name":"Herzel, Frank","first_name":"Frank"},{"full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt","first_name":"Christoph"}],"volume":74},{"publication_identifier":{"eisbn":["978-88-907018-3-2"]},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6546229"}]},"place":"Gothenburg, Sweden","year":"2013","citation":{"chicago":"Beer, Stefan, Mekdes Gebresilassie Girma, Yaoming Sun, Wolfgang Winkler, Wojciech Debski, Jaska Paaso, Gerhard Kunkel, Christoph Scheytt, Jürgen Hasch, and Thomas Zwick. “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC.” In <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>. Gothenburg, Sweden, 2013.","ieee":"S. Beer <i>et al.</i>, “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC,” 2013.","ama":"Beer S, Girma MG, Sun Y, et al. Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. In: <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>. ; 2013.","bibtex":"@inproceedings{Beer_Girma_Sun_Winkler_Debski_Paaso_Kunkel_Scheytt_Hasch_Zwick_2013, place={Gothenburg, Sweden}, title={Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC}, booktitle={7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION}, author={Beer, Stefan and Girma, Mekdes Gebresilassie and Sun, Yaoming and Winkler, Wolfgang and Debski, Wojciech and Paaso, Jaska and Kunkel, Gerhard and Scheytt, Christoph and Hasch, Jürgen and Zwick, Thomas}, year={2013} }","short":"S. Beer, M.G. Girma, Y. Sun, W. Winkler, W. Debski, J. Paaso, G. Kunkel, C. Scheytt, J. Hasch, T. Zwick, in: 7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION, Gothenburg, Sweden, 2013.","mla":"Beer, Stefan, et al. “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC.” <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>, 2013.","apa":"Beer, S., Girma, M. G., Sun, Y., Winkler, W., Debski, W., Paaso, J., Kunkel, G., Scheytt, C., Hasch, J., &#38; Zwick, T. (2013). Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>."},"date_updated":"2022-01-18T10:23:24Z","date_created":"2021-09-14T09:22:26Z","author":[{"first_name":"Stefan","last_name":"Beer","full_name":"Beer, Stefan"},{"full_name":"Girma, Mekdes Gebresilassie","last_name":"Girma","first_name":"Mekdes Gebresilassie"},{"full_name":"Sun, Yaoming","last_name":"Sun","first_name":"Yaoming"},{"full_name":"Winkler, Wolfgang","last_name":"Winkler","first_name":"Wolfgang"},{"last_name":"Debski","full_name":"Debski, Wojciech","first_name":"Wojciech"},{"first_name":"Jaska","full_name":"Paaso, Jaska","last_name":"Paaso"},{"last_name":"Kunkel","full_name":"Kunkel, Gerhard","first_name":"Gerhard"},{"first_name":"Christoph","id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt"},{"first_name":"Jürgen","last_name":"Hasch","full_name":"Hasch, Jürgen"},{"first_name":"Thomas","full_name":"Zwick, Thomas","last_name":"Zwick"}],"title":"Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC","publication":"7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION","type":"conference","abstract":[{"text":"This paper presents the packaging technology and the integrated antenna design for a miniaturized 122-GHz radar sensor. The package layout and the assembly process are shortly explained. Measurements of the antenna including the flip chip interconnect are presented that have been achieved by replacing the IC with a dummy chip that only contains a through-line. Afterwards, radiation pattern measurements are shown that were recorded using the radar sensor as transmitter. Finally, details of the fully integrated radar sensor are given, together with results of the first Doppler measurements.","lang":"eng"}],"status":"public","_id":"24349","department":[{"_id":"58"}],"user_id":"15931","language":[{"iso":"eng"}]},{"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6533180"}]},"year":"2013","place":"Anaheim, California United States","citation":{"mla":"Möller, Lothar, et al. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” <i>Optical Fiber Communication Conference</i>, 2013, doi:<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>.","bibtex":"@inproceedings{Möller_Awny_Junio_Scheytt_Thiede_2013, place={Anaheim, California United States}, title={80 Gb/s Decision Feedback Equalizer for Intersymbol Interference}, DOI={<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>}, booktitle={Optical Fiber Communication Conference}, author={Möller, Lothar and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas}, year={2013} }","short":"L. Möller, A. Awny, J. Junio, C. Scheytt, A. Thiede, in: Optical Fiber Communication Conference, Anaheim, California United States, 2013.","apa":"Möller, L., Awny, A., Junio, J., Scheytt, C., &#38; Thiede, A. (2013). 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference. <i>Optical Fiber Communication Conference</i>. <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">https://doi.org/10.1364/OFC.2013.OW4B.2 </a>","ieee":"L. Möller, A. Awny, J. Junio, C. Scheytt, and A. Thiede, “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference,” 2013, doi: <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>.","chicago":"Möller, Lothar, Ahmed Awny, Josef Junio, Christoph Scheytt, and Andreas Thiede. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” In <i>Optical Fiber Communication Conference</i>. Anaheim, California United States, 2013. <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">https://doi.org/10.1364/OFC.2013.OW4B.2 </a>.","ama":"Möller L, Awny A, Junio J, Scheytt C, Thiede A. 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference. In: <i>Optical Fiber Communication Conference</i>. ; 2013. doi:<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>"},"date_updated":"2023-01-25T11:03:26Z","author":[{"full_name":"Möller, Lothar","last_name":"Möller","first_name":"Lothar"},{"full_name":"Awny, Ahmed","last_name":"Awny","first_name":"Ahmed"},{"first_name":"Josef","full_name":"Junio, Josef","last_name":"Junio"},{"id":"37144","full_name":"Scheytt, Christoph","orcid":"https://orcid.org/0000-0002-5950-6618","last_name":"Scheytt","first_name":"Christoph"},{"first_name":"Andreas","id":"538","full_name":"Thiede, Andreas","last_name":"Thiede"}],"date_created":"2021-09-14T09:22:28Z","title":"80 Gb/s Decision Feedback Equalizer for Intersymbol Interference","doi":"10.1364/OFC.2013.OW4B.2 ","publication":"Optical Fiber Communication Conference","type":"conference","abstract":[{"lang":"eng","text":"We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology, enables error-free data recovery of heavily distorted signals transmitted at a bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer reported yet utilizes a novel 1-tap look-ahead architecture."}],"status":"public","_id":"24351","department":[{"_id":"58"},{"_id":"51"}],"user_id":"158","language":[{"iso":"eng"}]},{"publication_identifier":{"eisbn":["978-2-87487-028-6"]},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6483766","relation":"confirmation"}]},"year":"2012","place":"Amsterdam, Netherland","citation":{"apa":"Mao, Y., Scheytt, C., Schmalz, K., &#38; Borngräber, J. (2012). 245 GHz subharmonic receiver in SiGe. <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 183–186.","short":"Y. Mao, C. Scheytt, K. Schmalz, J. Borngräber, in: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, Amsterdam, Netherland, 2012, pp. 183–186.","bibtex":"@inproceedings{Mao_Scheytt_Schmalz_Borngräber_2012, place={Amsterdam, Netherland}, title={245 GHz subharmonic receiver in SiGe}, booktitle={Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}, author={Mao, Yanfei and Scheytt, Christoph and Schmalz, Klaus and Borngräber, Johannes}, year={2012}, pages={183–186} }","mla":"Mao, Yanfei, et al. “245 GHz Subharmonic Receiver in SiGe.” <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 183–86.","ama":"Mao Y, Scheytt C, Schmalz K, Borngräber J. 245 GHz subharmonic receiver in SiGe. In: <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>. ; 2012:183-186.","ieee":"Y. Mao, C. Scheytt, K. Schmalz, and J. Borngräber, “245 GHz subharmonic receiver in SiGe,” in <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 183–186.","chicago":"Mao, Yanfei, Christoph Scheytt, Klaus Schmalz, and Johannes Borngräber. “245 GHz Subharmonic Receiver in SiGe.” In <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 183–86. Amsterdam, Netherland, 2012."},"page":"183-186","date_updated":"2022-01-06T06:56:20Z","author":[{"last_name":"Mao","full_name":"Mao, Yanfei","first_name":"Yanfei"},{"full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt","first_name":"Christoph"},{"first_name":"Klaus","last_name":"Schmalz","full_name":"Schmalz, Klaus"},{"first_name":"Johannes","full_name":"Borngräber, Johannes","last_name":"Borngräber"}],"date_created":"2021-09-14T12:54:38Z","title":"245 GHz subharmonic receiver in SiGe","conference":{"end_date":"30.10.2012","start_date":"29.10.2012"},"type":"conference","publication":"Microwave Integrated Circuits Conference (EuMIC), 2012 7th European","abstract":[{"lang":"eng","text":"A  subharmonic  receiver  for  sensing  applications  in  \r\nthe 245 GHz ISM band has been proposed. The receiver consists \r\nof a  single-ended common base LNA, a  60  GHz push-push  VCO \r\nwith 1/32 divider, a transconductance 4th subharmonic mixer and \r\nIF  amplifier.  The  receiver  is  fabricated  in  fT/fmax=300/500  GHz  \r\nSiGe:  C  BiCMOS  technology.  Its  measured  single-ended  gain  is  \r\n21  dB  at  243  GHz  with  tuning  range  of  12  GHz,  and  the  single-\r\nside  band  noise  figure  is  32  dB.  The  input  1-dB  compression  \r\npoint is at -37 dBm. The receiver dissipates a power of 358 mW."}],"status":"public","_id":"24401","user_id":"15931","department":[{"_id":"58"}],"language":[{"iso":"eng"}]},{"language":[{"iso":"eng"}],"_id":"24402","user_id":"15931","department":[{"_id":"58"}],"abstract":[{"text":"The  design  of  a  complex  integrated  transceiver  for  \r\n121–124 GHz is presented. The transceiver consists of the \r\ntransmitter with VCO, power amplifier and power detectors, the \r\nreceiver  with  LNA,  two  mixers  for  quadrature  receive  path  and  \r\nvariable  gain  amplifiers  for  IF-output  and  the  digital  control  \r\ncircuits with SPI-interface. A central part is the  VCO with DAC \r\nand  memory  for  on-chip  storage  of  programmable  frequency  \r\nramps  for  FMCW  radar  applications.  The  oscillator  phase  noise  \r\nis -92 dBc/Hz at 1MHz offset. For calibration of the radar-system \r\non  chip,  a  frequency  measurement  unit  is  integrated.  The  radar  \r\nchip has  power consumption of 380 mW and occupies an area  of \r\n1.8 mm x 1.5 mm. Several examples of frequency ramp \r\ngeneration  are  presented.  The  chip  is  intended  for  integration  \r\ntogether with antenna in a single package.","lang":"eng"}],"status":"public","type":"conference","publication":"Microwave Integrated Circuits Conference (EuMIC), 2012 7th European","title":"120 GHz Radar Mixed-Signal Transceiver","conference":{"end_date":"30.10.2012","start_date":"29.10.2012"},"date_updated":"2022-01-06T06:56:20Z","date_created":"2021-09-14T12:54:39Z","author":[{"first_name":"Wojciech","full_name":"Debski, Wojciech","last_name":"Debski"},{"full_name":"Winkler, Wolfgang","last_name":"Winkler","first_name":"Wolfgang"},{"last_name":"Sun","full_name":"Sun, Yaoming","first_name":"Yaoming"},{"last_name":"Marinkovic","full_name":"Marinkovic, Miroslav","first_name":"Miroslav"},{"last_name":"Borngräber","full_name":"Borngräber, Johannes","first_name":"Johannes"},{"full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt","first_name":"Christoph"}],"year":"2012","citation":{"mla":"Debski, Wojciech, et al. “120 GHz Radar Mixed-Signal Transceiver.” <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 191–94.","bibtex":"@inproceedings{Debski_Winkler_Sun_Marinkovic_Borngräber_Scheytt_2012, title={120 GHz Radar Mixed-Signal Transceiver}, booktitle={Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}, author={Debski, Wojciech and Winkler, Wolfgang and Sun, Yaoming and Marinkovic, Miroslav and Borngräber, Johannes and Scheytt, Christoph}, year={2012}, pages={191–194} }","short":"W. Debski, W. Winkler, Y. Sun, M. Marinkovic, J. Borngräber, C. Scheytt, in: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, 2012, pp. 191–194.","apa":"Debski, W., Winkler, W., Sun, Y., Marinkovic, M., Borngräber, J., &#38; Scheytt, C. (2012). 120 GHz Radar Mixed-Signal Transceiver. <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 191–194.","chicago":"Debski, Wojciech, Wolfgang Winkler, Yaoming Sun, Miroslav Marinkovic, Johannes Borngräber, and Christoph Scheytt. “120 GHz Radar Mixed-Signal Transceiver.” In <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 191–94, 2012.","ieee":"W. Debski, W. Winkler, Y. Sun, M. Marinkovic, J. Borngräber, and C. Scheytt, “120 GHz Radar Mixed-Signal Transceiver,” in <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 191–194.","ama":"Debski W, Winkler W, Sun Y, Marinkovic M, Borngräber J, Scheytt C. 120 GHz Radar Mixed-Signal Transceiver. In: <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>. ; 2012:191-194."},"page":"191-194","publication_identifier":{"eisbn":["978-2-87487-028-6"]},"related_material":{"link":[{"url":"978-2-87487-028-6","relation":"confirmation"}]}},{"publication_identifier":{"eisbn":["978-2-87487-027-9"]},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6459231","relation":"confirmation"}]},"year":"2012","citation":{"ama":"Wessel J, Schmalz K, Cahill B, Gastrock G, Scheytt C. Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries. In: <i>Microwave Conference (EuMC), 2012 42nd European</i>. ; 2012. doi:<a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">10.23919/EuMC.2012.6459231  </a>","ieee":"J. Wessel, K. Schmalz, B. Cahill, G. Gastrock, and C. Scheytt, “Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries,” 2012, doi: <a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">10.23919/EuMC.2012.6459231  </a>.","chicago":"Wessel, Jan, Klaus Schmalz, Brian Cahill, Gunter Gastrock, and Christoph Scheytt. “Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries.” In <i>Microwave Conference (EuMC), 2012 42nd European</i>, 2012. <a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">https://doi.org/10.23919/EuMC.2012.6459231  </a>.","bibtex":"@inproceedings{Wessel_Schmalz_Cahill_Gastrock_Scheytt_2012, title={Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries}, DOI={<a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">10.23919/EuMC.2012.6459231  </a>}, booktitle={Microwave Conference (EuMC), 2012 42nd European}, author={Wessel, Jan and Schmalz, Klaus and Cahill, Brian and Gastrock, Gunter and Scheytt, Christoph}, year={2012} }","short":"J. Wessel, K. Schmalz, B. Cahill, G. Gastrock, C. Scheytt, in: Microwave Conference (EuMC), 2012 42nd European, 2012.","mla":"Wessel, Jan, et al. “Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries.” <i>Microwave Conference (EuMC), 2012 42nd European</i>, 2012, doi:<a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">10.23919/EuMC.2012.6459231  </a>.","apa":"Wessel, J., Schmalz, K., Cahill, B., Gastrock, G., &#38; Scheytt, C. (2012). Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries. <i>Microwave Conference (EuMC), 2012 42nd European</i>. <a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">https://doi.org/10.23919/EuMC.2012.6459231  </a>"},"date_updated":"2022-01-06T06:56:20Z","date_created":"2021-09-14T12:54:40Z","author":[{"first_name":"Jan","last_name":"Wessel","full_name":"Wessel, Jan"},{"full_name":"Schmalz, Klaus","last_name":"Schmalz","first_name":"Klaus"},{"full_name":"Cahill, Brian","last_name":"Cahill","first_name":"Brian"},{"first_name":"Gunter","last_name":"Gastrock","full_name":"Gastrock, Gunter"},{"first_name":"Christoph","id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt"}],"title":"Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries","conference":{"start_date":"29.10.2012","end_date":"01.11.2012"},"doi":"10.23919/EuMC.2012.6459231  ","publication":"Microwave Conference (EuMC), 2012 42nd European","type":"conference","abstract":[{"text":"A  passive  microwave  sensor based on  microstrip  lines \r\nfor  characterizing  cell  cultivation  in  aqueous  compartments  is \r\npresented.  The  proposed  design  methodology  leads  to  a  highly \r\nsensitive biosensor  structure, which is fabricated on  Rogers 3003 \r\nmaterial. It is shown that a sufficiently high sensitivity is achieved \r\nto  monitor  the  cultivation  stadium  of  a  yeast  culture  based  on \r\ndetection  of  permittivity  changes.  The  obtained  measurement \r\nresults  show  good  agreement  with  the  performed  full  3D  EM \r\nsimulations. According to these results the presented biosensor is \r\ncapable  of  characterizing the  stage  of  yeast  cultivation  label-free \r\nand contactless.","lang":"eng"}],"status":"public","_id":"24403","department":[{"_id":"58"}],"user_id":"15931","language":[{"iso":"eng"}]},{"doi":"10.23919/EuMC.2012.6459419","conference":{"location":"Amsterdam","end_date":"01.11.2012","start_date":"29.10.2012"},"title":"Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier","author":[{"first_name":"Philip","full_name":"Ostrovskyy, Philip","last_name":"Ostrovskyy"},{"first_name":"Holger","full_name":"Heuermann, Holger","last_name":"Heuermann"},{"first_name":"Arash","last_name":"Sadeghfam","full_name":"Sadeghfam, Arash"},{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"}],"date_created":"2021-09-14T12:54:43Z","date_updated":"2022-01-06T06:56:20Z","page":"659-662","citation":{"short":"P. Ostrovskyy, H. Heuermann, A. Sadeghfam, C. Scheytt, in: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, European Microwave Week 2012, Amsterdam, 2012, pp. 659–662.","mla":"Ostrovskyy, Philip, et al. “Performance Estimation of Fully Digital Polar Modulation Driving a 2 GHz Switch-Mode Power Amplifier.” <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 659–62, doi:<a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">10.23919/EuMC.2012.6459419</a>.","bibtex":"@inproceedings{Ostrovskyy_Heuermann_Sadeghfam_Scheytt_2012, place={European Microwave Week 2012, Amsterdam}, title={Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier}, DOI={<a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">10.23919/EuMC.2012.6459419</a>}, booktitle={Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}, author={Ostrovskyy, Philip and Heuermann, Holger and Sadeghfam, Arash and Scheytt, Christoph}, year={2012}, pages={659–662} }","apa":"Ostrovskyy, P., Heuermann, H., Sadeghfam, A., &#38; Scheytt, C. (2012). Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier. <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 659–662. <a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">https://doi.org/10.23919/EuMC.2012.6459419</a>","ama":"Ostrovskyy P, Heuermann H, Sadeghfam A, Scheytt C. Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier. In: <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>. ; 2012:659-662. doi:<a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">10.23919/EuMC.2012.6459419</a>","chicago":"Ostrovskyy, Philip, Holger Heuermann, Arash Sadeghfam, and Christoph Scheytt. “Performance Estimation of Fully Digital Polar Modulation Driving a 2 GHz Switch-Mode Power Amplifier.” In <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 659–62. European Microwave Week 2012, Amsterdam, 2012. <a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">https://doi.org/10.23919/EuMC.2012.6459419</a>.","ieee":"P. Ostrovskyy, H. Heuermann, A. Sadeghfam, and C. Scheytt, “Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier,” in <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, Amsterdam, 2012, pp. 659–662, doi: <a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">10.23919/EuMC.2012.6459419</a>."},"place":"European Microwave Week 2012, Amsterdam","year":"2012","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6483886","relation":"confirmation"}]},"publication_identifier":{"eisbn":["978-2-87487-028-6"]},"language":[{"iso":"eng"}],"department":[{"_id":"58"}],"user_id":"15931","_id":"24405","status":"public","abstract":[{"lang":"eng","text":"Abstract— This paper presents a fully digital transmitter \r\narchitecture based on a digital polar modulator (DPM) and \r\nswitch-mode power amplifier (SMPA). A simple method for \r\ncomparison and estimation of different digital modulation \r\ntechniques for SMPA is described. An estimation of the proposed \r\ndigital polar modulator properties was done by means of a \r\n2.1..2.2 GHz  class-F  power  amplifier.  For  a  CDMA  signal  with \r\n9.5 dB  peak-to-average  power  ratio  (PAPR),  the  class-F  based \r\namplifier  module  driven  by  DPM  pulse  train  shows  more  than \r\n1 W output power and more than 10 % of drain efficiency. "}],"publication":"Microwave Integrated Circuits Conference (EuMIC), 2012 7th European","type":"conference"},{"date_updated":"2022-01-06T06:56:20Z","author":[{"full_name":"Mao, Yanfei","last_name":"Mao","first_name":"Yanfei"},{"first_name":"Klaus","full_name":"Schmalz, Klaus","last_name":"Schmalz"},{"first_name":"Johannes","full_name":"Borngräber, Johannes","last_name":"Borngräber"},{"last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144","first_name":"Christoph"}],"date_created":"2021-09-14T12:54:44Z","volume":"PP","title":"245-GHz subharmonic receiver in SiGe ","conference":{"end_date":"30.10.2012","start_date":"29.10.2012"},"publication_identifier":{"eisbn":["978-2-87487-028-6"]},"issue":"99","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6483766","relation":"confirmation"}]},"year":"2012","citation":{"ieee":"Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “245-GHz subharmonic receiver in SiGe ,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. PP, no. 99, pp. 183–186, 2012.","chicago":"Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt. “245-GHz Subharmonic Receiver in SiGe .” <i>Microwave Theory and Techniques, IEEE Transactions On</i> PP, no. 99 (2012): 183–86.","ama":"Mao Y, Schmalz K, Borngräber J, Scheytt C. 245-GHz subharmonic receiver in SiGe . <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2012;PP(99):183-186.","short":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On PP (2012) 183–186.","mla":"Mao, Yanfei, et al. “245-GHz Subharmonic Receiver in SiGe .” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. PP, no. 99, 2012, pp. 183–86.","bibtex":"@article{Mao_Schmalz_Borngräber_Scheytt_2012, title={245-GHz subharmonic receiver in SiGe }, volume={PP}, number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}, year={2012}, pages={183–186} }","apa":"Mao, Y., Schmalz, K., Borngräber, J., &#38; Scheytt, C. (2012). 245-GHz subharmonic receiver in SiGe . <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>PP</i>(99), 183–186."},"page":"183-186","_id":"24406","user_id":"15931","department":[{"_id":"58"}],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Microwave Theory and Techniques, IEEE Transactions on","abstract":[{"text":"A  subharmonic  receiver  for  sensing  applications  in  \r\nthe 245 GHz ISM band has been proposed. The receiver consists \r\nof a  single-ended common base LNA, a  60  GHz push-push  VCO \r\nwith 1/32 divider, a transconductance 4th subharmonic mixer and \r\nIF  amplifier.  The  receiver  is  fabricated  in  fT/fmax=300/500  GHz  \r\nSiGe:  C  BiCMOS  technology.  Its  measured  single-ended  gain  is  \r\n21  dB  at  243  GHz  with  tuning  range  of  12  GHz,  and  the  single-\r\nside  band  noise  figure  is  32  dB.  The  input  1-dB  compression  \r\npoint is at -37 dBm. The receiver dissipates a power of 358 mW.  \r\nIndex  Terms—  SiGe  technology,  millimeter-wave  circuits,  245  \r\nGHz, CB LNA, SHM, VCO, sub-harmonic receiver.","lang":"eng"}],"status":"public"},{"year":"2012","page":"2524-2531","intvolume":"        60","citation":{"apa":"Ostrovskyy, P., Gustat, H., Ortmanns, M., &#38; Scheytt, C. (2012). A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>60</i>(8), 2524–2531. <a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">https://doi.org/10.1109/TMTT.2012.2203143</a>","short":"P. Ostrovskyy, H. Gustat, M. Ortmanns, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On 60 (2012) 2524–2531.","mla":"Ostrovskyy, Philip, et al. “A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 60, no. 8, 2012, pp. 2524–31, doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>.","bibtex":"@article{Ostrovskyy_Gustat_Ortmanns_Scheytt_2012, title={A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier}, volume={60}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>}, number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Ostrovskyy, Philip and Gustat, Hans and Ortmanns, Maurits and Scheytt, Christoph}, year={2012}, pages={2524–2531} }","ieee":"P. Ostrovskyy, H. Gustat, M. Ortmanns, and C. Scheytt, “A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 60, no. 8, pp. 2524–2531, 2012, doi: <a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>.","chicago":"Ostrovskyy, Philip, Hans Gustat, Maurits Ortmanns, and Christoph Scheytt. “A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 60, no. 8 (2012): 2524–31. <a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">https://doi.org/10.1109/TMTT.2012.2203143</a>.","ama":"Ostrovskyy P, Gustat H, Ortmanns M, Scheytt C. A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2012;60(8):2524-2531. doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>"},"publication_identifier":{"eissn":["1557-9670"]},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6227312"}]},"issue":"8","title":"A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier","doi":"10.1109/TMTT.2012.2203143","date_updated":"2022-01-06T06:56:20Z","volume":60,"author":[{"first_name":"Philip","last_name":"Ostrovskyy","full_name":"Ostrovskyy, Philip"},{"last_name":"Gustat","full_name":"Gustat, Hans","first_name":"Hans"},{"full_name":"Ortmanns, Maurits","last_name":"Ortmanns","first_name":"Maurits"},{"first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144"}],"date_created":"2021-09-14T12:54:46Z","abstract":[{"lang":"eng","text":"A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes switching conditions for the amplification stage of the switch-mode power amplifier in comparison to the BDSM architecture. The BDSM is clocked at 5 GHz, while the notch frequency can be tuned in a range of 2.1-2.2 GHz. The modulator achieves 46.6-dB signal-to-noise and distortion ratio in 10-MHz bandwidth for a sine-wave input at 2.2 GHz consuming 330 mW from a 3-V supply. The BDSM was also tested with a single-channel WCDMA signal. It has demonstrated 42.2-dBc adjacent channel leakage ratio at 5-MHz offset and less than 2.1% error vector magnitude over the tuning range."}],"status":"public","publication":"Microwave Theory and Techniques, IEEE Transactions on","type":"journal_article","language":[{"iso":"eng"}],"_id":"24407","department":[{"_id":"58"}],"user_id":"15931"},{"date_updated":"2022-01-06T06:56:20Z","volume":60,"author":[{"first_name":"Yaoming","last_name":"Sun","full_name":"Sun, Yaoming"},{"first_name":"Gerhard G.","full_name":"Fischer, Gerhard G.","last_name":"Fischer"},{"last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144","first_name":"Christoph"}],"date_created":"2021-09-14T12:59:31Z","title":"A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche","doi":"10.1109/TMTT.2012.2202684","publication_identifier":{"eissn":["1557-9670 "]},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6236242","relation":"confirmation"}]},"issue":"8","year":"2012","page":" 2581 - 2589","intvolume":"        60","citation":{"ieee":"Y. Sun, G. G. Fischer, and C. Scheytt, “A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 60, no. 8, pp. 2581–2589, 2012, doi: <a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">10.1109/TMTT.2012.2202684</a>.","chicago":"Sun, Yaoming, Gerhard G. Fischer, and Christoph Scheytt. “A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 60, no. 8 (2012): 2581–89. <a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">https://doi.org/10.1109/TMTT.2012.2202684</a>.","ama":"Sun Y, Fischer GG, Scheytt C. A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2012;60(8):2581-2589. doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">10.1109/TMTT.2012.2202684</a>","apa":"Sun, Y., Fischer, G. G., &#38; Scheytt, C. (2012). A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>60</i>(8), 2581–2589. <a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">https://doi.org/10.1109/TMTT.2012.2202684</a>","mla":"Sun, Yaoming, et al. “A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 60, no. 8, 2012, pp. 2581–89, doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">10.1109/TMTT.2012.2202684</a>.","short":"Y. Sun, G.G. Fischer, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On 60 (2012) 2581–2589.","bibtex":"@article{Sun_Fischer_Scheytt_2012, title={A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche}, volume={60}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">10.1109/TMTT.2012.2202684</a>}, number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Sun, Yaoming and Fischer, Gerhard G. and Scheytt, Christoph}, year={2012}, pages={2581–2589} }"},"_id":"24408","department":[{"_id":"58"}],"user_id":"15931","language":[{"iso":"eng"}],"publication":"Microwave Theory and Techniques, IEEE Transactions on","type":"journal_article","abstract":[{"text":"This paper presents a 60-GHz SiGe PA with a 29.2% power-added efficiency (PAE), a peak power of 16.8 dBm, and a peak output 1-dB compression (OP 1dB ) of 14 dBm. Its measured gain is 13.5 dB at 60 GHz with a corresponding 3-dB bandwidth of 47-74 GHz. The PAE is above 25% with a supply voltage from 2.2 to 4 V. A cascode stage has been analyzed and used as the amplifier core. The high PAE is achieved by pushing the upper transistor of the cascode stage to weak avalanche area and correct transistor sizing. The linearity is achieved by optimizing the input matching and emitter degeneration. Safe operation conditions of heterojunction bipolar transistors at dc and high frequencies have been investigated at weak avalanche area. A safe operation boundary for high frequencies is given based on our experimental results and analytical derivations. Large-signal stress tests have shown there is no performance degradation and have proved the validity of this safe operation boundary.","lang":"eng"}],"status":"public"},{"date_updated":"2022-01-06T06:56:20Z","volume":59,"author":[{"full_name":"Sedighi, Behnam","last_name":"Sedighi","first_name":"Behnam"},{"first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144"}],"date_created":"2021-09-14T12:59:32Z","title":"Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links","doi":"10.1109/TCSII.2012.2204118","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6241407"}]},"issue":"8","year":"2012","page":"461-465","intvolume":"        59","citation":{"ama":"Sedighi B, Scheytt C. Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links. <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>. 2012;59(8):461-465. doi:<a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>","ieee":"B. Sedighi and C. Scheytt, “Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links,” <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>, vol. 59, no. 8, pp. 461–465, 2012, doi: <a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>.","chicago":"Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i> 59, no. 8 (2012): 461–65. <a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">https://doi.org/10.1109/TCSII.2012.2204118</a>.","apa":"Sedighi, B., &#38; Scheytt, C. (2012). Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links. <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, <i>59</i>(8), 461–465. <a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">https://doi.org/10.1109/TCSII.2012.2204118</a>","mla":"Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, vol. 59, no. 8, 2012, pp. 461–65, doi:<a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>.","bibtex":"@article{Sedighi_Scheytt_2012, title={Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links}, volume={59}, DOI={<a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>}, number={8}, journal={(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering}, author={Sedighi, Behnam and Scheytt, Christoph}, year={2012}, pages={461–465} }","short":"B. Sedighi, C. Scheytt, (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering 59 (2012) 461–465."},"_id":"24409","department":[{"_id":"58"}],"user_id":"15931","language":[{"iso":"eng"}],"publication":"(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering","type":"journal_article","abstract":[{"text":"We propose a new circuit for the realization of transimpedance amplifiers (TIAs), targeted at reducing the input-referred noise of the TIA or alternatively increasing the bandwidth, without increasing the power dissipation. An intensive theoretical analysis of the method is given. A prototype chip is fabricated in 0.25- μm SiGe BiCMOS technology. The TIA has a gain of 71 dBΩ , a bandwidth of 20.5 GHz, and an average input-referred current noise density of 18 pA/√Hz . The circuit operates from a 2.5-V supply, and power dissipation is 57 mW.","lang":"eng"}],"status":"public"},{"year":"2012","citation":{"mla":"Scheytt, Christoph, et al. “SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz.” <i>IMS 2012 (International Microwave Symposium)</i>, 2012, doi:<a href=\"https://doi.org/10.1109/MWSYM.2012.6259487\">10.1109/MWSYM.2012.6259487</a>.","bibtex":"@inproceedings{Scheytt_Sun_Schmalz_Wang_2012, title={SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz}, DOI={<a href=\"https://doi.org/10.1109/MWSYM.2012.6259487\">10.1109/MWSYM.2012.6259487</a>}, booktitle={IMS 2012 (International Microwave Symposium)}, author={Scheytt, Christoph and Sun, Yaoming and Schmalz, Klaus and Wang, Ruoyu}, year={2012} }","short":"C. Scheytt, Y. Sun, K. Schmalz, R. Wang, in: IMS 2012 (International Microwave Symposium), 2012.","apa":"Scheytt, C., Sun, Y., Schmalz, K., &#38; Wang, R. (2012). SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz. <i>IMS 2012 (International Microwave Symposium)</i>. <a href=\"https://doi.org/10.1109/MWSYM.2012.6259487\">https://doi.org/10.1109/MWSYM.2012.6259487</a>","ama":"Scheytt C, Sun Y, Schmalz K, Wang R. SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz. In: <i>IMS 2012 (International Microwave Symposium)</i>. ; 2012. doi:<a href=\"https://doi.org/10.1109/MWSYM.2012.6259487\">10.1109/MWSYM.2012.6259487</a>","ieee":"C. Scheytt, Y. Sun, K. Schmalz, and R. Wang, “SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz,” Montreal, QC, Canada, 2012, doi: <a href=\"https://doi.org/10.1109/MWSYM.2012.6259487\">10.1109/MWSYM.2012.6259487</a>.","chicago":"Scheytt, Christoph, Yaoming Sun, Klaus Schmalz, and Ruoyu Wang. “SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz.” In <i>IMS 2012 (International Microwave Symposium)</i>, 2012. <a href=\"https://doi.org/10.1109/MWSYM.2012.6259487\">https://doi.org/10.1109/MWSYM.2012.6259487</a>."},"publication_identifier":{"eisbn":["978-1-4673-1088-8"]},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6259487","relation":"confirmation"}]},"title":"SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz","conference":{"start_date":"17.06.2012","location":"Montreal, QC, Canada","end_date":"22.06.2012"},"doi":"10.1109/MWSYM.2012.6259487","date_updated":"2022-01-06T06:56:20Z","date_created":"2021-09-14T13:01:20Z","author":[{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"},{"first_name":"Yaoming","last_name":"Sun","full_name":"Sun, Yaoming"},{"full_name":"Schmalz, Klaus","last_name":"Schmalz","first_name":"Klaus"},{"first_name":"Ruoyu","full_name":"Wang, Ruoyu","last_name":"Wang"}],"abstract":[{"lang":"eng","text":"This paper reviews recent results of wireless transmitter and receiver ICs at 122 and 245 GHz in 0.13 µm SiGe BiCMOS technology together with an efficient on-chip antenna. A transmitter IC with 5 dBm output power and directional onchip power measurement for built-in-self-test is presented. A 122 GHz passive HBT diode mixer design is discussed and results are shown. The mixer exhibits superior 1/f noise performance which makes it especially suitable for FMCW/CW radar sensors. Furthermore a highly integrated 245 GHz transmitter with 1 dBm maximum output power was realized. The IC dissipates only 380 mW. A low-loss on-chip antenna for 130 GHz with 60% efficiency was implemented and measured. It uses localized backside etching techniques and allows for simplified and very cost-efficient mm-wave packaging"}],"status":"public","publication":"IMS 2012 (International Microwave Symposium)","type":"conference","language":[{"iso":"eng"}],"_id":"24410","department":[{"_id":"58"}],"user_id":"15931"},{"status":"public","abstract":[{"text":"A 245 GHz transmitter for sensing applications has been realized, which consists of a push-push VCO with 1/64 frequency divider, a transformer- coupled one-stage power amplifier, and a frequency doubler. It is fabricated in 0.13μm SiGe:C BiCMOS technology with f T /f max of 300GHz/500GHz. The peak output power of the transmitter is 2 dBm. The 3-dB bandwidth reaches from 229 GHz to 251 GHz. The output power is 1 dBm at 245 GHz. The transmitter dissipates 0.29 W. Additionally, a test-circuit with an integrated two-stage power amplifier and a frequency doubler is presented, which reaches 1.4 dBm at 245 GHz and dissipates 0.19 W.","lang":"eng"}],"type":"conference","publication":"Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE","language":[{"iso":"eng"}],"user_id":"15931","department":[{"_id":"58"}],"_id":"24411","citation":{"ama":"Schmalz K, Borngräber J, Heinemann B, Rücker H, Scheytt C. A 245 GHz transmitter in SiGe technology. In: <i>Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE</i>. ; 2012:195-198. doi:<a href=\"https://doi.org/10.1109/RFIC.2012.6242262\">10.1109/RFIC.2012.6242262</a>","chicago":"Schmalz, Klaus, Johannes Borngräber, Bernd Heinemann, Holger Rücker, and Christoph Scheytt. “A 245 GHz Transmitter in SiGe Technology.” In <i>Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE</i>, 195–98, 2012. <a href=\"https://doi.org/10.1109/RFIC.2012.6242262\">https://doi.org/10.1109/RFIC.2012.6242262</a>.","ieee":"K. Schmalz, J. Borngräber, B. Heinemann, H. Rücker, and C. Scheytt, “A 245 GHz transmitter in SiGe technology,” in <i>Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE</i>, 2012, pp. 195–198, doi: <a href=\"https://doi.org/10.1109/RFIC.2012.6242262\">10.1109/RFIC.2012.6242262</a>.","bibtex":"@inproceedings{Schmalz_Borngräber_Heinemann_Rücker_Scheytt_2012, title={A 245 GHz transmitter in SiGe technology}, DOI={<a href=\"https://doi.org/10.1109/RFIC.2012.6242262\">10.1109/RFIC.2012.6242262</a>}, booktitle={Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE}, author={Schmalz, Klaus and Borngräber, Johannes and Heinemann, Bernd and Rücker, Holger and Scheytt, Christoph}, year={2012}, pages={195–198} }","short":"K. Schmalz, J. Borngräber, B. Heinemann, H. Rücker, C. Scheytt, in: Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE, 2012, pp. 195–198.","mla":"Schmalz, Klaus, et al. “A 245 GHz Transmitter in SiGe Technology.” <i>Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE</i>, 2012, pp. 195–98, doi:<a href=\"https://doi.org/10.1109/RFIC.2012.6242262\">10.1109/RFIC.2012.6242262</a>.","apa":"Schmalz, K., Borngräber, J., Heinemann, B., Rücker, H., &#38; Scheytt, C. (2012). A 245 GHz transmitter in SiGe technology. <i>Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE</i>, 195–198. <a href=\"https://doi.org/10.1109/RFIC.2012.6242262\">https://doi.org/10.1109/RFIC.2012.6242262</a>"},"page":"195 -198","year":"2012","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6242262","relation":"confirmation"}]},"publication_identifier":{"eisbn":["978-1-4673-0416-0"]},"conference":{"end_date":"19.06.2012","start_date":"17.06.2012"},"doi":"10.1109/RFIC.2012.6242262","title":"A 245 GHz transmitter in SiGe technology","author":[{"first_name":"Klaus","full_name":"Schmalz, Klaus","last_name":"Schmalz"},{"first_name":"Johannes","full_name":"Borngräber, Johannes","last_name":"Borngräber"},{"last_name":"Heinemann","full_name":"Heinemann, Bernd","first_name":"Bernd"},{"full_name":"Rücker, Holger","last_name":"Rücker","first_name":"Holger"},{"last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144","first_name":"Christoph"}],"date_created":"2021-09-14T13:01:21Z","date_updated":"2022-01-06T06:56:20Z"},{"publication_identifier":{"eisbn":["978-1-4673-1088-8"]},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6258392"}]},"year":"2012","citation":{"ama":"Laemmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D. An integrated 125GHz Sensor with read-out circuit for permittivity measurement of liquids. In: <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>. ; 2012:1-3. doi:<a href=\"https://doi.org/10.1109/MWSYM.2012.6258392\">10.1109/MWSYM.2012.6258392</a>","ieee":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, and D. Kissinger, “An integrated 125GHz Sensor with read-out circuit for permittivity measurement of liquids,” in <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 2012, pp. 1–3, doi: <a href=\"https://doi.org/10.1109/MWSYM.2012.6258392\">10.1109/MWSYM.2012.6258392</a>.","chicago":"Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Robert Weigel, and Dietmar Kissinger. “An Integrated 125GHz Sensor with Read-out Circuit for Permittivity Measurement of Liquids.” In <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 1–3, 2012. <a href=\"https://doi.org/10.1109/MWSYM.2012.6258392\">https://doi.org/10.1109/MWSYM.2012.6258392</a>.","short":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, D. Kissinger, in: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3.","mla":"Laemmle, Benjamin, et al. “An Integrated 125GHz Sensor with Read-out Circuit for Permittivity Measurement of Liquids.” <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 2012, pp. 1–3, doi:<a href=\"https://doi.org/10.1109/MWSYM.2012.6258392\">10.1109/MWSYM.2012.6258392</a>.","bibtex":"@inproceedings{Laemmle_Schmalz_Scheytt_Weigel_Kissinger_2012, title={An integrated 125GHz Sensor with read-out circuit for permittivity measurement of liquids}, DOI={<a href=\"https://doi.org/10.1109/MWSYM.2012.6258392\">10.1109/MWSYM.2012.6258392</a>}, booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger, Dietmar}, year={2012}, pages={1–3} }","apa":"Laemmle, B., Schmalz, K., Scheytt, C., Weigel, R., &#38; Kissinger, D. (2012). An integrated 125GHz Sensor with read-out circuit for permittivity measurement of liquids. <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 1–3. <a href=\"https://doi.org/10.1109/MWSYM.2012.6258392\">https://doi.org/10.1109/MWSYM.2012.6258392</a>"},"page":"1 -3","date_updated":"2022-01-06T06:56:20Z","author":[{"first_name":"Benjamin","last_name":"Laemmle","full_name":"Laemmle, Benjamin"},{"full_name":"Schmalz, Klaus","last_name":"Schmalz","first_name":"Klaus"},{"first_name":"Christoph","id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt"},{"full_name":"Weigel, Robert","last_name":"Weigel","first_name":"Robert"},{"first_name":"Dietmar","full_name":"Kissinger, Dietmar","last_name":"Kissinger"}],"date_created":"2021-09-14T13:01:23Z","title":"An integrated 125GHz Sensor with read-out circuit for permittivity measurement of liquids","doi":"10.1109/MWSYM.2012.6258392","conference":{"start_date":"17.06.2012","end_date":"22.06.2012"},"type":"conference","publication":"Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International","abstract":[{"text":"In this publication an integrated dielectric sensor with read-out circuit in SiGe BiCMOS technology at 125GHz is presented. The sensor consist of a 500 µm shorted half-wave coplanar waveguide transmission line in the top metal layer. Read-out of the sensor is performed by measurement of its reflection coefficient with an integrated multiprobe reflectometer and signal source. The MMIC has been fabricated in a 190-GHz f T SiGe:C BiCMOS technology and assembled on a printed circuit board. Functionality of the sensor is demonstrated with a stimulus frequency from 118 to 133GHz with immersion of the sensor into a binary methanol-ethanol mixture.","lang":"eng"}],"status":"public","_id":"24412","user_id":"15931","department":[{"_id":"58"}],"language":[{"iso":"eng"}]},{"date_updated":"2022-01-06T06:56:20Z","date_created":"2021-09-14T13:01:24Z","author":[{"first_name":"Philip","full_name":"Ostrovskyy, Philip","last_name":"Ostrovskyy"},{"first_name":"Christoph","last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph"},{"first_name":"SungJun","last_name":"Lee","full_name":"Lee, SungJun"},{"last_name":"Park","full_name":"Park, BongHyuk","first_name":"BongHyuk"},{"last_name":"Jung","full_name":"Jung, JaeHo","first_name":"JaeHo"}],"title":"A fully digital polar modulator for switch mode RF power amplifier","conference":{"end_date":"23.05.2012","start_date":"20.05.2012"},"doi":"10.1109/ISCAS.2012.6271777","publication_identifier":{"eisbn":["978-1-4673-0219-7"]},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6271777"}]},"year":"2012","page":"2385-2388","citation":{"apa":"Ostrovskyy, P., Scheytt, C., Lee, S., Park, B., &#38; Jung, J. (2012). A fully digital polar modulator for switch mode RF power amplifier. <i>Proc. IEEE Int Circuits and Systems (ISCAS) Symp</i>, 2385–2388. <a href=\"https://doi.org/10.1109/ISCAS.2012.6271777\">https://doi.org/10.1109/ISCAS.2012.6271777</a>","mla":"Ostrovskyy, Philip, et al. “A Fully Digital Polar Modulator for Switch Mode RF Power Amplifier.” <i>Proc. IEEE Int Circuits and Systems (ISCAS) Symp</i>, 2012, pp. 2385–88, doi:<a href=\"https://doi.org/10.1109/ISCAS.2012.6271777\">10.1109/ISCAS.2012.6271777</a>.","short":"P. Ostrovskyy, C. Scheytt, S. Lee, B. Park, J. Jung, in: Proc. IEEE Int Circuits and Systems (ISCAS) Symp, 2012, pp. 2385–2388.","bibtex":"@inproceedings{Ostrovskyy_Scheytt_Lee_Park_Jung_2012, title={A fully digital polar modulator for switch mode RF power amplifier}, DOI={<a href=\"https://doi.org/10.1109/ISCAS.2012.6271777\">10.1109/ISCAS.2012.6271777</a>}, booktitle={Proc. IEEE Int Circuits and Systems (ISCAS) Symp}, author={Ostrovskyy, Philip and Scheytt, Christoph and Lee, SungJun and Park, BongHyuk and Jung, JaeHo}, year={2012}, pages={2385–2388} }","ieee":"P. Ostrovskyy, C. Scheytt, S. Lee, B. Park, and J. Jung, “A fully digital polar modulator for switch mode RF power amplifier,” in <i>Proc. IEEE Int Circuits and Systems (ISCAS) Symp</i>, 2012, pp. 2385–2388, doi: <a href=\"https://doi.org/10.1109/ISCAS.2012.6271777\">10.1109/ISCAS.2012.6271777</a>.","chicago":"Ostrovskyy, Philip, Christoph Scheytt, SungJun Lee, BongHyuk Park, and JaeHo Jung. “A Fully Digital Polar Modulator for Switch Mode RF Power Amplifier.” In <i>Proc. IEEE Int Circuits and Systems (ISCAS) Symp</i>, 2385–88, 2012. <a href=\"https://doi.org/10.1109/ISCAS.2012.6271777\">https://doi.org/10.1109/ISCAS.2012.6271777</a>.","ama":"Ostrovskyy P, Scheytt C, Lee S, Park B, Jung J. A fully digital polar modulator for switch mode RF power amplifier. In: <i>Proc. IEEE Int Circuits and Systems (ISCAS) Symp</i>. ; 2012:2385-2388. doi:<a href=\"https://doi.org/10.1109/ISCAS.2012.6271777\">10.1109/ISCAS.2012.6271777</a>"},"_id":"24413","department":[{"_id":"58"}],"user_id":"15931","language":[{"iso":"eng"}],"publication":"Proc. IEEE Int Circuits and Systems (ISCAS) Symp","type":"conference","abstract":[{"text":"In this paper, a novel fully digital modulator for a switch mode power amplifier (SMPA) is presented. The modulator converts the input baseband amplitude and phase signals into a two-level pulse train for driving an RF SMPA. The simulation results demonstrated a proof of the concept. The proposed architecture is analyzed in terms of accuracy by measuring EVM. The impact of the modulator parameters on the SMPA performance is investigated and corresponding results are shown. The modulator was simulated with a 20 MHz LTE signal.","lang":"eng"}],"status":"public"},{"abstract":[{"text":"We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.","lang":"eng"}],"status":"public","type":"journal_article","publication":"(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering","language":[{"iso":"eng"}],"_id":"24414","user_id":"15931","department":[{"_id":"58"}],"year":"2012","citation":{"chicago":"Mehr, Wolfgang, Jarek Dabrowski, Max C. Lemme, Gunther Lippert, Grzegorz Lupina, Mikael Ostling, Ya-Hong Xie, and Christoph Scheytt. “Vertical Graphene Base Transistor.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i> 33, no. 5 (2012): 691–93. <a href=\"https://doi.org/10.1109/LED.2012.2189193\">https://doi.org/10.1109/LED.2012.2189193</a>.","ieee":"W. Mehr <i>et al.</i>, “Vertical Graphene Base Transistor,” <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>, vol. 33, no. 5, pp. 691–693, 2012, doi: <a href=\"https://doi.org/10.1109/LED.2012.2189193\">10.1109/LED.2012.2189193</a>.","ama":"Mehr W, Dabrowski J, Lemme MC, et al. Vertical Graphene Base Transistor. <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>. 2012;33(5):691-693. doi:<a href=\"https://doi.org/10.1109/LED.2012.2189193\">10.1109/LED.2012.2189193</a>","mla":"Mehr, Wolfgang, et al. “Vertical Graphene Base Transistor.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, vol. 33, no. 5, 2012, pp. 691–93, doi:<a href=\"https://doi.org/10.1109/LED.2012.2189193\">10.1109/LED.2012.2189193</a>.","bibtex":"@article{Mehr_Dabrowski_Lemme_Lippert_Lupina_Ostling_Xie_Scheytt_2012, title={Vertical Graphene Base Transistor}, volume={33}, DOI={<a href=\"https://doi.org/10.1109/LED.2012.2189193\">10.1109/LED.2012.2189193</a>}, number={5}, journal={(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering}, author={Mehr, Wolfgang and Dabrowski, Jarek and Lemme, Max C. and Lippert, Gunther and Lupina, Grzegorz and Ostling, Mikael and Xie, Ya-Hong and Scheytt, Christoph}, year={2012}, pages={691–693} }","short":"W. Mehr, J. Dabrowski, M.C. Lemme, G. Lippert, G. Lupina, M. Ostling, Y.-H. Xie, C. Scheytt, (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering 33 (2012) 691–693.","apa":"Mehr, W., Dabrowski, J., Lemme, M. C., Lippert, G., Lupina, G., Ostling, M., Xie, Y.-H., &#38; Scheytt, C. (2012). Vertical Graphene Base Transistor. <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, <i>33</i>(5), 691–693. <a href=\"https://doi.org/10.1109/LED.2012.2189193\">https://doi.org/10.1109/LED.2012.2189193</a>"},"intvolume":"        33","page":"691-693","publication_identifier":{"eissn":["1558-0563 "]},"issue":"5","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6177217"}]},"title":"Vertical Graphene Base Transistor","doi":"10.1109/LED.2012.2189193","date_updated":"2022-01-06T06:56:20Z","date_created":"2021-09-14T13:01:25Z","author":[{"full_name":"Mehr, Wolfgang","last_name":"Mehr","first_name":"Wolfgang"},{"last_name":"Dabrowski","full_name":"Dabrowski, Jarek","first_name":"Jarek"},{"full_name":"Lemme, Max C.","last_name":"Lemme","first_name":"Max C."},{"first_name":"Gunther","full_name":"Lippert, Gunther","last_name":"Lippert"},{"first_name":"Grzegorz","last_name":"Lupina","full_name":"Lupina, Grzegorz"},{"first_name":"Mikael","last_name":"Ostling","full_name":"Ostling, Mikael"},{"full_name":"Xie, Ya-Hong","last_name":"Xie","first_name":"Ya-Hong"},{"first_name":"Christoph","last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph"}],"volume":33},{"publication":"EuCAP2012 (European Conference on Antennas and Propagation)","type":"conference","status":"public","abstract":[{"lang":"eng","text":"Millimeter-Wave (mm-W) is considered a potential technology for high-data rate wireless transmission and for high-resolution short-range radar, due to the 7-9 GHz bandwidth at the 60 GHz unlicensed band available worldwide. Developing ultrawideband architectures including multiple-input-multiple-output (MIMO) antenna systems at mm-W offer many advantages including jointly optimized analogue and digital signal processing at carrier frequency and baseband. This allows for flexible antenna designs and reduced losses, as many passive structures can be avoided at both sides of the link. Besides, based on flexible polarimetric approaches, the polarimetric propagation of electromagnetic waves can be exploited. In this paper we present a 60 GHz polarimetric MIMO system architecture, which includes analogue miniaturized frontends designed and manufactured by multi-layer packaging technologies. Such architecture permitted the design of compact MIMO radar and multi-dimensional channel sounding. The MIMO approach allows not only polarimetric filtering and fully polarimetric/directional signal processing to increase the signal-to-clutter-plus-noise ratio of mm-W radar systems, but also the full characterization of wireless channels including multipath with orthogonal polarizations."}],"department":[{"_id":"58"}],"user_id":"15931","_id":"24415","language":[{"iso":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/abstract/document/6206544"}]},"publication_identifier":{"eisbn":["978-1-4577-0920-3"]},"page":"2578-2582","citation":{"ama":"Garcia-Ariza A-P, Müller R, Stephan R, et al. 60 GHz Polarimetric MIMO Sensing: architectures and technology. In: <i>EuCAP2012 (European Conference on Antennas and Propagation)</i>. ; 2012:2578-2582. doi:<a href=\"https://doi.org/10.1109/EuCAP.2012.6206544\">10.1109/EuCAP.2012.6206544</a>","ieee":"A.-P. Garcia-Ariza <i>et al.</i>, “60 GHz Polarimetric MIMO Sensing: architectures and technology,” in <i>EuCAP2012 (European Conference on Antennas and Propagation)</i>, 2012, pp. 2578–2582, doi: <a href=\"https://doi.org/10.1109/EuCAP.2012.6206544\">10.1109/EuCAP.2012.6206544</a>.","chicago":"Garcia-Ariza, Alexis-Paolo, Robert Müller, Ralf Stephan, Frank Wollenschläger, Alexander Schulz, Mohamed Elkhouly, Christoph Scheytt, et al. “60 GHz Polarimetric MIMO Sensing: Architectures and Technology.” In <i>EuCAP2012 (European Conference on Antennas and Propagation)</i>, 2578–82. Prague, 2012. <a href=\"https://doi.org/10.1109/EuCAP.2012.6206544\">https://doi.org/10.1109/EuCAP.2012.6206544</a>.","apa":"Garcia-Ariza, A.-P., Müller, R., Stephan, R., Wollenschläger, F., Schulz, A., Elkhouly, M., Scheytt, C., Trautwein, U., Müller, J., Thomae, R., &#38; Hein, M. (2012). 60 GHz Polarimetric MIMO Sensing: architectures and technology. <i>EuCAP2012 (European Conference on Antennas and Propagation)</i>, 2578–2582. <a href=\"https://doi.org/10.1109/EuCAP.2012.6206544\">https://doi.org/10.1109/EuCAP.2012.6206544</a>","mla":"Garcia-Ariza, Alexis-Paolo, et al. “60 GHz Polarimetric MIMO Sensing: Architectures and Technology.” <i>EuCAP2012 (European Conference on Antennas and Propagation)</i>, 2012, pp. 2578–82, doi:<a href=\"https://doi.org/10.1109/EuCAP.2012.6206544\">10.1109/EuCAP.2012.6206544</a>.","short":"A.-P. Garcia-Ariza, R. Müller, R. Stephan, F. Wollenschläger, A. Schulz, M. Elkhouly, C. Scheytt, U. Trautwein, J. Müller, R. Thomae, M. Hein, in: EuCAP2012 (European Conference on Antennas and Propagation), Prague, 2012, pp. 2578–2582.","bibtex":"@inproceedings{Garcia-Ariza_Müller_Stephan_Wollenschläger_Schulz_Elkhouly_Scheytt_Trautwein_Müller_Thomae_et al._2012, place={Prague}, title={60 GHz Polarimetric MIMO Sensing: architectures and technology}, DOI={<a href=\"https://doi.org/10.1109/EuCAP.2012.6206544\">10.1109/EuCAP.2012.6206544</a>}, booktitle={EuCAP2012 (European Conference on Antennas and Propagation)}, author={Garcia-Ariza, Alexis-Paolo and Müller, Robert and Stephan, Ralf and Wollenschläger, Frank and Schulz, Alexander and Elkhouly, Mohamed and Scheytt, Christoph and Trautwein, Uwe and Müller, Jens and Thomae, Reiner and et al.}, year={2012}, pages={2578–2582} }"},"place":"Prague","year":"2012","date_created":"2021-09-14T13:01:26Z","author":[{"last_name":"Garcia-Ariza","full_name":"Garcia-Ariza, Alexis-Paolo","first_name":"Alexis-Paolo"},{"first_name":"Robert","full_name":"Müller, Robert","last_name":"Müller"},{"first_name":"Ralf","full_name":"Stephan, Ralf","last_name":"Stephan"},{"first_name":"Frank","last_name":"Wollenschläger","full_name":"Wollenschläger, Frank"},{"full_name":"Schulz, Alexander","last_name":"Schulz","first_name":"Alexander"},{"first_name":"Mohamed","full_name":"Elkhouly, Mohamed","last_name":"Elkhouly"},{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"},{"full_name":"Trautwein, Uwe","last_name":"Trautwein","first_name":"Uwe"},{"last_name":"Müller","full_name":"Müller, Jens","id":"1245","first_name":"Jens"},{"last_name":"Thomae","full_name":"Thomae, Reiner","first_name":"Reiner"},{"last_name":"Hein","full_name":"Hein, Matthias","first_name":"Matthias"}],"date_updated":"2022-01-06T06:56:20Z","doi":"10.1109/EuCAP.2012.6206544","title":"60 GHz Polarimetric MIMO Sensing: architectures and technology"},{"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6185149"}]},"publication_identifier":{"eisbn":["978-3-9812668-4-9"]},"citation":{"short":"M. Elkhouly, S. Glisic, F. Ellinger, C. Scheytt, in: GeMIC 2012, 2012, pp. 1–4.","bibtex":"@inproceedings{Elkhouly_Glisic_Ellinger_Scheytt_2012, title={120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology}, booktitle={GeMIC 2012}, author={Elkhouly, Mohamed and Glisic, Srdjan and Ellinger, Frank and Scheytt, Christoph}, year={2012}, pages={1–4} }","mla":"Elkhouly, Mohamed, et al. “120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS Technology.” <i>GeMIC 2012</i>, 2012, pp. 1–4.","apa":"Elkhouly, M., Glisic, S., Ellinger, F., &#38; Scheytt, C. (2012). 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology. <i>GeMIC 2012</i>, 1–4.","ieee":"M. Elkhouly, S. Glisic, F. Ellinger, and C. Scheytt, “120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology,” in <i>GeMIC 2012</i>, 2012, pp. 1–4.","chicago":"Elkhouly, Mohamed, Srdjan Glisic, Frank Ellinger, and Christoph Scheytt. “120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS Technology.” In <i>GeMIC 2012</i>, 1–4, 2012.","ama":"Elkhouly M, Glisic S, Ellinger F, Scheytt C. 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology. In: <i>GeMIC 2012</i>. ; 2012:1-4."},"page":"1-4","year":"2012","author":[{"first_name":"Mohamed","full_name":"Elkhouly, Mohamed","last_name":"Elkhouly"},{"first_name":"Srdjan","full_name":"Glisic, Srdjan","last_name":"Glisic"},{"full_name":"Ellinger, Frank","last_name":"Ellinger","first_name":"Frank"},{"first_name":"Christoph","id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt"}],"date_created":"2021-09-14T13:01:28Z","date_updated":"2022-01-06T06:56:20Z","conference":{"end_date":"14.03.2012","start_date":"12.03.2012"},"title":"120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology","type":"conference","publication":"GeMIC 2012","status":"public","abstract":[{"lang":"eng","text":"This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication."}],"user_id":"15931","department":[{"_id":"58"}],"_id":"24416","language":[{"iso":"eng"}]}]