[{"language":[{"iso":"eng"}],"_id":"24343","user_id":"15931","author":[{"id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph"}],"year":"2013","title":"Nano-/Mikroelektronik als Enabler für neue Ansätze","status":"public","date_updated":"2022-01-11T10:42:53Z","place":"HNI, Fürstenallee 11, 33102 Paderborn","date_created":"2021-09-14T09:22:18Z","department":[{"_id":"58"}],"type":"conference","citation":{"chicago":"Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.” In <i>HNI-Forum September </i>. HNI, Fürstenallee 11, 33102 Paderborn, 2013.","short":"C. Scheytt, in: HNI-Forum September , HNI, Fürstenallee 11, 33102 Paderborn, 2013.","ieee":"C. Scheytt, “Nano-/Mikroelektronik als Enabler für neue Ansätze,” 2013.","apa":"Scheytt, C. (2013). Nano-/Mikroelektronik als Enabler für neue Ansätze. <i>HNI-Forum September </i>.","bibtex":"@inproceedings{Scheytt_2013, place={HNI, Fürstenallee 11, 33102 Paderborn}, title={Nano-/Mikroelektronik als Enabler für neue Ansätze}, booktitle={HNI-Forum September }, author={Scheytt, Christoph}, year={2013} }","ama":"Scheytt C. Nano-/Mikroelektronik als Enabler für neue Ansätze. In: <i>HNI-Forum September </i>. ; 2013.","mla":"Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.” <i>HNI-Forum September </i>, 2013."},"publication":"HNI-Forum September ","abstract":[{"text":"50 Jahre Moore‘s Gesetz ? „More Moore“ & „More than Moore“ ? Miniatur-Radar-System ? Silizium-Photonik für schnelle Kommunikation ? Photonischer Winkelsensor","lang":"ger"}]},{"user_id":"15931","language":[{"iso":"eng"}],"_id":"24345","date_updated":"2022-01-11T10:52:51Z","author":[{"full_name":"Scheytt, Christoph","first_name":"Christoph","last_name":"Scheytt","id":"37144"}],"year":"2013","status":"public","title":"RF-MST Cluster Workshop on MEMSWAVE 2013","department":[{"_id":"58"}],"type":"conference","date_created":"2021-09-14T09:22:21Z","related_material":{"link":[{"relation":"confirmation","url":"https://www.enas.fraunhofer.de/content/dam/enas/Dokumente/Deutsch/News_Events/Konferenzen/MEMSWAVE_2013_first.pdf"}]},"citation":{"bibtex":"@inproceedings{Scheytt_2013, title={RF-MST Cluster Workshop on MEMSWAVE 2013}, booktitle={RF-MST Cluster Workshop on MEMSWAVE 2013}, author={Scheytt, Christoph}, year={2013} }","ama":"Scheytt C. RF-MST Cluster Workshop on MEMSWAVE 2013. In: <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>. ; 2013.","mla":"Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>, 2013.","short":"C. Scheytt, in: RF-MST Cluster Workshop on MEMSWAVE 2013, 2013.","chicago":"Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” In <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>, 2013.","ieee":"C. Scheytt, “RF-MST Cluster Workshop on MEMSWAVE 2013,” 2013.","apa":"Scheytt, C. (2013). RF-MST Cluster Workshop on MEMSWAVE 2013. <i>RF-MST Cluster Workshop on MEMSWAVE 2013</i>."},"publication":"RF-MST Cluster Workshop on MEMSWAVE 2013"},{"related_material":{"link":[{"relation":"confirmation","url":"https://www.eumweek.com/archive/eumweek2013/2013/docs/2013_conf_programme.pdf"}]},"citation":{"chicago":"Scheytt, Christoph, Rolf Kraemer, and Ingmar Kallfass. “Strategies for Energy-Efficient 100 Gb/s Baseband.” In <i>W 19 (EuMC \\&#38; EuMIC)</i>. Nürnberg Convention Center, 2013.","short":"C. Scheytt, R. Kraemer, I. Kallfass, in: W 19 (EuMC \\&#38; EuMIC), Nürnberg Convention Center, 2013.","apa":"Scheytt, C., Kraemer, R., &#38; Kallfass, I. (2013). Strategies for Energy-Efficient 100 Gb/s Baseband. <i>W 19 (EuMC \\&#38; EuMIC)</i>.","ieee":"C. Scheytt, R. Kraemer, and I. Kallfass, “Strategies for Energy-Efficient 100 Gb/s Baseband,” 2013.","ama":"Scheytt C, Kraemer R, Kallfass I. Strategies for Energy-Efficient 100 Gb/s Baseband. In: <i>W 19 (EuMC \\&#38; EuMIC)</i>. ; 2013.","bibtex":"@inproceedings{Scheytt_Kraemer_Kallfass_2013, place={Nürnberg Convention Center}, title={Strategies for Energy-Efficient 100 Gb/s Baseband}, booktitle={W 19 (EuMC \\&#38; EuMIC)}, author={Scheytt, Christoph and Kraemer, Rolf and Kallfass, Ingmar}, year={2013} }","mla":"Scheytt, Christoph, et al. “Strategies for Energy-Efficient 100 Gb/s Baseband.” <i>W 19 (EuMC \\&#38; EuMIC)</i>, 2013."},"publication":"W 19 (EuMC \\& EuMIC)","department":[{"_id":"58"}],"type":"conference","place":"Nürnberg Convention Center","date_created":"2021-09-14T09:22:14Z","date_updated":"2022-01-10T11:36:56Z","author":[{"id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph","last_name":"Scheytt"},{"full_name":"Kraemer, Rolf","last_name":"Kraemer","first_name":"Rolf"},{"first_name":"Ingmar","last_name":"Kallfass","full_name":"Kallfass, Ingmar"}],"title":"Strategies for Energy-Efficient 100 Gb/s Baseband","year":"2013","status":"public","user_id":"15931","language":[{"iso":"eng"}],"_id":"24340"},{"_id":"24341","language":[{"iso":"eng"}],"doi":"10.1109/BCTM.2013.6798158","user_id":"15931","status":"public","year":"2013","title":"A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ","author":[{"last_name":"Elkhouly","first_name":"Mohamed","full_name":"Elkhouly, Mohamed"},{"full_name":"Mao, Yanfei","first_name":"Yanfei","last_name":"Mao"},{"last_name":"Meliani","first_name":"Chafik","full_name":"Meliani, Chafik"},{"full_name":"Ellinger, Frank","last_name":"Ellinger","first_name":"Frank"},{"full_name":"Scheytt, Christoph","first_name":"Christoph","last_name":"Scheytt","id":"37144"}],"date_updated":"2022-01-11T09:20:48Z","place":"Bordeaux, France,","date_created":"2021-09-14T09:22:15Z","type":"conference","department":[{"_id":"58"}],"publication":"IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,","citation":{"mla":"Elkhouly, Mohamed, et al. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i> 2013, doi:<a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>.","bibtex":"@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Bordeaux, France,}, title={A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology }, DOI={<a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>}, booktitle={IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013} }","ama":"Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . In: <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>","ieee":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ,” 2013, doi: <a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">10.1109/BCTM.2013.6798158</a>.","apa":"Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013). A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. <a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">https://doi.org/10.1109/BCTM.2013.6798158</a>","chicago":"Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” In <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. Bordeaux, France, 2013. <a href=\"https://doi.org/10.1109/BCTM.2013.6798158\">https://doi.org/10.1109/BCTM.2013.6798158</a>.","short":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING, Bordeaux, France, 2013."},"abstract":[{"lang":"eng","text":"This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm 2 ."}],"related_material":{"link":[{"relation":"confirmation","url":"https://ris.uni-paderborn.de/record/24341"}]}},{"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6666358"}]},"abstract":[{"lang":"eng","text":"Two half-wavelength 122 GHz patch antennas were designed and manufactured by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer. It enables the full integration of the millimeter-wave transceiver circuits and the antennas on a single chip to simplify the packaging procedure at millimeter-wave frequencies, thereby reducing the cost. The two patch antennas are fed by different feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled feed. They exhibit similar performance and offer the flexibility of designing the interconnects (feed lines routing) between the circuits and the antennas within the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency of about 50%."}],"publication":"24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications","citation":{"ieee":"R. Wang <i>et al.</i>, “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications,” 2013, doi: <a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>.","apa":"Wang, R., Kaynak, M., Sun, Y., Borngräber, J., Beer, S., Goettel, B., &#38; Scheytt, C. (2013). 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications. <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>. <a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">https://doi.org/10.1109/PIMRC.2013.6666358</a>","chicago":"Wang, Ruoyu, Mehmet Kaynak, Yaoming Sun, Johannes Borngräber, Stefan Beer, B. Goettel, and Christoph Scheytt. “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” In <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>. Hilton, London Metropole, 2013. <a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">https://doi.org/10.1109/PIMRC.2013.6666358</a>.","short":"R. Wang, M. Kaynak, Y. Sun, J. Borngräber, S. Beer, B. Goettel, C. Scheytt, in: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, Hilton, London Metropole, 2013.","mla":"Wang, Ruoyu, et al. “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>, 2013, doi:<a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>.","bibtex":"@inproceedings{Wang_Kaynak_Sun_Borngräber_Beer_Goettel_Scheytt_2013, place={Hilton, London Metropole}, title={122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications}, DOI={<a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>}, booktitle={24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications}, author={Wang, Ruoyu and Kaynak, Mehmet and Sun, Yaoming and Borngräber, Johannes and Beer, Stefan and Goettel, B. and Scheytt, Christoph}, year={2013} }","ama":"Wang R, Kaynak M, Sun Y, et al. 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications. In: <i>24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/PIMRC.2013.6666358\">10.1109/PIMRC.2013.6666358</a>"},"type":"conference","department":[{"_id":"58"}],"place":"Hilton, London Metropole","date_created":"2021-09-14T09:22:17Z","date_updated":"2022-01-11T10:29:40Z","status":"public","year":"2013","title":"122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications","conference":{"start_date":"08.09.2013","end_date":"11.09.2013"},"author":[{"full_name":"Wang, Ruoyu","first_name":"Ruoyu","last_name":"Wang"},{"first_name":"Mehmet","last_name":"Kaynak","full_name":"Kaynak, Mehmet"},{"last_name":"Sun","first_name":"Yaoming","full_name":"Sun, Yaoming"},{"last_name":"Borngräber","first_name":"Johannes","full_name":"Borngräber, Johannes"},{"first_name":"Stefan","last_name":"Beer","full_name":"Beer, Stefan"},{"full_name":"Goettel, B.","first_name":"B.","last_name":"Goettel"},{"full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph","id":"37144"}],"doi":"10.1109/PIMRC.2013.6666358","user_id":"15931","_id":"24342","language":[{"iso":"eng"}]},{"volume":61,"doi":"10.1109/TMTT.2013.2253792","user_id":"15931","language":[{"iso":"eng"}],"_id":"24347","page":"2185-2194","intvolume":"        61","date_updated":"2022-01-18T10:15:31Z","author":[{"full_name":"Laemmle, Benjamin","first_name":"Benjamin","last_name":"Laemmle"},{"first_name":"Klaus","last_name":"Schmalz","full_name":"Schmalz, Klaus"},{"id":"37144","first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph"},{"first_name":"Robert","last_name":"Weigel","full_name":"Weigel, Robert"},{"full_name":"Kissinger, Dietmar","first_name":"Dietmar","last_name":"Kissinger"}],"status":"public","title":"A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology","year":"2013","department":[{"_id":"58"}],"type":"journal_article","date_created":"2021-09-14T09:22:23Z","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6492143"}]},"abstract":[{"lang":"eng","text":"In this paper, an integrated dielectric sensor with a read-out circuit in an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists of a 500-μm shorted half-wave coplanar-waveguide transmission line in the uppermost metal layer of the silicon process, while the read-out is obtained by reflection coefficient measurement with an integrated reflectometer and a signal source. The reflectometer is verified with a circuit breakout including an integrated dummy sensor. The reflectometer is able to measure the phase of the reflection coefficient from 117 to 134 GHz with a resolution of 0.1° and a standard deviation of 0.082°. The integrated sensor with the reflectometer circuit have been fabricated in a 190-GHz fT SiGe:C BiCMOS technology. It spans an area of 1.4 mm 2 and consumes 75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit board for characterization by immersion into test liquids. The sensor is controlled by a controller board and a personal computer enabling a measurement time of up to 1 ms per frequency point. Functionality of the sensor is demonstrated from 118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol mixtures, showing good correlation between theory and measurement. The sensor shows a standard deviation of the measured phase of 0.220° and is able to detect a difference in ε' r of 0.0125"}],"citation":{"short":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, D. Kissinger, Microwave Theory and Techniques, IEEE Transactions On 61 (2013) 2185–2194.","chicago":"Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Robert Weigel, and Dietmar Kissinger. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 61, no. 5 (2013): 2185–94. <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">https://doi.org/10.1109/TMTT.2013.2253792</a>.","ieee":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, and D. Kissinger, “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 61, no. 5, pp. 2185–2194, 2013, doi: <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>.","apa":"Laemmle, B., Schmalz, K., Scheytt, C., Weigel, R., &#38; Kissinger, D. (2013). A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>61</i>(5), 2185–2194. <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">https://doi.org/10.1109/TMTT.2013.2253792</a>","bibtex":"@article{Laemmle_Schmalz_Scheytt_Weigel_Kissinger_2013, title={A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology}, volume={61}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>}, number={5}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger, Dietmar}, year={2013}, pages={2185–2194} }","ama":"Laemmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D. A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2013;61(5):2185-2194. doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>","mla":"Laemmle, Benjamin, et al. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 61, no. 5, 2013, pp. 2185–94, doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>."},"publication":"Microwave Theory and Techniques, IEEE Transactions on","issue":"5"},{"related_material":{"link":[{"relation":"confirmation","url":"https://docplayer.org/42941783-Wissenschaftsforum-programm-und-einladung-wissenschaftsforum-intelligente-technische-systeme.htm"}]},"publication":"Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut","citation":{"mla":"Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte, Hochintegrierte Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>, 2013.","bibtex":"@inproceedings{Scheytt_Grau_2013, place={Heinz Nixdorf MuseumsForum Paderborn, Germany}, title={Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren}, booktitle={Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut}, author={Scheytt, Christoph and Grau, Günter}, year={2013} }","ama":"Scheytt C, Grau G. Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren. In: <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>. ; 2013.","ieee":"C. Scheytt and G. Grau, “Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren,” 2013.","apa":"Scheytt, C., &#38; Grau, G. (2013). Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren. <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>.","short":"C. Scheytt, G. Grau, in: Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut, Heinz Nixdorf MuseumsForum Paderborn, Germany, 2013.","chicago":"Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte, Hochintegrierte Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” In <i>Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>. Heinz Nixdorf MuseumsForum Paderborn, Germany, 2013."},"type":"conference","department":[{"_id":"58"}],"place":"Heinz Nixdorf MuseumsForum Paderborn, Germany","date_created":"2021-09-14T09:22:24Z","date_updated":"2022-01-18T10:17:43Z","status":"public","year":"2013","title":"Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits- und Drehwinkelsensoren","author":[{"full_name":"Scheytt, Christoph","first_name":"Christoph","last_name":"Scheytt","id":"37144"},{"first_name":"Günter","last_name":"Grau","full_name":"Grau, Günter"}],"user_id":"15931","_id":"24348","language":[{"iso":"eng"}]},{"citation":{"chicago":"Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” In <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>. Karlsruhe, Germany, 2013.","short":"C. Scheytt, in: System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors, Karlsruhe, Germany, 2013.","ieee":"C. Scheytt, “Introduction to Integrated mm‐Wave Sensors,” 2013.","apa":"Scheytt, C. (2013). Introduction to Integrated mm‐Wave Sensors. <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>.","bibtex":"@inproceedings{Scheytt_2013, place={Karlsruhe, Germany}, title={Introduction to Integrated mm‐Wave Sensors}, booktitle={System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave Radar Sensors}, author={Scheytt, Christoph}, year={2013} }","ama":"Scheytt C. Introduction to Integrated mm‐Wave Sensors. In: <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>. ; 2013.","mla":"Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” <i>System, IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>, 2013."},"publication":"System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave Radar Sensors","department":[{"_id":"58"}],"type":"conference","place":"Karlsruhe, Germany","date_created":"2021-09-14T09:22:22Z","date_updated":"2022-01-18T10:14:15Z","author":[{"id":"37144","last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph"}],"year":"2013","title":"Introduction to Integrated mm‐Wave Sensors","status":"public","user_id":"15931","_id":"24346","language":[{"iso":"eng"}]},{"date_created":"2021-09-14T09:22:27Z","type":"journal_article","department":[{"_id":"58"}],"publication":"Microwave Theory and Techniques, IEEE Transactions on","issue":"99","citation":{"apa":"Elkhouly, M., Glisic, S., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013). 220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>PP</i>(99), 1–13. <a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">https://doi.org/10.1109/TMTT.2013.2258032</a>","ieee":"M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, and C. Scheytt, “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. PP, no. 99, pp. 1–13, 2013, doi: <a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>.","chicago":"Elkhouly, Mohamed, Srdjan Glisic, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> PP, no. 99 (2013): 1–13. <a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">https://doi.org/10.1109/TMTT.2013.2258032</a>.","short":"M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On PP (2013) 1–13.","mla":"Elkhouly, Mohamed, et al. “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. PP, no. 99, 2013, pp. 1–13, doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>.","ama":"Elkhouly M, Glisic S, Meliani C, Ellinger F, Scheytt C. 220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2013;PP(99):1-13. doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>","bibtex":"@article{Elkhouly_Glisic_Meliani_Ellinger_Scheytt_2013, title={220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology}, volume={PP}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2013.2258032\">10.1109/TMTT.2013.2258032</a>}, number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Elkhouly, Mohamed and Glisic, Srdjan and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013}, pages={1–13} }"},"abstract":[{"text":"This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication.","lang":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6507360"}]},"page":"1-13","_id":"24350","language":[{"iso":"eng"}],"doi":"10.1109/TMTT.2013.2258032","user_id":"15931","volume":"PP","status":"public","title":"220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology","year":"2013","author":[{"full_name":"Elkhouly, Mohamed","last_name":"Elkhouly","first_name":"Mohamed"},{"full_name":"Glisic, Srdjan","last_name":"Glisic","first_name":"Srdjan"},{"first_name":"Chafik","last_name":"Meliani","full_name":"Meliani, Chafik"},{"last_name":"Ellinger","first_name":"Frank","full_name":"Ellinger, Frank"},{"last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144"}],"date_updated":"2022-01-18T10:25:50Z"},{"date_updated":"2022-01-18T10:29:31Z","intvolume":"        74","status":"public","title":"Analysis and minimization of substrate spurs in fractional-N frequency synthesizers","year":"2013","author":[{"first_name":"Sabbir Ahmed","last_name":"Osmany","full_name":"Osmany, Sabbir Ahmed"},{"last_name":"Herzel","first_name":"Frank","full_name":"Herzel, Frank"},{"id":"37144","first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph"}],"user_id":"15931","doi":"10.1007/s10470-012-0002-x","volume":74,"page":"545-556","language":[{"iso":"eng"}],"_id":"24352","related_material":{"link":[{"relation":"confirmation","url":"https://www.researchgate.net/publication/233895658_Analysis_and_minimization_of_substrate_spurs_in_fractional-N_frequency_synthesizers"}]},"abstract":[{"text":"This paper analyses substrate-related spurious tones in fractional-N phase-\r\nlocked loops with integrated VCOs. Spur positions are calculated and experimentally\r\nverified as a function of the divider ratios of prescaler and programmable divider.\r\nFor an integrated wideband PLL in SiGe BiCMOS technology the spur power levels\r\nare measured and compared with theoretical expectations. The power in these spurs is\r\nminimized by layout techniques shielding the reference input buffer. Spur minimization\r\nby using a variable reference frequency is experimentally demonstrated. Based on this\r\nobservation, a programmable integer-N PLL for driving the fractional-N synthesizer is\r\nsuggested to reduce the worst-case spur level significantly.\r\nIndex Terms — Fractional-N, frequency synthesizers, fractional spurs, substrate\r\nspurs, phase-locked loops (PLLs), phase noise.\r\n","lang":"eng"}],"issue":"3","publication":"Analog Integrated Circuits and Signal Processing","citation":{"ama":"Osmany SA, Herzel F, Scheytt C. Analysis and minimization of substrate spurs in fractional-N frequency synthesizers. <i>Analog Integrated Circuits and Signal Processing</i>. 2013;74(3):545-556. doi:<a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>","bibtex":"@article{Osmany_Herzel_Scheytt_2013, title={Analysis and minimization of substrate spurs in fractional-N frequency synthesizers}, volume={74}, DOI={<a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>}, number={3}, journal={Analog Integrated Circuits and Signal Processing}, author={Osmany, Sabbir Ahmed and Herzel, Frank and Scheytt, Christoph}, year={2013}, pages={545–556} }","mla":"Osmany, Sabbir Ahmed, et al. “Analysis and Minimization of Substrate Spurs in Fractional-N Frequency Synthesizers.” <i>Analog Integrated Circuits and Signal Processing</i>, vol. 74, no. 3, 2013, pp. 545–56, doi:<a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>.","short":"S.A. Osmany, F. Herzel, C. Scheytt, Analog Integrated Circuits and Signal Processing 74 (2013) 545–556.","chicago":"Osmany, Sabbir Ahmed, Frank Herzel, and Christoph Scheytt. “Analysis and Minimization of Substrate Spurs in Fractional-N Frequency Synthesizers.” <i>Analog Integrated Circuits and Signal Processing</i> 74, no. 3 (2013): 545–56. <a href=\"https://doi.org/10.1007/s10470-012-0002-x\">https://doi.org/10.1007/s10470-012-0002-x</a>.","apa":"Osmany, S. A., Herzel, F., &#38; Scheytt, C. (2013). Analysis and minimization of substrate spurs in fractional-N frequency synthesizers. <i>Analog Integrated Circuits and Signal Processing</i>, <i>74</i>(3), 545–556. <a href=\"https://doi.org/10.1007/s10470-012-0002-x\">https://doi.org/10.1007/s10470-012-0002-x</a>","ieee":"S. A. Osmany, F. Herzel, and C. Scheytt, “Analysis and minimization of substrate spurs in fractional-N frequency synthesizers,” <i>Analog Integrated Circuits and Signal Processing</i>, vol. 74, no. 3, pp. 545–556, 2013, doi: <a href=\"https://doi.org/10.1007/s10470-012-0002-x\">10.1007/s10470-012-0002-x</a>."},"type":"journal_article","department":[{"_id":"58"}],"date_created":"2021-09-14T09:22:30Z"},{"publication_identifier":{"eisbn":["978-88-907018-3-2"]},"author":[{"last_name":"Beer","first_name":"Stefan","full_name":"Beer, Stefan"},{"last_name":"Girma","first_name":"Mekdes Gebresilassie","full_name":"Girma, Mekdes Gebresilassie"},{"last_name":"Sun","first_name":"Yaoming","full_name":"Sun, Yaoming"},{"full_name":"Winkler, Wolfgang","last_name":"Winkler","first_name":"Wolfgang"},{"full_name":"Debski, Wojciech","last_name":"Debski","first_name":"Wojciech"},{"full_name":"Paaso, Jaska","first_name":"Jaska","last_name":"Paaso"},{"last_name":"Kunkel","first_name":"Gerhard","full_name":"Kunkel, Gerhard"},{"first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144"},{"full_name":"Hasch, Jürgen","last_name":"Hasch","first_name":"Jürgen"},{"last_name":"Zwick","first_name":"Thomas","full_name":"Zwick, Thomas"}],"status":"public","title":"Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC","year":"2013","date_updated":"2022-01-18T10:23:24Z","_id":"24349","language":[{"iso":"eng"}],"user_id":"15931","citation":{"mla":"Beer, Stefan, et al. “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC.” <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>, 2013.","bibtex":"@inproceedings{Beer_Girma_Sun_Winkler_Debski_Paaso_Kunkel_Scheytt_Hasch_Zwick_2013, place={Gothenburg, Sweden}, title={Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC}, booktitle={7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION}, author={Beer, Stefan and Girma, Mekdes Gebresilassie and Sun, Yaoming and Winkler, Wolfgang and Debski, Wojciech and Paaso, Jaska and Kunkel, Gerhard and Scheytt, Christoph and Hasch, Jürgen and Zwick, Thomas}, year={2013} }","ama":"Beer S, Girma MG, Sun Y, et al. Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. In: <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>. ; 2013.","ieee":"S. Beer <i>et al.</i>, “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC,” 2013.","apa":"Beer, S., Girma, M. G., Sun, Y., Winkler, W., Debski, W., Paaso, J., Kunkel, G., Scheytt, C., Hasch, J., &#38; Zwick, T. (2013). Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>.","chicago":"Beer, Stefan, Mekdes Gebresilassie Girma, Yaoming Sun, Wolfgang Winkler, Wojciech Debski, Jaska Paaso, Gerhard Kunkel, Christoph Scheytt, Jürgen Hasch, and Thomas Zwick. “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC.” In <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION</i>. Gothenburg, Sweden, 2013.","short":"S. Beer, M.G. Girma, Y. Sun, W. Winkler, W. Debski, J. Paaso, G. Kunkel, C. Scheytt, J. Hasch, T. Zwick, in: 7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION, Gothenburg, Sweden, 2013."},"publication":"7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION","abstract":[{"lang":"eng","text":"This paper presents the packaging technology and the integrated antenna design for a miniaturized 122-GHz radar sensor. The package layout and the assembly process are shortly explained. Measurements of the antenna including the flip chip interconnect are presented that have been achieved by replacing the IC with a dummy chip that only contains a through-line. Afterwards, radiation pattern measurements are shown that were recorded using the radar sensor as transmitter. Finally, details of the fully integrated radar sensor are given, together with results of the first Doppler measurements."}],"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6546229","relation":"confirmation"}]},"date_created":"2021-09-14T09:22:26Z","place":"Gothenburg, Sweden","department":[{"_id":"58"}],"type":"conference"},{"date_updated":"2023-01-25T11:03:26Z","title":"80 Gb/s Decision Feedback Equalizer for Intersymbol Interference","status":"public","year":"2013","author":[{"last_name":"Möller","first_name":"Lothar","full_name":"Möller, Lothar"},{"first_name":"Ahmed","last_name":"Awny","full_name":"Awny, Ahmed"},{"full_name":"Junio, Josef","first_name":"Josef","last_name":"Junio"},{"id":"37144","full_name":"Scheytt, Christoph","orcid":"https://orcid.org/0000-0002-5950-6618","first_name":"Christoph","last_name":"Scheytt"},{"id":"538","full_name":"Thiede, Andreas","last_name":"Thiede","first_name":"Andreas"}],"doi":"10.1364/OFC.2013.OW4B.2 ","user_id":"158","language":[{"iso":"eng"}],"_id":"24351","abstract":[{"text":"We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology, enables error-free data recovery of heavily distorted signals transmitted at a bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer reported yet utilizes a novel 1-tap look-ahead architecture.","lang":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6533180"}]},"publication":"Optical Fiber Communication Conference","citation":{"ama":"Möller L, Awny A, Junio J, Scheytt C, Thiede A. 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference. In: <i>Optical Fiber Communication Conference</i>. ; 2013. doi:<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>","bibtex":"@inproceedings{Möller_Awny_Junio_Scheytt_Thiede_2013, place={Anaheim, California United States}, title={80 Gb/s Decision Feedback Equalizer for Intersymbol Interference}, DOI={<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>}, booktitle={Optical Fiber Communication Conference}, author={Möller, Lothar and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas}, year={2013} }","mla":"Möller, Lothar, et al. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” <i>Optical Fiber Communication Conference</i>, 2013, doi:<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>.","short":"L. Möller, A. Awny, J. Junio, C. Scheytt, A. Thiede, in: Optical Fiber Communication Conference, Anaheim, California United States, 2013.","chicago":"Möller, Lothar, Ahmed Awny, Josef Junio, Christoph Scheytt, and Andreas Thiede. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” In <i>Optical Fiber Communication Conference</i>. Anaheim, California United States, 2013. <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">https://doi.org/10.1364/OFC.2013.OW4B.2 </a>.","apa":"Möller, L., Awny, A., Junio, J., Scheytt, C., &#38; Thiede, A. (2013). 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference. <i>Optical Fiber Communication Conference</i>. <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">https://doi.org/10.1364/OFC.2013.OW4B.2 </a>","ieee":"L. Möller, A. Awny, J. Junio, C. Scheytt, and A. Thiede, “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference,” 2013, doi: <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>."},"type":"conference","department":[{"_id":"58"},{"_id":"51"}],"place":"Anaheim, California United States","date_created":"2021-09-14T09:22:28Z"},{"page":"183-186","_id":"24401","language":[{"iso":"eng"}],"user_id":"15931","title":"245 GHz subharmonic receiver in SiGe","status":"public","year":"2012","conference":{"end_date":"30.10.2012","start_date":"29.10.2012"},"publication_identifier":{"eisbn":["978-2-87487-028-6"]},"author":[{"full_name":"Mao, Yanfei","first_name":"Yanfei","last_name":"Mao"},{"id":"37144","last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph"},{"full_name":"Schmalz, Klaus","last_name":"Schmalz","first_name":"Klaus"},{"first_name":"Johannes","last_name":"Borngräber","full_name":"Borngräber, Johannes"}],"date_updated":"2022-01-06T06:56:20Z","place":"Amsterdam, Netherland","date_created":"2021-09-14T12:54:38Z","type":"conference","department":[{"_id":"58"}],"publication":"Microwave Integrated Circuits Conference (EuMIC), 2012 7th European","citation":{"bibtex":"@inproceedings{Mao_Scheytt_Schmalz_Borngräber_2012, place={Amsterdam, Netherland}, title={245 GHz subharmonic receiver in SiGe}, booktitle={Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}, author={Mao, Yanfei and Scheytt, Christoph and Schmalz, Klaus and Borngräber, Johannes}, year={2012}, pages={183–186} }","ama":"Mao Y, Scheytt C, Schmalz K, Borngräber J. 245 GHz subharmonic receiver in SiGe. In: <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>. ; 2012:183-186.","short":"Y. Mao, C. Scheytt, K. Schmalz, J. Borngräber, in: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, Amsterdam, Netherland, 2012, pp. 183–186.","chicago":"Mao, Yanfei, Christoph Scheytt, Klaus Schmalz, and Johannes Borngräber. “245 GHz Subharmonic Receiver in SiGe.” In <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 183–86. Amsterdam, Netherland, 2012.","ieee":"Y. Mao, C. Scheytt, K. Schmalz, and J. Borngräber, “245 GHz subharmonic receiver in SiGe,” in <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 183–186.","mla":"Mao, Yanfei, et al. “245 GHz Subharmonic Receiver in SiGe.” <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 183–86.","apa":"Mao, Y., Scheytt, C., Schmalz, K., &#38; Borngräber, J. (2012). 245 GHz subharmonic receiver in SiGe. <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 183–186."},"abstract":[{"lang":"eng","text":"A  subharmonic  receiver  for  sensing  applications  in  \r\nthe 245 GHz ISM band has been proposed. The receiver consists \r\nof a  single-ended common base LNA, a  60  GHz push-push  VCO \r\nwith 1/32 divider, a transconductance 4th subharmonic mixer and \r\nIF  amplifier.  The  receiver  is  fabricated  in  fT/fmax=300/500  GHz  \r\nSiGe:  C  BiCMOS  technology.  Its  measured  single-ended  gain  is  \r\n21  dB  at  243  GHz  with  tuning  range  of  12  GHz,  and  the  single-\r\nside  band  noise  figure  is  32  dB.  The  input  1-dB  compression  \r\npoint is at -37 dBm. The receiver dissipates a power of 358 mW."}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6483766"}]}},{"type":"conference","department":[{"_id":"58"}],"date_created":"2021-09-14T12:54:39Z","abstract":[{"lang":"eng","text":"The  design  of  a  complex  integrated  transceiver  for  \r\n121–124 GHz is presented. The transceiver consists of the \r\ntransmitter with VCO, power amplifier and power detectors, the \r\nreceiver  with  LNA,  two  mixers  for  quadrature  receive  path  and  \r\nvariable  gain  amplifiers  for  IF-output  and  the  digital  control  \r\ncircuits with SPI-interface. A central part is the  VCO with DAC \r\nand  memory  for  on-chip  storage  of  programmable  frequency  \r\nramps  for  FMCW  radar  applications.  The  oscillator  phase  noise  \r\nis -92 dBc/Hz at 1MHz offset. For calibration of the radar-system \r\non  chip,  a  frequency  measurement  unit  is  integrated.  The  radar  \r\nchip has  power consumption of 380 mW and occupies an area  of \r\n1.8 mm x 1.5 mm. Several examples of frequency ramp \r\ngeneration  are  presented.  The  chip  is  intended  for  integration  \r\ntogether with antenna in a single package."}],"related_material":{"link":[{"url":"978-2-87487-028-6","relation":"confirmation"}]},"publication":"Microwave Integrated Circuits Conference (EuMIC), 2012 7th European","citation":{"chicago":"Debski, Wojciech, Wolfgang Winkler, Yaoming Sun, Miroslav Marinkovic, Johannes Borngräber, and Christoph Scheytt. “120 GHz Radar Mixed-Signal Transceiver.” In <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 191–94, 2012.","short":"W. Debski, W. Winkler, Y. Sun, M. Marinkovic, J. Borngräber, C. Scheytt, in: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, 2012, pp. 191–194.","ieee":"W. Debski, W. Winkler, Y. Sun, M. Marinkovic, J. Borngräber, and C. Scheytt, “120 GHz Radar Mixed-Signal Transceiver,” in <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 191–194.","apa":"Debski, W., Winkler, W., Sun, Y., Marinkovic, M., Borngräber, J., &#38; Scheytt, C. (2012). 120 GHz Radar Mixed-Signal Transceiver. <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 191–194.","bibtex":"@inproceedings{Debski_Winkler_Sun_Marinkovic_Borngräber_Scheytt_2012, title={120 GHz Radar Mixed-Signal Transceiver}, booktitle={Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}, author={Debski, Wojciech and Winkler, Wolfgang and Sun, Yaoming and Marinkovic, Miroslav and Borngräber, Johannes and Scheytt, Christoph}, year={2012}, pages={191–194} }","ama":"Debski W, Winkler W, Sun Y, Marinkovic M, Borngräber J, Scheytt C. 120 GHz Radar Mixed-Signal Transceiver. In: <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>. ; 2012:191-194.","mla":"Debski, Wojciech, et al. “120 GHz Radar Mixed-Signal Transceiver.” <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 191–94."},"user_id":"15931","page":"191-194","_id":"24402","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:56:20Z","status":"public","year":"2012","title":"120 GHz Radar Mixed-Signal Transceiver","conference":{"start_date":"29.10.2012","end_date":"30.10.2012"},"author":[{"first_name":"Wojciech","last_name":"Debski","full_name":"Debski, Wojciech"},{"first_name":"Wolfgang","last_name":"Winkler","full_name":"Winkler, Wolfgang"},{"full_name":"Sun, Yaoming","first_name":"Yaoming","last_name":"Sun"},{"last_name":"Marinkovic","first_name":"Miroslav","full_name":"Marinkovic, Miroslav"},{"full_name":"Borngräber, Johannes","first_name":"Johannes","last_name":"Borngräber"},{"last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144"}],"publication_identifier":{"eisbn":["978-2-87487-028-6"]}},{"publication_identifier":{"eisbn":["978-2-87487-027-9"]},"author":[{"first_name":"Jan","last_name":"Wessel","full_name":"Wessel, Jan"},{"full_name":"Schmalz, Klaus","last_name":"Schmalz","first_name":"Klaus"},{"last_name":"Cahill","first_name":"Brian","full_name":"Cahill, Brian"},{"full_name":"Gastrock, Gunter","first_name":"Gunter","last_name":"Gastrock"},{"last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144"}],"conference":{"end_date":"01.11.2012","start_date":"29.10.2012"},"status":"public","year":"2012","title":"Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries","date_updated":"2022-01-06T06:56:20Z","language":[{"iso":"eng"}],"_id":"24403","user_id":"15931","doi":"10.23919/EuMC.2012.6459231  ","citation":{"short":"J. Wessel, K. Schmalz, B. Cahill, G. Gastrock, C. Scheytt, in: Microwave Conference (EuMC), 2012 42nd European, 2012.","chicago":"Wessel, Jan, Klaus Schmalz, Brian Cahill, Gunter Gastrock, and Christoph Scheytt. “Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries.” In <i>Microwave Conference (EuMC), 2012 42nd European</i>, 2012. <a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">https://doi.org/10.23919/EuMC.2012.6459231  </a>.","ieee":"J. Wessel, K. Schmalz, B. Cahill, G. Gastrock, and C. Scheytt, “Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries,” 2012, doi: <a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">10.23919/EuMC.2012.6459231  </a>.","apa":"Wessel, J., Schmalz, K., Cahill, B., Gastrock, G., &#38; Scheytt, C. (2012). Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries. <i>Microwave Conference (EuMC), 2012 42nd European</i>. <a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">https://doi.org/10.23919/EuMC.2012.6459231  </a>","bibtex":"@inproceedings{Wessel_Schmalz_Cahill_Gastrock_Scheytt_2012, title={Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries}, DOI={<a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">10.23919/EuMC.2012.6459231  </a>}, booktitle={Microwave Conference (EuMC), 2012 42nd European}, author={Wessel, Jan and Schmalz, Klaus and Cahill, Brian and Gastrock, Gunter and Scheytt, Christoph}, year={2012} }","ama":"Wessel J, Schmalz K, Cahill B, Gastrock G, Scheytt C. Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries. In: <i>Microwave Conference (EuMC), 2012 42nd European</i>. ; 2012. doi:<a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">10.23919/EuMC.2012.6459231  </a>","mla":"Wessel, Jan, et al. “Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries.” <i>Microwave Conference (EuMC), 2012 42nd European</i>, 2012, doi:<a href=\"https://doi.org/10.23919/EuMC.2012.6459231  \">10.23919/EuMC.2012.6459231  </a>."},"publication":"Microwave Conference (EuMC), 2012 42nd European","abstract":[{"text":"A  passive  microwave  sensor based on  microstrip  lines \r\nfor  characterizing  cell  cultivation  in  aqueous  compartments  is \r\npresented.  The  proposed  design  methodology  leads  to  a  highly \r\nsensitive biosensor  structure, which is fabricated on  Rogers 3003 \r\nmaterial. It is shown that a sufficiently high sensitivity is achieved \r\nto  monitor  the  cultivation  stadium  of  a  yeast  culture  based  on \r\ndetection  of  permittivity  changes.  The  obtained  measurement \r\nresults  show  good  agreement  with  the  performed  full  3D  EM \r\nsimulations. According to these results the presented biosensor is \r\ncapable  of  characterizing the  stage  of  yeast  cultivation  label-free \r\nand contactless.","lang":"eng"}],"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6459231","relation":"confirmation"}]},"date_created":"2021-09-14T12:54:40Z","department":[{"_id":"58"}],"type":"conference"},{"place":"European Microwave Week 2012, Amsterdam","date_created":"2021-09-14T12:54:43Z","type":"conference","department":[{"_id":"58"}],"publication":"Microwave Integrated Circuits Conference (EuMIC), 2012 7th European","citation":{"chicago":"Ostrovskyy, Philip, Holger Heuermann, Arash Sadeghfam, and Christoph Scheytt. “Performance Estimation of Fully Digital Polar Modulation Driving a 2 GHz Switch-Mode Power Amplifier.” In <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 659–62. European Microwave Week 2012, Amsterdam, 2012. <a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">https://doi.org/10.23919/EuMC.2012.6459419</a>.","short":"P. Ostrovskyy, H. Heuermann, A. Sadeghfam, C. Scheytt, in: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, European Microwave Week 2012, Amsterdam, 2012, pp. 659–662.","apa":"Ostrovskyy, P., Heuermann, H., Sadeghfam, A., &#38; Scheytt, C. (2012). Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier. <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 659–662. <a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">https://doi.org/10.23919/EuMC.2012.6459419</a>","ieee":"P. Ostrovskyy, H. Heuermann, A. Sadeghfam, and C. Scheytt, “Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier,” in <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, Amsterdam, 2012, pp. 659–662, doi: <a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">10.23919/EuMC.2012.6459419</a>.","ama":"Ostrovskyy P, Heuermann H, Sadeghfam A, Scheytt C. Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier. In: <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>. ; 2012:659-662. doi:<a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">10.23919/EuMC.2012.6459419</a>","bibtex":"@inproceedings{Ostrovskyy_Heuermann_Sadeghfam_Scheytt_2012, place={European Microwave Week 2012, Amsterdam}, title={Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier}, DOI={<a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">10.23919/EuMC.2012.6459419</a>}, booktitle={Microwave Integrated Circuits Conference (EuMIC), 2012 7th European}, author={Ostrovskyy, Philip and Heuermann, Holger and Sadeghfam, Arash and Scheytt, Christoph}, year={2012}, pages={659–662} }","mla":"Ostrovskyy, Philip, et al. “Performance Estimation of Fully Digital Polar Modulation Driving a 2 GHz Switch-Mode Power Amplifier.” <i>Microwave Integrated Circuits Conference (EuMIC), 2012 7th European</i>, 2012, pp. 659–62, doi:<a href=\"https://doi.org/10.23919/EuMC.2012.6459419\">10.23919/EuMC.2012.6459419</a>."},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6483886"}]},"abstract":[{"lang":"eng","text":"Abstract— This paper presents a fully digital transmitter \r\narchitecture based on a digital polar modulator (DPM) and \r\nswitch-mode power amplifier (SMPA). A simple method for \r\ncomparison and estimation of different digital modulation \r\ntechniques for SMPA is described. An estimation of the proposed \r\ndigital polar modulator properties was done by means of a \r\n2.1..2.2 GHz  class-F  power  amplifier.  For  a  CDMA  signal  with \r\n9.5 dB  peak-to-average  power  ratio  (PAPR),  the  class-F  based \r\namplifier  module  driven  by  DPM  pulse  train  shows  more  than \r\n1 W output power and more than 10 % of drain efficiency. "}],"page":"659-662","language":[{"iso":"eng"}],"_id":"24405","doi":"10.23919/EuMC.2012.6459419","user_id":"15931","status":"public","year":"2012","title":"Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier","conference":{"start_date":"29.10.2012","location":"Amsterdam","end_date":"01.11.2012"},"publication_identifier":{"eisbn":["978-2-87487-028-6"]},"author":[{"first_name":"Philip","last_name":"Ostrovskyy","full_name":"Ostrovskyy, Philip"},{"full_name":"Heuermann, Holger","first_name":"Holger","last_name":"Heuermann"},{"full_name":"Sadeghfam, Arash","first_name":"Arash","last_name":"Sadeghfam"},{"id":"37144","last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph"}],"date_updated":"2022-01-06T06:56:20Z"},{"date_created":"2021-09-14T12:54:44Z","type":"journal_article","department":[{"_id":"58"}],"publication":"Microwave Theory and Techniques, IEEE Transactions on","issue":"99","citation":{"bibtex":"@article{Mao_Schmalz_Borngräber_Scheytt_2012, title={245-GHz subharmonic receiver in SiGe }, volume={PP}, number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}, year={2012}, pages={183–186} }","ama":"Mao Y, Schmalz K, Borngräber J, Scheytt C. 245-GHz subharmonic receiver in SiGe . <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2012;PP(99):183-186.","mla":"Mao, Yanfei, et al. “245-GHz Subharmonic Receiver in SiGe .” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. PP, no. 99, 2012, pp. 183–86.","short":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On PP (2012) 183–186.","chicago":"Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt. “245-GHz Subharmonic Receiver in SiGe .” <i>Microwave Theory and Techniques, IEEE Transactions On</i> PP, no. 99 (2012): 183–86.","ieee":"Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “245-GHz subharmonic receiver in SiGe ,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. PP, no. 99, pp. 183–186, 2012.","apa":"Mao, Y., Schmalz, K., Borngräber, J., &#38; Scheytt, C. (2012). 245-GHz subharmonic receiver in SiGe . <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>PP</i>(99), 183–186."},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6483766"}]},"abstract":[{"text":"A  subharmonic  receiver  for  sensing  applications  in  \r\nthe 245 GHz ISM band has been proposed. The receiver consists \r\nof a  single-ended common base LNA, a  60  GHz push-push  VCO \r\nwith 1/32 divider, a transconductance 4th subharmonic mixer and \r\nIF  amplifier.  The  receiver  is  fabricated  in  fT/fmax=300/500  GHz  \r\nSiGe:  C  BiCMOS  technology.  Its  measured  single-ended  gain  is  \r\n21  dB  at  243  GHz  with  tuning  range  of  12  GHz,  and  the  single-\r\nside  band  noise  figure  is  32  dB.  The  input  1-dB  compression  \r\npoint is at -37 dBm. The receiver dissipates a power of 358 mW.  \r\nIndex  Terms—  SiGe  technology,  millimeter-wave  circuits,  245  \r\nGHz, CB LNA, SHM, VCO, sub-harmonic receiver.","lang":"eng"}],"page":"183-186","_id":"24406","language":[{"iso":"eng"}],"user_id":"15931","volume":"PP","year":"2012","status":"public","title":"245-GHz subharmonic receiver in SiGe ","conference":{"start_date":"29.10.2012","end_date":"30.10.2012"},"publication_identifier":{"eisbn":["978-2-87487-028-6"]},"author":[{"last_name":"Mao","first_name":"Yanfei","full_name":"Mao, Yanfei"},{"full_name":"Schmalz, Klaus","last_name":"Schmalz","first_name":"Klaus"},{"first_name":"Johannes","last_name":"Borngräber","full_name":"Borngräber, Johannes"},{"last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144"}],"date_updated":"2022-01-06T06:56:20Z"},{"date_created":"2021-09-14T12:54:46Z","type":"journal_article","department":[{"_id":"58"}],"issue":"8","publication":"Microwave Theory and Techniques, IEEE Transactions on","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6227312"}]},"abstract":[{"text":"A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes switching conditions for the amplification stage of the switch-mode power amplifier in comparison to the BDSM architecture. The BDSM is clocked at 5 GHz, while the notch frequency can be tuned in a range of 2.1-2.2 GHz. The modulator achieves 46.6-dB signal-to-noise and distortion ratio in 10-MHz bandwidth for a sine-wave input at 2.2 GHz consuming 330 mW from a 3-V supply. The BDSM was also tested with a single-channel WCDMA signal. It has demonstrated 42.2-dBc adjacent channel leakage ratio at 5-MHz offset and less than 2.1% error vector magnitude over the tuning range.","lang":"eng"}],"language":[{"iso":"eng"}],"doi":"10.1109/TMTT.2012.2203143","year":"2012","title":"A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier","publication_identifier":{"eissn":["1557-9670"]},"author":[{"last_name":"Ostrovskyy","first_name":"Philip","full_name":"Ostrovskyy, Philip"},{"full_name":"Gustat, Hans","last_name":"Gustat","first_name":"Hans"},{"full_name":"Ortmanns, Maurits","first_name":"Maurits","last_name":"Ortmanns"},{"last_name":"Scheytt","first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144"}],"date_updated":"2022-01-06T06:56:20Z","intvolume":"        60","citation":{"chicago":"Ostrovskyy, Philip, Hans Gustat, Maurits Ortmanns, and Christoph Scheytt. “A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 60, no. 8 (2012): 2524–31. <a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">https://doi.org/10.1109/TMTT.2012.2203143</a>.","short":"P. Ostrovskyy, H. Gustat, M. Ortmanns, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On 60 (2012) 2524–2531.","ieee":"P. Ostrovskyy, H. Gustat, M. Ortmanns, and C. Scheytt, “A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 60, no. 8, pp. 2524–2531, 2012, doi: <a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>.","apa":"Ostrovskyy, P., Gustat, H., Ortmanns, M., &#38; Scheytt, C. (2012). A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>60</i>(8), 2524–2531. <a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">https://doi.org/10.1109/TMTT.2012.2203143</a>","bibtex":"@article{Ostrovskyy_Gustat_Ortmanns_Scheytt_2012, title={A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier}, volume={60}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>}, number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Ostrovskyy, Philip and Gustat, Hans and Ortmanns, Maurits and Scheytt, Christoph}, year={2012}, pages={2524–2531} }","ama":"Ostrovskyy P, Gustat H, Ortmanns M, Scheytt C. A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2012;60(8):2524-2531. doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>","mla":"Ostrovskyy, Philip, et al. “A 5-Gb/s 2.1–2.2-GHz Bandpass \\Delta \\Sigma Modulator for Switch-Mode Power Amplifier.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 60, no. 8, 2012, pp. 2524–31, doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2203143\">10.1109/TMTT.2012.2203143</a>."},"page":"2524-2531","_id":"24407","user_id":"15931","volume":60,"status":"public"},{"type":"journal_article","department":[{"_id":"58"}],"date_created":"2021-09-14T12:59:31Z","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6236242","relation":"confirmation"}]},"abstract":[{"lang":"eng","text":"This paper presents a 60-GHz SiGe PA with a 29.2% power-added efficiency (PAE), a peak power of 16.8 dBm, and a peak output 1-dB compression (OP 1dB ) of 14 dBm. Its measured gain is 13.5 dB at 60 GHz with a corresponding 3-dB bandwidth of 47-74 GHz. The PAE is above 25% with a supply voltage from 2.2 to 4 V. A cascode stage has been analyzed and used as the amplifier core. The high PAE is achieved by pushing the upper transistor of the cascode stage to weak avalanche area and correct transistor sizing. The linearity is achieved by optimizing the input matching and emitter degeneration. Safe operation conditions of heterojunction bipolar transistors at dc and high frequencies have been investigated at weak avalanche area. A safe operation boundary for high frequencies is given based on our experimental results and analytical derivations. Large-signal stress tests have shown there is no performance degradation and have proved the validity of this safe operation boundary."}],"issue":"8","publication":"Microwave Theory and Techniques, IEEE Transactions on","doi":"10.1109/TMTT.2012.2202684","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:56:20Z","intvolume":"        60","year":"2012","title":"A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche","publication_identifier":{"eissn":["1557-9670 "]},"author":[{"first_name":"Yaoming","last_name":"Sun","full_name":"Sun, Yaoming"},{"full_name":"Fischer, Gerhard G.","last_name":"Fischer","first_name":"Gerhard G."},{"id":"37144","first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph"}],"citation":{"apa":"Sun, Y., Fischer, G. G., &#38; Scheytt, C. (2012). A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>60</i>(8), 2581–2589. <a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">https://doi.org/10.1109/TMTT.2012.2202684</a>","ieee":"Y. Sun, G. G. Fischer, and C. Scheytt, “A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 60, no. 8, pp. 2581–2589, 2012, doi: <a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">10.1109/TMTT.2012.2202684</a>.","short":"Y. Sun, G.G. Fischer, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On 60 (2012) 2581–2589.","chicago":"Sun, Yaoming, Gerhard G. Fischer, and Christoph Scheytt. “A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 60, no. 8 (2012): 2581–89. <a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">https://doi.org/10.1109/TMTT.2012.2202684</a>.","mla":"Sun, Yaoming, et al. “A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 60, no. 8, 2012, pp. 2581–89, doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">10.1109/TMTT.2012.2202684</a>.","ama":"Sun Y, Fischer GG, Scheytt C. A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2012;60(8):2581-2589. doi:<a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">10.1109/TMTT.2012.2202684</a>","bibtex":"@article{Sun_Fischer_Scheytt_2012, title={A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche}, volume={60}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2012.2202684\">10.1109/TMTT.2012.2202684</a>}, number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Sun, Yaoming and Fischer, Gerhard G. and Scheytt, Christoph}, year={2012}, pages={2581–2589} }"},"user_id":"15931","volume":60,"page":" 2581 - 2589","_id":"24408","status":"public"},{"citation":{"mla":"Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, vol. 59, no. 8, 2012, pp. 461–65, doi:<a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>.","bibtex":"@article{Sedighi_Scheytt_2012, title={Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links}, volume={59}, DOI={<a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>}, number={8}, journal={(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering}, author={Sedighi, Behnam and Scheytt, Christoph}, year={2012}, pages={461–465} }","ama":"Sedighi B, Scheytt C. Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links. <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>. 2012;59(8):461-465. doi:<a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>","ieee":"B. Sedighi and C. Scheytt, “Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links,” <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>, vol. 59, no. 8, pp. 461–465, 2012, doi: <a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>.","apa":"Sedighi, B., &#38; Scheytt, C. (2012). Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links. <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, <i>59</i>(8), 461–465. <a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">https://doi.org/10.1109/TCSII.2012.2204118</a>","short":"B. Sedighi, C. Scheytt, (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering 59 (2012) 461–465.","chicago":"Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i> 59, no. 8 (2012): 461–65. <a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">https://doi.org/10.1109/TCSII.2012.2204118</a>."},"issue":"8","publication":"(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6241407","relation":"confirmation"}]},"abstract":[{"text":"We propose a new circuit for the realization of transimpedance amplifiers (TIAs), targeted at reducing the input-referred noise of the TIA or alternatively increasing the bandwidth, without increasing the power dissipation. An intensive theoretical analysis of the method is given. A prototype chip is fabricated in 0.25- μm SiGe BiCMOS technology. The TIA has a gain of 71 dBΩ , a bandwidth of 20.5 GHz, and an average input-referred current noise density of 18 pA/√Hz . The circuit operates from a 2.5-V supply, and power dissipation is 57 mW.","lang":"eng"}],"date_created":"2021-09-14T12:59:32Z","department":[{"_id":"58"}],"type":"journal_article","author":[{"first_name":"Behnam","last_name":"Sedighi","full_name":"Sedighi, Behnam"},{"id":"37144","first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph"}],"title":"Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links","year":"2012","status":"public","intvolume":"        59","date_updated":"2022-01-06T06:56:20Z","language":[{"iso":"eng"}],"_id":"24409","page":"461-465","volume":59,"user_id":"15931","doi":"10.1109/TCSII.2012.2204118"}]