[{"date_updated":"2022-01-06T06:56:27Z","date_created":"2021-09-16T08:29:18Z","author":[{"first_name":"Behnam","last_name":"Sedighi","full_name":"Sedighi, Behnam"},{"full_name":"Ostrovskyy, Philip","last_name":"Ostrovskyy","first_name":"Philip"},{"id":"37144","full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph"},{"last_name":"Stille","full_name":"Stille, Karl Stephan Christian","first_name":"Karl Stephan Christian"},{"first_name":"Joachim","last_name":"Böcker","full_name":"Böcker, Joachim"}],"title":"Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing","doi":"10.1109/MWSYM.2012.6259502","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6259502"}]},"year":"2012","page":"1 -3","citation":{"ieee":"B. Sedighi, P. Ostrovskyy, C. Scheytt, K. S. C. Stille, and J. Böcker, “Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing,” in <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 2012, pp. 1–3, doi: <a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">10.1109/MWSYM.2012.6259502</a>.","chicago":"Sedighi, Behnam, Philip Ostrovskyy, Christoph Scheytt, Karl Stephan Christian Stille, and Joachim Böcker. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output Swing.” In <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 1–3, 2012. <a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">https://doi.org/10.1109/MWSYM.2012.6259502</a>.","ama":"Sedighi B, Ostrovskyy P, Scheytt C, Stille KSC, Böcker J. Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. In: <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>. ; 2012:1-3. doi:<a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">10.1109/MWSYM.2012.6259502</a>","apa":"Sedighi, B., Ostrovskyy, P., Scheytt, C., Stille, K. S. C., &#38; Böcker, J. (2012). Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 1–3. <a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">https://doi.org/10.1109/MWSYM.2012.6259502</a>","mla":"Sedighi, Behnam, et al. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output Swing.” <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 2012, pp. 1–3, doi:<a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">10.1109/MWSYM.2012.6259502</a>.","bibtex":"@inproceedings{Sedighi_Ostrovskyy_Scheytt_Stille_Böcker_2012, title={Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing}, DOI={<a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">10.1109/MWSYM.2012.6259502</a>}, booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi, Behnam and Ostrovskyy, Philip and Scheytt, Christoph and Stille, Karl Stephan Christian and Böcker, Joachim}, year={2012}, pages={1–3} }","short":"B. Sedighi, P. Ostrovskyy, C. Scheytt, K.S.C. Stille, J. Böcker, in: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3."},"_id":"24546","department":[{"_id":"58"}],"user_id":"15931","language":[{"iso":"eng"}],"publication":"Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International","type":"conference","abstract":[{"text":"this paper investigates low-power design of high-speed and high-swing electronic driver circuits. A method to estimate and optimize the power consumption of such driver ICs is presented. A 20-Gb/s driver circuit is fabricated in 0.25 µm SiGe BiCMOS process and an output swing of 2.5 V pp is measured. The driver consumes 0.75 W from 5 V supply.","lang":"eng"}],"status":"public"},{"type":"conference","publication":"System, MMIC and Package Design for Low-Cost Radar Sensor","status":"public","_id":"24423","user_id":"15931","department":[{"_id":"58"}],"language":[{"iso":"eng"}],"related_material":{"link":[{"url":"http://a.xueshu.baidu.com/usercenter/paper/show?paperid=b58675ad66d82c4a5fe2f649bf89ec5b","relation":"confirmation"}]},"year":"2012","place":"Montreal","citation":{"ama":"Scheytt C, Sun Y. 122 GHz FMCW Radar Transceiver and Components in 0.13µm SiGe BiCMOS Technology. In: <i>System, MMIC and Package Design for Low-Cost Radar Sensor</i>. ; 2012.","chicago":"Scheytt, Christoph, and Yaoming Sun. “122 GHz FMCW Radar Transceiver and Components in 0.13µm SiGe BiCMOS Technology.” In <i>System, MMIC and Package Design for Low-Cost Radar Sensor</i>. Montreal, 2012.","ieee":"C. Scheytt and Y. Sun, “122 GHz FMCW Radar Transceiver and Components in 0.13µm SiGe BiCMOS Technology,” 2012.","mla":"Scheytt, Christoph, and Yaoming Sun. “122 GHz FMCW Radar Transceiver and Components in 0.13µm SiGe BiCMOS Technology.” <i>System, MMIC and Package Design for Low-Cost Radar Sensor</i>, 2012.","short":"C. Scheytt, Y. Sun, in: System, MMIC and Package Design for Low-Cost Radar Sensor, Montreal, 2012.","bibtex":"@inproceedings{Scheytt_Sun_2012, place={Montreal}, title={122 GHz FMCW Radar Transceiver and Components in 0.13µm SiGe BiCMOS Technology}, booktitle={System, MMIC and Package Design for Low-Cost Radar Sensor}, author={Scheytt, Christoph and Sun, Yaoming}, year={2012} }","apa":"Scheytt, C., &#38; Sun, Y. (2012). 122 GHz FMCW Radar Transceiver and Components in 0.13µm SiGe BiCMOS Technology. <i>System, MMIC and Package Design for Low-Cost Radar Sensor</i>."},"date_updated":"2022-01-10T11:36:00Z","date_created":"2021-09-14T13:01:37Z","author":[{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"},{"first_name":"Yaoming","full_name":"Sun, Yaoming","last_name":"Sun"}],"title":"122 GHz FMCW Radar Transceiver and Components in 0.13µm SiGe BiCMOS Technology"},{"citation":{"bibtex":"@inproceedings{Koelnberger_Herzel_Heyer_Lia_Piironen_Telle_Scheytt_2012, title={Spurs and Phase Noise for an integrated 8-12 GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS   }, booktitle={Simulations and Measurements of In-Band}, author={Koelnberger, Andreas and Herzel, Frank and Heyer, Heinz-Volker and Lia, Enrico and Piironen, Petri and Telle, Holger and Scheytt, Christoph}, year={2012} }","mla":"Koelnberger, Andreas, et al. “Spurs and Phase Noise for an Integrated 8-12 GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS   .” <i>Simulations and Measurements of In-Band</i>, 2012.","short":"A. Koelnberger, F. Herzel, H.-V. Heyer, E. Lia, P. Piironen, H. Telle, C. Scheytt, in: Simulations and Measurements of In-Band, 2012.","apa":"Koelnberger, A., Herzel, F., Heyer, H.-V., Lia, E., Piironen, P., Telle, H., &#38; Scheytt, C. (2012). Spurs and Phase Noise for an integrated 8-12 GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS   . <i>Simulations and Measurements of In-Band</i>.","ama":"Koelnberger A, Herzel F, Heyer H-V, et al. Spurs and Phase Noise for an integrated 8-12 GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS   . In: <i>Simulations and Measurements of In-Band</i>. ; 2012.","chicago":"Koelnberger, Andreas, Frank Herzel, Heinz-Volker Heyer, Enrico Lia, Petri Piironen, Holger Telle, and Christoph Scheytt. “Spurs and Phase Noise for an Integrated 8-12 GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS   .” In <i>Simulations and Measurements of In-Band</i>, 2012.","ieee":"A. Koelnberger <i>et al.</i>, “Spurs and Phase Noise for an integrated 8-12 GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS   ,” 2012."},"year":"2012","title":"Spurs and Phase Noise for an integrated 8-12 GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS   ","author":[{"full_name":"Koelnberger, Andreas","last_name":"Koelnberger","first_name":"Andreas"},{"last_name":"Herzel","full_name":"Herzel, Frank","first_name":"Frank"},{"first_name":"Heinz-Volker","last_name":"Heyer","full_name":"Heyer, Heinz-Volker"},{"full_name":"Lia, Enrico","last_name":"Lia","first_name":"Enrico"},{"full_name":"Piironen, Petri","last_name":"Piironen","first_name":"Petri"},{"first_name":"Holger","last_name":"Telle","full_name":"Telle, Holger"},{"first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph","id":"37144"}],"date_created":"2021-09-14T13:01:34Z","date_updated":"2022-01-11T09:24:17Z","status":"public","publication":"Simulations and Measurements of In-Band","type":"conference","language":[{"iso":"eng"}],"department":[{"_id":"58"}],"user_id":"15931","_id":"24421"},{"ipn":"WO/2014/102260","title":"Chip-Antenne, Elektronisches Bauelement und Herstellungsverfahren","ipc":"PCT/EP2013/077951 ","date_updated":"2023-01-31T14:16:12Z","date_created":"2021-09-14T12:53:08Z","author":[{"last_name":"Wang","full_name":"Wang, Ruoyu","first_name":"Ruoyu"},{"first_name":"Yaoming","last_name":"Sun","full_name":"Sun, Yaoming"},{"first_name":"Mehmet","last_name":"Kaynak","full_name":"Kaynak, Mehmet"},{"first_name":"J. Christoph","full_name":"Scheytt, J. Christoph","id":"37144","last_name":"Scheytt","orcid":"https://orcid.org/0000-0002-5950-6618"}],"application_date":"23.12.2013","year":"2012","citation":{"chicago":"Wang, Ruoyu, Yaoming Sun, Mehmet Kaynak, and J. Christoph Scheytt. “Chip-Antenne, Elektronisches Bauelement Und Herstellungsverfahren,” 2012.","ieee":"R. Wang, Y. Sun, M. Kaynak, and J. C. Scheytt, “Chip-Antenne, Elektronisches Bauelement und Herstellungsverfahren.” 2012.","ama":"Wang R, Sun Y, Kaynak M, Scheytt JC. Chip-Antenne, Elektronisches Bauelement und Herstellungsverfahren. Published online 2012.","apa":"Wang, R., Sun, Y., Kaynak, M., &#38; Scheytt, J. C. (2012). <i>Chip-Antenne, Elektronisches Bauelement und Herstellungsverfahren</i>.","bibtex":"@article{Wang_Sun_Kaynak_Scheytt_2012, title={Chip-Antenne, Elektronisches Bauelement und Herstellungsverfahren}, author={Wang, Ruoyu and Sun, Yaoming and Kaynak, Mehmet and Scheytt, J. Christoph}, year={2012} }","mla":"Wang, Ruoyu, et al. <i>Chip-Antenne, Elektronisches Bauelement Und Herstellungsverfahren</i>. 2012.","short":"R. Wang, Y. Sun, M. Kaynak, J.C. Scheytt, (2012)."},"related_material":{"link":[{"relation":"confirmation","url":"https://patentscope.wipo.int/search/de/detail.jsf?docId=WO2014102260"}]},"_id":"24400","publication_date":"03.07.2014 ","department":[{"_id":"58"}],"user_id":"15931","abstract":[{"lang":"ger","text":"Chipantenne (102), umfassend mindestens einen Strahler (114,116), der sich parallel zu einer Hauptoberfläche eines die Chipantenne tragenden Halbleitersubstrats (104) erstreckt, wobei der Strahler auf einer inselartigen Trägerzone (122,124) des Halbleitersubstrats angeordnet ist, die von mindestens einem vollständig mit einem Gas gefüllten Graben (126,128) umgeben ist, welcher das Halbleitersubstrat in dessen gesamter Tiefenerstreckung durchdringt und durch mindestens einen Haltesteg (130,132,134,136) überbrückt ist, welcher eine tragende Verbindung zwischen der Trägerzone und dem übrigen Halbleitersubstrat bildet."},{"text":"The invention relates to a chip antenna (102) comprising at least one emitter (114, 116) which extends parallel to a main surface of a semiconductor substrate (104) supporting the chip antenna. The emitter is arranged on an island-like support zone (122, 124) of the semiconductor substrate, said support zone being surrounded by at least one trench (126, 128) which is completely filled with a gas. The trench passes through the entire depth of the semiconductor substrate and is bridged by at least one retaining web (130, 132, 134, 136) which forms a supporting connection between the support zone and the rest of the semiconductor substrate.","lang":"eng"}],"status":"public","type":"patent"},{"page":"1657-1668","intvolume":"        45","citation":{"chicago":"Osmany, Sabbir A., Frank Herzel, and J. Christoph Scheytt. “An Integrated 0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz Frequency Synthesizer for Software-Defined Radio Applications.” <i>IEEE Journal of Solid-State Circuits</i> 45, no. 9 (2010): 1657–68. <a href=\"https://doi.org/10.1109/JSSC.2010.2051476\">https://doi.org/10.1109/JSSC.2010.2051476</a>.","ieee":"S. A. Osmany, F. Herzel, and J. C. Scheytt, “An integrated 0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz frequency synthesizer for software-defined radio applications,” <i>IEEE Journal of Solid-State Circuits</i>, vol. 45, no. 9, pp. 1657–1668, 2010, doi: <a href=\"https://doi.org/10.1109/JSSC.2010.2051476\">10.1109/JSSC.2010.2051476</a>.","ama":"Osmany SA, Herzel F, Scheytt JC. An integrated 0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz frequency synthesizer for software-defined radio applications. <i>IEEE Journal of Solid-State Circuits</i>. 2010;45(9):1657-1668. doi:<a href=\"https://doi.org/10.1109/JSSC.2010.2051476\">10.1109/JSSC.2010.2051476</a>","apa":"Osmany, S. A., Herzel, F., &#38; Scheytt, J. C. (2010). An integrated 0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz frequency synthesizer for software-defined radio applications. <i>IEEE Journal of Solid-State Circuits</i>, <i>45</i>(9), 1657–1668. <a href=\"https://doi.org/10.1109/JSSC.2010.2051476\">https://doi.org/10.1109/JSSC.2010.2051476</a>","short":"S.A. Osmany, F. Herzel, J.C. Scheytt, IEEE Journal of Solid-State Circuits 45 (2010) 1657–1668.","mla":"Osmany, Sabbir A., et al. “An Integrated 0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz Frequency Synthesizer for Software-Defined Radio Applications.” <i>IEEE Journal of Solid-State Circuits</i>, vol. 45, no. 9, 2010, pp. 1657–68, doi:<a href=\"https://doi.org/10.1109/JSSC.2010.2051476\">10.1109/JSSC.2010.2051476</a>.","bibtex":"@article{Osmany_Herzel_Scheytt_2010, title={An integrated 0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz frequency synthesizer for software-defined radio applications}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/JSSC.2010.2051476\">10.1109/JSSC.2010.2051476</a>}, number={9}, journal={IEEE Journal of Solid-State Circuits}, author={Osmany, Sabbir A. and Herzel, Frank and Scheytt, J. Christoph}, year={2010}, pages={1657–1668} }"},"year":"2010","issue":"9","doi":"10.1109/JSSC.2010.2051476","title":"An integrated 0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz frequency synthesizer for software-defined radio applications","volume":45,"date_created":"2023-06-26T10:26:17Z","author":[{"full_name":"Osmany, Sabbir A.","last_name":"Osmany","first_name":"Sabbir A."},{"last_name":"Herzel","full_name":"Herzel, Frank","first_name":"Frank"},{"full_name":"Scheytt, J. Christoph","id":"37144","last_name":"Scheytt","orcid":"0000-0002-5950-6618 ","first_name":"J. Christoph"}],"date_updated":"2023-06-26T10:26:31Z","status":"public","publication":"IEEE Journal of Solid-State Circuits","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"58"}],"user_id":"14931","_id":"45774"},{"type":"journal_article","publication":"IEEE Transactions on Circuits and Systems I: Regular Papers","status":"public","user_id":"14931","department":[{"_id":"58"}],"_id":"45772","language":[{"iso":"eng"}],"issue":"8","citation":{"ama":"Herzel F, Osmany SA, Scheytt JC. Analytical Phase-Noise Modeling and Charge Pump Optimization for Fractional-$N$ PLLs. <i>IEEE Transactions on Circuits and Systems I: Regular Papers</i>. 2010;57(8):1914-1924.","ieee":"F. Herzel, S. A. Osmany, and J. C. Scheytt, “Analytical Phase-Noise Modeling and Charge Pump Optimization for Fractional-$N$ PLLs,” <i>IEEE Transactions on Circuits and Systems I: Regular Papers</i>, vol. 57, no. 8, pp. 1914–1924, 2010.","chicago":"Herzel, Frank, Sabbir A.  Osmany, and J. Christoph Scheytt. “Analytical Phase-Noise Modeling and Charge Pump Optimization for Fractional-$N$ PLLs.” <i>IEEE Transactions on Circuits and Systems I: Regular Papers</i> 57, no. 8 (2010): 1914–24.","mla":"Herzel, Frank, et al. “Analytical Phase-Noise Modeling and Charge Pump Optimization for Fractional-$N$ PLLs.” <i>IEEE Transactions on Circuits and Systems I: Regular Papers</i>, vol. 57, no. 8, 2010, pp. 1914–24.","bibtex":"@article{Herzel_Osmany_Scheytt_2010, title={Analytical Phase-Noise Modeling and Charge Pump Optimization for Fractional-$N$ PLLs}, volume={57}, number={8}, journal={IEEE Transactions on Circuits and Systems I: Regular Papers}, author={Herzel, Frank and Osmany, Sabbir A.  and Scheytt, J. Christoph}, year={2010}, pages={1914–1924} }","short":"F. Herzel, S.A. Osmany, J.C. Scheytt, IEEE Transactions on Circuits and Systems I: Regular Papers 57 (2010) 1914–1924.","apa":"Herzel, F., Osmany, S. A., &#38; Scheytt, J. C. (2010). Analytical Phase-Noise Modeling and Charge Pump Optimization for Fractional-$N$ PLLs. <i>IEEE Transactions on Circuits and Systems I: Regular Papers</i>, <i>57</i>(8), 1914–1924."},"page":"1914-1924","intvolume":"        57","year":"2010","author":[{"first_name":"Frank","last_name":"Herzel","full_name":"Herzel, Frank"},{"first_name":"Sabbir A. ","last_name":"Osmany","full_name":"Osmany, Sabbir A. "},{"orcid":"0000-0002-5950-6618 ","last_name":"Scheytt","id":"37144","full_name":"Scheytt, J. Christoph","first_name":"J. Christoph"}],"date_created":"2023-06-26T10:20:42Z","volume":57,"date_updated":"2023-06-26T10:20:48Z","title":"Analytical Phase-Noise Modeling and Charge Pump Optimization for Fractional-$N$ PLLs"}]