---
_id: '25117'
author:
- first_name: Bastian
full_name: Koppelmann, Bastian
id: '25260'
last_name: Koppelmann
- first_name: Bernd
full_name: Messidat, Bernd
last_name: Messidat
- first_name: Markus
full_name: Becker, Markus
last_name: Becker
- first_name: Christoph
full_name: Kuznik, Christoph
last_name: Kuznik
- first_name: Wolfgang
full_name: Müller, Wolfgang
id: '16243'
last_name: Müller
- first_name: J. Christoph
full_name: Scheytt, J. Christoph
id: '37144'
last_name: Scheytt
orcid: https://orcid.org/0000-0002-5950-6618
citation:
ama: Koppelmann B, Messidat B, Becker M, Kuznik C, Müller W, Scheytt JC. Fast and
Open Virtual Platforms for TriCore-based SoCs Using QEMU. Design and Verification
Conference (DVCON EUROPE). Published online 2014.
apa: Koppelmann, B., Messidat, B., Becker, M., Kuznik, C., Müller, W., & Scheytt,
J. C. (2014). Fast and Open Virtual Platforms for TriCore-based SoCs Using QEMU.
Design and Verification Conference (DVCON EUROPE).
bibtex: '@article{Koppelmann_Messidat_Becker_Kuznik_Müller_Scheytt_2014, title={Fast
and Open Virtual Platforms for TriCore-based SoCs Using QEMU}, journal={Design
and Verification Conference (DVCON EUROPE)}, author={Koppelmann, Bastian and Messidat,
Bernd and Becker, Markus and Kuznik, Christoph and Müller, Wolfgang and Scheytt,
J. Christoph}, year={2014} }'
chicago: Koppelmann, Bastian, Bernd Messidat, Markus Becker, Christoph Kuznik, Wolfgang
Müller, and J. Christoph Scheytt. “Fast and Open Virtual Platforms for TriCore-Based
SoCs Using QEMU.” Design and Verification Conference (DVCON EUROPE), 2014.
ieee: B. Koppelmann, B. Messidat, M. Becker, C. Kuznik, W. Müller, and J. C. Scheytt,
“Fast and Open Virtual Platforms for TriCore-based SoCs Using QEMU,” Design
and Verification Conference (DVCON EUROPE), 2014.
mla: Koppelmann, Bastian, et al. “Fast and Open Virtual Platforms for TriCore-Based
SoCs Using QEMU.” Design and Verification Conference (DVCON EUROPE), 2014.
short: B. Koppelmann, B. Messidat, M. Becker, C. Kuznik, W. Müller, J.C. Scheytt,
Design and Verification Conference (DVCON EUROPE) (2014).
date_created: 2021-09-29T10:47:35Z
date_updated: 2025-02-26T14:44:48Z
department:
- _id: '672'
language:
- iso: eng
publication: Design and Verification Conference (DVCON EUROPE)
status: public
title: Fast and Open Virtual Platforms for TriCore-based SoCs Using QEMU
type: journal_article
user_id: '5786'
year: '2014'
...
---
_id: '24356'
abstract:
- lang: eng
text: A fully integrated six-port receiver front-end at 120 GHz center frequency
including a low-noise-amplifier, a passive six-port network, a VCO, and four direct
converters is presented in this publication. The overall architecture of the designed
six-port receiver is analyzed and fundamental theory of the receiver given. The
design of the six-port building blocks is described and measurement results are
presented. All circuits have been fabricated in a 0.13μm 300-GHz f T SiGe BiCMOS
technology. The fully integrated receiver consumes 85.9 rnA from a 3.3-V supply
and occupies an area of 1.03mm 2 . The receiver includes a VCO with a center frequency
of 117.15 GHz, a tuning range of 2.7 GHz, and a phase noise of -86 dBc/Hz at 1
MHz offset. The LNA shows a gain of 12 dB, a 3-dB bandwidth of 30 GHz at a power
consumption of 9.2 rnA. The six-port core has a conversion gain of 3.6 dB, a P
1dB of -12 dBm, and a power consumption of 28 rnA. The overall receiver shows
a conversion gain of 2.4 dB at 120 GHz and P 1dB of -17 dBm.
author:
- first_name: Benjamin
full_name: Laemmle, Benjamin
last_name: Laemmle
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Robert
full_name: Weigel, Robert
last_name: Weigel
- first_name: Alexander
full_name: Koelpin, Alexander
last_name: Koelpin
- first_name: Dietmar
full_name: Kissinger, Dietmar
last_name: Kissinger
citation:
ama: 'Laemmle B, Schmalz K, Borngräber J, et al. A fully integrated 120-GHz six-port
receiver front-end in a 130-nm SiGe BiCMOS technology. In: Silicon Monolithic
Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On.
; 2013. doi:10.1109/SiRF.2013.6489455'
apa: Laemmle, B., Schmalz, K., Borngräber, J., Scheytt, C., Weigel, R., Koelpin,
A., & Kissinger, D. (2013). A fully integrated 120-GHz six-port receiver front-end
in a 130-nm SiGe BiCMOS technology. Silicon Monolithic Integrated Circuits
in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On. https://doi.org/10.1109/SiRF.2013.6489455
bibtex: '@inproceedings{Laemmle_Schmalz_Borngräber_Scheytt_Weigel_Koelpin_Kissinger_2013,
title={A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe
BiCMOS technology}, DOI={10.1109/SiRF.2013.6489455},
booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
13th Topical Meeting on}, author={Laemmle, Benjamin and Schmalz, Klaus and Borngräber,
Johannes and Scheytt, Christoph and Weigel, Robert and Koelpin, Alexander and
Kissinger, Dietmar}, year={2013} }'
chicago: Laemmle, Benjamin, Klaus Schmalz, Johannes Borngräber, Christoph Scheytt,
Robert Weigel, Alexander Koelpin, and Dietmar Kissinger. “A Fully Integrated 120-GHz
Six-Port Receiver Front-End in a 130-Nm SiGe BiCMOS Technology.” In Silicon
Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting
On, 2013. https://doi.org/10.1109/SiRF.2013.6489455.
ieee: 'B. Laemmle et al., “A fully integrated 120-GHz six-port receiver front-end
in a 130-nm SiGe BiCMOS technology,” 2013, doi: 10.1109/SiRF.2013.6489455.'
mla: Laemmle, Benjamin, et al. “A Fully Integrated 120-GHz Six-Port Receiver Front-End
in a 130-Nm SiGe BiCMOS Technology.” Silicon Monolithic Integrated Circuits
in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013, doi:10.1109/SiRF.2013.6489455.
short: 'B. Laemmle, K. Schmalz, J. Borngräber, C. Scheytt, R. Weigel, A. Koelpin,
D. Kissinger, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
2013 IEEE 13th Topical Meeting On, 2013.'
conference:
end_date: 2013.01.23
start_date: 2013.01.21
date_created: 2021-09-14T09:22:35Z
date_updated: 2022-02-17T09:02:41Z
department:
- _id: '58'
doi: 10.1109/SiRF.2013.6489455
language:
- iso: eng
publication: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
13th Topical Meeting on
publication_identifier:
eisbn:
- 978-1-4673-1553-1
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6489455
status: public
title: A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS
technology
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24355'
abstract:
- lang: eng
text: Impulse-radio ultra-wideband systems (IR-UWB) provide short-range wireless
communication and precise localization simultaneously. Especially non-coherent
IR-UWB reduces the system complexity which enables the design of low-power receivers.
This paper presents an integrating digitizer which integrates rectified baseband
pulses of an IR-UWB signal and provides the digitized data to the digital baseband
of the receiver. The integrator is composed of two time-interleaved (TI) operational
amplifiers with capacitive feedback. With this structure, the integrator can be
periodically reset without introducing a dead time between two integration periods.
The analog-to-digital conversion is performed by a 6 bit 62.4 MS/s successive
approximation register analog-to-digital converter (SAR ADC). The integrating
digitizer chip is realized in a 250 nm SiGe:C BiCMOS technology from IHP.
author:
- first_name: Johannes
full_name: Digel, Johannes
last_name: Digel
- first_name: Michelangelo
full_name: Masini, Michelangelo
last_name: Masini
- first_name: Markus
full_name: Grözing, Markus
last_name: Grözing
- first_name: Manfred
full_name: Berroth, Manfred
last_name: Berroth
- first_name: Gunter
full_name: Fischer, Gunter
last_name: Fischer
- first_name: Sonom
full_name: Olonbayar, Sonom
last_name: Olonbayar
- first_name: Hans
full_name: Gustat, Hans
last_name: Gustat
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Digel J, Masini M, Grözing M, et al. Integrator and digitizer for a non-coherent
IR-UWB receiver. In: Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
2013 IEEE 13th Topical Meeting On. ; 2013:93-95. doi:10.1109/SiRF.2013.6489443'
apa: Digel, J., Masini, M., Grözing, M., Berroth, M., Fischer, G., Olonbayar, S.,
Gustat, H., & Scheytt, C. (2013). Integrator and digitizer for a non-coherent
IR-UWB receiver. Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
2013 IEEE 13th Topical Meeting On, 93–95. https://doi.org/10.1109/SiRF.2013.6489443
bibtex: '@inproceedings{Digel_Masini_Grözing_Berroth_Fischer_Olonbayar_Gustat_Scheytt_2013,
title={Integrator and digitizer for a non-coherent IR-UWB receiver}, DOI={10.1109/SiRF.2013.6489443},
booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
13th Topical Meeting on}, author={Digel, Johannes and Masini, Michelangelo and
Grözing, Markus and Berroth, Manfred and Fischer, Gunter and Olonbayar, Sonom
and Gustat, Hans and Scheytt, Christoph}, year={2013}, pages={93–95} }'
chicago: Digel, Johannes, Michelangelo Masini, Markus Grözing, Manfred Berroth,
Gunter Fischer, Sonom Olonbayar, Hans Gustat, and Christoph Scheytt. “Integrator
and Digitizer for a Non-Coherent IR-UWB Receiver.” In Silicon Monolithic Integrated
Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 93–95, 2013.
https://doi.org/10.1109/SiRF.2013.6489443.
ieee: 'J. Digel et al., “Integrator and digitizer for a non-coherent IR-UWB
receiver,” in Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
2013 IEEE 13th Topical Meeting on, 2013, pp. 93–95, doi: 10.1109/SiRF.2013.6489443.'
mla: Digel, Johannes, et al. “Integrator and Digitizer for a Non-Coherent IR-UWB
Receiver.” Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013
IEEE 13th Topical Meeting On, 2013, pp. 93–95, doi:10.1109/SiRF.2013.6489443.
short: 'J. Digel, M. Masini, M. Grözing, M. Berroth, G. Fischer, S. Olonbayar, H.
Gustat, C. Scheytt, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
2013 IEEE 13th Topical Meeting On, 2013, pp. 93–95.'
conference:
end_date: 2013.01.23
start_date: 2013.01.21
date_created: 2021-09-14T09:22:33Z
date_updated: 2022-02-17T09:01:16Z
department:
- _id: '58'
doi: 10.1109/SiRF.2013.6489443
language:
- iso: eng
page: 93-95
publication: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
13th Topical Meeting on
publication_identifier:
eisbn:
- 978-1-4673-1553-1
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6489443
status: public
title: Integrator and digitizer for a non-coherent IR-UWB receiver
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24353'
abstract:
- lang: eng
text: This paper presents an integrated mixed-signal 120GHz FMCW/CW radar chipset
in a 0.13μm SiGe BiCMOS technology. It features on-chip MMW built-in-self-test
(BIST) circuits, a harmonic transceiver, software linearization (SWL) circuits
and a digital interface. This chipset has been tested in a low-cost package, where
the antennas are integrated. Above 100GHz, our transceiver has achieved state-ofthe-art
integration level and receiver linearity, and DC power consumption.
author:
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Miroslav
full_name: Marinkovic, Miroslav
last_name: Marinkovic
- first_name: Gunter
full_name: Fischer, Gunter
last_name: Fischer
- first_name: Wolfgang
full_name: Winkler, Wolfgang
last_name: Winkler
- first_name: Wojciech
full_name: Debski, Wojciech
last_name: Debski
- first_name: Stefan
full_name: Beer, Stefan
last_name: Beer
- first_name: Thomas
full_name: Zwick, Thomas
last_name: Zwick
- first_name: Mekdes Gebresilassie
full_name: Girma, Mekdes Gebresilassie
last_name: Girma
- first_name: Jürgen
full_name: Hasch, Jürgen
last_name: Hasch
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Sun Y, Marinkovic M, Fischer G, et al. A low-cost miniature 120GHz SiP FMCW/CW
radar sensor with software linearization. In: Solid-State Circuits Conference
Digest of Technical Papers (ISSCC), 2013 IEEE International. ; 2013:148-149.
doi:10.1109/ISSCC.2013.6487676'
apa: Sun, Y., Marinkovic, M., Fischer, G., Winkler, W., Debski, W., Beer, S., Zwick,
T., Girma, M. G., Hasch, J., & Scheytt, C. (2013). A low-cost miniature 120GHz
SiP FMCW/CW radar sensor with software linearization. Solid-State Circuits
Conference Digest of Technical Papers (ISSCC), 2013 IEEE International, 148–149.
https://doi.org/10.1109/ISSCC.2013.6487676
bibtex: '@inproceedings{Sun_Marinkovic_Fischer_Winkler_Debski_Beer_Zwick_Girma_Hasch_Scheytt_2013,
title={A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization},
DOI={10.1109/ISSCC.2013.6487676},
booktitle={Solid-State Circuits Conference Digest of Technical Papers (ISSCC),
2013 IEEE International}, author={Sun, Yaoming and Marinkovic, Miroslav and Fischer,
Gunter and Winkler, Wolfgang and Debski, Wojciech and Beer, Stefan and Zwick,
Thomas and Girma, Mekdes Gebresilassie and Hasch, Jürgen and Scheytt, Christoph},
year={2013}, pages={148–149} }'
chicago: Sun, Yaoming, Miroslav Marinkovic, Gunter Fischer, Wolfgang Winkler, Wojciech
Debski, Stefan Beer, Thomas Zwick, Mekdes Gebresilassie Girma, Jürgen Hasch, and
Christoph Scheytt. “A Low-Cost Miniature 120GHz SiP FMCW/CW Radar Sensor with
Software Linearization.” In Solid-State Circuits Conference Digest of Technical
Papers (ISSCC), 2013 IEEE International, 148–49, 2013. https://doi.org/10.1109/ISSCC.2013.6487676.
ieee: 'Y. Sun et al., “A low-cost miniature 120GHz SiP FMCW/CW radar sensor
with software linearization,” in Solid-State Circuits Conference Digest of
Technical Papers (ISSCC), 2013 IEEE International, 2013, pp. 148–149, doi:
10.1109/ISSCC.2013.6487676.'
mla: Sun, Yaoming, et al. “A Low-Cost Miniature 120GHz SiP FMCW/CW Radar Sensor
with Software Linearization.” Solid-State Circuits Conference Digest of Technical
Papers (ISSCC), 2013 IEEE International, 2013, pp. 148–49, doi:10.1109/ISSCC.2013.6487676.
short: 'Y. Sun, M. Marinkovic, G. Fischer, W. Winkler, W. Debski, S. Beer, T. Zwick,
M.G. Girma, J. Hasch, C. Scheytt, in: Solid-State Circuits Conference Digest of
Technical Papers (ISSCC), 2013 IEEE International, 2013, pp. 148–149.'
conference:
end_date: 2013.02.21
start_date: 2013.02.17
date_created: 2021-09-14T09:22:31Z
date_updated: 2022-02-17T08:57:43Z
department:
- _id: '58'
doi: 10.1109/ISSCC.2013.6487676
language:
- iso: eng
page: 148-149
publication: Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013
IEEE International
publication_identifier:
eisbn:
- 978-1-4673-4516-3
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6487676
status: public
title: A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24357'
abstract:
- lang: eng
text: Complex integrated 122 and 245 GHz SiGe BiCMOS transceiver ICs as well as
an efficient broadband on-chip antenna are presented. The ICs target radar and
sensing applications for the ISM bands at 122 and 245 GHz. Due to high level of
integration and basic mm-wave self-testing production as well as test cost are
dramatically reduced. Furthermore a compact and efficient on-chip antenna allows
for chip-on-board mounting without RF interfaces.
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
- first_name: Wojciech
full_name: Debski, Wojciech
last_name: Debski
- first_name: Wolfgang
full_name: Winkler, Wolfgang
last_name: Winkler
citation:
ama: 'Scheytt C, Sun Y, Schmalz K, et al. Towards mm-wave System-On-Chip with integrated
antennas for low-cost 122 and 245 GHz radar sensors. In: Silicon Monolithic
Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On.
; 2013:246-248. doi:10.1109/SiRF.2013.6489494'
apa: Scheytt, C., Sun, Y., Schmalz, K., Mao, Y., Wang, R., Debski, W., & Winkler,
W. (2013). Towards mm-wave System-On-Chip with integrated antennas for low-cost
122 and 245 GHz radar sensors. Silicon Monolithic Integrated Circuits in RF
Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 246–248. https://doi.org/10.1109/SiRF.2013.6489494
bibtex: '@inproceedings{Scheytt_Sun_Schmalz_Mao_Wang_Debski_Winkler_2013, place={Austin
TX}, title={Towards mm-wave System-On-Chip with integrated antennas for low-cost
122 and 245 GHz radar sensors}, DOI={10.1109/SiRF.2013.6489494},
booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
13th Topical Meeting on}, author={Scheytt, Christoph and Sun, Yaoming and Schmalz,
Klaus and Mao, Yanfei and Wang, Ruoyu and Debski, Wojciech and Winkler, Wolfgang},
year={2013}, pages={246–248} }'
chicago: Scheytt, Christoph, Yaoming Sun, Klaus Schmalz, Yanfei Mao, Ruoyu Wang,
Wojciech Debski, and Wolfgang Winkler. “Towards Mm-Wave System-On-Chip with Integrated
Antennas for Low-Cost 122 and 245 GHz Radar Sensors.” In Silicon Monolithic
Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On,
246–48. Austin TX, 2013. https://doi.org/10.1109/SiRF.2013.6489494.
ieee: 'C. Scheytt et al., “Towards mm-wave System-On-Chip with integrated
antennas for low-cost 122 and 245 GHz radar sensors,” in Silicon Monolithic
Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on,
2013, pp. 246–248, doi: 10.1109/SiRF.2013.6489494.'
mla: Scheytt, Christoph, et al. “Towards Mm-Wave System-On-Chip with Integrated
Antennas for Low-Cost 122 and 245 GHz Radar Sensors.” Silicon Monolithic Integrated
Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013, pp.
246–48, doi:10.1109/SiRF.2013.6489494.
short: 'C. Scheytt, Y. Sun, K. Schmalz, Y. Mao, R. Wang, W. Debski, W. Winkler,
in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th
Topical Meeting On, Austin TX, 2013, pp. 246–248.'
conference:
end_date: 2013.01.23
start_date: 2013.01.21
date_created: 2021-09-14T09:22:36Z
date_updated: 2022-02-17T09:03:54Z
department:
- _id: '58'
doi: 10.1109/SiRF.2013.6489494
language:
- iso: eng
page: 246-248
place: Austin TX
publication: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
13th Topical Meeting on
publication_identifier:
eisbn:
- 978-1-4673-1553-1
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6489494
status: public
title: Towards mm-wave System-On-Chip with integrated antennas for low-cost 122 and
245 GHz radar sensors
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24354'
abstract:
- lang: eng
text: In this paper, a 6-bit true modular programmable frequency divider with division
ratios ranging from 64 to 127 is reported. It is composed of a divider chain of
6 divide-by-2/3 cells, and ECL stages that are introduced as synchronization circuits
for programming inputs. The synchronization circuits have CMOS input for compatibility
with programming circuits. The stand-alone divider chain is functional up to an
input clock frequency of 49 GHz. The combination of the divider chain with synchronization
circuits is functional up to 44 GHz. The 6 stage divider draws 34 mA current from
a 2.7 V supply. The synchronization circuits draw 30 mA from a 3 V supply. The
circuit is fabricated in a 0.13 μm SiGe BiCMOS technology, and is well suited
for millimeter-wave phase-locked loop (PLL) circuits which require fine frequency
resolution.
author:
- first_name: Arzu
full_name: Ergintav, Arzu
last_name: Ergintav
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Yasar
full_name: Gürbüz, Yasar
last_name: Gürbüz
citation:
ama: 'Ergintav A, Sun Y, Scheytt C, Gürbüz Y. 49 GHz 6-bit programmable divider
in SiGe BiCMOS. In: Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
2013 IEEE 13th Topical Meeting On. ; 2013. doi:10.1109/SiRF.2013.6489451'
apa: Ergintav, A., Sun, Y., Scheytt, C., & Gürbüz, Y. (2013). 49 GHz 6-bit programmable
divider in SiGe BiCMOS. Silicon Monolithic Integrated Circuits in RF Systems
(SiRF), 2013 IEEE 13th Topical Meeting On. https://doi.org/10.1109/SiRF.2013.6489451
bibtex: '@inproceedings{Ergintav_Sun_Scheytt_Gürbüz_2013, title={49 GHz 6-bit programmable
divider in SiGe BiCMOS}, DOI={10.1109/SiRF.2013.6489451},
booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
13th Topical Meeting on}, author={Ergintav, Arzu and Sun, Yaoming and Scheytt,
Christoph and Gürbüz, Yasar}, year={2013} }'
chicago: Ergintav, Arzu, Yaoming Sun, Christoph Scheytt, and Yasar Gürbüz. “49 GHz
6-Bit Programmable Divider in SiGe BiCMOS.” In Silicon Monolithic Integrated
Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013. https://doi.org/10.1109/SiRF.2013.6489451.
ieee: 'A. Ergintav, Y. Sun, C. Scheytt, and Y. Gürbüz, “49 GHz 6-bit programmable
divider in SiGe BiCMOS,” 2013, doi: 10.1109/SiRF.2013.6489451.'
mla: Ergintav, Arzu, et al. “49 GHz 6-Bit Programmable Divider in SiGe BiCMOS.”
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th
Topical Meeting On, 2013, doi:10.1109/SiRF.2013.6489451.
short: 'A. Ergintav, Y. Sun, C. Scheytt, Y. Gürbüz, in: Silicon Monolithic Integrated
Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013.'
conference:
end_date: 2013.01.23
start_date: 2013.01.21
date_created: 2021-09-14T09:22:32Z
date_updated: 2022-02-17T08:59:40Z
department:
- _id: '58'
doi: 10.1109/SiRF.2013.6489451
language:
- iso: eng
publication: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
13th Topical Meeting on
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6489451
status: public
title: 49 GHz 6-bit programmable divider in SiGe BiCMOS
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24361'
abstract:
- lang: eng
text: Two subharmonic receivers for 245 GHz spectroscopy sensor applications in
the 245 GHz ISM band have been proposed. One receiver consists of an 2nd APDP
(antiparallel diode pair) passive SHM (subharmonic mixer), a 120 GHz push-push
VCO with 1/64 divider, and a 120 GHz PA (power amplifier). The other consists
of a single-ended four-stage CB (common base) LNA, an 2 nd APDP passive SHM, an
IF amplifier, a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA. The
receivers are fabricated in a SiGe:C BiCMOS technology with f T /f max =300/500
GHz. The measured conversion gain are -17 dB rsp. 10.6 dB at 245 GHz with 3-dB
bandwidths of 13 GHz rsp. 14 GHz, and the single-side band noise figure are 17
dB rsp. 20 dB; the two receivers dissipates a power of 213 mW and 312 mW, respectively.
author:
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Mao Y, Schmalz K, Borngräber J, Scheytt C. 245 GHz subharmonic receivers in
SiGe. In: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
; 2013. doi:10.1109/RFIC.2013.6569533'
apa: Mao, Y., Schmalz, K., Borngräber, J., & Scheytt, C. (2013). 245 GHz subharmonic
receivers in SiGe. 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
https://doi.org/10.1109/RFIC.2013.6569533
bibtex: '@inproceedings{Mao_Schmalz_Borngräber_Scheytt_2013, place={Seattle, Washington},
title={245 GHz subharmonic receivers in SiGe}, DOI={10.1109/RFIC.2013.6569533},
booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium}, author={Mao,
Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}, year={2013}
}'
chicago: Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt.
“245 GHz Subharmonic Receivers in SiGe.” In 2013 IEEE Radio Frequency Integrated
Circuits (RFIC) Symposium. Seattle, Washington, 2013. https://doi.org/10.1109/RFIC.2013.6569533.
ieee: 'Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “245 GHz subharmonic receivers
in SiGe,” 2013, doi: 10.1109/RFIC.2013.6569533.'
mla: Mao, Yanfei, et al. “245 GHz Subharmonic Receivers in SiGe.” 2013 IEEE Radio
Frequency Integrated Circuits (RFIC) Symposium, 2013, doi:10.1109/RFIC.2013.6569533.
short: 'Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, in: 2013 IEEE Radio Frequency
Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013.'
conference:
end_date: 2013.06.04
start_date: 2013.06.02
date_created: 2021-09-14T09:22:41Z
date_updated: 2022-02-17T09:14:10Z
department:
- _id: '58'
doi: 10.1109/RFIC.2013.6569533
language:
- iso: eng
place: Seattle, Washington
publication: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
publication_identifier:
eisbn:
- 978-1-4673-6062-3
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6569533
status: public
title: 245 GHz subharmonic receivers in SiGe
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24358'
abstract:
- lang: eng
text: A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology
with f T /f max of 300/500 GHz is presented. The receiver consists of a four stage
LNA, an active power divider, an LO IQ generation network, and direct down-conversion
fundamental mixers. The integrated IQ receiver yields a conversion gain of 18
dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245
GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude
and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5
V supply and 20 mA from 2 V.
author:
- first_name: Mohamed
full_name: Elkhouly, Mohamed
last_name: Elkhouly
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Chafik
full_name: Meliani, Chafik
last_name: Meliani
- first_name: Frank
full_name: Ellinger, Frank
last_name: Ellinger
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 240 GHz Direct Conversion
IQ Receiver in 0.13 µm SiGe BiCMOS technology. In: 2013 IEEE Radio Frequency
Integrated Circuits (RFIC) Symposium,. ; 2013. doi:10.1109/RFIC.2013.6569589'
apa: Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., & Scheytt, C. (2013).
A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. 2013
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,. https://doi.org/10.1109/RFIC.2013.6569589
bibtex: '@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Seattle,
Washington}, title={A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS
technology}, DOI={10.1109/RFIC.2013.6569589},
booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,}, author={Elkhouly,
Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph},
year={2013} }'
chicago: Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph
Scheytt. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.”
In 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,. Seattle,
Washington, 2013. https://doi.org/10.1109/RFIC.2013.6569589.
ieee: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 240 GHz
Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology,” 2013, doi: 10.1109/RFIC.2013.6569589.'
mla: Elkhouly, Mohamed, et al. “A 240 GHz Direct Conversion IQ Receiver in 0.13
Μm SiGe BiCMOS Technology.” 2013 IEEE Radio Frequency Integrated Circuits (RFIC)
Symposium, 2013, doi:10.1109/RFIC.2013.6569589.
short: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: 2013 IEEE
Radio Frequency Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013.'
conference:
end_date: 2013.06.04
start_date: 2013.06.02
date_created: 2021-09-14T09:22:37Z
date_updated: 2022-02-17T09:05:42Z
department:
- _id: '58'
doi: 10.1109/RFIC.2013.6569589
language:
- iso: eng
place: Seattle, Washington
publication: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,
publication_identifier:
eisbn:
- 978-1-4673-6062-3
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6569589
status: public
title: A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24362'
abstract:
- lang: eng
text: 'A subharmonic receiver for 245 GHz spectroscopy sensor applications have
been proposed. The receiver consists of a CB (common base) LNA, 2 nd transconductance
SHM (subharmonic mixer) and a 120 GHz push-push VCO with 1/64 divider. The receiver
is fabricated in f T /f max =300/500 GHz SiGe: C BiCMOS technology. Its measured
single-ended gain is 14.3 dB at 245 GHz with tuning range of 15 GHz, and the single-side
band noise figure is 19 dB. The input 1-dB compression point is at -24 dBm. The
receiver dissipates a power of 200 mW.'
author:
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Chafik
full_name: Meliani, Chafik
last_name: Meliani
citation:
ama: 'Mao Y, Schmalz K, Borngräber J, Scheytt C, Meliani C. 245 GHz Subharmonic
Receiver in SiGe. In: IEEE International Microwave Symposium, Advances in Low
Noise Amplifiers and Receivers. ; 2013. doi:10.1109/MWSYM.2013.6697429'
apa: Mao, Y., Schmalz, K., Borngräber, J., Scheytt, C., & Meliani, C. (2013).
245 GHz Subharmonic Receiver in SiGe. IEEE International Microwave Symposium,
Advances in Low Noise Amplifiers and Receivers. https://doi.org/10.1109/MWSYM.2013.6697429
bibtex: '@inproceedings{Mao_Schmalz_Borngräber_Scheytt_Meliani_2013, place={Seattle,
Washington}, title={245 GHz Subharmonic Receiver in SiGe}, DOI={10.1109/MWSYM.2013.6697429},
booktitle={IEEE International Microwave Symposium, Advances in Low Noise Amplifiers
and Receivers}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes
and Scheytt, Christoph and Meliani, Chafik}, year={2013} }'
chicago: Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, Christoph Scheytt, and
Chafik Meliani. “245 GHz Subharmonic Receiver in SiGe.” In IEEE International
Microwave Symposium, Advances in Low Noise Amplifiers and Receivers. Seattle,
Washington, 2013. https://doi.org/10.1109/MWSYM.2013.6697429.
ieee: 'Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, and C. Meliani, “245 GHz Subharmonic
Receiver in SiGe,” 2013, doi: 10.1109/MWSYM.2013.6697429.'
mla: Mao, Yanfei, et al. “245 GHz Subharmonic Receiver in SiGe.” IEEE International
Microwave Symposium, Advances in Low Noise Amplifiers and Receivers, 2013,
doi:10.1109/MWSYM.2013.6697429.
short: 'Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, C. Meliani, in: IEEE International
Microwave Symposium, Advances in Low Noise Amplifiers and Receivers, Seattle,
Washington, 2013.'
conference:
end_date: 2013.06.07
start_date: 2013.06.02
date_created: 2021-09-14T09:22:42Z
date_updated: 2022-02-17T09:23:50Z
department:
- _id: '58'
doi: 10.1109/MWSYM.2013.6697429
language:
- iso: eng
place: Seattle, Washington
publication: IEEE International Microwave Symposium, Advances in Low Noise Amplifiers
and Receivers
publication_identifier:
eisbn:
- 978-1-4673-6176-7
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6697429
status: public
title: 245 GHz Subharmonic Receiver in SiGe
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24360'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Scheytt C. Wireless 100Gb/s Using A Powerand. In: IEEE International Conference
on Communications. ; 2013.'
apa: Scheytt, C. (2013). Wireless 100Gb/s Using A Powerand. IEEE International
Conference on Communications.
bibtex: '@inproceedings{Scheytt_2013, place={Budapest}, title={Wireless 100Gb/s
Using A Powerand}, booktitle={IEEE International Conference on Communications},
author={Scheytt, Christoph}, year={2013} }'
chicago: Scheytt, Christoph. “Wireless 100Gb/s Using A Powerand.” In IEEE International
Conference on Communications. Budapest, 2013.
ieee: C. Scheytt, “Wireless 100Gb/s Using A Powerand,” 2013.
mla: Scheytt, Christoph. “Wireless 100Gb/s Using A Powerand.” IEEE International
Conference on Communications, 2013.
short: 'C. Scheytt, in: IEEE International Conference on Communications, Budapest,
2013.'
date_created: 2021-09-14T09:22:40Z
date_updated: 2022-02-17T09:12:09Z
department:
- _id: '58'
language:
- iso: eng
place: Budapest
publication: IEEE International Conference on Communications
related_material:
link:
- relation: confirmation
url: https://www.wireless100gb.de/publication/ICC2013-Panel_P5_Christoph_Scheytt.pdf
status: public
title: Wireless 100Gb/s Using A Powerand
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24359'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Scheytt C. Hardware-Effizientes Mixed-Signal Entzerrfilter.; 2013.
apa: Scheytt, C. (2013). Hardware-Effizientes Mixed-Signal Entzerrfilter.
bibtex: '@book{Scheytt_2013, title={Hardware-Effizientes Mixed-Signal Entzerrfilter},
author={Scheytt, Christoph}, year={2013} }'
chicago: Scheytt, Christoph. Hardware-Effizientes Mixed-Signal Entzerrfilter,
2013.
ieee: C. Scheytt, Hardware-Effizientes Mixed-Signal Entzerrfilter. 2013.
mla: Scheytt, Christoph. Hardware-Effizientes Mixed-Signal Entzerrfilter.
2013.
short: C. Scheytt, Hardware-Effizientes Mixed-Signal Entzerrfilter, 2013.
date_created: 2021-09-14T09:22:39Z
date_updated: 2022-02-17T09:09:43Z
department:
- _id: '58'
language:
- iso: eng
status: public
title: Hardware-Effizientes Mixed-Signal Entzerrfilter
type: misc
user_id: '15931'
year: '2013'
...
---
_id: '24339'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
- first_name: Wojciech
full_name: Debski, Wojciech
last_name: Debski
- first_name: Wolfgang
full_name: Winkler, Wolfgang
last_name: Winkler
citation:
ama: 'Scheytt C, Sun Y, Schmalz K, et al. mm-Wave System-On-Chip Design in 0,13µm
SiGe BiCMOS. In: W 06 (EuMC & EuMIC). ; 2013.'
apa: Scheytt, C., Sun, Y., Schmalz, K., Mao, Y., Wang, R., Debski, W., & Winkler,
W. (2013). mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS. W 06 (EuMC
& EuMIC).
bibtex: '@inproceedings{Scheytt_Sun_Schmalz_Mao_Wang_Debski_Winkler_2013, place={Nürnberg
Convention Center}, title={mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS},
booktitle={W 06 (EuMC & EuMIC)}, author={Scheytt, Christoph and Sun, Yaoming
and Schmalz, Klaus and Mao, Yanfei and Wang, Ruoyu and Debski, Wojciech and Winkler,
Wolfgang}, year={2013} }'
chicago: Scheytt, Christoph, Yaoming Sun, Klaus Schmalz, Yanfei Mao, Ruoyu Wang,
Wojciech Debski, and Wolfgang Winkler. “Mm-Wave System-On-Chip Design in 0,13µm
SiGe BiCMOS.” In W 06 (EuMC & EuMIC). Nürnberg Convention Center, 2013.
ieee: C. Scheytt et al., “mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS,”
2013.
mla: Scheytt, Christoph, et al. “Mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS.”
W 06 (EuMC & EuMIC), 2013.
short: 'C. Scheytt, Y. Sun, K. Schmalz, Y. Mao, R. Wang, W. Debski, W. Winkler,
in: W 06 (EuMC & EuMIC), Nürnberg Convention Center, 2013.'
date_created: 2021-09-14T09:22:13Z
date_updated: 2022-01-10T10:46:14Z
department:
- _id: '58'
language:
- iso: eng
place: Nürnberg Convention Center
publication: W 06 (EuMC & EuMIC)
related_material:
link:
- relation: confirmation
url: https://www.eumweek.com/archive/eumweek2013/2013/default.html
status: public
title: mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24344'
abstract:
- lang: eng
text: In this paper, a novel 180°hybrid with different input frequencies is proposed
to combine RF and local oscillator (LO) signals with different frequencies in
a gate/base-pumped harmonic mixer. The detailed analysis and design procedures
are presented in this paper. To further reduce the chip size, the multilayer metallization
above the lossy silicon substrate is employed to implement the hybrid. A V-band
down-converted 2× harmonic mixer in 90-nm CMOS process and a D-band down-converted
4× harmonic mixer in the 130-nm SiGe process are designed, fabricated, and measured
to verify the concept. The 2× harmonic mixer possesses 0-dB conversion gain at
60 GHz with 0-dBm LO power with merely 2.4-mW dc power. The 4× harmonic mixer
achieves 0.5-dB conversion gain at 120 GHz with 2-dBm LO power and 27.3-mW dc
power. With the proposed reduced-size 180° hybrid, gate/base-pumped harmonic mixers
are very attractive in transceivers demanding low LO frequency and power.
author:
- first_name: Jhe-Jia
full_name: Kuo, Jhe-Jia
last_name: Kuo
- first_name: Chun-Hsien
full_name: Lien, Chun-Hsien
last_name: Lien
- first_name: Zuo-Min
full_name: Tsai, Zuo-Min
last_name: Tsai
- first_name: Kun-You
full_name: Lin, Kun-You
last_name: Lin
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Huei
full_name: Wang, Huei
last_name: Wang
citation:
ama: Kuo J-J, Lien C-H, Tsai Z-M, et al. Design and Analysis of Down-Conversion
Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With
Different Input Frequencies . Microwave Theory and Techniques, IEEE Transactions
on. 2013;60(8):2473-2485. doi:10.1109/TMTT.2012.2202039
apa: Kuo, J.-J., Lien, C.-H., Tsai, Z.-M., Lin, K.-Y., Schmalz, K., Scheytt, C.,
& Wang, H. (2013). Design and Analysis of Down-Conversion Gate/Base-Pumped
Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With Different Input
Frequencies . Microwave Theory and Techniques, IEEE Transactions On, 60(8),
2473–2485. https://doi.org/10.1109/TMTT.2012.2202039
bibtex: '@article{Kuo_Lien_Tsai_Lin_Schmalz_Scheytt_Wang_2013, title={Design and
Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size
180 ^\circ Hybrid With Different Input Frequencies }, volume={60}, DOI={10.1109/TMTT.2012.2202039},
number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Kuo,
Jhe-Jia and Lien, Chun-Hsien and Tsai, Zuo-Min and Lin, Kun-You and Schmalz, Klaus
and Scheytt, Christoph and Wang, Huei}, year={2013}, pages={2473–2485} }'
chicago: 'Kuo, Jhe-Jia, Chun-Hsien Lien, Zuo-Min Tsai, Kun-You Lin, Klaus Schmalz,
Christoph Scheytt, and Huei Wang. “Design and Analysis of Down-Conversion Gate/Base-Pumped
Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With Different Input
Frequencies .” Microwave Theory and Techniques, IEEE Transactions On 60,
no. 8 (2013): 2473–85. https://doi.org/10.1109/TMTT.2012.2202039.'
ieee: 'J.-J. Kuo et al., “Design and Analysis of Down-Conversion Gate/Base-Pumped
Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With Different Input
Frequencies ,” Microwave Theory and Techniques, IEEE Transactions on, vol.
60, no. 8, pp. 2473–2485, 2013, doi: 10.1109/TMTT.2012.2202039.'
mla: Kuo, Jhe-Jia, et al. “Design and Analysis of Down-Conversion Gate/Base-Pumped
Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With Different Input
Frequencies .” Microwave Theory and Techniques, IEEE Transactions On, vol.
60, no. 8, 2013, pp. 2473–85, doi:10.1109/TMTT.2012.2202039.
short: J.-J. Kuo, C.-H. Lien, Z.-M. Tsai, K.-Y. Lin, K. Schmalz, C. Scheytt, H.
Wang, Microwave Theory and Techniques, IEEE Transactions On 60 (2013) 2473–2485.
date_created: 2021-09-14T09:22:19Z
date_updated: 2022-01-11T10:44:00Z
department:
- _id: '58'
doi: 10.1109/TMTT.2012.2202039
intvolume: ' 60'
issue: '8'
language:
- iso: eng
page: 2473-2485
publication: Microwave Theory and Techniques, IEEE Transactions on
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6214582
status: public
title: 'Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using
Novel Reduced-Size 180 ^\circ Hybrid With Different Input Frequencies '
type: journal_article
user_id: '15931'
volume: 60
year: '2013'
...
---
_id: '24343'
abstract:
- lang: ger
text: 50 Jahre Moore‘s Gesetz ? „More Moore“ & „More than Moore“ ? Miniatur-Radar-System
? Silizium-Photonik für schnelle Kommunikation ? Photonischer Winkelsensor
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Scheytt C. Nano-/Mikroelektronik als Enabler für neue Ansätze. In: HNI-Forum
September . ; 2013.'
apa: Scheytt, C. (2013). Nano-/Mikroelektronik als Enabler für neue Ansätze. HNI-Forum
September .
bibtex: '@inproceedings{Scheytt_2013, place={HNI, Fürstenallee 11, 33102 Paderborn},
title={Nano-/Mikroelektronik als Enabler für neue Ansätze}, booktitle={HNI-Forum
September }, author={Scheytt, Christoph}, year={2013} }'
chicago: Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.”
In HNI-Forum September . HNI, Fürstenallee 11, 33102 Paderborn, 2013.
ieee: C. Scheytt, “Nano-/Mikroelektronik als Enabler für neue Ansätze,” 2013.
mla: Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.” HNI-Forum
September , 2013.
short: 'C. Scheytt, in: HNI-Forum September , HNI, Fürstenallee 11, 33102 Paderborn,
2013.'
date_created: 2021-09-14T09:22:18Z
date_updated: 2022-01-11T10:42:53Z
department:
- _id: '58'
language:
- iso: eng
place: HNI, Fürstenallee 11, 33102 Paderborn
publication: 'HNI-Forum September '
status: public
title: Nano-/Mikroelektronik als Enabler für neue Ansätze
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24345'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Scheytt C. RF-MST Cluster Workshop on MEMSWAVE 2013. In: RF-MST Cluster
Workshop on MEMSWAVE 2013. ; 2013.'
apa: Scheytt, C. (2013). RF-MST Cluster Workshop on MEMSWAVE 2013. RF-MST Cluster
Workshop on MEMSWAVE 2013.
bibtex: '@inproceedings{Scheytt_2013, title={RF-MST Cluster Workshop on MEMSWAVE
2013}, booktitle={RF-MST Cluster Workshop on MEMSWAVE 2013}, author={Scheytt,
Christoph}, year={2013} }'
chicago: Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” In RF-MST
Cluster Workshop on MEMSWAVE 2013, 2013.
ieee: C. Scheytt, “RF-MST Cluster Workshop on MEMSWAVE 2013,” 2013.
mla: Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” RF-MST Cluster
Workshop on MEMSWAVE 2013, 2013.
short: 'C. Scheytt, in: RF-MST Cluster Workshop on MEMSWAVE 2013, 2013.'
date_created: 2021-09-14T09:22:21Z
date_updated: 2022-01-11T10:52:51Z
department:
- _id: '58'
language:
- iso: eng
publication: RF-MST Cluster Workshop on MEMSWAVE 2013
related_material:
link:
- relation: confirmation
url: https://www.enas.fraunhofer.de/content/dam/enas/Dokumente/Deutsch/News_Events/Konferenzen/MEMSWAVE_2013_first.pdf
status: public
title: RF-MST Cluster Workshop on MEMSWAVE 2013
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24340'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Rolf
full_name: Kraemer, Rolf
last_name: Kraemer
- first_name: Ingmar
full_name: Kallfass, Ingmar
last_name: Kallfass
citation:
ama: 'Scheytt C, Kraemer R, Kallfass I. Strategies for Energy-Efficient 100 Gb/s
Baseband. In: W 19 (EuMC \& EuMIC). ; 2013.'
apa: Scheytt, C., Kraemer, R., & Kallfass, I. (2013). Strategies for Energy-Efficient
100 Gb/s Baseband. W 19 (EuMC \& EuMIC).
bibtex: '@inproceedings{Scheytt_Kraemer_Kallfass_2013, place={Nürnberg Convention
Center}, title={Strategies for Energy-Efficient 100 Gb/s Baseband}, booktitle={W
19 (EuMC \& EuMIC)}, author={Scheytt, Christoph and Kraemer, Rolf and Kallfass,
Ingmar}, year={2013} }'
chicago: Scheytt, Christoph, Rolf Kraemer, and Ingmar Kallfass. “Strategies for
Energy-Efficient 100 Gb/s Baseband.” In W 19 (EuMC \& EuMIC). Nürnberg
Convention Center, 2013.
ieee: C. Scheytt, R. Kraemer, and I. Kallfass, “Strategies for Energy-Efficient
100 Gb/s Baseband,” 2013.
mla: Scheytt, Christoph, et al. “Strategies for Energy-Efficient 100 Gb/s Baseband.”
W 19 (EuMC \& EuMIC), 2013.
short: 'C. Scheytt, R. Kraemer, I. Kallfass, in: W 19 (EuMC \& EuMIC), Nürnberg
Convention Center, 2013.'
date_created: 2021-09-14T09:22:14Z
date_updated: 2022-01-10T11:36:56Z
department:
- _id: '58'
language:
- iso: eng
place: Nürnberg Convention Center
publication: W 19 (EuMC \& EuMIC)
related_material:
link:
- relation: confirmation
url: https://www.eumweek.com/archive/eumweek2013/2013/docs/2013_conf_programme.pdf
status: public
title: Strategies for Energy-Efficient 100 Gb/s Baseband
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24341'
abstract:
- lang: eng
text: This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe
BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB
of gain. A SP4T switch is integrated to select between the four outputs of the
beamforming network. Finally, an amplifier used to compensate the losses of the
SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA
from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies
1.5 × 2.4 mm 2 .
author:
- first_name: Mohamed
full_name: Elkhouly, Mohamed
last_name: Elkhouly
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Chafik
full_name: Meliani, Chafik
last_name: Meliani
- first_name: Frank
full_name: Ellinger, Frank
last_name: Ellinger
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 220-245 GHz Switched
Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . In: IEEE BIPOLAR / BiCMOS
CIRCUITS AND TECHNOLOGY MEETING,. ; 2013. doi:10.1109/BCTM.2013.6798158'
apa: Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., & Scheytt, C. (2013).
A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . IEEE
BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. https://doi.org/10.1109/BCTM.2013.6798158
bibtex: '@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Bordeaux,
France,}, title={A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS
technology }, DOI={10.1109/BCTM.2013.6798158},
booktitle={IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}, author={Elkhouly,
Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph},
year={2013} }'
chicago: Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph
Scheytt. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology
.” In IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. Bordeaux,
France, 2013. https://doi.org/10.1109/BCTM.2013.6798158.
ieee: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 220-245
GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ,” 2013, doi:
10.1109/BCTM.2013.6798158.'
mla: Elkhouly, Mohamed, et al. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm
SiGe BiCMOS Technology .” IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,
2013, doi:10.1109/BCTM.2013.6798158.
short: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: IEEE BIPOLAR
/ BiCMOS CIRCUITS AND TECHNOLOGY MEETING, Bordeaux, France, 2013.'
date_created: 2021-09-14T09:22:15Z
date_updated: 2022-01-11T09:20:48Z
department:
- _id: '58'
doi: 10.1109/BCTM.2013.6798158
language:
- iso: eng
place: Bordeaux, France,
publication: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,
related_material:
link:
- relation: confirmation
url: https://ris.uni-paderborn.de/record/24341
status: public
title: 'A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology '
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24342'
abstract:
- lang: eng
text: Two half-wavelength 122 GHz patch antennas were designed and manufactured
by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer.
It enables the full integration of the millimeter-wave transceiver circuits and
the antennas on a single chip to simplify the packaging procedure at millimeter-wave
frequencies, thereby reducing the cost. The two patch antennas are fed by different
feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled
feed. They exhibit similar performance and offer the flexibility of designing
the interconnects (feed lines routing) between the circuits and the antennas within
the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center
frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency
of about 50%.
author:
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
- first_name: Mehmet
full_name: Kaynak, Mehmet
last_name: Kaynak
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Stefan
full_name: Beer, Stefan
last_name: Beer
- first_name: B.
full_name: Goettel, B.
last_name: Goettel
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Wang R, Kaynak M, Sun Y, et al. 122 GHz Patch Antenna Designs by Using BCB
Above SiGe BiCMOS wafer process for system-on-chip applications. In: 24th Annual
IEEE International Symposium on Personal, Indoor and Mobile Radio Communications.
; 2013. doi:10.1109/PIMRC.2013.6666358'
apa: Wang, R., Kaynak, M., Sun, Y., Borngräber, J., Beer, S., Goettel, B., &
Scheytt, C. (2013). 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS
wafer process for system-on-chip applications. 24th Annual IEEE International
Symposium on Personal, Indoor and Mobile Radio Communications. https://doi.org/10.1109/PIMRC.2013.6666358
bibtex: '@inproceedings{Wang_Kaynak_Sun_Borngräber_Beer_Goettel_Scheytt_2013, place={Hilton,
London Metropole}, title={122 GHz Patch Antenna Designs by Using BCB Above SiGe
BiCMOS wafer process for system-on-chip applications}, DOI={10.1109/PIMRC.2013.6666358},
booktitle={24th Annual IEEE International Symposium on Personal, Indoor and Mobile
Radio Communications}, author={Wang, Ruoyu and Kaynak, Mehmet and Sun, Yaoming
and Borngräber, Johannes and Beer, Stefan and Goettel, B. and Scheytt, Christoph},
year={2013} }'
chicago: Wang, Ruoyu, Mehmet Kaynak, Yaoming Sun, Johannes Borngräber, Stefan Beer,
B. Goettel, and Christoph Scheytt. “122 GHz Patch Antenna Designs by Using BCB
Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” In 24th Annual
IEEE International Symposium on Personal, Indoor and Mobile Radio Communications.
Hilton, London Metropole, 2013. https://doi.org/10.1109/PIMRC.2013.6666358.
ieee: 'R. Wang et al., “122 GHz Patch Antenna Designs by Using BCB Above
SiGe BiCMOS wafer process for system-on-chip applications,” 2013, doi: 10.1109/PIMRC.2013.6666358.'
mla: Wang, Ruoyu, et al. “122 GHz Patch Antenna Designs by Using BCB Above SiGe
BiCMOS Wafer Process for System-on-Chip Applications.” 24th Annual IEEE International
Symposium on Personal, Indoor and Mobile Radio Communications, 2013, doi:10.1109/PIMRC.2013.6666358.
short: 'R. Wang, M. Kaynak, Y. Sun, J. Borngräber, S. Beer, B. Goettel, C. Scheytt,
in: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio
Communications, Hilton, London Metropole, 2013.'
conference:
end_date: 11.09.2013
start_date: 08.09.2013
date_created: 2021-09-14T09:22:17Z
date_updated: 2022-01-11T10:29:40Z
department:
- _id: '58'
doi: 10.1109/PIMRC.2013.6666358
language:
- iso: eng
place: Hilton, London Metropole
publication: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile
Radio Communications
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6666358
status: public
title: 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process
for system-on-chip applications
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24347'
abstract:
- lang: eng
text: In this paper, an integrated dielectric sensor with a read-out circuit in
an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists
of a 500-μm shorted half-wave coplanar-waveguide transmission line in the uppermost
metal layer of the silicon process, while the read-out is obtained by reflection
coefficient measurement with an integrated reflectometer and a signal source.
The reflectometer is verified with a circuit breakout including an integrated
dummy sensor. The reflectometer is able to measure the phase of the reflection
coefficient from 117 to 134 GHz with a resolution of 0.1° and a standard deviation
of 0.082°. The integrated sensor with the reflectometer circuit have been fabricated
in a 190-GHz fT SiGe:C BiCMOS technology. It spans an area of 1.4 mm 2 and consumes
75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit
board for characterization by immersion into test liquids. The sensor is controlled
by a controller board and a personal computer enabling a measurement time of up
to 1 ms per frequency point. Functionality of the sensor is demonstrated from
118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol
mixtures, showing good correlation between theory and measurement. The sensor
shows a standard deviation of the measured phase of 0.220° and is able to detect
a difference in ε' r of 0.0125
author:
- first_name: Benjamin
full_name: Laemmle, Benjamin
last_name: Laemmle
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Robert
full_name: Weigel, Robert
last_name: Weigel
- first_name: Dietmar
full_name: Kissinger, Dietmar
last_name: Kissinger
citation:
ama: Laemmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D. A 125-GHz Permittivity
Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. Microwave
Theory and Techniques, IEEE Transactions on. 2013;61(5):2185-2194. doi:10.1109/TMTT.2013.2253792
apa: Laemmle, B., Schmalz, K., Scheytt, C., Weigel, R., & Kissinger, D. (2013).
A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology.
Microwave Theory and Techniques, IEEE Transactions On, 61(5), 2185–2194.
https://doi.org/10.1109/TMTT.2013.2253792
bibtex: '@article{Laemmle_Schmalz_Scheytt_Weigel_Kissinger_2013, title={A 125-GHz
Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology},
volume={61}, DOI={10.1109/TMTT.2013.2253792},
number={5}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Laemmle,
Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger,
Dietmar}, year={2013}, pages={2185–2194} }'
chicago: 'Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Robert Weigel, and
Dietmar Kissinger. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm
SiGe BiCMOS Technology.” Microwave Theory and Techniques, IEEE Transactions
On 61, no. 5 (2013): 2185–94. https://doi.org/10.1109/TMTT.2013.2253792.'
ieee: 'B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, and D. Kissinger, “A 125-GHz
Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology,”
Microwave Theory and Techniques, IEEE Transactions on, vol. 61, no. 5,
pp. 2185–2194, 2013, doi: 10.1109/TMTT.2013.2253792.'
mla: Laemmle, Benjamin, et al. “A 125-GHz Permittivity Sensor With Read-Out Circuit
in a 250-Nm SiGe BiCMOS Technology.” Microwave Theory and Techniques, IEEE
Transactions On, vol. 61, no. 5, 2013, pp. 2185–94, doi:10.1109/TMTT.2013.2253792.
short: B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, D. Kissinger, Microwave Theory
and Techniques, IEEE Transactions On 61 (2013) 2185–2194.
date_created: 2021-09-14T09:22:23Z
date_updated: 2022-01-18T10:15:31Z
department:
- _id: '58'
doi: 10.1109/TMTT.2013.2253792
intvolume: ' 61'
issue: '5'
language:
- iso: eng
page: 2185-2194
publication: Microwave Theory and Techniques, IEEE Transactions on
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6492143
status: public
title: A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS
Technology
type: journal_article
user_id: '15931'
volume: 61
year: '2013'
...
---
_id: '24348'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Günter
full_name: Grau, Günter
last_name: Grau
citation:
ama: 'Scheytt C, Grau G. Neue Ansätze für miniaturisierte, hochintegrierte Abstands-,
Geschwindigkeits- und Drehwinkelsensoren. In: Wissenschaftsforum 2013, Intelligente
Technische Systeme, Heinz Nixdorf Institut. ; 2013.'
apa: Scheytt, C., & Grau, G. (2013). Neue Ansätze für miniaturisierte, hochintegrierte
Abstands-, Geschwindigkeits- und Drehwinkelsensoren. Wissenschaftsforum 2013,
Intelligente Technische Systeme, Heinz Nixdorf Institut.
bibtex: '@inproceedings{Scheytt_Grau_2013, place={Heinz Nixdorf MuseumsForum Paderborn,
Germany}, title={Neue Ansätze für miniaturisierte, hochintegrierte Abstands-,
Geschwindigkeits- und Drehwinkelsensoren}, booktitle={Wissenschaftsforum 2013,
Intelligente Technische Systeme, Heinz Nixdorf Institut}, author={Scheytt, Christoph
and Grau, Günter}, year={2013} }'
chicago: Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte,
Hochintegrierte Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” In Wissenschaftsforum
2013, Intelligente Technische Systeme, Heinz Nixdorf Institut. Heinz Nixdorf
MuseumsForum Paderborn, Germany, 2013.
ieee: C. Scheytt and G. Grau, “Neue Ansätze für miniaturisierte, hochintegrierte
Abstands-, Geschwindigkeits- und Drehwinkelsensoren,” 2013.
mla: Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte, Hochintegrierte
Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” Wissenschaftsforum 2013,
Intelligente Technische Systeme, Heinz Nixdorf Institut, 2013.
short: 'C. Scheytt, G. Grau, in: Wissenschaftsforum 2013, Intelligente Technische
Systeme, Heinz Nixdorf Institut, Heinz Nixdorf MuseumsForum Paderborn, Germany,
2013.'
date_created: 2021-09-14T09:22:24Z
date_updated: 2022-01-18T10:17:43Z
department:
- _id: '58'
language:
- iso: eng
place: Heinz Nixdorf MuseumsForum Paderborn, Germany
publication: Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf
Institut
related_material:
link:
- relation: confirmation
url: https://docplayer.org/42941783-Wissenschaftsforum-programm-und-einladung-wissenschaftsforum-intelligente-technische-systeme.htm
status: public
title: Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits-
und Drehwinkelsensoren
type: conference
user_id: '15931'
year: '2013'
...