---
_id: '24354'
abstract:
- lang: eng
  text: In this paper, a 6-bit true modular programmable frequency divider with division
    ratios ranging from 64 to 127 is reported. It is composed of a divider chain of
    6 divide-by-2/3 cells, and ECL stages that are introduced as synchronization circuits
    for programming inputs. The synchronization circuits have CMOS input for compatibility
    with programming circuits. The stand-alone divider chain is functional up to an
    input clock frequency of 49 GHz. The combination of the divider chain with synchronization
    circuits is functional up to 44 GHz. The 6 stage divider draws 34 mA current from
    a 2.7 V supply. The synchronization circuits draw 30 mA from a 3 V supply. The
    circuit is fabricated in a 0.13 μm SiGe BiCMOS technology, and is well suited
    for millimeter-wave phase-locked loop (PLL) circuits which require fine frequency
    resolution.
author:
- first_name: Arzu
  full_name: Ergintav, Arzu
  last_name: Ergintav
- first_name: Yaoming
  full_name: Sun, Yaoming
  last_name: Sun
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
- first_name: Yasar
  full_name: Gürbüz, Yasar
  last_name: Gürbüz
citation:
  ama: 'Ergintav A, Sun Y, Scheytt C, Gürbüz Y. 49 GHz 6-bit programmable divider
    in SiGe BiCMOS. In: <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    2013 IEEE 13th Topical Meeting On</i>. ; 2013. doi:<a href="https://doi.org/10.1109/SiRF.2013.6489451">10.1109/SiRF.2013.6489451</a>'
  apa: Ergintav, A., Sun, Y., Scheytt, C., &#38; Gürbüz, Y. (2013). 49 GHz 6-bit programmable
    divider in SiGe BiCMOS. <i>Silicon Monolithic Integrated Circuits in RF Systems
    (SiRF), 2013 IEEE 13th Topical Meeting On</i>. <a href="https://doi.org/10.1109/SiRF.2013.6489451">https://doi.org/10.1109/SiRF.2013.6489451</a>
  bibtex: '@inproceedings{Ergintav_Sun_Scheytt_Gürbüz_2013, title={49 GHz 6-bit programmable
    divider in SiGe BiCMOS}, DOI={<a href="https://doi.org/10.1109/SiRF.2013.6489451">10.1109/SiRF.2013.6489451</a>},
    booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
    13th Topical Meeting on}, author={Ergintav, Arzu and Sun, Yaoming and Scheytt,
    Christoph and Gürbüz, Yasar}, year={2013} }'
  chicago: Ergintav, Arzu, Yaoming Sun, Christoph Scheytt, and Yasar Gürbüz. “49 GHz
    6-Bit Programmable Divider in SiGe BiCMOS.” In <i>Silicon Monolithic Integrated
    Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013. <a
    href="https://doi.org/10.1109/SiRF.2013.6489451">https://doi.org/10.1109/SiRF.2013.6489451</a>.
  ieee: 'A. Ergintav, Y. Sun, C. Scheytt, and Y. Gürbüz, “49 GHz 6-bit programmable
    divider in SiGe BiCMOS,” 2013, doi: <a href="https://doi.org/10.1109/SiRF.2013.6489451">10.1109/SiRF.2013.6489451</a>.'
  mla: Ergintav, Arzu, et al. “49 GHz 6-Bit Programmable Divider in SiGe BiCMOS.”
    <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th
    Topical Meeting On</i>, 2013, doi:<a href="https://doi.org/10.1109/SiRF.2013.6489451">10.1109/SiRF.2013.6489451</a>.
  short: 'A. Ergintav, Y. Sun, C. Scheytt, Y. Gürbüz, in: Silicon Monolithic Integrated
    Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013.'
conference:
  end_date: 2013.01.23
  start_date: 2013.01.21
date_created: 2021-09-14T09:22:32Z
date_updated: 2022-02-17T08:59:40Z
department:
- _id: '58'
doi: 10.1109/SiRF.2013.6489451
language:
- iso: eng
publication: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE
  13th Topical Meeting on
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6489451
status: public
title: 49 GHz 6-bit programmable divider in SiGe BiCMOS
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24361'
abstract:
- lang: eng
  text: Two subharmonic receivers for 245 GHz spectroscopy sensor applications in
    the 245 GHz ISM band have been proposed. One receiver consists of an 2nd APDP
    (antiparallel diode pair) passive SHM (subharmonic mixer), a 120 GHz push-push
    VCO with 1/64 divider, and a 120 GHz PA (power amplifier). The other consists
    of a single-ended four-stage CB (common base) LNA, an 2 nd APDP passive SHM, an
    IF amplifier, a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA. The
    receivers are fabricated in a SiGe:C BiCMOS technology with f T /f max =300/500
    GHz. The measured conversion gain are -17 dB rsp. 10.6 dB at 245 GHz with 3-dB
    bandwidths of 13 GHz rsp. 14 GHz, and the single-side band noise figure are 17
    dB rsp. 20 dB; the two receivers dissipates a power of 213 mW and 312 mW, respectively.
author:
- first_name: Yanfei
  full_name: Mao, Yanfei
  last_name: Mao
- first_name: Klaus
  full_name: Schmalz, Klaus
  last_name: Schmalz
- first_name: Johannes
  full_name: Borngräber, Johannes
  last_name: Borngräber
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: 'Mao Y, Schmalz K, Borngräber J, Scheytt C. 245 GHz subharmonic receivers in
    SiGe. In: <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium</i>.
    ; 2013. doi:<a href="https://doi.org/10.1109/RFIC.2013.6569533">10.1109/RFIC.2013.6569533</a>'
  apa: Mao, Y., Schmalz, K., Borngräber, J., &#38; Scheytt, C. (2013). 245 GHz subharmonic
    receivers in SiGe. <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium</i>.
    <a href="https://doi.org/10.1109/RFIC.2013.6569533">https://doi.org/10.1109/RFIC.2013.6569533</a>
  bibtex: '@inproceedings{Mao_Schmalz_Borngräber_Scheytt_2013, place={Seattle, Washington},
    title={245 GHz subharmonic receivers in SiGe}, DOI={<a href="https://doi.org/10.1109/RFIC.2013.6569533">10.1109/RFIC.2013.6569533</a>},
    booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium}, author={Mao,
    Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}, year={2013}
    }'
  chicago: Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt.
    “245 GHz Subharmonic Receivers in SiGe.” In <i>2013 IEEE Radio Frequency Integrated
    Circuits (RFIC) Symposium</i>. Seattle, Washington, 2013. <a href="https://doi.org/10.1109/RFIC.2013.6569533">https://doi.org/10.1109/RFIC.2013.6569533</a>.
  ieee: 'Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “245 GHz subharmonic receivers
    in SiGe,” 2013, doi: <a href="https://doi.org/10.1109/RFIC.2013.6569533">10.1109/RFIC.2013.6569533</a>.'
  mla: Mao, Yanfei, et al. “245 GHz Subharmonic Receivers in SiGe.” <i>2013 IEEE Radio
    Frequency Integrated Circuits (RFIC) Symposium</i>, 2013, doi:<a href="https://doi.org/10.1109/RFIC.2013.6569533">10.1109/RFIC.2013.6569533</a>.
  short: 'Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, in: 2013 IEEE Radio Frequency
    Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013.'
conference:
  end_date: 2013.06.04
  start_date: 2013.06.02
date_created: 2021-09-14T09:22:41Z
date_updated: 2022-02-17T09:14:10Z
department:
- _id: '58'
doi: 10.1109/RFIC.2013.6569533
language:
- iso: eng
place: Seattle, Washington
publication: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
publication_identifier:
  eisbn:
  - 978-1-4673-6062-3
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6569533
status: public
title: 245 GHz subharmonic receivers in SiGe
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24358'
abstract:
- lang: eng
  text: A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology
    with f T /f max of 300/500 GHz is presented. The receiver consists of a four stage
    LNA, an active power divider, an LO IQ generation network, and direct down-conversion
    fundamental mixers. The integrated IQ receiver yields a conversion gain of 18
    dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245
    GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude
    and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5
    V supply and 20 mA from 2 V.
author:
- first_name: Mohamed
  full_name: Elkhouly, Mohamed
  last_name: Elkhouly
- first_name: Yanfei
  full_name: Mao, Yanfei
  last_name: Mao
- first_name: Chafik
  full_name: Meliani, Chafik
  last_name: Meliani
- first_name: Frank
  full_name: Ellinger, Frank
  last_name: Ellinger
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: 'Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 240 GHz Direct Conversion
    IQ Receiver in 0.13 µm SiGe BiCMOS technology. In: <i>2013 IEEE Radio Frequency
    Integrated Circuits (RFIC) Symposium,</i>. ; 2013. doi:<a href="https://doi.org/10.1109/RFIC.2013.6569589">10.1109/RFIC.2013.6569589</a>'
  apa: Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013).
    A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. <i>2013
    IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. <a href="https://doi.org/10.1109/RFIC.2013.6569589">https://doi.org/10.1109/RFIC.2013.6569589</a>
  bibtex: '@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Seattle,
    Washington}, title={A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS
    technology}, DOI={<a href="https://doi.org/10.1109/RFIC.2013.6569589">10.1109/RFIC.2013.6569589</a>},
    booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,}, author={Elkhouly,
    Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph},
    year={2013} }'
  chicago: Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph
    Scheytt. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.”
    In <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. Seattle,
    Washington, 2013. <a href="https://doi.org/10.1109/RFIC.2013.6569589">https://doi.org/10.1109/RFIC.2013.6569589</a>.
  ieee: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 240 GHz
    Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology,” 2013, doi: <a
    href="https://doi.org/10.1109/RFIC.2013.6569589">10.1109/RFIC.2013.6569589</a>.'
  mla: Elkhouly, Mohamed, et al. “A 240 GHz Direct Conversion IQ Receiver in 0.13
    Μm SiGe BiCMOS Technology.” <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC)
    Symposium,</i> 2013, doi:<a href="https://doi.org/10.1109/RFIC.2013.6569589">10.1109/RFIC.2013.6569589</a>.
  short: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: 2013 IEEE
    Radio Frequency Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013.'
conference:
  end_date: 2013.06.04
  start_date: 2013.06.02
date_created: 2021-09-14T09:22:37Z
date_updated: 2022-02-17T09:05:42Z
department:
- _id: '58'
doi: 10.1109/RFIC.2013.6569589
language:
- iso: eng
place: Seattle, Washington
publication: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,
publication_identifier:
  eisbn:
  - 978-1-4673-6062-3
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6569589
status: public
title: A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24362'
abstract:
- lang: eng
  text: 'A subharmonic receiver for 245 GHz spectroscopy sensor applications have
    been proposed. The receiver consists of a CB (common base) LNA, 2 nd transconductance
    SHM (subharmonic mixer) and a 120 GHz push-push VCO with 1/64 divider. The receiver
    is fabricated in f T /f max =300/500 GHz SiGe: C BiCMOS technology. Its measured
    single-ended gain is 14.3 dB at 245 GHz with tuning range of 15 GHz, and the single-side
    band noise figure is 19 dB. The input 1-dB compression point is at -24 dBm. The
    receiver dissipates a power of 200 mW.'
author:
- first_name: Yanfei
  full_name: Mao, Yanfei
  last_name: Mao
- first_name: Klaus
  full_name: Schmalz, Klaus
  last_name: Schmalz
- first_name: Johannes
  full_name: Borngräber, Johannes
  last_name: Borngräber
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
- first_name: Chafik
  full_name: Meliani, Chafik
  last_name: Meliani
citation:
  ama: 'Mao Y, Schmalz K, Borngräber J, Scheytt C, Meliani C. 245 GHz Subharmonic
    Receiver in SiGe. In: <i>IEEE International Microwave Symposium, Advances in Low
    Noise Amplifiers and Receivers</i>. ; 2013. doi:<a href="https://doi.org/10.1109/MWSYM.2013.6697429">10.1109/MWSYM.2013.6697429</a>'
  apa: Mao, Y., Schmalz, K., Borngräber, J., Scheytt, C., &#38; Meliani, C. (2013).
    245 GHz Subharmonic Receiver in SiGe. <i>IEEE International Microwave Symposium,
    Advances in Low Noise Amplifiers and Receivers</i>. <a href="https://doi.org/10.1109/MWSYM.2013.6697429">https://doi.org/10.1109/MWSYM.2013.6697429</a>
  bibtex: '@inproceedings{Mao_Schmalz_Borngräber_Scheytt_Meliani_2013, place={Seattle,
    Washington}, title={245 GHz Subharmonic Receiver in SiGe}, DOI={<a href="https://doi.org/10.1109/MWSYM.2013.6697429">10.1109/MWSYM.2013.6697429</a>},
    booktitle={IEEE International Microwave Symposium, Advances in Low Noise Amplifiers
    and Receivers}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes
    and Scheytt, Christoph and Meliani, Chafik}, year={2013} }'
  chicago: Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, Christoph Scheytt, and
    Chafik Meliani. “245 GHz Subharmonic Receiver in SiGe.” In <i>IEEE International
    Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. Seattle,
    Washington, 2013. <a href="https://doi.org/10.1109/MWSYM.2013.6697429">https://doi.org/10.1109/MWSYM.2013.6697429</a>.
  ieee: 'Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, and C. Meliani, “245 GHz Subharmonic
    Receiver in SiGe,” 2013, doi: <a href="https://doi.org/10.1109/MWSYM.2013.6697429">10.1109/MWSYM.2013.6697429</a>.'
  mla: Mao, Yanfei, et al. “245 GHz Subharmonic Receiver in SiGe.” <i>IEEE International
    Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>, 2013,
    doi:<a href="https://doi.org/10.1109/MWSYM.2013.6697429">10.1109/MWSYM.2013.6697429</a>.
  short: 'Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, C. Meliani, in: IEEE International
    Microwave Symposium, Advances in Low Noise Amplifiers and Receivers, Seattle,
    Washington, 2013.'
conference:
  end_date: 2013.06.07
  start_date: 2013.06.02
date_created: 2021-09-14T09:22:42Z
date_updated: 2022-02-17T09:23:50Z
department:
- _id: '58'
doi: 10.1109/MWSYM.2013.6697429
language:
- iso: eng
place: Seattle, Washington
publication: IEEE International Microwave Symposium, Advances in Low Noise Amplifiers
  and Receivers
publication_identifier:
  eisbn:
  - 978-1-4673-6176-7
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6697429
status: public
title: 245 GHz Subharmonic Receiver in SiGe
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24360'
author:
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: 'Scheytt C. Wireless 100Gb/s Using A Powerand. In: <i>IEEE International Conference
    on Communications</i>. ; 2013.'
  apa: Scheytt, C. (2013). Wireless 100Gb/s Using A Powerand. <i>IEEE International
    Conference on Communications</i>.
  bibtex: '@inproceedings{Scheytt_2013, place={Budapest}, title={Wireless 100Gb/s
    Using A Powerand}, booktitle={IEEE International Conference on Communications},
    author={Scheytt, Christoph}, year={2013} }'
  chicago: Scheytt, Christoph. “Wireless 100Gb/s Using A Powerand.” In <i>IEEE International
    Conference on Communications</i>. Budapest, 2013.
  ieee: C. Scheytt, “Wireless 100Gb/s Using A Powerand,” 2013.
  mla: Scheytt, Christoph. “Wireless 100Gb/s Using A Powerand.” <i>IEEE International
    Conference on Communications</i>, 2013.
  short: 'C. Scheytt, in: IEEE International Conference on Communications, Budapest,
    2013.'
date_created: 2021-09-14T09:22:40Z
date_updated: 2022-02-17T09:12:09Z
department:
- _id: '58'
language:
- iso: eng
place: Budapest
publication: IEEE International Conference on Communications
related_material:
  link:
  - relation: confirmation
    url: https://www.wireless100gb.de/publication/ICC2013-Panel_P5_Christoph_Scheytt.pdf
status: public
title: Wireless 100Gb/s Using A Powerand
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24359'
author:
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: Scheytt C. <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>.; 2013.
  apa: Scheytt, C. (2013). <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>.
  bibtex: '@book{Scheytt_2013, title={Hardware-Effizientes Mixed-Signal Entzerrfilter},
    author={Scheytt, Christoph}, year={2013} }'
  chicago: Scheytt, Christoph. <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>,
    2013.
  ieee: C. Scheytt, <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>. 2013.
  mla: Scheytt, Christoph. <i>Hardware-Effizientes Mixed-Signal Entzerrfilter</i>.
    2013.
  short: C. Scheytt, Hardware-Effizientes Mixed-Signal Entzerrfilter, 2013.
date_created: 2021-09-14T09:22:39Z
date_updated: 2022-02-17T09:09:43Z
department:
- _id: '58'
language:
- iso: eng
status: public
title: Hardware-Effizientes Mixed-Signal Entzerrfilter
type: misc
user_id: '15931'
year: '2013'
...
---
_id: '24339'
author:
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
- first_name: Yaoming
  full_name: Sun, Yaoming
  last_name: Sun
- first_name: Klaus
  full_name: Schmalz, Klaus
  last_name: Schmalz
- first_name: Yanfei
  full_name: Mao, Yanfei
  last_name: Mao
- first_name: Ruoyu
  full_name: Wang, Ruoyu
  last_name: Wang
- first_name: Wojciech
  full_name: Debski, Wojciech
  last_name: Debski
- first_name: Wolfgang
  full_name: Winkler, Wolfgang
  last_name: Winkler
citation:
  ama: 'Scheytt C, Sun Y, Schmalz K, et al. mm-Wave System-On-Chip Design in 0,13µm
    SiGe BiCMOS. In: <i>W 06 (EuMC &#38; EuMIC)</i>. ; 2013.'
  apa: Scheytt, C., Sun, Y., Schmalz, K., Mao, Y., Wang, R., Debski, W., &#38; Winkler,
    W. (2013). mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS. <i>W 06 (EuMC
    &#38; EuMIC)</i>.
  bibtex: '@inproceedings{Scheytt_Sun_Schmalz_Mao_Wang_Debski_Winkler_2013, place={Nürnberg
    Convention Center}, title={mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS},
    booktitle={W 06 (EuMC &#38; EuMIC)}, author={Scheytt, Christoph and Sun, Yaoming
    and Schmalz, Klaus and Mao, Yanfei and Wang, Ruoyu and Debski, Wojciech and Winkler,
    Wolfgang}, year={2013} }'
  chicago: Scheytt, Christoph, Yaoming Sun, Klaus Schmalz, Yanfei Mao, Ruoyu Wang,
    Wojciech Debski, and Wolfgang Winkler. “Mm-Wave System-On-Chip Design in 0,13µm
    SiGe BiCMOS.” In <i>W 06 (EuMC &#38; EuMIC)</i>. Nürnberg Convention Center, 2013.
  ieee: C. Scheytt <i>et al.</i>, “mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS,”
    2013.
  mla: Scheytt, Christoph, et al. “Mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS.”
    <i>W 06 (EuMC &#38; EuMIC)</i>, 2013.
  short: 'C. Scheytt, Y. Sun, K. Schmalz, Y. Mao, R. Wang, W. Debski, W. Winkler,
    in: W 06 (EuMC &#38; EuMIC), Nürnberg Convention Center, 2013.'
date_created: 2021-09-14T09:22:13Z
date_updated: 2022-01-10T10:46:14Z
department:
- _id: '58'
language:
- iso: eng
place: Nürnberg Convention Center
publication: W 06 (EuMC & EuMIC)
related_material:
  link:
  - relation: confirmation
    url: https://www.eumweek.com/archive/eumweek2013/2013/default.html
status: public
title: mm-Wave System-On-Chip Design in 0,13µm SiGe BiCMOS
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24344'
abstract:
- lang: eng
  text: In this paper, a novel 180°hybrid with different input frequencies is proposed
    to combine RF and local oscillator (LO) signals with different frequencies in
    a gate/base-pumped harmonic mixer. The detailed analysis and design procedures
    are presented in this paper. To further reduce the chip size, the multilayer metallization
    above the lossy silicon substrate is employed to implement the hybrid. A V-band
    down-converted 2× harmonic mixer in 90-nm CMOS process and a D-band down-converted
    4× harmonic mixer in the 130-nm SiGe process are designed, fabricated, and measured
    to verify the concept. The 2× harmonic mixer possesses 0-dB conversion gain at
    60 GHz with 0-dBm LO power with merely 2.4-mW dc power. The 4× harmonic mixer
    achieves 0.5-dB conversion gain at 120 GHz with 2-dBm LO power and 27.3-mW dc
    power. With the proposed reduced-size 180° hybrid, gate/base-pumped harmonic mixers
    are very attractive in transceivers demanding low LO frequency and power.
author:
- first_name: Jhe-Jia
  full_name: Kuo, Jhe-Jia
  last_name: Kuo
- first_name: Chun-Hsien
  full_name: Lien, Chun-Hsien
  last_name: Lien
- first_name: Zuo-Min
  full_name: Tsai, Zuo-Min
  last_name: Tsai
- first_name: Kun-You
  full_name: Lin, Kun-You
  last_name: Lin
- first_name: Klaus
  full_name: Schmalz, Klaus
  last_name: Schmalz
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
- first_name: Huei
  full_name: Wang, Huei
  last_name: Wang
citation:
  ama: Kuo J-J, Lien C-H, Tsai Z-M, et al. Design and Analysis of Down-Conversion
    Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With
    Different Input Frequencies . <i>Microwave Theory and Techniques, IEEE Transactions
    on</i>. 2013;60(8):2473-2485. doi:<a href="https://doi.org/10.1109/TMTT.2012.2202039">10.1109/TMTT.2012.2202039</a>
  apa: Kuo, J.-J., Lien, C.-H., Tsai, Z.-M., Lin, K.-Y., Schmalz, K., Scheytt, C.,
    &#38; Wang, H. (2013). Design and Analysis of Down-Conversion Gate/Base-Pumped
    Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With Different Input
    Frequencies . <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>60</i>(8),
    2473–2485. <a href="https://doi.org/10.1109/TMTT.2012.2202039">https://doi.org/10.1109/TMTT.2012.2202039</a>
  bibtex: '@article{Kuo_Lien_Tsai_Lin_Schmalz_Scheytt_Wang_2013, title={Design and
    Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using Novel Reduced-Size
    180 ^\circ Hybrid With Different Input Frequencies }, volume={60}, DOI={<a href="https://doi.org/10.1109/TMTT.2012.2202039">10.1109/TMTT.2012.2202039</a>},
    number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Kuo,
    Jhe-Jia and Lien, Chun-Hsien and Tsai, Zuo-Min and Lin, Kun-You and Schmalz, Klaus
    and Scheytt, Christoph and Wang, Huei}, year={2013}, pages={2473–2485} }'
  chicago: 'Kuo, Jhe-Jia, Chun-Hsien Lien, Zuo-Min Tsai, Kun-You Lin, Klaus Schmalz,
    Christoph Scheytt, and Huei Wang. “Design and Analysis of Down-Conversion Gate/Base-Pumped
    Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With Different Input
    Frequencies .” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 60,
    no. 8 (2013): 2473–85. <a href="https://doi.org/10.1109/TMTT.2012.2202039">https://doi.org/10.1109/TMTT.2012.2202039</a>.'
  ieee: 'J.-J. Kuo <i>et al.</i>, “Design and Analysis of Down-Conversion Gate/Base-Pumped
    Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With Different Input
    Frequencies ,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol.
    60, no. 8, pp. 2473–2485, 2013, doi: <a href="https://doi.org/10.1109/TMTT.2012.2202039">10.1109/TMTT.2012.2202039</a>.'
  mla: Kuo, Jhe-Jia, et al. “Design and Analysis of Down-Conversion Gate/Base-Pumped
    Harmonic Mixers Using Novel Reduced-Size 180 ^\circ Hybrid With Different Input
    Frequencies .” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol.
    60, no. 8, 2013, pp. 2473–85, doi:<a href="https://doi.org/10.1109/TMTT.2012.2202039">10.1109/TMTT.2012.2202039</a>.
  short: J.-J. Kuo, C.-H. Lien, Z.-M. Tsai, K.-Y. Lin, K. Schmalz, C. Scheytt, H.
    Wang, Microwave Theory and Techniques, IEEE Transactions On 60 (2013) 2473–2485.
date_created: 2021-09-14T09:22:19Z
date_updated: 2022-01-11T10:44:00Z
department:
- _id: '58'
doi: 10.1109/TMTT.2012.2202039
intvolume: '        60'
issue: '8'
language:
- iso: eng
page: 2473-2485
publication: Microwave Theory and Techniques, IEEE Transactions on
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6214582
status: public
title: 'Design and Analysis of Down-Conversion Gate/Base-Pumped Harmonic Mixers Using
  Novel Reduced-Size 180 ^\circ Hybrid With Different Input Frequencies '
type: journal_article
user_id: '15931'
volume: 60
year: '2013'
...
---
_id: '24343'
abstract:
- lang: ger
  text: 50 Jahre Moore‘s Gesetz ? „More Moore“ & „More than Moore“ ? Miniatur-Radar-System
    ? Silizium-Photonik für schnelle Kommunikation ? Photonischer Winkelsensor
author:
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: 'Scheytt C. Nano-/Mikroelektronik als Enabler für neue Ansätze. In: <i>HNI-Forum
    September </i>. ; 2013.'
  apa: Scheytt, C. (2013). Nano-/Mikroelektronik als Enabler für neue Ansätze. <i>HNI-Forum
    September </i>.
  bibtex: '@inproceedings{Scheytt_2013, place={HNI, Fürstenallee 11, 33102 Paderborn},
    title={Nano-/Mikroelektronik als Enabler für neue Ansätze}, booktitle={HNI-Forum
    September }, author={Scheytt, Christoph}, year={2013} }'
  chicago: Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.”
    In <i>HNI-Forum September </i>. HNI, Fürstenallee 11, 33102 Paderborn, 2013.
  ieee: C. Scheytt, “Nano-/Mikroelektronik als Enabler für neue Ansätze,” 2013.
  mla: Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.” <i>HNI-Forum
    September </i>, 2013.
  short: 'C. Scheytt, in: HNI-Forum September , HNI, Fürstenallee 11, 33102 Paderborn,
    2013.'
date_created: 2021-09-14T09:22:18Z
date_updated: 2022-01-11T10:42:53Z
department:
- _id: '58'
language:
- iso: eng
place: HNI, Fürstenallee 11, 33102 Paderborn
publication: 'HNI-Forum September '
status: public
title: Nano-/Mikroelektronik als Enabler für neue Ansätze
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24345'
author:
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: 'Scheytt C. RF-MST Cluster Workshop on MEMSWAVE 2013. In: <i>RF-MST Cluster
    Workshop on MEMSWAVE 2013</i>. ; 2013.'
  apa: Scheytt, C. (2013). RF-MST Cluster Workshop on MEMSWAVE 2013. <i>RF-MST Cluster
    Workshop on MEMSWAVE 2013</i>.
  bibtex: '@inproceedings{Scheytt_2013, title={RF-MST Cluster Workshop on MEMSWAVE
    2013}, booktitle={RF-MST Cluster Workshop on MEMSWAVE 2013}, author={Scheytt,
    Christoph}, year={2013} }'
  chicago: Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” In <i>RF-MST
    Cluster Workshop on MEMSWAVE 2013</i>, 2013.
  ieee: C. Scheytt, “RF-MST Cluster Workshop on MEMSWAVE 2013,” 2013.
  mla: Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” <i>RF-MST Cluster
    Workshop on MEMSWAVE 2013</i>, 2013.
  short: 'C. Scheytt, in: RF-MST Cluster Workshop on MEMSWAVE 2013, 2013.'
date_created: 2021-09-14T09:22:21Z
date_updated: 2022-01-11T10:52:51Z
department:
- _id: '58'
language:
- iso: eng
publication: RF-MST Cluster Workshop on MEMSWAVE 2013
related_material:
  link:
  - relation: confirmation
    url: https://www.enas.fraunhofer.de/content/dam/enas/Dokumente/Deutsch/News_Events/Konferenzen/MEMSWAVE_2013_first.pdf
status: public
title: RF-MST Cluster Workshop on MEMSWAVE 2013
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24340'
author:
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
- first_name: Rolf
  full_name: Kraemer, Rolf
  last_name: Kraemer
- first_name: Ingmar
  full_name: Kallfass, Ingmar
  last_name: Kallfass
citation:
  ama: 'Scheytt C, Kraemer R, Kallfass I. Strategies for Energy-Efficient 100 Gb/s
    Baseband. In: <i>W 19 (EuMC \&#38; EuMIC)</i>. ; 2013.'
  apa: Scheytt, C., Kraemer, R., &#38; Kallfass, I. (2013). Strategies for Energy-Efficient
    100 Gb/s Baseband. <i>W 19 (EuMC \&#38; EuMIC)</i>.
  bibtex: '@inproceedings{Scheytt_Kraemer_Kallfass_2013, place={Nürnberg Convention
    Center}, title={Strategies for Energy-Efficient 100 Gb/s Baseband}, booktitle={W
    19 (EuMC \&#38; EuMIC)}, author={Scheytt, Christoph and Kraemer, Rolf and Kallfass,
    Ingmar}, year={2013} }'
  chicago: Scheytt, Christoph, Rolf Kraemer, and Ingmar Kallfass. “Strategies for
    Energy-Efficient 100 Gb/s Baseband.” In <i>W 19 (EuMC \&#38; EuMIC)</i>. Nürnberg
    Convention Center, 2013.
  ieee: C. Scheytt, R. Kraemer, and I. Kallfass, “Strategies for Energy-Efficient
    100 Gb/s Baseband,” 2013.
  mla: Scheytt, Christoph, et al. “Strategies for Energy-Efficient 100 Gb/s Baseband.”
    <i>W 19 (EuMC \&#38; EuMIC)</i>, 2013.
  short: 'C. Scheytt, R. Kraemer, I. Kallfass, in: W 19 (EuMC \&#38; EuMIC), Nürnberg
    Convention Center, 2013.'
date_created: 2021-09-14T09:22:14Z
date_updated: 2022-01-10T11:36:56Z
department:
- _id: '58'
language:
- iso: eng
place: Nürnberg Convention Center
publication: W 19 (EuMC \& EuMIC)
related_material:
  link:
  - relation: confirmation
    url: https://www.eumweek.com/archive/eumweek2013/2013/docs/2013_conf_programme.pdf
status: public
title: Strategies for Energy-Efficient 100 Gb/s Baseband
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24341'
abstract:
- lang: eng
  text: This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe
    BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB
    of gain. A SP4T switch is integrated to select between the four outputs of the
    beamforming network. Finally, an amplifier used to compensate the losses of the
    SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA
    from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies
    1.5 × 2.4 mm 2 .
author:
- first_name: Mohamed
  full_name: Elkhouly, Mohamed
  last_name: Elkhouly
- first_name: Yanfei
  full_name: Mao, Yanfei
  last_name: Mao
- first_name: Chafik
  full_name: Meliani, Chafik
  last_name: Meliani
- first_name: Frank
  full_name: Ellinger, Frank
  last_name: Ellinger
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: 'Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 220-245 GHz Switched
    Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . In: <i>IEEE BIPOLAR / BiCMOS
    CIRCUITS AND TECHNOLOGY MEETING,</i>. ; 2013. doi:<a href="https://doi.org/10.1109/BCTM.2013.6798158">10.1109/BCTM.2013.6798158</a>'
  apa: Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013).
    A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . <i>IEEE
    BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. <a href="https://doi.org/10.1109/BCTM.2013.6798158">https://doi.org/10.1109/BCTM.2013.6798158</a>
  bibtex: '@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Bordeaux,
    France,}, title={A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS
    technology }, DOI={<a href="https://doi.org/10.1109/BCTM.2013.6798158">10.1109/BCTM.2013.6798158</a>},
    booktitle={IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}, author={Elkhouly,
    Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph},
    year={2013} }'
  chicago: Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph
    Scheytt. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology
    .” In <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>. Bordeaux,
    France, 2013. <a href="https://doi.org/10.1109/BCTM.2013.6798158">https://doi.org/10.1109/BCTM.2013.6798158</a>.
  ieee: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 220-245
    GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ,” 2013, doi:
    <a href="https://doi.org/10.1109/BCTM.2013.6798158">10.1109/BCTM.2013.6798158</a>.'
  mla: Elkhouly, Mohamed, et al. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm
    SiGe BiCMOS Technology .” <i>IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,</i>
    2013, doi:<a href="https://doi.org/10.1109/BCTM.2013.6798158">10.1109/BCTM.2013.6798158</a>.
  short: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: IEEE BIPOLAR
    / BiCMOS CIRCUITS AND TECHNOLOGY MEETING, Bordeaux, France, 2013.'
date_created: 2021-09-14T09:22:15Z
date_updated: 2022-01-11T09:20:48Z
department:
- _id: '58'
doi: 10.1109/BCTM.2013.6798158
language:
- iso: eng
place: Bordeaux, France,
publication: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,
related_material:
  link:
  - relation: confirmation
    url: https://ris.uni-paderborn.de/record/24341
status: public
title: 'A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology '
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24342'
abstract:
- lang: eng
  text: Two half-wavelength 122 GHz patch antennas were designed and manufactured
    by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer.
    It enables the full integration of the millimeter-wave transceiver circuits and
    the antennas on a single chip to simplify the packaging procedure at millimeter-wave
    frequencies, thereby reducing the cost. The two patch antennas are fed by different
    feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled
    feed. They exhibit similar performance and offer the flexibility of designing
    the interconnects (feed lines routing) between the circuits and the antennas within
    the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center
    frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency
    of about 50%.
author:
- first_name: Ruoyu
  full_name: Wang, Ruoyu
  last_name: Wang
- first_name: Mehmet
  full_name: Kaynak, Mehmet
  last_name: Kaynak
- first_name: Yaoming
  full_name: Sun, Yaoming
  last_name: Sun
- first_name: Johannes
  full_name: Borngräber, Johannes
  last_name: Borngräber
- first_name: Stefan
  full_name: Beer, Stefan
  last_name: Beer
- first_name: B.
  full_name: Goettel, B.
  last_name: Goettel
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: 'Wang R, Kaynak M, Sun Y, et al. 122 GHz Patch Antenna Designs by Using BCB
    Above SiGe BiCMOS wafer process for system-on-chip applications. In: <i>24th Annual
    IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>.
    ; 2013. doi:<a href="https://doi.org/10.1109/PIMRC.2013.6666358">10.1109/PIMRC.2013.6666358</a>'
  apa: Wang, R., Kaynak, M., Sun, Y., Borngräber, J., Beer, S., Goettel, B., &#38;
    Scheytt, C. (2013). 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS
    wafer process for system-on-chip applications. <i>24th Annual IEEE International
    Symposium on Personal, Indoor and Mobile Radio Communications</i>. <a href="https://doi.org/10.1109/PIMRC.2013.6666358">https://doi.org/10.1109/PIMRC.2013.6666358</a>
  bibtex: '@inproceedings{Wang_Kaynak_Sun_Borngräber_Beer_Goettel_Scheytt_2013, place={Hilton,
    London Metropole}, title={122 GHz Patch Antenna Designs by Using BCB Above SiGe
    BiCMOS wafer process for system-on-chip applications}, DOI={<a href="https://doi.org/10.1109/PIMRC.2013.6666358">10.1109/PIMRC.2013.6666358</a>},
    booktitle={24th Annual IEEE International Symposium on Personal, Indoor and Mobile
    Radio Communications}, author={Wang, Ruoyu and Kaynak, Mehmet and Sun, Yaoming
    and Borngräber, Johannes and Beer, Stefan and Goettel, B. and Scheytt, Christoph},
    year={2013} }'
  chicago: Wang, Ruoyu, Mehmet Kaynak, Yaoming Sun, Johannes Borngräber, Stefan Beer,
    B. Goettel, and Christoph Scheytt. “122 GHz Patch Antenna Designs by Using BCB
    Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” In <i>24th Annual
    IEEE International Symposium on Personal, Indoor and Mobile Radio Communications</i>.
    Hilton, London Metropole, 2013. <a href="https://doi.org/10.1109/PIMRC.2013.6666358">https://doi.org/10.1109/PIMRC.2013.6666358</a>.
  ieee: 'R. Wang <i>et al.</i>, “122 GHz Patch Antenna Designs by Using BCB Above
    SiGe BiCMOS wafer process for system-on-chip applications,” 2013, doi: <a href="https://doi.org/10.1109/PIMRC.2013.6666358">10.1109/PIMRC.2013.6666358</a>.'
  mla: Wang, Ruoyu, et al. “122 GHz Patch Antenna Designs by Using BCB Above SiGe
    BiCMOS Wafer Process for System-on-Chip Applications.” <i>24th Annual IEEE International
    Symposium on Personal, Indoor and Mobile Radio Communications</i>, 2013, doi:<a
    href="https://doi.org/10.1109/PIMRC.2013.6666358">10.1109/PIMRC.2013.6666358</a>.
  short: 'R. Wang, M. Kaynak, Y. Sun, J. Borngräber, S. Beer, B. Goettel, C. Scheytt,
    in: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio
    Communications, Hilton, London Metropole, 2013.'
conference:
  end_date: 11.09.2013
  start_date: 08.09.2013
date_created: 2021-09-14T09:22:17Z
date_updated: 2022-01-11T10:29:40Z
department:
- _id: '58'
doi: 10.1109/PIMRC.2013.6666358
language:
- iso: eng
place: Hilton, London Metropole
publication: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile
  Radio Communications
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6666358
status: public
title: 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process
  for system-on-chip applications
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24347'
abstract:
- lang: eng
  text: In this paper, an integrated dielectric sensor with a read-out circuit in
    an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists
    of a 500-μm shorted half-wave coplanar-waveguide transmission line in the uppermost
    metal layer of the silicon process, while the read-out is obtained by reflection
    coefficient measurement with an integrated reflectometer and a signal source.
    The reflectometer is verified with a circuit breakout including an integrated
    dummy sensor. The reflectometer is able to measure the phase of the reflection
    coefficient from 117 to 134 GHz with a resolution of 0.1° and a standard deviation
    of 0.082°. The integrated sensor with the reflectometer circuit have been fabricated
    in a 190-GHz fT SiGe:C BiCMOS technology. It spans an area of 1.4 mm 2 and consumes
    75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit
    board for characterization by immersion into test liquids. The sensor is controlled
    by a controller board and a personal computer enabling a measurement time of up
    to 1 ms per frequency point. Functionality of the sensor is demonstrated from
    118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol
    mixtures, showing good correlation between theory and measurement. The sensor
    shows a standard deviation of the measured phase of 0.220° and is able to detect
    a difference in ε' r of 0.0125
author:
- first_name: Benjamin
  full_name: Laemmle, Benjamin
  last_name: Laemmle
- first_name: Klaus
  full_name: Schmalz, Klaus
  last_name: Schmalz
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
- first_name: Robert
  full_name: Weigel, Robert
  last_name: Weigel
- first_name: Dietmar
  full_name: Kissinger, Dietmar
  last_name: Kissinger
citation:
  ama: Laemmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D. A 125-GHz Permittivity
    Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. <i>Microwave
    Theory and Techniques, IEEE Transactions on</i>. 2013;61(5):2185-2194. doi:<a
    href="https://doi.org/10.1109/TMTT.2013.2253792">10.1109/TMTT.2013.2253792</a>
  apa: Laemmle, B., Schmalz, K., Scheytt, C., Weigel, R., &#38; Kissinger, D. (2013).
    A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology.
    <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>61</i>(5), 2185–2194.
    <a href="https://doi.org/10.1109/TMTT.2013.2253792">https://doi.org/10.1109/TMTT.2013.2253792</a>
  bibtex: '@article{Laemmle_Schmalz_Scheytt_Weigel_Kissinger_2013, title={A 125-GHz
    Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology},
    volume={61}, DOI={<a href="https://doi.org/10.1109/TMTT.2013.2253792">10.1109/TMTT.2013.2253792</a>},
    number={5}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Laemmle,
    Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger,
    Dietmar}, year={2013}, pages={2185–2194} }'
  chicago: 'Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Robert Weigel, and
    Dietmar Kissinger. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm
    SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions
    On</i> 61, no. 5 (2013): 2185–94. <a href="https://doi.org/10.1109/TMTT.2013.2253792">https://doi.org/10.1109/TMTT.2013.2253792</a>.'
  ieee: 'B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, and D. Kissinger, “A 125-GHz
    Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology,”
    <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 61, no. 5,
    pp. 2185–2194, 2013, doi: <a href="https://doi.org/10.1109/TMTT.2013.2253792">10.1109/TMTT.2013.2253792</a>.'
  mla: Laemmle, Benjamin, et al. “A 125-GHz Permittivity Sensor With Read-Out Circuit
    in a 250-Nm SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE
    Transactions On</i>, vol. 61, no. 5, 2013, pp. 2185–94, doi:<a href="https://doi.org/10.1109/TMTT.2013.2253792">10.1109/TMTT.2013.2253792</a>.
  short: B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, D. Kissinger, Microwave Theory
    and Techniques, IEEE Transactions On 61 (2013) 2185–2194.
date_created: 2021-09-14T09:22:23Z
date_updated: 2022-01-18T10:15:31Z
department:
- _id: '58'
doi: 10.1109/TMTT.2013.2253792
intvolume: '        61'
issue: '5'
language:
- iso: eng
page: 2185-2194
publication: Microwave Theory and Techniques, IEEE Transactions on
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6492143
status: public
title: A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS
  Technology
type: journal_article
user_id: '15931'
volume: 61
year: '2013'
...
---
_id: '24348'
author:
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
- first_name: Günter
  full_name: Grau, Günter
  last_name: Grau
citation:
  ama: 'Scheytt C, Grau G. Neue Ansätze für miniaturisierte, hochintegrierte Abstands-,
    Geschwindigkeits- und Drehwinkelsensoren. In: <i>Wissenschaftsforum 2013, Intelligente
    Technische Systeme, Heinz Nixdorf Institut</i>. ; 2013.'
  apa: Scheytt, C., &#38; Grau, G. (2013). Neue Ansätze für miniaturisierte, hochintegrierte
    Abstands-, Geschwindigkeits- und Drehwinkelsensoren. <i>Wissenschaftsforum 2013,
    Intelligente Technische Systeme, Heinz Nixdorf Institut</i>.
  bibtex: '@inproceedings{Scheytt_Grau_2013, place={Heinz Nixdorf MuseumsForum Paderborn,
    Germany}, title={Neue Ansätze für miniaturisierte, hochintegrierte Abstands-,
    Geschwindigkeits- und Drehwinkelsensoren}, booktitle={Wissenschaftsforum 2013,
    Intelligente Technische Systeme, Heinz Nixdorf Institut}, author={Scheytt, Christoph
    and Grau, Günter}, year={2013} }'
  chicago: Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte,
    Hochintegrierte Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” In <i>Wissenschaftsforum
    2013, Intelligente Technische Systeme, Heinz Nixdorf Institut</i>. Heinz Nixdorf
    MuseumsForum Paderborn, Germany, 2013.
  ieee: C. Scheytt and G. Grau, “Neue Ansätze für miniaturisierte, hochintegrierte
    Abstands-, Geschwindigkeits- und Drehwinkelsensoren,” 2013.
  mla: Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte, Hochintegrierte
    Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” <i>Wissenschaftsforum 2013,
    Intelligente Technische Systeme, Heinz Nixdorf Institut</i>, 2013.
  short: 'C. Scheytt, G. Grau, in: Wissenschaftsforum 2013, Intelligente Technische
    Systeme, Heinz Nixdorf Institut, Heinz Nixdorf MuseumsForum Paderborn, Germany,
    2013.'
date_created: 2021-09-14T09:22:24Z
date_updated: 2022-01-18T10:17:43Z
department:
- _id: '58'
language:
- iso: eng
place: Heinz Nixdorf MuseumsForum Paderborn, Germany
publication: Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf
  Institut
related_material:
  link:
  - relation: confirmation
    url: https://docplayer.org/42941783-Wissenschaftsforum-programm-und-einladung-wissenschaftsforum-intelligente-technische-systeme.htm
status: public
title: Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits-
  und Drehwinkelsensoren
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24346'
author:
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: 'Scheytt C. Introduction to Integrated mm‐Wave Sensors. In: <i>System, IC and
    Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>.
    ; 2013.'
  apa: Scheytt, C. (2013). Introduction to Integrated mm‐Wave Sensors. <i>System,
    IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>.
  bibtex: '@inproceedings{Scheytt_2013, place={Karlsruhe, Germany}, title={Introduction
    to Integrated mm‐Wave Sensors}, booktitle={System, IC and Integrated Antenna Design
    for Miniaturized, Millimeter-wave Radar Sensors}, author={Scheytt, Christoph},
    year={2013} }'
  chicago: Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” In <i>System,
    IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>.
    Karlsruhe, Germany, 2013.
  ieee: C. Scheytt, “Introduction to Integrated mm‐Wave Sensors,” 2013.
  mla: Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” <i>System,
    IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors</i>,
    2013.
  short: 'C. Scheytt, in: System, IC and Integrated Antenna Design for Miniaturized,
    Millimeter-Wave Radar Sensors, Karlsruhe, Germany, 2013.'
date_created: 2021-09-14T09:22:22Z
date_updated: 2022-01-18T10:14:15Z
department:
- _id: '58'
language:
- iso: eng
place: Karlsruhe, Germany
publication: System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave
  Radar Sensors
status: public
title: Introduction to Integrated mm‐Wave Sensors
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24350'
abstract:
- lang: eng
  text: This paper describes the design of D-band phased-array circuits in 0.25 μm
    technology. The first part describes the design of the passive components which
    are used in the phased-array systems such as balun, Wilkinson divider and branch-line
    coupler. A millimeter-wave vector-modulator is designed to support both amplitude
    and phase control for beam-forming applications. In the second part the designed
    circuits are integrated together to form a two channel 110-130 GHz phased-array
    chip. Each channel exhibits 360° phase control with 15 dB of amplitude control
    range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave
    phase shifting and the low-power consumption makes it ideal for highly integrated
    scalable beam-forming systems for both imaging and communication.
author:
- first_name: Mohamed
  full_name: Elkhouly, Mohamed
  last_name: Elkhouly
- first_name: Srdjan
  full_name: Glisic, Srdjan
  last_name: Glisic
- first_name: Chafik
  full_name: Meliani, Chafik
  last_name: Meliani
- first_name: Frank
  full_name: Ellinger, Frank
  last_name: Ellinger
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: Elkhouly M, Glisic S, Meliani C, Ellinger F, Scheytt C. 220–250-GHz Phased-Array
    Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology. <i>Microwave Theory and Techniques,
    IEEE Transactions on</i>. 2013;PP(99):1-13. doi:<a href="https://doi.org/10.1109/TMTT.2013.2258032">10.1109/TMTT.2013.2258032</a>
  apa: Elkhouly, M., Glisic, S., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013).
    220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology.
    <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>PP</i>(99), 1–13.
    <a href="https://doi.org/10.1109/TMTT.2013.2258032">https://doi.org/10.1109/TMTT.2013.2258032</a>
  bibtex: '@article{Elkhouly_Glisic_Meliani_Ellinger_Scheytt_2013, title={220–250-GHz
    Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology}, volume={PP},
    DOI={<a href="https://doi.org/10.1109/TMTT.2013.2258032">10.1109/TMTT.2013.2258032</a>},
    number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on},
    author={Elkhouly, Mohamed and Glisic, Srdjan and Meliani, Chafik and Ellinger,
    Frank and Scheytt, Christoph}, year={2013}, pages={1–13} }'
  chicago: 'Elkhouly, Mohamed, Srdjan Glisic, Chafik Meliani, Frank Ellinger, and
    Christoph Scheytt. “220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe
    BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>
    PP, no. 99 (2013): 1–13. <a href="https://doi.org/10.1109/TMTT.2013.2258032">https://doi.org/10.1109/TMTT.2013.2258032</a>.'
  ieee: 'M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, and C. Scheytt, “220–250-GHz
    Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology,” <i>Microwave
    Theory and Techniques, IEEE Transactions on</i>, vol. PP, no. 99, pp. 1–13, 2013,
    doi: <a href="https://doi.org/10.1109/TMTT.2013.2258032">10.1109/TMTT.2013.2258032</a>.'
  mla: Elkhouly, Mohamed, et al. “220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox
    m SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions
    On</i>, vol. PP, no. 99, 2013, pp. 1–13, doi:<a href="https://doi.org/10.1109/TMTT.2013.2258032">10.1109/TMTT.2013.2258032</a>.
  short: M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, C. Scheytt, Microwave Theory
    and Techniques, IEEE Transactions On PP (2013) 1–13.
date_created: 2021-09-14T09:22:27Z
date_updated: 2022-01-18T10:25:50Z
department:
- _id: '58'
doi: 10.1109/TMTT.2013.2258032
issue: '99'
language:
- iso: eng
page: 1-13
publication: Microwave Theory and Techniques, IEEE Transactions on
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6507360
status: public
title: 220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology
type: journal_article
user_id: '15931'
volume: PP
year: '2013'
...
---
_id: '24352'
abstract:
- lang: eng
  text: "This paper analyses substrate-related spurious tones in fractional-N phase-\r\nlocked
    loops with integrated VCOs. Spur positions are calculated and experimentally\r\nverified
    as a function of the divider ratios of prescaler and programmable divider.\r\nFor
    an integrated wideband PLL in SiGe BiCMOS technology the spur power levels\r\nare
    measured and compared with theoretical expectations. The power in these spurs
    is\r\nminimized by layout techniques shielding the reference input buffer. Spur
    minimization\r\nby using a variable reference frequency is experimentally demonstrated.
    Based on this\r\nobservation, a programmable integer-N PLL for driving the fractional-N
    synthesizer is\r\nsuggested to reduce the worst-case spur level significantly.\r\nIndex
    Terms — Fractional-N, frequency synthesizers, fractional spurs, substrate\r\nspurs,
    phase-locked loops (PLLs), phase noise.\r\n"
author:
- first_name: Sabbir Ahmed
  full_name: Osmany, Sabbir Ahmed
  last_name: Osmany
- first_name: Frank
  full_name: Herzel, Frank
  last_name: Herzel
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
citation:
  ama: Osmany SA, Herzel F, Scheytt C. Analysis and minimization of substrate spurs
    in fractional-N frequency synthesizers. <i>Analog Integrated Circuits and Signal
    Processing</i>. 2013;74(3):545-556. doi:<a href="https://doi.org/10.1007/s10470-012-0002-x">10.1007/s10470-012-0002-x</a>
  apa: Osmany, S. A., Herzel, F., &#38; Scheytt, C. (2013). Analysis and minimization
    of substrate spurs in fractional-N frequency synthesizers. <i>Analog Integrated
    Circuits and Signal Processing</i>, <i>74</i>(3), 545–556. <a href="https://doi.org/10.1007/s10470-012-0002-x">https://doi.org/10.1007/s10470-012-0002-x</a>
  bibtex: '@article{Osmany_Herzel_Scheytt_2013, title={Analysis and minimization of
    substrate spurs in fractional-N frequency synthesizers}, volume={74}, DOI={<a
    href="https://doi.org/10.1007/s10470-012-0002-x">10.1007/s10470-012-0002-x</a>},
    number={3}, journal={Analog Integrated Circuits and Signal Processing}, author={Osmany,
    Sabbir Ahmed and Herzel, Frank and Scheytt, Christoph}, year={2013}, pages={545–556}
    }'
  chicago: 'Osmany, Sabbir Ahmed, Frank Herzel, and Christoph Scheytt. “Analysis and
    Minimization of Substrate Spurs in Fractional-N Frequency Synthesizers.” <i>Analog
    Integrated Circuits and Signal Processing</i> 74, no. 3 (2013): 545–56. <a href="https://doi.org/10.1007/s10470-012-0002-x">https://doi.org/10.1007/s10470-012-0002-x</a>.'
  ieee: 'S. A. Osmany, F. Herzel, and C. Scheytt, “Analysis and minimization of substrate
    spurs in fractional-N frequency synthesizers,” <i>Analog Integrated Circuits and
    Signal Processing</i>, vol. 74, no. 3, pp. 545–556, 2013, doi: <a href="https://doi.org/10.1007/s10470-012-0002-x">10.1007/s10470-012-0002-x</a>.'
  mla: Osmany, Sabbir Ahmed, et al. “Analysis and Minimization of Substrate Spurs
    in Fractional-N Frequency Synthesizers.” <i>Analog Integrated Circuits and Signal
    Processing</i>, vol. 74, no. 3, 2013, pp. 545–56, doi:<a href="https://doi.org/10.1007/s10470-012-0002-x">10.1007/s10470-012-0002-x</a>.
  short: S.A. Osmany, F. Herzel, C. Scheytt, Analog Integrated Circuits and Signal
    Processing 74 (2013) 545–556.
date_created: 2021-09-14T09:22:30Z
date_updated: 2022-01-18T10:29:31Z
department:
- _id: '58'
doi: 10.1007/s10470-012-0002-x
intvolume: '        74'
issue: '3'
language:
- iso: eng
page: 545-556
publication: Analog Integrated Circuits and Signal Processing
related_material:
  link:
  - relation: confirmation
    url: https://www.researchgate.net/publication/233895658_Analysis_and_minimization_of_substrate_spurs_in_fractional-N_frequency_synthesizers
status: public
title: Analysis and minimization of substrate spurs in fractional-N frequency synthesizers
type: journal_article
user_id: '15931'
volume: 74
year: '2013'
...
---
_id: '24349'
abstract:
- lang: eng
  text: This paper presents the packaging technology and the integrated antenna design
    for a miniaturized 122-GHz radar sensor. The package layout and the assembly process
    are shortly explained. Measurements of the antenna including the flip chip interconnect
    are presented that have been achieved by replacing the IC with a dummy chip that
    only contains a through-line. Afterwards, radiation pattern measurements are shown
    that were recorded using the radar sensor as transmitter. Finally, details of
    the fully integrated radar sensor are given, together with results of the first
    Doppler measurements.
author:
- first_name: Stefan
  full_name: Beer, Stefan
  last_name: Beer
- first_name: Mekdes Gebresilassie
  full_name: Girma, Mekdes Gebresilassie
  last_name: Girma
- first_name: Yaoming
  full_name: Sun, Yaoming
  last_name: Sun
- first_name: Wolfgang
  full_name: Winkler, Wolfgang
  last_name: Winkler
- first_name: Wojciech
  full_name: Debski, Wojciech
  last_name: Debski
- first_name: Jaska
  full_name: Paaso, Jaska
  last_name: Paaso
- first_name: Gerhard
  full_name: Kunkel, Gerhard
  last_name: Kunkel
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
- first_name: Jürgen
  full_name: Hasch, Jürgen
  last_name: Hasch
- first_name: Thomas
  full_name: Zwick, Thomas
  last_name: Zwick
citation:
  ama: 'Beer S, Girma MG, Sun Y, et al. Flip-Chip Package with Integrated Antenna
    on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. In: <i>7th EUROPEAN
    CONFERENCE ON ANTENNAS AND PROPAGATION</i>. ; 2013.'
  apa: Beer, S., Girma, M. G., Sun, Y., Winkler, W., Debski, W., Paaso, J., Kunkel,
    G., Scheytt, C., Hasch, J., &#38; Zwick, T. (2013). Flip-Chip Package with Integrated
    Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. <i>7th EUROPEAN
    CONFERENCE ON ANTENNAS AND PROPAGATION</i>.
  bibtex: '@inproceedings{Beer_Girma_Sun_Winkler_Debski_Paaso_Kunkel_Scheytt_Hasch_Zwick_2013,
    place={Gothenburg, Sweden}, title={Flip-Chip Package with Integrated Antenna on
    a Polyimide Substrate for a 122-GHz Bistatic Radar IC}, booktitle={7th EUROPEAN
    CONFERENCE ON ANTENNAS AND PROPAGATION}, author={Beer, Stefan and Girma, Mekdes
    Gebresilassie and Sun, Yaoming and Winkler, Wolfgang and Debski, Wojciech and
    Paaso, Jaska and Kunkel, Gerhard and Scheytt, Christoph and Hasch, Jürgen and
    Zwick, Thomas}, year={2013} }'
  chicago: Beer, Stefan, Mekdes Gebresilassie Girma, Yaoming Sun, Wolfgang Winkler,
    Wojciech Debski, Jaska Paaso, Gerhard Kunkel, Christoph Scheytt, Jürgen Hasch,
    and Thomas Zwick. “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate
    for a 122-GHz Bistatic Radar IC.” In <i>7th EUROPEAN CONFERENCE ON ANTENNAS AND
    PROPAGATION</i>. Gothenburg, Sweden, 2013.
  ieee: S. Beer <i>et al.</i>, “Flip-Chip Package with Integrated Antenna on a Polyimide
    Substrate for a 122-GHz Bistatic Radar IC,” 2013.
  mla: Beer, Stefan, et al. “Flip-Chip Package with Integrated Antenna on a Polyimide
    Substrate for a 122-GHz Bistatic Radar IC.” <i>7th EUROPEAN CONFERENCE ON ANTENNAS
    AND PROPAGATION</i>, 2013.
  short: 'S. Beer, M.G. Girma, Y. Sun, W. Winkler, W. Debski, J. Paaso, G. Kunkel,
    C. Scheytt, J. Hasch, T. Zwick, in: 7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION,
    Gothenburg, Sweden, 2013.'
date_created: 2021-09-14T09:22:26Z
date_updated: 2022-01-18T10:23:24Z
department:
- _id: '58'
language:
- iso: eng
place: Gothenburg, Sweden
publication: 7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION
publication_identifier:
  eisbn:
  - 978-88-907018-3-2
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6546229
status: public
title: Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz
  Bistatic Radar IC
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24351'
abstract:
- lang: eng
  text: We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical
    and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology,
    enables error-free data recovery of heavily distorted signals transmitted at a
    bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer
    reported yet utilizes a novel 1-tap look-ahead architecture.
author:
- first_name: Lothar
  full_name: Möller, Lothar
  last_name: Möller
- first_name: Ahmed
  full_name: Awny, Ahmed
  last_name: Awny
- first_name: Josef
  full_name: Junio, Josef
  last_name: Junio
- first_name: Christoph
  full_name: Scheytt, Christoph
  id: '37144'
  last_name: Scheytt
  orcid: https://orcid.org/0000-0002-5950-6618
- first_name: Andreas
  full_name: Thiede, Andreas
  id: '538'
  last_name: Thiede
citation:
  ama: 'Möller L, Awny A, Junio J, Scheytt C, Thiede A. 80 Gb/s Decision Feedback
    Equalizer for Intersymbol Interference. In: <i>Optical Fiber Communication Conference</i>.
    ; 2013. doi:<a href="https://doi.org/10.1364/OFC.2013.OW4B.2 ">10.1364/OFC.2013.OW4B.2
    </a>'
  apa: Möller, L., Awny, A., Junio, J., Scheytt, C., &#38; Thiede, A. (2013). 80 Gb/s
    Decision Feedback Equalizer for Intersymbol Interference. <i>Optical Fiber Communication
    Conference</i>. <a href="https://doi.org/10.1364/OFC.2013.OW4B.2 ">https://doi.org/10.1364/OFC.2013.OW4B.2
    </a>
  bibtex: '@inproceedings{Möller_Awny_Junio_Scheytt_Thiede_2013, place={Anaheim, California
    United States}, title={80 Gb/s Decision Feedback Equalizer for Intersymbol Interference},
    DOI={<a href="https://doi.org/10.1364/OFC.2013.OW4B.2 ">10.1364/OFC.2013.OW4B.2
    </a>}, booktitle={Optical Fiber Communication Conference}, author={Möller, Lothar
    and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas},
    year={2013} }'
  chicago: Möller, Lothar, Ahmed Awny, Josef Junio, Christoph Scheytt, and Andreas
    Thiede. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” In
    <i>Optical Fiber Communication Conference</i>. Anaheim, California United States,
    2013. <a href="https://doi.org/10.1364/OFC.2013.OW4B.2 ">https://doi.org/10.1364/OFC.2013.OW4B.2
    </a>.
  ieee: 'L. Möller, A. Awny, J. Junio, C. Scheytt, and A. Thiede, “80 Gb/s Decision
    Feedback Equalizer for Intersymbol Interference,” 2013, doi: <a href="https://doi.org/10.1364/OFC.2013.OW4B.2
    ">10.1364/OFC.2013.OW4B.2 </a>.'
  mla: Möller, Lothar, et al. “80 Gb/s Decision Feedback Equalizer for Intersymbol
    Interference.” <i>Optical Fiber Communication Conference</i>, 2013, doi:<a href="https://doi.org/10.1364/OFC.2013.OW4B.2
    ">10.1364/OFC.2013.OW4B.2 </a>.
  short: 'L. Möller, A. Awny, J. Junio, C. Scheytt, A. Thiede, in: Optical Fiber Communication
    Conference, Anaheim, California United States, 2013.'
date_created: 2021-09-14T09:22:28Z
date_updated: 2023-01-25T11:03:26Z
department:
- _id: '58'
- _id: '51'
doi: '10.1364/OFC.2013.OW4B.2 '
language:
- iso: eng
place: Anaheim, California United States
publication: Optical Fiber Communication Conference
related_material:
  link:
  - relation: confirmation
    url: https://ieeexplore.ieee.org/document/6533180
status: public
title: 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference
type: conference
user_id: '158'
year: '2013'
...