---
_id: '24343'
abstract:
- lang: ger
text: 50 Jahre Moore‘s Gesetz ? „More Moore“ & „More than Moore“ ? Miniatur-Radar-System
? Silizium-Photonik für schnelle Kommunikation ? Photonischer Winkelsensor
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Scheytt C. Nano-/Mikroelektronik als Enabler für neue Ansätze. In: HNI-Forum
September . ; 2013.'
apa: Scheytt, C. (2013). Nano-/Mikroelektronik als Enabler für neue Ansätze. HNI-Forum
September .
bibtex: '@inproceedings{Scheytt_2013, place={HNI, Fürstenallee 11, 33102 Paderborn},
title={Nano-/Mikroelektronik als Enabler für neue Ansätze}, booktitle={HNI-Forum
September }, author={Scheytt, Christoph}, year={2013} }'
chicago: Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.”
In HNI-Forum September . HNI, Fürstenallee 11, 33102 Paderborn, 2013.
ieee: C. Scheytt, “Nano-/Mikroelektronik als Enabler für neue Ansätze,” 2013.
mla: Scheytt, Christoph. “Nano-/Mikroelektronik Als Enabler Für Neue Ansätze.” HNI-Forum
September , 2013.
short: 'C. Scheytt, in: HNI-Forum September , HNI, Fürstenallee 11, 33102 Paderborn,
2013.'
date_created: 2021-09-14T09:22:18Z
date_updated: 2022-01-11T10:42:53Z
department:
- _id: '58'
language:
- iso: eng
place: HNI, Fürstenallee 11, 33102 Paderborn
publication: 'HNI-Forum September '
status: public
title: Nano-/Mikroelektronik als Enabler für neue Ansätze
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24345'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Scheytt C. RF-MST Cluster Workshop on MEMSWAVE 2013. In: RF-MST Cluster
Workshop on MEMSWAVE 2013. ; 2013.'
apa: Scheytt, C. (2013). RF-MST Cluster Workshop on MEMSWAVE 2013. RF-MST Cluster
Workshop on MEMSWAVE 2013.
bibtex: '@inproceedings{Scheytt_2013, title={RF-MST Cluster Workshop on MEMSWAVE
2013}, booktitle={RF-MST Cluster Workshop on MEMSWAVE 2013}, author={Scheytt,
Christoph}, year={2013} }'
chicago: Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” In RF-MST
Cluster Workshop on MEMSWAVE 2013, 2013.
ieee: C. Scheytt, “RF-MST Cluster Workshop on MEMSWAVE 2013,” 2013.
mla: Scheytt, Christoph. “RF-MST Cluster Workshop on MEMSWAVE 2013.” RF-MST Cluster
Workshop on MEMSWAVE 2013, 2013.
short: 'C. Scheytt, in: RF-MST Cluster Workshop on MEMSWAVE 2013, 2013.'
date_created: 2021-09-14T09:22:21Z
date_updated: 2022-01-11T10:52:51Z
department:
- _id: '58'
language:
- iso: eng
publication: RF-MST Cluster Workshop on MEMSWAVE 2013
related_material:
link:
- relation: confirmation
url: https://www.enas.fraunhofer.de/content/dam/enas/Dokumente/Deutsch/News_Events/Konferenzen/MEMSWAVE_2013_first.pdf
status: public
title: RF-MST Cluster Workshop on MEMSWAVE 2013
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24340'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Rolf
full_name: Kraemer, Rolf
last_name: Kraemer
- first_name: Ingmar
full_name: Kallfass, Ingmar
last_name: Kallfass
citation:
ama: 'Scheytt C, Kraemer R, Kallfass I. Strategies for Energy-Efficient 100 Gb/s
Baseband. In: W 19 (EuMC \& EuMIC). ; 2013.'
apa: Scheytt, C., Kraemer, R., & Kallfass, I. (2013). Strategies for Energy-Efficient
100 Gb/s Baseband. W 19 (EuMC \& EuMIC).
bibtex: '@inproceedings{Scheytt_Kraemer_Kallfass_2013, place={Nürnberg Convention
Center}, title={Strategies for Energy-Efficient 100 Gb/s Baseband}, booktitle={W
19 (EuMC \& EuMIC)}, author={Scheytt, Christoph and Kraemer, Rolf and Kallfass,
Ingmar}, year={2013} }'
chicago: Scheytt, Christoph, Rolf Kraemer, and Ingmar Kallfass. “Strategies for
Energy-Efficient 100 Gb/s Baseband.” In W 19 (EuMC \& EuMIC). Nürnberg
Convention Center, 2013.
ieee: C. Scheytt, R. Kraemer, and I. Kallfass, “Strategies for Energy-Efficient
100 Gb/s Baseband,” 2013.
mla: Scheytt, Christoph, et al. “Strategies for Energy-Efficient 100 Gb/s Baseband.”
W 19 (EuMC \& EuMIC), 2013.
short: 'C. Scheytt, R. Kraemer, I. Kallfass, in: W 19 (EuMC \& EuMIC), Nürnberg
Convention Center, 2013.'
date_created: 2021-09-14T09:22:14Z
date_updated: 2022-01-10T11:36:56Z
department:
- _id: '58'
language:
- iso: eng
place: Nürnberg Convention Center
publication: W 19 (EuMC \& EuMIC)
related_material:
link:
- relation: confirmation
url: https://www.eumweek.com/archive/eumweek2013/2013/docs/2013_conf_programme.pdf
status: public
title: Strategies for Energy-Efficient 100 Gb/s Baseband
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24341'
abstract:
- lang: eng
text: This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe
BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB
of gain. A SP4T switch is integrated to select between the four outputs of the
beamforming network. Finally, an amplifier used to compensate the losses of the
SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA
from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies
1.5 × 2.4 mm 2 .
author:
- first_name: Mohamed
full_name: Elkhouly, Mohamed
last_name: Elkhouly
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Chafik
full_name: Meliani, Chafik
last_name: Meliani
- first_name: Frank
full_name: Ellinger, Frank
last_name: Ellinger
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 220-245 GHz Switched
Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . In: IEEE BIPOLAR / BiCMOS
CIRCUITS AND TECHNOLOGY MEETING,. ; 2013. doi:10.1109/BCTM.2013.6798158'
apa: Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., & Scheytt, C. (2013).
A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . IEEE
BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. https://doi.org/10.1109/BCTM.2013.6798158
bibtex: '@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Bordeaux,
France,}, title={A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS
technology }, DOI={10.1109/BCTM.2013.6798158},
booktitle={IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}, author={Elkhouly,
Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph},
year={2013} }'
chicago: Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph
Scheytt. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology
.” In IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. Bordeaux,
France, 2013. https://doi.org/10.1109/BCTM.2013.6798158.
ieee: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 220-245
GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ,” 2013, doi:
10.1109/BCTM.2013.6798158.'
mla: Elkhouly, Mohamed, et al. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm
SiGe BiCMOS Technology .” IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,
2013, doi:10.1109/BCTM.2013.6798158.
short: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: IEEE BIPOLAR
/ BiCMOS CIRCUITS AND TECHNOLOGY MEETING, Bordeaux, France, 2013.'
date_created: 2021-09-14T09:22:15Z
date_updated: 2022-01-11T09:20:48Z
department:
- _id: '58'
doi: 10.1109/BCTM.2013.6798158
language:
- iso: eng
place: Bordeaux, France,
publication: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,
related_material:
link:
- relation: confirmation
url: https://ris.uni-paderborn.de/record/24341
status: public
title: 'A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology '
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24342'
abstract:
- lang: eng
text: Two half-wavelength 122 GHz patch antennas were designed and manufactured
by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer.
It enables the full integration of the millimeter-wave transceiver circuits and
the antennas on a single chip to simplify the packaging procedure at millimeter-wave
frequencies, thereby reducing the cost. The two patch antennas are fed by different
feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled
feed. They exhibit similar performance and offer the flexibility of designing
the interconnects (feed lines routing) between the circuits and the antennas within
the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center
frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency
of about 50%.
author:
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
- first_name: Mehmet
full_name: Kaynak, Mehmet
last_name: Kaynak
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Stefan
full_name: Beer, Stefan
last_name: Beer
- first_name: B.
full_name: Goettel, B.
last_name: Goettel
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Wang R, Kaynak M, Sun Y, et al. 122 GHz Patch Antenna Designs by Using BCB
Above SiGe BiCMOS wafer process for system-on-chip applications. In: 24th Annual
IEEE International Symposium on Personal, Indoor and Mobile Radio Communications.
; 2013. doi:10.1109/PIMRC.2013.6666358'
apa: Wang, R., Kaynak, M., Sun, Y., Borngräber, J., Beer, S., Goettel, B., &
Scheytt, C. (2013). 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS
wafer process for system-on-chip applications. 24th Annual IEEE International
Symposium on Personal, Indoor and Mobile Radio Communications. https://doi.org/10.1109/PIMRC.2013.6666358
bibtex: '@inproceedings{Wang_Kaynak_Sun_Borngräber_Beer_Goettel_Scheytt_2013, place={Hilton,
London Metropole}, title={122 GHz Patch Antenna Designs by Using BCB Above SiGe
BiCMOS wafer process for system-on-chip applications}, DOI={10.1109/PIMRC.2013.6666358},
booktitle={24th Annual IEEE International Symposium on Personal, Indoor and Mobile
Radio Communications}, author={Wang, Ruoyu and Kaynak, Mehmet and Sun, Yaoming
and Borngräber, Johannes and Beer, Stefan and Goettel, B. and Scheytt, Christoph},
year={2013} }'
chicago: Wang, Ruoyu, Mehmet Kaynak, Yaoming Sun, Johannes Borngräber, Stefan Beer,
B. Goettel, and Christoph Scheytt. “122 GHz Patch Antenna Designs by Using BCB
Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” In 24th Annual
IEEE International Symposium on Personal, Indoor and Mobile Radio Communications.
Hilton, London Metropole, 2013. https://doi.org/10.1109/PIMRC.2013.6666358.
ieee: 'R. Wang et al., “122 GHz Patch Antenna Designs by Using BCB Above
SiGe BiCMOS wafer process for system-on-chip applications,” 2013, doi: 10.1109/PIMRC.2013.6666358.'
mla: Wang, Ruoyu, et al. “122 GHz Patch Antenna Designs by Using BCB Above SiGe
BiCMOS Wafer Process for System-on-Chip Applications.” 24th Annual IEEE International
Symposium on Personal, Indoor and Mobile Radio Communications, 2013, doi:10.1109/PIMRC.2013.6666358.
short: 'R. Wang, M. Kaynak, Y. Sun, J. Borngräber, S. Beer, B. Goettel, C. Scheytt,
in: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio
Communications, Hilton, London Metropole, 2013.'
conference:
end_date: 11.09.2013
start_date: 08.09.2013
date_created: 2021-09-14T09:22:17Z
date_updated: 2022-01-11T10:29:40Z
department:
- _id: '58'
doi: 10.1109/PIMRC.2013.6666358
language:
- iso: eng
place: Hilton, London Metropole
publication: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile
Radio Communications
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6666358
status: public
title: 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process
for system-on-chip applications
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24347'
abstract:
- lang: eng
text: In this paper, an integrated dielectric sensor with a read-out circuit in
an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists
of a 500-μm shorted half-wave coplanar-waveguide transmission line in the uppermost
metal layer of the silicon process, while the read-out is obtained by reflection
coefficient measurement with an integrated reflectometer and a signal source.
The reflectometer is verified with a circuit breakout including an integrated
dummy sensor. The reflectometer is able to measure the phase of the reflection
coefficient from 117 to 134 GHz with a resolution of 0.1° and a standard deviation
of 0.082°. The integrated sensor with the reflectometer circuit have been fabricated
in a 190-GHz fT SiGe:C BiCMOS technology. It spans an area of 1.4 mm 2 and consumes
75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit
board for characterization by immersion into test liquids. The sensor is controlled
by a controller board and a personal computer enabling a measurement time of up
to 1 ms per frequency point. Functionality of the sensor is demonstrated from
118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol
mixtures, showing good correlation between theory and measurement. The sensor
shows a standard deviation of the measured phase of 0.220° and is able to detect
a difference in ε' r of 0.0125
author:
- first_name: Benjamin
full_name: Laemmle, Benjamin
last_name: Laemmle
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Robert
full_name: Weigel, Robert
last_name: Weigel
- first_name: Dietmar
full_name: Kissinger, Dietmar
last_name: Kissinger
citation:
ama: Laemmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D. A 125-GHz Permittivity
Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. Microwave
Theory and Techniques, IEEE Transactions on. 2013;61(5):2185-2194. doi:10.1109/TMTT.2013.2253792
apa: Laemmle, B., Schmalz, K., Scheytt, C., Weigel, R., & Kissinger, D. (2013).
A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology.
Microwave Theory and Techniques, IEEE Transactions On, 61(5), 2185–2194.
https://doi.org/10.1109/TMTT.2013.2253792
bibtex: '@article{Laemmle_Schmalz_Scheytt_Weigel_Kissinger_2013, title={A 125-GHz
Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology},
volume={61}, DOI={10.1109/TMTT.2013.2253792},
number={5}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Laemmle,
Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger,
Dietmar}, year={2013}, pages={2185–2194} }'
chicago: 'Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Robert Weigel, and
Dietmar Kissinger. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm
SiGe BiCMOS Technology.” Microwave Theory and Techniques, IEEE Transactions
On 61, no. 5 (2013): 2185–94. https://doi.org/10.1109/TMTT.2013.2253792.'
ieee: 'B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, and D. Kissinger, “A 125-GHz
Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology,”
Microwave Theory and Techniques, IEEE Transactions on, vol. 61, no. 5,
pp. 2185–2194, 2013, doi: 10.1109/TMTT.2013.2253792.'
mla: Laemmle, Benjamin, et al. “A 125-GHz Permittivity Sensor With Read-Out Circuit
in a 250-Nm SiGe BiCMOS Technology.” Microwave Theory and Techniques, IEEE
Transactions On, vol. 61, no. 5, 2013, pp. 2185–94, doi:10.1109/TMTT.2013.2253792.
short: B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, D. Kissinger, Microwave Theory
and Techniques, IEEE Transactions On 61 (2013) 2185–2194.
date_created: 2021-09-14T09:22:23Z
date_updated: 2022-01-18T10:15:31Z
department:
- _id: '58'
doi: 10.1109/TMTT.2013.2253792
intvolume: ' 61'
issue: '5'
language:
- iso: eng
page: 2185-2194
publication: Microwave Theory and Techniques, IEEE Transactions on
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6492143
status: public
title: A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS
Technology
type: journal_article
user_id: '15931'
volume: 61
year: '2013'
...
---
_id: '24348'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Günter
full_name: Grau, Günter
last_name: Grau
citation:
ama: 'Scheytt C, Grau G. Neue Ansätze für miniaturisierte, hochintegrierte Abstands-,
Geschwindigkeits- und Drehwinkelsensoren. In: Wissenschaftsforum 2013, Intelligente
Technische Systeme, Heinz Nixdorf Institut. ; 2013.'
apa: Scheytt, C., & Grau, G. (2013). Neue Ansätze für miniaturisierte, hochintegrierte
Abstands-, Geschwindigkeits- und Drehwinkelsensoren. Wissenschaftsforum 2013,
Intelligente Technische Systeme, Heinz Nixdorf Institut.
bibtex: '@inproceedings{Scheytt_Grau_2013, place={Heinz Nixdorf MuseumsForum Paderborn,
Germany}, title={Neue Ansätze für miniaturisierte, hochintegrierte Abstands-,
Geschwindigkeits- und Drehwinkelsensoren}, booktitle={Wissenschaftsforum 2013,
Intelligente Technische Systeme, Heinz Nixdorf Institut}, author={Scheytt, Christoph
and Grau, Günter}, year={2013} }'
chicago: Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte,
Hochintegrierte Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” In Wissenschaftsforum
2013, Intelligente Technische Systeme, Heinz Nixdorf Institut. Heinz Nixdorf
MuseumsForum Paderborn, Germany, 2013.
ieee: C. Scheytt and G. Grau, “Neue Ansätze für miniaturisierte, hochintegrierte
Abstands-, Geschwindigkeits- und Drehwinkelsensoren,” 2013.
mla: Scheytt, Christoph, and Günter Grau. “Neue Ansätze Für Miniaturisierte, Hochintegrierte
Abstands-, Geschwindigkeits- Und Drehwinkelsensoren.” Wissenschaftsforum 2013,
Intelligente Technische Systeme, Heinz Nixdorf Institut, 2013.
short: 'C. Scheytt, G. Grau, in: Wissenschaftsforum 2013, Intelligente Technische
Systeme, Heinz Nixdorf Institut, Heinz Nixdorf MuseumsForum Paderborn, Germany,
2013.'
date_created: 2021-09-14T09:22:24Z
date_updated: 2022-01-18T10:17:43Z
department:
- _id: '58'
language:
- iso: eng
place: Heinz Nixdorf MuseumsForum Paderborn, Germany
publication: Wissenschaftsforum 2013, Intelligente Technische Systeme, Heinz Nixdorf
Institut
related_material:
link:
- relation: confirmation
url: https://docplayer.org/42941783-Wissenschaftsforum-programm-und-einladung-wissenschaftsforum-intelligente-technische-systeme.htm
status: public
title: Neue Ansätze für miniaturisierte, hochintegrierte Abstands-, Geschwindigkeits-
und Drehwinkelsensoren
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24346'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Scheytt C. Introduction to Integrated mm‐Wave Sensors. In: System, IC and
Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors.
; 2013.'
apa: Scheytt, C. (2013). Introduction to Integrated mm‐Wave Sensors. System,
IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors.
bibtex: '@inproceedings{Scheytt_2013, place={Karlsruhe, Germany}, title={Introduction
to Integrated mm‐Wave Sensors}, booktitle={System, IC and Integrated Antenna Design
for Miniaturized, Millimeter-wave Radar Sensors}, author={Scheytt, Christoph},
year={2013} }'
chicago: Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” In System,
IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors.
Karlsruhe, Germany, 2013.
ieee: C. Scheytt, “Introduction to Integrated mm‐Wave Sensors,” 2013.
mla: Scheytt, Christoph. “Introduction to Integrated Mm‐Wave Sensors.” System,
IC and Integrated Antenna Design for Miniaturized, Millimeter-Wave Radar Sensors,
2013.
short: 'C. Scheytt, in: System, IC and Integrated Antenna Design for Miniaturized,
Millimeter-Wave Radar Sensors, Karlsruhe, Germany, 2013.'
date_created: 2021-09-14T09:22:22Z
date_updated: 2022-01-18T10:14:15Z
department:
- _id: '58'
language:
- iso: eng
place: Karlsruhe, Germany
publication: System, IC and Integrated Antenna Design for Miniaturized, Millimeter-wave
Radar Sensors
status: public
title: Introduction to Integrated mm‐Wave Sensors
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24350'
abstract:
- lang: eng
text: This paper describes the design of D-band phased-array circuits in 0.25 μm
technology. The first part describes the design of the passive components which
are used in the phased-array systems such as balun, Wilkinson divider and branch-line
coupler. A millimeter-wave vector-modulator is designed to support both amplitude
and phase control for beam-forming applications. In the second part the designed
circuits are integrated together to form a two channel 110-130 GHz phased-array
chip. Each channel exhibits 360° phase control with 15 dB of amplitude control
range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave
phase shifting and the low-power consumption makes it ideal for highly integrated
scalable beam-forming systems for both imaging and communication.
author:
- first_name: Mohamed
full_name: Elkhouly, Mohamed
last_name: Elkhouly
- first_name: Srdjan
full_name: Glisic, Srdjan
last_name: Glisic
- first_name: Chafik
full_name: Meliani, Chafik
last_name: Meliani
- first_name: Frank
full_name: Ellinger, Frank
last_name: Ellinger
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Elkhouly M, Glisic S, Meliani C, Ellinger F, Scheytt C. 220–250-GHz Phased-Array
Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology. Microwave Theory and Techniques,
IEEE Transactions on. 2013;PP(99):1-13. doi:10.1109/TMTT.2013.2258032
apa: Elkhouly, M., Glisic, S., Meliani, C., Ellinger, F., & Scheytt, C. (2013).
220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology.
Microwave Theory and Techniques, IEEE Transactions On, PP(99), 1–13.
https://doi.org/10.1109/TMTT.2013.2258032
bibtex: '@article{Elkhouly_Glisic_Meliani_Ellinger_Scheytt_2013, title={220–250-GHz
Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology}, volume={PP},
DOI={10.1109/TMTT.2013.2258032},
number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on},
author={Elkhouly, Mohamed and Glisic, Srdjan and Meliani, Chafik and Ellinger,
Frank and Scheytt, Christoph}, year={2013}, pages={1–13} }'
chicago: 'Elkhouly, Mohamed, Srdjan Glisic, Chafik Meliani, Frank Ellinger, and
Christoph Scheytt. “220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe
BiCMOS Technology.” Microwave Theory and Techniques, IEEE Transactions On
PP, no. 99 (2013): 1–13. https://doi.org/10.1109/TMTT.2013.2258032.'
ieee: 'M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, and C. Scheytt, “220–250-GHz
Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology,” Microwave
Theory and Techniques, IEEE Transactions on, vol. PP, no. 99, pp. 1–13, 2013,
doi: 10.1109/TMTT.2013.2258032.'
mla: Elkhouly, Mohamed, et al. “220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox
m SiGe BiCMOS Technology.” Microwave Theory and Techniques, IEEE Transactions
On, vol. PP, no. 99, 2013, pp. 1–13, doi:10.1109/TMTT.2013.2258032.
short: M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, C. Scheytt, Microwave Theory
and Techniques, IEEE Transactions On PP (2013) 1–13.
date_created: 2021-09-14T09:22:27Z
date_updated: 2022-01-18T10:25:50Z
department:
- _id: '58'
doi: 10.1109/TMTT.2013.2258032
issue: '99'
language:
- iso: eng
page: 1-13
publication: Microwave Theory and Techniques, IEEE Transactions on
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6507360
status: public
title: 220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology
type: journal_article
user_id: '15931'
volume: PP
year: '2013'
...
---
_id: '24352'
abstract:
- lang: eng
text: "This paper analyses substrate-related spurious tones in fractional-N phase-\r\nlocked
loops with integrated VCOs. Spur positions are calculated and experimentally\r\nverified
as a function of the divider ratios of prescaler and programmable divider.\r\nFor
an integrated wideband PLL in SiGe BiCMOS technology the spur power levels\r\nare
measured and compared with theoretical expectations. The power in these spurs
is\r\nminimized by layout techniques shielding the reference input buffer. Spur
minimization\r\nby using a variable reference frequency is experimentally demonstrated.
Based on this\r\nobservation, a programmable integer-N PLL for driving the fractional-N
synthesizer is\r\nsuggested to reduce the worst-case spur level significantly.\r\nIndex
Terms — Fractional-N, frequency synthesizers, fractional spurs, substrate\r\nspurs,
phase-locked loops (PLLs), phase noise.\r\n"
author:
- first_name: Sabbir Ahmed
full_name: Osmany, Sabbir Ahmed
last_name: Osmany
- first_name: Frank
full_name: Herzel, Frank
last_name: Herzel
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Osmany SA, Herzel F, Scheytt C. Analysis and minimization of substrate spurs
in fractional-N frequency synthesizers. Analog Integrated Circuits and Signal
Processing. 2013;74(3):545-556. doi:10.1007/s10470-012-0002-x
apa: Osmany, S. A., Herzel, F., & Scheytt, C. (2013). Analysis and minimization
of substrate spurs in fractional-N frequency synthesizers. Analog Integrated
Circuits and Signal Processing, 74(3), 545–556. https://doi.org/10.1007/s10470-012-0002-x
bibtex: '@article{Osmany_Herzel_Scheytt_2013, title={Analysis and minimization of
substrate spurs in fractional-N frequency synthesizers}, volume={74}, DOI={10.1007/s10470-012-0002-x},
number={3}, journal={Analog Integrated Circuits and Signal Processing}, author={Osmany,
Sabbir Ahmed and Herzel, Frank and Scheytt, Christoph}, year={2013}, pages={545–556}
}'
chicago: 'Osmany, Sabbir Ahmed, Frank Herzel, and Christoph Scheytt. “Analysis and
Minimization of Substrate Spurs in Fractional-N Frequency Synthesizers.” Analog
Integrated Circuits and Signal Processing 74, no. 3 (2013): 545–56. https://doi.org/10.1007/s10470-012-0002-x.'
ieee: 'S. A. Osmany, F. Herzel, and C. Scheytt, “Analysis and minimization of substrate
spurs in fractional-N frequency synthesizers,” Analog Integrated Circuits and
Signal Processing, vol. 74, no. 3, pp. 545–556, 2013, doi: 10.1007/s10470-012-0002-x.'
mla: Osmany, Sabbir Ahmed, et al. “Analysis and Minimization of Substrate Spurs
in Fractional-N Frequency Synthesizers.” Analog Integrated Circuits and Signal
Processing, vol. 74, no. 3, 2013, pp. 545–56, doi:10.1007/s10470-012-0002-x.
short: S.A. Osmany, F. Herzel, C. Scheytt, Analog Integrated Circuits and Signal
Processing 74 (2013) 545–556.
date_created: 2021-09-14T09:22:30Z
date_updated: 2022-01-18T10:29:31Z
department:
- _id: '58'
doi: 10.1007/s10470-012-0002-x
intvolume: ' 74'
issue: '3'
language:
- iso: eng
page: 545-556
publication: Analog Integrated Circuits and Signal Processing
related_material:
link:
- relation: confirmation
url: https://www.researchgate.net/publication/233895658_Analysis_and_minimization_of_substrate_spurs_in_fractional-N_frequency_synthesizers
status: public
title: Analysis and minimization of substrate spurs in fractional-N frequency synthesizers
type: journal_article
user_id: '15931'
volume: 74
year: '2013'
...
---
_id: '24349'
abstract:
- lang: eng
text: This paper presents the packaging technology and the integrated antenna design
for a miniaturized 122-GHz radar sensor. The package layout and the assembly process
are shortly explained. Measurements of the antenna including the flip chip interconnect
are presented that have been achieved by replacing the IC with a dummy chip that
only contains a through-line. Afterwards, radiation pattern measurements are shown
that were recorded using the radar sensor as transmitter. Finally, details of
the fully integrated radar sensor are given, together with results of the first
Doppler measurements.
author:
- first_name: Stefan
full_name: Beer, Stefan
last_name: Beer
- first_name: Mekdes Gebresilassie
full_name: Girma, Mekdes Gebresilassie
last_name: Girma
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Wolfgang
full_name: Winkler, Wolfgang
last_name: Winkler
- first_name: Wojciech
full_name: Debski, Wojciech
last_name: Debski
- first_name: Jaska
full_name: Paaso, Jaska
last_name: Paaso
- first_name: Gerhard
full_name: Kunkel, Gerhard
last_name: Kunkel
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Jürgen
full_name: Hasch, Jürgen
last_name: Hasch
- first_name: Thomas
full_name: Zwick, Thomas
last_name: Zwick
citation:
ama: 'Beer S, Girma MG, Sun Y, et al. Flip-Chip Package with Integrated Antenna
on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. In: 7th EUROPEAN
CONFERENCE ON ANTENNAS AND PROPAGATION. ; 2013.'
apa: Beer, S., Girma, M. G., Sun, Y., Winkler, W., Debski, W., Paaso, J., Kunkel,
G., Scheytt, C., Hasch, J., & Zwick, T. (2013). Flip-Chip Package with Integrated
Antenna on a Polyimide Substrate for a 122-GHz Bistatic Radar IC. 7th EUROPEAN
CONFERENCE ON ANTENNAS AND PROPAGATION.
bibtex: '@inproceedings{Beer_Girma_Sun_Winkler_Debski_Paaso_Kunkel_Scheytt_Hasch_Zwick_2013,
place={Gothenburg, Sweden}, title={Flip-Chip Package with Integrated Antenna on
a Polyimide Substrate for a 122-GHz Bistatic Radar IC}, booktitle={7th EUROPEAN
CONFERENCE ON ANTENNAS AND PROPAGATION}, author={Beer, Stefan and Girma, Mekdes
Gebresilassie and Sun, Yaoming and Winkler, Wolfgang and Debski, Wojciech and
Paaso, Jaska and Kunkel, Gerhard and Scheytt, Christoph and Hasch, Jürgen and
Zwick, Thomas}, year={2013} }'
chicago: Beer, Stefan, Mekdes Gebresilassie Girma, Yaoming Sun, Wolfgang Winkler,
Wojciech Debski, Jaska Paaso, Gerhard Kunkel, Christoph Scheytt, Jürgen Hasch,
and Thomas Zwick. “Flip-Chip Package with Integrated Antenna on a Polyimide Substrate
for a 122-GHz Bistatic Radar IC.” In 7th EUROPEAN CONFERENCE ON ANTENNAS AND
PROPAGATION. Gothenburg, Sweden, 2013.
ieee: S. Beer et al., “Flip-Chip Package with Integrated Antenna on a Polyimide
Substrate for a 122-GHz Bistatic Radar IC,” 2013.
mla: Beer, Stefan, et al. “Flip-Chip Package with Integrated Antenna on a Polyimide
Substrate for a 122-GHz Bistatic Radar IC.” 7th EUROPEAN CONFERENCE ON ANTENNAS
AND PROPAGATION, 2013.
short: 'S. Beer, M.G. Girma, Y. Sun, W. Winkler, W. Debski, J. Paaso, G. Kunkel,
C. Scheytt, J. Hasch, T. Zwick, in: 7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION,
Gothenburg, Sweden, 2013.'
date_created: 2021-09-14T09:22:26Z
date_updated: 2022-01-18T10:23:24Z
department:
- _id: '58'
language:
- iso: eng
place: Gothenburg, Sweden
publication: 7th EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION
publication_identifier:
eisbn:
- 978-88-907018-3-2
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6546229
status: public
title: Flip-Chip Package with Integrated Antenna on a Polyimide Substrate for a 122-GHz
Bistatic Radar IC
type: conference
user_id: '15931'
year: '2013'
...
---
_id: '24351'
abstract:
- lang: eng
text: We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical
and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology,
enables error-free data recovery of heavily distorted signals transmitted at a
bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer
reported yet utilizes a novel 1-tap look-ahead architecture.
author:
- first_name: Lothar
full_name: Möller, Lothar
last_name: Möller
- first_name: Ahmed
full_name: Awny, Ahmed
last_name: Awny
- first_name: Josef
full_name: Junio, Josef
last_name: Junio
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
orcid: https://orcid.org/0000-0002-5950-6618
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
citation:
ama: 'Möller L, Awny A, Junio J, Scheytt C, Thiede A. 80 Gb/s Decision Feedback
Equalizer for Intersymbol Interference. In: Optical Fiber Communication Conference.
; 2013. doi:10.1364/OFC.2013.OW4B.2
'
apa: Möller, L., Awny, A., Junio, J., Scheytt, C., & Thiede, A. (2013). 80 Gb/s
Decision Feedback Equalizer for Intersymbol Interference. Optical Fiber Communication
Conference. https://doi.org/10.1364/OFC.2013.OW4B.2
bibtex: '@inproceedings{Möller_Awny_Junio_Scheytt_Thiede_2013, place={Anaheim, California
United States}, title={80 Gb/s Decision Feedback Equalizer for Intersymbol Interference},
DOI={10.1364/OFC.2013.OW4B.2
}, booktitle={Optical Fiber Communication Conference}, author={Möller, Lothar
and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas},
year={2013} }'
chicago: Möller, Lothar, Ahmed Awny, Josef Junio, Christoph Scheytt, and Andreas
Thiede. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” In
Optical Fiber Communication Conference. Anaheim, California United States,
2013. https://doi.org/10.1364/OFC.2013.OW4B.2
.
ieee: 'L. Möller, A. Awny, J. Junio, C. Scheytt, and A. Thiede, “80 Gb/s Decision
Feedback Equalizer for Intersymbol Interference,” 2013, doi: 10.1364/OFC.2013.OW4B.2 .'
mla: Möller, Lothar, et al. “80 Gb/s Decision Feedback Equalizer for Intersymbol
Interference.” Optical Fiber Communication Conference, 2013, doi:10.1364/OFC.2013.OW4B.2 .
short: 'L. Möller, A. Awny, J. Junio, C. Scheytt, A. Thiede, in: Optical Fiber Communication
Conference, Anaheim, California United States, 2013.'
date_created: 2021-09-14T09:22:28Z
date_updated: 2023-01-25T11:03:26Z
department:
- _id: '58'
- _id: '51'
doi: '10.1364/OFC.2013.OW4B.2 '
language:
- iso: eng
place: Anaheim, California United States
publication: Optical Fiber Communication Conference
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6533180
status: public
title: 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference
type: conference
user_id: '158'
year: '2013'
...
---
_id: '24401'
abstract:
- lang: eng
text: "A subharmonic receiver for sensing applications in \r\nthe 245 GHz
ISM band has been proposed. The receiver consists \r\nof a single-ended common
base LNA, a 60 GHz push-push VCO \r\nwith 1/32 divider, a transconductance
4th subharmonic mixer and \r\nIF amplifier. The receiver is fabricated in
\ fT/fmax=300/500 GHz \r\nSiGe: C BiCMOS technology. Its measured single-ended
\ gain is \r\n21 dB at 243 GHz with tuning range of 12 GHz, and the
\ single-\r\nside band noise figure is 32 dB. The input 1-dB compression
\ \r\npoint is at -37 dBm. The receiver dissipates a power of 358 mW."
author:
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
citation:
ama: 'Mao Y, Scheytt C, Schmalz K, Borngräber J. 245 GHz subharmonic receiver in
SiGe. In: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European.
; 2012:183-186.'
apa: Mao, Y., Scheytt, C., Schmalz, K., & Borngräber, J. (2012). 245 GHz subharmonic
receiver in SiGe. Microwave Integrated Circuits Conference (EuMIC), 2012 7th
European, 183–186.
bibtex: '@inproceedings{Mao_Scheytt_Schmalz_Borngräber_2012, place={Amsterdam, Netherland},
title={245 GHz subharmonic receiver in SiGe}, booktitle={Microwave Integrated
Circuits Conference (EuMIC), 2012 7th European}, author={Mao, Yanfei and Scheytt,
Christoph and Schmalz, Klaus and Borngräber, Johannes}, year={2012}, pages={183–186}
}'
chicago: Mao, Yanfei, Christoph Scheytt, Klaus Schmalz, and Johannes Borngräber.
“245 GHz Subharmonic Receiver in SiGe.” In Microwave Integrated Circuits Conference
(EuMIC), 2012 7th European, 183–86. Amsterdam, Netherland, 2012.
ieee: Y. Mao, C. Scheytt, K. Schmalz, and J. Borngräber, “245 GHz subharmonic receiver
in SiGe,” in Microwave Integrated Circuits Conference (EuMIC), 2012 7th European,
2012, pp. 183–186.
mla: Mao, Yanfei, et al. “245 GHz Subharmonic Receiver in SiGe.” Microwave Integrated
Circuits Conference (EuMIC), 2012 7th European, 2012, pp. 183–86.
short: 'Y. Mao, C. Scheytt, K. Schmalz, J. Borngräber, in: Microwave Integrated
Circuits Conference (EuMIC), 2012 7th European, Amsterdam, Netherland, 2012, pp.
183–186.'
conference:
end_date: 30.10.2012
start_date: 29.10.2012
date_created: 2021-09-14T12:54:38Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
language:
- iso: eng
page: 183-186
place: Amsterdam, Netherland
publication: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
publication_identifier:
eisbn:
- 978-2-87487-028-6
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6483766
status: public
title: 245 GHz subharmonic receiver in SiGe
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24402'
abstract:
- lang: eng
text: "The design of a complex integrated transceiver for \r\n121–124 GHz
is presented. The transceiver consists of the \r\ntransmitter with VCO, power
amplifier and power detectors, the \r\nreceiver with LNA, two mixers for
\ quadrature receive path and \r\nvariable gain amplifiers for IF-output
\ and the digital control \r\ncircuits with SPI-interface. A central part
is the VCO with DAC \r\nand memory for on-chip storage of programmable
\ frequency \r\nramps for FMCW radar applications. The oscillator phase
\ noise \r\nis -92 dBc/Hz at 1MHz offset. For calibration of the radar-system
\r\non chip, a frequency measurement unit is integrated. The radar \r\nchip
has power consumption of 380 mW and occupies an area of \r\n1.8 mm x 1.5 mm.
Several examples of frequency ramp \r\ngeneration are presented. The chip
\ is intended for integration \r\ntogether with antenna in a single package."
author:
- first_name: Wojciech
full_name: Debski, Wojciech
last_name: Debski
- first_name: Wolfgang
full_name: Winkler, Wolfgang
last_name: Winkler
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Miroslav
full_name: Marinkovic, Miroslav
last_name: Marinkovic
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Debski W, Winkler W, Sun Y, Marinkovic M, Borngräber J, Scheytt C. 120 GHz
Radar Mixed-Signal Transceiver. In: Microwave Integrated Circuits Conference
(EuMIC), 2012 7th European. ; 2012:191-194.'
apa: Debski, W., Winkler, W., Sun, Y., Marinkovic, M., Borngräber, J., & Scheytt,
C. (2012). 120 GHz Radar Mixed-Signal Transceiver. Microwave Integrated Circuits
Conference (EuMIC), 2012 7th European, 191–194.
bibtex: '@inproceedings{Debski_Winkler_Sun_Marinkovic_Borngräber_Scheytt_2012, title={120
GHz Radar Mixed-Signal Transceiver}, booktitle={Microwave Integrated Circuits
Conference (EuMIC), 2012 7th European}, author={Debski, Wojciech and Winkler,
Wolfgang and Sun, Yaoming and Marinkovic, Miroslav and Borngräber, Johannes and
Scheytt, Christoph}, year={2012}, pages={191–194} }'
chicago: Debski, Wojciech, Wolfgang Winkler, Yaoming Sun, Miroslav Marinkovic, Johannes
Borngräber, and Christoph Scheytt. “120 GHz Radar Mixed-Signal Transceiver.” In
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, 191–94,
2012.
ieee: W. Debski, W. Winkler, Y. Sun, M. Marinkovic, J. Borngräber, and C. Scheytt,
“120 GHz Radar Mixed-Signal Transceiver,” in Microwave Integrated Circuits
Conference (EuMIC), 2012 7th European, 2012, pp. 191–194.
mla: Debski, Wojciech, et al. “120 GHz Radar Mixed-Signal Transceiver.” Microwave
Integrated Circuits Conference (EuMIC), 2012 7th European, 2012, pp. 191–94.
short: 'W. Debski, W. Winkler, Y. Sun, M. Marinkovic, J. Borngräber, C. Scheytt,
in: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, 2012,
pp. 191–194.'
conference:
end_date: 30.10.2012
start_date: 29.10.2012
date_created: 2021-09-14T12:54:39Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
language:
- iso: eng
page: 191-194
publication: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
publication_identifier:
eisbn:
- 978-2-87487-028-6
related_material:
link:
- relation: confirmation
url: 978-2-87487-028-6
status: public
title: 120 GHz Radar Mixed-Signal Transceiver
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24403'
abstract:
- lang: eng
text: "A passive microwave sensor based on microstrip lines \r\nfor characterizing
\ cell cultivation in aqueous compartments is \r\npresented. The proposed
\ design methodology leads to a highly \r\nsensitive biosensor structure,
which is fabricated on Rogers 3003 \r\nmaterial. It is shown that a sufficiently
high sensitivity is achieved \r\nto monitor the cultivation stadium of a
\ yeast culture based on \r\ndetection of permittivity changes. The obtained
\ measurement \r\nresults show good agreement with the performed full 3D
\ EM \r\nsimulations. According to these results the presented biosensor is \r\ncapable
\ of characterizing the stage of yeast cultivation label-free \r\nand contactless."
author:
- first_name: Jan
full_name: Wessel, Jan
last_name: Wessel
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Brian
full_name: Cahill, Brian
last_name: Cahill
- first_name: Gunter
full_name: Gastrock, Gunter
last_name: Gastrock
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Wessel J, Schmalz K, Cahill B, Gastrock G, Scheytt C. Microwave Biosensor
for Characterization of Compartments in Teflon Cappilaries. In: Microwave Conference
(EuMC), 2012 42nd European. ; 2012. doi:10.23919/EuMC.2012.6459231 '
apa: Wessel, J., Schmalz, K., Cahill, B., Gastrock, G., & Scheytt, C. (2012).
Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries.
Microwave Conference (EuMC), 2012 42nd European. https://doi.org/10.23919/EuMC.2012.6459231
bibtex: '@inproceedings{Wessel_Schmalz_Cahill_Gastrock_Scheytt_2012, title={Microwave
Biosensor for Characterization of Compartments in Teflon Cappilaries}, DOI={10.23919/EuMC.2012.6459231
}, booktitle={Microwave Conference (EuMC), 2012 42nd European}, author={Wessel,
Jan and Schmalz, Klaus and Cahill, Brian and Gastrock, Gunter and Scheytt, Christoph},
year={2012} }'
chicago: Wessel, Jan, Klaus Schmalz, Brian Cahill, Gunter Gastrock, and Christoph
Scheytt. “Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries.”
In Microwave Conference (EuMC), 2012 42nd European, 2012. https://doi.org/10.23919/EuMC.2012.6459231 .
ieee: 'J. Wessel, K. Schmalz, B. Cahill, G. Gastrock, and C. Scheytt, “Microwave
Biosensor for Characterization of Compartments in Teflon Cappilaries,” 2012, doi:
10.23919/EuMC.2012.6459231
.'
mla: Wessel, Jan, et al. “Microwave Biosensor for Characterization of Compartments
in Teflon Cappilaries.” Microwave Conference (EuMC), 2012 42nd European,
2012, doi:10.23919/EuMC.2012.6459231
.
short: 'J. Wessel, K. Schmalz, B. Cahill, G. Gastrock, C. Scheytt, in: Microwave
Conference (EuMC), 2012 42nd European, 2012.'
conference:
end_date: 01.11.2012
start_date: 29.10.2012
date_created: 2021-09-14T12:54:40Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: '10.23919/EuMC.2012.6459231 '
language:
- iso: eng
publication: Microwave Conference (EuMC), 2012 42nd European
publication_identifier:
eisbn:
- 978-2-87487-027-9
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6459231
status: public
title: Microwave Biosensor for Characterization of Compartments in Teflon Cappilaries
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24405'
abstract:
- lang: eng
text: "Abstract— This paper presents a fully digital transmitter \r\narchitecture
based on a digital polar modulator (DPM) and \r\nswitch-mode power amplifier (SMPA).
A simple method for \r\ncomparison and estimation of different digital modulation
\r\ntechniques for SMPA is described. An estimation of the proposed \r\ndigital
polar modulator properties was done by means of a \r\n2.1..2.2 GHz class-F power
\ amplifier. For a CDMA signal with \r\n9.5 dB peak-to-average power ratio
\ (PAPR), the class-F based \r\namplifier module driven by DPM pulse train
\ shows more than \r\n1 W output power and more than 10 % of drain efficiency. "
author:
- first_name: Philip
full_name: Ostrovskyy, Philip
last_name: Ostrovskyy
- first_name: Holger
full_name: Heuermann, Holger
last_name: Heuermann
- first_name: Arash
full_name: Sadeghfam, Arash
last_name: Sadeghfam
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Ostrovskyy P, Heuermann H, Sadeghfam A, Scheytt C. Performance Estimation
of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier.
In: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European.
; 2012:659-662. doi:10.23919/EuMC.2012.6459419'
apa: Ostrovskyy, P., Heuermann, H., Sadeghfam, A., & Scheytt, C. (2012). Performance
Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power
Amplifier. Microwave Integrated Circuits Conference (EuMIC), 2012 7th European,
659–662. https://doi.org/10.23919/EuMC.2012.6459419
bibtex: '@inproceedings{Ostrovskyy_Heuermann_Sadeghfam_Scheytt_2012, place={European
Microwave Week 2012, Amsterdam}, title={Performance Estimation of Fully Digital
Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier}, DOI={10.23919/EuMC.2012.6459419},
booktitle={Microwave Integrated Circuits Conference (EuMIC), 2012 7th European},
author={Ostrovskyy, Philip and Heuermann, Holger and Sadeghfam, Arash and Scheytt,
Christoph}, year={2012}, pages={659–662} }'
chicago: Ostrovskyy, Philip, Holger Heuermann, Arash Sadeghfam, and Christoph Scheytt.
“Performance Estimation of Fully Digital Polar Modulation Driving a 2 GHz Switch-Mode
Power Amplifier.” In Microwave Integrated Circuits Conference (EuMIC), 2012
7th European, 659–62. European Microwave Week 2012, Amsterdam, 2012. https://doi.org/10.23919/EuMC.2012.6459419.
ieee: 'P. Ostrovskyy, H. Heuermann, A. Sadeghfam, and C. Scheytt, “Performance Estimation
of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode Power Amplifier,”
in Microwave Integrated Circuits Conference (EuMIC), 2012 7th European,
Amsterdam, 2012, pp. 659–662, doi: 10.23919/EuMC.2012.6459419.'
mla: Ostrovskyy, Philip, et al. “Performance Estimation of Fully Digital Polar Modulation
Driving a 2 GHz Switch-Mode Power Amplifier.” Microwave Integrated Circuits
Conference (EuMIC), 2012 7th European, 2012, pp. 659–62, doi:10.23919/EuMC.2012.6459419.
short: 'P. Ostrovskyy, H. Heuermann, A. Sadeghfam, C. Scheytt, in: Microwave Integrated
Circuits Conference (EuMIC), 2012 7th European, European Microwave Week 2012,
Amsterdam, 2012, pp. 659–662.'
conference:
end_date: 01.11.2012
location: Amsterdam
start_date: 29.10.2012
date_created: 2021-09-14T12:54:43Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.23919/EuMC.2012.6459419
language:
- iso: eng
page: 659-662
place: European Microwave Week 2012, Amsterdam
publication: Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
publication_identifier:
eisbn:
- 978-2-87487-028-6
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6483886
status: public
title: Performance Estimation of Fully Digital Polar Modulation driving a 2 GHz Switch-Mode
Power Amplifier
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24406'
abstract:
- lang: eng
text: "A subharmonic receiver for sensing applications in \r\nthe 245 GHz
ISM band has been proposed. The receiver consists \r\nof a single-ended common
base LNA, a 60 GHz push-push VCO \r\nwith 1/32 divider, a transconductance
4th subharmonic mixer and \r\nIF amplifier. The receiver is fabricated in
\ fT/fmax=300/500 GHz \r\nSiGe: C BiCMOS technology. Its measured single-ended
\ gain is \r\n21 dB at 243 GHz with tuning range of 12 GHz, and the
\ single-\r\nside band noise figure is 32 dB. The input 1-dB compression
\ \r\npoint is at -37 dBm. The receiver dissipates a power of 358 mW. \r\nIndex
\ Terms— SiGe technology, millimeter-wave circuits, 245 \r\nGHz, CB LNA,
SHM, VCO, sub-harmonic receiver."
author:
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Mao Y, Schmalz K, Borngräber J, Scheytt C. 245-GHz subharmonic receiver in
SiGe . Microwave Theory and Techniques, IEEE Transactions on. 2012;PP(99):183-186.
apa: Mao, Y., Schmalz, K., Borngräber, J., & Scheytt, C. (2012). 245-GHz subharmonic
receiver in SiGe . Microwave Theory and Techniques, IEEE Transactions On,
PP(99), 183–186.
bibtex: '@article{Mao_Schmalz_Borngräber_Scheytt_2012, title={245-GHz subharmonic
receiver in SiGe }, volume={PP}, number={99}, journal={Microwave Theory and Techniques,
IEEE Transactions on}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber,
Johannes and Scheytt, Christoph}, year={2012}, pages={183–186} }'
chicago: 'Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt.
“245-GHz Subharmonic Receiver in SiGe .” Microwave Theory and Techniques, IEEE
Transactions On PP, no. 99 (2012): 183–86.'
ieee: Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “245-GHz subharmonic receiver
in SiGe ,” Microwave Theory and Techniques, IEEE Transactions on, vol.
PP, no. 99, pp. 183–186, 2012.
mla: Mao, Yanfei, et al. “245-GHz Subharmonic Receiver in SiGe .” Microwave Theory
and Techniques, IEEE Transactions On, vol. PP, no. 99, 2012, pp. 183–86.
short: Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, Microwave Theory and Techniques,
IEEE Transactions On PP (2012) 183–186.
conference:
end_date: 30.10.2012
start_date: 29.10.2012
date_created: 2021-09-14T12:54:44Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
issue: '99'
language:
- iso: eng
page: 183-186
publication: Microwave Theory and Techniques, IEEE Transactions on
publication_identifier:
eisbn:
- 978-2-87487-028-6
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6483766
status: public
title: '245-GHz subharmonic receiver in SiGe '
type: journal_article
user_id: '15931'
volume: PP
year: '2012'
...
---
_id: '24407'
abstract:
- lang: eng
text: A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated
in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes
switching conditions for the amplification stage of the switch-mode power amplifier
in comparison to the BDSM architecture. The BDSM is clocked at 5 GHz, while the
notch frequency can be tuned in a range of 2.1-2.2 GHz. The modulator achieves
46.6-dB signal-to-noise and distortion ratio in 10-MHz bandwidth for a sine-wave
input at 2.2 GHz consuming 330 mW from a 3-V supply. The BDSM was also tested
with a single-channel WCDMA signal. It has demonstrated 42.2-dBc adjacent channel
leakage ratio at 5-MHz offset and less than 2.1% error vector magnitude over the
tuning range.
author:
- first_name: Philip
full_name: Ostrovskyy, Philip
last_name: Ostrovskyy
- first_name: Hans
full_name: Gustat, Hans
last_name: Gustat
- first_name: Maurits
full_name: Ortmanns, Maurits
last_name: Ortmanns
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Ostrovskyy P, Gustat H, Ortmanns M, Scheytt C. A 5-Gb/s 2.1–2.2-GHz Bandpass
\Delta \Sigma Modulator for Switch-Mode Power Amplifier. Microwave Theory and
Techniques, IEEE Transactions on. 2012;60(8):2524-2531. doi:10.1109/TMTT.2012.2203143
apa: Ostrovskyy, P., Gustat, H., Ortmanns, M., & Scheytt, C. (2012). A 5-Gb/s
2.1–2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier.
Microwave Theory and Techniques, IEEE Transactions On, 60(8), 2524–2531.
https://doi.org/10.1109/TMTT.2012.2203143
bibtex: '@article{Ostrovskyy_Gustat_Ortmanns_Scheytt_2012, title={A 5-Gb/s 2.1–2.2-GHz
Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier}, volume={60},
DOI={10.1109/TMTT.2012.2203143},
number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Ostrovskyy,
Philip and Gustat, Hans and Ortmanns, Maurits and Scheytt, Christoph}, year={2012},
pages={2524–2531} }'
chicago: 'Ostrovskyy, Philip, Hans Gustat, Maurits Ortmanns, and Christoph Scheytt.
“A 5-Gb/s 2.1–2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier.”
Microwave Theory and Techniques, IEEE Transactions On 60, no. 8 (2012):
2524–31. https://doi.org/10.1109/TMTT.2012.2203143.'
ieee: 'P. Ostrovskyy, H. Gustat, M. Ortmanns, and C. Scheytt, “A 5-Gb/s 2.1–2.2-GHz
Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier,” Microwave
Theory and Techniques, IEEE Transactions on, vol. 60, no. 8, pp. 2524–2531,
2012, doi: 10.1109/TMTT.2012.2203143.'
mla: Ostrovskyy, Philip, et al. “A 5-Gb/s 2.1–2.2-GHz Bandpass \Delta \Sigma Modulator
for Switch-Mode Power Amplifier.” Microwave Theory and Techniques, IEEE Transactions
On, vol. 60, no. 8, 2012, pp. 2524–31, doi:10.1109/TMTT.2012.2203143.
short: P. Ostrovskyy, H. Gustat, M. Ortmanns, C. Scheytt, Microwave Theory and Techniques,
IEEE Transactions On 60 (2012) 2524–2531.
date_created: 2021-09-14T12:54:46Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/TMTT.2012.2203143
intvolume: ' 60'
issue: '8'
language:
- iso: eng
page: 2524-2531
publication: Microwave Theory and Techniques, IEEE Transactions on
publication_identifier:
eissn:
- 1557-9670
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6227312
status: public
title: A 5-Gb/s 2.1–2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power
Amplifier
type: journal_article
user_id: '15931'
volume: 60
year: '2012'
...
---
_id: '24408'
abstract:
- lang: eng
text: This paper presents a 60-GHz SiGe PA with a 29.2% power-added efficiency (PAE),
a peak power of 16.8 dBm, and a peak output 1-dB compression (OP 1dB ) of 14 dBm.
Its measured gain is 13.5 dB at 60 GHz with a corresponding 3-dB bandwidth of
47-74 GHz. The PAE is above 25% with a supply voltage from 2.2 to 4 V. A cascode
stage has been analyzed and used as the amplifier core. The high PAE is achieved
by pushing the upper transistor of the cascode stage to weak avalanche area and
correct transistor sizing. The linearity is achieved by optimizing the input matching
and emitter degeneration. Safe operation conditions of heterojunction bipolar
transistors at dc and high frequencies have been investigated at weak avalanche
area. A safe operation boundary for high frequencies is given based on our experimental
results and analytical derivations. Large-signal stress tests have shown there
is no performance degradation and have proved the validity of this safe operation
boundary.
author:
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Gerhard G.
full_name: Fischer, Gerhard G.
last_name: Fischer
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Sun Y, Fischer GG, Scheytt C. A Compact Linear 60-GHz PA With 29.2% PAE Operating
at Weak Avalanche. Microwave Theory and Techniques, IEEE Transactions on.
2012;60(8):2581-2589. doi:10.1109/TMTT.2012.2202684
apa: Sun, Y., Fischer, G. G., & Scheytt, C. (2012). A Compact Linear 60-GHz
PA With 29.2% PAE Operating at Weak Avalanche. Microwave Theory and Techniques,
IEEE Transactions On, 60(8), 2581–2589. https://doi.org/10.1109/TMTT.2012.2202684
bibtex: '@article{Sun_Fischer_Scheytt_2012, title={A Compact Linear 60-GHz PA With
29.2% PAE Operating at Weak Avalanche}, volume={60}, DOI={10.1109/TMTT.2012.2202684},
number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Sun,
Yaoming and Fischer, Gerhard G. and Scheytt, Christoph}, year={2012}, pages={2581–2589}
}'
chicago: 'Sun, Yaoming, Gerhard G. Fischer, and Christoph Scheytt. “A Compact Linear
60-GHz PA With 29.2% PAE Operating at Weak Avalanche.” Microwave Theory and
Techniques, IEEE Transactions On 60, no. 8 (2012): 2581–89. https://doi.org/10.1109/TMTT.2012.2202684.'
ieee: 'Y. Sun, G. G. Fischer, and C. Scheytt, “A Compact Linear 60-GHz PA With 29.2%
PAE Operating at Weak Avalanche,” Microwave Theory and Techniques, IEEE Transactions
on, vol. 60, no. 8, pp. 2581–2589, 2012, doi: 10.1109/TMTT.2012.2202684.'
mla: Sun, Yaoming, et al. “A Compact Linear 60-GHz PA With 29.2% PAE Operating at
Weak Avalanche.” Microwave Theory and Techniques, IEEE Transactions On,
vol. 60, no. 8, 2012, pp. 2581–89, doi:10.1109/TMTT.2012.2202684.
short: Y. Sun, G.G. Fischer, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions
On 60 (2012) 2581–2589.
date_created: 2021-09-14T12:59:31Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/TMTT.2012.2202684
intvolume: ' 60'
issue: '8'
language:
- iso: eng
page: ' 2581 - 2589'
publication: Microwave Theory and Techniques, IEEE Transactions on
publication_identifier:
eissn:
- '1557-9670 '
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6236242
status: public
title: A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche
type: journal_article
user_id: '15931'
volume: 60
year: '2012'
...
---
_id: '24409'
abstract:
- lang: eng
text: We propose a new circuit for the realization of transimpedance amplifiers
(TIAs), targeted at reducing the input-referred noise of the TIA or alternatively
increasing the bandwidth, without increasing the power dissipation. An intensive
theoretical analysis of the method is given. A prototype chip is fabricated in
0.25- μm SiGe BiCMOS technology. The TIA has a gain of 71 dBΩ , a bandwidth of
20.5 GHz, and an average input-referred current noise density of 18 pA/√Hz . The
circuit operates from a 2.5-V supply, and power dissipation is 57 mW.
author:
- first_name: Behnam
full_name: Sedighi, Behnam
last_name: Sedighi
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Sedighi B, Scheytt C. Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud
Optical Links. (Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial
Engineering. 2012;59(8):461-465. doi:10.1109/TCSII.2012.2204118
apa: Sedighi, B., & Scheytt, C. (2012). Low-Power SiGe BiCMOS Transimpedance
Amplifier for 25-GBaud Optical Links. (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung
Und Industrial Engineering, 59(8), 461–465. https://doi.org/10.1109/TCSII.2012.2204118
bibtex: '@article{Sedighi_Scheytt_2012, title={Low-Power SiGe BiCMOS Transimpedance
Amplifier for 25-GBaud Optical Links}, volume={59}, DOI={10.1109/TCSII.2012.2204118},
number={8}, journal={(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und
Industrial Engineering}, author={Sedighi, Behnam and Scheytt, Christoph}, year={2012},
pages={461–465} }'
chicago: 'Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance
Amplifier for 25-GBaud Optical Links.” (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung
Und Industrial Engineering 59, no. 8 (2012): 461–65. https://doi.org/10.1109/TCSII.2012.2204118.'
ieee: 'B. Sedighi and C. Scheytt, “Low-Power SiGe BiCMOS Transimpedance Amplifier
for 25-GBaud Optical Links,” (Refa) FB/IE Zeitschrift für Unternehmensentwicklung
und Industrial Engineering, vol. 59, no. 8, pp. 461–465, 2012, doi: 10.1109/TCSII.2012.2204118.'
mla: Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance
Amplifier for 25-GBaud Optical Links.” (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung
Und Industrial Engineering, vol. 59, no. 8, 2012, pp. 461–65, doi:10.1109/TCSII.2012.2204118.
short: B. Sedighi, C. Scheytt, (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung
Und Industrial Engineering 59 (2012) 461–465.
date_created: 2021-09-14T12:59:32Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/TCSII.2012.2204118
intvolume: ' 59'
issue: '8'
language:
- iso: eng
page: 461-465
publication: (Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6241407
status: public
title: Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links
type: journal_article
user_id: '15931'
volume: 59
year: '2012'
...