---
_id: '24418'
abstract:
- lang: eng
text: The paper presents a four stage 245 GHz LNA in an f t /f max =280/425 GHz
SiGe technology and a 4 th sub harmonic 245 GHz transconductance mixer in an f
t /f max =250/300 GHz SiGe technology. The LNA takes advantage of common base
(CB) topology for each stage and has 12 dB gain at 245 GHz, while exhibiting a
3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation
of 28 mW. The transconductance mixer has -7 dB conversion gain at 245 GHz with
an LO power of 8 dBm at 61 GHz. The mixer draws 9.8 mA at 3V. Simulation results
of the receiver comprising the CB LNA and SHM mixer are given.
author:
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Mao Y, Schmalz K, Borngräber J, Scheytt C. A 245 GHz CB LNA and SHM mixer
in SiGe technology. In: SiRF 2012 (Silicon Monolithic Integrated Circuits in
RF Systems). ; 2012:5-8. doi:10.1109/SiRF.2012.6160120'
apa: Mao, Y., Schmalz, K., Borngräber, J., & Scheytt, C. (2012). A 245 GHz CB
LNA and SHM mixer in SiGe technology. SiRF 2012 (Silicon Monolithic Integrated
Circuits in RF Systems), 5–8. https://doi.org/10.1109/SiRF.2012.6160120
bibtex: '@inproceedings{Mao_Schmalz_Borngräber_Scheytt_2012, title={A 245 GHz CB
LNA and SHM mixer in SiGe technology}, DOI={10.1109/SiRF.2012.6160120},
booktitle={SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)},
author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph},
year={2012}, pages={5–8} }'
chicago: Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt.
“A 245 GHz CB LNA and SHM Mixer in SiGe Technology.” In SiRF 2012 (Silicon
Monolithic Integrated Circuits in RF Systems), 5–8, 2012. https://doi.org/10.1109/SiRF.2012.6160120.
ieee: 'Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “A 245 GHz CB LNA and
SHM mixer in SiGe technology,” in SiRF 2012 (Silicon Monolithic Integrated
Circuits in RF Systems), 2012, pp. 5–8, doi: 10.1109/SiRF.2012.6160120.'
mla: Mao, Yanfei, et al. “A 245 GHz CB LNA and SHM Mixer in SiGe Technology.” SiRF
2012 (Silicon Monolithic Integrated Circuits in RF Systems), 2012, pp. 5–8,
doi:10.1109/SiRF.2012.6160120.
short: 'Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, in: SiRF 2012 (Silicon Monolithic
Integrated Circuits in RF Systems), 2012, pp. 5–8.'
conference:
end_date: 18.01.2012
start_date: 16.01.2012
date_created: 2021-09-14T13:01:30Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/SiRF.2012.6160120
language:
- iso: eng
page: 5-8
publication: SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)
publication_identifier:
eisbn:
- 978-1-4577-1318-7
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6160120
status: public
title: A 245 GHz CB LNA and SHM mixer in SiGe technology
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24419'
abstract:
- lang: eng
text: In this publication an integrated reflectometer in SiGe BiCMOS technology
for sensor readout at 62 GHz is presented. The circuit includes an oscillator,
a six-port reflectometer, and a dummy sensor for verification purposes. The circuit
has a bandwidth of 8GHz at a center frequency of 62 GHz. It operates at 3.75V
supply voltage and consumes 282 mW. The measurement principle is demonstrated
and the scattering parameters of the dummy sensor are compared to measurement
of a breakout circuit with a commercially available vector network analyzer. The
circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies
an area of 0.9 mm 2 .
author:
- first_name: Benjamin
full_name: Laemmle, Benjamin
last_name: Laemmle
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Dietmar
full_name: Kissinger, Dietmar
last_name: Kissinger
- first_name: Robert
full_name: Weigel, Robert
last_name: Weigel
citation:
ama: 'Laemmle B, Schmalz K, Scheytt C, Kissinger D, Weigel R. A 62GHz Reflectometer
for Biomedical Sensor Readout in SiGe BiCMOS Technology. In: SiRF 2012 (Silicon
Monolithic Integrated Circuits in RF Systems). ; 2012. doi:10.1109/SiRF.2012.6160125'
apa: Laemmle, B., Schmalz, K., Scheytt, C., Kissinger, D., & Weigel, R. (2012).
A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology.
SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems). https://doi.org/10.1109/SiRF.2012.6160125
bibtex: '@inproceedings{Laemmle_Schmalz_Scheytt_Kissinger_Weigel_2012, title={A
62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology},
DOI={10.1109/SiRF.2012.6160125},
booktitle={SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)},
author={Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Kissinger,
Dietmar and Weigel, Robert}, year={2012} }'
chicago: Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Dietmar Kissinger,
and Robert Weigel. “A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe
BiCMOS Technology.” In SiRF 2012 (Silicon Monolithic Integrated Circuits in
RF Systems), 2012. https://doi.org/10.1109/SiRF.2012.6160125.
ieee: 'B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, and R. Weigel, “A 62GHz
Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology,” 2012,
doi: 10.1109/SiRF.2012.6160125.'
mla: Laemmle, Benjamin, et al. “A 62GHz Reflectometer for Biomedical Sensor Readout
in SiGe BiCMOS Technology.” SiRF 2012 (Silicon Monolithic Integrated Circuits
in RF Systems), 2012, doi:10.1109/SiRF.2012.6160125.
short: 'B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel, in: SiRF 2012
(Silicon Monolithic Integrated Circuits in RF Systems), 2012.'
conference:
end_date: 18.01.2012
start_date: 16.01.2012
date_created: 2021-09-14T13:01:32Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/SiRF.2012.6160125
language:
- iso: eng
publication: SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)
publication_identifier:
eisbn:
- 978-1-4577-1318-7
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6160125
status: public
title: A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24420'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Wojciech
full_name: Debski, Wojciech
last_name: Debski
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
- first_name: Wolfgang
full_name: Winkler, Wolfgang
last_name: Winkler
citation:
ama: 'Scheytt C, Debski W, Sun Y, Wang R, Winkler W. 122 GHz Radartransceiver und
Komponenten in 0.13ym SiGe BiCMOS. In: ; 2012.'
apa: Scheytt, C., Debski, W., Sun, Y., Wang, R., & Winkler, W. (2012). 122
GHz Radartransceiver und Komponenten in 0.13ym SiGe BiCMOS.
bibtex: '@inproceedings{Scheytt_Debski_Sun_Wang_Winkler_2012, title={122 GHz Radartransceiver
und Komponenten in 0.13ym SiGe BiCMOS}, author={Scheytt, Christoph and Debski,
Wojciech and Sun, Yaoming and Wang, Ruoyu and Winkler, Wolfgang}, year={2012}
}'
chicago: Scheytt, Christoph, Wojciech Debski, Yaoming Sun, Ruoyu Wang, and Wolfgang
Winkler. “122 GHz Radartransceiver Und Komponenten in 0.13ym SiGe BiCMOS,” 2012.
ieee: C. Scheytt, W. Debski, Y. Sun, R. Wang, and W. Winkler, “122 GHz Radartransceiver
und Komponenten in 0.13ym SiGe BiCMOS,” 2012.
mla: Scheytt, Christoph, et al. 122 GHz Radartransceiver Und Komponenten in 0.13ym
SiGe BiCMOS. 2012.
short: 'C. Scheytt, W. Debski, Y. Sun, R. Wang, W. Winkler, in: 2012.'
date_created: 2021-09-14T13:01:33Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
language:
- iso: eng
related_material:
link:
- relation: confirmation
url: http://a.xueshu.baidu.com/usercenter/paper/show?paperid=b58675ad66d82c4a5fe2f649bf89ec5b
status: public
title: 122 GHz Radartransceiver und Komponenten in 0.13ym SiGe BiCMOS
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24425'
abstract:
- lang: ger
text: 'PSSS-Dekodierschaltung, dadurch gekennzeichnet, dass das analoge PSSS-Eingangssignal
mit N Spreizsequenzen und N Verknüpfungselementen (z. B. Multiplizierer) verknüpft
werden und die Ausgangssignale der N Verknüpfungselemente mit N analogen Integrierern
auf integriert werden, dass die Integrierer jeweils zum Beginn der empfangenen
Spreizsequenzen gleichzeitig mit dem Signal SYNC zurückgesetzt werden, dass der
Integrator über die Dauer einer Code-Sequenz das Eingangssignal auf integriert,
dass nach der Integration an den Ausgängen der Integratoren jeweils das dekodierte
Datensignal anliegt, dass die Ausgangssignale der Integrierer mit N parallelen
einem AD-Wandler digitalisiert werden. '
application_date: 03.10.2012
application_number: '102012019342'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Scheytt C. Mixed-Signal PSSS-Empfänger. Published online 2012.
apa: Scheytt, C. (2012). Mixed-Signal PSSS-Empfänger.
bibtex: '@article{Scheytt_2012, title={Mixed-Signal PSSS-Empfänger}, author={Scheytt,
Christoph}, year={2012} }'
chicago: Scheytt, Christoph. “Mixed-Signal PSSS-Empfänger,” 2012.
ieee: C. Scheytt, “Mixed-Signal PSSS-Empfänger.” 2012.
mla: Scheytt, Christoph. Mixed-Signal PSSS-Empfänger. 2012.
short: C. Scheytt, (2012).
date_created: 2021-09-14T13:01:39Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
ipc: H04B 1/709
ipn: ' DE102012019342A1'
publication_date: 03.04.2014
related_material:
link:
- relation: confirmation
url: https://depatisnet.dpma.de/DepatisNet/depatisnet?action=bibdat&docid=DE102012019342A1
status: public
title: Mixed-Signal PSSS-Empfänger
type: patent
user_id: '15931'
year: '2012'
...
---
_id: '24543'
author:
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Stefan
full_name: Beer, Stefan
last_name: Beer
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
- first_name: Thomas
full_name: Zwick, Thomas
last_name: Zwick
citation:
ama: 'Sun Y, Beer S, Scheytt C, Wang R, Zwick T. mm-Wave SOC and SIP Design for
122 GHz Radar SSensor in the EU-FP7 Project SUCCESS. In: RF-MST Cluster Workshop
on MEMSWAVE 2012. ; 2012.'
apa: Sun, Y., Beer, S., Scheytt, C., Wang, R., & Zwick, T. (2012). mm-Wave SOC
and SIP Design for 122 GHz Radar SSensor in the EU-FP7 Project SUCCESS. RF-MST
Cluster Workshop on MEMSWAVE 2012.
bibtex: '@inproceedings{Sun_Beer_Scheytt_Wang_Zwick_2012, place={Antalya, Turkey},
title={mm-Wave SOC and SIP Design for 122 GHz Radar SSensor in the EU-FP7 Project
SUCCESS}, booktitle={RF-MST Cluster Workshop on MEMSWAVE 2012}, author={Sun, Yaoming
and Beer, Stefan and Scheytt, Christoph and Wang, Ruoyu and Zwick, Thomas}, year={2012}
}'
chicago: Sun, Yaoming, Stefan Beer, Christoph Scheytt, Ruoyu Wang, and Thomas Zwick.
“Mm-Wave SOC and SIP Design for 122 GHz Radar SSensor in the EU-FP7 Project SUCCESS.”
In RF-MST Cluster Workshop on MEMSWAVE 2012. Antalya, Turkey, 2012.
ieee: Y. Sun, S. Beer, C. Scheytt, R. Wang, and T. Zwick, “mm-Wave SOC and SIP Design
for 122 GHz Radar SSensor in the EU-FP7 Project SUCCESS,” Antalya, 2012.
mla: Sun, Yaoming, et al. “Mm-Wave SOC and SIP Design for 122 GHz Radar SSensor
in the EU-FP7 Project SUCCESS.” RF-MST Cluster Workshop on MEMSWAVE 2012,
2012.
short: 'Y. Sun, S. Beer, C. Scheytt, R. Wang, T. Zwick, in: RF-MST Cluster Workshop
on MEMSWAVE 2012, Antalya, Turkey, 2012.'
conference:
end_date: 04.07.2012
location: Antalya
start_date: 02.07.2012
date_created: 2021-09-16T08:29:14Z
date_updated: 2022-01-06T06:56:27Z
department:
- _id: '58'
language:
- iso: eng
place: Antalya, Turkey
publication: RF-MST Cluster Workshop on MEMSWAVE 2012
related_material:
link:
- relation: confirmation
url: https://delfmems.wordpress.com/2012/03/28/memswave-2012-2-4-july-2012-antalya-turkey/
status: public
title: mm-Wave SOC and SIP Design for 122 GHz Radar SSensor in the EU-FP7 Project
SUCCESS
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24544'
abstract:
- lang: eng
text: Design of a 40 Gb/s VCSEL driver IC capable of providing up to 10mA current
to common-cathode VCSELs is presented. Using low-power bandwidth enhancement techniques,
a prototype IC is successfully developed in 180-GHz SiGe BiCMOS technology. Measured
results show 34 GHz of bandwidth, open eye diagram with rise/fall time below 10
ps, and power dissipation of 130 mW.
author:
- first_name: Behnam
full_name: Sedighi, Behnam
last_name: Sedighi
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Sedighi B, Scheytt C. 40 Gb/s VCSEL driver IC with a new output current and
pre-emphasis adjustment method. In: Microwave Symposium Digest (MTT), 2012
IEEE MTT-S International. ; 2012:1-3. doi:10.1109/MWSYM.2012.6259501'
apa: Sedighi, B., & Scheytt, C. (2012). 40 Gb/s VCSEL driver IC with a new output
current and pre-emphasis adjustment method. Microwave Symposium Digest (MTT),
2012 IEEE MTT-S International, 1–3. https://doi.org/10.1109/MWSYM.2012.6259501
bibtex: '@inproceedings{Sedighi_Scheytt_2012, title={40 Gb/s VCSEL driver IC with
a new output current and pre-emphasis adjustment method}, DOI={10.1109/MWSYM.2012.6259501},
booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi,
Behnam and Scheytt, Christoph}, year={2012}, pages={1–3} }'
chicago: Sedighi, Behnam, and Christoph Scheytt. “40 Gb/s VCSEL Driver IC with a
New Output Current and Pre-Emphasis Adjustment Method.” In Microwave Symposium
Digest (MTT), 2012 IEEE MTT-S International, 1–3, 2012. https://doi.org/10.1109/MWSYM.2012.6259501.
ieee: 'B. Sedighi and C. Scheytt, “40 Gb/s VCSEL driver IC with a new output current
and pre-emphasis adjustment method,” in Microwave Symposium Digest (MTT), 2012
IEEE MTT-S International, Montreal, QC, Canada, 2012, pp. 1–3, doi: 10.1109/MWSYM.2012.6259501.'
mla: Sedighi, Behnam, and Christoph Scheytt. “40 Gb/s VCSEL Driver IC with a New
Output Current and Pre-Emphasis Adjustment Method.” Microwave Symposium Digest
(MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi:10.1109/MWSYM.2012.6259501.
short: 'B. Sedighi, C. Scheytt, in: Microwave Symposium Digest (MTT), 2012 IEEE
MTT-S International, 2012, pp. 1–3.'
conference:
end_date: 22.06.2012
location: ' Montreal, QC, Canada'
start_date: 17.06.2021
date_created: 2021-09-16T08:29:15Z
date_updated: 2022-01-06T06:56:27Z
department:
- _id: '58'
doi: 10.1109/MWSYM.2012.6259501
language:
- iso: eng
page: 1 -3
publication: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
publication_identifier:
eisbn:
- 978-1-4673-1088-8
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6259501
status: public
title: 40 Gb/s VCSEL driver IC with a new output current and pre-emphasis adjustment
method
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24545'
abstract:
- lang: eng
text: this paper presents a new circuit for high-speed BiCMOS track-and-holds. The
proposed approach improves the signal feedthrough in the hold mode and the bandwidth
in the tracking mode. A prototype circuit is implemented in a 0.13 µm BiCMOS technology,
operating at 10 GS/s and consuming 19 mW from 3.3 V supply. It is shown that the
circuit is capable of providing a harmonic distortion below −50 dB.
author:
- first_name: Behnam
full_name: Sedighi, Behnam
last_name: Sedighi
- first_name: Yevgen
full_name: Borokhovych, Yevgen
last_name: Borokhovych
- first_name: Hans
full_name: Gustat, Hans
last_name: Gustat
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Sedighi B, Borokhovych Y, Gustat H, Scheytt C. Low-power BiCMOS track-and-hold
circuit with reduced signal feedthrough. In: Microwave Symposium Digest (MTT),
2012 IEEE MTT-S International. ; 2012:1-3. doi:10.1109/MWSYM.2012.6259505'
apa: Sedighi, B., Borokhovych, Y., Gustat, H., & Scheytt, C. (2012). Low-power
BiCMOS track-and-hold circuit with reduced signal feedthrough. Microwave Symposium
Digest (MTT), 2012 IEEE MTT-S International, 1–3. https://doi.org/10.1109/MWSYM.2012.6259505
bibtex: '@inproceedings{Sedighi_Borokhovych_Gustat_Scheytt_2012, title={Low-power
BiCMOS track-and-hold circuit with reduced signal feedthrough}, DOI={10.1109/MWSYM.2012.6259505},
booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi,
Behnam and Borokhovych, Yevgen and Gustat, Hans and Scheytt, Christoph}, year={2012},
pages={1–3} }'
chicago: Sedighi, Behnam, Yevgen Borokhovych, Hans Gustat, and Christoph Scheytt.
“Low-Power BiCMOS Track-and-Hold Circuit with Reduced Signal Feedthrough.” In
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 1–3, 2012.
https://doi.org/10.1109/MWSYM.2012.6259505.
ieee: 'B. Sedighi, Y. Borokhovych, H. Gustat, and C. Scheytt, “Low-power BiCMOS
track-and-hold circuit with reduced signal feedthrough,” in Microwave Symposium
Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi: 10.1109/MWSYM.2012.6259505.'
mla: Sedighi, Behnam, et al. “Low-Power BiCMOS Track-and-Hold Circuit with Reduced
Signal Feedthrough.” Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International,
2012, pp. 1–3, doi:10.1109/MWSYM.2012.6259505.
short: 'B. Sedighi, Y. Borokhovych, H. Gustat, C. Scheytt, in: Microwave Symposium
Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3.'
date_created: 2021-09-16T08:29:16Z
date_updated: 2022-01-06T06:56:27Z
department:
- _id: '58'
doi: 10.1109/MWSYM.2012.6259505
language:
- iso: eng
page: 1 -3
publication: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6259505
status: public
title: Low-power BiCMOS track-and-hold circuit with reduced signal feedthrough
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24546'
abstract:
- lang: eng
text: this paper investigates low-power design of high-speed and high-swing electronic
driver circuits. A method to estimate and optimize the power consumption of such
driver ICs is presented. A 20-Gb/s driver circuit is fabricated in 0.25 µm SiGe
BiCMOS process and an output swing of 2.5 V pp is measured. The driver consumes
0.75 W from 5 V supply.
author:
- first_name: Behnam
full_name: Sedighi, Behnam
last_name: Sedighi
- first_name: Philip
full_name: Ostrovskyy, Philip
last_name: Ostrovskyy
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Karl Stephan Christian
full_name: Stille, Karl Stephan Christian
last_name: Stille
- first_name: Joachim
full_name: Böcker, Joachim
last_name: Böcker
citation:
ama: 'Sedighi B, Ostrovskyy P, Scheytt C, Stille KSC, Böcker J. Low-power 20-Gb/s
SiGe BiCMOS driver with 2.5 V output swing. In: Microwave Symposium Digest
(MTT), 2012 IEEE MTT-S International. ; 2012:1-3. doi:10.1109/MWSYM.2012.6259502'
apa: Sedighi, B., Ostrovskyy, P., Scheytt, C., Stille, K. S. C., & Böcker, J.
(2012). Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. Microwave
Symposium Digest (MTT), 2012 IEEE MTT-S International, 1–3. https://doi.org/10.1109/MWSYM.2012.6259502
bibtex: '@inproceedings{Sedighi_Ostrovskyy_Scheytt_Stille_Böcker_2012, title={Low-power
20-Gb/s SiGe BiCMOS driver with 2.5 V output swing}, DOI={10.1109/MWSYM.2012.6259502},
booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi,
Behnam and Ostrovskyy, Philip and Scheytt, Christoph and Stille, Karl Stephan
Christian and Böcker, Joachim}, year={2012}, pages={1–3} }'
chicago: Sedighi, Behnam, Philip Ostrovskyy, Christoph Scheytt, Karl Stephan Christian
Stille, and Joachim Böcker. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output
Swing.” In Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International,
1–3, 2012. https://doi.org/10.1109/MWSYM.2012.6259502.
ieee: 'B. Sedighi, P. Ostrovskyy, C. Scheytt, K. S. C. Stille, and J. Böcker, “Low-power
20-Gb/s SiGe BiCMOS driver with 2.5 V output swing,” in Microwave Symposium
Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi: 10.1109/MWSYM.2012.6259502.'
mla: Sedighi, Behnam, et al. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output
Swing.” Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International,
2012, pp. 1–3, doi:10.1109/MWSYM.2012.6259502.
short: 'B. Sedighi, P. Ostrovskyy, C. Scheytt, K.S.C. Stille, J. Böcker, in: Microwave
Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3.'
date_created: 2021-09-16T08:29:18Z
date_updated: 2022-01-06T06:56:27Z
department:
- _id: '58'
doi: 10.1109/MWSYM.2012.6259502
language:
- iso: eng
page: 1 -3
publication: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6259502
status: public
title: Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24423'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
citation:
ama: 'Scheytt C, Sun Y. 122 GHz FMCW Radar Transceiver and Components in 0.13µm
SiGe BiCMOS Technology. In: System, MMIC and Package Design for Low-Cost Radar
Sensor. ; 2012.'
apa: Scheytt, C., & Sun, Y. (2012). 122 GHz FMCW Radar Transceiver and Components
in 0.13µm SiGe BiCMOS Technology. System, MMIC and Package Design for Low-Cost
Radar Sensor.
bibtex: '@inproceedings{Scheytt_Sun_2012, place={Montreal}, title={122 GHz FMCW
Radar Transceiver and Components in 0.13µm SiGe BiCMOS Technology}, booktitle={System,
MMIC and Package Design for Low-Cost Radar Sensor}, author={Scheytt, Christoph
and Sun, Yaoming}, year={2012} }'
chicago: Scheytt, Christoph, and Yaoming Sun. “122 GHz FMCW Radar Transceiver and
Components in 0.13µm SiGe BiCMOS Technology.” In System, MMIC and Package Design
for Low-Cost Radar Sensor. Montreal, 2012.
ieee: C. Scheytt and Y. Sun, “122 GHz FMCW Radar Transceiver and Components in 0.13µm
SiGe BiCMOS Technology,” 2012.
mla: Scheytt, Christoph, and Yaoming Sun. “122 GHz FMCW Radar Transceiver and Components
in 0.13µm SiGe BiCMOS Technology.” System, MMIC and Package Design for Low-Cost
Radar Sensor, 2012.
short: 'C. Scheytt, Y. Sun, in: System, MMIC and Package Design for Low-Cost Radar
Sensor, Montreal, 2012.'
date_created: 2021-09-14T13:01:37Z
date_updated: 2022-01-10T11:36:00Z
department:
- _id: '58'
language:
- iso: eng
place: Montreal
publication: System, MMIC and Package Design for Low-Cost Radar Sensor
related_material:
link:
- relation: confirmation
url: http://a.xueshu.baidu.com/usercenter/paper/show?paperid=b58675ad66d82c4a5fe2f649bf89ec5b
status: public
title: 122 GHz FMCW Radar Transceiver and Components in 0.13µm SiGe BiCMOS Technology
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24421'
author:
- first_name: Andreas
full_name: Koelnberger, Andreas
last_name: Koelnberger
- first_name: Frank
full_name: Herzel, Frank
last_name: Herzel
- first_name: Heinz-Volker
full_name: Heyer, Heinz-Volker
last_name: Heyer
- first_name: Enrico
full_name: Lia, Enrico
last_name: Lia
- first_name: Petri
full_name: Piironen, Petri
last_name: Piironen
- first_name: Holger
full_name: Telle, Holger
last_name: Telle
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Koelnberger A, Herzel F, Heyer H-V, et al. Spurs and Phase Noise for an integrated
8-12 GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS . In: Simulations and
Measurements of In-Band. ; 2012.'
apa: Koelnberger, A., Herzel, F., Heyer, H.-V., Lia, E., Piironen, P., Telle, H.,
& Scheytt, C. (2012). Spurs and Phase Noise for an integrated 8-12 GHZ Fractional-N
PLL Synthesizer in SiGe BiCMOS . Simulations and Measurements of In-Band.
bibtex: '@inproceedings{Koelnberger_Herzel_Heyer_Lia_Piironen_Telle_Scheytt_2012,
title={Spurs and Phase Noise for an integrated 8-12 GHZ Fractional-N PLL Synthesizer
in SiGe BiCMOS }, booktitle={Simulations and Measurements of In-Band}, author={Koelnberger,
Andreas and Herzel, Frank and Heyer, Heinz-Volker and Lia, Enrico and Piironen,
Petri and Telle, Holger and Scheytt, Christoph}, year={2012} }'
chicago: Koelnberger, Andreas, Frank Herzel, Heinz-Volker Heyer, Enrico Lia, Petri
Piironen, Holger Telle, and Christoph Scheytt. “Spurs and Phase Noise for an Integrated
8-12 GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS .” In Simulations and
Measurements of In-Band, 2012.
ieee: A. Koelnberger et al., “Spurs and Phase Noise for an integrated 8-12
GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS ,” 2012.
mla: Koelnberger, Andreas, et al. “Spurs and Phase Noise for an Integrated 8-12
GHZ Fractional-N PLL Synthesizer in SiGe BiCMOS .” Simulations and Measurements
of In-Band, 2012.
short: 'A. Koelnberger, F. Herzel, H.-V. Heyer, E. Lia, P. Piironen, H. Telle, C.
Scheytt, in: Simulations and Measurements of In-Band, 2012.'
date_created: 2021-09-14T13:01:34Z
date_updated: 2022-01-11T09:24:17Z
department:
- _id: '58'
language:
- iso: eng
publication: Simulations and Measurements of In-Band
status: public
title: 'Spurs and Phase Noise for an integrated 8-12 GHZ Fractional-N PLL Synthesizer
in SiGe BiCMOS '
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24400'
abstract:
- lang: ger
text: Chipantenne (102), umfassend mindestens einen Strahler (114,116), der sich
parallel zu einer Hauptoberfläche eines die Chipantenne tragenden Halbleitersubstrats
(104) erstreckt, wobei der Strahler auf einer inselartigen Trägerzone (122,124)
des Halbleitersubstrats angeordnet ist, die von mindestens einem vollständig mit
einem Gas gefüllten Graben (126,128) umgeben ist, welcher das Halbleitersubstrat
in dessen gesamter Tiefenerstreckung durchdringt und durch mindestens einen Haltesteg
(130,132,134,136) überbrückt ist, welcher eine tragende Verbindung zwischen der
Trägerzone und dem übrigen Halbleitersubstrat bildet.
- lang: eng
text: The invention relates to a chip antenna (102) comprising at least one emitter
(114, 116) which extends parallel to a main surface of a semiconductor substrate
(104) supporting the chip antenna. The emitter is arranged on an island-like support
zone (122, 124) of the semiconductor substrate, said support zone being surrounded
by at least one trench (126, 128) which is completely filled with a gas. The trench
passes through the entire depth of the semiconductor substrate and is bridged
by at least one retaining web (130, 132, 134, 136) which forms a supporting connection
between the support zone and the rest of the semiconductor substrate.
application_date: 23.12.2013
author:
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Mehmet
full_name: Kaynak, Mehmet
last_name: Kaynak
- first_name: J. Christoph
full_name: Scheytt, J. Christoph
id: '37144'
last_name: Scheytt
orcid: https://orcid.org/0000-0002-5950-6618
citation:
ama: Wang R, Sun Y, Kaynak M, Scheytt JC. Chip-Antenne, Elektronisches Bauelement
und Herstellungsverfahren. Published online 2012.
apa: Wang, R., Sun, Y., Kaynak, M., & Scheytt, J. C. (2012). Chip-Antenne,
Elektronisches Bauelement und Herstellungsverfahren.
bibtex: '@article{Wang_Sun_Kaynak_Scheytt_2012, title={Chip-Antenne, Elektronisches
Bauelement und Herstellungsverfahren}, author={Wang, Ruoyu and Sun, Yaoming and
Kaynak, Mehmet and Scheytt, J. Christoph}, year={2012} }'
chicago: Wang, Ruoyu, Yaoming Sun, Mehmet Kaynak, and J. Christoph Scheytt. “Chip-Antenne,
Elektronisches Bauelement Und Herstellungsverfahren,” 2012.
ieee: R. Wang, Y. Sun, M. Kaynak, and J. C. Scheytt, “Chip-Antenne, Elektronisches
Bauelement und Herstellungsverfahren.” 2012.
mla: Wang, Ruoyu, et al. Chip-Antenne, Elektronisches Bauelement Und Herstellungsverfahren.
2012.
short: R. Wang, Y. Sun, M. Kaynak, J.C. Scheytt, (2012).
date_created: 2021-09-14T12:53:08Z
date_updated: 2023-01-31T14:16:12Z
department:
- _id: '58'
ipc: 'PCT/EP2013/077951 '
ipn: WO/2014/102260
publication_date: '03.07.2014 '
related_material:
link:
- relation: confirmation
url: https://patentscope.wipo.int/search/de/detail.jsf?docId=WO2014102260
status: public
title: Chip-Antenne, Elektronisches Bauelement und Herstellungsverfahren
type: patent
user_id: '15931'
year: '2012'
...
---
_id: '45774'
author:
- first_name: Sabbir A.
full_name: Osmany, Sabbir A.
last_name: Osmany
- first_name: Frank
full_name: Herzel, Frank
last_name: Herzel
- first_name: J. Christoph
full_name: Scheytt, J. Christoph
id: '37144'
last_name: Scheytt
orcid: '0000-0002-5950-6618 '
citation:
ama: Osmany SA, Herzel F, Scheytt JC. An integrated 0.6–4.6 GHz, 5–7 GHz, 10–14
GHz, and 20–28 GHz frequency synthesizer for software-defined radio applications.
IEEE Journal of Solid-State Circuits. 2010;45(9):1657-1668. doi:10.1109/JSSC.2010.2051476
apa: Osmany, S. A., Herzel, F., & Scheytt, J. C. (2010). An integrated 0.6–4.6
GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz frequency synthesizer for software-defined
radio applications. IEEE Journal of Solid-State Circuits, 45(9),
1657–1668. https://doi.org/10.1109/JSSC.2010.2051476
bibtex: '@article{Osmany_Herzel_Scheytt_2010, title={An integrated 0.6–4.6 GHz,
5–7 GHz, 10–14 GHz, and 20–28 GHz frequency synthesizer for software-defined radio
applications}, volume={45}, DOI={10.1109/JSSC.2010.2051476},
number={9}, journal={IEEE Journal of Solid-State Circuits}, author={Osmany, Sabbir
A. and Herzel, Frank and Scheytt, J. Christoph}, year={2010}, pages={1657–1668}
}'
chicago: 'Osmany, Sabbir A., Frank Herzel, and J. Christoph Scheytt. “An Integrated
0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz Frequency Synthesizer for Software-Defined
Radio Applications.” IEEE Journal of Solid-State Circuits 45, no. 9 (2010):
1657–68. https://doi.org/10.1109/JSSC.2010.2051476.'
ieee: 'S. A. Osmany, F. Herzel, and J. C. Scheytt, “An integrated 0.6–4.6 GHz, 5–7
GHz, 10–14 GHz, and 20–28 GHz frequency synthesizer for software-defined radio
applications,” IEEE Journal of Solid-State Circuits, vol. 45, no. 9, pp.
1657–1668, 2010, doi: 10.1109/JSSC.2010.2051476.'
mla: Osmany, Sabbir A., et al. “An Integrated 0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and
20–28 GHz Frequency Synthesizer for Software-Defined Radio Applications.” IEEE
Journal of Solid-State Circuits, vol. 45, no. 9, 2010, pp. 1657–68, doi:10.1109/JSSC.2010.2051476.
short: S.A. Osmany, F. Herzel, J.C. Scheytt, IEEE Journal of Solid-State Circuits
45 (2010) 1657–1668.
date_created: 2023-06-26T10:26:17Z
date_updated: 2023-06-26T10:26:31Z
department:
- _id: '58'
doi: 10.1109/JSSC.2010.2051476
intvolume: ' 45'
issue: '9'
language:
- iso: eng
page: 1657-1668
publication: IEEE Journal of Solid-State Circuits
status: public
title: An integrated 0.6–4.6 GHz, 5–7 GHz, 10–14 GHz, and 20–28 GHz frequency synthesizer
for software-defined radio applications
type: journal_article
user_id: '14931'
volume: 45
year: '2010'
...
---
_id: '45772'
author:
- first_name: Frank
full_name: Herzel, Frank
last_name: Herzel
- first_name: 'Sabbir A. '
full_name: 'Osmany, Sabbir A. '
last_name: Osmany
- first_name: J. Christoph
full_name: Scheytt, J. Christoph
id: '37144'
last_name: Scheytt
orcid: '0000-0002-5950-6618 '
citation:
ama: 'Herzel F, Osmany SA, Scheytt JC. Analytical Phase-Noise Modeling and Charge
Pump Optimization for Fractional-$N$ PLLs. IEEE Transactions on Circuits and
Systems I: Regular Papers. 2010;57(8):1914-1924.'
apa: 'Herzel, F., Osmany, S. A., & Scheytt, J. C. (2010). Analytical Phase-Noise
Modeling and Charge Pump Optimization for Fractional-$N$ PLLs. IEEE Transactions
on Circuits and Systems I: Regular Papers, 57(8), 1914–1924.'
bibtex: '@article{Herzel_Osmany_Scheytt_2010, title={Analytical Phase-Noise Modeling
and Charge Pump Optimization for Fractional-$N$ PLLs}, volume={57}, number={8},
journal={IEEE Transactions on Circuits and Systems I: Regular Papers}, author={Herzel,
Frank and Osmany, Sabbir A. and Scheytt, J. Christoph}, year={2010}, pages={1914–1924}
}'
chicago: 'Herzel, Frank, Sabbir A. Osmany, and J. Christoph Scheytt. “Analytical
Phase-Noise Modeling and Charge Pump Optimization for Fractional-$N$ PLLs.” IEEE
Transactions on Circuits and Systems I: Regular Papers 57, no. 8 (2010): 1914–24.'
ieee: 'F. Herzel, S. A. Osmany, and J. C. Scheytt, “Analytical Phase-Noise Modeling
and Charge Pump Optimization for Fractional-$N$ PLLs,” IEEE Transactions on
Circuits and Systems I: Regular Papers, vol. 57, no. 8, pp. 1914–1924, 2010.'
mla: 'Herzel, Frank, et al. “Analytical Phase-Noise Modeling and Charge Pump Optimization
for Fractional-$N$ PLLs.” IEEE Transactions on Circuits and Systems I: Regular
Papers, vol. 57, no. 8, 2010, pp. 1914–24.'
short: 'F. Herzel, S.A. Osmany, J.C. Scheytt, IEEE Transactions on Circuits and
Systems I: Regular Papers 57 (2010) 1914–1924.'
date_created: 2023-06-26T10:20:42Z
date_updated: 2023-06-26T10:20:48Z
department:
- _id: '58'
intvolume: ' 57'
issue: '8'
language:
- iso: eng
page: 1914-1924
publication: 'IEEE Transactions on Circuits and Systems I: Regular Papers'
status: public
title: Analytical Phase-Noise Modeling and Charge Pump Optimization for Fractional-$N$
PLLs
type: journal_article
user_id: '14931'
volume: 57
year: '2010'
...