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Reuter, “Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy,” <i>Communications materials</i>, 2024, doi: <a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">10.48550/ARXIV.2410.15487</a>.","apa":"Henksmeier, T., &#38; Reuter, D. (2024). Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy. <i>Communications Materials</i>. <a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">https://doi.org/10.48550/ARXIV.2410.15487</a>","short":"T. Henksmeier, D. Reuter, Communications Materials (2024).","mla":"Henksmeier, Tobias, and Dirk Reuter. “Low-Temperature Fabrication of Amorphous Carbon Films as a Universal Template for Remote Epitaxy.” <i>Communications Materials</i>, 2024, doi:<a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">10.48550/ARXIV.2410.15487</a>.","bibtex":"@article{Henksmeier_Reuter_2024, title={Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy}, DOI={<a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">10.48550/ARXIV.2410.15487</a>}, journal={Communications materials}, author={Henksmeier, Tobias and Reuter, Dirk}, year={2024} }"},"year":"2024","doi":"10.48550/ARXIV.2410.15487","title":"Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy","author":[{"last_name":"Henksmeier","full_name":"Henksmeier, Tobias","id":"42539","first_name":"Tobias"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"}],"date_created":"2024-12-10T07:42:57Z","date_updated":"2024-12-10T07:45:56Z"},{"publication_status":"published","year":"2022","citation":{"chicago":"Henksmeier, Tobias, Johann Friedemann Schulz, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Ana M. Sanchez, Markus Voigt, Guido Grundmeier, and Dirk Reuter. “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene Covered GaAs(001) Substrates.” <i>Journal of Crystal Growth</i> 593 (2022). <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>.","ieee":"T. Henksmeier <i>et al.</i>, “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates,” <i>Journal of Crystal Growth</i>, vol. 593, Art. no. 126756, 2022, doi: <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>.","ama":"Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates. <i>Journal of Crystal Growth</i>. 2022;593. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>","bibtex":"@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022, title={Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates}, volume={593}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>}, number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier}, author={Henksmeier, Tobias and Schulz, Johann Friedemann and Kluth, Elias and Feneberg, Martin and Goldhahn, Rüdiger and Sanchez, Ana M. and Voigt, Markus and Grundmeier, Guido and Reuter, Dirk}, year={2022} }","short":"T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, D. 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Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates. <i>Journal of Crystal Growth</i>, <i>593</i>, Article 126756. <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>"},"intvolume":"       593","date_updated":"2023-01-13T16:02:06Z","publisher":"Elsevier","date_created":"2023-01-13T15:40:17Z","author":[{"full_name":"Henksmeier, Tobias","id":"42539","last_name":"Henksmeier","first_name":"Tobias"},{"first_name":"Johann Friedemann","last_name":"Schulz","full_name":"Schulz, Johann Friedemann"},{"first_name":"Elias","full_name":"Kluth, Elias","last_name":"Kluth"},{"full_name":"Feneberg, Martin","last_name":"Feneberg","first_name":"Martin"},{"full_name":"Goldhahn, Rüdiger","last_name":"Goldhahn","first_name":"Rüdiger"},{"first_name":"Ana M.","full_name":"Sanchez, Ana M.","last_name":"Sanchez"},{"id":"15182","full_name":"Voigt, Markus","last_name":"Voigt","first_name":"Markus"},{"last_name":"Grundmeier","full_name":"Grundmeier, Guido","id":"194","first_name":"Guido"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"}],"volume":593,"title":"Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates","doi":"10.1016/j.jcrysgro.2022.126756","type":"journal_article","publication":"Journal of Crystal Growth","status":"public","project":[{"_id":"63","name":"TRR 142 - A6: TRR 142 - Subproject A6"}],"_id":"36804","user_id":"42539","department":[{"_id":"15"},{"_id":"2"},{"_id":"292"},{"_id":"230"}],"article_number":"126756","language":[{"iso":"eng"}]}]