[{"status":"public","title":"Calculation of reflectance anisotropy for semiconductor surface exploration","year":"2005","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"id":"468","first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero"}],"publication_status":"published","date_updated":"2025-12-05T13:26:19Z","intvolume":"       242","page":"2751-2764","_id":"13698","language":[{"iso":"eng"}],"user_id":"16199","doi":"10.1002/pssb.200541112","volume":242,"issue":"13","publication":"physica status solidi (b)","citation":{"mla":"Schmidt, Wolf Gero. “Calculation of Reflectance Anisotropy for Semiconductor Surface Exploration.” <i>Physica Status Solidi (b)</i>, vol. 242, no. 13, 2005, pp. 2751–64, doi:<a href=\"https://doi.org/10.1002/pssb.200541112\">10.1002/pssb.200541112</a>.","bibtex":"@article{Schmidt_2005, title={Calculation of reflectance anisotropy for semiconductor surface exploration}, volume={242}, DOI={<a href=\"https://doi.org/10.1002/pssb.200541112\">10.1002/pssb.200541112</a>}, number={13}, journal={physica status solidi (b)}, author={Schmidt, Wolf Gero}, year={2005}, pages={2751–2764} }","ama":"Schmidt WG. Calculation of reflectance anisotropy for semiconductor surface exploration. <i>physica status solidi (b)</i>. 2005;242(13):2751-2764. doi:<a href=\"https://doi.org/10.1002/pssb.200541112\">10.1002/pssb.200541112</a>","ieee":"W. G. Schmidt, “Calculation of reflectance anisotropy for semiconductor surface exploration,” <i>physica status solidi (b)</i>, vol. 242, no. 13, pp. 2751–2764, 2005, doi: <a href=\"https://doi.org/10.1002/pssb.200541112\">10.1002/pssb.200541112</a>.","apa":"Schmidt, W. G. (2005). Calculation of reflectance anisotropy for semiconductor surface exploration. <i>Physica Status Solidi (b)</i>, <i>242</i>(13), 2751–2764. <a href=\"https://doi.org/10.1002/pssb.200541112\">https://doi.org/10.1002/pssb.200541112</a>","chicago":"Schmidt, Wolf Gero. “Calculation of Reflectance Anisotropy for Semiconductor Surface Exploration.” <i>Physica Status Solidi (b)</i> 242, no. 13 (2005): 2751–64. <a href=\"https://doi.org/10.1002/pssb.200541112\">https://doi.org/10.1002/pssb.200541112</a>.","short":"W.G. Schmidt, Physica Status Solidi (b) 242 (2005) 2751–2764."},"date_created":"2019-10-09T11:29:20Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}]},{"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","date_created":"2019-10-09T11:50:16Z","citation":{"short":"M. Preuss, W.G. Schmidt, F. Bechstedt, Physical Review Letters 94 (2005).","chicago":"Preuss, M., Wolf Gero Schmidt, and F. Bechstedt. “Coulombic Amino Group-Metal Bonding: Adsorption of Adenine on Cu(110).” <i>Physical Review Letters</i> 94 (2005). <a href=\"https://doi.org/10.1103/physrevlett.94.236102\">https://doi.org/10.1103/physrevlett.94.236102</a>.","ieee":"M. Preuss, W. G. Schmidt, and F. Bechstedt, “Coulombic Amino Group-Metal Bonding: Adsorption of Adenine on Cu(110),” <i>Physical Review Letters</i>, vol. 94, 2005, doi: <a href=\"https://doi.org/10.1103/physrevlett.94.236102\">10.1103/physrevlett.94.236102</a>.","apa":"Preuss, M., Schmidt, W. G., &#38; Bechstedt, F. (2005). Coulombic Amino Group-Metal Bonding: Adsorption of Adenine on Cu(110). <i>Physical Review Letters</i>, <i>94</i>. <a href=\"https://doi.org/10.1103/physrevlett.94.236102\">https://doi.org/10.1103/physrevlett.94.236102</a>","bibtex":"@article{Preuss_Schmidt_Bechstedt_2005, title={Coulombic Amino Group-Metal Bonding: Adsorption of Adenine on Cu(110)}, volume={94}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.94.236102\">10.1103/physrevlett.94.236102</a>}, journal={Physical Review Letters}, author={Preuss, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={2005} }","ama":"Preuss M, Schmidt WG, Bechstedt F. Coulombic Amino Group-Metal Bonding: Adsorption of Adenine on Cu(110). <i>Physical Review Letters</i>. 2005;94. doi:<a href=\"https://doi.org/10.1103/physrevlett.94.236102\">10.1103/physrevlett.94.236102</a>","mla":"Preuss, M., et al. “Coulombic Amino Group-Metal Bonding: Adsorption of Adenine on Cu(110).” <i>Physical Review Letters</i>, vol. 94, 2005, doi:<a href=\"https://doi.org/10.1103/physrevlett.94.236102\">10.1103/physrevlett.94.236102</a>."},"publication":"Physical Review Letters","volume":94,"user_id":"16199","doi":"10.1103/physrevlett.94.236102","language":[{"iso":"eng"}],"_id":"13703","intvolume":"        94","publication_status":"published","date_updated":"2025-12-05T13:26:36Z","publication_identifier":{"issn":["0031-9007","1079-7114"]},"author":[{"full_name":"Preuss, M.","last_name":"Preuss","first_name":"M."},{"full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","id":"468"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"title":"Coulombic Amino Group-Metal Bonding: Adsorption of Adenine on Cu(110)","status":"public","year":"2005"},{"issue":"24","publication":"Physical Review B","citation":{"apa":"Hahn, P. H., Schmidt, W. G., &#38; Bechstedt, F. (2005). Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics. <i>Physical Review B</i>, <i>72</i>(24). <a href=\"https://doi.org/10.1103/physrevb.72.245425\">https://doi.org/10.1103/physrevb.72.245425</a>","ieee":"P. H. Hahn, W. G. Schmidt, and F. Bechstedt, “Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics,” <i>Physical Review B</i>, vol. 72, no. 24, 2005, doi: <a href=\"https://doi.org/10.1103/physrevb.72.245425\">10.1103/physrevb.72.245425</a>.","chicago":"Hahn, P. H., Wolf Gero Schmidt, and F. Bechstedt. “Molecular Electronic Excitations Calculated from a Solid-State Approach: Methodology and Numerics.” <i>Physical Review B</i> 72, no. 24 (2005). <a href=\"https://doi.org/10.1103/physrevb.72.245425\">https://doi.org/10.1103/physrevb.72.245425</a>.","short":"P.H. Hahn, W.G. Schmidt, F. Bechstedt, Physical Review B 72 (2005).","mla":"Hahn, P. H., et al. “Molecular Electronic Excitations Calculated from a Solid-State Approach: Methodology and Numerics.” <i>Physical Review B</i>, vol. 72, no. 24, 2005, doi:<a href=\"https://doi.org/10.1103/physrevb.72.245425\">10.1103/physrevb.72.245425</a>.","ama":"Hahn PH, Schmidt WG, Bechstedt F. Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics. <i>Physical Review B</i>. 2005;72(24). doi:<a href=\"https://doi.org/10.1103/physrevb.72.245425\">10.1103/physrevb.72.245425</a>","bibtex":"@article{Hahn_Schmidt_Bechstedt_2005, title={Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics}, volume={72}, DOI={<a href=\"https://doi.org/10.1103/physrevb.72.245425\">10.1103/physrevb.72.245425</a>}, number={24}, journal={Physical Review B}, author={Hahn, P. H. and Schmidt, Wolf Gero and Bechstedt, F.}, year={2005} }"},"type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"date_created":"2019-10-15T08:24:29Z","publication_status":"published","date_updated":"2025-12-16T07:40:50Z","intvolume":"        72","status":"public","title":"Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics","year":"2005","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"first_name":"P. H.","last_name":"Hahn","full_name":"Hahn, P. H."},{"orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","id":"468"},{"last_name":"Bechstedt","first_name":"F.","full_name":"Bechstedt, F."}],"user_id":"16199","doi":"10.1103/physrevb.72.245425","volume":72,"_id":"13846","language":[{"iso":"eng"}]},{"has_accepted_license":"1","status":"public","ddc":["530"],"user_id":"158","volume":241,"page":"R60-R62","_id":"4272","publisher":"Wiley","file_date_updated":"2018-08-29T09:46:32Z","citation":{"chicago":"Zeiser, Andreas, Norbert Bücking, Jörg Götte, Jens Förstner, Patrick Hahn, Wolf Gero Schmidt, and Andreas Knorr. “Dynamics of the Phonon-Induced Electron Transfer between Semiconductor Bulk and Surface States.” <i>Physica Status Solidi (b)</i> 241, no. 12 (2004): R60–62. <a href=\"https://doi.org/10.1002/pssb.200409060\">https://doi.org/10.1002/pssb.200409060</a>.","short":"A. Zeiser, N. Bücking, J. Götte, J. Förstner, P. Hahn, W.G. Schmidt, A. Knorr, Physica Status Solidi (b) 241 (2004) R60–R62.","ieee":"A. Zeiser <i>et al.</i>, “Dynamics of the phonon-induced electron transfer between semiconductor bulk and surface states,” <i>physica status solidi (b)</i>, vol. 241, no. 12, pp. R60–R62, 2004, doi: <a href=\"https://doi.org/10.1002/pssb.200409060\">10.1002/pssb.200409060</a>.","apa":"Zeiser, A., Bücking, N., Götte, J., Förstner, J., Hahn, P., Schmidt, W. G., &#38; Knorr, A. (2004). Dynamics of the phonon-induced electron transfer between semiconductor bulk and surface states. <i>Physica Status Solidi (b)</i>, <i>241</i>(12), R60–R62. <a href=\"https://doi.org/10.1002/pssb.200409060\">https://doi.org/10.1002/pssb.200409060</a>","bibtex":"@article{Zeiser_Bücking_Götte_Förstner_Hahn_Schmidt_Knorr_2004, title={Dynamics of the phonon-induced electron transfer between semiconductor bulk and surface states}, volume={241}, DOI={<a href=\"https://doi.org/10.1002/pssb.200409060\">10.1002/pssb.200409060</a>}, number={12}, journal={physica status solidi (b)}, publisher={Wiley}, author={Zeiser, Andreas and Bücking, Norbert and Götte, Jörg and Förstner, Jens and Hahn, Patrick and Schmidt, Wolf Gero and Knorr, Andreas}, year={2004}, pages={R60–R62} }","ama":"Zeiser A, Bücking N, Götte J, et al. Dynamics of the phonon-induced electron transfer between semiconductor bulk and surface states. <i>physica status solidi (b)</i>. 2004;241(12):R60-R62. doi:<a href=\"https://doi.org/10.1002/pssb.200409060\">10.1002/pssb.200409060</a>","mla":"Zeiser, Andreas, et al. “Dynamics of the Phonon-Induced Electron Transfer between Semiconductor Bulk and Surface States.” <i>Physica Status Solidi (b)</i>, vol. 241, no. 12, Wiley, 2004, pp. R60–62, doi:<a href=\"https://doi.org/10.1002/pssb.200409060\">10.1002/pssb.200409060</a>."},"date_updated":"2022-12-23T12:38:08Z","publication_status":"published","intvolume":"       241","article_type":"original","year":"2004","title":"Dynamics of the phonon-induced electron transfer between semiconductor bulk and surface states","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"last_name":"Zeiser","first_name":"Andreas","full_name":"Zeiser, Andreas"},{"last_name":"Bücking","first_name":"Norbert","full_name":"Bücking, Norbert"},{"full_name":"Götte, Jörg","last_name":"Götte","first_name":"Jörg"},{"id":"158","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens","full_name":"Förstner, Jens"},{"full_name":"Hahn, Patrick","last_name":"Hahn","first_name":"Patrick"},{"id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero"},{"first_name":"Andreas","last_name":"Knorr","full_name":"Knorr, Andreas"}],"doi":"10.1002/pssb.200409060","language":[{"iso":"eng"}],"abstract":[{"text":"The coupling of surface and bulk states at semiconductor surfaces through electron–phonon interaction is\r\ndiscussed. The governing equations are derived from a microscopic theory in the framework of the density\r\nmatrix theory. To gain a first insight, model wave functions are used to simulate the dynamics of nonequilibrium\r\nelectron distributions in three- and two-dimensional states, coupled by Fröhlich interaction. Typical\r\ntime scales for the coupling are found to be in the order of few hundreds of femtoseconds.","lang":"eng"}],"extern":"1","publication":"physica status solidi (b)","issue":"12","type":"journal_article","file":[{"date_created":"2018-08-29T09:46:32Z","creator":"hclaudia","file_id":"4273","success":1,"content_type":"application/pdf","file_name":"2004 Zeiser et al_Dynamics of the phonon-induced electron transfer between semiconductor bulk and surface states.pdf","access_level":"closed","file_size":200827,"relation":"main_file","date_updated":"2018-08-29T09:46:32Z"}],"date_created":"2018-08-29T09:46:08Z"},{"funded_apc":"1","_id":"13719","language":[{"iso":"eng"}],"page":"245309","volume":69,"doi":"10.1103/physrevb.69.245309","user_id":"16199","author":[{"first_name":"K.","last_name":"Seino","full_name":"Seino, K."},{"full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","id":"468"},{"last_name":"Bechstedt","first_name":"F.","full_name":"Bechstedt, F."}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"status":"public","year":"2004","title":"Organic modification of surface electronic properties: A first-principles study of uracil on Si(001)","intvolume":"        69","date_updated":"2025-12-05T13:13:35Z","publication_status":"published","date_created":"2019-10-09T12:29:58Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","citation":{"mla":"Seino, K., et al. “Organic Modification of Surface Electronic Properties: A First-Principles Study of Uracil on Si(001).” <i>Physical Review B</i>, vol. 69, 2004, p. 245309, doi:<a href=\"https://doi.org/10.1103/physrevb.69.245309\">10.1103/physrevb.69.245309</a>.","bibtex":"@article{Seino_Schmidt_Bechstedt_2004, title={Organic modification of surface electronic properties: A first-principles study of uracil on Si(001)}, volume={69}, DOI={<a href=\"https://doi.org/10.1103/physrevb.69.245309\">10.1103/physrevb.69.245309</a>}, journal={Physical Review B}, author={Seino, K. and Schmidt, Wolf Gero and Bechstedt, F.}, year={2004}, pages={245309} }","ama":"Seino K, Schmidt WG, Bechstedt F. Organic modification of surface electronic properties: A first-principles study of uracil on Si(001). <i>Physical Review B</i>. 2004;69:245309. doi:<a href=\"https://doi.org/10.1103/physrevb.69.245309\">10.1103/physrevb.69.245309</a>","ieee":"K. Seino, W. G. Schmidt, and F. Bechstedt, “Organic modification of surface electronic properties: A first-principles study of uracil on Si(001),” <i>Physical Review B</i>, vol. 69, p. 245309, 2004, doi: <a href=\"https://doi.org/10.1103/physrevb.69.245309\">10.1103/physrevb.69.245309</a>.","apa":"Seino, K., Schmidt, W. G., &#38; Bechstedt, F. (2004). Organic modification of surface electronic properties: A first-principles study of uracil on Si(001). <i>Physical Review B</i>, <i>69</i>, 245309. <a href=\"https://doi.org/10.1103/physrevb.69.245309\">https://doi.org/10.1103/physrevb.69.245309</a>","chicago":"Seino, K., Wolf Gero Schmidt, and F. Bechstedt. “Organic Modification of Surface Electronic Properties: A First-Principles Study of Uracil on Si(001).” <i>Physical Review B</i> 69 (2004): 245309. <a href=\"https://doi.org/10.1103/physrevb.69.245309\">https://doi.org/10.1103/physrevb.69.245309</a>.","short":"K. Seino, W.G. Schmidt, F. Bechstedt, Physical Review B 69 (2004) 245309."},"publication":"Physical Review B"},{"citation":{"ama":"Schmidt WG, Fuchs F, Hermann A, et al. Oxidation- and organic-molecule-induced changes of the Si surface optical anisotropy:ab initiopredictions. <i>Journal of Physics: Condensed Matter</i>. 2004;16:S4323-S4334. doi:<a href=\"https://doi.org/10.1088/0953-8984/16/39/007\">10.1088/0953-8984/16/39/007</a>","bibtex":"@article{Schmidt_Fuchs_Hermann_Seino_Bechstedt_Paßmann_Wahl_Gensch_Hinrichs_Esser_et al._2004, title={Oxidation- and organic-molecule-induced changes of the Si surface optical anisotropy:ab initiopredictions}, volume={16}, DOI={<a href=\"https://doi.org/10.1088/0953-8984/16/39/007\">10.1088/0953-8984/16/39/007</a>}, journal={Journal of Physics: Condensed Matter}, author={Schmidt, Wolf Gero and Fuchs, F and Hermann, A and Seino, K and Bechstedt, F and Paßmann, R and Wahl, M and Gensch, M and Hinrichs, K and Esser, N and et al.}, year={2004}, pages={S4323–S4334} }","mla":"Schmidt, Wolf Gero, et al. “Oxidation- and Organic-Molecule-Induced Changes of the Si Surface Optical Anisotropy:Ab Initiopredictions.” <i>Journal of Physics: Condensed Matter</i>, vol. 16, 2004, pp. S4323–34, doi:<a href=\"https://doi.org/10.1088/0953-8984/16/39/007\">10.1088/0953-8984/16/39/007</a>.","chicago":"Schmidt, Wolf Gero, F Fuchs, A Hermann, K Seino, F Bechstedt, R Paßmann, M Wahl, et al. “Oxidation- and Organic-Molecule-Induced Changes of the Si Surface Optical Anisotropy:Ab Initiopredictions.” <i>Journal of Physics: Condensed Matter</i> 16 (2004): S4323–34. <a href=\"https://doi.org/10.1088/0953-8984/16/39/007\">https://doi.org/10.1088/0953-8984/16/39/007</a>.","short":"W.G. Schmidt, F. Fuchs, A. Hermann, K. Seino, F. Bechstedt, R. Paßmann, M. Wahl, M. Gensch, K. Hinrichs, N. Esser, S. Wang, W. Lu, J. Bernholc, Journal of Physics: Condensed Matter 16 (2004) S4323–S4334.","apa":"Schmidt, W. G., Fuchs, F., Hermann, A., Seino, K., Bechstedt, F., Paßmann, R., Wahl, M., Gensch, M., Hinrichs, K., Esser, N., Wang, S., Lu, W., &#38; Bernholc, J. (2004). Oxidation- and organic-molecule-induced changes of the Si surface optical anisotropy:ab initiopredictions. <i>Journal of Physics: Condensed Matter</i>, <i>16</i>, S4323–S4334. <a href=\"https://doi.org/10.1088/0953-8984/16/39/007\">https://doi.org/10.1088/0953-8984/16/39/007</a>","ieee":"W. G. Schmidt <i>et al.</i>, “Oxidation- and organic-molecule-induced changes of the Si surface optical anisotropy:ab initiopredictions,” <i>Journal of Physics: Condensed Matter</i>, vol. 16, pp. S4323–S4334, 2004, doi: <a href=\"https://doi.org/10.1088/0953-8984/16/39/007\">10.1088/0953-8984/16/39/007</a>."},"publication":"Journal of Physics: Condensed Matter","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","date_created":"2019-10-09T12:12:44Z","intvolume":"        16","date_updated":"2025-12-05T13:15:13Z","publication_status":"published","author":[{"id":"468","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"},{"first_name":"F","last_name":"Fuchs","full_name":"Fuchs, F"},{"last_name":"Hermann","first_name":"A","full_name":"Hermann, A"},{"full_name":"Seino, K","last_name":"Seino","first_name":"K"},{"last_name":"Bechstedt","first_name":"F","full_name":"Bechstedt, F"},{"last_name":"Paßmann","first_name":"R","full_name":"Paßmann, R"},{"full_name":"Wahl, M","last_name":"Wahl","first_name":"M"},{"first_name":"M","last_name":"Gensch","full_name":"Gensch, M"},{"last_name":"Hinrichs","first_name":"K","full_name":"Hinrichs, K"},{"full_name":"Esser, N","last_name":"Esser","first_name":"N"},{"last_name":"Wang","first_name":"S","full_name":"Wang, S"},{"first_name":"W","last_name":"Lu","full_name":"Lu, W"},{"full_name":"Bernholc, J","first_name":"J","last_name":"Bernholc"}],"publication_identifier":{"issn":["0953-8984","1361-648X"]},"title":"Oxidation- and organic-molecule-induced changes of the Si surface optical anisotropy:ab initiopredictions","status":"public","year":"2004","volume":16,"doi":"10.1088/0953-8984/16/39/007","user_id":"16199","language":[{"iso":"eng"}],"_id":"13712","funded_apc":"1","page":"S4323-S4334"},{"page":"302-306","funded_apc":"1","_id":"13716","language":[{"iso":"eng"}],"doi":"10.1016/j.apsusc.2004.05.114","user_id":"16199","volume":234,"title":"Atomic indium nanowires on Si(111): the (4 × 1)–(8 × 2) phase transition studied with reflectance anisotropy spectroscopy","status":"public","year":"2004","author":[{"last_name":"Fleischer","first_name":"K","full_name":"Fleischer, K"},{"full_name":"Chandola, S","last_name":"Chandola","first_name":"S"},{"full_name":"Esser, N","last_name":"Esser","first_name":"N"},{"full_name":"Richter, W","first_name":"W","last_name":"Richter"},{"full_name":"McGilp, J.F","first_name":"J.F","last_name":"McGilp"},{"last_name":"Schmidt","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468"},{"last_name":"Wang","first_name":"S","full_name":"Wang, S"},{"full_name":"Lu, W","last_name":"Lu","first_name":"W"},{"full_name":"Bernholc, J","last_name":"Bernholc","first_name":"J"}],"publication_identifier":{"issn":["0169-4332"]},"date_updated":"2025-12-05T13:14:56Z","publication_status":"published","intvolume":"       234","date_created":"2019-10-09T12:26:23Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"publication":"Applied Surface Science","citation":{"short":"K. Fleischer, S. Chandola, N. Esser, W. Richter, J.F. McGilp, W.G. Schmidt, S. Wang, W. Lu, J. Bernholc, Applied Surface Science 234 (2004) 302–306.","ama":"Fleischer K, Chandola S, Esser N, et al. Atomic indium nanowires on Si(111): the (4 × 1)–(8 × 2) phase transition studied with reflectance anisotropy spectroscopy. <i>Applied Surface Science</i>. 2004;234:302-306. doi:<a href=\"https://doi.org/10.1016/j.apsusc.2004.05.114\">10.1016/j.apsusc.2004.05.114</a>","chicago":"Fleischer, K, S Chandola, N Esser, W Richter, J.F McGilp, Wolf Gero Schmidt, S Wang, W Lu, and J Bernholc. “Atomic Indium Nanowires on Si(111): The (4 × 1)–(8 × 2) Phase Transition Studied with Reflectance Anisotropy Spectroscopy.” <i>Applied Surface Science</i> 234 (2004): 302–6. <a href=\"https://doi.org/10.1016/j.apsusc.2004.05.114\">https://doi.org/10.1016/j.apsusc.2004.05.114</a>.","bibtex":"@article{Fleischer_Chandola_Esser_Richter_McGilp_Schmidt_Wang_Lu_Bernholc_2004, title={Atomic indium nanowires on Si(111): the (4 × 1)–(8 × 2) phase transition studied with reflectance anisotropy spectroscopy}, volume={234}, DOI={<a href=\"https://doi.org/10.1016/j.apsusc.2004.05.114\">10.1016/j.apsusc.2004.05.114</a>}, journal={Applied Surface Science}, author={Fleischer, K and Chandola, S and Esser, N and Richter, W and McGilp, J.F and Schmidt, Wolf Gero and Wang, S and Lu, W and Bernholc, J}, year={2004}, pages={302–306} }","mla":"Fleischer, K., et al. “Atomic Indium Nanowires on Si(111): The (4 × 1)–(8 × 2) Phase Transition Studied with Reflectance Anisotropy Spectroscopy.” <i>Applied Surface Science</i>, vol. 234, 2004, pp. 302–06, doi:<a href=\"https://doi.org/10.1016/j.apsusc.2004.05.114\">10.1016/j.apsusc.2004.05.114</a>.","apa":"Fleischer, K., Chandola, S., Esser, N., Richter, W., McGilp, J. 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Seino, J. Furthmüller, and F. Bechstedt. “Ground- and Excited-State Properties of DNA Base Molecules from Plane-Wave Calculations Using Ultrasoft Pseudopotentials.” <i>Journal of Computational Chemistry</i> 25, no. 1 (2004): 112–22. <a href=\"https://doi.org/10.1002/jcc.10372\">https://doi.org/10.1002/jcc.10372</a>.","short":"M. Preuss, W.G. Schmidt, K. Seino, J. Furthmüller, F. Bechstedt, Journal of Computational Chemistry 25 (2004) 112–122.","ieee":"M. Preuss, W. G. Schmidt, K. Seino, J. Furthmüller, and F. Bechstedt, “Ground- and excited-state properties of DNA base molecules from plane-wave calculations using ultrasoft pseudopotentials,” <i>Journal of Computational Chemistry</i>, vol. 25, no. 1, pp. 112–122, 2004, doi: <a href=\"https://doi.org/10.1002/jcc.10372\">10.1002/jcc.10372</a>.","apa":"Preuss, M., Schmidt, W. G., Seino, K., Furthmüller, J., &#38; Bechstedt, F. (2004). Ground- and excited-state properties of DNA base molecules from plane-wave calculations using ultrasoft pseudopotentials. <i>Journal of Computational Chemistry</i>, <i>25</i>(1), 112–122. <a href=\"https://doi.org/10.1002/jcc.10372\">https://doi.org/10.1002/jcc.10372</a>","bibtex":"@article{Preuss_Schmidt_Seino_Furthmüller_Bechstedt_2004, title={Ground- and excited-state properties of DNA base molecules from plane-wave calculations using ultrasoft pseudopotentials}, volume={25}, DOI={<a href=\"https://doi.org/10.1002/jcc.10372\">10.1002/jcc.10372</a>}, number={1}, journal={Journal of Computational Chemistry}, author={Preuss, M. and Schmidt, Wolf Gero and Seino, K. and Furthmüller, J. and Bechstedt, F.}, year={2004}, pages={112–122} }","ama":"Preuss M, Schmidt WG, Seino K, Furthmüller J, Bechstedt F. Ground- and excited-state properties of DNA base molecules from plane-wave calculations using ultrasoft pseudopotentials. <i>Journal of Computational Chemistry</i>. 2004;25(1):112-122. doi:<a href=\"https://doi.org/10.1002/jcc.10372\">10.1002/jcc.10372</a>","mla":"Preuss, M., et al. “Ground- and Excited-State Properties of DNA Base Molecules from Plane-Wave Calculations Using Ultrasoft Pseudopotentials.” <i>Journal of Computational Chemistry</i>, vol. 25, no. 1, 2004, pp. 112–22, doi:<a href=\"https://doi.org/10.1002/jcc.10372\">10.1002/jcc.10372</a>."},"publication":"Journal of Computational Chemistry","issue":"1","volume":25,"user_id":"16199","doi":"10.1002/jcc.10372","_id":"13722","language":[{"iso":"eng"}],"page":"112-122","intvolume":"        25","publication_status":"published","date_updated":"2025-12-16T07:25:40Z","publication_identifier":{"issn":["0192-8651","1096-987X"]},"author":[{"last_name":"Preuss","first_name":"M.","full_name":"Preuss, M."},{"id":"468","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero"},{"full_name":"Seino, K.","first_name":"K.","last_name":"Seino"},{"full_name":"Furthmüller, J.","first_name":"J.","last_name":"Furthmüller"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"status":"public","title":"Ground- and excited-state properties of DNA base molecules from plane-wave calculations using ultrasoft pseudopotentials","year":"2004"},{"citation":{"ieee":"W. G. Schmidt <i>et al.</i>, “Calculation of surface optical properties: from qualitative understanding to quantitative predictions,” <i>Thin Solid Films</i>, vol. 455–456, pp. 764–771, 2004, doi: <a href=\"https://doi.org/10.1016/j.tsf.2003.11.263\">10.1016/j.tsf.2003.11.263</a>.","mla":"Schmidt, Wolf Gero, et al. “Calculation of Surface Optical Properties: From Qualitative Understanding to Quantitative Predictions.” <i>Thin Solid Films</i>, vol. 455–456, 2004, pp. 764–71, doi:<a href=\"https://doi.org/10.1016/j.tsf.2003.11.263\">10.1016/j.tsf.2003.11.263</a>.","apa":"Schmidt, W. G., Seino, K., Hahn, P. H., Bechstedt, F., Lu, W., Wang, S., &#38; Bernholc, J. (2004). Calculation of surface optical properties: from qualitative understanding to quantitative predictions. <i>Thin Solid Films</i>, <i>455–456</i>, 764–771. <a href=\"https://doi.org/10.1016/j.tsf.2003.11.263\">https://doi.org/10.1016/j.tsf.2003.11.263</a>","bibtex":"@article{Schmidt_Seino_Hahn_Bechstedt_Lu_Wang_Bernholc_2004, title={Calculation of surface optical properties: from qualitative understanding to quantitative predictions}, volume={455–456}, DOI={<a href=\"https://doi.org/10.1016/j.tsf.2003.11.263\">10.1016/j.tsf.2003.11.263</a>}, journal={Thin Solid Films}, author={Schmidt, Wolf Gero and Seino, K. and Hahn, P.H. and Bechstedt, F. and Lu, W. and Wang, S. and Bernholc, J.}, year={2004}, pages={764–771} }","ama":"Schmidt WG, Seino K, Hahn PH, et al. Calculation of surface optical properties: from qualitative understanding to quantitative predictions. <i>Thin Solid Films</i>. 2004;455-456:764-771. doi:<a href=\"https://doi.org/10.1016/j.tsf.2003.11.263\">10.1016/j.tsf.2003.11.263</a>","short":"W.G. Schmidt, K. Seino, P.H. Hahn, F. Bechstedt, W. Lu, S. Wang, J. Bernholc, Thin Solid Films 455–456 (2004) 764–771.","chicago":"Schmidt, Wolf Gero, K. Seino, P.H. Hahn, F. Bechstedt, W. Lu, S. Wang, and J. Bernholc. “Calculation of Surface Optical Properties: From Qualitative Understanding to Quantitative Predictions.” <i>Thin Solid Films</i> 455–456 (2004): 764–71. <a href=\"https://doi.org/10.1016/j.tsf.2003.11.263\">https://doi.org/10.1016/j.tsf.2003.11.263</a>."},"publication":"Thin Solid Films","date_created":"2019-10-09T12:32:37Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","publication_identifier":{"issn":["0040-6090"]},"author":[{"full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468"},{"full_name":"Seino, K.","first_name":"K.","last_name":"Seino"},{"first_name":"P.H.","last_name":"Hahn","full_name":"Hahn, P.H."},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."},{"full_name":"Lu, W.","first_name":"W.","last_name":"Lu"},{"full_name":"Wang, S.","last_name":"Wang","first_name":"S."},{"last_name":"Bernholc","first_name":"J.","full_name":"Bernholc, J."}],"status":"public","title":"Calculation of surface optical properties: from qualitative understanding to quantitative predictions","year":"2004","publication_status":"published","date_updated":"2025-12-16T07:26:18Z","_id":"13720","language":[{"iso":"eng"}],"page":"764-771","volume":"455-456","user_id":"16199","doi":"10.1016/j.tsf.2003.11.263"},{"publication_status":"published","date_updated":"2025-12-16T07:25:59Z","intvolume":"       548","year":"2004","title":"Reflectance anisotropy of uracil covered Si(001) surfaces: Ab initio predictions","status":"public","publication_identifier":{"issn":["0039-6028"]},"author":[{"full_name":"Seino, K.","last_name":"Seino","first_name":"K."},{"id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076"}],"user_id":"16199","doi":"10.1016/j.susc.2003.11.002","volume":548,"page":"183-186","language":[{"iso":"eng"}],"_id":"13721","funded_apc":"1","publication":"Surface Science","citation":{"ieee":"K. Seino and W. G. Schmidt, “Reflectance anisotropy of uracil covered Si(001) surfaces: Ab initio predictions,” <i>Surface Science</i>, vol. 548, pp. 183–186, 2004, doi: <a href=\"https://doi.org/10.1016/j.susc.2003.11.002\">10.1016/j.susc.2003.11.002</a>.","apa":"Seino, K., &#38; Schmidt, W. G. (2004). Reflectance anisotropy of uracil covered Si(001) surfaces: Ab initio predictions. <i>Surface Science</i>, <i>548</i>, 183–186. <a href=\"https://doi.org/10.1016/j.susc.2003.11.002\">https://doi.org/10.1016/j.susc.2003.11.002</a>","short":"K. Seino, W.G. Schmidt, Surface Science 548 (2004) 183–186.","chicago":"Seino, K., and Wolf Gero Schmidt. “Reflectance Anisotropy of Uracil Covered Si(001) Surfaces: Ab Initio Predictions.” <i>Surface Science</i> 548 (2004): 183–86. <a href=\"https://doi.org/10.1016/j.susc.2003.11.002\">https://doi.org/10.1016/j.susc.2003.11.002</a>.","mla":"Seino, K., and Wolf Gero Schmidt. “Reflectance Anisotropy of Uracil Covered Si(001) Surfaces: Ab Initio Predictions.” <i>Surface Science</i>, vol. 548, 2004, pp. 183–86, doi:<a href=\"https://doi.org/10.1016/j.susc.2003.11.002\">10.1016/j.susc.2003.11.002</a>.","bibtex":"@article{Seino_Schmidt_2004, title={Reflectance anisotropy of uracil covered Si(001) surfaces: Ab initio predictions}, volume={548}, DOI={<a href=\"https://doi.org/10.1016/j.susc.2003.11.002\">10.1016/j.susc.2003.11.002</a>}, journal={Surface Science}, author={Seino, K. and Schmidt, Wolf Gero}, year={2004}, pages={183–186} }","ama":"Seino K, Schmidt WG. Reflectance anisotropy of uracil covered Si(001) surfaces: Ab initio predictions. <i>Surface Science</i>. 2004;548:183-186. doi:<a href=\"https://doi.org/10.1016/j.susc.2003.11.002\">10.1016/j.susc.2003.11.002</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"date_created":"2019-10-09T12:33:35Z"},{"status":"public","title":"EfficientO(N2)method to solve the Bethe-Salpeter equation","year":"2003","author":[{"full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt","id":"468"},{"full_name":"Glutsch, S.","first_name":"S.","last_name":"Glutsch"},{"first_name":"P. H.","last_name":"Hahn","full_name":"Hahn, P. H."},{"full_name":"Bechstedt, F.","first_name":"F.","last_name":"Bechstedt"}],"publication_identifier":{"issn":["0163-1829","1095-3795"]},"publication_status":"published","date_updated":"2025-12-16T07:21:20Z","intvolume":"        67","page":"085307","language":[{"iso":"eng"}],"_id":"13734","user_id":"16199","doi":"10.1103/physrevb.67.085307","volume":67,"publication":"Physical Review B","citation":{"ieee":"W. G. Schmidt, S. Glutsch, P. H. Hahn, and F. Bechstedt, “EfficientO(N2)method to solve the Bethe-Salpeter equation,” <i>Physical Review B</i>, vol. 67, p. 085307, 2003, doi: <a href=\"https://doi.org/10.1103/physrevb.67.085307\">10.1103/physrevb.67.085307</a>.","apa":"Schmidt, W. G., Glutsch, S., Hahn, P. H., &#38; Bechstedt, F. (2003). EfficientO(N2)method to solve the Bethe-Salpeter equation. <i>Physical Review B</i>, <i>67</i>, 085307. <a href=\"https://doi.org/10.1103/physrevb.67.085307\">https://doi.org/10.1103/physrevb.67.085307</a>","short":"W.G. Schmidt, S. Glutsch, P.H. Hahn, F. Bechstedt, Physical Review B 67 (2003) 085307.","chicago":"Schmidt, Wolf Gero, S. Glutsch, P. H. Hahn, and F. Bechstedt. “EfficientO(N2)Method to Solve the Bethe-Salpeter Equation.” <i>Physical Review B</i> 67 (2003): 085307. <a href=\"https://doi.org/10.1103/physrevb.67.085307\">https://doi.org/10.1103/physrevb.67.085307</a>.","mla":"Schmidt, Wolf Gero, et al. “EfficientO(N2)Method to Solve the Bethe-Salpeter Equation.” <i>Physical Review B</i>, vol. 67, 2003, p. 085307, doi:<a href=\"https://doi.org/10.1103/physrevb.67.085307\">10.1103/physrevb.67.085307</a>.","bibtex":"@article{Schmidt_Glutsch_Hahn_Bechstedt_2003, title={EfficientO(N2)method to solve the Bethe-Salpeter equation}, volume={67}, DOI={<a href=\"https://doi.org/10.1103/physrevb.67.085307\">10.1103/physrevb.67.085307</a>}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Glutsch, S. and Hahn, P. H. and Bechstedt, F.}, year={2003}, pages={085307} }","ama":"Schmidt WG, Glutsch S, Hahn PH, Bechstedt F. EfficientO(N2)method to solve the Bethe-Salpeter equation. <i>Physical Review B</i>. 2003;67:085307. doi:<a href=\"https://doi.org/10.1103/physrevb.67.085307\">10.1103/physrevb.67.085307</a>"},"date_created":"2019-10-09T13:11:33Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}]},{"author":[{"full_name":"Seino, K.","last_name":"Seino","first_name":"K."},{"last_name":"Schmidt","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468"},{"last_name":"Furthmüller","first_name":"J.","full_name":"Furthmüller, J."},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."}],"publication_identifier":{"issn":["0163-1829","1095-3795"]},"title":"Chemisorption of pyrrole and polypyrrole on Si(001)","year":"2003","status":"public","intvolume":"        66","publication_status":"published","date_updated":"2025-12-16T07:21:01Z","language":[{"iso":"eng"}],"_id":"13735","page":"235323","volume":66,"user_id":"16199","doi":"10.1103/physrevb.66.235323","citation":{"ieee":"K. Seino, W. G. Schmidt, J. Furthmüller, and F. Bechstedt, “Chemisorption of pyrrole and polypyrrole on Si(001),” <i>Physical Review B</i>, vol. 66, p. 235323, 2003, doi: <a href=\"https://doi.org/10.1103/physrevb.66.235323\">10.1103/physrevb.66.235323</a>.","apa":"Seino, K., Schmidt, W. G., Furthmüller, J., &#38; Bechstedt, F. (2003). Chemisorption of pyrrole and polypyrrole on Si(001). <i>Physical Review B</i>, <i>66</i>, 235323. <a href=\"https://doi.org/10.1103/physrevb.66.235323\">https://doi.org/10.1103/physrevb.66.235323</a>","short":"K. Seino, W.G. Schmidt, J. Furthmüller, F. Bechstedt, Physical Review B 66 (2003) 235323.","chicago":"Seino, K., Wolf Gero Schmidt, J. Furthmüller, and F. Bechstedt. “Chemisorption of Pyrrole and Polypyrrole on Si(001).” <i>Physical Review B</i> 66 (2003): 235323. <a href=\"https://doi.org/10.1103/physrevb.66.235323\">https://doi.org/10.1103/physrevb.66.235323</a>.","mla":"Seino, K., et al. “Chemisorption of Pyrrole and Polypyrrole on Si(001).” <i>Physical Review B</i>, vol. 66, 2003, p. 235323, doi:<a href=\"https://doi.org/10.1103/physrevb.66.235323\">10.1103/physrevb.66.235323</a>.","bibtex":"@article{Seino_Schmidt_Furthmüller_Bechstedt_2003, title={Chemisorption of pyrrole and polypyrrole on Si(001)}, volume={66}, DOI={<a href=\"https://doi.org/10.1103/physrevb.66.235323\">10.1103/physrevb.66.235323</a>}, journal={Physical Review B}, author={Seino, K. and Schmidt, Wolf Gero and Furthmüller, J. and Bechstedt, F.}, year={2003}, pages={235323} }","ama":"Seino K, Schmidt WG, Furthmüller J, Bechstedt F. Chemisorption of pyrrole and polypyrrole on Si(001). <i>Physical Review B</i>. 2003;66:235323. doi:<a href=\"https://doi.org/10.1103/physrevb.66.235323\">10.1103/physrevb.66.235323</a>"},"publication":"Physical Review B","date_created":"2019-10-09T13:12:44Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article"},{"citation":{"bibtex":"@article{Schmidt_Seino_2003, title={Pyrrole (C4H4NH) and Polypyrrole Functionalized  Silicon Surfaces Calculated from First Principles}, volume={10}, DOI={<a href=\"https://doi.org/10.1142/s0218625x03004901\">10.1142/s0218625x03004901</a>}, number={2–3}, journal={Surface Review and Letters}, author={Schmidt, Wolf Gero and Seino, K.}, year={2003}, pages={221–226} }","ama":"Schmidt WG, Seino K. Pyrrole (C4H4NH) and Polypyrrole Functionalized  Silicon Surfaces Calculated from First Principles. <i>Surface Review and Letters</i>. 2003;10(2-3):221-226. doi:<a href=\"https://doi.org/10.1142/s0218625x03004901\">10.1142/s0218625x03004901</a>","mla":"Schmidt, Wolf Gero, and K. Seino. “Pyrrole (C4H4NH) and Polypyrrole Functionalized  Silicon Surfaces Calculated from First Principles.” <i>Surface Review and Letters</i>, vol. 10, no. 2–3, 2003, pp. 221–26, doi:<a href=\"https://doi.org/10.1142/s0218625x03004901\">10.1142/s0218625x03004901</a>.","chicago":"Schmidt, Wolf Gero, and K. Seino. “Pyrrole (C4H4NH) and Polypyrrole Functionalized  Silicon Surfaces Calculated from First Principles.” <i>Surface Review and Letters</i> 10, no. 2–3 (2003): 221–26. <a href=\"https://doi.org/10.1142/s0218625x03004901\">https://doi.org/10.1142/s0218625x03004901</a>.","short":"W.G. Schmidt, K. Seino, Surface Review and Letters 10 (2003) 221–226.","ieee":"W. G. Schmidt and K. Seino, “Pyrrole (C4H4NH) and Polypyrrole Functionalized  Silicon Surfaces Calculated from First Principles,” <i>Surface Review and Letters</i>, vol. 10, no. 2–3, pp. 221–226, 2003, doi: <a href=\"https://doi.org/10.1142/s0218625x03004901\">10.1142/s0218625x03004901</a>.","apa":"Schmidt, W. G., &#38; Seino, K. (2003). Pyrrole (C4H4NH) and Polypyrrole Functionalized  Silicon Surfaces Calculated from First Principles. <i>Surface Review and Letters</i>, <i>10</i>(2–3), 221–226. <a href=\"https://doi.org/10.1142/s0218625x03004901\">https://doi.org/10.1142/s0218625x03004901</a>"},"status":"public","volume":10,"user_id":"16199","_id":"13729","page":"221-226","abstract":[{"lang":"eng","text":"<jats:p> The functionalization of the Si(001) surface by pyrrole and polypyrrole is investigated by means of first-principles pseudopotential calculations. We find dissociative reactions, leading to the partial fragmentation of the molecule, to be energetically most favored for pyrrole adsorption. The lowest-energy configuration for monolayer coverage is characterized by pyrrole rings bonded to the surface via Si–N linkage. In coexistence with adsorption geometries where both N and C are bonded to the surface, this structure accounts very well for the available experimental data. Chemisorption of pyrrole is found to effectively passivate the Si(001) surface, irrespective of the details of the adsorption geometry. The formation of well-ordered polypyrrole structures on Si(001) may require chemical modifications of the polypyrrole chains in order to account for the lattice mismatch. </jats:p>"}],"issue":"2-3","publication":"Surface Review and Letters","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","date_created":"2019-10-09T12:52:10Z","intvolume":"        10","publication_status":"published","date_updated":"2025-12-16T07:23:25Z","publication_identifier":{"issn":["0218-625X","1793-6667"]},"author":[{"full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","id":"468"},{"last_name":"Seino","first_name":"K.","full_name":"Seino, K."}],"title":"Pyrrole (C4H4NH) and Polypyrrole Functionalized  Silicon Surfaces Calculated from First Principles","year":"2003","doi":"10.1142/s0218625x03004901","language":[{"iso":"eng"}]},{"citation":{"ama":"Hahn PH, Schmidt WG. Surface Ordering of P-rich InP(001): Hydrogen Stabilization vs Electron Correlation. <i>Surface Review and Letters</i>. 2003;10(2-3):163-167. doi:<a href=\"https://doi.org/10.1142/s0218625x03004913\">10.1142/s0218625x03004913</a>","bibtex":"@article{Hahn_Schmidt_2003, title={Surface Ordering of P-rich InP(001): Hydrogen Stabilization vs Electron Correlation}, volume={10}, DOI={<a href=\"https://doi.org/10.1142/s0218625x03004913\">10.1142/s0218625x03004913</a>}, number={2–3}, journal={Surface Review and Letters}, author={Hahn, P. H. and Schmidt, Wolf Gero}, year={2003}, pages={163–167} }","mla":"Hahn, P. H., and Wolf Gero Schmidt. “Surface Ordering of P-Rich InP(001): Hydrogen Stabilization vs Electron Correlation.” <i>Surface Review and Letters</i>, vol. 10, no. 2–3, 2003, pp. 163–67, doi:<a href=\"https://doi.org/10.1142/s0218625x03004913\">10.1142/s0218625x03004913</a>.","chicago":"Hahn, P. H., and Wolf Gero Schmidt. “Surface Ordering of P-Rich InP(001): Hydrogen Stabilization vs Electron Correlation.” <i>Surface Review and Letters</i> 10, no. 2–3 (2003): 163–67. <a href=\"https://doi.org/10.1142/s0218625x03004913\">https://doi.org/10.1142/s0218625x03004913</a>.","short":"P.H. Hahn, W.G. Schmidt, Surface Review and Letters 10 (2003) 163–167.","apa":"Hahn, P. H., &#38; Schmidt, W. G. (2003). Surface Ordering of P-rich InP(001): Hydrogen Stabilization vs Electron Correlation. <i>Surface Review and Letters</i>, <i>10</i>(2–3), 163–167. <a href=\"https://doi.org/10.1142/s0218625x03004913\">https://doi.org/10.1142/s0218625x03004913</a>","ieee":"P. H. Hahn and W. G. Schmidt, “Surface Ordering of P-rich InP(001): Hydrogen Stabilization vs Electron Correlation,” <i>Surface Review and Letters</i>, vol. 10, no. 2–3, pp. 163–167, 2003, doi: <a href=\"https://doi.org/10.1142/s0218625x03004913\">10.1142/s0218625x03004913</a>."},"status":"public","user_id":"16199","volume":10,"page":"163-167","_id":"13730","abstract":[{"text":"<jats:p> The influence of hydrogen on the reconstruction of InP(001) surfaces is studied by first-principles calculations. One-monolayer phosphorus forming oppositely buckled dimers with one hydrogen adsorbed per dimer is energetically favored for a wide range of surface preparation conditions. The electronic structure and STM image calculated for this adsorbate geometry agree well with the experimental findings obtained after annealing of MOVPE-grown InP samples. The Si(001)-like surface ordering as well as the surface band gap of more than 1 eV, supposedly arising from electron correlation effects [Li et al., Phys. Rev. Lett.82, 1879 (1999)], are naturally explained by the hydrogen-stabilized surface structure favored by the total-energy calculations. </jats:p>","lang":"eng"}],"publication":"Surface Review and Letters","issue":"2-3","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"date_created":"2019-10-09T12:57:01Z","date_updated":"2025-12-16T07:23:08Z","publication_status":"published","intvolume":"        10","year":"2003","title":"Surface Ordering of P-rich InP(001): Hydrogen Stabilization vs Electron Correlation","author":[{"full_name":"Hahn, P. H.","first_name":"P. H.","last_name":"Hahn"},{"id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076"}],"publication_identifier":{"issn":["0218-625X","1793-6667"]},"doi":"10.1142/s0218625x03004913","language":[{"iso":"eng"}]}]