---
_id: '4551'
abstract:
- lang: eng
  text: An intentional positioning of optically active quantum dots using site-selective
    growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB)
    implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated.
    A square array of periodic holes on GaAs substrate was fabricated with FIB of
    30 keV ions followed by an in situ annealing step. Subsequently, the patterned
    holes were overgrown with an optimized amount of InAs in order to achieve site-selective
    growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity
    of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter,
    carrier injection and subsequent radiative recombination from the positioned InAs/GaAs
    self-assembled QDs was investigated by embedding the QDs in the intrinsic part
    of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77
    K show interband transitions up to the fifth excited state from the QDs.
article_type: original
author:
- first_name: Minisha
  full_name: Mehta, Minisha
  last_name: Mehta
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Alexander
  full_name: Melnikov, Alexander
  last_name: Melnikov
- first_name: Andreas D.
  full_name: Wieck, Andreas D.
  last_name: Wieck
- first_name: Steffen
  full_name: Michaelis de Vasconcellos, Steffen
  last_name: Michaelis de Vasconcellos
- first_name: Tim
  full_name: Baumgarten, Tim
  last_name: Baumgarten
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
citation:
  ama: 'Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled
    InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E:
    Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2749-2752. doi:<a
    href="https://doi.org/10.1016/j.physe.2009.12.053">10.1016/j.physe.2009.12.053</a>'
  apa: 'Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos,
    S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled
    InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E:
    Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2749–2752. <a href="https://doi.org/10.1016/j.physe.2009.12.053">https://doi.org/10.1016/j.physe.2009.12.053</a>'
  bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010,
    title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
    p–i–n junction diode}, volume={42}, DOI={<a href="https://doi.org/10.1016/j.physe.2009.12.053">10.1016/j.physe.2009.12.053</a>},
    number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
    publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov,
    Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten,
    Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }'
  chicago: 'Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen
    Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally
    Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction
    Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10
    (2010): 2749–52. <a href="https://doi.org/10.1016/j.physe.2009.12.053">https://doi.org/10.1016/j.physe.2009.12.053</a>.'
  ieee: 'M. Mehta <i>et al.</i>, “Intentionally positioned self-assembled InAs quantum
    dots in an electroluminescent p–i–n junction diode,” <i>Physica E: Low-dimensional
    Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2749–2752, 2010.'
  mla: 'Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum
    Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional
    Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52,
    doi:<a href="https://doi.org/10.1016/j.physe.2009.12.053">10.1016/j.physe.2009.12.053</a>.'
  short: 'M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos,
    T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures
    42 (2010) 2749–2752.'
date_created: 2018-09-20T12:42:40Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1016/j.physe.2009.12.053
intvolume: '        42'
issue: '10'
keyword:
- Molecular beam epitaxy
- Focused ion beam
- Self-assembled quantum dot
- Electroluminescence
language:
- iso: eng
page: 2749-2752
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
  p–i–n junction diode
type: journal_article
user_id: '20798'
volume: 42
year: '2010'
...
---
_id: '4552'
abstract:
- lang: eng
  text: Here we report on investigations on CdSe quantum dots incorporated in ZnSe
    based Schottky photodiodes with near-field shadow masks. Photoluminescence and
    photocurrent of individual quantum dots were studied as a function of the applied
    bias voltage. The exciton energy of the quantum dot ground state transition was
    shifted to the excitation energy by using the Stark effect tuning via an external
    bias voltage. Under the condition of resonance with the laser excitation energy
    we observed a resonant photocurrent signal due to the tunnelling of carriers out
    of the quantum dots at electric fields above 500 kV/cm.
article_type: original
author:
- first_name: M.
  full_name: Panfilova, M.
  last_name: Panfilova
- first_name: S.
  full_name: Michaelis de Vasconcellos, S.
  last_name: Michaelis de Vasconcellos
- first_name: A.
  full_name: Pawlis, A.
  last_name: Pawlis
- first_name: K.
  full_name: Lischka, K.
  last_name: Lischka
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
citation:
  ama: 'Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A.
    Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica
    E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2521-2523. doi:<a
    href="https://doi.org/10.1016/j.physe.2010.01.013">10.1016/j.physe.2010.01.013</a>'
  apa: 'Panfilova, M., Michaelis de Vasconcellos, S., Pawlis, A., Lischka, K., &#38;
    Zrenner, A. (2010). Resonant photocurrent-spectroscopy of individual CdSe quantum
    dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10),
    2521–2523. <a href="https://doi.org/10.1016/j.physe.2010.01.013">https://doi.org/10.1016/j.physe.2010.01.013</a>'
  bibtex: '@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010,
    title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42},
    DOI={<a href="https://doi.org/10.1016/j.physe.2010.01.013">10.1016/j.physe.2010.01.013</a>},
    number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
    publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos,
    S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523}
    }'
  chicago: 'Panfilova, M., S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and
    Artur Zrenner. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum
    Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10
    (2010): 2521–23. <a href="https://doi.org/10.1016/j.physe.2010.01.013">https://doi.org/10.1016/j.physe.2010.01.013</a>.'
  ieee: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A.
    Zrenner, “Resonant photocurrent-spectroscopy of individual CdSe quantum dots,”
    <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10,
    pp. 2521–2523, 2010.'
  mla: 'Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe
    Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol.
    42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:<a href="https://doi.org/10.1016/j.physe.2010.01.013">10.1016/j.physe.2010.01.013</a>.'
  short: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner,
    Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.'
date_created: 2018-09-20T12:45:46Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.physe.2010.01.013
intvolume: '        42'
issue: '10'
keyword:
- CdSe/ZnSe quantum dots
- Photodiode
- Quantum confined Stark Effect
- Photocurrent
- II–VI Semiconductors
language:
- iso: eng
page: 2521-2523
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Resonant photocurrent-spectroscopy of individual CdSe quantum dots
type: journal_article
user_id: '49428'
volume: 42
year: '2010'
...
---
_id: '6619'
abstract:
- lang: ger
  text: Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer
    Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden,
    wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische
    Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung
    der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente
    chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung
    einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase
    ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor
    vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung
    der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und
    der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell
    ermittelte Konzentrationsverläufe.
article_type: original
author:
- first_name: H.-J.
  full_name: Warnecke, H.-J.
  last_name: Warnecke
- first_name: D.
  full_name: Bothe, D.
  last_name: Bothe
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: K.-P.
  full_name: Hüsch, K.-P.
  last_name: Hüsch
citation:
  ama: Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung
    lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.
    <i>Chemie Ingenieur Technik</i>. 2010;82(3):251-258. doi:<a href="https://doi.org/10.1002/cite.200900169">10.1002/cite.200900169</a>
  apa: Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., &#38; Hüsch, K.-P. (2010).
    Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase
    mittels Flachbettmikroreaktor*. <i>Chemie Ingenieur Technik</i>, <i>82</i>(3),
    251–258. <a href="https://doi.org/10.1002/cite.200900169">https://doi.org/10.1002/cite.200900169</a>
  bibtex: '@article{Warnecke_Bothe_Zrenner_Berth_Hüsch_2010, title={Modellbasierte
    Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels
    Flachbettmikroreaktor*}, volume={82}, DOI={<a href="https://doi.org/10.1002/cite.200900169">10.1002/cite.200900169</a>},
    number={3}, journal={Chemie Ingenieur Technik}, publisher={Wiley}, author={Warnecke,
    H.-J. and Bothe, D. and Zrenner, Artur and Berth, Gerhard and Hüsch, K.-P.}, year={2010},
    pages={251–258} }'
  chicago: 'Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch.
    “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase
    mittels Flachbettmikroreaktor*.” <i>Chemie Ingenieur Technik</i> 82, no. 3 (2010):
    251–58. <a href="https://doi.org/10.1002/cite.200900169">https://doi.org/10.1002/cite.200900169</a>.'
  ieee: H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte
    Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels
    Flachbettmikroreaktor*,” <i>Chemie Ingenieur Technik</i>, vol. 82, no. 3, pp.
    251–258, 2010.
  mla: Warnecke, H. J., et al. “Modellbasierte Bestimmung lokal gültiger Kinetiken
    chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” <i>Chemie
    Ingenieur Technik</i>, vol. 82, no. 3, Wiley, 2010, pp. 251–58, doi:<a href="https://doi.org/10.1002/cite.200900169">10.1002/cite.200900169</a>.
  short: H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur
    Technik 82 (2010) 251–258.
date_created: 2019-01-10T10:13:09Z
date_updated: 2022-01-06T07:03:13Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/cite.200900169
intvolume: '        82'
issue: '3'
language:
- iso: ger
page: 251-258
publication: Chemie Ingenieur Technik
publication_identifier:
  issn:
  - 0009-286X
  - 1522-2640
publication_status: published
publisher: Wiley
status: public
title: Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in
  Flüssigphase mittels Flachbettmikroreaktor*
type: journal_article
user_id: '49428'
volume: 82
year: '2010'
...
---
_id: '4547'
abstract:
- lang: eng
  text: The coherent state manipulation of single quantum systems is a fundamental
    requirement for the implementation of quantum information processors. Exciton
    qubits are of particular interest for coherent optoelectronic applications, in
    particular due to their excellent coupling to photons. Until now, coherent manipulations
    of exciton qubits in semiconductor quantum dots have been performed predominantly
    by pulsed laser fields. Coherent control of the population of excitonic states
    with a single laser pulse, observed by Rabi oscillations, has been demonstrated
    by several groups using different techniques1,2,3. By using two laser pulses,
    more general state control can be achieved4, and coupling of two excitons has
    been reported5,6. Here, we present a conceptually new approach for implementing
    the coherent control of an exciton two-level system (qubit) by means of a time-dependent
    electric interaction. The new scheme makes use of an optical clock signal and
    a synchronous electric gate signal, which controls the coherent manipulation.
article_type: original
author:
- first_name: S.
  full_name: Michaelis de Vasconcellos, S.
  last_name: Michaelis de Vasconcellos
- first_name: S.
  full_name: Gordon, S.
  last_name: Gordon
- first_name: M.
  full_name: Bichler, M.
  last_name: Bichler
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
citation:
  ama: Michaelis de Vasconcellos S, Gordon S, Bichler M, Meier T, Zrenner A. Coherent
    control of a single exciton qubit by optoelectronic manipulation. <i>Nature Photonics</i>.
    2010;4(8):545-548. doi:<a href="https://doi.org/10.1038/nphoton.2010.124">10.1038/nphoton.2010.124</a>
  apa: Michaelis de Vasconcellos, S., Gordon, S., Bichler, M., Meier, T., &#38; Zrenner,
    A. (2010). Coherent control of a single exciton qubit by optoelectronic manipulation.
    <i>Nature Photonics</i>, <i>4</i>(8), 545–548. <a href="https://doi.org/10.1038/nphoton.2010.124">https://doi.org/10.1038/nphoton.2010.124</a>
  bibtex: '@article{Michaelis de Vasconcellos_Gordon_Bichler_Meier_Zrenner_2010, title={Coherent
    control of a single exciton qubit by optoelectronic manipulation}, volume={4},
    DOI={<a href="https://doi.org/10.1038/nphoton.2010.124">10.1038/nphoton.2010.124</a>},
    number={8}, journal={Nature Photonics}, publisher={Springer Nature}, author={Michaelis
    de Vasconcellos, S. and Gordon, S. and Bichler, M. and Meier, Torsten and Zrenner,
    Artur}, year={2010}, pages={545–548} }'
  chicago: 'Michaelis de Vasconcellos, S., S. Gordon, M. Bichler, Torsten Meier, and
    Artur Zrenner. “Coherent Control of a Single Exciton Qubit by Optoelectronic Manipulation.”
    <i>Nature Photonics</i> 4, no. 8 (2010): 545–48. <a href="https://doi.org/10.1038/nphoton.2010.124">https://doi.org/10.1038/nphoton.2010.124</a>.'
  ieee: 'S. Michaelis de Vasconcellos, S. Gordon, M. Bichler, T. Meier, and A. Zrenner,
    “Coherent control of a single exciton qubit by optoelectronic manipulation,” <i>Nature
    Photonics</i>, vol. 4, no. 8, pp. 545–548, 2010, doi: <a href="https://doi.org/10.1038/nphoton.2010.124">10.1038/nphoton.2010.124</a>.'
  mla: Michaelis de Vasconcellos, S., et al. “Coherent Control of a Single Exciton
    Qubit by Optoelectronic Manipulation.” <i>Nature Photonics</i>, vol. 4, no. 8,
    Springer Nature, 2010, pp. 545–48, doi:<a href="https://doi.org/10.1038/nphoton.2010.124">10.1038/nphoton.2010.124</a>.
  short: S. Michaelis de Vasconcellos, S. Gordon, M. Bichler, T. Meier, A. Zrenner,
    Nature Photonics 4 (2010) 545–548.
date_created: 2018-09-20T12:19:52Z
date_updated: 2025-12-16T11:22:52Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '170'
- _id: '293'
- _id: '35'
doi: 10.1038/nphoton.2010.124
intvolume: '         4'
issue: '8'
language:
- iso: eng
page: 545-548
publication: Nature Photonics
publication_identifier:
  issn:
  - 1749-4885
  - 1749-4893
publication_status: published
publisher: Springer Nature
status: public
title: Coherent control of a single exciton qubit by optoelectronic manipulation
type: journal_article
user_id: '16199'
volume: 4
year: '2010'
...
---
_id: '4553'
abstract:
- lang: eng
  text: We present results on ferroelectric micro-domains obtained by confocal second
    harmonic microscopy. The high potential of this technique is demonstrated by imaging
    periodic ferroelectric domain structures in the surface of planar X-cut lithium
    niobate (LN) and in the body of ridges fabricated by plasma etching on X-cut LN
    as well. In both cases the measured second harmonic signal reveals a strong contrast
    between inverted and non-inverted domain sections. This enabled a depth-resolved
    non-destructive tomography of micro-domains in ridge structures in all three dimensions.
article_type: original
author:
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: Volker
  full_name: Wiedemeier, Volker
  last_name: Wiedemeier
- first_name: Klaus-Peter
  full_name: Hüsch, Klaus-Peter
  last_name: Hüsch
- first_name: Li
  full_name: Gui, Li
  last_name: Gui
- first_name: Hui
  full_name: Hu, Hui
  last_name: Hu
- first_name: Wolfgang
  full_name: Sohler, Wolfgang
  last_name: Sohler
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
citation:
  ama: Berth G, Wiedemeier V, Hüsch K-P, et al. Imaging of Ferroelectric Micro-Domains
    in X-Cut Lithium Niobate by Confocal Second Harmonic Microscopy. <i>Ferroelectrics</i>.
    2009;389(1):132-141. doi:<a href="https://doi.org/10.1080/00150190902993267">10.1080/00150190902993267</a>
  apa: Berth, G., Wiedemeier, V., Hüsch, K.-P., Gui, L., Hu, H., Sohler, W., &#38;
    Zrenner, A. (2009). Imaging of Ferroelectric Micro-Domains in X-Cut Lithium Niobate
    by Confocal Second Harmonic Microscopy. <i>Ferroelectrics</i>, <i>389</i>(1),
    132–141. <a href="https://doi.org/10.1080/00150190902993267">https://doi.org/10.1080/00150190902993267</a>
  bibtex: '@article{Berth_Wiedemeier_Hüsch_Gui_Hu_Sohler_Zrenner_2009, title={Imaging
    of Ferroelectric Micro-Domains in X-Cut Lithium Niobate by Confocal Second Harmonic
    Microscopy}, volume={389}, DOI={<a href="https://doi.org/10.1080/00150190902993267">10.1080/00150190902993267</a>},
    number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Berth,
    Gerhard and Wiedemeier, Volker and Hüsch, Klaus-Peter and Gui, Li and Hu, Hui
    and Sohler, Wolfgang and Zrenner, Artur}, year={2009}, pages={132–141} }'
  chicago: 'Berth, Gerhard, Volker Wiedemeier, Klaus-Peter Hüsch, Li Gui, Hui Hu,
    Wolfgang Sohler, and Artur Zrenner. “Imaging of Ferroelectric Micro-Domains in
    X-Cut Lithium Niobate by Confocal Second Harmonic Microscopy.” <i>Ferroelectrics</i>
    389, no. 1 (2009): 132–41. <a href="https://doi.org/10.1080/00150190902993267">https://doi.org/10.1080/00150190902993267</a>.'
  ieee: G. Berth <i>et al.</i>, “Imaging of Ferroelectric Micro-Domains in X-Cut Lithium
    Niobate by Confocal Second Harmonic Microscopy,” <i>Ferroelectrics</i>, vol. 389,
    no. 1, pp. 132–141, 2009.
  mla: Berth, Gerhard, et al. “Imaging of Ferroelectric Micro-Domains in X-Cut Lithium
    Niobate by Confocal Second Harmonic Microscopy.” <i>Ferroelectrics</i>, vol. 389,
    no. 1, Informa UK Limited, 2009, pp. 132–41, doi:<a href="https://doi.org/10.1080/00150190902993267">10.1080/00150190902993267</a>.
  short: G. Berth, V. Wiedemeier, K.-P. Hüsch, L. Gui, H. Hu, W. Sohler, A. Zrenner,
    Ferroelectrics 389 (2009) 132–141.
date_created: 2018-09-20T12:54:14Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1080/00150190902993267
intvolume: '       389'
issue: '1'
keyword:
- Nonlinear microscopy
- ferroelectric micro-domains
- confocal imaging
- LiNbO3
language:
- iso: eng
page: 132-141
publication: Ferroelectrics
publication_identifier:
  issn:
  - 0015-0193
  - 1563-5112
publication_status: published
publisher: Informa UK Limited
status: public
title: Imaging of Ferroelectric Micro-Domains in X-Cut Lithium Niobate by Confocal
  Second Harmonic Microscopy
type: journal_article
user_id: '49428'
volume: 389
year: '2009'
...
---
_id: '4554'
abstract:
- lang: eng
  text: We have investigated the properties of neutral and charged excitons in single
    CdSe/ZnSe QD photodiodes by μ-photoluminescence spectroscopy. By applying a bias
    voltage, we have been able to control the number of electrons in a single QD by
    shifting the energy levels of the QD with respect to the Fermi level in the back
    contact. Also the quantum-confined Stark effect was observed as a function of
    the applied electric field.
article_type: original
author:
- first_name: S. Michaelis
  full_name: de Vasconcellos, S. Michaelis
  last_name: de Vasconcellos
- first_name: A.
  full_name: Pawlis, A.
  last_name: Pawlis
- first_name: C.
  full_name: Arens, C.
  last_name: Arens
- first_name: M.
  full_name: Panfilova, M.
  last_name: Panfilova
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: D.
  full_name: Schikora, D.
  last_name: Schikora
- first_name: K.
  full_name: Lischka, K.
  last_name: Lischka
citation:
  ama: de Vasconcellos SM, Pawlis A, Arens C, et al. Exciton spectroscopy on single
    CdSe/ZnSe quantum dot photodiodes. <i>Microelectronics Journal</i>. 2008;40(2):215-217.
    doi:<a href="https://doi.org/10.1016/j.mejo.2008.07.055">10.1016/j.mejo.2008.07.055</a>
  apa: de Vasconcellos, S. M., Pawlis, A., Arens, C., Panfilova, M., Zrenner, A.,
    Schikora, D., &#38; Lischka, K. (2008). Exciton spectroscopy on single CdSe/ZnSe
    quantum dot photodiodes. <i>Microelectronics Journal</i>, <i>40</i>(2), 215–217.
    <a href="https://doi.org/10.1016/j.mejo.2008.07.055">https://doi.org/10.1016/j.mejo.2008.07.055</a>
  bibtex: '@article{de Vasconcellos_Pawlis_Arens_Panfilova_Zrenner_Schikora_Lischka_2008,
    title={Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes}, volume={40},
    DOI={<a href="https://doi.org/10.1016/j.mejo.2008.07.055">10.1016/j.mejo.2008.07.055</a>},
    number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={de
    Vasconcellos, S. Michaelis and Pawlis, A. and Arens, C. and Panfilova, M. and
    Zrenner, Artur and Schikora, D. and Lischka, K.}, year={2008}, pages={215–217}
    }'
  chicago: 'Vasconcellos, S. Michaelis de, A. Pawlis, C. Arens, M. Panfilova, Artur
    Zrenner, D. Schikora, and K. Lischka. “Exciton Spectroscopy on Single CdSe/ZnSe
    Quantum Dot Photodiodes.” <i>Microelectronics Journal</i> 40, no. 2 (2008): 215–17.
    <a href="https://doi.org/10.1016/j.mejo.2008.07.055">https://doi.org/10.1016/j.mejo.2008.07.055</a>.'
  ieee: S. M. de Vasconcellos <i>et al.</i>, “Exciton spectroscopy on single CdSe/ZnSe
    quantum dot photodiodes,” <i>Microelectronics Journal</i>, vol. 40, no. 2, pp.
    215–217, 2008.
  mla: de Vasconcellos, S. Michaelis, et al. “Exciton Spectroscopy on Single CdSe/ZnSe
    Quantum Dot Photodiodes.” <i>Microelectronics Journal</i>, vol. 40, no. 2, Elsevier
    BV, 2008, pp. 215–17, doi:<a href="https://doi.org/10.1016/j.mejo.2008.07.055">10.1016/j.mejo.2008.07.055</a>.
  short: S.M. de Vasconcellos, A. Pawlis, C. Arens, M. Panfilova, A. Zrenner, D. Schikora,
    K. Lischka, Microelectronics Journal 40 (2008) 215–217.
date_created: 2018-09-20T13:37:03Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.mejo.2008.07.055
intvolume: '        40'
issue: '2'
keyword:
- CdSe quantum dots
- Photodiode
- Stark effect
language:
- iso: eng
page: 215-217
publication: Microelectronics Journal
publication_identifier:
  issn:
  - 0026-2692
publication_status: published
publisher: Elsevier BV
status: public
title: Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes
type: journal_article
user_id: '49428'
volume: 40
year: '2008'
...
---
_id: '4555'
abstract:
- lang: eng
  text: Semiconductor microdiscs are promising for applications in photonics and quantum-information
    processing, such as efficient solid-state-based single-photon emitters. Strain
    in the multilayer structure of those devices has an important influence on their
    optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe
    microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence
    measurements of microdiscs reveal substantially broadened emission lines with
    a shift to lower energy at the undercut part of microdiscs, indicating local relaxation
    in this area. The distribution of the strain in the microdiscs is obtained from
    an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs
    is free of defects.
article_type: original
author:
- first_name: M.
  full_name: Panfilova, M.
  last_name: Panfilova
- first_name: A.
  full_name: Pawlis, A.
  last_name: Pawlis
- first_name: C.
  full_name: Arens, C.
  last_name: Arens
- first_name: S. Michaelis
  full_name: de Vasconcellos, S. Michaelis
  last_name: de Vasconcellos
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: K.P.
  full_name: Hüsch, K.P.
  last_name: Hüsch
- first_name: V.
  full_name: Wiedemeier, V.
  last_name: Wiedemeier
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: K.
  full_name: Lischka, K.
  last_name: Lischka
citation:
  ama: Panfilova M, Pawlis A, Arens C, et al. Micro-Raman imaging and micro-photoluminescence
    measurements of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>.
    2008;40(2):221-223. doi:<a href="https://doi.org/10.1016/j.mejo.2008.07.056">10.1016/j.mejo.2008.07.056</a>
  apa: Panfilova, M., Pawlis, A., Arens, C., de Vasconcellos, S. M., Berth, G., Hüsch,
    K. P., … Lischka, K. (2008). Micro-Raman imaging and micro-photoluminescence measurements
    of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>, <i>40</i>(2),
    221–223. <a href="https://doi.org/10.1016/j.mejo.2008.07.056">https://doi.org/10.1016/j.mejo.2008.07.056</a>
  bibtex: '@article{Panfilova_Pawlis_Arens_de Vasconcellos_Berth_Hüsch_Wiedemeier_Zrenner_Lischka_2008,
    title={Micro-Raman imaging and micro-photoluminescence measurements of strain
    in ZnMgSe/ZnSe microdiscs}, volume={40}, DOI={<a href="https://doi.org/10.1016/j.mejo.2008.07.056">10.1016/j.mejo.2008.07.056</a>},
    number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Panfilova,
    M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard
    and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}, year={2008},
    pages={221–223} }'
  chicago: 'Panfilova, M., A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, Gerhard
    Berth, K.P. Hüsch, V. Wiedemeier, Artur Zrenner, and K. Lischka. “Micro-Raman
    Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.”
    <i>Microelectronics Journal</i> 40, no. 2 (2008): 221–23. <a href="https://doi.org/10.1016/j.mejo.2008.07.056">https://doi.org/10.1016/j.mejo.2008.07.056</a>.'
  ieee: M. Panfilova <i>et al.</i>, “Micro-Raman imaging and micro-photoluminescence
    measurements of strain in ZnMgSe/ZnSe microdiscs,” <i>Microelectronics Journal</i>,
    vol. 40, no. 2, pp. 221–223, 2008.
  mla: Panfilova, M., et al. “Micro-Raman Imaging and Micro-Photoluminescence Measurements
    of Strain in ZnMgSe/ZnSe Microdiscs.” <i>Microelectronics Journal</i>, vol. 40,
    no. 2, Elsevier BV, 2008, pp. 221–23, doi:<a href="https://doi.org/10.1016/j.mejo.2008.07.056">10.1016/j.mejo.2008.07.056</a>.
  short: M. Panfilova, A. Pawlis, C. Arens, S.M. de Vasconcellos, G. Berth, K.P. Hüsch,
    V. Wiedemeier, A. Zrenner, K. Lischka, Microelectronics Journal 40 (2008) 221–223.
date_created: 2018-09-20T13:39:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.mejo.2008.07.056
intvolume: '        40'
issue: '2'
keyword:
- Raman
- Photoluminescence
- Microdisc
- ZnSe
language:
- iso: eng
page: 221-223
publication: Microelectronics Journal
publication_identifier:
  issn:
  - 0026-2692
publication_status: published
publisher: Elsevier BV
status: public
title: Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe
  microdiscs
type: journal_article
user_id: '49428'
volume: 40
year: '2008'
...
---
_id: '4557'
abstract:
- lang: eng
  text: The optical properties of semiconductor quantum dots are in many respects
    similar to those of atoms. Since quantum dots can be defined by state-of-the-art
    semiconductor technologies, they exhibit long-term stability and allow for well-controlled
    and efficient interactions with both optical and electrical fields. Resonant ps
    excitation of single quantum dot photodiodes leads to new classes of coherent
    optoelectronic functions and devices, which exhibit precise state preparation,
    phase-sensitive optical manipulations and the control of quantum states by electrical
    fields.
article_number: '454210'
article_type: original
author:
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: P
  full_name: Ester, P
  last_name: Ester
- first_name: S
  full_name: Michaelis de Vasconcellos, S
  last_name: Michaelis de Vasconcellos
- first_name: M C
  full_name: Hübner, M C
  last_name: Hübner
- first_name: L
  full_name: Lackmann, L
  last_name: Lackmann
- first_name: S
  full_name: Stufler, S
  last_name: Stufler
- first_name: M
  full_name: Bichler, M
  last_name: Bichler
citation:
  ama: 'Zrenner A, Ester P, Michaelis de Vasconcellos S, et al. Coherent optoelectronics
    with single quantum dots. <i>Journal of Physics: Condensed Matter</i>. 2008;20(45).
    doi:<a href="https://doi.org/10.1088/0953-8984/20/45/454210">10.1088/0953-8984/20/45/454210</a>'
  apa: 'Zrenner, A., Ester, P., Michaelis de Vasconcellos, S., Hübner, M. C., Lackmann,
    L., Stufler, S., &#38; Bichler, M. (2008). Coherent optoelectronics with single
    quantum dots. <i>Journal of Physics: Condensed Matter</i>, <i>20</i>(45). <a href="https://doi.org/10.1088/0953-8984/20/45/454210">https://doi.org/10.1088/0953-8984/20/45/454210</a>'
  bibtex: '@article{Zrenner_Ester_Michaelis de Vasconcellos_Hübner_Lackmann_Stufler_Bichler_2008,
    title={Coherent optoelectronics with single quantum dots}, volume={20}, DOI={<a
    href="https://doi.org/10.1088/0953-8984/20/45/454210">10.1088/0953-8984/20/45/454210</a>},
    number={45454210}, journal={Journal of Physics: Condensed Matter}, publisher={IOP
    Publishing}, author={Zrenner, Artur and Ester, P and Michaelis de Vasconcellos,
    S and Hübner, M C and Lackmann, L and Stufler, S and Bichler, M}, year={2008}
    }'
  chicago: 'Zrenner, Artur, P Ester, S Michaelis de Vasconcellos, M C Hübner, L Lackmann,
    S Stufler, and M Bichler. “Coherent Optoelectronics with Single Quantum Dots.”
    <i>Journal of Physics: Condensed Matter</i> 20, no. 45 (2008). <a href="https://doi.org/10.1088/0953-8984/20/45/454210">https://doi.org/10.1088/0953-8984/20/45/454210</a>.'
  ieee: 'A. Zrenner <i>et al.</i>, “Coherent optoelectronics with single quantum dots,”
    <i>Journal of Physics: Condensed Matter</i>, vol. 20, no. 45, 2008.'
  mla: 'Zrenner, Artur, et al. “Coherent Optoelectronics with Single Quantum Dots.”
    <i>Journal of Physics: Condensed Matter</i>, vol. 20, no. 45, 454210, IOP Publishing,
    2008, doi:<a href="https://doi.org/10.1088/0953-8984/20/45/454210">10.1088/0953-8984/20/45/454210</a>.'
  short: 'A. Zrenner, P. Ester, S. Michaelis de Vasconcellos, M.C. Hübner, L. Lackmann,
    S. Stufler, M. Bichler, Journal of Physics: Condensed Matter 20 (2008).'
date_created: 2018-09-20T13:51:11Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0953-8984/20/45/454210
intvolume: '        20'
issue: '45'
language:
- iso: eng
publication: 'Journal of Physics: Condensed Matter'
publication_identifier:
  issn:
  - 0953-8984
  - 1361-648X
publication_status: published
publisher: IOP Publishing
status: public
title: Coherent optoelectronics with single quantum dots
type: journal_article
user_id: '49428'
volume: 20
year: '2008'
...
---
_id: '4556'
abstract:
- lang: eng
  text: Very clean single photon emission from a single InGaAs/GaAs quantum dot is
    demonstrated by the use of a coherent optical state preparation. We present a
    concept for single photon emission, which uses p-shell Rabi-flopping followed
    by a sequence of relaxation and recombination. The proof of the (clean) single
    photon emission is performed by photon correlation measurements.
article_type: original
author:
- first_name: P.
  full_name: Ester, P.
  last_name: Ester
- first_name: L.
  full_name: Lackmann, L.
  last_name: Lackmann
- first_name: M.C.
  full_name: Hübner, M.C.
  last_name: Hübner
- first_name: S.
  full_name: Michaelis de Vasconcellos, S.
  last_name: Michaelis de Vasconcellos
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: M.
  full_name: Bichler, M.
  last_name: Bichler
citation:
  ama: 'Ester P, Lackmann L, Hübner MC, Michaelis de Vasconcellos S, Zrenner A, Bichler
    M. p-Shell Rabi-flopping and single photon emission in an InGaAs/GaAs quantum
    dot. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2007;40(6):2004-2006.
    doi:<a href="https://doi.org/10.1016/j.physe.2007.09.129">10.1016/j.physe.2007.09.129</a>'
  apa: 'Ester, P., Lackmann, L., Hübner, M. C., Michaelis de Vasconcellos, S., Zrenner,
    A., &#38; Bichler, M. (2007). p-Shell Rabi-flopping and single photon emission
    in an InGaAs/GaAs quantum dot. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    <i>40</i>(6), 2004–2006. <a href="https://doi.org/10.1016/j.physe.2007.09.129">https://doi.org/10.1016/j.physe.2007.09.129</a>'
  bibtex: '@article{Ester_Lackmann_Hübner_Michaelis de Vasconcellos_Zrenner_Bichler_2007,
    title={p-Shell Rabi-flopping and single photon emission in an InGaAs/GaAs quantum
    dot}, volume={40}, DOI={<a href="https://doi.org/10.1016/j.physe.2007.09.129">10.1016/j.physe.2007.09.129</a>},
    number={6}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier
    BV}, author={Ester, P. and Lackmann, L. and Hübner, M.C. and Michaelis de Vasconcellos,
    S. and Zrenner, Artur and Bichler, M.}, year={2007}, pages={2004–2006} }'
  chicago: 'Ester, P., L. Lackmann, M.C. Hübner, S. Michaelis de Vasconcellos, Artur
    Zrenner, and M. Bichler. “P-Shell Rabi-Flopping and Single Photon Emission in
    an InGaAs/GaAs Quantum Dot.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>
    40, no. 6 (2007): 2004–6. <a href="https://doi.org/10.1016/j.physe.2007.09.129">https://doi.org/10.1016/j.physe.2007.09.129</a>.'
  ieee: 'P. Ester, L. Lackmann, M. C. Hübner, S. Michaelis de Vasconcellos, A. Zrenner,
    and M. Bichler, “p-Shell Rabi-flopping and single photon emission in an InGaAs/GaAs
    quantum dot,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol.
    40, no. 6, pp. 2004–2006, 2007.'
  mla: 'Ester, P., et al. “P-Shell Rabi-Flopping and Single Photon Emission in an
    InGaAs/GaAs Quantum Dot.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    vol. 40, no. 6, Elsevier BV, 2007, pp. 2004–06, doi:<a href="https://doi.org/10.1016/j.physe.2007.09.129">10.1016/j.physe.2007.09.129</a>.'
  short: 'P. Ester, L. Lackmann, M.C. Hübner, S. Michaelis de Vasconcellos, A. Zrenner,
    M. Bichler, Physica E: Low-Dimensional Systems and Nanostructures 40 (2007) 2004–2006.'
date_created: 2018-09-20T13:48:55Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.physe.2007.09.129
intvolume: '        40'
issue: '6'
keyword:
- Antibunching
- Single photon emission
- Rabi oscillation
- Coherent manipulation
language:
- iso: eng
page: 2004-2006
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: p-Shell Rabi-flopping and single photon emission in an InGaAs/GaAs quantum
  dot
type: journal_article
user_id: '49428'
volume: 40
year: '2007'
...