[{"doi":"10.1038/s41598-021-98569-6","language":[{"iso":"eng"}],"article_number":"19081","main_file_link":[{"url":"https://www.nature.com/articles/s41598-021-98569-6","open_access":"1"}],"article_type":"original","intvolume":"        11","publication_status":"published","date_updated":"2023-10-09T09:15:12Z","author":[{"full_name":"Hajlaoui, Mahdi","last_name":"Hajlaoui","first_name":"Mahdi"},{"last_name":"Ponzoni","first_name":"Stefano","full_name":"Ponzoni, Stefano"},{"full_name":"Deppe, Michael","first_name":"Michael","last_name":"Deppe"},{"full_name":"Henksmeier, Tobias","first_name":"Tobias","last_name":"Henksmeier"},{"last_name":"As","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","id":"14"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"id":"30525","full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101","first_name":"Thomas","last_name":"Zentgraf"},{"full_name":"Springholz, Gunther","last_name":"Springholz","first_name":"Gunther"},{"first_name":"Claus Michael","last_name":"Schneider","full_name":"Schneider, Claus Michael"},{"last_name":"Cramm","first_name":"Stefan","full_name":"Cramm, Stefan"},{"first_name":"Mirko","last_name":"Cinchetti","full_name":"Cinchetti, Mirko"}],"publication_identifier":{"issn":["2045-2322"]},"year":"2021","title":"Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures","department":[{"_id":"15"},{"_id":"230"},{"_id":"289"}],"type":"journal_article","date_created":"2021-10-01T07:29:15Z","abstract":[{"text":"<jats:title>Abstract</jats:title><jats:p>Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaging in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low-energy ARPES (photon energy ~ 7 eV) to increase depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion, because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low-energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples’ properties required to perform extremely low-energy ARPES experiments on electronic states buried in semiconductor heterostructures.</jats:p>","lang":"eng"}],"publication":"Scientific Reports","volume":11,"user_id":"14931","_id":"25227","status":"public","oa":"1","project":[{"_id":"53","grant_number":"231447078","name":"TRR 142"},{"name":"TRR 142 - Project Area A","_id":"54"},{"name":"TRR 142 - Subproject A8","grant_number":"231447078","_id":"65"},{"_id":"55","name":"TRR 142 - Project Area B"},{"_id":"67","name":"TRR 142 - Subproject B2"},{"_id":"63","grant_number":"231447078","name":"TRR 142 - Subproject A6"}],"quality_controlled":"1","citation":{"chicago":"Hajlaoui, Mahdi, Stefano Ponzoni, Michael Deppe, Tobias Henksmeier, Donat Josef As, Dirk Reuter, Thomas Zentgraf, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” <i>Scientific Reports</i> 11 (2021). <a href=\"https://doi.org/10.1038/s41598-021-98569-6\">https://doi.org/10.1038/s41598-021-98569-6</a>.","short":"M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).","ieee":"M. Hajlaoui <i>et al.</i>, “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” <i>Scientific Reports</i>, vol. 11, Art. no. 19081, 2021, doi: <a href=\"https://doi.org/10.1038/s41598-021-98569-6\">10.1038/s41598-021-98569-6</a>.","apa":"Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D., Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., &#38; Cinchetti, M. (2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. <i>Scientific Reports</i>, <i>11</i>, Article 19081. <a href=\"https://doi.org/10.1038/s41598-021-98569-6\">https://doi.org/10.1038/s41598-021-98569-6</a>","bibtex":"@article{Hajlaoui_Ponzoni_Deppe_Henksmeier_As_Reuter_Zentgraf_Springholz_Schneider_Cramm_et al._2021, title={Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures}, volume={11}, DOI={<a href=\"https://doi.org/10.1038/s41598-021-98569-6\">10.1038/s41598-021-98569-6</a>}, number={19081}, journal={Scientific Reports}, author={Hajlaoui, Mahdi and Ponzoni, Stefano and Deppe, Michael and Henksmeier, Tobias and As, Donat Josef and Reuter, Dirk and Zentgraf, Thomas and Springholz, Gunther and Schneider, Claus Michael and Cramm, Stefan and et al.}, year={2021} }","ama":"Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. <i>Scientific Reports</i>. 2021;11. doi:<a href=\"https://doi.org/10.1038/s41598-021-98569-6\">10.1038/s41598-021-98569-6</a>","mla":"Hajlaoui, Mahdi, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” <i>Scientific Reports</i>, vol. 11, 19081, 2021, doi:<a href=\"https://doi.org/10.1038/s41598-021-98569-6\">10.1038/s41598-021-98569-6</a>."}},{"date_updated":"2022-01-06T07:03:58Z","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"last_name":"Deppe","first_name":"M.","full_name":"Deppe, M."},{"last_name":"Gerlach","first_name":"J. W.","full_name":"Gerlach, J. W."},{"full_name":"Shvarkov, S.","last_name":"Shvarkov","first_name":"S."},{"full_name":"Rogalla, D.","first_name":"D.","last_name":"Rogalla"},{"first_name":"H.-W.","last_name":"Becker","full_name":"Becker, H.-W."},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"id":"14","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef","full_name":"As, Donat Josef"}],"title":"Germanium doping of cubic GaN grown by molecular beam epitaxy","status":"public","year":"2019","doi":"10.1063/1.5066095","user_id":"14","_id":"8646","language":[{"iso":"eng"}],"article_number":"095703","project":[{"name":"TRR 142 - Subproject B2","_id":"67"}],"citation":{"mla":"Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” <i>Journal of Applied Physics</i>, 095703, 2019, doi:<a href=\"https://doi.org/10.1063/1.5066095\">10.1063/1.5066095</a>.","bibtex":"@article{Deppe_Gerlach_Shvarkov_Rogalla_Becker_Reuter_As_2019, title={Germanium doping of cubic GaN grown by molecular beam epitaxy}, DOI={<a href=\"https://doi.org/10.1063/1.5066095\">10.1063/1.5066095</a>}, number={095703}, journal={Journal of Applied Physics}, author={Deppe, M. and Gerlach, J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and As, Donat Josef}, year={2019} }","ama":"Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. <i>Journal of Applied Physics</i>. 2019. doi:<a href=\"https://doi.org/10.1063/1.5066095\">10.1063/1.5066095</a>","ieee":"M. Deppe <i>et al.</i>, “Germanium doping of cubic GaN grown by molecular beam epitaxy,” <i>Journal of Applied Physics</i>, 2019.","apa":"Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., &#38; As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. <i>Journal of Applied Physics</i>. <a href=\"https://doi.org/10.1063/1.5066095\">https://doi.org/10.1063/1.5066095</a>","short":"M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).","chicago":"Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter, and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” <i>Journal of Applied Physics</i>, 2019. <a href=\"https://doi.org/10.1063/1.5066095\">https://doi.org/10.1063/1.5066095</a>."},"publication":"Journal of Applied Physics","department":[{"_id":"230"},{"_id":"429"}],"type":"journal_article","date_created":"2019-03-26T12:48:57Z"},{"issue":"15","publication":"Physical Review B","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"429"},{"_id":"230"},{"_id":"35"}],"type":"journal_article","date_created":"2021-07-29T08:13:23Z","intvolume":"       100","date_updated":"2023-04-21T11:30:46Z","publication_status":"published","publication_identifier":{"issn":["2469-9950","2469-9969"]},"author":[{"full_name":"Vondran, J.","last_name":"Vondran","first_name":"J."},{"full_name":"Spitzer, F.","last_name":"Spitzer","first_name":"F."},{"full_name":"Bayer, M.","last_name":"Bayer","first_name":"M."},{"last_name":"Akimov","first_name":"I. A.","full_name":"Akimov, I. A."},{"id":"38163","full_name":"Trautmann, Alexander","first_name":"Alexander","last_name":"Trautmann"},{"full_name":"Reichelt, Matthias","first_name":"Matthias","last_name":"Reichelt","id":"138"},{"last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"},{"full_name":"Weber, N.","first_name":"N.","last_name":"Weber"},{"full_name":"Meier, Torsten","last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","id":"344"},{"full_name":"André, R.","first_name":"R.","last_name":"André"},{"first_name":"H.","last_name":"Mariette","full_name":"Mariette, H."}],"title":"Spatially asymmetric transients of propagating exciton-polariton modes in a planar CdZnTe/CdMgTe guiding structure","year":"2019","doi":"10.1103/physrevb.100.155308","language":[{"iso":"eng"}],"project":[{"_id":"53","name":"TRR 142"},{"_id":"54","name":"TRR 142 - Project Area A"},{"name":"TRR 142 - Project Area C","_id":"56"},{"_id":"55","name":"TRR 142 - Project Area B"},{"name":"TRR 142 - Subproject A2","_id":"59"},{"_id":"67","name":"TRR 142 - Subproject B2"},{"name":"TRR 142 - Subproject B3","_id":"68"},{"name":"TRR 142 - Subproject A5","_id":"62"},{"name":"TRR 142 - Subproject C1","_id":"71"}],"citation":{"mla":"Vondran, J., et al. “Spatially Asymmetric Transients of Propagating Exciton-Polariton Modes in a Planar CdZnTe/CdMgTe Guiding Structure.” <i>Physical Review B</i>, vol. 100, no. 15, 2019, p. 155308, doi:<a href=\"https://doi.org/10.1103/physrevb.100.155308\">10.1103/physrevb.100.155308</a>.","ama":"Vondran J, Spitzer F, Bayer M, et al. Spatially asymmetric transients of propagating exciton-polariton modes in a planar CdZnTe/CdMgTe guiding structure. <i>Physical Review B</i>. 2019;100(15):155308. doi:<a href=\"https://doi.org/10.1103/physrevb.100.155308\">10.1103/physrevb.100.155308</a>","bibtex":"@article{Vondran_Spitzer_Bayer_Akimov_Trautmann_Reichelt_Meier_Weber_Meier_André_et al._2019, title={Spatially asymmetric transients of propagating exciton-polariton modes in a planar CdZnTe/CdMgTe guiding structure}, volume={100}, DOI={<a href=\"https://doi.org/10.1103/physrevb.100.155308\">10.1103/physrevb.100.155308</a>}, number={15}, journal={Physical Review B}, author={Vondran, J. and Spitzer, F. and Bayer, M. and Akimov, I. A. and Trautmann, Alexander and Reichelt, Matthias and Meier, Cedrik and Weber, N. and Meier, Torsten and André, R. and et al.}, year={2019}, pages={155308} }","apa":"Vondran, J., Spitzer, F., Bayer, M., Akimov, I. A., Trautmann, A., Reichelt, M., Meier, C., Weber, N., Meier, T., André, R., &#38; Mariette, H. (2019). Spatially asymmetric transients of propagating exciton-polariton modes in a planar CdZnTe/CdMgTe guiding structure. <i>Physical Review B</i>, <i>100</i>(15), 155308. <a href=\"https://doi.org/10.1103/physrevb.100.155308\">https://doi.org/10.1103/physrevb.100.155308</a>","ieee":"J. Vondran <i>et al.</i>, “Spatially asymmetric transients of propagating exciton-polariton modes in a planar CdZnTe/CdMgTe guiding structure,” <i>Physical Review B</i>, vol. 100, no. 15, p. 155308, 2019, doi: <a href=\"https://doi.org/10.1103/physrevb.100.155308\">10.1103/physrevb.100.155308</a>.","chicago":"Vondran, J., F. Spitzer, M. Bayer, I. A. Akimov, Alexander Trautmann, Matthias Reichelt, Cedrik Meier, et al. “Spatially Asymmetric Transients of Propagating Exciton-Polariton Modes in a Planar CdZnTe/CdMgTe Guiding Structure.” <i>Physical Review B</i> 100, no. 15 (2019): 155308. <a href=\"https://doi.org/10.1103/physrevb.100.155308\">https://doi.org/10.1103/physrevb.100.155308</a>.","short":"J. Vondran, F. Spitzer, M. Bayer, I.A. Akimov, A. Trautmann, M. Reichelt, C. Meier, N. Weber, T. Meier, R. André, H. Mariette, Physical Review B 100 (2019) 155308."},"status":"public","volume":100,"user_id":"16199","_id":"22887","page":"155308"},{"project":[{"name":"TRR 142","_id":"53"},{"name":"TRR 142 - Project Area B","_id":"55"},{"_id":"67","name":"TRR 142 - Subproject B2"}],"citation":{"bibtex":"@article{Jostmeier_Mangold_Zimmer_Karl_Krenner_Ruppert_Betz_2016, title={Thermochromic modulation of surface plasmon polaritons in vanadium dioxide nanocomposites}, volume={24}, DOI={<a href=\"https://doi.org/10.1364/oe.24.017321\">10.1364/oe.24.017321</a>}, number={1517321}, journal={Optics Express}, publisher={The Optical Society}, author={Jostmeier, Thorben and Mangold, Moritz and Zimmer, Johannes and Karl, Helmut and Krenner, Hubert J. and Ruppert, Claudia and Betz, Markus}, year={2016} }","ama":"Jostmeier T, Mangold M, Zimmer J, et al. Thermochromic modulation of surface plasmon polaritons in vanadium dioxide nanocomposites. <i>Optics Express</i>. 2016;24(15). doi:<a href=\"https://doi.org/10.1364/oe.24.017321\">10.1364/oe.24.017321</a>","mla":"Jostmeier, Thorben, et al. “Thermochromic Modulation of Surface Plasmon Polaritons in Vanadium Dioxide Nanocomposites.” <i>Optics Express</i>, vol. 24, no. 15, 17321, The Optical Society, 2016, doi:<a href=\"https://doi.org/10.1364/oe.24.017321\">10.1364/oe.24.017321</a>.","chicago":"Jostmeier, Thorben, Moritz Mangold, Johannes Zimmer, Helmut Karl, Hubert J. Krenner, Claudia Ruppert, and Markus Betz. “Thermochromic Modulation of Surface Plasmon Polaritons in Vanadium Dioxide Nanocomposites.” <i>Optics Express</i> 24, no. 15 (2016). <a href=\"https://doi.org/10.1364/oe.24.017321\">https://doi.org/10.1364/oe.24.017321</a>.","short":"T. Jostmeier, M. Mangold, J. Zimmer, H. Karl, H.J. Krenner, C. Ruppert, M. Betz, Optics Express 24 (2016).","ieee":"T. Jostmeier <i>et al.</i>, “Thermochromic modulation of surface plasmon polaritons in vanadium dioxide nanocomposites,” <i>Optics Express</i>, vol. 24, no. 15, 2016.","apa":"Jostmeier, T., Mangold, M., Zimmer, J., Karl, H., Krenner, H. J., Ruppert, C., &#38; Betz, M. (2016). Thermochromic modulation of surface plasmon polaritons in vanadium dioxide nanocomposites. <i>Optics Express</i>, <i>24</i>(15). <a href=\"https://doi.org/10.1364/oe.24.017321\">https://doi.org/10.1364/oe.24.017321</a>"},"volume":24,"user_id":"49428","_id":"6533","publisher":"The Optical Society","status":"public","department":[{"_id":"230"}],"type":"journal_article","date_created":"2019-01-09T09:34:56Z","abstract":[{"lang":"eng","text":"We propose and implement a new concept for thermochromic plasmonic elements. It is based on vanadium dioxide (VO2) nanocrystals located in the near field of surface plasmon polaritons supported by an otherwise unstructured gold thin film. When the VO2 undergoes the metal-insulator phase transition, the coupling conditions for conversion of light into propagating surface plasmon polaritons change markedly. In particular, we realize thermochromic plasmonic grating couplers with substantial switching contrast as well as tunable plasmonic couplers in a Kretschmann configuration. The use of VO2 nanocrystals permits highly repetitive switching and room temperature operation. Simulations based on the actual dielectric function of our VO2 nanocrystals agree well with the experiment."}],"issue":"15","publication":"Optics Express","doi":"10.1364/oe.24.017321","language":[{"iso":"eng"}],"article_number":"17321","intvolume":"        24","date_updated":"2022-01-06T07:03:10Z","publication_status":"published","publication_identifier":{"issn":["1094-4087"]},"author":[{"full_name":"Jostmeier, Thorben","last_name":"Jostmeier","first_name":"Thorben"},{"last_name":"Mangold","first_name":"Moritz","full_name":"Mangold, Moritz"},{"full_name":"Zimmer, Johannes","last_name":"Zimmer","first_name":"Johannes"},{"last_name":"Karl","first_name":"Helmut","full_name":"Karl, Helmut"},{"full_name":"Krenner, Hubert J.","last_name":"Krenner","first_name":"Hubert J."},{"first_name":"Claudia","last_name":"Ruppert","full_name":"Ruppert, Claudia"},{"first_name":"Markus","last_name":"Betz","full_name":"Betz, Markus"}],"title":"Thermochromic modulation of surface plasmon polaritons in vanadium dioxide nanocomposites","year":"2016"}]