@article{7694, author = {{Tscheuschner, Ralf D. and Hoch, Sascha and Leschinsky, Eva and Meier, Cedrik and Theis, Sabine and Wieck, Andreas D.}}, issn = {{0217-9792}}, journal = {{International Journal of Modern Physics B}}, number = {{11}}, pages = {{1147--1170}}, publisher = {{World Scientific Pub Co Pte Lt}}, title = {{{Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy}}}, doi = {{10.1142/s0217979298000636}}, volume = {{12}}, year = {{1998}}, } @article{7693, author = {{Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, D. and Wieck, A. D.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{11}}, pages = {{6605--6607}}, publisher = {{AIP Publishing}}, title = {{{Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells}}}, doi = {{10.1063/1.371720}}, volume = {{86}}, year = {{1999}}, } @article{7691, author = {{Diaconescu, Dorina and Hoch, Sascha and Heidtkamp, Christian and Meier, Cedrik and Reuter, Dirk and Wieck, Andreas D}}, issn = {{0921-4526}}, journal = {{Physica B: Condensed Matter}}, pages = {{1906--1907}}, publisher = {{Elsevier BV}}, title = {{{A new peak in the bend resistance of a four-terminal device written by FIB implantation}}}, doi = {{10.1016/s0921-4526(99)03002-1}}, volume = {{284-288}}, year = {{2000}}, } @inproceedings{7692, author = {{Reuter, D. and Meier, Cedrik and Alvarez, M. A. and Koch, J. and Wieck, A. D.}}, booktitle = {{IECON Proc. }}, pages = {{1878}}, title = {{{Laterally resolved doping by focused ion beam implantation}}}, year = {{2000}}, } @article{7690, author = {{Heidtkamp, C. and Meier, Cedrik and Reuter, D. and Versen, M. and Hoch, S. and Diaconescu, D. and Wieck, A.D.}}, issn = {{0921-4526}}, journal = {{Physica B: Condensed Matter}}, pages = {{1728--1729}}, publisher = {{Elsevier BV}}, title = {{{Tunable backscattering in quantum Hall systems induced by neighbouring gates}}}, doi = {{10.1016/s0921-4526(99)02892-6}}, volume = {{284-288}}, year = {{2000}}, } @article{8767, author = {{Reuter, Dirk and Meier, Cedrik and Álvarez, M. A. Serrano and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, pages = {{377--379}}, title = {{{Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices}}}, doi = {{10.1063/1.1386618}}, volume = {{79}}, year = {{2001}}, } @article{8737, author = {{Reuter, Dirk and Meier, Cedrik and Seekamp, A and Wieck, A.D}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, pages = {{938--941}}, title = {{{Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping}}}, doi = {{10.1016/s1386-9477(02)00239-4}}, volume = {{13}}, year = {{2002}}, } @article{7684, author = {{Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{6}}, pages = {{585--589}}, publisher = {{IOP Publishing}}, title = {{{Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping}}}, doi = {{10.1088/0268-1242/17/6/315}}, volume = {{17}}, year = {{2002}}, } @article{7685, author = {{Rahm, M. and Raabe, J. and Pulwey, R. and Biberger, J. and Wegscheider, W. and Weiss, D. and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{10}}, pages = {{7980}}, publisher = {{AIP Publishing}}, title = {{{Planar Hall sensors for micro-Hall magnetometry}}}, doi = {{10.1063/1.1453338}}, volume = {{91}}, year = {{2002}}, } @article{7682, author = {{Riedesel, C and Meier, Cedrik and Schafmeister, P and Reuter, D and Wieck, A.D}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, pages = {{503--504}}, publisher = {{Elsevier BV}}, title = {{{Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs}}}, doi = {{10.1016/s1386-9477(02)00849-4}}, volume = {{17}}, year = {{2003}}, } @article{7683, author = {{Reuter, D. and Riedesel, C. and Schafmeister, P. and Meier, Cedrik and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{3}}, pages = {{481--483}}, publisher = {{AIP Publishing}}, title = {{{Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs}}}, doi = {{10.1063/1.1539925}}, volume = {{82}}, year = {{2003}}, } @article{7681, author = {{Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{10}}, pages = {{6100--6106}}, publisher = {{AIP Publishing}}, title = {{{Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}}}, doi = {{10.1063/1.1563032}}, volume = {{93}}, year = {{2003}}, } @article{7678, author = {{Haberer, E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and DenBaars, S. P. and Hu, E. L.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{22}}, pages = {{5179--5181}}, publisher = {{AIP Publishing}}, title = {{{Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching}}}, doi = {{10.1063/1.1829167}}, volume = {{85}}, year = {{2004}}, } @article{7679, author = {{Knipping, Jörg and Wiggers, Hartmut and Rellinghaus, Bernd and Roth, Paul and Konjhodzic, Denan and Meier, Cedrik}}, issn = {{1533-4880}}, journal = {{Journal of Nanoscience and Nanotechnology}}, number = {{8}}, pages = {{1039--1044}}, publisher = {{American Scientific Publishers}}, title = {{{Synthesis of High Purity Silicon Nanoparticles in a Low Pressure Microwave Reactor}}}, doi = {{10.1166/jnn.2004.149}}, volume = {{4}}, year = {{2004}}, } @article{7680, author = {{Wibbelhoff, O and Meier, Cedrik and Lorke, A and Schafmeister, P and Wieck, A.D}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, number = {{2-4}}, pages = {{516--520}}, publisher = {{Elsevier BV}}, title = {{{Wave function mapping of self-assembled quantum dots by capacitance spectroscopy}}}, doi = {{10.1016/j.physe.2003.11.077}}, volume = {{21}}, year = {{2004}}, } @article{7658, author = {{Reuter, D. and Kailuweit, P. and Wieck, A. D. and Zeitler, U. and Wibbelhoff, O. and Meier, Cedrik and Lorke, A. and Maan, J. C.}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, number = {{2}}, publisher = {{American Physical Society (APS)}}, title = {{{Coulomb-Interaction-Induced Incomplete Shell Filling in the Hole System of InAs Quantum Dots}}}, doi = {{10.1103/physrevlett.94.026808}}, volume = {{94}}, year = {{2005}}, } @article{8674, author = {{Reuter, Dirk and Kailuweit, P. and Wieck, A. D. and Zeitler, U. and Wibbelhoff, O. and Meier, Cedrik and Lorke, A. and Maan, J. C.}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, title = {{{Coulomb-Interaction-Induced Incomplete Shell Filling in the Hole System of InAs Quantum Dots}}}, doi = {{10.1103/physrevlett.94.026808}}, year = {{2005}}, } @inproceedings{7677, author = {{Lüttjohann, S. and Meier, Cedrik and Lork, A. and Reuter, D. and Wieck, A. D.}}, booktitle = {{Physics of Semiconductors}}, pages = {{733}}, title = {{{Emission from neutral and charged excitons in self-organized InAs quantum dots: Band bending vs. Pauli-blocking}}}, volume = {{772}}, year = {{2005}}, } @article{7653, author = {{Choi, Y.-S. and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P. and Nakamura, S. and Hu, E. L. and Meier, Cedrik}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{24}}, publisher = {{AIP Publishing}}, title = {{{GaN blue photonic crystal membrane nanocavities}}}, doi = {{10.1063/1.2147713}}, volume = {{87}}, year = {{2005}}, } @article{7657, author = {{Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel and Wiggers, Hartmut}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{8}}, publisher = {{AIP Publishing}}, title = {{{Infrared properties of silicon nanoparticles}}}, doi = {{10.1063/1.1866475}}, volume = {{97}}, year = {{2005}}, } @article{7676, author = {{Haberer, E. D. and Meier, Cedrik and Sharma, R. and Stonas, A. R. and DenBaars, S. P. and Nakamura, S. and Hu, E. L.}}, issn = {{1610-1634}}, journal = {{physica status solidi (c)}}, number = {{7}}, pages = {{2845--2848}}, publisher = {{Wiley}}, title = {{{Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching}}}, doi = {{10.1002/pssc.200461505}}, volume = {{2}}, year = {{2005}}, } @inproceedings{7671, author = {{Choi, Y.-S. and Meier, Cedrik and Sharma, R. and Hennessy, K. and Haberer, E. D. and Gao, Y. and Nakamura, S. and Hu, E. L.}}, booktitle = {{2005 Pacific Rim Conference on Lasers and Electro-Optics}}, isbn = {{0-7803-9242-6}}, pages = {{69}}, title = {{{Optical properties of GaN photonic crystal membrane nanocavities}}}, year = {{2005}}, } @article{7655, author = {{David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars, S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction}}}, doi = {{10.1063/1.2039987}}, volume = {{87}}, year = {{2005}}, } @article{7659, author = {{Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S. and Mishra, Umesh K.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{3}}, publisher = {{AIP Publishing}}, title = {{{Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN}}}, doi = {{10.1063/1.1851007}}, volume = {{86}}, year = {{2005}}, } @article{7654, author = {{Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{16}}, publisher = {{AIP Publishing}}, title = {{{Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}}}, doi = {{10.1063/1.2112192}}, volume = {{87}}, year = {{2005}}, } @article{7674, author = {{Schwenzer, Birgit and Meier, Cedrik and Masala, Ombretta and Seshadri, Ram and DenBaars, Steven P. and Mishra, Umesh K.}}, issn = {{0959-9428}}, journal = {{Journal of Materials Chemistry}}, number = {{19}}, publisher = {{Royal Society of Chemistry (RSC)}}, title = {{{Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor}}}, doi = {{10.1039/b418203k}}, volume = {{15}}, year = {{2005}}, } @article{7656, author = {{Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura, S.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{5}}, publisher = {{AIP Publishing}}, title = {{{Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching}}}, doi = {{10.1063/1.2008380}}, volume = {{87}}, year = {{2005}}, } @article{7646, author = {{Regolin, I. and Sudfeld, D. and Lüttjohann, S. and Khorenko, V. and Prost, W. and Kästner, J. and Dumpich, G. and Meier, Cedrik and Lorke, A. and Tegude, F.-J.}}, issn = {{0022-0248}}, journal = {{Journal of Crystal Growth}}, pages = {{607--611}}, publisher = {{Elsevier BV}}, title = {{{Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs}}}, doi = {{10.1016/j.jcrysgro.2006.10.122}}, volume = {{298}}, year = {{2006}}, } @article{7647, author = {{Russ, M. and Meier, Cedrik and Marquardt, B. and Lorke, A. and Reuter, D. and Wieck, A. D.}}, issn = {{0141-1594}}, journal = {{Phase Transitions}}, number = {{9-10}}, pages = {{765--770}}, publisher = {{Informa UK Limited}}, title = {{{Quantum dot electrons as controllable scattering centers in the vicinity of a two-dimensional electron gas}}}, doi = {{10.1080/01411590600960893}}, volume = {{79}}, year = {{2006}}, } @article{7649, author = {{Nienhaus, H. and Kravets, V. and Koutouzov, S. and Meier, Cedrik and Lorke, A. and Wiggers, H. and Kennedy, M. K. and Kruis, F. E.}}, issn = {{1071-1023}}, journal = {{Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures}}, number = {{3}}, publisher = {{American Vacuum Society}}, title = {{{Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles}}}, doi = {{10.1116/1.2190658}}, volume = {{24}}, year = {{2006}}, } @article{7650, author = {{Meier, Cedrik and Lüttjohann, Stephan and Kravets, Vasyl G. and Nienhaus, Hermann and Lorke, Axel and Wiggers, Hartmut}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, number = {{1-2}}, pages = {{155--158}}, publisher = {{Elsevier BV}}, title = {{{Raman properties of silicon nanoparticles}}}, doi = {{10.1016/j.physe.2005.12.030}}, volume = {{32}}, year = {{2006}}, } @article{7648, author = {{Meier, Cedrik and Lüttjohann, Stephan and Kravets, Vasyl G. and Nienhaus, Hermann and Lorke, Axel and Ifeacho, Pascal and Wiggers, Hartmut and Schulz, Christof and Kennedy, Marcus K. and Kruis, F. Einar}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{11}}, publisher = {{AIP Publishing}}, title = {{{Vibrational and defect states in SnOx nanoparticles}}}, doi = {{10.1063/1.2203408}}, volume = {{99}}, year = {{2006}}, } @article{7651, author = {{Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{3}}, publisher = {{AIP Publishing}}, title = {{{Visible resonant modes in GaN-based photonic crystal membrane cavities}}}, doi = {{10.1063/1.2166680}}, volume = {{88}}, year = {{2006}}, } @article{7641, author = {{Marquardt, Bastian and Russ, Marco and Lorke, Axel and Meier, Cedrik and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, number = {{6}}, pages = {{2075--2077}}, publisher = {{Elsevier BV}}, title = {{{Quantum dots as tunable scatterers for 2D- and 1D-electron systems}}}, doi = {{10.1016/j.physe.2007.09.198}}, volume = {{40}}, year = {{2007}}, } @article{7643, author = {{Meier, Cedrik and Gondorf, Andreas and Lüttjohann, Stephan and Lorke, Axel and Wiggers, Hartmut}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap}}}, doi = {{10.1063/1.2720095}}, volume = {{101}}, year = {{2007}}, } @article{7644, author = {{Meier, Cedrik and Hennessy, Kevin}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{14}}, publisher = {{AIP Publishing}}, title = {{{Technique for tilting GaAs photonic crystal nanocavities out of plane}}}, doi = {{10.1063/1.2719612}}, volume = {{90}}, year = {{2007}}, } @article{7645, author = {{Lüttjohann, S and Meier, Cedrik and Offer, M and Lorke, A and Wiggers, H}}, issn = {{0295-5075}}, journal = {{Europhysics Letters (EPL)}}, number = {{3}}, publisher = {{IOP Publishing}}, title = {{{Temperature-induced crossover between bright and dark exciton emission in silicon nanoparticles}}}, doi = {{10.1209/0295-5075/79/37002}}, volume = {{79}}, year = {{2007}}, } @article{7640, author = {{Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{19}}, publisher = {{AIP Publishing}}, title = {{{Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}}}, doi = {{10.1063/1.2920439}}, volume = {{92}}, year = {{2008}}, } @inbook{7500, author = {{Meier, Cedrik and Lüttjohann, Stephan and Offer, Matthias and Wiggers, Hartmut and Lorke, Axel}}, booktitle = {{Advances in Solid State Physics}}, isbn = {{9783540858584}}, issn = {{1438-4329}}, pages = {{79--90}}, publisher = {{Springer Berlin Heidelberg}}, title = {{{Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength}}}, doi = {{10.1007/978-3-540-85859-1_7}}, year = {{2008}}, } @inproceedings{7642, author = {{Piegdon, Karoline A. and Matthias, Heinrich and Meier, Cedrik and Kitzerow, Heinz-Siegfried}}, booktitle = {{Emerging Liquid Crystal Technologies III}}, editor = {{Chien, Liang-Chy}}, publisher = {{SPIE}}, title = {{{Tunable optical properties of photonic crystals and semiconductor microdisks using liquid crystals}}}, doi = {{10.1117/12.774194}}, year = {{2008}}, } @inproceedings{4179, abstract = {{We numerically investigate Whispering Gallery Modes (WGM) in a subwavelength microdisk resonator [1] embedded in an uniaxial anisotropic liquid crystal environment. It is shown that the WGMs have anticrossing behavior when modes of different radial mode order M or azimuthal order N approach each other spectrally. }}, author = {{Förstner, Jens and Declair, S. and Meier, Cedrik and Meier, Torsten}}, booktitle = {{Theoretical and Computational Nanophotonics Tacona-Photonics}}, keywords = {{tet_topic_microdisk}}, location = {{Tacona}}, number = {{1}}, pages = {{60--62}}, title = {{{Anticrossing of Whispering Gallery Modes in Microdisk Resonators Embedded in a Liquid Crystal}}}, doi = {{10.1063/1.3253921}}, volume = {{1176}}, year = {{2009}}, } @inproceedings{4181, abstract = {{We experimentally and theoretically investigate microdisk resonators with embedded quantum dots immersed in a liquid crystal in its nematic phase, showing the tunabililty of the photonic modes via external parameters like temperature or electric field.}}, author = {{Förstner, Jens and Meier, Cedrik and Piegdon, Karoline and Declair, Stefan and Hoischen, Andreas and Urbanski, Mark and Meier, Torsten and Kitzerow, Heinz-Siegfried}}, booktitle = {{Advances in Optical Sciences Congress}}, isbn = {{9781557528735}}, keywords = {{tet_topic_microdisk}}, location = {{Honolulu, Hawaii United States}}, publisher = {{OSA Technical Digest (CD) (Optical Society of America, 2009), paper NTuC2}}, title = {{{Coupling Dynamics of Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator}}}, doi = {{10.1364/nlo.2009.ntuc2}}, year = {{2009}}, } @article{7498, author = {{Lei, Wen and Notthoff, Christian and Offer, Matthias and Meier, Cedrik and Lorke, Axel and Jagadish, Chennupati and Wieck, Andreas D.}}, issn = {{0884-2914}}, journal = {{Journal of Materials Research}}, number = {{07}}, pages = {{2179--2184}}, publisher = {{Cambridge University Press (CUP)}}, title = {{{Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation}}}, doi = {{10.1557/jmr.2009.0293}}, volume = {{24}}, year = {{2009}}, } @article{7497, author = {{Mehta, M. and Ruth, M. and Piegdon, K. A. and Krix, D. and Nienhaus, H. and Meier, Cedrik}}, issn = {{1071-1023}}, journal = {{Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures}}, number = {{5}}, publisher = {{American Vacuum Society}}, title = {{{Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films}}}, doi = {{10.1116/1.3186528}}, volume = {{27}}, year = {{2009}}, } @article{7499, author = {{Huba, K. and Krix, D. and Meier, Cedrik and Nienhaus, H.}}, issn = {{0734-2101}}, journal = {{Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}}, number = {{4}}, pages = {{889--894}}, publisher = {{American Vacuum Society}}, title = {{{Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers}}}, doi = {{10.1116/1.3100218}}, volume = {{27}}, year = {{2009}}, } @article{4550, abstract = {{We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.}}, author = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{14}}, publisher = {{AIP Publishing}}, title = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}}, doi = {{10.1063/1.3488812}}, volume = {{97}}, year = {{2010}}, } @article{4125, abstract = {{We numerically investigate the behavior of Whispering Gallery Modes (WGMs) in circularly shaped resonators like microdisks, with diameters in the range of optical vacuum wavelengths. The microdisk is embedded in an uniaxial anisotropic dielectric environment. By changing the optical anisotropy, one obtains spectral tunability of the optical modes. The degree of tunability strongly depends on the radial (azimuthal) mode order M (N). As the modes approach each other spectrally, anticrossing is observed, leading to a rearrangement of the optical states.}}, author = {{Declair, S. and Meier, Cedrik and Meier, Torsten and Förstner, Jens}}, issn = {{1569-4410}}, journal = {{Photonics and Nanostructures - Fundamentals and Applications}}, keywords = {{tet_topic_microdisk}}, number = {{4}}, pages = {{273--277}}, publisher = {{Elsevier BV}}, title = {{{Anticrossing of Whispering Gallery Modes in microdisk resonators embedded in an anisotropic environment}}}, doi = {{10.1016/j.photonics.2010.03.002}}, volume = {{8}}, year = {{2010}}, } @article{7494, author = {{Mehta, M. and Meier, Cedrik}}, issn = {{0013-4651}}, journal = {{Journal of The Electrochemical Society}}, number = {{2}}, publisher = {{The Electrochemical Society}}, title = {{{Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals}}}, doi = {{10.1149/1.3519999}}, volume = {{158}}, year = {{2010}}, } @article{7496, author = {{Theis, Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas and Meier, Cedrik}}, issn = {{0957-4484}}, journal = {{Nanotechnology}}, number = {{45}}, publisher = {{IOP Publishing}}, title = {{{Electroluminescence from silicon nanoparticles fabricated from the gas phase}}}, doi = {{10.1088/0957-4484/21/45/455201}}, volume = {{21}}, year = {{2010}}, } @article{4551, abstract = {{An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.}}, author = {{Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{Molecular beam epitaxy, Focused ion beam, Self-assembled quantum dot, Electroluminescence}}, number = {{10}}, pages = {{2749--2752}}, publisher = {{Elsevier BV}}, title = {{{Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}}}, doi = {{10.1016/j.physe.2009.12.053}}, volume = {{42}}, year = {{2010}}, } @article{4123, abstract = {{GaAs-based semiconductor microdisks with high quality whispering gallery modes (Q44000) have been fabricated.A layer of self-organized InAs quantumdots (QDs) served as a light source to feed the optical modes at room temperature. In order to achieve frequency tuning of the optical modes, the microdisk devices have been immersed in 4 – cyano – 4´-pentylbiphenyl (5CB), a liquid crystal(LC) with a nematic phase below the clearing temperature of TC≈34°C .We have studied the device performance in the temperature rangeof T=20-50°C, in order to investigate the influence of the nematic–isotropic phase transition on the optical modes. Moreover,we havea pplied an AC electric field to the device,which leads in the nematic phase to a reorientation of the anisotropic dielectric tensor of the liquid crystal.This electrical anisotropy can be used to achieve electrical tunability of the optical modes.Using the finite-difference time domain (FDTD) technique with an anisotropic material model, we are able to describe the influence of the liquid crystal qualitatively.}}, author = {{Piegdon, Karoline A. and Offer, Matthias and Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and Wieck, Andreas D. and Meier, Cedrik}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{tet_topic_qd, tet_topic_microdisk}}, number = {{10}}, pages = {{2552--2555}}, publisher = {{Elsevier BV}}, title = {{{Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator}}}, doi = {{10.1016/j.physe.2009.12.051}}, volume = {{42}}, year = {{2010}}, } @article{4172, abstract = {{Microdisks made from GaAs with embedded InAs quantum dots are immersed in the liquid crystal 4-cyano-4’-pentylbiphenyl (5CB). The quantum dots serve as emitters feeding the optical modes of the photonic cavity. By changing temperature, the liquid crystal undergoes a phase transition from the isotropic to the nematic state, which can be used as an effective tuning mechanism of the photonic modes of the cavity. In the nematic state, the uniaxial electrical anisotropy of the liquid crystal molecules can be exploited for orienting the material in an electric field, thus externally controlling the birefringence of the material. Using this effect, an electric field induced tuning of the modes is achieved. Numerical simulations using the finite-differences time-domain (FDTD) technique employing an anisotropic dielectric medium allow to understand the alignment of the liquid crystal molecules on the surface of the microdisk resonator.}}, author = {{Piegdon, Karoline A. and Declair, Stefan and Förstner, Jens and Meier, Torsten and Matthias, Heiner and Urbanski, Martin and Kitzerow, Heinz-Siegfried and Reuter, Dirk and Wieck, Andreas D. and Lorke, Axel and Meier, Cedrik}}, issn = {{1094-4087}}, journal = {{Optics Express}}, keywords = {{tet_topic_qd, tet_topic_microdisk}}, number = {{8}}, publisher = {{The Optical Society}}, title = {{{Tuning quantum-dot based photonic devices with liquid crystals}}}, doi = {{10.1364/oe.18.007946}}, volume = {{18}}, year = {{2010}}, } @article{4378, abstract = {{Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed.}}, author = {{Mehta, Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Zrenner, Artur and Meier, Cedrik}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, keywords = {{molecular beam epitaxy, quantum dot, site control, electroluminescence}}, number = {{4}}, pages = {{1182--1185}}, publisher = {{Wiley}}, title = {{{Electrically driven intentionally positioned single quantum dot}}}, doi = {{10.1002/pssc.201000828}}, volume = {{8}}, year = {{2011}}, } @article{7495, author = {{Urbanski, Martin and Piegdon, Karoline A. and Meier, Cedrik and Kitzerow, Heinz-Siegfried}}, issn = {{0267-8292}}, journal = {{Liquid Crystals}}, number = {{4}}, pages = {{475--482}}, publisher = {{Informa UK Limited}}, title = {{{Investigations on the director field around microdisc resonators}}}, doi = {{10.1080/02678292.2011.552742}}, volume = {{38}}, year = {{2011}}, } @article{7493, author = {{Piegdon, K. A. and Lexow, M. and Grundmeier, G. and Kitzerow, Heinz-Siegfried and Pärschke, K. and Mergel, D. and Reuter, Dirk and Wieck, A. D. and Meier, Cedrik}}, issn = {{1094-4087}}, journal = {{Optics Express}}, number = {{6}}, publisher = {{The Optical Society}}, title = {{{All-optical tunability of microdisk lasers via photo-adressable polyelectrolyte functionalization}}}, doi = {{10.1364/oe.20.006060}}, volume = {{20}}, year = {{2012}}, } @article{7491, author = {{Kröger, Philipp and Ruth, Marcel and Weber, Nils and Meier, Cedrik}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{26}}, publisher = {{AIP Publishing}}, title = {{{Carrier localization in ZnO quantum wires}}}, doi = {{10.1063/1.4731767}}, volume = {{100}}, year = {{2012}}, } @article{7492, author = {{Kampmeier, J. and Rashad, M. and Woggon, U. and Ruth, M. and Meier, Cedrik and Schikora, D. and Lischka, K. and Pawlis, A.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{15}}, publisher = {{American Physical Society (APS)}}, title = {{{Enhanced photoluminescence of colloidal nanocrystals embedded in epitaxially grown semiconductor microstructures}}}, doi = {{10.1103/physrevb.85.155405}}, volume = {{85}}, year = {{2012}}, } @article{4131, abstract = {{We report an anisotropic formation of defects in cubic GaN grown on nano-patterned 3C-SiC/Si (001) by molecular beam epitaxy. Nano-patterning of 3C-SiC/Si (001) is achieved by nanosphere lithography and a reactive ion etching process. Atomic force microscopy and scanning electron microscopy show that the selectivearea- grown cubic GaN nucleates in two structurally different domains, which most probably originate from the substrate. In adjacent domains the formation of defects, especially hexagonal inclusions, is different and leads to two different surface morphologies. The dominant phase within these domains was measured by electron backscatter diffraction. Optical properties were investigated by micro-photoluminescence and cathodoluminescence spectroscopy.}}, author = {{Kemper, R. M. and Häberlen, M. and Schupp, T. and Weinl, M. and Bürger, M. and Ruth, M. and Meier, Cedrik and Niendorf, T. and Maier, H. J. and Lischka, K. and As, D. J. and Lindner, Jörg}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, number = {{3-4}}, pages = {{1028--1031}}, publisher = {{Wiley}}, title = {{{Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)}}}, doi = {{10.1002/pssc.201100174}}, volume = {{9}}, year = {{2012}}, } @article{7490, author = {{Ruth, Marcel and Meier, Cedrik}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{22}}, publisher = {{American Physical Society (APS)}}, title = {{{Scaling coefficient for three-dimensional grain coalescence of ZnO on Si(111)}}}, doi = {{10.1103/physrevb.86.224108}}, volume = {{86}}, year = {{2012}}, } @article{1705, author = {{Ruth, Marcel and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{1094-4087}}, journal = {{Optics Express}}, number = {{21}}, publisher = {{The Optical Society}}, title = {{{Blue-green emitting microdisks using low-temperature-grown ZnO on patterned silicon substrates}}}, doi = {{10.1364/oe.21.025517}}, volume = {{21}}, year = {{2013}}, } @article{3959, abstract = {{Microresonators containing quantum dots find application in devices like single photon emitters for quantum information technology as well as low threshold laser devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks including cubic GaN quantum dots using dry chemical etching techniques. Scanning electron microscopy analysis reveals the morphology with smooth surfaces of the microdisks. Micro-photoluminescence measurements exhibit optically active quantum dots. Furthermore this is the first report of resonator modes in the emission spectrum of a cubic AlN microdisk.}}, author = {{Bürger, M. and Kemper, R.M. and Bader, C.A. and Ruth, M. and Declair, S. and Meier, Cedrik and Förstner, Jens and As, D.J.}}, issn = {{0022-0248}}, journal = {{Journal of Crystal Growth}}, keywords = {{tet_topic_qd, tet_topic_microdisk}}, pages = {{287--290}}, publisher = {{Elsevier BV}}, title = {{{Cubic GaN quantum dots embedded in zinc-blende AlN microdisks}}}, doi = {{10.1016/j.jcrysgro.2012.12.058}}, volume = {{378}}, year = {{2013}}, } @article{7488, author = {{Ruth, Marcel and Meier, Cedrik}}, issn = {{2158-3226}}, journal = {{AIP Advances}}, number = {{7}}, publisher = {{AIP Publishing}}, title = {{{Structural enhancement of ZnO on SiO2 for photonic applications}}}, doi = {{10.1063/1.4815974}}, volume = {{3}}, year = {{2013}}, } @article{3963, abstract = {{Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding microdisks were patterned by means of electron beam lithography and a two step reactive ion etching process. Micro-photoluminescence spectroscopy investigations were performed for optical characterization. We analyzed the mode spacing for disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional finite difference time domain calculations were in good agreement with the experimental data. Whispering gallery modes of the radial orders 1 and 2 were identified by means of simulated mode field distributions.}}, author = {{Bürger, M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat Josef}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{tet_topic_qd, tet_topic_microdisk}}, number = {{8}}, pages = {{081105}}, publisher = {{AIP Publishing}}, title = {{{Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots}}}, doi = {{10.1063/1.4793653}}, volume = {{102}}, year = {{2013}}, } @article{7485, author = {{Wiebeler, Christian and Bader, Christina A. and Meier, Cedrik and Schumacher, Stefan}}, issn = {{1463-9076}}, journal = {{Phys. Chem. Chem. Phys.}}, number = {{28}}, pages = {{14531--14538}}, publisher = {{Royal Society of Chemistry (RSC)}}, title = {{{Optical spectrum, perceived color, refractive index, and non-adiabatic dynamics of the photochromic diarylethene CMTE}}}, doi = {{10.1039/c3cp55490b}}, volume = {{16}}, year = {{2014}}, } @article{1696, author = {{Bader, Christina A. and Zeuner, Franziska and Bader, Manuel H. W. and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{21}}, publisher = {{AIP Publishing}}, title = {{{Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators}}}, doi = {{10.1063/1.4936768}}, volume = {{118}}, year = {{2015}}, } @article{3888, abstract = {{We successfully developed a process to fabricate freestanding cubic aluminium nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots (QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE). To realize the photonic crystal (PhC) membrane we have chosen a triangular array of holes. The array was fabricated by electron beam lithography and several steps of reactive ion etching (RIE) with the help of a hard mask and an undercut of the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL) measurements of the photonic crystals, in particular of a H1 and a L3 cavity, and the emission of the QD ensemble were performed to characterize the samples. The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000 for two different modes of the L3 cavity, respectively. The energy of the fundamental modes is in good agreement to the numerical simulations. }}, author = {{Blumenthal, Sarah and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils and Meier, Cedrik and Reuter, Dirk and As, Donat J.}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, keywords = {{tet_topic_phc, tet_topic_qd}}, number = {{5-6}}, pages = {{292--296}}, publisher = {{Wiley}}, title = {{{Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots}}}, doi = {{10.1002/pssc.201600010}}, volume = {{13}}, year = {{2016}}, } @article{7484, author = {{Hoffmann, Sandro Phil and Albert, Maximilian and Meier, Cedrik}}, issn = {{0749-6036}}, journal = {{Superlattices and Microstructures}}, pages = {{397--408}}, publisher = {{Elsevier BV}}, title = {{{Fabrication of fully undercut ZnO-based photonic crystal membranes with 3D optical confinement}}}, doi = {{10.1016/j.spmi.2016.07.006}}, volume = {{97}}, year = {{2016}}, } @article{682, author = {{Weber, Nils and Protte, Maximilian and Walter, Felicitas and Georgi, Philip and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{2469-9950}}, journal = {{Physical Review B}}, number = {{20}}, publisher = {{American Physical Society (APS)}}, title = {{{Double resonant plasmonic nanoantennas for efficient second harmonic generation in zinc oxide}}}, doi = {{10.1103/physrevb.95.205307}}, volume = {{95}}, year = {{2017}}, } @inproceedings{3988, author = {{Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk and Weber, N. and Meier, Cedrik and Schierholz, R. and Lindner, Jörg}}, location = {{Straßburg (France)}}, title = {{{Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs}}}, year = {{2017}}, } @article{7480, author = {{Poltavtsev, S. V. and Kosarev, A. N. and Akimov, I. A. and Yakovlev, D. R. and Sadofev, S. and Puls, J. and Hoffmann, S. P. and Albert, M. and Meier, Cedrik and Meier, Torsten and Bayer, M.}}, issn = {{2469-9950}}, journal = {{Physical Review B}}, number = {{3}}, publisher = {{American Physical Society (APS)}}, title = {{{Time-resolved photon echoes from donor-bound excitons in ZnO epitaxial layers}}}, doi = {{10.1103/physrevb.96.035203}}, volume = {{96}}, year = {{2017}}, } @article{684, author = {{Walter, Felicitas and Li, Guixin and Meier, Cedrik and Zhang, Shuang and Zentgraf, Thomas}}, issn = {{1530-6984}}, journal = {{Nano Letters}}, number = {{5}}, pages = {{3171--3175}}, publisher = {{American Chemical Society (ACS)}}, title = {{{Ultrathin Nonlinear Metasurface for Optical Image Encoding}}}, doi = {{10.1021/acs.nanolett.7b00676}}, volume = {{17}}, year = {{2017}}, } @article{7481, abstract = {{The electronic band structures of hexagonal ZnO and cubic ZnS, ZnSe, and ZnTe compounds are determined within hybrid-density-functional theory and quasiparticle calculations. It is found that the band-edge energies calculated on the G0W0 (Zn chalcogenides) or GW (ZnO) level of theory agree well with experiment, while fully self-consistent QSGW calculations are required for the correct description of the Zn 3d bands. The quasiparticle band structures are used to calculate the linear response and second-harmonic-generation (SHG) spectra of the Zn–VI compounds. Excitonic effects in the optical absorption are accounted for within the Bethe–Salpeter approach. The calculated spectra are discussed in the context of previous experimental data and present SHG measurements for ZnO.}}, author = {{Riefer, Arthur and Weber, Nils and Mund, Johannes and Yakovlev, Dmitri R. and Bayer, Manfred and Schindlmayr, Arno and Meier, Cedrik and Schmidt, Wolf Gero}}, issn = {{1361-648X}}, journal = {{Journal of Physics: Condensed Matter}}, number = {{21}}, publisher = {{IOP Publishing}}, title = {{{Zn–VI quasiparticle gaps and optical spectra from many-body calculations}}}, doi = {{10.1088/1361-648x/aa6b2a}}, volume = {{29}}, year = {{2017}}, } @article{1327, author = {{Weber, N. and Hoffmann, S. P. and Albert, M. and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Efficient frequency conversion by combined photonic–plasmonic mode coupling}}}, doi = {{10.1063/1.5017010}}, volume = {{123}}, year = {{2018}}, } @article{1430, author = {{Hoffmann, Sandro P. and Albert, Maximilian and Weber, Nils and Sievers, Denis and Förstner, Jens and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{2330-4022}}, journal = {{ACS Photonics}}, keywords = {{tet_topic_phc}}, pages = {{1933--1942}}, publisher = {{American Chemical Society (ACS)}}, title = {{{Tailored UV Emission by Nonlinear IR Excitation from ZnO Photonic Crystal Nanocavities}}}, doi = {{10.1021/acsphotonics.7b01228}}, volume = {{5}}, year = {{2018}}, } @article{12930, author = {{Köthemann, Ronja and Weber, Nils and Lindner, Jörg K N and Meier, Cedrik}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{9}}, title = {{{High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy}}}, doi = {{10.1088/1361-6641/ab3536}}, volume = {{34}}, year = {{2019}}, } @article{8797, abstract = {{Free from phase-matching constraints, plasmonic metasurfaces have contributed significantly to the control of optical nonlinearity and enhancement of nonlinear generation efficiency by engineering subwavelength meta-atoms. However, high dissipative losses and inevitable thermal heating limit their applicability in nonlinear nanophotonics. All-dielectric metasurfaces, supporting both electric and magnetic Mie-type resonances in their nanostructures, have appeared as a promising alternative to nonlinear plasmonics. High-index dielectric nanostructures, allowing additional magnetic resonances, can induce magnetic nonlinear effects, which, along with electric nonlinearities, increase the nonlinear conversion efficiency. In addition, low dissipative losses and high damage thresholds provide an extra degree of freedom for operating at high pump intensities, resulting in a considerable enhancement of the nonlinear processes. We discuss the current state of the art in the intensely developing area of all-dielectric nonlinear nanostructures and metasurfaces, including the role of Mie modes, Fano resonances, and anapole moments for harmonic generation, wave mixing, and ultrafast optical switching. Furthermore, we review the recent progress in the nonlinear phase and wavefront control using all-dielectric metasurfaces. We discuss techniques to realize all-dielectric metasurfaces for multifunctional applications and generation of second-order nonlinear processes from complementary metal–oxide–semiconductor-compatible materials.}}, author = {{Sain, Basudeb and Meier, Cedrik and Zentgraf, Thomas}}, issn = {{2577-5421}}, journal = {{Advanced Photonics}}, number = {{2}}, pages = {{024002}}, title = {{{Nonlinear optics in all-dielectric nanoantennas and metasurfaces: a review}}}, doi = {{10.1117/1.ap.1.2.024002}}, volume = {{1}}, year = {{2019}}, } @article{14544, author = {{Vondran, J. and Spitzer, F. and Bayer, M. and Akimov, I. A. and Trautmann, Alexander and Reichelt, Matthias and Meier, Cedrik and Weber, N. and Meier, Torsten and André, R. and Mariette, H.}}, issn = {{2469-9950}}, journal = {{Physical Review B}}, number = {{15}}, pages = {{155308}}, title = {{{Spatially asymmetric transients of propagating exciton-polariton modes in a planar CdZnTe/CdMgTe guiding structure}}}, doi = {{10.1103/physrevb.100.155308}}, volume = {{100}}, year = {{2019}}, } @article{22887, author = {{Vondran, J. and Spitzer, F. and Bayer, M. and Akimov, I. A. and Trautmann, Alexander and Reichelt, Matthias and Meier, Cedrik and Weber, N. and Meier, Torsten and André, R. and Mariette, H.}}, issn = {{2469-9950}}, journal = {{Physical Review B}}, number = {{15}}, pages = {{155308}}, title = {{{Spatially asymmetric transients of propagating exciton-polariton modes in a planar CdZnTe/CdMgTe guiding structure}}}, doi = {{10.1103/physrevb.100.155308}}, volume = {{100}}, year = {{2019}}, } @article{9897, author = {{Protte, Maximilian and Weber, Nils and Golla, Christian and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, title = {{{Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas}}}, doi = {{10.1063/1.5093257}}, volume = {{125}}, year = {{2019}}, } @article{9698, author = {{Golla, C. and Weber, N. and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{7}}, title = {{{Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion}}}, doi = {{10.1063/1.5082720}}, volume = {{125}}, year = {{2019}}, } @article{20644, abstract = {{Plasmonic nanoantennas for visible and infrared radiation strongly improve the interaction of light with the matter on the nanoscale due to their strong near-field enhancement. In this study, we investigate a double-resonant plasmonic nanoantenna, which makes use of plasmonic field enhancement, enhanced outcoupling of second harmonic light, and resonant lattice effects. Using this design, we demonstrate how the efficiency of second harmonic generation can be increased significantly by fully embedding the nanoantennas into nonlinear dielectric material ZnO, instead of placing them on the surface. Investigating two different processes, we found that the best fabrication route is embedding the gold nanoantennas in ZnO using an MBE overgrowth process where a thin ZnO layer was deposited on nanoantennas fabricated on a ZnO substrate. In addition, second harmonic generation measurements show that the embedding leads to an enhancement compared to the emission of nanoantennas placed on the ZnO substrate surface. These promising results facilitate further research to determine the influence of the periodicity of the nanoantenna arrangement of the resulting SHG signal.}}, author = {{Volmert, Ruth and Weber, Nils and Meier, Cedrik}}, issn = {{1089-7550}}, journal = {{Journal of Applied Physics}}, number = {{4}}, title = {{{Nanoantennas embedded in zinc oxide for second harmonic generation enhancement}}}, doi = {{10.1063/5.0012813}}, volume = {{128}}, year = {{2020}}, } @article{16197, abstract = {{Nonlinear Pancharatnam–Berry phase metasurfaces facilitate the nontrivial phase modulation for frequency conversion processes by leveraging photon‐spin dependent nonlinear geometric‐phases. However, plasmonic metasurfaces show some severe limitation for nonlinear frequency conversion due to the intrinsic high ohmic loss and low damage threshold of plasmonic nanostructures. Here, the nonlinear geometric‐phases associated with the third‐harmonic generation process occurring in all‐dielectric metasurfaces is studied systematically, which are composed of silicon nanofins with different in‐plane rotational symmetries. It is found that the wave coupling among different field components of the resonant fundamental field gives rise to the appearance of different nonlinear geometric‐phases of the generated third‐harmonic signals. The experimental observations of the nonlinear beam steering and nonlinear holography realized in this work by all‐dielectric geometric‐phase metasurfaces are well explained with the developed theory. This work offers a new physical picture to understand the nonlinear optical process occurring at nanoscale dielectric resonators and will help in the design of nonlinear metasurfaces with tailored phase properties.}}, author = {{Liu, Bingyi and Sain, Basudeb and Reineke, Bernhard and Zhao, Ruizhe and Meier, Cedrik and Huang, Lingling and Jiang, Yongyuan and Zentgraf, Thomas}}, issn = {{2195-1071}}, journal = {{Advanced Optical Materials}}, number = {{9}}, publisher = {{Wiley}}, title = {{{Nonlinear Wavefront Control by Geometric-Phase Dielectric Metasurfaces: Influence of Mode Field and Rotational Symmetry}}}, doi = {{10.1002/adom.201902050}}, volume = {{8}}, year = {{2020}}, } @inproceedings{21719, abstract = {{We fabricate silicon tapers to increase the mode overlap of superconducting detectors on Ti:LiNbO3 waveguides. Mode images show a reduction in mode size from 6 µm to 2 µm FWHM, agreeing with beam propagation simulations.}}, author = {{Protte, Maximilian and Ebers, Lena and Hammer, Manfred and Höpker, Jan Philipp and Albert, Maximilian and Quiring, Viktor and Meier, Cedrik and Förstner, Jens and Silberhorn, Christine and Bartley, Tim}}, booktitle = {{OSA Quantum 2.0 Conference}}, isbn = {{9781943580811}}, keywords = {{tet_topic_waveguide}}, title = {{{Towards Semiconductor-Superconductor-Crystal Hybrid Integration for Quantum Photonics}}}, doi = {{10.1364/quantum.2020.qth7a.8}}, year = {{2020}}, } @article{20900, author = {{Albert, M. and Golla, C. and Meier, Cedrik}}, issn = {{0022-0248}}, journal = {{Journal of Crystal Growth}}, title = {{{Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy}}}, doi = {{10.1016/j.jcrysgro.2020.126009}}, volume = {{557}}, year = {{2021}}, } @article{23815, abstract = {{In this paper, silicon oxynitride films (SiON) grown by plasma-enhanced chemical vapor deposition are investigated. As precursor gases silane (SiH4), nitrous oxide (N2O), nitrogen (N2) and ammonia (NH3) are used with different compositions. We find that for achieving high nitrogen content adding ammonia to the precursor mix is most efficient. Moreover, we investigate the balance between adsorption and desorption processes during film growth by investigating the film growth rate as a function of the substrate temperature. From these data we are able to determine an effective activation energy for the film growth, corresponding to the difference between adsorption and desorption energy. Finally, we have thoroughly investigated the optical properties of the films using spectroscopic ellipsometry. From these measurements, we suggest a parametrized model for the refractive index and extinction coefficient in a wide range of compositions based on a Cauchy- and a Lorentz-fit.}}, author = {{Aschwanden, R. and Köthemann, R. and Albert, M. and Golla, C. and Meier, Cedrik}}, issn = {{0040-6090}}, journal = {{Thin Solid Films}}, title = {{{Optical properties of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition}}}, doi = {{10.1016/j.tsf.2021.138887}}, volume = {{736}}, year = {{2021}}, } @article{22214, author = {{Mund, Johannes and Yakovlev, Dmitri R. and Sadofev, Sergey and Meier, Cedrik and Bayer, Manfred}}, issn = {{2469-9950}}, journal = {{Physical Review B}}, title = {{{Second harmonic generation on excitons in ZnO/(Zn,Mg)O quantum wells with built-in electric fields}}}, doi = {{10.1103/physrevb.103.195311}}, volume = {{103}}, year = {{2021}}, } @article{20592, abstract = {{GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off using selective etching of Al-containing layers and subsequent transfer to glass substrates. Herein, the selective etching of (111)B-oriented AlxGa1−xAs sacrificial layers (10–50 nm thick) with different aluminum concentrations (x = 0.5–1.0) in 10\% hydrofluoric acid is investigated and compared with standard (100)-oriented structures. The thinner the sacrificial layer and the lower the aluminum content, the lower the lateral etch rate. For both orientations, the lateral etch rates are in the same order of magnitude, but some quantitative differences exist. Furthermore, the epitaxial lift-off, the transfer, and the nanopatterning of thin (111)B-oriented GaAs membranes are demonstrated. Atomic force microscopy and high-resolution X-ray diffraction measurements reveal the high structural quality of the transferred GaAs-(111) films.}}, author = {{Henksmeier, Tobias and Eppinger, Martin and Reineke, Bernhard and Zentgraf, Thomas and Meier, Cedrik and Reuter, Dirk}}, journal = {{physica status solidi (a)}}, keywords = {{epitaxial lift-off, GaAs/AlxGa1−xAs heterostructures, selective etching}}, number = {{3}}, pages = {{2000408}}, title = {{{Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off}}}, doi = {{https://doi.org/10.1002/pssa.202000408}}, volume = {{218}}, year = {{2021}}, } @article{29716, author = {{Widhalm, Alex and Golla, Christian and Weber, Nils and Mackwitz, Peter and Zrenner, Artur and Meier, Cedrik}}, issn = {{1094-4087}}, journal = {{Optics Express}}, keywords = {{Atomic and Molecular Physics, and Optics}}, number = {{4}}, publisher = {{The Optical Society}}, title = {{{Electric-field-induced second harmonic generation in silicon dioxide}}}, doi = {{10.1364/oe.443489}}, volume = {{30}}, year = {{2022}}, } @article{30210, abstract = {{Lithium niobate on insulator (LNOI) has a great potential for photonic integrated circuits, providing substantial versatility in design of various integrated components. To properly use these components in the implementation of different quantum protocols, photons with different properties are required. In this paper, we theoretically demonstrate a flexible source of correlated photons built on the LNOI waveguide of a special geometry. This source is based on the parametric down-conversion (PDC) process, in which the signal and idler photons are generated at the telecom wavelength and have different spatial profiles and polarizations, but the same group velocities. Distinguishability in polarizations and spatial profiles facilitates the routing and manipulating individual photons, while the equality of their group velocities leads to the absence of temporal walk-off between photons. We show how the spectral properties of the generated photons and the number of their frequency modes can be controlled depending on the pump characteristics and the waveguide length. Finally, we discuss special regimes, in which narrowband light with strong frequency correlations and polarization-entangled Bell states are generated at the telecom wavelength.}}, author = {{Ebers, Lena and Ferreri, Alessandro and Hammer, Manfred and Albert, Maximilian and Meier, Cedrik and Förstner, Jens and Sharapova, Polina R.}}, issn = {{2515-7647}}, journal = {{Journal of Physics: Photonics}}, keywords = {{tet_topic_waveguide}}, pages = {{025001}}, publisher = {{IOP Publishing}}, title = {{{Flexible source of correlated photons based on LNOI rib waveguides}}}, doi = {{10.1088/2515-7647/ac5a5b}}, volume = {{4}}, year = {{2022}}, } @article{29790, abstract = {{The free exciton transition (near-band-edge emission, NBE) of ZnO at ≈388 nm can be strongly enhanced and even stimulated by an underlying photonic structure. 1D Photonic crystals, so-called distributed Bragg reflectors, are utilized to suppress the deep-level emission of ZnO (DLE, ≈500–530 nm). The reflector stacks are fabricated in a layer-by-layer procedure by wet-chemical synthesis. They consist of low-ε porous SiO2 layers and high-ε TiO2 layers. Varying the thickness of the SiO2 layers allows tuning the optical bandgap in a wide range between ≈420 and 800 nm. A ZnO layer is deposited on top of the reflector stacks by sol–gel synthesis. The spontaneous photoluminescence (PL) emission of the ZnO film is modulated by the photonic structure. When the optical bandgap of the reflector is in resonance with the deep-level emission of ZnO (DLE, ≈500–530 nm), then this defect-related emission mode is suppressed. Strong NBE emission is observed even when the ZnO layer does not show any NBE emission (due to low crystallinity) in the absence of the photonic structure. With this cost-efficient synthesis method, emitters for, e.g., luminescent gas sensors can be fabricated.}}, author = {{Kothe, Linda and Albert, Maximilian and Meier, Cedrik and Wagner, Thorsten and Tiemann, Michael}}, issn = {{2196-7350}}, journal = {{Advanced Materials Interfaces}}, keywords = {{Mechanical Engineering, Mechanics of Materials}}, publisher = {{Wiley}}, title = {{{Stimulation and Enhancement of Near‐Band‐Edge Emission in Zinc Oxide by Distributed Bragg Reflectors}}}, doi = {{10.1002/admi.202102357}}, year = {{2022}}, } @article{44097, abstract = {{We present strong enhancement of third harmonic generation in an amorphous silicon metasurface consisting of elliptical nano resonators. We show that this enhancement originates from a new type of multi-mode Fano mechanism. These ‘Super-Fano’ resonances are investigated numerically in great detail using full-wave simulations. The theoretically predicted behavior of the metasurface is experimentally verified by linear and nonlinear transmission spectroscopy. Moreover, quantitative nonlinear measurements are performed, in which an absolute conversion efficiency as high as ηmax ≈ 2.8 × 10−7 a peak power intensity of 1.2 GW cm−2 is found. Compared to an unpatterned silicon film of the same thickness amplification factors of up to ~900 are demonstrated. Our results pave the way to exploiting a strong Fano-type multi-mode coupling in metasurfaces for high THG in potential applications.}}, author = {{Hähnel, David and Golla, Christian and Albert, Maximilian and Zentgraf, Thomas and Myroshnychenko, Viktor and Förstner, Jens and Meier, Cedrik}}, issn = {{2047-7538}}, journal = {{Light: Science & Applications}}, keywords = {{tet_topic_meta}}, number = {{1}}, pages = {{97}}, publisher = {{Springer Nature}}, title = {{{A multi-mode super-fano mechanism for enhanced third harmonic generation in silicon metasurfaces}}}, doi = {{https://doi.org/10.1038/s41377-023-01134-1}}, volume = {{12}}, year = {{2023}}, }