---
_id: '7694'
author:
- first_name: Ralf D.
full_name: Tscheuschner, Ralf D.
last_name: Tscheuschner
- first_name: Sascha
full_name: Hoch, Sascha
last_name: Hoch
- first_name: Eva
full_name: Leschinsky, Eva
last_name: Leschinsky
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Sabine
full_name: Theis, Sabine
last_name: Theis
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Tscheuschner RD, Hoch S, Leschinsky E, Meier C, Theis S, Wieck AD. Robustness
of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control
Management of III–V Molecular Beam Epitaxy. International Journal of Modern
Physics B. 1998;12(11):1147-1170. doi:10.1142/s0217979298000636
apa: Tscheuschner, R. D., Hoch, S., Leschinsky, E., Meier, C., Theis, S., &
Wieck, A. D. (1998). Robustness of the Quantum Hall Effect, Sample Size Versus
Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy.
International Journal of Modern Physics B, 12(11), 1147–1170. https://doi.org/10.1142/s0217979298000636
bibtex: '@article{Tscheuschner_Hoch_Leschinsky_Meier_Theis_Wieck_1998, title={Robustness
of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control
Management of III–V Molecular Beam Epitaxy}, volume={12}, DOI={10.1142/s0217979298000636},
number={11}, journal={International Journal of Modern Physics B}, publisher={World
Scientific Pub Co Pte Lt}, author={Tscheuschner, Ralf D. and Hoch, Sascha and
Leschinsky, Eva and Meier, Cedrik and Theis, Sabine and Wieck, Andreas D.}, year={1998},
pages={1147–1170} }'
chicago: 'Tscheuschner, Ralf D., Sascha Hoch, Eva Leschinsky, Cedrik Meier, Sabine
Theis, and Andreas D. Wieck. “Robustness of the Quantum Hall Effect, Sample Size
Versus Sample Topology, and Quality Control Management of III–V Molecular Beam
Epitaxy.” International Journal of Modern Physics B 12, no. 11 (1998):
1147–70. https://doi.org/10.1142/s0217979298000636.'
ieee: R. D. Tscheuschner, S. Hoch, E. Leschinsky, C. Meier, S. Theis, and A. D.
Wieck, “Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology,
and Quality Control Management of III–V Molecular Beam Epitaxy,” International
Journal of Modern Physics B, vol. 12, no. 11, pp. 1147–1170, 1998.
mla: Tscheuschner, Ralf D., et al. “Robustness of the Quantum Hall Effect, Sample
Size Versus Sample Topology, and Quality Control Management of III–V Molecular
Beam Epitaxy.” International Journal of Modern Physics B, vol. 12, no.
11, World Scientific Pub Co Pte Lt, 1998, pp. 1147–70, doi:10.1142/s0217979298000636.
short: R.D. Tscheuschner, S. Hoch, E. Leschinsky, C. Meier, S. Theis, A.D. Wieck,
International Journal of Modern Physics B 12 (1998) 1147–1170.
date_created: 2019-02-13T15:00:15Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
doi: 10.1142/s0217979298000636
extern: '1'
intvolume: ' 12'
issue: '11'
language:
- iso: eng
page: 1147-1170
publication: International Journal of Modern Physics B
publication_identifier:
issn:
- 0217-9792
- 1793-6578
publication_status: published
publisher: World Scientific Pub Co Pte Lt
status: public
title: Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology,
and Quality Control Management of III–V Molecular Beam Epitaxy
type: journal_article
user_id: '20798'
volume: 12
year: '1998'
...
---
_id: '7693'
author:
- first_name: Soheyla
full_name: Eshlaghi, Soheyla
last_name: Eshlaghi
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dieter
full_name: Suter, Dieter
last_name: Suter
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced
intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of
Applied Physics. 1999;86(11):6605-6607. doi:10.1063/1.371720
apa: Eshlaghi, S., Meier, C., Suter, D., Reuter, D., & Wieck, A. D. (1999).
Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam
in AlAs/GaAs quantum wells. Journal of Applied Physics, 86(11),
6605–6607. https://doi.org/10.1063/1.371720
bibtex: '@article{Eshlaghi_Meier_Suter_Reuter_Wieck_1999, title={Depth profile of
the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum
wells}, volume={86}, DOI={10.1063/1.371720},
number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, D. and
Wieck, A. D.}, year={1999}, pages={6605–6607} }'
chicago: 'Eshlaghi, Soheyla, Cedrik Meier, Dieter Suter, D. Reuter, and A. D. Wieck.
“Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam
in AlAs/GaAs Quantum Wells.” Journal of Applied Physics 86, no. 11 (1999):
6605–7. https://doi.org/10.1063/1.371720.'
ieee: S. Eshlaghi, C. Meier, D. Suter, D. Reuter, and A. D. Wieck, “Depth profile
of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs
quantum wells,” Journal of Applied Physics, vol. 86, no. 11, pp. 6605–6607,
1999.
mla: Eshlaghi, Soheyla, et al. “Depth Profile of the Implantation-Enhanced Intermixing
of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” Journal of Applied Physics,
vol. 86, no. 11, AIP Publishing, 1999, pp. 6605–07, doi:10.1063/1.371720.
short: S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied
Physics 86 (1999) 6605–6607.
date_created: 2019-02-13T14:59:37Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
doi: 10.1063/1.371720
extern: '1'
intvolume: ' 86'
issue: '11'
language:
- iso: eng
page: 6605-6607
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam
in AlAs/GaAs quantum wells
type: journal_article
user_id: '20798'
volume: 86
year: '1999'
...
---
_id: '7691'
author:
- first_name: Dorina
full_name: Diaconescu, Dorina
last_name: Diaconescu
- first_name: Sascha
full_name: Hoch, Sascha
last_name: Hoch
- first_name: Christian
full_name: Heidtkamp, Christian
last_name: Heidtkamp
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
- first_name: Andreas D
full_name: Wieck, Andreas D
last_name: Wieck
citation:
ama: 'Diaconescu D, Hoch S, Heidtkamp C, Meier C, Reuter D, Wieck AD. A new peak
in the bend resistance of a four-terminal device written by FIB implantation.
Physica B: Condensed Matter. 2000;284-288:1906-1907. doi:10.1016/s0921-4526(99)03002-1'
apa: 'Diaconescu, D., Hoch, S., Heidtkamp, C., Meier, C., Reuter, D., & Wieck,
A. D. (2000). A new peak in the bend resistance of a four-terminal device written
by FIB implantation. Physica B: Condensed Matter, 284–288,
1906–1907. https://doi.org/10.1016/s0921-4526(99)03002-1'
bibtex: '@article{Diaconescu_Hoch_Heidtkamp_Meier_Reuter_Wieck_2000, title={A new
peak in the bend resistance of a four-terminal device written by FIB implantation},
volume={284–288}, DOI={10.1016/s0921-4526(99)03002-1},
journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Diaconescu,
Dorina and Hoch, Sascha and Heidtkamp, Christian and Meier, Cedrik and Reuter,
Dirk and Wieck, Andreas D}, year={2000}, pages={1906–1907} }'
chicago: 'Diaconescu, Dorina, Sascha Hoch, Christian Heidtkamp, Cedrik Meier, Dirk
Reuter, and Andreas D Wieck. “A New Peak in the Bend Resistance of a Four-Terminal
Device Written by FIB Implantation.” Physica B: Condensed Matter 284–288
(2000): 1906–7. https://doi.org/10.1016/s0921-4526(99)03002-1.'
ieee: 'D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, and A. D. Wieck,
“A new peak in the bend resistance of a four-terminal device written by FIB implantation,”
Physica B: Condensed Matter, vol. 284–288, pp. 1906–1907, 2000.'
mla: 'Diaconescu, Dorina, et al. “A New Peak in the Bend Resistance of a Four-Terminal
Device Written by FIB Implantation.” Physica B: Condensed Matter, vol.
284–288, Elsevier BV, 2000, pp. 1906–07, doi:10.1016/s0921-4526(99)03002-1.'
short: 'D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, A.D. Wieck, Physica
B: Condensed Matter 284–288 (2000) 1906–1907.'
date_created: 2019-02-13T14:56:34Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
doi: 10.1016/s0921-4526(99)03002-1
extern: '1'
language:
- iso: eng
page: 1906-1907
publication: 'Physica B: Condensed Matter'
publication_identifier:
issn:
- 0921-4526
publication_status: published
publisher: Elsevier BV
status: public
title: A new peak in the bend resistance of a four-terminal device written by FIB
implantation
type: journal_article
user_id: '20798'
volume: 284-288
year: '2000'
...
---
_id: '7692'
author:
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: M. A.
full_name: Alvarez, M. A.
last_name: Alvarez
- first_name: J.
full_name: Koch, J.
last_name: Koch
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: 'Reuter D, Meier C, Alvarez MA, Koch J, Wieck AD. Laterally resolved doping
by focused ion beam implantation. In: IECON Proc. . ; 2000:1878.'
apa: Reuter, D., Meier, C., Alvarez, M. A., Koch, J., & Wieck, A. D. (2000).
Laterally resolved doping by focused ion beam implantation. In IECON Proc.
(p. 1878).
bibtex: '@inproceedings{Reuter_Meier_Alvarez_Koch_Wieck_2000, title={Laterally resolved
doping by focused ion beam implantation}, booktitle={IECON Proc. }, author={Reuter,
D. and Meier, Cedrik and Alvarez, M. A. and Koch, J. and Wieck, A. D.}, year={2000},
pages={1878} }'
chicago: Reuter, D., Cedrik Meier, M. A. Alvarez, J. Koch, and A. D. Wieck. “Laterally
Resolved Doping by Focused Ion Beam Implantation.” In IECON Proc. , 1878,
2000.
ieee: D. Reuter, C. Meier, M. A. Alvarez, J. Koch, and A. D. Wieck, “Laterally resolved
doping by focused ion beam implantation,” in IECON Proc. , 2000, p. 1878.
mla: Reuter, D., et al. “Laterally Resolved Doping by Focused Ion Beam Implantation.”
IECON Proc. , 2000, p. 1878.
short: 'D. Reuter, C. Meier, M.A. Alvarez, J. Koch, A.D. Wieck, in: IECON Proc.
, 2000, p. 1878.'
conference:
name: 26th Annual Conference of the IEEE-Industrial-Electronics-Society
date_created: 2019-02-13T14:59:13Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
extern: '1'
language:
- iso: eng
page: '1878'
publication: 'IECON Proc. '
status: public
title: Laterally resolved doping by focused ion beam implantation
type: conference
user_id: '20798'
year: '2000'
...
---
_id: '7690'
author:
- first_name: C.
full_name: Heidtkamp, C.
last_name: Heidtkamp
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: M.
full_name: Versen, M.
last_name: Versen
- first_name: S.
full_name: Hoch, S.
last_name: Hoch
- first_name: D.
full_name: Diaconescu, D.
last_name: Diaconescu
- first_name: A.D.
full_name: Wieck, A.D.
last_name: Wieck
citation:
ama: 'Heidtkamp C, Meier C, Reuter D, et al. Tunable backscattering in quantum Hall
systems induced by neighbouring gates. Physica B: Condensed Matter. 2000;284-288:1728-1729.
doi:10.1016/s0921-4526(99)02892-6'
apa: 'Heidtkamp, C., Meier, C., Reuter, D., Versen, M., Hoch, S., Diaconescu, D.,
& Wieck, A. D. (2000). Tunable backscattering in quantum Hall systems induced
by neighbouring gates. Physica B: Condensed Matter, 284–288,
1728–1729. https://doi.org/10.1016/s0921-4526(99)02892-6'
bibtex: '@article{Heidtkamp_Meier_Reuter_Versen_Hoch_Diaconescu_Wieck_2000, title={Tunable
backscattering in quantum Hall systems induced by neighbouring gates}, volume={284–288},
DOI={10.1016/s0921-4526(99)02892-6},
journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Heidtkamp,
C. and Meier, Cedrik and Reuter, D. and Versen, M. and Hoch, S. and Diaconescu,
D. and Wieck, A.D.}, year={2000}, pages={1728–1729} }'
chicago: 'Heidtkamp, C., Cedrik Meier, D. Reuter, M. Versen, S. Hoch, D. Diaconescu,
and A.D. Wieck. “Tunable Backscattering in Quantum Hall Systems Induced by Neighbouring
Gates.” Physica B: Condensed Matter 284–288 (2000): 1728–29. https://doi.org/10.1016/s0921-4526(99)02892-6.'
ieee: 'C. Heidtkamp et al., “Tunable backscattering in quantum Hall systems
induced by neighbouring gates,” Physica B: Condensed Matter, vol. 284–288,
pp. 1728–1729, 2000.'
mla: 'Heidtkamp, C., et al. “Tunable Backscattering in Quantum Hall Systems Induced
by Neighbouring Gates.” Physica B: Condensed Matter, vol. 284–288, Elsevier
BV, 2000, pp. 1728–29, doi:10.1016/s0921-4526(99)02892-6.'
short: 'C. Heidtkamp, C. Meier, D. Reuter, M. Versen, S. Hoch, D. Diaconescu, A.D.
Wieck, Physica B: Condensed Matter 284–288 (2000) 1728–1729.'
date_created: 2019-02-13T14:55:39Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
doi: 10.1016/s0921-4526(99)02892-6
extern: '1'
language:
- iso: eng
page: 1728-1729
publication: 'Physica B: Condensed Matter'
publication_identifier:
issn:
- 0921-4526
publication_status: published
publisher: Elsevier BV
status: public
title: Tunable backscattering in quantum Hall systems induced by neighbouring gates
type: journal_article
user_id: '20798'
volume: 284-288
year: '2000'
...
---
_id: '8767'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: M. A. Serrano
full_name: Álvarez, M. A. Serrano
last_name: Álvarez
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively
doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics
Letters. 2001;79:377-379. doi:10.1063/1.1386618
apa: Reuter, D., Meier, C., Álvarez, M. A. S., & Wieck, A. D. (2001). Increased
thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices.
Applied Physics Letters, 79, 377–379. https://doi.org/10.1063/1.1386618
bibtex: '@article{Reuter_Meier_Álvarez_Wieck_2001, title={Increased thermal budget
for selectively doped heterostructures by employing AlAs/GaAs superlattices},
volume={79}, DOI={10.1063/1.1386618},
journal={Applied Physics Letters}, author={Reuter, Dirk and Meier, Cedrik and
Álvarez, M. A. Serrano and Wieck, A. D.}, year={2001}, pages={377–379} }'
chicago: 'Reuter, Dirk, Cedrik Meier, M. A. Serrano Álvarez, and A. D. Wieck. “Increased
Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.”
Applied Physics Letters 79 (2001): 377–79. https://doi.org/10.1063/1.1386618.'
ieee: D. Reuter, C. Meier, M. A. S. Álvarez, and A. D. Wieck, “Increased thermal
budget for selectively doped heterostructures by employing AlAs/GaAs superlattices,”
Applied Physics Letters, vol. 79, pp. 377–379, 2001.
mla: Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures
by Employing AlAs/GaAs Superlattices.” Applied Physics Letters, vol. 79,
2001, pp. 377–79, doi:10.1063/1.1386618.
short: D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters
79 (2001) 377–379.
date_created: 2019-04-01T07:54:36Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1386618
intvolume: ' 79'
language:
- iso: eng
page: 377-379
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Increased thermal budget for selectively doped heterostructures by employing
AlAs/GaAs superlattices
type: journal_article
user_id: '20798'
volume: 79
year: '2001'
...
---
_id: '8737'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A
full_name: Seekamp, A
last_name: Seekamp
- first_name: A.D
full_name: Wieck, A.D
last_name: Wieck
citation:
ama: 'Reuter D, Meier C, Seekamp A, Wieck A. Fabrication of two-dimensional in-plane
gate transistors by focused ion beam doping. Physica E: Low-dimensional Systems
and Nanostructures. 2002;13:938-941. doi:10.1016/s1386-9477(02)00239-4'
apa: 'Reuter, D., Meier, C., Seekamp, A., & Wieck, A. . (2002). Fabrication
of two-dimensional in-plane gate transistors by focused ion beam doping. Physica
E: Low-Dimensional Systems and Nanostructures, 13, 938–941. https://doi.org/10.1016/s1386-9477(02)00239-4'
bibtex: '@article{Reuter_Meier_Seekamp_Wieck_2002, title={Fabrication of two-dimensional
in-plane gate transistors by focused ion beam doping}, volume={13}, DOI={10.1016/s1386-9477(02)00239-4},
journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter,
Dirk and Meier, Cedrik and Seekamp, A and Wieck, A.D}, year={2002}, pages={938–941}
}'
chicago: 'Reuter, Dirk, Cedrik Meier, A Seekamp, and A.D Wieck. “Fabrication of
Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” Physica
E: Low-Dimensional Systems and Nanostructures 13 (2002): 938–41. https://doi.org/10.1016/s1386-9477(02)00239-4.'
ieee: 'D. Reuter, C. Meier, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional
in-plane gate transistors by focused ion beam doping,” Physica E: Low-dimensional
Systems and Nanostructures, vol. 13, pp. 938–941, 2002.'
mla: 'Reuter, Dirk, et al. “Fabrication of Two-Dimensional in-Plane Gate Transistors
by Focused Ion Beam Doping.” Physica E: Low-Dimensional Systems and Nanostructures,
vol. 13, 2002, pp. 938–41, doi:10.1016/s1386-9477(02)00239-4.'
short: 'D. Reuter, C. Meier, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems
and Nanostructures 13 (2002) 938–941.'
date_created: 2019-03-28T15:14:19Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s1386-9477(02)00239-4
intvolume: ' 13'
language:
- iso: eng
page: 938-941
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
status: public
title: Fabrication of two-dimensional in-plane gate transistors by focused ion beam
doping
type: journal_article
user_id: '20798'
volume: 13
year: '2002'
...
---
_id: '7684'
author:
- first_name: D
full_name: Reuter, D
last_name: Reuter
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: C
full_name: Riedesel, C
last_name: Riedesel
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas
formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation
doping. Semiconductor Science and Technology. 2002;17(6):585-589. doi:10.1088/0268-1242/17/6/315
apa: Reuter, D., Meier, C., Riedesel, C., & Wieck, A. D. (2002). Local two-dimensional
electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures
by focused Si-implantation doping. Semiconductor Science and Technology,
17(6), 585–589. https://doi.org/10.1088/0268-1242/17/6/315
bibtex: '@article{Reuter_Meier_Riedesel_Wieck_2002, title={Local two-dimensional
electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures
by focused Si-implantation doping}, volume={17}, DOI={10.1088/0268-1242/17/6/315},
number={6}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing},
author={Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}, year={2002},
pages={585–589} }'
chicago: 'Reuter, D, Cedrik Meier, C Riedesel, and A D Wieck. “Local Two-Dimensional
Electron Gas Formation in p-Doped GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures
by Focused Si-Implantation Doping.” Semiconductor Science and Technology
17, no. 6 (2002): 585–89. https://doi.org/10.1088/0268-1242/17/6/315.'
ieee: D. Reuter, C. Meier, C. Riedesel, and A. D. Wieck, “Local two-dimensional
electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures
by focused Si-implantation doping,” Semiconductor Science and Technology,
vol. 17, no. 6, pp. 585–589, 2002.
mla: Reuter, D., et al. “Local Two-Dimensional Electron Gas Formation in p-Doped
GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures by Focused Si-Implantation Doping.”
Semiconductor Science and Technology, vol. 17, no. 6, IOP Publishing, 2002,
pp. 585–89, doi:10.1088/0268-1242/17/6/315.
short: D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology
17 (2002) 585–589.
date_created: 2019-02-13T14:52:18Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1088/0268-1242/17/6/315
extern: '1'
intvolume: ' 17'
issue: '6'
language:
- iso: eng
page: 585-589
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
publication_status: published
publisher: IOP Publishing
status: public
title: Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs
heterostructures by focused Si-implantation doping
type: journal_article
user_id: '20798'
volume: 17
year: '2002'
...
---
_id: '7685'
author:
- first_name: M.
full_name: Rahm, M.
last_name: Rahm
- first_name: J.
full_name: Raabe, J.
last_name: Raabe
- first_name: R.
full_name: Pulwey, R.
last_name: Pulwey
- first_name: J.
full_name: Biberger, J.
last_name: Biberger
- first_name: W.
full_name: Wegscheider, W.
last_name: Wegscheider
- first_name: D.
full_name: Weiss, D.
last_name: Weiss
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Rahm M, Raabe J, Pulwey R, et al. Planar Hall sensors for micro-Hall magnetometry.
Journal of Applied Physics. 2002;91(10):7980. doi:10.1063/1.1453338
apa: Rahm, M., Raabe, J., Pulwey, R., Biberger, J., Wegscheider, W., Weiss, D.,
& Meier, C. (2002). Planar Hall sensors for micro-Hall magnetometry. Journal
of Applied Physics, 91(10), 7980. https://doi.org/10.1063/1.1453338
bibtex: '@article{Rahm_Raabe_Pulwey_Biberger_Wegscheider_Weiss_Meier_2002, title={Planar
Hall sensors for micro-Hall magnetometry}, volume={91}, DOI={10.1063/1.1453338},
number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Rahm, M. and Raabe, J. and Pulwey, R. and Biberger, J. and Wegscheider,
W. and Weiss, D. and Meier, Cedrik}, year={2002}, pages={7980} }'
chicago: 'Rahm, M., J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss,
and Cedrik Meier. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal
of Applied Physics 91, no. 10 (2002): 7980. https://doi.org/10.1063/1.1453338.'
ieee: M. Rahm et al., “Planar Hall sensors for micro-Hall magnetometry,”
Journal of Applied Physics, vol. 91, no. 10, p. 7980, 2002.
mla: Rahm, M., et al. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal
of Applied Physics, vol. 91, no. 10, AIP Publishing, 2002, p. 7980, doi:10.1063/1.1453338.
short: M. Rahm, J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, C. Meier,
Journal of Applied Physics 91 (2002) 7980.
date_created: 2019-02-13T14:52:58Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1453338
extern: '1'
intvolume: ' 91'
issue: '10'
language:
- iso: eng
page: '7980'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
publication_status: published
publisher: AIP Publishing
status: public
title: Planar Hall sensors for micro-Hall magnetometry
type: journal_article
user_id: '20798'
volume: 91
year: '2002'
...
---
_id: '7682'
author:
- first_name: C
full_name: Riedesel, C
last_name: Riedesel
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: P
full_name: Schafmeister, P
last_name: Schafmeister
- first_name: D
full_name: Reuter, D
last_name: Reuter
- first_name: A.D
full_name: Wieck, A.D
last_name: Wieck
citation:
ama: 'Riedesel C, Meier C, Schafmeister P, Reuter D, Wieck A. Fabrication of high
quality two-dimensional electron gases by overgrowth of focused ion beam implantation
doped AlxGa1−xAs. Physica E: Low-dimensional Systems and Nanostructures.
2003;17:503-504. doi:10.1016/s1386-9477(02)00849-4'
apa: 'Riedesel, C., Meier, C., Schafmeister, P., Reuter, D., & Wieck, A. . (2003).
Fabrication of high quality two-dimensional electron gases by overgrowth of focused
ion beam implantation doped AlxGa1−xAs. Physica E: Low-Dimensional Systems
and Nanostructures, 17, 503–504. https://doi.org/10.1016/s1386-9477(02)00849-4'
bibtex: '@article{Riedesel_Meier_Schafmeister_Reuter_Wieck_2003, title={Fabrication
of high quality two-dimensional electron gases by overgrowth of focused ion beam
implantation doped AlxGa1−xAs}, volume={17}, DOI={10.1016/s1386-9477(02)00849-4},
journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier
BV}, author={Riedesel, C and Meier, Cedrik and Schafmeister, P and Reuter, D and
Wieck, A.D}, year={2003}, pages={503–504} }'
chicago: 'Riedesel, C, Cedrik Meier, P Schafmeister, D Reuter, and A.D Wieck. “Fabrication
of High Quality Two-Dimensional Electron Gases by Overgrowth of Focused Ion Beam
Implantation Doped AlxGa1−xAs.” Physica E: Low-Dimensional Systems and Nanostructures
17 (2003): 503–4. https://doi.org/10.1016/s1386-9477(02)00849-4.'
ieee: 'C. Riedesel, C. Meier, P. Schafmeister, D. Reuter, and A. . Wieck, “Fabrication
of high quality two-dimensional electron gases by overgrowth of focused ion beam
implantation doped AlxGa1−xAs,” Physica E: Low-dimensional Systems and Nanostructures,
vol. 17, pp. 503–504, 2003.'
mla: 'Riedesel, C., et al. “Fabrication of High Quality Two-Dimensional Electron
Gases by Overgrowth of Focused Ion Beam Implantation Doped AlxGa1−xAs.” Physica
E: Low-Dimensional Systems and Nanostructures, vol. 17, Elsevier BV, 2003,
pp. 503–04, doi:10.1016/s1386-9477(02)00849-4.'
short: 'C. Riedesel, C. Meier, P. Schafmeister, D. Reuter, A.. Wieck, Physica E:
Low-Dimensional Systems and Nanostructures 17 (2003) 503–504.'
date_created: 2019-02-13T14:50:50Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1016/s1386-9477(02)00849-4
extern: '1'
intvolume: ' 17'
language:
- iso: eng
page: 503-504
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Fabrication of high quality two-dimensional electron gases by overgrowth of
focused ion beam implantation doped AlxGa1−xAs
type: journal_article
user_id: '20798'
volume: 17
year: '2003'
...
---
_id: '7683'
author:
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: C.
full_name: Riedesel, C.
last_name: Riedesel
- first_name: P.
full_name: Schafmeister, P.
last_name: Schafmeister
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Reuter D, Riedesel C, Schafmeister P, Meier C, Wieck AD. Fabrication of high-quality
two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs.
Applied Physics Letters. 2003;82(3):481-483. doi:10.1063/1.1539925
apa: Reuter, D., Riedesel, C., Schafmeister, P., Meier, C., & Wieck, A. D. (2003).
Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped
AlxGa1−xAs. Applied Physics Letters, 82(3), 481–483. https://doi.org/10.1063/1.1539925
bibtex: '@article{Reuter_Riedesel_Schafmeister_Meier_Wieck_2003, title={Fabrication
of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped
AlxGa1−xAs}, volume={82}, DOI={10.1063/1.1539925},
number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reuter,
D. and Riedesel, C. and Schafmeister, P. and Meier, Cedrik and Wieck, A. D.},
year={2003}, pages={481–483} }'
chicago: 'Reuter, D., C. Riedesel, P. Schafmeister, Cedrik Meier, and A. D. Wieck.
“Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped
AlxGa1−xAs.” Applied Physics Letters 82, no. 3 (2003): 481–83. https://doi.org/10.1063/1.1539925.'
ieee: D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. Wieck, “Fabrication
of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped
AlxGa1−xAs,” Applied Physics Letters, vol. 82, no. 3, pp. 481–483, 2003.
mla: Reuter, D., et al. “Fabrication of High-Quality Two-Dimensional Electron Gases
by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters,
vol. 82, no. 3, AIP Publishing, 2003, pp. 481–83, doi:10.1063/1.1539925.
short: D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, A.D. Wieck, Applied Physics
Letters 82 (2003) 481–483.
date_created: 2019-02-13T14:51:34Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1539925
extern: '1'
intvolume: ' 82'
issue: '3'
language:
- iso: eng
page: 481-483
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication of high-quality two-dimensional electron gases by overgrowth of
focused-ion-beam-doped AlxGa1−xAs
type: journal_article
user_id: '20798'
volume: 82
year: '2003'
...
---
_id: '7681'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
- first_name: Christof
full_name: Riedesel, Christof
last_name: Riedesel
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron
systems by focused ion beam doping of III/V semiconductor heterostructures. Journal
of Applied Physics. 2003;93(10):6100-6106. doi:10.1063/1.1563032
apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication
of two-dimensional electron systems by focused ion beam doping of III/V semiconductor
heterostructures. Journal of Applied Physics, 93(10), 6100–6106.
https://doi.org/10.1063/1.1563032
bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures},
volume={93}, DOI={10.1063/1.1563032},
number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas
D.}, year={2003}, pages={6100–6106} }'
chicago: 'Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication
of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor
Heterostructures.” Journal of Applied Physics 93, no. 10 (2003): 6100–6106.
https://doi.org/10.1063/1.1563032.'
ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures,”
Journal of Applied Physics, vol. 93, no. 10, pp. 6100–6106, 2003.
mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused
Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied
Physics, vol. 93, no. 10, AIP Publishing, 2003, pp. 6100–06, doi:10.1063/1.1563032.
short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics
93 (2003) 6100–6106.
date_created: 2019-02-13T14:49:57Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1563032
extern: '1'
intvolume: ' 93'
issue: '10'
language:
- iso: eng
page: 6100-6106
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication of two-dimensional electron systems by focused ion beam doping
of III/V semiconductor heterostructures
type: journal_article
user_id: '20798'
volume: 93
year: '2003'
...
---
_id: '7678'
author:
- first_name: E. D.
full_name: Haberer, E. D.
last_name: Haberer
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A. R.
full_name: Stonas, A. R.
last_name: Stonas
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
citation:
ama: Haberer ED, Sharma R, Meier C, et al. Free-standing, optically pumped, GaN∕InGaN
microdisk lasers fabricated by photoelectrochemical etching. Applied Physics
Letters. 2004;85(22):5179-5181. doi:10.1063/1.1829167
apa: Haberer, E. D., Sharma, R., Meier, C., Stonas, A. R., Nakamura, S., DenBaars,
S. P., & Hu, E. L. (2004). Free-standing, optically pumped, GaN∕InGaN microdisk
lasers fabricated by photoelectrochemical etching. Applied Physics Letters,
85(22), 5179–5181. https://doi.org/10.1063/1.1829167
bibtex: '@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing,
optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical
etching}, volume={85}, DOI={10.1063/1.1829167},
number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer,
E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and
DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }'
chicago: 'Haberer, E. D., R. Sharma, Cedrik Meier, A. R. Stonas, S. Nakamura, S.
P. DenBaars, and E. L. Hu. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk
Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters
85, no. 22 (2004): 5179–81. https://doi.org/10.1063/1.1829167.'
ieee: E. D. Haberer et al., “Free-standing, optically pumped, GaN∕InGaN microdisk
lasers fabricated by photoelectrochemical etching,” Applied Physics Letters,
vol. 85, no. 22, pp. 5179–5181, 2004.
mla: Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk
Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters,
vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:10.1063/1.1829167.
short: E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars,
E.L. Hu, Applied Physics Letters 85 (2004) 5179–5181.
date_created: 2019-02-13T14:47:45Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1829167
extern: '1'
intvolume: ' 85'
issue: '22'
language:
- iso: eng
page: 5179-5181
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical
etching
type: journal_article
user_id: '20798'
volume: 85
year: '2004'
...
---
_id: '7679'
author:
- first_name: Jörg
full_name: Knipping, Jörg
last_name: Knipping
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
- first_name: Bernd
full_name: Rellinghaus, Bernd
last_name: Rellinghaus
- first_name: Paul
full_name: Roth, Paul
last_name: Roth
- first_name: Denan
full_name: Konjhodzic, Denan
last_name: Konjhodzic
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Knipping J, Wiggers H, Rellinghaus B, Roth P, Konjhodzic D, Meier C. Synthesis
of High Purity Silicon Nanoparticles in a Low Pressure Microwave Reactor. Journal
of Nanoscience and Nanotechnology. 2004;4(8):1039-1044. doi:10.1166/jnn.2004.149
apa: Knipping, J., Wiggers, H., Rellinghaus, B., Roth, P., Konjhodzic, D., &
Meier, C. (2004). Synthesis of High Purity Silicon Nanoparticles in a Low Pressure
Microwave Reactor. Journal of Nanoscience and Nanotechnology, 4(8),
1039–1044. https://doi.org/10.1166/jnn.2004.149
bibtex: '@article{Knipping_Wiggers_Rellinghaus_Roth_Konjhodzic_Meier_2004, title={Synthesis
of High Purity Silicon Nanoparticles in a Low Pressure Microwave Reactor}, volume={4},
DOI={10.1166/jnn.2004.149},
number={8}, journal={Journal of Nanoscience and Nanotechnology}, publisher={American
Scientific Publishers}, author={Knipping, Jörg and Wiggers, Hartmut and Rellinghaus,
Bernd and Roth, Paul and Konjhodzic, Denan and Meier, Cedrik}, year={2004}, pages={1039–1044}
}'
chicago: 'Knipping, Jörg, Hartmut Wiggers, Bernd Rellinghaus, Paul Roth, Denan Konjhodzic,
and Cedrik Meier. “Synthesis of High Purity Silicon Nanoparticles in a Low Pressure
Microwave Reactor.” Journal of Nanoscience and Nanotechnology 4, no. 8
(2004): 1039–44. https://doi.org/10.1166/jnn.2004.149.'
ieee: J. Knipping, H. Wiggers, B. Rellinghaus, P. Roth, D. Konjhodzic, and C. Meier,
“Synthesis of High Purity Silicon Nanoparticles in a Low Pressure Microwave Reactor,”
Journal of Nanoscience and Nanotechnology, vol. 4, no. 8, pp. 1039–1044,
2004.
mla: Knipping, Jörg, et al. “Synthesis of High Purity Silicon Nanoparticles in a
Low Pressure Microwave Reactor.” Journal of Nanoscience and Nanotechnology,
vol. 4, no. 8, American Scientific Publishers, 2004, pp. 1039–44, doi:10.1166/jnn.2004.149.
short: J. Knipping, H. Wiggers, B. Rellinghaus, P. Roth, D. Konjhodzic, C. Meier,
Journal of Nanoscience and Nanotechnology 4 (2004) 1039–1044.
date_created: 2019-02-13T14:48:32Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1166/jnn.2004.149
extern: '1'
intvolume: ' 4'
issue: '8'
language:
- iso: eng
page: 1039-1044
publication: Journal of Nanoscience and Nanotechnology
publication_identifier:
issn:
- 1533-4880
- 0000-0000
publication_status: published
publisher: American Scientific Publishers
status: public
title: Synthesis of High Purity Silicon Nanoparticles in a Low Pressure Microwave
Reactor
type: journal_article
user_id: '20798'
volume: 4
year: '2004'
...
---
_id: '7680'
author:
- first_name: O
full_name: Wibbelhoff, O
last_name: Wibbelhoff
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A
full_name: Lorke, A
last_name: Lorke
- first_name: P
full_name: Schafmeister, P
last_name: Schafmeister
- first_name: A.D
full_name: Wieck, A.D
last_name: Wieck
citation:
ama: 'Wibbelhoff O, Meier C, Lorke A, Schafmeister P, Wieck A. Wave function mapping
of self-assembled quantum dots by capacitance spectroscopy. Physica E: Low-dimensional
Systems and Nanostructures. 2004;21(2-4):516-520. doi:10.1016/j.physe.2003.11.077'
apa: 'Wibbelhoff, O., Meier, C., Lorke, A., Schafmeister, P., & Wieck, A. .
(2004). Wave function mapping of self-assembled quantum dots by capacitance spectroscopy.
Physica E: Low-Dimensional Systems and Nanostructures, 21(2–4),
516–520. https://doi.org/10.1016/j.physe.2003.11.077'
bibtex: '@article{Wibbelhoff_Meier_Lorke_Schafmeister_Wieck_2004, title={Wave function
mapping of self-assembled quantum dots by capacitance spectroscopy}, volume={21},
DOI={10.1016/j.physe.2003.11.077},
number={2–4}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Wibbelhoff, O and Meier, Cedrik and Lorke, A
and Schafmeister, P and Wieck, A.D}, year={2004}, pages={516–520} }'
chicago: 'Wibbelhoff, O, Cedrik Meier, A Lorke, P Schafmeister, and A.D Wieck. “Wave
Function Mapping of Self-Assembled Quantum Dots by Capacitance Spectroscopy.”
Physica E: Low-Dimensional Systems and Nanostructures 21, no. 2–4 (2004):
516–20. https://doi.org/10.1016/j.physe.2003.11.077.'
ieee: 'O. Wibbelhoff, C. Meier, A. Lorke, P. Schafmeister, and A. . Wieck, “Wave
function mapping of self-assembled quantum dots by capacitance spectroscopy,”
Physica E: Low-dimensional Systems and Nanostructures, vol. 21, no. 2–4,
pp. 516–520, 2004.'
mla: 'Wibbelhoff, O., et al. “Wave Function Mapping of Self-Assembled Quantum Dots
by Capacitance Spectroscopy.” Physica E: Low-Dimensional Systems and Nanostructures,
vol. 21, no. 2–4, Elsevier BV, 2004, pp. 516–20, doi:10.1016/j.physe.2003.11.077.'
short: 'O. Wibbelhoff, C. Meier, A. Lorke, P. Schafmeister, A.. Wieck, Physica E:
Low-Dimensional Systems and Nanostructures 21 (2004) 516–520.'
date_created: 2019-02-13T14:49:13Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1016/j.physe.2003.11.077
extern: '1'
intvolume: ' 21'
issue: 2-4
language:
- iso: eng
page: 516-520
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Wave function mapping of self-assembled quantum dots by capacitance spectroscopy
type: journal_article
user_id: '20798'
volume: 21
year: '2004'
...
---
_id: '7658'
author:
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: P.
full_name: Kailuweit, P.
last_name: Kailuweit
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: U.
full_name: Zeitler, U.
last_name: Zeitler
- first_name: O.
full_name: Wibbelhoff, O.
last_name: Wibbelhoff
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: J. C.
full_name: Maan, J. C.
last_name: Maan
citation:
ama: Reuter D, Kailuweit P, Wieck AD, et al. Coulomb-Interaction-Induced Incomplete
Shell Filling in the Hole System of InAs Quantum Dots. Physical Review Letters.
2005;94(2). doi:10.1103/physrevlett.94.026808
apa: Reuter, D., Kailuweit, P., Wieck, A. D., Zeitler, U., Wibbelhoff, O., Meier,
C., … Maan, J. C. (2005). Coulomb-Interaction-Induced Incomplete Shell Filling
in the Hole System of InAs Quantum Dots. Physical Review Letters, 94(2).
https://doi.org/10.1103/physrevlett.94.026808
bibtex: '@article{Reuter_Kailuweit_Wieck_Zeitler_Wibbelhoff_Meier_Lorke_Maan_2005,
title={Coulomb-Interaction-Induced Incomplete Shell Filling in the Hole System
of InAs Quantum Dots}, volume={94}, DOI={10.1103/physrevlett.94.026808},
number={2}, journal={Physical Review Letters}, publisher={American Physical Society
(APS)}, author={Reuter, D. and Kailuweit, P. and Wieck, A. D. and Zeitler, U.
and Wibbelhoff, O. and Meier, Cedrik and Lorke, A. and Maan, J. C.}, year={2005}
}'
chicago: Reuter, D., P. Kailuweit, A. D. Wieck, U. Zeitler, O. Wibbelhoff, Cedrik
Meier, A. Lorke, and J. C. Maan. “Coulomb-Interaction-Induced Incomplete Shell
Filling in the Hole System of InAs Quantum Dots.” Physical Review Letters
94, no. 2 (2005). https://doi.org/10.1103/physrevlett.94.026808.
ieee: D. Reuter et al., “Coulomb-Interaction-Induced Incomplete Shell Filling
in the Hole System of InAs Quantum Dots,” Physical Review Letters, vol.
94, no. 2, 2005.
mla: Reuter, D., et al. “Coulomb-Interaction-Induced Incomplete Shell Filling in
the Hole System of InAs Quantum Dots.” Physical Review Letters, vol. 94,
no. 2, American Physical Society (APS), 2005, doi:10.1103/physrevlett.94.026808.
short: D. Reuter, P. Kailuweit, A.D. Wieck, U. Zeitler, O. Wibbelhoff, C. Meier,
A. Lorke, J.C. Maan, Physical Review Letters 94 (2005).
date_created: 2019-02-13T12:26:17Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1103/physrevlett.94.026808
extern: '1'
intvolume: ' 94'
issue: '2'
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Coulomb-Interaction-Induced Incomplete Shell Filling in the Hole System of
InAs Quantum Dots
type: journal_article
user_id: '20798'
volume: 94
year: '2005'
...
---
_id: '8674'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: P.
full_name: Kailuweit, P.
last_name: Kailuweit
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: U.
full_name: Zeitler, U.
last_name: Zeitler
- first_name: O.
full_name: Wibbelhoff, O.
last_name: Wibbelhoff
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: J. C.
full_name: Maan, J. C.
last_name: Maan
citation:
ama: Reuter D, Kailuweit P, Wieck AD, et al. Coulomb-Interaction-Induced Incomplete
Shell Filling in the Hole System of InAs Quantum Dots. Physical Review Letters.
2005. doi:10.1103/physrevlett.94.026808
apa: Reuter, D., Kailuweit, P., Wieck, A. D., Zeitler, U., Wibbelhoff, O., Meier,
C., … Maan, J. C. (2005). Coulomb-Interaction-Induced Incomplete Shell Filling
in the Hole System of InAs Quantum Dots. Physical Review Letters. https://doi.org/10.1103/physrevlett.94.026808
bibtex: '@article{Reuter_Kailuweit_Wieck_Zeitler_Wibbelhoff_Meier_Lorke_Maan_2005,
title={Coulomb-Interaction-Induced Incomplete Shell Filling in the Hole System
of InAs Quantum Dots}, DOI={10.1103/physrevlett.94.026808},
journal={Physical Review Letters}, author={Reuter, Dirk and Kailuweit, P. and
Wieck, A. D. and Zeitler, U. and Wibbelhoff, O. and Meier, Cedrik and Lorke, A.
and Maan, J. C.}, year={2005} }'
chicago: Reuter, Dirk, P. Kailuweit, A. D. Wieck, U. Zeitler, O. Wibbelhoff, Cedrik
Meier, A. Lorke, and J. C. Maan. “Coulomb-Interaction-Induced Incomplete Shell
Filling in the Hole System of InAs Quantum Dots.” Physical Review Letters,
2005. https://doi.org/10.1103/physrevlett.94.026808.
ieee: D. Reuter et al., “Coulomb-Interaction-Induced Incomplete Shell Filling
in the Hole System of InAs Quantum Dots,” Physical Review Letters, 2005.
mla: Reuter, Dirk, et al. “Coulomb-Interaction-Induced Incomplete Shell Filling
in the Hole System of InAs Quantum Dots.” Physical Review Letters, 2005,
doi:10.1103/physrevlett.94.026808.
short: D. Reuter, P. Kailuweit, A.D. Wieck, U. Zeitler, O. Wibbelhoff, C. Meier,
A. Lorke, J.C. Maan, Physical Review Letters (2005).
date_created: 2019-03-27T09:25:35Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.94.026808
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
status: public
title: Coulomb-Interaction-Induced Incomplete Shell Filling in the Hole System of
InAs Quantum Dots
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '7677'
author:
- first_name: S.
full_name: Lüttjohann, S.
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A.
full_name: Lork, A.
last_name: Lork
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: 'Lüttjohann S, Meier C, Lork A, Reuter D, Wieck AD. Emission from neutral and
charged excitons in self-organized InAs quantum dots: Band bending vs. Pauli-blocking.
In: Physics of Semiconductors. Vol 772. AIP Conf. Proc. ; 2005:733.'
apa: 'Lüttjohann, S., Meier, C., Lork, A., Reuter, D., & Wieck, A. D. (2005).
Emission from neutral and charged excitons in self-organized InAs quantum dots:
Band bending vs. Pauli-blocking. In Physics of Semiconductors (Vol. 772,
p. 733).'
bibtex: '@inproceedings{Lüttjohann_Meier_Lork_Reuter_Wieck_2005, series={AIP Conf.
Proc.}, title={Emission from neutral and charged excitons in self-organized InAs
quantum dots: Band bending vs. Pauli-blocking}, volume={772}, booktitle={Physics
of Semiconductors}, author={Lüttjohann, S. and Meier, Cedrik and Lork, A. and
Reuter, D. and Wieck, A. D.}, year={2005}, pages={733}, collection={AIP Conf.
Proc.} }'
chicago: 'Lüttjohann, S., Cedrik Meier, A. Lork, D. Reuter, and A. D. Wieck. “Emission
from Neutral and Charged Excitons in Self-Organized InAs Quantum Dots: Band Bending
vs. Pauli-Blocking.” In Physics of Semiconductors, 772:733. AIP Conf. Proc.,
2005.'
ieee: 'S. Lüttjohann, C. Meier, A. Lork, D. Reuter, and A. D. Wieck, “Emission from
neutral and charged excitons in self-organized InAs quantum dots: Band bending
vs. Pauli-blocking,” in Physics of Semiconductors, 2005, vol. 772, p. 733.'
mla: 'Lüttjohann, S., et al. “Emission from Neutral and Charged Excitons in Self-Organized
InAs Quantum Dots: Band Bending vs. Pauli-Blocking.” Physics of Semiconductors,
vol. 772, 2005, p. 733.'
short: 'S. Lüttjohann, C. Meier, A. Lork, D. Reuter, A.D. Wieck, in: Physics of
Semiconductors, 2005, p. 733.'
date_created: 2019-02-13T14:47:20Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
extern: '1'
intvolume: ' 772'
language:
- iso: eng
page: '733'
publication: Physics of Semiconductors
series_title: AIP Conf. Proc.
status: public
title: 'Emission from neutral and charged excitons in self-organized InAs quantum
dots: Band bending vs. Pauli-blocking'
type: conference
user_id: '20798'
volume: 772
year: '2005'
...
---
_id: '7653'
article_number: '243101'
author:
- first_name: Y.-S.
full_name: Choi, Y.-S.
last_name: Choi
- first_name: K.
full_name: Hennessy, K.
last_name: Hennessy
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: E.
full_name: Haberer, E.
last_name: Haberer
- first_name: Y.
full_name: Gao, Y.
last_name: Gao
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities.
Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713
apa: Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P.,
… Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. Applied
Physics Letters, 87(24). https://doi.org/10.1063/1.2147713
bibtex: '@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005,
title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={10.1063/1.2147713}, number={24243101},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S.
and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P.
and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }'
chicago: Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars,
S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.”
Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2147713.
ieee: Y.-S. Choi et al., “GaN blue photonic crystal membrane nanocavities,”
Applied Physics Letters, vol. 87, no. 24, 2005.
mla: Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied
Physics Letters, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:10.1063/1.2147713.
short: Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S.
Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005).
date_created: 2019-02-13T11:47:23Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2147713
extern: '1'
intvolume: ' 87'
issue: '24'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: GaN blue photonic crystal membrane nanocavities
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7657'
article_number: '084306'
author:
- first_name: Vasyl G.
full_name: Kravets, Vasyl G.
last_name: Kravets
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Denan
full_name: Konjhodzic, Denan
last_name: Konjhodzic
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
citation:
ama: Kravets VG, Meier C, Konjhodzic D, Lorke A, Wiggers H. Infrared properties
of silicon nanoparticles. Journal of Applied Physics. 2005;97(8). doi:10.1063/1.1866475
apa: Kravets, V. G., Meier, C., Konjhodzic, D., Lorke, A., & Wiggers, H. (2005).
Infrared properties of silicon nanoparticles. Journal of Applied Physics,
97(8). https://doi.org/10.1063/1.1866475
bibtex: '@article{Kravets_Meier_Konjhodzic_Lorke_Wiggers_2005, title={Infrared properties
of silicon nanoparticles}, volume={97}, DOI={10.1063/1.1866475},
number={8084306}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel
and Wiggers, Hartmut}, year={2005} }'
chicago: Kravets, Vasyl G., Cedrik Meier, Denan Konjhodzic, Axel Lorke, and Hartmut
Wiggers. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied
Physics 97, no. 8 (2005). https://doi.org/10.1063/1.1866475.
ieee: V. G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, and H. Wiggers, “Infrared
properties of silicon nanoparticles,” Journal of Applied Physics, vol.
97, no. 8, 2005.
mla: Kravets, Vasyl G., et al. “Infrared Properties of Silicon Nanoparticles.” Journal
of Applied Physics, vol. 97, no. 8, 084306, AIP Publishing, 2005, doi:10.1063/1.1866475.
short: V.G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, H. Wiggers, Journal of Applied
Physics 97 (2005).
date_created: 2019-02-13T11:51:22Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1866475
extern: '1'
intvolume: ' 97'
issue: '8'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Infrared properties of silicon nanoparticles
type: journal_article
user_id: '20798'
volume: 97
year: '2005'
...