@article{3900,
  abstract     = {{The coherent state preparation and control of single quantum systems is an important prerequisite for the implementation of functional quantum devices. Prominent examples for such systems are semiconductor quantum dots, which exhibit a fine structure split single exciton state and a V-type three level structure, given by a common ground state and two distinguishable and separately excitable transitions. In this work we introduce a novel concept for the preparation of a robust inversion by the sequential excitation in a V-type system via distinguishable paths.}},
  author       = {{Mantei, D. and Förstner, Jens and Gordon, S. and Leier, Y. A. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Zrenner, Artur}},
  issn         = {{2045-2322}},
  journal      = {{Scientific Reports}},
  keywords     = {{tet_topic_qd}},
  number       = {{1}},
  pages        = {{10313}},
  publisher    = {{Springer Nature}},
  title        = {{{Robust Population Inversion by Polarization Selective Pulsed Excitation}}},
  doi          = {{10.1038/srep10313}},
  volume       = {{5}},
  year         = {{2015}},
}

@article{21036,
  author       = {{Brecht, Benjamin and Reddy, Dileep V. and Silberhorn, Christine and Raymer, M. G.}},
  issn         = {{2160-3308}},
  journal      = {{Physical Review X}},
  title        = {{{Photon Temporal Modes: A Complete Framework for Quantum Information Science}}},
  doi          = {{10.1103/physrevx.5.041017}},
  volume       = {{5}},
  year         = {{2015}},
}

@article{21037,
  author       = {{Luo, Kai-Hong and Herrmann, Harald and Krapick, Stephan and Brecht, Benjamin and Ricken, Raimund and Quiring, Viktor and Suche, Hubertus and Sohler, Wolfgang and Silberhorn, Christine}},
  issn         = {{1367-2630}},
  journal      = {{New Journal of Physics}},
  title        = {{{Direct generation of genuine single-longitudinal-mode narrowband photon pairs}}},
  doi          = {{10.1088/1367-2630/17/7/073039}},
  volume       = {{17}},
  year         = {{2015}},
}

@article{22809,
  author       = {{Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  pages        = {{437--441}},
  title        = {{{Spatially indirect transitions in electric field tunable quantum dot diodes}}},
  doi          = {{10.1002/pssb.201552591}},
  year         = {{2015}},
}

@article{7217,
  author       = {{Jostmeier, Thorben and Wecker, Tobias and Reuter, Dirk and As, Donat Josef and Betz, Markus}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{21}},
  publisher    = {{AIP Publishing}},
  title        = {{{Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice}}},
  doi          = {{10.1063/1.4936330}},
  volume       = {{107}},
  year         = {{2015}},
}

@article{7218,
  author       = {{Debus, J. and Kudlacik, D. and Sapega, V. F. and Dunker, D. and Bohn, P. and Paßmann, F. and Braukmann, D. and Rautert, J. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{19}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Nuclear spin polarization in the electron spin-flip Raman scattering of singly charged (In,Ga)As/GaAs quantum dots}}},
  doi          = {{10.1103/physrevb.92.195421}},
  volume       = {{92}},
  year         = {{2015}},
}

@article{7219,
  author       = {{Kuhlmann, Andreas V. and Prechtel, Jonathan H. and Houel, Julien and Ludwig, Arne and Reuter, Dirk and Wieck, Andreas D. and Warburton, Richard J.}},
  issn         = {{2041-1723}},
  journal      = {{Nature Communications}},
  number       = {{1}},
  publisher    = {{Springer Nature}},
  title        = {{{Transform-limited single photons from a single quantum dot}}},
  doi          = {{10.1038/ncomms9204}},
  volume       = {{6}},
  year         = {{2015}},
}

@article{7220,
  author       = {{Mehta, M. and Reuter, Dirk and Kamruddin, M. and Tyagi, A. K. and Wieck, A. D.}},
  issn         = {{1793-2920}},
  journal      = {{Nano}},
  number       = {{04}},
  publisher    = {{World Scientific Pub Co Pte Lt}},
  title        = {{{Influence of Post-Implantation Annealing Parameters on the Focused Ion Beam Directed Nucleation of InAs Quantum Dots}}},
  doi          = {{10.1142/s1793292015500496}},
  volume       = {{10}},
  year         = {{2015}},
}

@article{7221,
  author       = {{Chen, J. C. H. and Klochan, O. and Micolich, A. P. and Das Gupta, K. and Sfigakis, F. and Ritchie, D. A. and Trunov, K. and Reuter, Dirk and Wieck, A. D. and Hamilton, A. R.}},
  issn         = {{0003-6951}},
  journal      = {{Applied Physics Letters}},
  number       = {{18}},
  publisher    = {{AIP Publishing}},
  title        = {{{Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts}}},
  doi          = {{10.1063/1.4918934}},
  volume       = {{106}},
  year         = {{2015}},
}

@article{7222,
  author       = {{Finke, A. and Ruth, M. and Scholz, S. and Ludwig, A. and Wieck, A. D. and Reuter, Dirk and Pawlis, A.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{3}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering}}},
  doi          = {{10.1103/physrevb.91.035409}},
  volume       = {{91}},
  year         = {{2015}},
}

@inproceedings{4018,
  author       = {{Brassat, Katharina and Brodehl, Christoph and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Self-assembled nanogap electrodes for the directed assembly of nanoparticles}}},
  year         = {{2015}},
}

@inproceedings{4019,
  author       = {{Brassat, Katharina and Brodehl, Christoph and Lindner, Jörg}},
  location     = {{Paderborn (Germany)}},
  title        = {{{Self-assembled Nanogap Electrodes in Microfluidic Channels}}},
  year         = {{2015}},
}

@inproceedings{4020,
  author       = {{Brodehl, Christoph and Riedl, Thomas and Greulich-Weber, Siegmund and Lindner, Jörg}},
  location     = {{Lille (France)}},
  title        = {{{Three-dimensional analysis of mask-clogging effects on the morphology of nanoparticles fabricated by nanosphere lithography}}},
  year         = {{2015}},
}

@inproceedings{4021,
  author       = {{Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}},
  location     = {{Paderborn}},
  title        = {{{How to create billions of tailored plasmonic nanoparticles in half an hour}}},
  year         = {{2015}},
}

@inproceedings{4022,
  author       = {{Drude, Dennis and Brassat, Katharina and Brodehl, Christoph and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Correlation between defect densities in colloidal nanosphere masks and experimental parameters}}},
  year         = {{2015}},
}

@article{4023,
  author       = {{Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}},
  issn         = {{1946-4274}},
  journal      = {{MRS Proceedings}},
  publisher    = {{Cambridge University Press (CUP)}},
  title        = {{{An Algorithm for Tailoring of Nanoparticles by Double Angle Resolved Nanosphere Lithography}}},
  doi          = {{10.1557/opl.2015.77}},
  volume       = {{1748}},
  year         = {{2015}},
}

@article{4024,
  abstract     = {{We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic strained cubic AlN layers on 
3C-SiC (001) substrates grown by means of molecular beam epitaxy. Surface morphologies of various QD sizes 
and densities were obtained from uncapped samples by atomic force microscopy. These results were correlated 
with similar but capped samples by photoluminescence experiments. The QD density varies by one order of 
magnitude from ~1x10^10 cm^-2 to ~1x10^11 cm^-2 as a function of the GaN coverage on the surface. The initial layer 
thickness for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers by a comparison 
between the experimental results and an analytical model. Our results reveal the strain-driven Stranski-Krastanov 
growth mode as the main formation process of the cubic GaN QDs.  }},
  author       = {{Bürger, M. and Lindner, Jörg and Reuter, Dirk and As, D. J.}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{4-5}},
  pages        = {{452--455}},
  publisher    = {{Wiley}},
  title        = {{{Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process}}},
  doi          = {{10.1002/pssc.201400132}},
  volume       = {{12}},
  year         = {{2015}},
}

@inproceedings{4026,
  author       = {{Garozzo, C. and Brassat, Katharina and La Magna, A.  and Puglisi, R.A.  and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Self-Arrangement of Colloidal Au Nanoparticles in SiO2-Nanopores fabricated by Block-Copolymer Lithography}}},
  year         = {{2015}},
}

@article{4027,
  abstract     = {{We report the influence of {111} stacking faults on the cathodoluminescence (CL) emission characteristics of
cubic GaN (c-GaN) films and cubic GaN/AlN multiquantum wells. Transmission electron microscopy
(TEM) measurements indicate that stacking faults (SFs) on the {111} planes are the predominant crystallographic
defects in epitaxial films, which were grown on 3CSiC/ Si (001) substrates by plasma-assisted molecular
beam epitaxy. The correlation of the SFs and the luminescence output is evidenced with a CL setup
integrated in a scanning TEM (STEM). By comparing the STEM images and the simultaneously measured CL
signals it is demonstrated that SFs in these films lead to a reduced CL emission intensity. Furthermore, the CL
emission intensity is shown to increase with increasing film thickness and decreasing SF density. This
correlation can be connected to the reduction of the full width at half maximum of X-ray diffraction rocking
curves with increasing film thickness of c-GaN films.}},
  author       = {{Kemper, R. M. and Veit, P. and Mietze, C. and Dempewolf, A. and Wecker, T. and Bertram, F. and Christen, J. and Lindner, Jörg and As, D. J.}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{4-5}},
  pages        = {{469--472}},
  publisher    = {{Wiley}},
  title        = {{{STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells}}},
  doi          = {{10.1002/pssc.201400154}},
  volume       = {{12}},
  year         = {{2015}},
}

@inproceedings{4029,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  location     = {{Berlin (Germany)}},
  title        = {{{Stability of heteroepitaxial coherent growth modes on nanowire radial surfaces}}},
  year         = {{2015}},
}