@article{7708, author = {{Sladkov, Maksym and Bakker, M. P. and Chaubal, A. U. and Reuter, Dirk and Wieck, A. D. and van der Wal, C. H.}}, issn = {{0034-6748}}, journal = {{Review of Scientific Instruments}}, number = {{4}}, publisher = {{AIP Publishing}}, title = {{{Polarization-preserving confocal microscope for optical experiments in a dilution refrigerator with high magnetic field}}}, doi = {{10.1063/1.3574217}}, volume = {{82}}, year = {{2011}}, } @article{7710, author = {{Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D. and Fischer, Saskia F.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Mode-filtered electron injection into a waveguide interferometer}}}, doi = {{10.1063/1.3563714}}, volume = {{98}}, year = {{2011}}, } @article{7711, author = {{Chen, Y. S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher, G.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{8}}, publisher = {{AIP Publishing}}, title = {{{Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil}}}, doi = {{10.1063/1.3553503}}, volume = {{98}}, year = {{2011}}, } @article{7712, author = {{Marquardt, B. and Geller, M. and Baxevanis, B. and Pfannkuche, D. and Wieck, A. D. and Reuter, Dirk and Lorke, A.}}, issn = {{2041-1723}}, journal = {{Nature Communications}}, number = {{1}}, publisher = {{Springer Nature}}, title = {{{Transport spectroscopy of non-equilibrium many-particle spin states in self-assembled quantum dots}}}, doi = {{10.1038/ncomms1205}}, volume = {{2}}, year = {{2011}}, } @article{7713, author = {{Jadczak, J and Bryja, L and Wójs, A and Bartsch, G and Yakovlev, D R and Bayer, M and Plochocka, P and Potemski, M and Reuter, Dirk and Wieck, A}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, publisher = {{IOP Publishing}}, title = {{{Strong temperature destabilization of free exciton recombination in a two-dimensional structures with hole gas}}}, doi = {{10.1088/1742-6596/334/1/012050}}, volume = {{334}}, year = {{2011}}, } @article{7714, author = {{Kurtze, H. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, number = {{4}}, pages = {{1165--1168}}, publisher = {{Wiley}}, title = {{{Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots}}}, doi = {{10.1002/pssc.201000791}}, volume = {{8}}, year = {{2011}}, } @article{7715, author = {{Lo, F-Y and Guo, J-Y and Ney, V and Ney, A and Chern, M-Y and Melnikov, A and Pezzagna, S and Reuter, Dirk and Wieck, A D and Massies, J}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, publisher = {{IOP Publishing}}, title = {{{Structural, optical, and magnetic properties of Ho-implanted GaN thin films}}}, doi = {{10.1088/1742-6596/266/1/012097}}, volume = {{266}}, year = {{2011}}, } @inproceedings{7716, author = {{Cerchez, M. and Tarasov, A. and Hugger, S. and Xu, Hengyi and Heinzel, T. and Zozoulenko, I. V. and Gasser-Szerer, U. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and Cheong, Hyeonsik}}, publisher = {{AIP}}, title = {{{Towards the quantized magnetic confinement in quantum wires}}}, doi = {{10.1063/1.3666392}}, year = {{2011}}, } @inproceedings{7717, author = {{Marquardt, Bastian and Geller, Martin and Baxevanis, Benjamin and Pfannkuche, Daniela and Wieck, Andreas D. and Reuter, Dirk and Lorke, Axel and Ihm, Jisoon and Cheong, Hyeonsik}}, publisher = {{AIP}}, title = {{{All-electrical transport spectroscopy of non-equilibrium many-particle states in self-assembled quantum dots}}}, doi = {{10.1063/1.3666398}}, year = {{2011}}, } @inproceedings{7718, author = {{van der Wal, C. H. and Sladkov, M. and Chaubal, A. U. and Bakker, M. P. and Onur, A. R. and Reuter, Dirk and Wieck, A. D. and Ihm, Jisoon and Cheong, Hyeonsik}}, publisher = {{AIP}}, title = {{{Electromagnetically induced transparency in low-doped n-GaAs}}}, doi = {{10.1063/1.3666734}}, year = {{2011}}, } @article{7719, author = {{Chen, Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{1}}, publisher = {{AIP Publishing}}, title = {{{Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil}}}, doi = {{10.1063/1.3530731}}, volume = {{109}}, year = {{2011}}, } @article{4544, abstract = {{The existence of localized vibrational modes both at the positive and at the negative LiNbO3 (0001) surface is demonstrated by means of first-principles calculations and Raman spectroscopy measurements. First, the phonon modes of the crystal bulk and of the (0001) surface are calculated within the density functional theory. In a second step, the Raman spectra of LiNbO3 bulk and of the two surfaces are measured. The phonon modes localized at the two surfaces are found to be substantially different, and are also found to differ from the bulk modes. The calculated and measured frequencies are in agreement within the error of the method. Raman spectroscopy is shown to be sensitive to differences between bulk and surface and between positive and negative surface. It represents therefore an alternative method to determine the surface polarity, which does not exploit the pyroelectric or piezoelectric properties of the material.}}, author = {{Sanna, S. and Berth, Gerhard and Hahn, W. and Widhalm, A. and Zrenner, Artur and Schmidt, W. G.}}, issn = {{0885-3010}}, journal = {{IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control}}, number = {{9}}, pages = {{1751--1756}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Vibrational properties of the LiNbO3 z-surfaces}}}, doi = {{10.1109/tuffc.2011.2012}}, volume = {{58}}, year = {{2011}}, } @article{4545, abstract = {{Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface.}}, author = {{Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{10}}, publisher = {{IOP Publishing}}, title = {{{In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy}}}, doi = {{10.1088/0268-1242/26/10/105023}}, volume = {{26}}, year = {{2011}}, } @inproceedings{4546, abstract = {{Silicon oxynitride (SiON) layers for telecommunication device application are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow and enhancement of the PECVD deposition temperature, the absorption loss due to NH bands can be nearly completely erased. Furthermore the surface roughness can be reduced by decreasing the gas flow and rising the deposition temperature. First waveguide structures are introduced and their characterization is presented.}}, author = {{Frers, Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm, Alex and Zrenner, Artur}}, booktitle = {{2011 Semiconductor Conference Dresden}}, isbn = {{9781457704314}}, location = {{Dresden, Germany}}, publisher = {{IEEE}}, title = {{{Characterization of SiON integrated waveguides via FTIR and AFM measurements}}}, doi = {{10.1109/scd.2011.6068744}}, year = {{2011}}, } @article{7311, author = {{Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D. and Stromberg, Frank and Keune, Werner and Wende, Heiko}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{5}}, publisher = {{AIP Publishing}}, title = {{{Room temperature spin relaxation length in spin light-emitting diodes}}}, doi = {{10.1063/1.3622662}}, volume = {{99}}, year = {{2011}}, } @article{7335, author = {{Krenner, Hubert J. and Völk, Stefan and Schülein, Florian J. R. and Knall, Florian and Wixforth, Achim and Reuter, Dirk and Wieck, Andreas D. and Kim, Hyochul and Truong, Tuan A. and Petroff, Pierre M.}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, number = {{2}}, pages = {{407--410}}, publisher = {{Wiley}}, title = {{{Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts}}}, doi = {{10.1002/pssc.201100236}}, volume = {{9}}, year = {{2011}}, } @article{4140, abstract = {{In this paper we report on the successful reduction of tensile strain in a thin strained ion-beam synthesized 3C-SiC(1 1 1) layer on silicon. The creation of a near-interface defect structure consisting of nanometric voids and stacking fault type defects by He ion implantation and subsequent annealing yields significant relaxation in the top SiC film. The microstructure of the defect layer is studied by transmission electron microscopy, and the strain state of the 3C-SiC layer was studied by high-resolution X-ray diffraction in a parallel beam configuration. Typical process conditions for the growth of GaN films on the SiC layer were emulated by high temperature treatments in a rapid thermal annealer or a quartz tube furnace. It is found that prolonged annealing at high temperatures leads to ripening of the voids and to a weaker reduction of the tensile strain. It is shown that this problem can be overcome by the co-implantation of oxygen ions to form highly thermally stable void/extended defect structures.}}, author = {{Häberlen, M. and Murphy, B. and Stritzker, B. and Lindner, Jörg}}, issn = {{0168-583X}}, journal = {{Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}}, pages = {{322--325}}, publisher = {{Elsevier BV}}, title = {{{Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering}}}, doi = {{10.1016/j.nimb.2011.01.092}}, volume = {{272}}, year = {{2011}}, } @article{4142, abstract = {{This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized 3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a near-interface defect structure containing nanometric voids and dislocation loops by the implantation of He ions and subsequent thermal annealing. The structural features of this defect microstructure are investigated by transmission electron microscopy. High-resolution X-ray diffraction in a parallel beam configuration is used to quantify the strain state of the top SiC layer. Further annealing experiments were carried out in order to emulate typical process conditions for the growth of wide-bandgap semiconductors like, for example GaN. It is found that prolonged annealing at elevated temperatures leads to coarsening of the voids and to a much less efficient strain reduction. We show that this issue can be resolved by the co-implantation of oxygen to form highly thermally stable cavity/extended defect structures. The technique presented here may be useful for a variety of other thermally mismatched bulk/thin film couples as well.}}, author = {{Häberlen, Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, number = {{3}}, pages = {{944--947}}, publisher = {{Wiley}}, title = {{{Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}}}, doi = {{10.1002/pssc.201000342}}, volume = {{8}}, year = {{2011}}, } @article{4148, abstract = {{Photoluminescence spectra of Sm^(2+)-doped BaBr^2 have been measured under hydrostatic pressures up to 17 GPa at room temperature. In the low pressure range a red-shift of the broad 5d–4f transition of -145 cm^(-1)/GPa is observed. From 5 to 8 GPa a phase mixtureof the initial orthorhombic phase and the high-pressure monoclinic phase gives rise to two 5d–4f bands, which are strongly overlapping. Above 8 GPa the crystalis completely transformed to its high-pressure phase where two different Sm2^(2+) sites exist, but only one broad 5d–4f transition is detected. It exhibits are d-shift of -36 cm^(-1)/GPa. In addition,the line shifts of the (_^5)D_0→(_^7)F_J (J=0,1,2) transitions are investigated. Linear shifts of -19cm^(-1)/GPa for J=0,2 and of -13cm^(-1)/GPa for J01 are observed in the pressure range from 0 to 5 GPa.}}, author = {{Wiegand, Marie Christin and Sievers, Werner and Lindner, Jörg and Tröster, Th. and Schweizer, S.}}, issn = {{0022-2313}}, journal = {{Journal of Luminescence}}, number = {{11}}, pages = {{2400--2403}}, publisher = {{Elsevier BV}}, title = {{{Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure}}}, doi = {{10.1016/j.jlumin.2011.05.035}}, volume = {{131}}, year = {{2011}}, } @article{4150, abstract = {{Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and first-principlesmethods are presented. The calculations aim at a comprehensive,microscopic understanding of the precipitation mechanism in the context of controversial discussions in the literature. For the quantum-mechanical treatment, basic processes assumed in the precipitation process are calculated in feasible systems of small size. The migration mechanism of a carbon 100 interstitial and silicon 11 0 self-interstitial in otherwise defect-free silicon are investigated using density functional theory calculations. The influence of a nearby vacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been investigated systematically. Interactions of various combinations of defects have been characterized including a couple of selected migration pathways within these configurations. Most of the investigated pairs of defects tend to agglomerate allowing for a reduction in strain. The formation of structures involving strong carbon–carbon bonds turns out to be very unlikely. In contrast, substitutional carbon occurs in all probability. A long range capture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A rather small capture radius is predicted for substitutional carbon and silicon self-interstitials. Initial assumptions regarding the precipitation mechanism of silicon carbide in bulk silicon are established and conformability to experimental findings is discussed. Furthermore, results of the accurate first-principles calculations on defects and carbon diffusion in silicon are compared to results of classical potential simulations revealing significant limitations of the latter method. An approach to work around this problem is proposed. Finally, results of the classical potential molecular dynamics simulations of large systems are examined, which reinforce previous assumptions and give further insight into basic processes involved in the silicon carbide transition.}}, author = {{Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{6}}, publisher = {{American Physical Society (APS)}}, title = {{{Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon}}}, doi = {{10.1103/physrevb.84.064126}}, volume = {{84}}, year = {{2011}}, }