@misc{4171, abstract = {{The method involves exciting a quantum system with photons in a polarization state. Two states of the quantum system are excited with linear horizontal and vertical polarizations that are orthogonal to each other, where the states exhibit an energetic gap smaller than energetic bandwidth of photons. The states are assigned based on the polarizations, where the quantum system is arranged in a superposition state. The quantum system is formed by a quantum bit that is formed as a two-level system.}}, author = {{Förstner, Jens and Mantei, D. and de Vasconcellos, S. Michaelis and Zrenner, Artur}}, keywords = {{tet_topic_qd}}, title = {{{Method for transmission of information about polarization state of photons to stationary system}}}, year = {{2011}}, } @article{4377, abstract = {{Confocal Raman spectroscopy was performed as an archetype imaging method to study the ferroelectric domain structure of periodically poled lithium niobate. More precisely, the linkage out of spatial resolution and spectral information proved itself as very useful. Here a specific modulation of the Raman lines by the local variation of polarity and a non-symmetric measuring-signal across the domain structure were found, which allows for imaging of domain boundaries as well as oppositely orientated domains. The high potential of this method is demonstrated by the visualization of the ferroelectric domain structures based on various phonon modes.}}, author = {{Berth, Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna, Simone and Schmidt, Wolf Gero}}, issn = {{0015-0193}}, journal = {{Ferroelectrics}}, keywords = {{Raman spectroscopy, ferroelectric domains, LiNbO3, confocal imaging}}, number = {{1}}, pages = {{44--48}}, publisher = {{Informa UK Limited}}, title = {{{Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}}}, doi = {{10.1080/00150193.2011.594774}}, volume = {{420}}, year = {{2011}}, } @article{4378, abstract = {{Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed.}}, author = {{Mehta, Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Zrenner, Artur and Meier, Cedrik}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, keywords = {{molecular beam epitaxy, quantum dot, site control, electroluminescence}}, number = {{4}}, pages = {{1182--1185}}, publisher = {{Wiley}}, title = {{{Electrically driven intentionally positioned single quantum dot}}}, doi = {{10.1002/pssc.201000828}}, volume = {{8}}, year = {{2011}}, } @article{4379, abstract = {{Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers with an off orientation of 6º towards < 111> by means of electrochemical etching in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial growth of III–V compound semiconductor stacks on their top for the production of multi-junction solar cells and very thin electronic devices. We demonstrate transfer of porous layers after an annealing process in hydrogen atmosphere. Electron Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis shows a decrease in the Raman signal intensity after etching and a subsequent increase after annealing while no shift is observed. By means of Atomic Force Microscopy, analysis the surface appearance after the etching and annealing steps can be visualized. The mean surface roughness varies during the process from 0.55 nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing. The decrease of average roughness after etching is caused by an electropolishing step prior to porous formation. Despite of slight increase of mean surface roughness after annealing the samples are still appropriate for high quality epitaxial growth and subsequent lift-off.}}, author = {{Garralaga Rojas, E. and Terheiden, B. and Plagwitz, H. and Hensen, J. and Wiedemeier, V. and Berth, Gerhard and Zrenner, Artur and Brendel, R.}}, issn = {{0040-6090}}, journal = {{Thin Solid Films}}, keywords = {{Porous Si, Layer transfer, Thin-film, Photovoltaics}}, number = {{1}}, pages = {{606--609}}, publisher = {{Elsevier BV}}, title = {{{Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)}}}, doi = {{10.1016/j.tsf.2011.07.063}}, volume = {{520}}, year = {{2011}}, } @article{1723, author = {{Utikal, Tobias and Zentgraf, Thomas and Tikhodeev, Sergei G. and Lippitz, Markus and Giessen, Harald}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{7}}, publisher = {{American Physical Society (APS)}}, title = {{{Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices}}}, doi = {{10.1103/physrevb.84.075101}}, volume = {{84}}, year = {{2011}}, } @article{1724, author = {{Gharghi, Majid and Gladden, Christopher and Zentgraf, Thomas and Liu, Yongmin and Yin, Xiaobo and Valentine, Jason and Zhang, Xiang}}, issn = {{1530-6984}}, journal = {{Nano Letters}}, number = {{7}}, pages = {{2825--2828}}, publisher = {{American Chemical Society (ACS)}}, title = {{{A Carpet Cloak for Visible Light}}}, doi = {{10.1021/nl201189z}}, volume = {{11}}, year = {{2011}}, } @article{16110, author = {{Jotzu, Gregor and Bartley, Tim and Coldenstrodt-Ronge, Hendrik B. and Smith, Brian J. and Walmsley, Ian A.}}, issn = {{0950-0340}}, journal = {{Journal of Modern Optics}}, pages = {{42--45}}, title = {{{Continuous phase stabilization and active interferometer control using two modes}}}, doi = {{10.1080/09500340.2011.621033}}, year = {{2011}}, } @article{7495, author = {{Urbanski, Martin and Piegdon, Karoline A. and Meier, Cedrik and Kitzerow, Heinz-Siegfried}}, issn = {{0267-8292}}, journal = {{Liquid Crystals}}, number = {{4}}, pages = {{475--482}}, publisher = {{Informa UK Limited}}, title = {{{Investigations on the director field around microdisc resonators}}}, doi = {{10.1080/02678292.2011.552742}}, volume = {{38}}, year = {{2011}}, } @article{4146, abstract = {{The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy.}}, author = {{Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and Lindner, Jörg and As, Donat}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{12}}, publisher = {{AIP Publishing}}, title = {{{Anti-phase domains in cubic GaN}}}, doi = {{10.1063/1.3666050}}, volume = {{110}}, year = {{2011}}, } @article{29677, author = {{Helmstedt, Andreas and Müller, Norbert and Gryzia, Aaron and Dohmeier, Niklas and Brechling, Armin and Sacher, Marc and Heinzmann, Ulrich and Hoeke, Veronika and Krickemeyer, Erich and Glaser, Thorsten and Bouvron, Samuel and Fonin, Mikhail and Neumann, Manfred}}, issn = {{0953-8984}}, journal = {{Journal of Physics: Condensed Matter}}, keywords = {{Condensed Matter Physics, General Materials Science}}, number = {{26}}, publisher = {{IOP Publishing}}, title = {{{Spin resolved photoelectron spectroscopy of [Mn6IIICrIII]3 +single-molecule magnets and of manganese compounds as reference layers}}}, doi = {{10.1088/0953-8984/23/26/266001}}, volume = {{23}}, year = {{2011}}, } @article{29676, author = {{Helmstedt, Andreas and Sacher, Marc and Gryzia, Aaron and Harder, Alexander and Brechling, Armin and Müller, Norbert and Heinzmann, Ulrich and Hoeke, Veronika and Krickemeyer, Erich and Glaser, Thorsten and Bouvron, Samuel and Fonin, Mikhail}}, issn = {{0368-2048}}, journal = {{Journal of Electron Spectroscopy and Related Phenomena}}, keywords = {{Physical and Theoretical Chemistry, Spectroscopy, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Radiation, Electronic, Optical and Magnetic Materials}}, number = {{11-12}}, pages = {{583--588}}, publisher = {{Elsevier BV}}, title = {{{Exposure of [MnIII6CrIII]3+ single-molecule magnets to soft X-rays: The effect of the counterions on radiation stability}}}, doi = {{10.1016/j.elspec.2011.11.002}}, volume = {{184}}, year = {{2011}}, } @article{40177, author = {{Regensburger, Alois and Bersch, Christoph and Hinrichs, Benjamin and Onishchukov, Georgy and Schreiber, Andreas and Silberhorn, Christine and Peschel, Ulf}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, keywords = {{General Physics and Astronomy}}, number = {{23}}, publisher = {{American Physical Society (APS)}}, title = {{{Photon Propagation in a Discrete Fiber Network: An Interplay of Coherence and Losses}}}, doi = {{10.1103/physrevlett.107.233902}}, volume = {{107}}, year = {{2011}}, } @article{40178, author = {{Schreiber, A. and Cassemiro, K. N. and Potoček, V. and Gábris, A. and Jex, I. and Silberhorn, Christine}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, keywords = {{General Physics and Astronomy}}, number = {{18}}, publisher = {{American Physical Society (APS)}}, title = {{{Decoherence and Disorder in Quantum Walks: From Ballistic Spread to Localization}}}, doi = {{10.1103/physrevlett.106.180403}}, volume = {{106}}, year = {{2011}}, } @article{40180, author = {{Laiho, K. and Christ, A. and Cassemiro, K. N. and Silberhorn, Christine}}, issn = {{0146-9592}}, journal = {{Optics Letters}}, keywords = {{Atomic and Molecular Physics, and Optics}}, number = {{8}}, publisher = {{The Optical Society}}, title = {{{Testing spectral filters as Gaussian quantum optical channels}}}, doi = {{10.1364/ol.36.001476}}, volume = {{36}}, year = {{2011}}, } @article{40182, author = {{Söller, Christoph and Cohen, Offir and Smith, Brian J. and Walmsley, Ian A. and Silberhorn, Christine}}, issn = {{1050-2947}}, journal = {{Physical Review A}}, keywords = {{Atomic and Molecular Physics, and Optics}}, number = {{3}}, publisher = {{American Physical Society (APS)}}, title = {{{High-performance single-photon generation with commercial-grade optical fiber}}}, doi = {{10.1103/physreva.83.031806}}, volume = {{83}}, year = {{2011}}, } @article{40186, author = {{Eckstein, Andreas and Christ, Andreas and Mosley, Peter J. and Silberhorn, Christine}}, issn = {{1862-6351}}, journal = {{physica status solidi c}}, keywords = {{Condensed Matter Physics}}, number = {{4}}, pages = {{1216--1219}}, publisher = {{Wiley}}, title = {{{Realistic g (2) measurement of a PDC source with single photon detectors in the presence of background}}}, doi = {{10.1002/pssc.201000876}}, volume = {{8}}, year = {{2011}}, } @article{40187, author = {{Eckstein, Andreas and Christ, Andreas and Mosley, Peter J. and Silberhorn, Christine}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, keywords = {{General Physics and Astronomy}}, number = {{1}}, publisher = {{American Physical Society (APS)}}, title = {{{Highly Efficient Single-Pass Source of Pulsed Single-Mode Twin Beams of Light}}}, doi = {{10.1103/physrevlett.106.013603}}, volume = {{106}}, year = {{2011}}, } @article{40183, author = {{Christ, Andreas and Laiho, Kaisa and Eckstein, Andreas and Cassemiro, Katiúscia N and Silberhorn, Christine}}, issn = {{1367-2630}}, journal = {{New Journal of Physics}}, keywords = {{General Physics and Astronomy}}, number = {{3}}, publisher = {{IOP Publishing}}, title = {{{Probing multimode squeezing with correlation functions}}}, doi = {{10.1088/1367-2630/13/3/033027}}, volume = {{13}}, year = {{2011}}, } @article{40190, author = {{Rohde, Peter P and Schreiber, Andreas and Štefaňák, Martin and Jex, Igor and Silberhorn, Christine}}, issn = {{1367-2630}}, journal = {{New Journal of Physics}}, keywords = {{General Physics and Astronomy}}, number = {{1}}, publisher = {{IOP Publishing}}, title = {{{Multi-walker discrete time quantum walks on arbitrary graphs, their properties and their photonic implementation}}}, doi = {{10.1088/1367-2630/13/1/013001}}, volume = {{13}}, year = {{2011}}, } @inproceedings{4312, abstract = {{The intensity dependence of optically-induced injection currents in semiconductor quantum wells is investigated numerically. Oscillatory behavior of the electron charge current transients as function of intensity and time is predicted and explained.}}, author = {{Pochwala, Michal and Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}}, booktitle = {{CLEO:2011 - Laser Applications to Photonic Applications}}, isbn = {{9781557529107}}, issn = {{2160-8989 }}, keywords = {{tet_topic_qw}}, location = {{Baltimore, Maryland (USA)}}, publisher = {{Optical Society of America}}, title = {{{Intensity dependence of optically-induced injection currents in semiconductor quantum wells}}}, doi = {{10.1364/qels.2011.qmk4}}, year = {{2011}}, }