@article{7987, author = {{Marquardt, Bastian and Geller, Martin and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, number = {{10}}, pages = {{2598--2601}}, publisher = {{Elsevier BV}}, title = {{{A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs}}}, doi = {{10.1016/j.physe.2010.02.010}}, volume = {{42}}, year = {{2010}}, } @article{7988, author = {{Lei, Wen and Notthoff, Christian and Peng, Jie and Reuter, Dirk and Wieck, Andreas and Bester, Gabriel and Lorke, Axel}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, number = {{17}}, publisher = {{American Physical Society (APS)}}, title = {{{“Artificial Atoms” in Magnetic Fields: Wave-Function Shaping and Phase-Sensitive Tunneling}}}, doi = {{10.1103/physrevlett.105.176804}}, volume = {{105}}, year = {{2010}}, } @article{7989, author = {{Kreisbeck, Christoph and Kramer, Tobias and Buchholz, Sven S. and Fischer, Saskia F. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{16}}, publisher = {{American Physical Society (APS)}}, title = {{{Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers}}}, doi = {{10.1103/physrevb.82.165329}}, volume = {{82}}, year = {{2010}}, } @article{7990, author = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{14}}, publisher = {{AIP Publishing}}, title = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}}, doi = {{10.1063/1.3488812}}, volume = {{97}}, year = {{2010}}, } @article{7991, author = {{Reuter, Dirk and Roescu, R and Zeitler, U and Maan, J C and Wieck, A D}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, publisher = {{IOP Publishing}}, title = {{{Capacitance-voltage spectroscopy on InAs quantum dot valence band states in tilted magnetic fields}}}, doi = {{10.1088/1742-6596/245/1/012043}}, volume = {{245}}, year = {{2010}}, } @article{7992, author = {{Rizo, P J and Pugzlys, A and Slachter, A and Denega, S Z and Reuter, Dirk and Wieck, A D and van Loosdrecht, P H M and van der Wal, C H}}, issn = {{1367-2630}}, journal = {{New Journal of Physics}}, number = {{11}}, publisher = {{IOP Publishing}}, title = {{{Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system}}}, doi = {{10.1088/1367-2630/12/11/113040}}, volume = {{12}}, year = {{2010}}, } @article{4548, abstract = {{A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane, copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the latter species with O2 was investigated at room temperature. The actual quenching process via O2 gassing was studied and an exponential dependence of the fluorescence intensity with respect to the complex concentration was observed. Furthermore the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I] in a wider concentration range. The applicability of this complex for O2 sensing inside a microreactor system was proven by confocal fluorescence measurements. It was shown that the investigated system can be used for oxygen sensing in the copper concentration range from 10−2 to 10−9 mol/l.}}, author = {{Herres-Pawlis, Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner, Artur and Warnecke, Hans-Joachim}}, issn = {{0022-2313}}, journal = {{Journal of Luminescence}}, keywords = {{Copper Oxygen Fluorescence quenching N donor ligands}}, number = {{10}}, pages = {{1958--1962}}, publisher = {{Elsevier BV}}, title = {{{Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}}}, doi = {{10.1016/j.jlumin.2010.05.012}}, volume = {{130}}, year = {{2010}}, } @article{4549, abstract = {{Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point.}}, author = {{Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{7}}, publisher = {{IOP Publishing}}, title = {{{Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}}}, doi = {{10.1088/0268-1242/25/7/075003}}, volume = {{25}}, year = {{2010}}, } @article{4550, abstract = {{We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.}}, author = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{14}}, publisher = {{AIP Publishing}}, title = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}}, doi = {{10.1063/1.3488812}}, volume = {{97}}, year = {{2010}}, } @article{4551, abstract = {{An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.}}, author = {{Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{Molecular beam epitaxy, Focused ion beam, Self-assembled quantum dot, Electroluminescence}}, number = {{10}}, pages = {{2749--2752}}, publisher = {{Elsevier BV}}, title = {{{Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}}}, doi = {{10.1016/j.physe.2009.12.053}}, volume = {{42}}, year = {{2010}}, } @article{4552, abstract = {{Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm.}}, author = {{Panfilova, M. and Michaelis de Vasconcellos, S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{CdSe/ZnSe quantum dots, Photodiode, Quantum confined Stark Effect, Photocurrent, II–VI Semiconductors}}, number = {{10}}, pages = {{2521--2523}}, publisher = {{Elsevier BV}}, title = {{{Resonant photocurrent-spectroscopy of individual CdSe quantum dots}}}, doi = {{10.1016/j.physe.2010.01.013}}, volume = {{42}}, year = {{2010}}, } @inproceedings{7251, author = {{Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf, Thomas and Zhang, Xiang}}, booktitle = {{Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}}, editor = {{Stockman, Mark I.}}, publisher = {{SPIE}}, title = {{{Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems}}}, doi = {{10.1117/12.860190}}, year = {{2010}}, } @inproceedings{7252, author = {{Sorger, Volker J. and Oulton, Rupert F. and Zentgraf, Thomas and Ma, Renmin and Gladden, Christopher and Dai, Lun and Bartal, Guy and Zhang, Xiang}}, booktitle = {{Plasmonics: Metallic Nanostructures and Their Optical Properties VIII}}, editor = {{Stockman, Mark I.}}, publisher = {{SPIE}}, title = {{{Semiconductor plasmon laser}}}, doi = {{10.1117/12.859136}}, year = {{2010}}, } @article{7494, author = {{Mehta, M. and Meier, Cedrik}}, issn = {{0013-4651}}, journal = {{Journal of The Electrochemical Society}}, number = {{2}}, publisher = {{The Electrochemical Society}}, title = {{{Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals}}}, doi = {{10.1149/1.3519999}}, volume = {{158}}, year = {{2010}}, } @article{7496, author = {{Theis, Jens and Geller, Martin and Lorke, Axel and Wiggers, Hartmut and Wieck, Andreas and Meier, Cedrik}}, issn = {{0957-4484}}, journal = {{Nanotechnology}}, number = {{45}}, publisher = {{IOP Publishing}}, title = {{{Electroluminescence from silicon nanoparticles fabricated from the gas phase}}}, doi = {{10.1088/0957-4484/21/45/455201}}, volume = {{21}}, year = {{2010}}, } @article{4129, abstract = {{We study a single quantum dot molecule doped with one electron in the presence of electron-phonon coupling. Both diagonal and off-diagonal interactions representing real and virtual processes with acoustic phonons via deformation potential and piezoelectric coupling are taken into account. We employ a non-perturbative quantum kinetic theory and show that the phonon-mediated relaxation is dominated by an electron tunneling on a picosecond time scale.A dependence of the relaxation on the temperature and the strength of the tunneling coupling is analyzed.}}, author = {{Grodecka-Grad, Anna and Förstner, Jens}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, keywords = {{tet_topic_qd}}, publisher = {{IOP Publishing}}, title = {{{Phonon-mediated relaxation in doped quantum dot molecules}}}, doi = {{10.1088/1742-6596/245/1/012035}}, volume = {{245}}, year = {{2010}}, } @article{4144, abstract = {{Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques.}}, author = {{Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }}, issn = {{0022-0248}}, journal = {{Journal of Crystal Growth}}, number = {{1}}, pages = {{84--87}}, publisher = {{Elsevier BV}}, title = {{{Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}}}, doi = {{10.1016/j.jcrysgro.2010.12.042}}, volume = {{323}}, year = {{2010}}, } @article{4153, abstract = {{Nanosphere lithography (NSL) masks consisting of mono- or double-layers of polystyrene (PS) nano-beads are fabricated on silicon exploiting the self-organization of PS particles during the controlled drying of a colloidal suspension on a surface. The shape changes and shrinkage of PS sphere masks upon treatment in an air plasma are studied as a function of initial sphere size, plasma power and treatment time. The influence of several experimental parameters, including the plasma induced temperature rise, are analysed using scanning and transmission electron microscopy. It is demonstrated that a variety of new intriguing nanopatterns can be generated on silicon surfaces by the combination of NSL and plasma techniques, largely broadening the variety of patterns available so far by NSL.}}, author = {{Gogel, D. and Weinl, M. and Lindner, Jörg and Stritzker, B.}}, journal = {{JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}}, number = {{3}}, pages = {{740--744}}, title = {{{Plasma modification of nanosphere lithography masks made of polystyrene beads}}}, volume = {{12}}, year = {{2010}}, } @article{4174, abstract = {{A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrierphonon couplings is studied by means of a nonperturbative quantum kinetic theory. The interaction with acoustic phonons by deformation potential and piezoelectric coupling is taken into account. We show that the phonon-mediated relaxation is fast on a picosecond time scale and is dominated by the usually neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted electron tunneling. We show that in the parameter regime of current electrical and optical experiments, the microscopic non-Markovian theory has to be employed.}}, author = {{Grodecka-Grad, A. and Förstner, Jens}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, keywords = {{tet_topic_qd}}, number = {{11}}, publisher = {{American Physical Society (APS)}}, title = {{{Theory of phonon-mediated relaxation in doped quantum dot molecules}}}, doi = {{10.1103/physrevb.81.115305}}, volume = {{81}}, year = {{2010}}, } @article{4194, abstract = {{A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.}}, author = {{Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{25}}, publisher = {{AIP Publishing}}, title = {{{Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}}}, doi = {{10.1063/1.3455066}}, volume = {{96}}, year = {{2010}}, }