@article{7498, author = {{Lei, Wen and Notthoff, Christian and Offer, Matthias and Meier, Cedrik and Lorke, Axel and Jagadish, Chennupati and Wieck, Andreas D.}}, issn = {{0884-2914}}, journal = {{Journal of Materials Research}}, number = {{07}}, pages = {{2179--2184}}, publisher = {{Cambridge University Press (CUP)}}, title = {{{Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation}}}, doi = {{10.1557/jmr.2009.0293}}, volume = {{24}}, year = {{2009}}, } @article{7499, author = {{Huba, K. and Krix, D. and Meier, Cedrik and Nienhaus, H.}}, issn = {{0734-2101}}, journal = {{Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}}, number = {{4}}, pages = {{889--894}}, publisher = {{American Vacuum Society}}, title = {{{Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers}}}, doi = {{10.1116/1.3100218}}, volume = {{27}}, year = {{2009}}, } @article{8578, author = {{Wilde, M. A. and Reuter, Dirk and Heyn, Ch. and Wieck, A. D. and Grundler, D.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, title = {{{Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system}}}, doi = {{10.1103/physrevb.79.125330}}, year = {{2009}}, } @article{8579, author = {{Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}}}, doi = {{10.1063/1.3069281}}, year = {{2009}}, } @article{8580, author = {{Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}}}, doi = {{10.1063/1.3072366}}, year = {{2009}}, } @article{8581, author = {{Greilich, A. and Spatzek, S. and Yugova, I. A. and Akimov, I. A. and Yakovlev, D. R. and Efros, Al. L. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, title = {{{Collective single-mode precession of electron spins in an ensemble of singly charged (In,Ga)As/GaAs quantum dots}}}, doi = {{10.1103/physrevb.79.201305}}, year = {{2009}}, } @article{8582, author = {{Greilich, A. and Economou, Sophia E. and Spatzek, S. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Reinecke, T. L. and Bayer, M.}}, issn = {{1745-2473}}, journal = {{Nature Physics}}, pages = {{262--266}}, title = {{{Ultrafast optical rotations of electron spins in quantum dots}}}, doi = {{10.1038/nphys1226}}, year = {{2009}}, } @article{8583, author = {{Yugova, I. A. and Sokolova, A. A. and Yakovlev, D. R. and Greilich, A. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}}, issn = {{0031-9007}}, journal = {{Physical Review Letters}}, title = {{{Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons}}}, doi = {{10.1103/physrevlett.102.167402}}, year = {{2009}}, } @article{8584, author = {{Wilde, M. A. and Reuter, Dirk and Heyn, Ch. and Wieck, A. D. and Grundler, D.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, title = {{{Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system}}}, doi = {{10.1103/physrevb.79.125330}}, year = {{2009}}, } @article{8585, author = {{Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}}}, doi = {{10.1063/1.3175724}}, year = {{2009}}, } @article{8586, author = {{Völk, S. and Wixforth, A. and Reuter, Dirk and Wieck, A. D. and Ebbecke, J.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, title = {{{Conversion of bound excitons to free excitons by surface acoustic waves}}}, doi = {{10.1103/physrevb.80.165307}}, year = {{2009}}, } @article{8587, author = {{Auer, T. and Oulton, R. and Bauschulte, A. and Yakovlev, D. R. and Bayer, M. and Verbin, S. Yu. and Cherbunin, R. V. and Reuter, Dirk and Wieck, A. D.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, title = {{{Measurement of the Knight field and local nuclear dipole-dipole field in an InGaAs/GaAs quantum dot ensemble}}}, doi = {{10.1103/physrevb.80.205303}}, year = {{2009}}, } @article{8588, author = {{Fischer, S F and Deborde, J L and Kunze, U and Reuter, Dirk and Wieck, A D}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, title = {{{Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures}}}, doi = {{10.1088/1742-6596/193/1/012043}}, year = {{2009}}, } @article{8589, author = {{Fischer, S F and Deborde, J L and Kunze, U and Reuter, Dirk and Wieck, A D}}, issn = {{1742-6596}}, journal = {{Journal of Physics: Conference Series}}, title = {{{Lateral electron tunnelling spectroscopy in etched GaAs/AlGaAs-based nanostructures}}}, doi = {{10.1088/1742-6596/193/1/012043}}, year = {{2009}}, } @article{8591, author = {{Cerchez, M. and Heinzel, T. and Reuter, Dirk and Wieck, A.D.}}, issn = {{0749-6036}}, journal = {{Superlattices and Microstructures}}, pages = {{723--727}}, title = {{{Magnetic barrier in a two-dimensional hole gas}}}, doi = {{10.1016/j.spmi.2009.07.016}}, year = {{2009}}, } @article{8592, author = {{Kurtze, H. and Seebeck, J. and Gartner, P. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M. and Jahnke, F.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, title = {{{Carrier relaxation dynamics in self-assembled semiconductor quantum dots}}}, doi = {{10.1103/physrevb.80.235319}}, year = {{2009}}, } @article{4152, abstract = {{A novel technique to form periodically nanostructured Si surface morphologies based on nanosphere lithography (NSL) and He ion implantation induced swelling is studied in detail. It is shown that by implantation of keV He ions through the nanometric openings of NSL masks regular arrays of hillocks and rings can be created on silicon surfaces. The shape and size of these surface features can be easily controlled by adjusting the ion dose and energy as well as the mask size. Feature heights of more than 100 nm can be obtained, while feature distances are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy measurements of the surface morphology are supplemented by cross-sectional transmission electron microscopy, revealing the inner structure of hillocks to consist of a central cavity surrounded by a hierarchical arrangement of smaller voids. The surface morphologies developed here have the potential to be useful for fixing and separating nano-objects on a silicon surface.}}, author = {{Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg and Stritzker, Bernd}}, issn = {{1946-4274}}, journal = {{MRS Proceedings}}, location = {{San Franicsco (USA)}}, publisher = {{Cambridge University Press (CUP)}}, title = {{{Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks}}}, doi = {{10.1557/proc-1181-dd10-02}}, volume = {{1181}}, year = {{2009}}, } @article{4182, abstract = {{We demonstrate that an optically driven spin of a carrier in a quantum dot undergoes indirect dephasing via conditional optically induced charge evolution even in the absence of any direct interaction between the spin and its environment. A generic model for the indirect dephasing with a three-component system with spin, charge, and reservoir is proposed. This indirect decoherence channel is studied for the optical spin manipulation in a quantum dot with a microscopic description of the charge-phonon interaction taking into account its non-Markovian nature.}}, author = {{Grodecka, A. and Machnikowski, P. and Förstner, Jens}}, issn = {{1050-2947}}, journal = {{Physical Review A}}, keywords = {{tet_topic_qd}}, number = {{4}}, publisher = {{American Physical Society (APS)}}, title = {{{Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots}}}, doi = {{10.1103/physreva.79.042331}}, volume = {{79}}, year = {{2009}}, } @article{4192, abstract = {{Buried ion beam synthesized 3C-SiC layers were revealed to the surface of silicon wafers to provide lattice matched substrates for GaN thin film epitaxy. Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six- or four-fold crystal symmetry, respectively, were formed. GaN thin film growth was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing to the energy and momentum transfer of the ions – allows to deposit epitaxial thin films at particularly low growth temperatures where both the stable hexagonal and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can be grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga rich growth conditions seem to stabilize the formation of the cubic polytype. It is obvious from XTEM studies that the high density of crystal defects in the SiC layer is not transferred onto the growing GaN films and that the crystalline quality of GaN films improves with increasing film thickness. The influence of surface roughness and wettability, interfacial cavities and the nucleation of twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN thin films is discussed.}}, author = {{Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}}, issn = {{0022-0248}}, journal = {{Journal of Crystal Growth}}, number = {{6}}, pages = {{762--769}}, publisher = {{Elsevier BV}}, title = {{{Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si}}}, doi = {{10.1016/j.jcrysgro.2009.12.048}}, volume = {{312}}, year = {{2009}}, } @article{4196, abstract = {{The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface.}}, author = {{Tschumak, Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}}, issn = {{1862-6351}}, journal = {{physica status solidi (c)}}, number = {{1}}, pages = {{104--107}}, publisher = {{Wiley}}, title = {{{Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}}}, doi = {{10.1002/pssc.200982615}}, volume = {{7}}, year = {{2009}}, }