@article{18632, abstract = {{We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain.}}, author = {{Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}}, issn = {{1077-3118}}, journal = {{Applied Physics Letters}}, number = {{18}}, publisher = {{American Institute of Physics}}, title = {{{Measurement of effective electron mass in biaxial tensile strained silicon on insulator}}}, doi = {{10.1063/1.3254330}}, volume = {{95}}, year = {{2009}}, } @inproceedings{18634, abstract = {{A computational method to obtain optical conductivities from first principles is presented. It exploits a relation between the conductivity and the complex dielectric function, which is constructed from the full electronic band structure within the random-phase approximation. In contrast to the Drude model, no empirical parameters are used. As interband transitions as well as local-field effects are properly included, the calculated spectra are valid over a wide frequency range. As an illustration I present quantitative results for selected simple metals, noble metals, and ferromagnetic transition metals. The implementation is based on the full-potential linearized augmented-plane-wave method.}}, author = {{Schindlmayr, Arno}}, booktitle = {{Theoretical and Computational Nanophotonics: Proceedings of the 2nd International Workshop}}, editor = {{Chigrin, Dmitry N.}}, isbn = {{978-0-7354-0715-2}}, issn = {{1551-7616}}, location = {{Bad Honnef}}, number = {{1}}, pages = {{157--159}}, publisher = {{American Institute of Physics}}, title = {{{Optical conductivity of metals from first principles}}}, doi = {{10.1063/1.3253897}}, volume = {{1176}}, year = {{2009}}, } @article{18636, abstract = {{We derive formulas for the Coulomb matrix within the full-potential linearized augmented-plane-wave (FLAPW) method. The Coulomb matrix is a central ingredient in implementations of many-body perturbation theory, such as the Hartree–Fock and GW approximations for the electronic self-energy or the random-phase approximation for the dielectric function. It is represented in the mixed product basis, which combines numerical muffin-tin functions and interstitial plane waves constructed from products of FLAPW basis functions. The interstitial plane waves are here expanded with the Rayleigh formula. The resulting algorithm is very efficient in terms of both computational cost and accuracy and is superior to an implementation with the Fourier transform of the step function. In order to allow an analytic treatment of the divergence at k=0 in reciprocal space, we expand the Coulomb matrix analytically around this point without resorting to a projection onto plane waves. Without additional approximations, we then apply a basis transformation that diagonalizes the Coulomb matrix and confines the divergence to a single eigenvalue. At the same time, response matrices like the dielectric function separate into head, wings, and body with the same mathematical properties as in a plane-wave basis. As an illustration we apply the formulas to electron-energy-loss spectra (EELS) for nickel at different k vectors including k=0. The convergence of the spectra towards the result at k=0 is clearly seen. Our all-electron treatment also allows to include transitions from 3s and 3p core states in the EELS spectrum that give rise to a shallow peak at high energies and lead to good agreement with experiment.}}, author = {{Friedrich, Christoph and Schindlmayr, Arno and Blügel, Stefan}}, issn = {{0010-4655}}, journal = {{Computer Physics Communications}}, number = {{3}}, pages = {{347--359}}, publisher = {{Elsevier}}, title = {{{Efficient calculation of the Coulomb matrix and its expansion around k=0 within the FLAPW method}}}, doi = {{10.1016/j.cpc.2008.10.009}}, volume = {{180}}, year = {{2009}}, } @inproceedings{4181, abstract = {{We experimentally and theoretically investigate microdisk resonators with embedded quantum dots immersed in a liquid crystal in its nematic phase, showing the tunabililty of the photonic modes via external parameters like temperature or electric field.}}, author = {{Förstner, Jens and Meier, Cedrik and Piegdon, Karoline and Declair, Stefan and Hoischen, Andreas and Urbanski, Mark and Meier, Torsten and Kitzerow, Heinz-Siegfried}}, booktitle = {{Advances in Optical Sciences Congress}}, isbn = {{9781557528735}}, keywords = {{tet_topic_microdisk}}, location = {{Honolulu, Hawaii United States}}, publisher = {{OSA Technical Digest (CD) (Optical Society of America, 2009), paper NTuC2}}, title = {{{Coupling Dynamics of Quantum Dots in a Liquid-Crystal-Tunable Microdisk Resonator}}}, doi = {{10.1364/nlo.2009.ntuc2}}, year = {{2009}}, } @article{1737, author = {{Guo, Hongcang and Meyrath, Todd P. and Zentgraf, Thomas and Liu, Na and Fu, Liwei and Schweizer, Heinz and Giessen, Harald}}, issn = {{1094-4087}}, journal = {{Optics Express}}, number = {{11}}, publisher = {{The Optical Society}}, title = {{{Optical resonances of bowtie slot antennas and their geometry and material dependence}}}, doi = {{10.1364/oe.16.007756}}, volume = {{16}}, year = {{2008}}, } @article{1738, author = {{Valentine, Jason and Zhang, Shuang and Zentgraf, Thomas and Ulin-Avila, Erick and Genov, Dentcho A. and Bartal, Guy and Zhang, Xiang}}, issn = {{0028-0836}}, journal = {{Nature}}, number = {{7211}}, pages = {{376--379}}, publisher = {{Springer Nature}}, title = {{{Three-dimensional optical metamaterial with a negative refractive index}}}, doi = {{10.1038/nature07247}}, volume = {{455}}, year = {{2008}}, } @article{1739, author = {{Meyrath, T. P. and Zentgraf, Thomas and Rockstuhl, C. and Giessen, H.}}, issn = {{0946-2171}}, journal = {{Applied Physics B}}, number = {{1}}, pages = {{107--110}}, publisher = {{Springer Nature}}, title = {{{Electromagnetic induction in metamaterials}}}, doi = {{10.1007/s00340-008-3207-z}}, volume = {{93}}, year = {{2008}}, } @article{1740, author = {{Zentgraf, Thomas and Dorfmüller, J. and Rockstuhl, C. and Etrich, C. and Vogelgesang, R. and Kern, K. and Pertsch, T. and Lederer, F. and Giessen, H.}}, issn = {{0146-9592}}, journal = {{Optics Letters}}, number = {{8}}, publisher = {{The Optical Society}}, title = {{{Amplitude- and phase-resolved optical near fields of split-ring-resonator-based metamaterials}}}, doi = {{10.1364/ol.33.000848}}, volume = {{33}}, year = {{2008}}, } @article{1741, author = {{CHRIST, A. and LÉVÊQUE, G. and MARTIN, O. J. F. and Zentgraf, Thomas and KUHL, J. and BAUER, C. and GIESSEN, H. and TIKHODEEV, S. G.}}, issn = {{0022-2720}}, journal = {{Journal of Microscopy}}, number = {{2}}, pages = {{344--353}}, publisher = {{Wiley-Blackwell}}, title = {{{Near-field–induced tunability of surface plasmon polaritons in composite metallic nanostructures}}}, doi = {{10.1111/j.1365-2818.2008.01911.x}}, volume = {{229}}, year = {{2008}}, } @article{1742, author = {{Rockstuhl, Carsten and Zentgraf, Thomas and Meyrath, Todd P. and Giessen, Harald and Lederer, Falk}}, issn = {{1094-4087}}, journal = {{Optics Express}}, number = {{3}}, publisher = {{The Optical Society}}, title = {{{Resonances in complementary metamaterials and nanoapertures}}}, doi = {{10.1364/oe.16.002080}}, volume = {{16}}, year = {{2008}}, } @article{1743, author = {{Rockstuhl, Carsten and Paul, Thomas and Lederer, Falk and Pertsch, Thomas and Zentgraf, Thomas and Meyrath, Todd P. and Giessen, Harald}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, number = {{3}}, publisher = {{American Physical Society (APS)}}, title = {{{Transition from thin-film to bulk properties of metamaterials}}}, doi = {{10.1103/physrevb.77.035126}}, volume = {{77}}, year = {{2008}}, } @article{4554, abstract = {{We have investigated the properties of neutral and charged excitons in single CdSe/ZnSe QD photodiodes by μ-photoluminescence spectroscopy. By applying a bias voltage, we have been able to control the number of electrons in a single QD by shifting the energy levels of the QD with respect to the Fermi level in the back contact. Also the quantum-confined Stark effect was observed as a function of the applied electric field.}}, author = {{de Vasconcellos, S. Michaelis and Pawlis, A. and Arens, C. and Panfilova, M. and Zrenner, Artur and Schikora, D. and Lischka, K.}}, issn = {{0026-2692}}, journal = {{Microelectronics Journal}}, keywords = {{CdSe quantum dots, Photodiode, Stark effect}}, number = {{2}}, pages = {{215--217}}, publisher = {{Elsevier BV}}, title = {{{Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes}}}, doi = {{10.1016/j.mejo.2008.07.055}}, volume = {{40}}, year = {{2008}}, } @article{4555, abstract = {{Semiconductor microdiscs are promising for applications in photonics and quantum-information processing, such as efficient solid-state-based single-photon emitters. Strain in the multilayer structure of those devices has an important influence on their optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence measurements of microdiscs reveal substantially broadened emission lines with a shift to lower energy at the undercut part of microdiscs, indicating local relaxation in this area. The distribution of the strain in the microdiscs is obtained from an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs is free of defects.}}, author = {{Panfilova, M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}}, issn = {{0026-2692}}, journal = {{Microelectronics Journal}}, keywords = {{Raman, Photoluminescence, Microdisc, ZnSe}}, number = {{2}}, pages = {{221--223}}, publisher = {{Elsevier BV}}, title = {{{Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs}}}, doi = {{10.1016/j.mejo.2008.07.056}}, volume = {{40}}, year = {{2008}}, } @article{4557, abstract = {{The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.}}, author = {{Zrenner, Artur and Ester, P and Michaelis de Vasconcellos, S and Hübner, M C and Lackmann, L and Stufler, S and Bichler, M}}, issn = {{0953-8984}}, journal = {{Journal of Physics: Condensed Matter}}, number = {{45}}, publisher = {{IOP Publishing}}, title = {{{Coherent optoelectronics with single quantum dots}}}, doi = {{10.1088/0953-8984/20/45/454210}}, volume = {{20}}, year = {{2008}}, } @inbook{7500, author = {{Meier, Cedrik and Lüttjohann, Stephan and Offer, Matthias and Wiggers, Hartmut and Lorke, Axel}}, booktitle = {{Advances in Solid State Physics}}, isbn = {{9783540858584}}, issn = {{1438-4329}}, pages = {{79--90}}, publisher = {{Springer Berlin Heidelberg}}, title = {{{Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strength}}}, doi = {{10.1007/978-3-540-85859-1_7}}, year = {{2008}}, } @article{7640, author = {{Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{19}}, publisher = {{AIP Publishing}}, title = {{{Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}}}, doi = {{10.1063/1.2920439}}, volume = {{92}}, year = {{2008}}, } @article{8593, author = {{Diaconescu, D. and Goldschmidt, A. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, pages = {{276--283}}, title = {{{Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples}}}, doi = {{10.1002/pssb.200743345}}, year = {{2008}}, } @article{8603, author = {{Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}}}, doi = {{10.1063/1.2899968}}, year = {{2008}}, } @article{8606, author = {{Grbić, B. and Leturcq, R. and Ihn, T. and Ensslin, K. and Blatter, G. and Reuter, Dirk and Wieck, A. D.}}, issn = {{1098-0121}}, journal = {{Physical Review B}}, title = {{{Hysteretic magnetotransport inp-typeAlxGa1−xAsheterostructures with In/Zn/Au Ohmic contacts}}}, doi = {{10.1103/physrevb.77.245307}}, year = {{2008}}, } @article{8607, author = {{Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}}}, doi = {{10.1063/1.2943279}}, year = {{2008}}, }